JP5018420B2 - Wire bonding method and wire bonding structure - Google Patents

Wire bonding method and wire bonding structure Download PDF

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Publication number
JP5018420B2
JP5018420B2 JP2007299228A JP2007299228A JP5018420B2 JP 5018420 B2 JP5018420 B2 JP 5018420B2 JP 2007299228 A JP2007299228 A JP 2007299228A JP 2007299228 A JP2007299228 A JP 2007299228A JP 5018420 B2 JP5018420 B2 JP 5018420B2
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Prior art keywords
wire
bonding
electrode
electrodes
primary
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JP2007299228A
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JP2009124075A (en
Inventor
浩 春日井
真嗣 今田
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Denso Corp
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Denso Corp
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  • Wire Bonding (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To form a proper wire shape in lamination of a plurality of wires between one set of electrodes when a plurality of wires are connected between an electrode on a semiconductor chip and an electrode on a substrate. <P>SOLUTION: A plurality of wires 30 are laminated and formed on both electrodes 11, 21 by carrying out wire connection process a plurality of times between the electrode 11 of a semiconductor chip 10 and the electrode 21 of a substrate 20. In connection process for forming a wire 30 positioned below a wire 30 positioned in an uppermost part among a plurality of laminated wires 30, the wire 30 after primary bonding is extracted so that a part from a root portion at a primary bonding part 30a to an intermediate part in the wire 30 extends obliquely upward from a horizontal surface H toward a land 21 at a secondary bonding side. <P>COPYRIGHT: (C)2009,JPO&amp;INPIT

Description

本発明は、第１の部材上の電極と第２の部材上の電極との間をワイヤボンディング接続してなるワイヤボンディング方法、および、第１の部材上の電極と第２の部材上の電極との間をワイヤボンディング接続してなるワイヤボンディング構造体に関し、特に、１組の電極間にて複数本のボンディングワイヤを重ねて接続する方法および構造体に関する。   The present invention relates to a wire bonding method in which an electrode on a first member and an electrode on a second member are connected by wire bonding, and an electrode on the first member and an electrode on the second member In particular, the present invention relates to a method and a structure in which a plurality of bonding wires are overlapped and connected between a pair of electrodes.

一般に、この種のワイヤボンディング方法は、先端部からワイヤが引き出されるようになっているワイヤボンディング用のツールによって、半導体チップ上の電極および基板上の電極の一方の電極に１次ボンディングを行い、次に、他方の電極までワイヤを引き出して当該他方の電極に２次ボンディングするという接続工程を行うことで、両電極間をワイヤにより結線するものである（たとえば、特許文献１参照）。   In general, this type of wire bonding method performs primary bonding to one of an electrode on a semiconductor chip and an electrode on a substrate by using a wire bonding tool in which a wire is drawn from the tip. Next, a connection step of drawing the wire to the other electrode and performing secondary bonding to the other electrode is performed to connect the electrodes with the wire (see, for example, Patent Document 1).

ここで、電流容量の点から複数のワイヤが必要である場合、チップの電極と基板の電極の数を増やす必要があるが、そのためには、チップや基板のサイズを大きくする必要がある。その点、上記特許文献１では、チップの電極上にてワイヤを重ねて接続することで、チップサイズの増加を防止していた。
特開２００５−２６８４９７号公報 Here, when a plurality of wires are necessary from the viewpoint of current capacity, it is necessary to increase the number of electrodes of the chip and the electrode of the substrate. For this purpose, it is necessary to increase the size of the chip and the substrate. In that respect, in Patent Document 1, an increase in the chip size is prevented by overlapping and connecting wires on the electrode of the chip.
JP 2005-268497 A

しかしながら、上記従来技術では、基板の電極は依然として複数設ける必要があり、基板サイズの増加は避けられなかった。本発明者は、上記従来技術に基づいて、試作検討を行った。図８は、本発明者の試作としてのワイヤボンディング構造体を示す概略断面図であり、図９は、本発明者の試作としてのワイヤボンディング方法を示す図である。   However, in the above prior art, it is still necessary to provide a plurality of electrodes on the substrate, and an increase in the substrate size is inevitable. The present inventor conducted a trial production based on the above-described conventional technology. FIG. 8 is a schematic cross-sectional view showing a wire bonding structure as a prototype of the present inventor, and FIG. 9 is a diagram showing a wire bonding method as a prototype of the present inventor.

図８に示されるように、複数本のワイヤ３０が、基板２０上の電極２１にて複数箇所で１次ボンディングされ、半導体チップ１０上の電極１１に重ねられて２次ボンディングされることにより、半導体チップ１０と基板２０とが複数本のワイヤ３０により結線されている。   As shown in FIG. 8, a plurality of wires 30 are primary bonded at a plurality of locations on the electrode 21 on the substrate 20, and overlapped on the electrode 11 on the semiconductor chip 10 to be secondary bonded. The semiconductor chip 10 and the substrate 20 are connected by a plurality of wires 30.

この場合、上述のように、基板２０の電極２１は複数設けられているので、基板サイズの増加は避けられない。そこで、基板２０の電極２１も１個として、当該１個の基板２０の電極２１に対して複数本のワイヤを重ねて１次ボンディングすることを検討した。   In this case, as described above, since a plurality of electrodes 21 of the substrate 20 are provided, an increase in the substrate size is inevitable. In view of this, the number of electrodes 21 on the substrate 20 is also one, and it has been studied to perform primary bonding by superimposing a plurality of wires on the electrode 21 of the single substrate 20.

しかしながら、この場合、図９に示されるように、ワイヤ３０には、当該ワイヤ３０における１次ボンディング部３０ａ側の根元部から垂直上方に延びて形成されるネック部Ｎが存在する。そのため、ツール１００により、その上からワイヤ３０を重ねて１次ボンディングしようとすると、下側のワイヤ３０のネック部Ｎが潰れて当該下側のワイヤ３０が変形してしまい、ワイヤ３０を重ねて形成することはできない。   In this case, however, as shown in FIG. 9, the wire 30 has a neck portion N formed to extend vertically upward from the root portion of the wire 30 on the primary bonding portion 30 a side. For this reason, when the tool 100 is used to superimpose the wire 30 from above, and the primary bonding is attempted, the neck portion N of the lower wire 30 is crushed and the lower wire 30 is deformed. It cannot be formed.

なお、上記した問題は、半導体チップの電極と基板の電極との間で複数本のワイヤを接続するワイヤボンディング方法およびワイヤボンディング構造体に限らず、第１の部材上の電極と第２の部材上の電極との間をワイヤボンディング接続してなるワイヤボンディング方法およびワイヤボンディング構造体においては、共通して発生する問題であると考えられる。   The above-described problem is not limited to the wire bonding method and the wire bonding structure in which a plurality of wires are connected between the electrode of the semiconductor chip and the electrode of the substrate, but the electrode on the first member and the second member In the wire bonding method and the wire bonding structure in which the upper electrode is connected by wire bonding, it is considered that the problem occurs in common.

本発明は、上記問題に鑑みてなされたものであり、第１の部材上の電極と第２の部材上の電極との間で複数本のワイヤを接続する場合に、１組の電極間にて複数本のワイヤを重ねるにあたって適切なワイヤ形状を形成できるようにすることを目的とする。   This invention is made | formed in view of the said problem, and when connecting a several wire between the electrode on a 1st member, and the electrode on a 2nd member, between one set of electrodes It is an object of the present invention to form an appropriate wire shape when stacking a plurality of wires.

上記目的を達成するため、請求項１に記載の発明では、両電極１１、２１間で接続工程を複数回行って両電極（１１、２１）上にワイヤ（３０）を複数本重ねて形成するものであって、重ねられた複数本のワイヤ（３０）のうち最上部に位置するワイヤ（３０）よりも下側に位置するワイヤ（３０）を形成する接続工程では、１次ボンディング後のワイヤ（３０）の引き出しを、当該ワイヤ（３０）における１次ボンディング部（３０ａ）側の根元部から中間部までが２次ボンディング側の電極（２１）に向かって水平面から斜め上方の方向に延びる形状となるように行うものであり、
ワイヤ（３０）の１次ボンディング部（３０ａ）の一部が、その下側に位置するワイヤ（３０）の１次ボンディング部（３０ａ）から２次ボンディング側の電極（２１）とは反対側の方向へはみ出るように位置をずらしながら、ワイヤ（３０）を重ねていくことを特徴としている。 In order to achieve the above object, in the invention described in claim 1, a plurality of wires (30) are formed on both electrodes (11, 21) by performing a connecting step between the electrodes 11, 21 multiple times. In the connecting step of forming the wire (30) positioned below the uppermost wire (30) among the plurality of stacked wires (30), the wire after primary bonding A shape in which the lead of (30) extends from the base portion on the primary bonding portion (30a) side to the intermediate portion of the wire (30) in an obliquely upward direction from the horizontal plane toward the electrode (21) on the secondary bonding side. is intended to perform in such a way that,
A part of the primary bonding portion (30a) of the wire (30) is located on the opposite side of the secondary bonding side electrode (21) from the primary bonding portion (30a) of the wire (30) positioned below the wire (30). The wire (30) is overlapped while shifting the position so as to protrude in the direction .

それによれば、従来問題となっていた１次ボンディング部側の根元部から垂直上方に延びて形成されるワイヤのネック部を無くして、ワイヤを重ねるときの当該ネック部潰れによるワイヤ変形を防止できるため、１組の電極（１１、２１）間にて複数本のワイヤ（３０）を重ねるにあたって適切なワイヤ形状を形成することが可能となる。   According to this, the wire neck portion formed by extending vertically upward from the root portion on the primary bonding portion side, which has been a problem in the past, can be eliminated, and wire deformation due to the neck portion collapse when the wires are stacked can be prevented. Therefore, an appropriate wire shape can be formed when a plurality of wires (30) are stacked between a pair of electrodes (11, 21).

請求項２に記載の発明では、両電極１１、２１間で接続工程を複数回行って両電極（１１、２１）上にワイヤ（３０）を複数本重ねて形成するものであって、重ねられた複数本のワイヤ（３０）のうち最上部に位置するワイヤ（３０）よりも下側に位置するワイヤ（３０）を形成する接続工程では、１次ボンディング後のワイヤ（３０）の引き出しを、形成後の当該ワイヤ（３０）における頂部（３０ｃ）が１次ボンディングされた電極（１１）の垂直上方ではなく両電極（１１、２１）の間に位置するように、２次ボンディング側の電極（２１）に向かって水平面から斜め上方の方向に向かって行うものであり、
ワイヤ（３０）の１次ボンディング部（３０ａ）の一部が、その下側に位置するワイヤ（３０）の１次ボンディング部（３０ａ）から２次ボンディング側の電極（２１）とは反対側の方向へはみ出るように位置をずらしながら、ワイヤ（３０）を重ねていくこと特徴としている。 In the second aspect of the invention, the connection process is performed a plurality of times between the electrodes 11 and 21 to form a plurality of wires (30) on the electrodes (11 and 21). In the connecting step of forming the wire (30) positioned below the uppermost wire (30) among the plurality of wires (30), the wire (30) after the primary bonding is pulled out. The secondary bonding-side electrode (30) is positioned between the electrodes (11, 21) and not vertically above the primary-bonded electrode (11). 21) toward the diagonally upward direction from the horizontal plane ,
A part of the primary bonding portion (30a) of the wire (30) is located on the opposite side of the secondary bonding side electrode (21) from the primary bonding portion (30a) of the wire (30) positioned below the wire (30). The wire (30) is overlapped while shifting the position so as to protrude in the direction .

この場合も、従来問題となっていた１次ボンディング部側の根元部から垂直上方に延びて形成されるワイヤのネック部を無くして、ワイヤを重ねるときの当該ネック部潰れによるワイヤ変形を防止できるため、１組の電極（１１、２１）間にて複数本のワイヤ（３０）を重ねるにあたって適切なワイヤ形状を形成することが可能となる。   Also in this case, the wire neck formed by extending vertically upward from the base portion on the primary bonding portion side, which has been a problem in the prior art, can be eliminated, and wire deformation due to the collapse of the neck portion when the wires are stacked can be prevented. Therefore, an appropriate wire shape can be formed when a plurality of wires (30) are stacked between a pair of electrodes (11, 21).

ここで、請求項３に記載の発明のように、上記の斜め上方の方向とは、当該方向と水平面とのなす角度（θ）が１０〜４５°となっているものであることが好ましい。   Here, as in the invention described in claim 3, the above obliquely upward direction is preferably such that an angle (θ) between the direction and the horizontal plane is 10 to 45 °.

また、請求項１、請求項２に記載の発明のように、ワイヤ（３０）の１次ボンディング部（３０ａ）の一部が、その下側に位置するワイヤ（３０）の１次ボンディング部（３０ａ）から２次ボンディング側の電極（２１）とは反対側の方向へはみ出るように位置をずらしながら、ワイヤ（３０）を重ねていくようにすれば、下側のワイヤ（３０）の１次ボンディング部（３０ａ）寄りの部分の変形をより小さくできる。 In addition, as in the first and second aspects of the present invention, a part of the primary bonding portion (30a) of the wire (30) is a primary bonding portion ( while shifting the position so as to extend to the outside of the opposite direction to the secondary bonding side of the electrode (21) from 30a), if as to superimpose the wire (30), the first-order lower side of the wire (30) The deformation of the portion near the bonding portion (30a) can be further reduced.

また、請求項４に記載の発明では、第１の部材（１０）上の電極（１１）および第２の部材（２０）上の電極（２１）のうち一方の電極に１次ボンディングを行い、他方の電極に２次ボンディングすることにより、両電極（１１、２１）間をワイヤ（３０）により結線してなるワイヤボンディング構造体において、両電極（１１、２１）間にて両電極（１１、２１）上にワイヤ（３０）を複数本重ねて形成し、重ねられた複数本のワイヤ（３０）のうち最上部に位置するワイヤ（３０）よりも下側に位置するワイヤ（３０）を、当該ワイヤ（３０）における１次ボンディング部（３０ａ）側の根元部から中間部までが２次ボンディング側の電極（２１）に向かって水平面から斜め上方の方向に延びる形状となるように引き出されており、
ワイヤ（３０）の１次ボンディング部（３０ａ）の一部が、その下側に位置するワイヤ（３０）の１次ボンディング部（３０ａ）から２次ボンディング側の電極（２１）とは反対側の方向へはみ出るように位置をずらしながら、ワイヤ（３０）が重ねられていることを特徴とする。 In the invention according to claim 4 , primary bonding is performed on one of the electrode (11) on the first member (10) and the electrode (21) on the second member (20), In a wire bonding structure in which the electrodes (11, 21) are connected by wires (30) by secondary bonding to the other electrode, both electrodes (11, 21) are connected between the electrodes (11, 21). 21) A plurality of wires (30) are formed on top of each other, and a wire (30) positioned below the uppermost wire (30) among the plurality of stacked wires (30), primary bonding portion of the wire (30) (30a) side of the drawn out from the base portion so as to the intermediate portion is made of a horizontal plane toward the secondary bonding side of the electrode (21) and shaped to extend obliquely upward direction And
A part of the primary bonding portion (30a) of the wire (30) is located on the opposite side of the secondary bonding side electrode (21) from the primary bonding portion (30a) of the wire (30) positioned below the wire (30). The wire (30) is overlapped while shifting the position so as to protrude in the direction .

また、請求項５に記載の発明では、両電極（１１、２１）間にて両電極（１１、２１）上にワイヤ（３０）を複数本重ねて形成し、重ねられた複数本のワイヤ（３０）のうち最上部に位置するワイヤ（３０）よりも下側に位置するワイヤ（３０）を、当該ワイヤ（３０）における頂部（３０ｃ）が１次ボンディングされた電極（１１）の垂直上方ではなく前記両電極（１１、２１）の間に位置するように、２次ボンディング側の電極（２１）に向かって水平面から斜め上方の方向に向かって引き出されており、
ワイヤ（３０）の１次ボンディング部（３０ａ）の一部が、その下側に位置するワイヤ（３０）の１次ボンディング部（３０ａ）から２次ボンディング側の電極（２１）とは反対側の方向へはみ出るように位置をずらしながら、ワイヤ（３０）が重ねられていることを特徴とする。 In the invention according to claim 5 , a plurality of wires (30) are formed on both electrodes (11, 21) between the electrodes (11, 21), and the plurality of wires ( 30), the wire (30) positioned below the uppermost wire (30) is vertically above the electrode (11) to which the top (30c) of the wire (30) is primarily bonded. Without being drawn between the two electrodes (11, 21) and toward the electrode (21) on the secondary bonding side from the horizontal plane in an obliquely upward direction ,
A part of the primary bonding portion (30a) of the wire (30) is located on the opposite side of the secondary bonding side electrode (21) from the primary bonding portion (30a) of the wire (30) positioned below the wire (30). The wire (30) is overlapped while shifting the position so as to protrude in the direction .

これら請求項４、請求項５の構造体は、それぞれ上記請求項１、上記請求項２に記載のワイヤボンディング方法によって適切に製造されるものであり、これらの構造体によっても、１組の電極（１１、２１）間にて複数本のワイヤ（３０）を重ねるにあたって適切なワイヤ形状を形成することが可能となる。 The structures according to claims 4 and 5 are appropriately manufactured by the wire bonding method according to claim 1 and claim 2, respectively, and a set of electrodes is also formed by these structures. An appropriate wire shape can be formed when a plurality of wires (30) are stacked between (11, 21).

なお、特許請求の範囲およびこの欄で記載した各手段の括弧内の符号は、後述する実施形態に記載の具体的手段との対応関係を示す一例である。
In addition, the code | symbol in the bracket | parenthesis of each means described in the claim and this column is an example which shows a corresponding relationship with the specific means as described in embodiment mentioned later.

以下、本発明の実施形態について図に基づいて説明する。なお、以下の各実施形態相互において、互いに同一もしくは均等である部分には、説明の簡略化を図るべく、図中、同一符号を付してある。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, parts that are the same or equivalent to each other are given the same reference numerals in the drawings in order to simplify the description.

（第１実施形態）
図１は、本発明の第１実施形態に係るワイヤボンディング構造体の概略断面構成を示す図である。この構造体は、大きくは、第１の部材としての半導体チップ１０と第２の部材としての基板２０とが、ワイヤボンディングにより形成されたワイヤ３０により電気的に接続されたものである。 (First embodiment)
FIG. 1 is a diagram showing a schematic cross-sectional configuration of a wire bonding structure according to a first embodiment of the present invention. In this structure, the semiconductor chip 10 as the first member and the substrate 20 as the second member are electrically connected by wires 30 formed by wire bonding.

この構造体において、基板２０は、セラミック基板、プリント基板などの各種の配線基板、あるいはリードフレーム、ヒートシンクなどである。基板２０の一面（図１中の上面）には、半導体チップ１０が搭載されている。そして、半導体チップ１０は、図示しないダイボンド材により基板に接合されている。   In this structure, the substrate 20 is a wiring substrate such as a ceramic substrate or a printed circuit board, a lead frame, a heat sink, or the like. The semiconductor chip 10 is mounted on one surface (the upper surface in FIG. 1) of the substrate 20. The semiconductor chip 10 is bonded to the substrate by a die bond material (not shown).

半導体チップ１０は、シリコン半導体などにトランジスタ素子などによりＩＣ回路を形成してなる一般的なものであり、半導体プロセス形成されたものである。また、上記ダイボンド材は、Ａｇペースト、はんだ、導電性接着剤などである。   The semiconductor chip 10 is a general chip formed by forming an IC circuit using a transistor element or the like on a silicon semiconductor or the like, and is formed by a semiconductor process. The die bond material is an Ag paste, solder, a conductive adhesive, or the like.

この半導体チップ１０の表面上には、半導体チップ上の電極としてのＡｌ（アルミニウム）やＣｕ（銅）などよりなる電極１１が備えられている。また、基板２０の一面において半導体チップ１０の近傍には、基板上の電極としてのランド２１が設けられている。   On the surface of the semiconductor chip 10, an electrode 11 made of Al (aluminum), Cu (copper) or the like is provided as an electrode on the semiconductor chip. A land 21 as an electrode on the substrate is provided in the vicinity of the semiconductor chip 10 on one surface of the substrate 20.

このランド２１は、基板２０が配線基板の場合は、Ａｕ（金）やＣｕなどの箔や導体ペーストなどよりなるものであり、基板２０がリードフレームやヒートシンクの場合には、Ａｕなどのめっき膜などよりなる。   The land 21 is made of a foil such as Au (gold) or Cu or a conductive paste when the substrate 20 is a wiring substrate, and a plating film such as Au when the substrate 20 is a lead frame or a heat sink. Etc.

そして、この基板２０のランド２１と半導体チップ１０の電極１１とが、ボンディングワイヤ３０を介して結線されている。ここでは、半導体チップ１０の電極１１を１次ボンディング側、ランド２１を２次ボンディング側としてワイヤボンディングされている。   The land 21 of the substrate 20 and the electrode 11 of the semiconductor chip 10 are connected via a bonding wire 30. Here, wire bonding is performed with the electrode 11 of the semiconductor chip 10 as the primary bonding side and the land 21 as the secondary bonding side.

さらに、ここでは、両電極１１、２１間にて当該両電極１１、２１上にワイヤ３０が複数本、本実施形態では３本のワイヤ３０が重ねて形成されている。この３本のワイヤ３０によって、１組の両電極１１、２１が結線されることにより、基板２０と半導体チップ１０とが電気的に接続されている。   Further, here, a plurality of wires 30 are formed between the electrodes 11 and 21 on the electrodes 11 and 21, and in this embodiment, three wires 30 are overlapped. The substrate 20 and the semiconductor chip 10 are electrically connected by connecting the pair of electrodes 11 and 21 with the three wires 30.

ここで、ボンディングワイヤ３０は、後述するようにボールボンディング法を用いたワイヤボンディングにより形成されたものであり、たとえばＡｕやＣｕなどよりなる。そして、３本の各ワイヤ３０において半導体チップ１０の電極１１と接続された部分である１次ボンディング部は、ボール３０ａである。   Here, the bonding wire 30 is formed by wire bonding using a ball bonding method as described later, and is made of, for example, Au or Cu. A primary bonding portion that is a portion connected to the electrode 11 of the semiconductor chip 10 in each of the three wires 30 is a ball 30a.

また、２次ボンディング側であるランド２１には、接合性を向上させるためのボール３０ｂが設けられており、各ワイヤ３０の２次ボンディング部は、このランド２１上のボール３０ｂに接続されている部分である。   The land 21 on the secondary bonding side is provided with balls 30b for improving the bondability, and the secondary bonding portion of each wire 30 is connected to the ball 30b on the land 21. Part.

次に、本実施形態のワイヤボンディング構造体の製造方法について述べる。本ワイヤボンディング構造体は、基板２０と半導体チップ１０とを上記ダイマウント材を介して接続した後、ワイヤボンディングを行って、半導体チップ１０と基板２０とを接続することにより形成される。   Next, a method for manufacturing the wire bonding structure according to this embodiment will be described. The wire bonding structure is formed by connecting the semiconductor chip 10 and the substrate 20 by performing wire bonding after connecting the substrate 20 and the semiconductor chip 10 via the die mount material.

本実施形態におけるボンディングワイヤ３０の形成方法すなわちワイヤボンディング方法について、図２、図３を参照して述べる。図２、図３は、本実施形態に係るワイヤボンディング方法を用いたボンディングワイヤ３０の接続工程を示す工程図である。   A method for forming the bonding wire 30 in this embodiment, that is, a wire bonding method will be described with reference to FIGS. 2 and 3 are process diagrams showing a connection process of the bonding wire 30 using the wire bonding method according to the present embodiment.

ここでは、半導体チップ１０の電極１１と基板２０のランド２１とは、ボールボンディング法によりワイヤボンドされる。なお、本実施形態におけるワイヤボンディング装置は、一般的なボールボンディングを行うことのできるボールボンディング装置であり、図２に示されるような超音波などにより振動するワイヤボンディング用のツール１００を有するものである。   Here, the electrode 11 of the semiconductor chip 10 and the land 21 of the substrate 20 are wire-bonded by a ball bonding method. The wire bonding apparatus according to the present embodiment is a ball bonding apparatus that can perform general ball bonding, and includes a wire bonding tool 100 that vibrates by ultrasonic waves as shown in FIG. is there.

そして、ツール１００は、その内孔にボンディングワイヤ３０を挿入して当該ワイヤ３０を保持するとともに、先端部からワイヤ３０を引き出すようにしたものである。   And the tool 100 inserts the bonding wire 30 in the inner hole, hold | maintains the said wire 30, and pulls out the wire 30 from a front-end | tip part.

本実施形態の接続工程は、半導体チップ１０の電極１１に１次ボンディングを行い、次に基板２０のランド２１に２次ボンディングを行うが、この接続工程を両電極１１、２１間で３回行って、両電極１１、２１上にワイヤ３０を３本重ねて形成する。このとき、図２、図３に示されるように、３本のワイヤ３０は、下側のものから順に形成していく。   In the connection process of this embodiment, primary bonding is performed on the electrode 11 of the semiconductor chip 10 and then secondary bonding is performed on the land 21 of the substrate 20. This connection process is performed three times between the electrodes 11 and 21. Then, three wires 30 are formed on the electrodes 11 and 21 so as to overlap each other. At this time, as shown in FIGS. 2 and 3, the three wires 30 are formed in order from the lower one.

まず、一番下側のワイヤ３０すなわち１本目のワイヤ３０の接続工程では、２次ボンディング側の電極であるランド２１上にプレボールボンドを実行して、図２に示されるように、プレボール３０ｂを作成する。   First, in the connection process of the lowermost wire 30, that is, the first wire 30, a preball bond is performed on the land 21 which is an electrode on the secondary bonding side, and as shown in FIG. Create

このプレボールボンドは、一般的な方法行うことができる。すなわち、図２（ａ）、（ｂ）に示されるように、ワイヤボンディング用のツール１００の先端から引き出されたワイヤ３０の先端にボール３０ｂを形成し、ツール１００をランド２１上に下降させ、続いて、ツール１００によりボール３０ｂに対して加重と超音波を印加することにより、ボール３０ｂをランド２１に接合する。   This pre-ball bond can be performed by a general method. That is, as shown in FIGS. 2A and 2B, a ball 30b is formed at the tip of the wire 30 drawn from the tip of the wire bonding tool 100, and the tool 100 is lowered onto the land 21. Subsequently, the ball 30 b is joined to the land 21 by applying a load and an ultrasonic wave to the ball 30 b with the tool 100.

そして、ツール１００を上昇させることにより、ワイヤ３０をプルカットすれば、プレボール３０ｂが形成される。なお、このプレボール３０ｂは、２次ボンディング部における接合性を向上するために設けるものであり、当該接合性が確保されるならば、接続工程において省略してもよい。   And if the wire 30 is pulled by raising the tool 100, the pre-ball 30b is formed. The preball 30b is provided to improve the bondability in the secondary bonding portion, and may be omitted in the connecting step if the bondability is ensured.

次に、図２（ｃ）に示されるように、１本目のワイヤ３０の１次ボンディング、２次ボンディングを行う。図２（ｃ）では、上記ツール１００は省略してあるが、このときの当該ツール１００の動きを、図２（ｃ）中の破線矢印Ｙ１、Ｙ２、Ｙ３に示す。   Next, as shown in FIG. 2C, primary bonding and secondary bonding of the first wire 30 are performed. In FIG. 2C, the tool 100 is omitted, but the movement of the tool 100 at this time is indicated by broken arrows Y1, Y2, and Y3 in FIG.

図２（ｃ）中の矢印Ｙ１に示されるように、先端に上記ボール３０ａが設けられたワイヤ３０がセットされた上記ツール１００を、半導体チップ１０の電極１１上に下降させ、ツール１００により当該ボール３０ａに対して加重及び超音波印加を行うことにより、半導体チップ１０の電極１１上に当該ボール３０ａを接続する。これにより、ボールボンドとしての１次ボンディングが完了する。   As shown by an arrow Y1 in FIG. 2C, the tool 100 in which the wire 30 provided with the ball 30a at the tip is set is lowered onto the electrode 11 of the semiconductor chip 10, and the tool 100 performs the operation. The ball 30a is connected to the electrode 11 of the semiconductor chip 10 by applying weight and applying ultrasonic waves to the ball 30a. Thereby, the primary bonding as a ball bond is completed.

その後、１次ボンディングに続くワイヤ３０の引き出しを、半導体チップ１０の電極１１の垂直上方ではなく２次ボンディング側の電極であるランド２１に向かって水平面Ｈから斜め上方の方向に行う。この１次ボンディングに続くワイヤ３０の引き出しにおける上記ツール１００の動きは、図２（ｃ）中の矢印Ｙ２に示されるが、この矢印Ｙ２におけるツールの動きの詳細を図４に示す。   Thereafter, the wire 30 is pulled out following the primary bonding in a direction obliquely upward from the horizontal plane H toward the land 21 which is an electrode on the secondary bonding side, not vertically above the electrode 11 of the semiconductor chip 10. The movement of the tool 100 in the drawing of the wire 30 following the primary bonding is indicated by an arrow Y2 in FIG. 2C. Details of the movement of the tool at the arrow Y2 are shown in FIG.

この引き出しにおいては、図４（ａ）、（ｂ）に示されるように、ツール１００を高さＨの分、半導体チップ１０の電極１１から垂直に上昇させて１次ボンディング部３０ａから離し、その後、図４（ｃ）に示されるように、ランド２１に向かってツール１００を水平方向に移動させ、ランド２１上にツール１００を位置させる。ここまでが、上記矢印Ｙ２におけるツール１００の動きである。   In this extraction, as shown in FIGS. 4A and 4B, the tool 100 is vertically raised from the electrode 11 of the semiconductor chip 10 by the height H and separated from the primary bonding portion 30a, and thereafter As shown in FIG. 4C, the tool 100 is moved in the horizontal direction toward the land 21, and the tool 100 is positioned on the land 21. This is the movement of the tool 100 at the arrow Y2.

これにより、上記図２（ｃ）に示されるように、１次ボンディング後のワイヤ３０の引き出しが、当該ワイヤ３０の１次ボンディング部３０ａの根元部から中間部までがランド２１に向かって水平面Ｈから斜め上方の方向に延びる形状となるように行われることになる。   As a result, as shown in FIG. 2C, the wire 30 after the primary bonding is pulled out from the root portion to the intermediate portion of the primary bonding portion 30 a of the wire 30 toward the land 21 in the horizontal plane H. It will be performed so that it may become the shape extended in the diagonally upward direction.

また、別の言い方をすれば、１次ボンディング後のワイヤ３０の引き出しは、形成後の当該ワイヤ３０における頂部３０ｃが１次ボンディングされた半導体チップ１０の電極１１の垂直上方ではなく両電極１１、２１の間に位置するように、ランド２１に向かって水平面Ｈから斜め上方の方向に行われる（図２（ｃ）参照）。ここで、ワイヤ３０における頂部３０ｃとは、両電極１１、２１側から見てワイヤ３０の最も高い位置にある部位のことである。   In other words, the lead-out of the wire 30 after the primary bonding is not performed vertically above the electrode 11 of the semiconductor chip 10 where the top portion 30c of the wire 30 after the primary bonding is primary-bonded. It is performed in a diagonally upward direction from the horizontal plane H toward the land 21 so as to be located between the two (see FIG. 2C). Here, the top portion 30 c of the wire 30 is a portion at the highest position of the wire 30 when viewed from both the electrodes 11 and 21 side.

こうして、１次ボンディング後の引き出しを行い、その後、図２（ｃ）中の矢印Ｙ３に示されるようにランド２１のプレボール３０ｂ上方に位置する上記ツール１００を、ランド２１へ下降させることにより、ワイヤ３０をランド２１上に着地させ、ステッチ形状にて接合して接続する。   In this way, after the primary bonding is performed, the tool 100 positioned above the preball 30b of the land 21 is lowered to the land 21 as indicated by an arrow Y3 in FIG. 30 is landed on the land 21 and joined and connected in a stitch shape.

この後、ツール１００を上昇させることにより、ワイヤ３０をプルカットする。これにより、２次ボンディング（ステッチボンド）が完了するとともに、図２（ｃ）に示されるように、１本目のワイヤ３０の接続工程が完了する。   Thereafter, the wire 30 is pulled by raising the tool 100. Thereby, the secondary bonding (stitch bond) is completed, and the connection process of the first wire 30 is completed as shown in FIG.

続いて、図３（ａ）、（ｂ）に示されるように、下側から２番目のワイヤ３０すなわち２本目のワイヤ３０の接続工程を行う。この２本目のワイヤ３０についても、上記１本目のワイヤ３０の接続工程と基本的に同様に行う。具体的には、１本目のワイヤ３０の２次ボンディング部の上に、上記プレボール３０ｂを形成し、その後、１本目のワイヤ３０の１次ボンディング部３０ａの上に、２本目のワイヤ３０を１次ボンディングする。   Subsequently, as shown in FIGS. 3A and 3B, a connecting process of the second wire 30 from the lower side, that is, the second wire 30 is performed. The second wire 30 is also basically performed in the same manner as the first wire 30 connecting step. Specifically, the pre-ball 30 b is formed on the secondary bonding portion of the first wire 30, and then the second wire 30 is 1 on the primary bonding portion 30 a of the first wire 30. Next, bond.

そして、２本目のワイヤ３０についても、上記１本目と同様に１次ボンディングに続くワイヤ３０の引き出しを行い、その後、プレボール３０ｂ上に２本目のワイヤ３０を２次ボンディングする。それにより、１本目のワイヤ３０の上に２本目のワイヤ３０が重ねて形成される。   As for the second wire 30, similarly to the first wire, the wire 30 is pulled out following the primary bonding, and then the second wire 30 is secondarily bonded onto the preball 30 b. Thereby, the second wire 30 is formed so as to overlap the first wire 30.

その後、図３（ｃ）、（ｄ）に示されるように、一番上側のワイヤ３０すなわち３本目のワイヤ３０の接続工程を行う。この３本目については、さらにその上に重ねられるワイヤが無いため、ここでは、一般的なワイヤボンディングを行う。   Thereafter, as shown in FIGS. 3C and 3D, a connection process of the uppermost wire 30, that is, the third wire 30 is performed. Since there is no wire superimposed on the third wire, general wire bonding is performed here.

つまり、３本目のワイヤ３０については、１次ボンディング後のワイヤ３０の引き出しを、当該ワイヤ３０の１次ボンディング部３０ａ側の根元部から中間部までが半導体チップ１０の電極１１の垂直上方に延びる形状となるように行い、形成後の３本目のワイヤ３０における頂部３０ｃを、半導体チップ１０の電極１１の垂直上方に位置させる。   That is, with respect to the third wire 30, the wire 30 after the primary bonding is extended from the root portion of the wire 30 on the primary bonding portion 30 a side to the middle portion vertically above the electrode 11 of the semiconductor chip 10. The top portion 30 c of the third wire 30 after the formation is positioned vertically above the electrode 11 of the semiconductor chip 10.

こうして、１組の電極１１とランド２１との間で、３本のワイヤ３０が積み重ねられて形成される。この結果、上記図１に示す構成を有する本実施形態のワイヤボンディング構造体が製造される。   Thus, the three wires 30 are stacked and formed between the pair of electrodes 11 and the land 21. As a result, the wire bonding structure of this embodiment having the configuration shown in FIG. 1 is manufactured.

ところで、本実施形態によれば、従来問題となっていた１次ボンディング側の根元部から垂直上方に延びて形成されるワイヤのネック部（上記図９参照）を無くして、ワイヤを重ねるときの当該ネック部潰れによるワイヤ変形を防止できるため、１組の電極１１、２１間にて複数本のワイヤ３０を重ねるにあたって適切なワイヤ形状を形成することが可能となる。   By the way, according to this embodiment, the wire neck portion (see FIG. 9) formed by extending vertically upward from the root portion on the primary bonding side, which has been a problem in the past, is eliminated, and the wires are overlapped. Since wire deformation due to the crushing of the neck portion can be prevented, an appropriate wire shape can be formed when a plurality of wires 30 are stacked between the pair of electrodes 11 and 21.

そして、半導体チップ１０上に設ける電極１１の個数を少なくすることができるだけでなく、ランド２１の個数も少なくでき、チップサイズおよび基板サイズを小さくすることが可能になる。また、本実施形態の構造体においては、上記図２（ｃ）に示したような１次ボンディング後のワイヤ３０の引き出し形状がそのまま継承されている。   Further, not only can the number of electrodes 11 provided on the semiconductor chip 10 be reduced, but also the number of lands 21 can be reduced, and the chip size and the substrate size can be reduced. Further, in the structure of the present embodiment, the lead-out shape of the wire 30 after the primary bonding as shown in FIG. 2C is inherited as it is.

ここで、上記した１次ボンディング後のワイヤ３０の引き出しは、２次ボンディング側のランド２１に向かって水平面Ｈから斜め上方の方向に向かって行われるが、当該斜め上方の方向とは、当該斜め上方の方向と上記水平面Ｈとのなす角度θ（上記図１、図２（ｃ）、図３（ｂ）参照）が１０°以上４５°以下となっていることが好ましい。以下、この角度を引き出し角度θという。   Here, the drawing of the wire 30 after the primary bonding described above is performed in a diagonally upward direction from the horizontal plane H toward the land 21 on the secondary bonding side. It is preferable that an angle θ (see FIGS. 1, 2 (c), and 3 (b)) formed by the upper direction and the horizontal plane H is 10 ° or more and 45 ° or less. Hereinafter, this angle is referred to as a drawing angle θ.

このように引き出し角度θを１０〜４５°とすれば、その上側のワイヤ３０を１次ボンディングするときに、その下側のワイヤ３０が変形しにくく、且つ半導体チップ１０に接触して短絡しにくいものとなる。   Thus, when the lead angle θ is 10 to 45 °, when the upper wire 30 is subjected to primary bonding, the lower wire 30 is not easily deformed, and the semiconductor chip 10 is not easily short-circuited. It will be a thing.

図５は、この引き出し角度θと上記高さＨ（図４（ｂ）参照）との関係を示す図である。角度θを大きくしていくには、上記高さＨを大きくしていけばよい。予めこの図５の関係を求めておけば、この関係に基づいて、高さＨを決めてツール１００を移動させれば、上記引き出し角度θを所望の大きさにすることができる。   FIG. 5 is a diagram showing the relationship between the pulling angle θ and the height H (see FIG. 4B). In order to increase the angle θ, the height H may be increased. If the relationship of FIG. 5 is obtained in advance, the drawing angle θ can be set to a desired size by determining the height H and moving the tool 100 based on this relationship.

なお、本実施形態の上記例では、半導体チップ１０の電極１１を１次ボンディング側、ランド２１を２次ボンディング側としてワイヤボンディングしたものであったが、ランド２１を１次ボンディング側、半導体チップ１０の電極１１を２次ボンディング側として、上記同様にワイヤボンディングを行ってもよい。   In the above example of the present embodiment, the electrode 11 of the semiconductor chip 10 is wire-bonded with the primary bonding side and the land 21 as the secondary bonding side, but the land 21 is connected with the primary bonding side and the semiconductor chip 10. Wire bonding may be performed in the same manner as described above with the electrode 11 as the secondary bonding side.

また、本実施形態において、１番上の３本目のワイヤ３０についても、１本目および２本目のワイヤ３０と同様の要領で、１次ボンディングに続くワイヤの引き出しを行うようにしてもよい。   In the present embodiment, the third wire 30 at the top may be drawn out following the primary bonding in the same manner as the first and second wires 30.

また、上記例においては、半導体チップ１０の電極１１とランド２１との間を３本のワイヤ３０でワイヤボンディングするように構成したが、これに限るものではなく、２本または４本以上のワイヤでワイヤボンディングするようにしてもよい。   In the above example, the electrode 11 and the land 21 of the semiconductor chip 10 are wire-bonded with the three wires 30. However, the present invention is not limited to this, and two or four or more wires are used. Wire bonding may be used.

（第２実施形態）
図６は、本発明の第２実施形態に係るワイヤボンディング方法を用いたボンディングワイヤ３０の接続工程を示す工程図である。 (Second Embodiment)
FIG. 6 is a process diagram illustrating a connection process of the bonding wire 30 using the wire bonding method according to the second embodiment of the present invention.

本実施形態では、上記第１実施形態と同様に、１本目のワイヤ３０の接続工程では、ランド２１上にプレボール３０ｂを作成し、その後、上記第１実施形態における１本目のワイヤ３０と同様に、１次ボンディング、１次ボンディングに続くワイヤ３０の引き出し、２次ボンディングを行い、１本目のワイヤ３０を接続する。   In the present embodiment, as in the first embodiment, in the connection process of the first wire 30, the preball 30 b is created on the land 21, and thereafter, similarly to the first wire 30 in the first embodiment. The wire 30 is pulled out following the primary bonding and the primary bonding, the secondary bonding is performed, and the first wire 30 is connected.

この後、２本目のワイヤ３０の接続工程では、まず、図６（ａ）に示されるように、１本目のワイヤ３０の２次ボンディング部の上に、上記プレボール３０ｂを形成する。そして、図６（ｂ）に示されるように、２本目のワイヤ３０の１次ボンディングにおいては、当該２本目のワイヤ３０の１次ボンディング部３０ａの一部が、その下側に位置する１本目のワイヤ３０の１次ボンディング部３０ａからはみ出すようにする。   Thereafter, in the step of connecting the second wire 30, first, as shown in FIG. 6A, the preball 30 b is formed on the secondary bonding portion of the first wire 30. As shown in FIG. 6B, in the primary bonding of the second wire 30, a part of the primary bonding portion 30a of the second wire 30 is located below the first wire 30. The wire 30 protrudes from the primary bonding portion 30a.

このはみ出し方向は、２次ボンディング側の電極であるランド２１とは反対側の方向（図６（ｂ）中の右方向）とする。このように、２本目のワイヤ３０については、１本目のワイヤ３０の１次ボンディング部３０ａに対して位置をずらしながら、１次ボンディングを行う。そして、２本目のワイヤ３０の２次ボンディングを行うことによって、２本目のワイヤ３０が形成される。   The protruding direction is the direction opposite to the land 21 which is the electrode on the secondary bonding side (the right direction in FIG. 6B). As described above, the first wire 30 is subjected to primary bonding while being shifted in position with respect to the primary bonding portion 30a of the first wire 30. Then, the second wire 30 is formed by performing secondary bonding of the second wire 30.

同様に、図６（ｃ）、（ｄ）に示されるように、３本目のワイヤ３０についても、その下側に位置する２本目のワイヤ３０の１次ボンディング部３０ａからランド２１とは反対側の方向へはみ出るように位置をずらしながら、１次ボンディング、さらには２次ボンディングを行う。こうして、本実施形態においても、３本のワイヤ３０が重ねられて形成される。   Similarly, as shown in FIGS. 6C and 6D, the third wire 30 is also opposite to the land 21 from the primary bonding portion 30 a of the second wire 30 positioned below the third wire 30. Primary bonding and further secondary bonding are performed while shifting the position so as to protrude in the direction of. Thus, also in this embodiment, the three wires 30 are overlapped and formed.

本実施形態のワイヤボンディング方法によれば、ワイヤ３０を重ねて行くにあたって、その下側に位置するワイヤ３０の１次ボンディング部３０ａ寄りの部分に対して、その上側のワイヤ３０の１次ボンディング部３０ａが外れた位置に形成されるため、当該下側のワイヤ３０の１次ボンディング部３０寄りの部分の変形をより小さくできる。   According to the wire bonding method of the present embodiment, when the wires 30 are stacked, the primary bonding portion of the upper wire 30 with respect to the portion near the primary bonding portion 30a of the wire 30 positioned below the wire 30. Since 30a is formed at a position away from it, the deformation of the lower wire 30 near the primary bonding portion 30 can be further reduced.

（第３実施形態）
図７は、本発明の第３実施形態に係るワイヤボンディング方法を用いたボンディングワイヤ３０の接続工程を示す工程図である。 (Third embodiment)
FIG. 7 is a process diagram showing a connection process of the bonding wire 30 using the wire bonding method according to the third embodiment of the present invention.

本実施形態では、上記第１実施形態と同様に、半導体チップ１０の電極１１を１次ボンディング側、ランド２１を２次ボンディング側として１本目のワイヤ３０の接続工程を行い、１本目のワイヤ３０を形成する。   In the present embodiment, as in the first embodiment, the connection process of the first wire 30 is performed using the electrode 11 of the semiconductor chip 10 as the primary bonding side and the land 21 as the secondary bonding side. Form.

次に、本実施形態では、ランド２１を１次ボンディング側、半導体チップ１０の電極１１を２次ボンディング側として、２本目のワイヤ３０を形成する。その後は、半導体チップ１０の電極１１を１次ボンディング側、ランド２１を２次ボンディング側として３本目のワイヤ３０を形成する。   Next, in the present embodiment, the second wire 30 is formed with the land 21 as the primary bonding side and the electrode 11 of the semiconductor chip 10 as the secondary bonding side. Thereafter, the third wire 30 is formed with the electrode 11 of the semiconductor chip 10 as the primary bonding side and the land 21 as the secondary bonding side.

つまり、本実施形態では、ワイヤの張り方の順序を交互にすることで、上側のワイヤ３０における２次ボンディング側のプレボールを、その下側のワイヤ３０の１次ボンディング部３０ａであるボールによって兼用できるため、ボール形成時間やツール１００の移動時間を短くできる。   That is, in this embodiment, the pre-ball on the secondary bonding side of the upper wire 30 is shared by the ball that is the primary bonding portion 30a of the lower wire 30 by alternating the order of wire tension. Therefore, the ball formation time and the movement time of the tool 100 can be shortened.

また、本実施形態において、ランド２１を１次ボンディング側としてワイヤ３０を形成する場合でも、上記実施形態と同様に、１次ボンディング後のワイヤ３０の引き出しを、当該ワイヤ３０の１次ボンディング部３０ａの根元部から中間部までがランド２１に向かって水平面Ｈから斜め上方の方向に延びる形状となるように行うことはもちろんである。   Further, in the present embodiment, even when the wire 30 is formed with the land 21 as the primary bonding side, the wire 30 is pulled out after the primary bonding, as in the above-described embodiment, and the primary bonding portion 30a of the wire 30 is extracted. It goes without saying that the base part to the middle part of the slab are shaped so as to extend obliquely upward from the horizontal plane H toward the land 21.

（他の実施形態）
なお、上記実施形態では、第１の部材は半導体チップ、第２の部材は基板であったが、第１の部材、第２の部材は、共にワイヤボンディングされる電極を有するものであればよく、これらに限定されるものではない。たとえば、第１の部材および第２の部材の組合せとしては、当該両部材がともに基板である場合や、ともに半導体チップである場合も可能である。 (Other embodiments)
In the above embodiment, the first member is a semiconductor chip, and the second member is a substrate. However, the first member and the second member may be any members as long as they have electrodes that are wire-bonded together. However, it is not limited to these. For example, the combination of the first member and the second member may be a case where both the members are substrates or a semiconductor chip.

本発明の第１実施形態に係るワイヤボンディング構造体の概略断面図である。1 is a schematic cross-sectional view of a wire bonding structure according to a first embodiment of the present invention. 第１実施形態に係るワイヤボンディング方法を示す工程図である。It is process drawing which shows the wire bonding method which concerns on 1st Embodiment. 図２に続くワイヤボンディング方法を示す工程図である。FIG. 3 is a process diagram illustrating a wire bonding method following FIG. 2. 第１実施形態における１次ボンディングに続くワイヤの引き出しにおけるツールの動きの詳細を示す図である。It is a figure which shows the detail of the movement of the tool in the drawer | drawing-out of the wire following the primary bonding in 1st Embodiment. 引き出し角度θと高さＨとの関係を示す図である。It is a figure which shows the relationship between drawer angle (theta) and height H. FIG. 本発明の第２実施形態に係るワイヤボンディング方法を示す工程図である。It is process drawing which shows the wire bonding method which concerns on 2nd Embodiment of this invention. 本発明の第３実施形態に係るワイヤボンディング方法を示す工程図である。It is process drawing which shows the wire bonding method which concerns on 3rd Embodiment of this invention. 本発明者の試作としてのワイヤボンディング構造体を示す概略断面図である。It is a schematic sectional drawing which shows the wire bonding structure as a trial manufacture of this inventor. 本発明者の試作としてのワイヤボンディング方法を示す図である。It is a figure which shows the wire bonding method as a trial manufacture of this inventor.

符号の説明Explanation of symbols

１０…半導体チップ、１１…半導体チップの電極、２０…基板、２１…基板の電極、
３０…ボンディングワイヤ、３０ａ…ボンディングワイヤの１次ボンディング部、
３０ｃ…ボンディングワイヤの頂部、１００…ツール、θ…引き出し角度。 DESCRIPTION OF SYMBOLS 10 ... Semiconductor chip, 11 ... Electrode of semiconductor chip, 20 ... Substrate, 21 ... Electrode of substrate,
30 ... Bonding wire, 30a ... Primary bonding part of bonding wire,
30c: Top of bonding wire, 100: Tool, θ: Pull-out angle.

Claims (5)

先端部からワイヤ（３０）が引き出されるようになっているワイヤボンディング用のツール（１００）によって、第１の部材（１０）上の電極（１１）および第２の部材（２０）上の電極（２１）の一方の電極に１次ボンディングを行い、
次に、他方の電極まで前記ワイヤ（３０）を引き出して当該他方の電極に２次ボンディングするという接続工程を行うことで、前記両電極（１１、２１）間を前記ワイヤ（３０）により結線するワイヤボンディング方法において、
前記両電極（１１、２１）間で前記接続工程を複数回行って前記両電極（１１、２１）上に前記ワイヤ（３０）を複数本重ねて形成するものであり、
前記重ねられた複数本の前記ワイヤ（３０）のうち最上部に位置する前記ワイヤ（３０）よりも下側に位置する前記ワイヤ（３０）を形成する前記接続工程では、前記１次ボンディング後の前記ワイヤ（３０）の引き出しを、当該ワイヤ（３０）における１次ボンディング部（３０ａ）側の根元部から中間部までが前記２次ボンディング側の前記電極（２１）に向かって水平面から斜め上方の方向に延びる形状となるように行い、
その後、当該ワイヤ（３０）を前記２次ボンディング側の前記電極（２１）に着地させて、前記２次ボンディングを行うものであり、
前記ワイヤ（３０）の前記１次ボンディング部（３０ａ）の一部が、その下側に位置する前記ワイヤ（３０）の前記１次ボンディング部（３０ａ）から前記２次ボンディング側の前記電極（２１）とは反対側の方向へはみ出るように位置をずらしながら、前記ワイヤ（３０）を重ねていくことを特徴とするワイヤボンディング方法。 The electrode (11) on the first member (10) and the electrode on the second member (20) (by the wire bonding tool (100) in which the wire (30) is drawn from the tip end ( 21) Perform primary bonding on one of the electrodes,
Next, the wire (30) is connected to the other electrode by performing a connecting step of drawing the wire (30) to the other electrode and performing secondary bonding to the other electrode. In the wire bonding method,
The connection step is performed a plurality of times between the electrodes (11, 21) to form a plurality of the wires (30) on the electrodes (11, 21),
In the connecting step of forming the wire (30) positioned below the uppermost wire (30) among the plurality of the stacked wires (30), in the connection step after the primary bonding Pulling out the wire (30) from the base part of the wire (30) on the primary bonding part (30a) side to the intermediate part is obliquely upward from the horizontal plane toward the electrode (21) on the secondary bonding side. Doing so that the shape extends in the direction,
Then, the wire (30) is landed on the electrode (21) on the secondary bonding side, and the secondary bonding is performed .
A part of the primary bonding part (30a) of the wire (30) is formed from the primary bonding part (30a) of the wire (30) located below the electrode (21 on the secondary bonding side). The wire bonding method is characterized in that the wire (30) is piled up while shifting the position so as to protrude in the direction opposite to () . 先端部からワイヤ（３０）が引き出されるようになっているワイヤボンディング用のツール（１００）によって、第１の部材（１０）上の電極（１１）および第２の部材（２０）上の電極（２１）の一方の電極に１次ボンディングを行い、
次に、他方の電極まで前記ワイヤ（３０）を引き出して当該他方の電極に２次ボンディングするという接続工程を行うことで、前記両電極（１１、２１）間を前記ワイヤ（３０）により結線するワイヤボンディング方法において、
前記両電極（１１、２１）間で前記接続工程を複数回行って前記両電極（１１、２１）上に前記ワイヤ（３０）を複数本重ねて形成するものであり、
前記重ねられた複数本の前記ワイヤ（３０）のうち最上部に位置する前記ワイヤ（３０）よりも下側に位置する前記ワイヤ（３０）を形成する前記接続工程では、前記１次ボンディング後の前記ワイヤ（３０）の引き出しを、形成後の当該ワイヤ（３０）における頂部（３０ｃ）が前記１次ボンディングされた前記電極（１１）の垂直上方ではなく前記両電極（１１、２１）の間に位置するように、前記２次ボンディング側の前記電極（２１）に向かって水平面から斜め上方の方向に向かって行い、
その後、当該ワイヤ（３０）を前記２次ボンディング側の前記電極（２１）に着地させて、前記２次ボンディングを行うものであり、
前記ワイヤ（３０）の前記１次ボンディング部（３０ａ）の一部が、その下側に位置する前記ワイヤ（３０）の前記１次ボンディング部（３０ａ）から前記２次ボンディング側の前記電極（２１）とは反対側の方向へはみ出るように位置をずらしながら、前記ワイヤ（３０）を重ねていくことを特徴とするワイヤボンディング方法。 The electrode (11) on the first member (10) and the electrode on the second member (20) (by the wire bonding tool (100) in which the wire (30) is drawn from the tip end ( 21) Perform primary bonding on one of the electrodes,
Next, the wire (30) is connected to the other electrode by performing a connecting step of drawing the wire (30) to the other electrode and performing secondary bonding to the other electrode. In the wire bonding method,
The connection step is performed a plurality of times between the electrodes (11, 21) to form a plurality of the wires (30) on the electrodes (11, 21),
In the connecting step of forming the wire (30) positioned below the uppermost wire (30) among the plurality of the stacked wires (30), in the connection step after the primary bonding The lead (30) of the wire (30) after the formation is formed between the electrodes (11, 21) instead of the top (30c) of the wire (30) between the electrodes (11, 21) rather than vertically above the primary-bonded electrode (11). In order to be located, it is performed from the horizontal plane toward the obliquely upward direction toward the electrode (21) on the secondary bonding side,
Then, the wire (30) is landed on the electrode (21) on the secondary bonding side, and the secondary bonding is performed .
A part of the primary bonding part (30a) of the wire (30) is formed from the primary bonding part (30a) of the wire (30) located below the electrode (21 on the secondary bonding side). The wire bonding method is characterized in that the wire (30) is piled up while shifting the position so as to protrude in the direction opposite to () . 前記斜め上方の方向とは、当該方向と前記水平面とのなす角度（θ）が１０〜４５°となっているものであることを特徴とする請求項１または２に記載のワイヤボンディング方法。   3. The wire bonding method according to claim 1, wherein the obliquely upward direction is an angle (θ) formed by the direction and the horizontal plane being 10 to 45 °. 第１の部材（１０）上の電極（１１）および第２の部材（２０）上の電極（２１）のうち一方の電極に１次ボンディングを行い、他方の電極に２次ボンディングすることにより、前記両電極（１１、２１）間を前記ワイヤ（３０）により結線してなるワイヤボンディング構造体において、
前記両電極（１１、２１）間にて前記両電極（１１、２１）上に前記ワイヤ（３０）が複数本重ねて形成されており、
前記重ねられた複数本の前記ワイヤ（３０）のうち最上部に位置する前記ワイヤ（３０）よりも下側に位置する前記ワイヤ（３０）は、当該ワイヤ（３０）における１次ボンディング部（３０ａ）側の根元部から中間部までが前記２次ボンディング側の前記電極（２１）に向かって水平面から斜め上方の方向に延びる形状となるように引き出されており、
前記ワイヤ（３０）の前記１次ボンディング部（３０ａ）の一部が、その下側に位置する前記ワイヤ（３０）の前記１次ボンディング部（３０ａ）から前記２次ボンディング側の前記電極（２１）とは反対側の方向へはみ出るように位置をずらしながら、前記ワイヤ（３０）が重ねられていることを特徴とするワイヤボンディング構造体。 By performing primary bonding on one of the electrodes (11) on the first member (10) and the electrode (21) on the second member (20) and performing secondary bonding on the other electrode, In the wire bonding structure formed by connecting the electrodes (11, 21) with the wire (30),
A plurality of the wires (30) are stacked on the electrodes (11, 21) between the electrodes (11, 21);
The wire (30) positioned below the uppermost wire (30) among the plurality of the stacked wires (30) is a primary bonding portion (30a) of the wire (30). ) Side root part to the middle part are drawn out so as to have a shape extending obliquely upward from the horizontal plane toward the electrode (21) on the secondary bonding side ,
A part of the primary bonding part (30a) of the wire (30) is formed from the primary bonding part (30a) of the wire (30) located below the electrode (21 on the secondary bonding side). The wire bonding structure is characterized in that the wire (30) is overlapped while shifting the position so as to protrude in the direction opposite to () . 第１の部材（１０）上の電極（１１）および第２の部材（２０）上の電極（２１）のうち一方の電極に１次ボンディングを行い、他方の電極に２次ボンディングすることにより、前記両電極（１１、２１）間を前記ワイヤ（３０）により結線してなるワイヤボンディング構造体において、
前記両電極（１１、２１）間にて前記両電極（１１、２１）上に前記ワイヤ（３０）が複数本重ねて形成されており、
前記重ねられた複数本の前記ワイヤ（３０）のうち最上部に位置する前記ワイヤ（３０）よりも下側に位置する前記ワイヤ（３０）は、当該ワイヤ（３０）における頂部（３０ｃ）が前記１次ボンディングされた前記電極（１１）の垂直上方ではなく前記両電極（１１、２１）の間に位置するように、前記２次ボンディング側の前記電極（２１）に向かって水平面から斜め上方の方向に向かって引き出されており、
前記ワイヤ（３０）の前記１次ボンディング部（３０ａ）の一部が、その下側に位置する前記ワイヤ（３０）の前記１次ボンディング部（３０ａ）から前記２次ボンディング側の前記電極（２１）とは反対側の方向へはみ出るように位置をずらしながら、前記ワイヤ（３０）が重ねられていることを特徴とするワイヤボンディング構造体。 By performing primary bonding on one of the electrodes (11) on the first member (10) and the electrode (21) on the second member (20) and performing secondary bonding on the other electrode, In the wire bonding structure formed by connecting the electrodes (11, 21) with the wire (30),
A plurality of the wires (30) are stacked on the electrodes (11, 21) between the electrodes (11, 21);
Of the plurality of the stacked wires (30), the wire (30) positioned below the uppermost wire (30) has a top portion (30c) in the wire (30). It is obliquely above the horizontal plane toward the electrode (21) on the secondary bonding side so as to be positioned between the electrodes (11, 21), not vertically above the electrode (11) subjected to primary bonding. Pulled out in the direction ,
A part of the primary bonding part (30a) of the wire (30) is formed from the primary bonding part (30a) of the wire (30) located below the electrode (21 on the secondary bonding side). The wire bonding structure is characterized in that the wire (30) is overlapped while shifting the position so as to protrude in the direction opposite to () .
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