JPH03127844A - Bonding equipment and bonding method - Google Patents
Bonding equipment and bonding methodInfo
- Publication number
- JPH03127844A JPH03127844A JP1267760A JP26776089A JPH03127844A JP H03127844 A JPH03127844 A JP H03127844A JP 1267760 A JP1267760 A JP 1267760A JP 26776089 A JP26776089 A JP 26776089A JP H03127844 A JPH03127844 A JP H03127844A
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- tool
- capillary
- bonding tool
- wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 23
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- 238000002788 crimping Methods 0.000 claims description 20
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 26
- 238000010586 diagram Methods 0.000 description 18
- 239000010931 gold Substances 0.000 description 9
- 229910052737 gold Inorganic materials 0.000 description 9
- 230000007423 decrease Effects 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48455—Details of wedge bonds
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
- H01L2224/78302—Shape
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
集積回路等の半導体装置において、半導体のチップとパ
ッケージの外部引き出し用リードとをボンディングワイ
ヤで接続する装置に関し、第２ボンディング部のボンデ
ィング強度を高めるボンディング装置とそのボンディン
グ方法を確立することによって、小型・多ピンの半導体
装置における信頼性を高めることを目的とし、半導体の
チップ上に設けたボンディングパッドとパッケージのリ
ード部とを、ボンディングワイヤで接続するボンディン
グ装置であって、第１ポンデイングを行う第１のボンデ
ィングツールに隣接して第２ボンディングを行う第２の
ボンディングツールを設け、かつ、前記第１のボンディ
ングツールの圧着部の幅よりも、第２のボンディングツ
ールの圧着部の幅を大きくするよう構成する。[Detailed Description of the Invention] [Summary] In a semiconductor device such as an integrated circuit, the present invention relates to a device for connecting a semiconductor chip and an external lead of a package with a bonding wire, and a bonding device that increases the bonding strength of a second bonding part. By establishing this bonding method, we aim to improve the reliability of small, multi-pin semiconductor devices.We aim to improve the reliability of small, multi-pin semiconductor devices by establishing a bonding device that connects the bonding pads provided on the semiconductor chip and the leads of the package using bonding wires. A second bonding tool for performing second bonding is provided adjacent to the first bonding tool for performing first bonding, and The width of the crimp portion of the bonding tool is increased.
本発明は、集積回路等の半導体装置において、半導体の
チップとパッケージの外部引き出し用リードとをボンデ
ィングワイヤで接続する装置に関する。The present invention relates to a device for connecting a semiconductor chip to an external lead of a package using a bonding wire in a semiconductor device such as an integrated circuit.
近年、集積回路の高集積・多機能化と小型化の要求にと
もない、半導体装置の多ピン化（ピンとは引き出しリー
ドの事を示している）と小型化が進んでいる。In recent years, with the demand for higher integration, multifunctionality, and miniaturization of integrated circuits, semiconductor devices have become more pin-counted (pins refer to lead-out leads) and miniaturized.
そのため、チップに設けるボンディングパッドの面積を
小さくすることにより、多ピン化と小型化を両立させて
いる。Therefore, by reducing the area of bonding pads provided on the chip, it is possible to achieve both an increase in the number of pins and a reduction in size.
しかし、ボンディング面積を小さくすることはボンディ
ング強度を低下させる要因となっていて、特にリード部
へのボンディングすなわち第２ボンディングのボンディ
ング強度が低下しており、該第２ボンディングのボンデ
ィング強度を高くする必要が生じている。However, reducing the bonding area is a factor in reducing the bonding strength, especially the bonding strength of the bonding to the lead part, that is, the second bonding, and it is necessary to increase the bonding strength of the second bonding. is occurring.
〔従来の技術］
（１）ワイヤボンディングの概要
半導体装置のワイヤボンディングとしては、超音波熱圧
着法が広く用いられている。[Prior Art] (1) Overview of wire bonding Ultrasonic thermocompression bonding is widely used for wire bonding of semiconductor devices.
超音波熱圧着法は、金属の融点以下の温度でボンディン
グパッドまたはリード部とボンディングワイヤとを加圧
接触させ、同時に、該接触部に超音波の振動を加え、溶
融することなく金属の拡散によって接合させる方法であ
る。The ultrasonic thermocompression bonding method brings the bonding pad or lead part into pressure contact with the bonding wire at a temperature below the melting point of the metal, and at the same time applies ultrasonic vibration to the contact part, causing diffusion of the metal without melting. This is a method of joining.
例えば、グイボンディングしたリードフレームを約２５
０°Ｃ程度に加熱し、チップのボンディングパッドおよ
び該リードフレームのリード部に、ぞれぞれ金線を加圧
し超音波振動を加えるものである。For example, a lead frame that has been bonded to approximately 25
It is heated to about 0° C., and ultrasonic vibrations are applied to the bonding pads of the chip and the lead portions of the lead frame by pressing gold wires, respectively.
また、超音波熱圧着法のなかでも、ボンディングの方向
性がなく作業性の良いポールボンディングが広く用いら
れている。Further, among the ultrasonic thermocompression bonding methods, pole bonding is widely used because it has no directionality and has good workability.
（２）ボンディング装置とボンディングプロセス第５図
は、ワイヤボンディング用ツールを説明する図で、（ａ
）はキャピラリの斜視図、（ｂ）は断面図、（ｃ）は圧
着部側から見たキャピラリの図、である。(2) Bonding equipment and bonding process Figure 5 is a diagram explaining a wire bonding tool.
) is a perspective view of the capillary, (b) is a sectional view, and (c) is a view of the capillary seen from the crimping part side.
キャピラリ５は軸心にボンディングワイヤを通すための
細大を有し、先端は円錐形していてその頂部にはボンデ
ィングワイヤを圧着するための圧着部１３が有る。The capillary 5 is slender enough to pass the bonding wire through its axis, has a conical tip, and has a crimping part 13 at the top for crimping the bonding wire.
また、キャピラリ５には、図に示されないホーンによっ
て超音波振動子の振動が加えられる。Further, vibrations of an ultrasonic transducer are applied to the capillary 5 by a horn (not shown).
次に、前記キャピラリ５を使用したボンディングプロセ
スを説明する。Next, a bonding process using the capillary 5 will be explained.
第６図は、ボンディングプロセスを説明する側面図で、
（ａ） （ｂ） （ｃ） （ｄ） （ｅ）は各プロセス
を順に説明する図、である。尚、同図において、キャピ
ラリのみ断面図で示しである。FIG. 6 is a side view illustrating the bonding process.
(a) (b) (c) (d) (e) are diagrams explaining each process in order. In this figure, only the capillary is shown in cross-section.
同図は、チップ１をダイパッド３にダイボンディングし
たリードフレームにおいて、該チップ１５
のボンディングパッドと該リードフレームのリード部２
との間を、ワイヤボンディングする手順である。また、
リードフレームおよびチップ１は約２５０“Ｃ程度に加
熱している。The figure shows a lead frame in which a chip 1 is die-bonded to a die pad 3, and the bonding pad of the chip 15 and the lead portion 2 of the lead frame.
This is the procedure for wire bonding between the two. Also,
The lead frame and chip 1 are heated to about 250"C.
■金球を作る。（第６図（ａ））
キャピラリ５の先端部に金線４を引き出し、該金線４の
先端部を図に示されないトーチによって溶融し、金球６
を作る。■Make a golden ball. (FIG. 6(a)) A gold wire 4 is pulled out from the tip of the capillary 5, and the tip of the gold wire 4 is melted with a torch (not shown) to form a gold ball 6.
make.
■第１ボンディング（第６図（ｂ））
キャピラリ５を下降させ、チップ１のボンディングパッ
ド上に金球６を圧着する。■First bonding (FIG. 6(b)) The capillary 5 is lowered and the gold ball 6 is crimped onto the bonding pad of the chip 1.
■ステージの移動（第６図（Ｃ））
キャピラリ５を上昇させ、リードフレームを載置・固定
している図に示されないステージを移動し、第２ボンデ
ィングを行うリード部２の位置と該キャピラリ５の位置
を合わせる。■Movement of the stage (Fig. 6 (C)) The capillary 5 is raised, and the stage (not shown in the figure) on which the lead frame is placed and fixed is moved, and the position of the lead part 2 where the second bonding is to be performed and the capillary are moved. Align position 5.
■第２ボンディング（第６図（ｄ））
キャピラリ５を下降させ、金線４をリード部２に圧着す
る。■Second bonding (FIG. 6(d)) The capillary 5 is lowered and the gold wire 4 is crimped onto the lead portion 2.
■金線の切断（第６図（ｅ））
キャピラリ５がリード部２に圧着している状態で金線４
を引き上げ、それによって該金線を圧着部で切断し、キ
ャピラリ５を上昇させる。■Cutting the gold wire (Fig. 6(e)) With the capillary 5 crimped to the lead part 2, the gold wire 4 is
is pulled up, thereby cutting the gold wire at the crimp portion and raising the capillary 5.
以上のプロセスである。The above is the process.
（３）ボンディング完了後の状態 第７図は、ボンディング状態を説明する平面図である。(3) Status after completion of bonding FIG. 7 is a plan view illustrating the bonding state.
すなわち、チップ１のボンディングパッド７とリードフ
レームのリード部２との間を、金線４で接続した状態で
ある。That is, the gold wire 4 is connected between the bonding pad 7 of the chip 1 and the lead portion 2 of the lead frame.
そして、ボンディングパッド７の圧着部が第１ボンディ
ング部８で、リード部２の圧着部が第２ボンディング部
９である。The crimp portion of the bonding pad 7 is the first bonding portion 8 , and the crimp portion of the lead portion 2 is the second bonding portion 9 .
また、第１ボンディング部８は、金球を圧着しているた
め円形の圧着面形状を威しているが、第２ボンディング
部９は、金線４をそのまま圧着しているため扇状の圧着
面形状を威している。In addition, the first bonding part 8 has a circular crimping surface shape because the gold ball is crimped, but the second bonding part 9 has a fan-shaped crimping surface because the gold wire 4 is crimped as is. It dominates the shape.
ちなみに、例えばボンディングパッド７の大きさは、−
辺の長さが１００μｍ程度であり、リード＝７
部２の幅は１３０μｍ程度である。By the way, for example, the size of the bonding pad 7 is -
The length of the side is about 100 μm, and the width of lead=7 portion 2 is about 130 μm.
ところで、半導体のチップ１に形成する集積回路の高密
度化・高集積化・多機能化にともない、半導体装置の引
き出しリードの数は多くなる一方であり、他方には、半
導体装置の小型化要求がある。By the way, as integrated circuits formed on semiconductor chips 1 become more dense, highly integrated, and multi-functional, the number of leads for semiconductor devices increases, and on the other hand, there is a demand for miniaturization of semiconductor devices. There is.
そのため、これらの要求を満足するために、ボンディン
グパッド７の面積を小さくし、１チツプ当たりに多数の
ボンディングパッドを配設できるようにすると同時に、
リードフレームのリード部２の幅も狭くし、多数のリー
ド部を配設できるようにしている。Therefore, in order to satisfy these requirements, the area of the bonding pad 7 can be made small and a large number of bonding pads can be arranged per chip.
The width of the lead portion 2 of the lead frame is also narrowed so that a large number of lead portions can be arranged.
他方、ボンディング面積の縮小にともないキャピラリも
小型化させており、ボンディングパッド７の大きさに合
わせて該キャピラリの圧着部の面積も小さくしている。On the other hand, as the bonding area is reduced, the capillary is also made smaller, and the area of the crimp portion of the capillary is also made smaller in accordance with the size of the bonding pad 7.
しかし、ボンディングパッド７やリード部２のボンディ
ング面積を小さくすることはボンディング強度を低下さ
せる要因となり、特にリード部２へのボンディングすな
わち第２ボンディング部９の強度低下が著しい。However, reducing the bonding area of the bonding pad 7 and the lead portion 2 causes a reduction in bonding strength, and in particular, the strength of bonding to the lead portion 2, that is, the second bonding portion 9, is significantly reduced.
すなわち、第１ボンディング部８では金球を圧着してい
るため圧着面積を大きく確保できるのに対し、第２ボン
ディング部９においては金線４を圧着しているため、圧
着面積が第１ボンディング部８に比較して小さくなるた
めである。That is, in the first bonding part 8, the gold ball is crimped, so a large crimping area can be ensured, whereas in the second bonding part 9, the gold wire 4 is crimped, so the crimping area is larger than that of the first bonding part. This is because it is smaller than 8.
また、ボンディング時のチップ１への熱ストレスを小さ
くし、該チップ１の信頼性を向上することが強く望まれ
ており、そのため、ボンディング温度も低下させている
。しかし、ボンディング温度の低下はボンディング強度
の低下を招来することになる。Furthermore, it is strongly desired to reduce the thermal stress on the chip 1 during bonding and improve the reliability of the chip 1, and therefore the bonding temperature is also lowered. However, a decrease in bonding temperature results in a decrease in bonding strength.
その結果、ボンディング面積の縮小とボンディング温度
の低下とがボンディング強度を低下させることになり、
該ボンディング強度における半導体装置の信頼性が低下
している。As a result, the bonding area decreases and the bonding temperature decreases, reducing the bonding strength.
The reliability of the semiconductor device with respect to the bonding strength is reduced.
本願発明の技術的課題は、ワイヤボンディングにおける
以上のような問題を解消し、第２ボンディング部のボン
ディング強度を高めるボンディング装置とそのボンディ
ング方法を確立することによって、小型・多ピンの半導
体装置における信頼性を高めることにある。The technical problem of the present invention is to solve the above-mentioned problems in wire bonding and to establish a bonding device and a bonding method for increasing the bonding strength of the second bonding part, thereby increasing reliability in small-sized, multi-pin semiconductor devices. The aim is to enhance sexuality.
第１図は、本発明の基本原理を説明する図で、（ａ）は
第１ボンディング実施状態を示す図、（ｂ）は第２ボン
ディング実施状態を示す図、（ｃ）はボンディングツー
ルを（ａ）のＡ−Ａ位置から見た図、である。尚、同図
（ａ） （ｂ）において、ボンディングツールのみ断面
図で示しである。FIG. 1 is a diagram explaining the basic principle of the present invention, (a) is a diagram showing the first bonding implementation state, (b) is a diagram showing the second bonding implementation state, and (c) is a diagram showing the bonding tool ( It is a figure seen from the AA position of a). In addition, in FIGS. 3A and 3B, only the bonding tool is shown in cross-sectional view.
本発明は、小型化された第■ボンディング用ツール１０
の他に、圧着面積の大きい第２ボンディング用のツール
１１を備えているところに特徴がある。The present invention provides a compact No. 1 bonding tool 10.
Another feature is that it includes a second bonding tool 11 with a large crimping area.
すなわち、半導体のチップ１上に設けたボンディングパ
ッドとパッケージのリード部２とを、ボンディングワイ
ヤ４ａで接続するボンディング装置であって、第１ボン
ディングを行う第１のボンディングツール１０に隣接し
て第２ボンディングを行う第２のボンディングツール１
１を設け、かつ、前記第１のボンディングツール１０の
圧着部１３ａの幅旧まりも、第２のボンディングツール
１１の圧着部１２ａの幅Ｗ２を大きくしたボンディング
装置である。That is, it is a bonding device that connects a bonding pad provided on a semiconductor chip 1 and a lead part 2 of a package using a bonding wire 4a, and a second bonding tool 10 is provided adjacent to a first bonding tool 10 that performs the first bonding. Second bonding tool 1 for bonding
1, and the width W2 of the crimp portion 12a of the second bonding tool 11 is increased.
［作用〕
本発明のボンディング装置は、第１ボンディングを第１
のボンディングツール１０で行い、第２ボンディングを
第２のボンディングツール１１で行うことにより、第２
ボンディング時におけるボンディングワイヤ４ａの超音
波熱圧着により圧着面積を大きくしたものである。[Function] The bonding device of the present invention performs the first bonding in the first bonding process.
By performing the second bonding with the bonding tool 10 and performing the second bonding with the second bonding tool 11, the second bonding is performed with the second bonding tool 11.
The bonding area is increased by ultrasonic thermocompression bonding of the bonding wire 4a during bonding.
すなわち、第２のボンディングツール１■の圧着部１２
ａの幅Ｗ２は、第１のボンディングツール１０の圧着部
１３ａの幅ｈ１よりも広い。したがって、ボンディング
ワイヤ４ａをリード部２に圧着する面積は、第１のボン
ディングツール１０で行うよりも広くなり、このため、
超音波がかかりやすくなってボンディング強度を高くす
ることができる。That is, the crimping part 12 of the second bonding tool 1
The width W2 of a is wider than the width h1 of the crimp portion 13a of the first bonding tool 10. Therefore, the area for crimping the bonding wire 4a to the lead part 2 is larger than that for the first bonding tool 10, and therefore,
It becomes easier to apply ultrasonic waves and the bonding strength can be increased.
第２図は、作用を説明する図で、（ａ）は第２ボンディ
ング実施時の側面図、（ｂ）は（ａ）のＡ−Ａ断面図、
（ｃ）は第２ボンディング部の平面図、である。FIG. 2 is a diagram illustrating the effect, in which (a) is a side view when performing the second bonding, (b) is a sectional view taken along line A-A in (a),
(c) is a plan view of the second bonding part.
同図（ａ）に示すように、チップ１のボンディングパッ
ドに金球を圧着した第１ボンディング部８ａに対し、他
方、第２ボンディングは、第２のボンディングツール１
１がボンディングワイヤ４ａをリード部２に圧着する。As shown in FIG. 1A, the first bonding part 8a is made by pressing a gold ball onto the bonding pad of the chip 1, while the second bonding part 8a is made by the second bonding tool 1.
1 press-bonds the bonding wire 4a to the lead part 2.
尚この時、第１のボンディングツール１０もボンディン
グワイヤ４ａをリード部２に圧着させている。At this time, the first bonding tool 10 also presses the bonding wire 4a onto the lead portion 2.
したがって、同図（ｂ）に示すように第２のボンディン
グツール１１が、第１のボンディングツール１０よりも
大きい圧着面積で、ボンディングワイヤ４ａをリード部
２に圧着することができる。Therefore, as shown in FIG. 2B, the second bonding tool 11 can crimp the bonding wire 4a to the lead portion 2 with a larger crimp area than the first bonding tool 10.
その結果、同図（ｃ）に示すように第２のボンディング
ツールによるボンディング部９ｂの超音波のかかる面積
は、第１のボンディングツールによるボンディング部９
ａの面積よりも大きくなり、これにより、ボンディング
ワイヤーの圧着面積が大きくなって、該ボンディング部
のボンディング強度を高めることができる。As a result, as shown in FIG. 3(c), the area to which the ultrasonic waves are applied on the bonding part 9b by the second bonding tool is the same as that of the bonding part 9b by the first bonding tool.
The area of the bonding wire is larger than the area of a, thereby increasing the crimping area of the bonding wire and increasing the bonding strength of the bonding portion.
（１）ボンディング装置
第３図は、ボンディング装置を説明する図で、（ａ）は
ボンディング装置の断面図、（ｂ）は（ａ）を圧着部側
から見た図、（ｃ）はボンディング装置の駆動部を示す
図、である。(1) Bonding device Figure 3 is a diagram explaining the bonding device, (a) is a cross-sectional view of the bonding device, (b) is a view of (a) seen from the crimping part side, and (c) is the bonding device. FIG.
本実施例のボンディング装置は、同図（ａ） （ｂ）に
示すように、第１のキャピラリ１０ａの側周部に円筒状
の第２のキャピラリｌｌａを設けたものである。As shown in FIGS. 3A and 3B, the bonding apparatus of this embodiment has a cylindrical second capillary lla provided around the side circumference of the first capillary 10a.
また、第１のキャピラリ１０ａの圧着部１３の面積より
も第２のキャピラリｌｌａの圧着部１２の面積を大きく
しである。Further, the area of the crimp portion 12 of the second capillary lla is made larger than the area of the crimp portion 13 of the first capillary 10a.
すなわち、第２のキャピラリｌｌａを円筒状にすること
によって、第１ボンディング部の位置に対していかなる
方向の第２ボンディング部へも対応することが可能とな
る。例えば、Ｄ Ｉ Ｐ （ｄｕａｌ １ｎｌｉｎｅ
ｐａｃｋａｇｅ）やＱ Ｆ Ｐ （ｑｕａｄ ｆｌａｔ
ｐａｃｋａｇｅ）等のパッケージに対応可能である。That is, by making the second capillary lla cylindrical, it becomes possible to support the second bonding part in any direction with respect to the position of the first bonding part. For example, D I P (dual 1nline
package) and Q F P (quad flat
package), etc.
他方、前記第１および第２のキャピラリ１０ａ、ｌｌａ
の駆動は、同図（ｃ）に示すように行う。On the other hand, the first and second capillaries 10a, lla
The driving is performed as shown in FIG. 3(c).
すなわち、第１のキャピラリ１０ａはホーン１４に、第
２のキャピラリｌｌａはホーン１５に取り付け・固定し
、該ホーン１４．１５を図に示されない超音波駆動部に
よって超音波駆動することによって、該キャピラリ１０
ａ、 ｌｌａの圧着部に超音波振動を伝達する。That is, the first capillary 10a is attached and fixed to the horn 14, and the second capillary lla is attached and fixed to the horn 15, and the capillary is 10
Transmit ultrasonic vibrations to the crimped parts of a and lla.
また、ホーン１４をプランジャ１６で、ホーン■５をプ
ランジャ１７で図上下方方向に駆動することによって、
金線４の圧着を行う仕組みである。Also, by driving the horn 14 with the plunger 16 and the horn 5 with the plunger 17 in the vertical direction in the figure,
This is a mechanism for crimping the gold wire 4.
（２）ボンディングプロセス
第４図は、実施例のボンディングプロセスを説明する側
面図で、（ａ） （ｂ） （ｃ） （ｄ） （ｅ）は各
プロセスを順に説明する図、である。尚、同図において
、キャピラリのみ断面図で示しである。(2) Bonding process FIG. 4 is a side view illustrating the bonding process of the embodiment, and (a), (b), (c), (d), and (e) are diagrams illustrating each process in order. In this figure, only the capillary is shown in cross-section.
同図は、チップ１をダイパッド３にダイボンディングし
たリードフレームにおいて、該チップ１のボンディング
パッドと該リードフレームのり−ド部２との間を、ワイ
ヤボンディングする手順である。また、リードフレーム
およびチップＩは約２００″Ｃ程度に加熱している。This figure shows a procedure for wire bonding between the bonding pad of the chip 1 and the lead frame bonding section 2 in a lead frame in which a chip 1 is die-bonded to a die pad 3. Further, the lead frame and chip I are heated to about 200''C.
■金球を作る。（第４図（ａ））
第１のキャピラリ１０ａの先端部に金線４を引き出し、
該金線４の先端部を図に示されないトーチによって溶融
し、金球６を作る。■Make a golden ball. (FIG. 4(a)) Pull out the gold wire 4 to the tip of the first capillary 10a,
The tip of the gold wire 4 is melted by a torch (not shown) to form a gold ball 6.
■第１ボンディング（第４図（ｂ））
第１のキャピラリ１０ａを下降させ、チップ１のボンデ
ィングパッド上に金球６を圧着する。(1) First bonding (FIG. 4(b)) The first capillary 10a is lowered and the gold ball 6 is crimped onto the bonding pad of the chip 1.
■ステージの移動（第４図（Ｃ））
第１のキャピラリ１０ａを上昇させ、リードフレームを
載置・固定している図に示されないステージを移動し、
第２ボンディングを行うリード部２の位置と該第１のキ
ャピラリ１０ａの位置を合わせる。■Moving the stage (Fig. 4 (C)) The first capillary 10a is raised, and the stage (not shown in the figure) on which the lead frame is placed and fixed is moved.
The position of the lead portion 2 to be subjected to second bonding is aligned with the position of the first capillary 10a.
■第２ボンディング（第４図（ｄ））
第１のキャピラリ１０ａおよび第２のキャピラリ１１ａ
を下降させ、金線４をリード部２に圧着する。■Second bonding (Fig. 4(d)) First capillary 10a and second capillary 11a
is lowered, and the gold wire 4 is crimped onto the lead portion 2.
■金線の切断（第４図（ｅ））
第１のキャピラリ１０ａおよび第２のキャピラリ１１ａ
がリード部２に圧着している状態で金線４を引き上げ、
それによって該金線を圧着部で切断し、該キャピラリ１
０ａ、 ｌｌａを上昇させる。■Cutting the gold wire (Fig. 4(e)) First capillary 10a and second capillary 11a
Pull up the gold wire 4 while it is crimped to the lead part 2,
Thereby, the gold wire is cut at the crimp part, and the capillary 1
Increase 0a, lla.
以上のプロセスである。The above is the process.
以上のように本発明のボンディング装置によれば、第１
ボンディング用ツールと圧着面積の大きい第２ポンデイ
ング用のツールとを備えることによって、第２ボンディ
ングの圧着面積を大きくすることができる。As described above, according to the bonding apparatus of the present invention, the first
By providing the bonding tool and the second bonding tool having a large crimping area, the crimping area of the second bonding can be increased.
したがって、ボンディング温度を低温度化し、また、第
１ポンデイングの圧着面積を小さくし、それにともなっ
て第１ポンデイング用ツールの圧着部面積を小さくして
も、第２ボンディングのボンディング強度を堅固に保つ
ことができる。Therefore, even if the bonding temperature is lowered, the crimping area of the first bonding is made smaller, and the area of the crimping part of the first bonding tool is accordingly reduced, the bonding strength of the second bonding can be maintained firmly. Can be done.
その結果、小型・多ピンの半導体装置における信頼性を
高めることができる。As a result, the reliability of a small-sized, multi-pin semiconductor device can be improved.
第１図は、本発明の基本原理を説明する図で、（ａ）は
第１ポンデイング実施状態を示す図、（ｂ）は第２ボン
ディング実施状態を示す図、（ｃ）はボンディングツー
ルを（ａ）のｌ−Ａ位置から見た図、第２図は、作用を
説明する図で、（ａ）は第２ボンディング実施時の側面
図、（ｂ）は（ａ）のＡ、 −Ａ断面図、（ｃ）は第２
ボンディング部の平面図、第３図は、ボンディング装置
を説明する図で、（ａ）はボンディング装置の断面図、
（ｂ）は（ａ）を圧着部側から見た図、（ｃ）はボンデ
ィング装置の駆動部を示す図、
第４図は、実施例のボンディングプロセスを説明する側
面図で、（ａ） （ｂ） （ｃ） （ｄ） （ｅ）は各
プロセスを順に説明する図、
第５図は、ワイヤボンディング用ツールを説明する図で
、（ａ）はキャピラリの斜視図、（ｂ）は断面図、（ｃ
）は圧着部側から見たキャピラリの図、第６図は、ボン
ディングプロセスを説明する側７
面図で、（ａ） （ｂ） （ｃ） （ｄ） （ｅ）は各
プロセスを順に説明する図、
第７図は、ボンディング状態を説明する平面図、である
。
図において、１はチップ、２はリード部、３はダイパッ
ド、４は金線、４ａはボンディングワイヤ、５はキャピ
ラリ、６は金球、７はボンディングバンド、８，８ａは
第１ボンディング部、９は第２ボンディング部、９ａは
第１のボンディングツールによるボンディング部、９ｂ
は第２のボンディングツールによるボンディング部、１
０は第１のボンディングツール、１０ａは第１のキャピ
ラリ、１１は第２のボンディングツール、ｌｌａは第２
のキャピラリ、１２は第２のキャピラリの圧着部、１２
ａは第２のボンディングツールの圧着部、１３は第１の
キャピラリの圧着部、１３ａは第１のボンディングツー
ルの圧着部、１４．１５はホーン、１６．１７はプラン
ジャ、をそれぞれ示している。
（ｄ）
（ｂ’）
（Ｃ）
（ｄ”）
（ｅ’）
興あ賢イ列○ボ′ンブ身ンブブロセ；
４汚４区
（
ワイマポ′ンデスング円゛ソー）し
念爲５閃
（，１）
（Ｃ）
（ｂ）
（ｄ＞FIG. 1 is a diagram explaining the basic principle of the present invention, (a) is a diagram showing the first bonding implementation state, (b) is a diagram showing the second bonding implementation state, and (c) is a diagram showing the bonding tool ( Figure 2 is a diagram for explaining the action, as seen from the l-A position in a), where (a) is a side view when performing the second bonding, and (b) is the A-A cross section in (a). Figure, (c) is the second
FIG. 3 is a plan view of the bonding part, and FIG. 3 is a diagram for explaining the bonding device, and (a) is a cross-sectional view of the bonding device;
(b) is a view of (a) seen from the crimping part side, (c) is a view showing the drive unit of the bonding device, and FIG. 4 is a side view explaining the bonding process of the example. b) (c) (d) (e) is a diagram explaining each process in order, Figure 5 is a diagram explaining a wire bonding tool, (a) is a perspective view of the capillary, (b) is a cross-sectional view , (c
) is a diagram of the capillary seen from the crimping part side, Figure 6 is a side view showing the bonding process, and (a), (b), (c), (d), and (e) explain each process in order. FIG. 7 is a plan view illustrating the bonding state. In the figure, 1 is a chip, 2 is a lead part, 3 is a die pad, 4 is a gold wire, 4a is a bonding wire, 5 is a capillary, 6 is a gold ball, 7 is a bonding band, 8 and 8a are first bonding parts, 9 9a is the second bonding part, 9b is the bonding part by the first bonding tool, and 9b is the second bonding part.
is the bonding part by the second bonding tool, 1
0 is the first bonding tool, 10a is the first capillary, 11 is the second bonding tool, lla is the second
capillary, 12 is a crimp part of the second capillary, 12
13, 13a, 14.15, a horn, and 16.17, a plunger, respectively. (d) (b') (C) (d”) (e') Koa Kenii row ○ Bonbumin buburose; ) (C) (b) (d>
Claims (1)
ドとパッケージのリード部（２）とを、ボンディングワ
イヤ（４ａ）で接続するボンディング装置であって、 第１ボンディングを行う第１のボンディングツール（１
０）に隣接して第２ボンディングを行う第２のボンディ
ングツール（１１）を設け、かつ、前記第１のボンディ
ングツール（１０）の圧着部（１３ａ）の幅（Ｗ１）よ
りも、第２のボンディングツール（１１）の圧着部（１
２ａ）の幅（Ｗ２）を大きくしたこと、を特徴とするボ
ンディング装置。 ２、特許請求の範囲第１項記載のボンディング装置にお
いて、 先ず、第１のボンディングツール（１０）でチップ（１
）上のボンディングパッドにボンディングワイヤ（４ａ
）を圧着し、 次に、すくなくとも第２のボンディングツール（１１）
でリード部（２）にボンディングワイヤ（４ａ）を圧着
すること、 を特徴とするボンディング方法。[Claims] 1. A bonding device that connects a bonding pad provided on a semiconductor chip (1) and a lead portion (2) of a package with a bonding wire (4a), which performs first bonding. First bonding tool (1
A second bonding tool (11) for performing second bonding is provided adjacent to the second bonding tool (11), and the second bonding tool (11) is provided adjacent to The crimp part (1) of the bonding tool (11)
A bonding device characterized in that the width (W2) of 2a) is increased. 2. In the bonding apparatus according to claim 1, first, the chip (1) is bonded with the first bonding tool (10).
) to the bonding pad on the bonding wire (4a
) and then using at least a second bonding tool (11)
A bonding method characterized by: crimping a bonding wire (4a) to a lead part (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1267760A JPH03127844A (en) | 1989-10-13 | 1989-10-13 | Bonding equipment and bonding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1267760A JPH03127844A (en) | 1989-10-13 | 1989-10-13 | Bonding equipment and bonding method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03127844A true JPH03127844A (en) | 1991-05-30 |
Family
ID=17449209
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1267760A Pending JPH03127844A (en) | 1989-10-13 | 1989-10-13 | Bonding equipment and bonding method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03127844A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7017794B2 (en) * | 2003-01-14 | 2006-03-28 | Seiko Epson Corporation | Wire bonding method and wire bonding apparatus |
| JP2009141193A (en) * | 2007-12-07 | 2009-06-25 | Rohm Co Ltd | Wire bonding method and capillary |
-
1989
- 1989-10-13 JP JP1267760A patent/JPH03127844A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7017794B2 (en) * | 2003-01-14 | 2006-03-28 | Seiko Epson Corporation | Wire bonding method and wire bonding apparatus |
| JP2009141193A (en) * | 2007-12-07 | 2009-06-25 | Rohm Co Ltd | Wire bonding method and capillary |
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