JP2008085094A - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device Download PDF

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Publication number
JP2008085094A
JP2008085094A JP2006263815A JP2006263815A JP2008085094A JP 2008085094 A JP2008085094 A JP 2008085094A JP 2006263815 A JP2006263815 A JP 2006263815A JP 2006263815 A JP2006263815 A JP 2006263815A JP 2008085094 A JP2008085094 A JP 2008085094A
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Japan
Prior art keywords
bonding
ball
wire
semiconductor device
manufacturing
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JP2006263815A
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Japanese (ja)
Inventor
Noboru Okane
昇 岡根
Ryoji Matsushima
良二 松嶋
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Toshiba Corp
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Toshiba Corp
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Priority to JP2006263815A priority Critical patent/JP2008085094A/en
Publication of JP2008085094A publication Critical patent/JP2008085094A/en
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Abstract

<P>PROBLEM TO BE SOLVED: To improve the manufacturing yield, reliability, and the like of a semiconductor device whereto reverse bonding is applied, by increasing its joining strength at the time of ball joint to the lead portion of a lead frame. <P>SOLUTION: In a manufacturing method of the semiconductor device, a spare joining ball 13 formed at the end of such a bonding wire 12 as an Au wire is so contacted pressingly with a lead portion 4 of a lead frame 2 as to move the contacted one while rubbing it over the surface of the lead portion 4 and as to form a deposit layer 14 made of the same material as the bonding wire 12. Then, a joining ball formed at the end of the wire 12 is subjected to ball joint to the deposit layer 14 formed on the surface of the lead portion 4. Thereafter, the bonding wire 12 is subjected to stitch bonding to the electrode pad of a semiconductor element mounted on an element mounting portion of the lead frame 2. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明はリードフレーム上に実装された半導体素子の接続にワイヤボンディングを適用した半導体装置の製造方法に関する。   The present invention relates to a method for manufacturing a semiconductor device in which wire bonding is applied to connection of semiconductor elements mounted on a lead frame.

リードフレームに実装された半導体素子とリードフレームのリード部とをワイヤで接続する方法としては、半導体素子側にボール接合する正ボンディングと、リードフレーム側にボール接合する逆ボンディングとが知られている。これらのうち、一般的には正ボンディングが使用されているが、半導体素子の小型・高精細化等に対応するために、逆ボンディングの適用が増加している（例えば特許文献１参照）。また、複数の半導体素子を積層した半導体装置ではリード部のファインピッチ化が進んだ結果として、逆ボンディングを適用しないとパッケージデザイン自体が成立しないものもでてきている。   As a method of connecting the semiconductor element mounted on the lead frame and the lead portion of the lead frame with a wire, there are known a positive bonding in which the ball is bonded to the semiconductor element side and a reverse bonding in which the ball is bonded to the lead frame side. . Among these, the normal bonding is generally used, but the application of reverse bonding is increasing in order to cope with the miniaturization and high definition of the semiconductor element (for example, see Patent Document 1). Also, in semiconductor devices in which a plurality of semiconductor elements are stacked, as a result of the finer pitch of the lead portions, there is a case where the package design itself cannot be established unless reverse bonding is applied.

逆ボンディングを実施するにあたっては、まずリードフレームのＡｇメッキされたリード部に対してＡｕ線の先端に形成されたＡｕボールを接合する。この際、Ａｇメッキ層とＡｕボールとの接合強度が低いため、逆ボンディングを適用する場合にはＡｕボールの接合強度を高める必要がある。Ａｇメッキ層に対するＡｕボールの接合強度を高める方法としては、例えばＡｕボールの圧着後のボール径を大きくする方法が知られている。   In carrying out reverse bonding, an Au ball formed at the tip of the Au wire is first bonded to the Ag-plated lead portion of the lead frame. At this time, since the bonding strength between the Ag plating layer and the Au ball is low, it is necessary to increase the bonding strength of the Au ball when reverse bonding is applied. As a method for increasing the bonding strength of the Au ball to the Ag plating layer, for example, a method of increasing the ball diameter after pressure bonding of the Au ball is known.

しかしながら、この方法では圧着後のボール径が本来求められる円形から逸脱したり、圧着後のＡｕボールの厚さが薄くなりすぎる等、品質的に好ましくないボール形状となる傾向がある。さらに、ファインピッチ化が進められたリード部ではボール径の増大に限界がある。また、リードフレームに施すメッキをＡｇメッキからＡｕメッキに変えることによっても、リード部に対するＡｕボールの接合強度を高めることができる。しかし、Ａｕメッキは高コストであるため、リードフレームの製造コストの上昇を招いてしまう。   However, with this method, the ball diameter after pressure bonding tends to deviate from the originally required circle, or the Au ball thickness after pressure bonding becomes too thin. Furthermore, there is a limit to the increase of the ball diameter in the lead portion where the fine pitch has been advanced. Also, the bonding strength of the Au ball to the lead portion can be increased by changing the plating applied to the lead frame from Ag plating to Au plating. However, since Au plating is expensive, the lead frame manufacturing cost increases.

なお、ステッチ接合側の接合強度を高める方法として、例えばＸ−Ｙテーブルを振動させる等のスクラブ手段を用いてキャピラリを擦り付けて、ワイヤと配線基材（薄膜配線テープ等）の内部リードとを接合する方法が提案されている（例えば特許文献２参照）。キャピラリを擦り付ける方法は、ステッチ接合側には有効であるものの、ボール接合側は接合面積が大きいことから必ずしも十分な効果を得ることはできない。   As a method for increasing the bonding strength on the stitch bonding side, for example, the capillary is rubbed by using a scrubbing means such as vibrating an XY table, and the wire and the internal lead of the wiring substrate (thin film wiring tape, etc.) are bonded. Has been proposed (see, for example, Patent Document 2). Although the method of rubbing the capillaries is effective on the stitch bonding side, the ball bonding side has a large bonding area, so that a sufficient effect cannot always be obtained.

特許文献３には、ボール接合時にキャピラリを垂直方向に移動させると同時に水平方向に移動させることによって、ボールに斜め方向の荷重を加える方法が記載されている。この方法はボールをランドに擦り付けて接合強度を高める方法であるが、あくまでもボール接合に使用するボール自体をランドに擦り付けているため、ボールの擦り付けによる接合強度の向上効果には限界がある。従って、この方法をＡｇメッキされたリード部にＡｕボールを接合する工程で適用したとしても、十分に接合強度を高めることはできない。
特開2004-056021号公報 特開平11-238753号公報 特開2000-357700号公報 Patent Document 3 describes a method of applying an oblique load to a ball by moving the capillary in the vertical direction and simultaneously moving in the horizontal direction at the time of ball bonding. This method is a method of increasing the bonding strength by rubbing the ball against the land, but since the ball itself used for ball bonding is rubbed against the land, there is a limit to the effect of improving the bonding strength by rubbing the ball. Therefore, even if this method is applied in the step of bonding the Au ball to the Ag-plated lead portion, the bonding strength cannot be sufficiently increased.
JP 2004-056021 A JP 11-238753 JP 2000-357700 A

本発明の目的は、逆ボンディングを適用した半導体装置の製造歩留りや信頼性等を高めることを可能にした半導体装置の製造方法を提供することにある。   An object of the present invention is to provide a method of manufacturing a semiconductor device that can improve the manufacturing yield and reliability of the semiconductor device to which reverse bonding is applied.

本発明の態様に係る半導体装置の製造方法は、リードフレーム上に半導体素子を実装して半導体装置を製造するにあたり、前記リードフレームのリード部に、ボンディングワイヤの先端に形成された予備接合用ボールを圧接する工程と、前記予備接合用ボールを前記リード部の表面に擦り付けながら移動させ、前記ボンディングワイヤと同一材料の堆積層を前記リード部上に形成する工程と、前記ボンディングワイヤの先端に形成された接合用ボールを、前記リード部の表面に形成された前記堆積層上にボール接合する工程と、前記ボンディングワイヤを繰り出してワイヤリングした後、前記ボンディングワイヤを前記リードフレームの素子マウント部に実装された前記半導体素子の電極パッドにステッチ接合する工程とを具備することを特徴としている。   A method of manufacturing a semiconductor device according to an aspect of the present invention provides a pre-bonding ball formed at the tip of a bonding wire on a lead portion of the lead frame when a semiconductor element is mounted on a lead frame. Press-contacting, moving the pre-bonding ball while rubbing against the surface of the lead portion, forming a deposited layer of the same material as the bonding wire on the lead portion, and forming at the tip of the bonding wire Bonding the formed bonding balls onto the deposited layer formed on the surface of the lead portion; and after unwinding and wiring the bonding wire, mounting the bonding wire on the element mounting portion of the lead frame And a step of stitch bonding to the electrode pad of the semiconductor element formed. It is set to.

本発明の態様に係る半導体装置の製造方法は、リードフレームのリード部に予備接合用ボールを擦り付けてボンディングワイヤと同一材料の堆積層を形成し、この堆積層を介してリード部と接合用ボールとを接合しているため、接合用ボールの接合強度を高めることができる。従って、逆ボンディングを適用した半導体装置の製造歩留りや信頼性等を向上させることが可能となる。   In a method of manufacturing a semiconductor device according to an aspect of the present invention, a preliminary bonding ball is rubbed against a lead portion of a lead frame to form a deposited layer of the same material as the bonding wire, and the lead portion and the bonding ball are interposed through the deposited layer. Therefore, the bonding strength of the bonding balls can be increased. Therefore, it is possible to improve the manufacturing yield, reliability, etc. of the semiconductor device to which reverse bonding is applied.

以下、本発明を実施するための形態について、図面を参照して説明する。なお、以下では本発明の実施形態を図面に基づいて説明するが、それらの図面は図解のために提供されるものであり、本発明はそれらの図面に限定されるものではない。   Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings. In addition, although embodiment of this invention is described based on drawing below, those drawings are provided for illustration and this invention is not limited to those drawings.

図１は本発明の実施形態による製造方法を適用して作製した半導体装置の構成例を示す断面図である。同図に示す半導体装置１は、素子搭載用基材としてリードフレーム２を具備している。リードフレーム２は、半導体素子が接合搭載される素子マウント部３と、その周囲に配置されたリード部４とを有している。リード部４は素子マウント部３上に搭載された半導体素子との接続部（インナーリード部）と外部接続端子（アウターリード部）とを兼ねるものであり、複数のリードで構成されている。   FIG. 1 is a cross-sectional view showing a configuration example of a semiconductor device manufactured by applying a manufacturing method according to an embodiment of the present invention. The semiconductor device 1 shown in FIG. 1 includes a lead frame 2 as an element mounting base material. The lead frame 2 includes an element mount portion 3 to which a semiconductor element is bonded and mounted, and a lead portion 4 disposed around the element mount portion 3. The lead part 4 serves as both a connection part (inner lead part) to the semiconductor element mounted on the element mount part 3 and an external connection terminal (outer lead part), and is composed of a plurality of leads.

リードフレーム２は、例えばＣｕやＣｕ合金等からリードフレーム基材２ａと、その表面に形成されたＡｇメッキ層２ｂとを有している。このようなリードフレーム２の素子マウント部３上には、半導体素子５が接着材層６を介して接着されている。半導体素子５の上面側に設けられた電極パッド７は、ボンディングワイヤ８を介してリードフレーム２のリード部４と接続されている。ボンディングワイヤ８は逆ボンディング（リバースボンディング）を適用してリード部４および電極パッド７に接合されている。   The lead frame 2 has a lead frame base 2a made of, for example, Cu or Cu alloy, and an Ag plating layer 2b formed on the surface thereof. On the element mounting portion 3 of such a lead frame 2, the semiconductor element 5 is bonded via an adhesive layer 6. The electrode pad 7 provided on the upper surface side of the semiconductor element 5 is connected to the lead portion 4 of the lead frame 2 through the bonding wire 8. The bonding wire 8 is bonded to the lead portion 4 and the electrode pad 7 by applying reverse bonding (reverse bonding).

すなわち、ボンディングワイヤ８の一方の端部８ａは、リード部４に対してボール接合（ボールボンディング）されている。このボンディングワイヤ８のボール接合部８ａは、図１では図示を省略したボンディングワイヤ８と同一材料の堆積層（後に詳述する）を介して、リード部４表面のＡｇメッキ層２ｂと接続されている。なお、この実施形態ではリード部４表面のＡｇメッキ層２ｂ上に堆積層を形成しているが、リード部４の表面はこれに限られるものではなく、各種のメッキ層等の表面層を適用することができる。ボンディングワイヤ８と同一材料からなる堆積層は、リード部４がＡｇメッキ層２ｂのようなボール接合性に劣る表面層を有する場合に効果的である。   That is, one end portion 8 a of the bonding wire 8 is ball-bonded (ball bonded) to the lead portion 4. The ball bonding portion 8a of the bonding wire 8 is connected to the Ag plating layer 2b on the surface of the lead portion 4 through a deposited layer (described later in detail) of the bonding wire 8 (not shown in FIG. 1). Yes. In this embodiment, the deposited layer is formed on the Ag plating layer 2b on the surface of the lead part 4, but the surface of the lead part 4 is not limited to this, and a surface layer such as various plating layers is applied. can do. The deposited layer made of the same material as the bonding wire 8 is effective when the lead portion 4 has a surface layer that is inferior in ball bonding, such as the Ag plating layer 2b.

ボンディングワイヤ８の他方の端部８ｂは、リードフレーム２の素子マウント部３に実装された半導体素子５の電極パッド７に対してステッチ接合（ステッチボンディング）されている。半導体素子５の電極パッド７上には例えばＡｕバンプ９が予め形成されており、このＡｕバンプ９に対してボンディングワイヤ８がステッチ接合されている。なお、ステッチ接合部８ｂは電極パッド７に対して直接接合されていてもよい。   The other end 8 b of the bonding wire 8 is stitch-bonded (stitch bonded) to the electrode pad 7 of the semiconductor element 5 mounted on the element mounting portion 3 of the lead frame 2. For example, Au bumps 9 are formed in advance on the electrode pads 7 of the semiconductor element 5, and bonding wires 8 are stitched to the Au bumps 9. The stitch joint 8b may be directly joined to the electrode pad 7.

そして、リード部４の素子接続側（インナーリード部）を含めて半導体素子５を、例えばエポキシ樹脂のような封止樹脂１０を用いて封止することによって、リードフレーム２を用いた半導体装置１が構成されている。なお、図１では1個の半導体素子５をリードフレーム２の素子マウント部３上に実装した構造について説明したが、半導体素子の実装数はこれに限られるものではない。素子マウント部３上には複数個（2個もしくはそれ以上）の半導体素子を積層して実装することができ、そのようなスタック型マルチチップパッケージに対しても本発明は適用可能である。   The semiconductor device 1 including the lead frame 2 is sealed by sealing the semiconductor element 5 including the element connection side (inner lead portion) of the lead portion 4 with a sealing resin 10 such as an epoxy resin. Is configured. Although the structure in which one semiconductor element 5 is mounted on the element mounting portion 3 of the lead frame 2 has been described with reference to FIG. 1, the number of semiconductor elements mounted is not limited to this. A plurality (two or more) of semiconductor elements can be stacked and mounted on the element mount portion 3, and the present invention can be applied to such a stacked multichip package.

上述した実施形態の半導体装置１は、例えば以下のようにして作製される。まず、リードフレーム２の素子マウント部３上に接着材層６を用いて半導体素子５を接着する。続いて逆ボンディング工程を実施して、ボンディングワイヤ８でリードフレーム２のリード部４と半導体素子５の電極パッド７とを電気的に接続する。この逆ボンディング工程について以下に詳述する。ここでは本発明の一実施形態による半導体装置の製造方法を適用した逆ボンディング工程について図２および図３を参照して説明する。   The semiconductor device 1 according to the above-described embodiment is manufactured as follows, for example. First, the semiconductor element 5 is bonded onto the element mount portion 3 of the lead frame 2 using the adhesive layer 6. Subsequently, a reverse bonding process is performed to electrically connect the lead portion 4 of the lead frame 2 and the electrode pad 7 of the semiconductor element 5 with the bonding wire 8. This reverse bonding process will be described in detail below. Here, the reverse bonding process to which the semiconductor device manufacturing method according to an embodiment of the present invention is applied will be described with reference to FIGS.

ボンディングワイヤ８による逆ボンディング工程を実施する前に、ボンディング用のワイヤの先端に形成された予備接合用ボールを用いて、ワイヤと同一材料からなる堆積層を形成する。ボンディング用のワイヤとしてＡｕ線を使用する場合には、その先端に予備接合用Ａｕボールを形成し、この予備接合用Ａｕボールを用いてＡｕの堆積層を形成する。Ａｕ堆積層の形成工程について、図２を参照して説明する。   Before the reverse bonding process using the bonding wire 8 is performed, a deposited layer made of the same material as the wire is formed using a pre-bonding ball formed at the tip of the bonding wire. When an Au wire is used as a bonding wire, a preliminary bonding Au ball is formed at the tip, and an Au deposition layer is formed using the preliminary bonding Au ball. The Au deposition layer forming process will be described with reference to FIG.

図２（ａ）に示すように、キャピラリ１１に支持されたＡｕワイヤ１２の先端に、予備接合用のＡｕボール１３を形成する。次いで、図２（ｂ）に示すように、キャピラリ１１を下降させて予備接合用Ａｕボール１３をリード部４表面のＡｇメッキ層２ｂに接触させ、さらに予備接合用Ａｕボール１３に荷重を加えて圧接する。   As shown in FIG. 2A, an Au ball 13 for preliminary bonding is formed at the tip of the Au wire 12 supported by the capillary 11. Next, as shown in FIG. 2 (b), the capillary 11 is lowered to bring the preliminary bonding Au balls 13 into contact with the Ag plating layer 2 b on the surface of the lead portion 4, and a load is applied to the preliminary bonding Au balls 13. Press contact.

ここで、通常のワイヤボンディングにおけるボール接合工程では、例えば数10mNから数100mN前後の荷重を加えながら超音波振動を印加することによって、Ａｕボールの接合強度を高めている。これに対して、予備接合用Ａｕボール１３の圧接工程は、Ａｕボール１３を変形させる程度の荷重を加える必要があるものの、あまり接合性が向上しないように条件を設定する。具体的には、Ａｕボール１３に加える荷重や超音波を、後述する接合用Ａｕボール（ボール接合部８ａを形成するＡｕボール）の接合時より低減する。超音波については印加せずに予備接合用Ａｕボール１３の接合を実施してもよい。   Here, in the ball bonding step in normal wire bonding, for example, the bonding strength of the Au ball is increased by applying ultrasonic vibration while applying a load of several tens mN to several hundreds mN. On the other hand, in the pressure welding process of the pre-joining Au balls 13, although it is necessary to apply a load to the extent that the Au balls 13 are deformed, conditions are set so that the joining performance is not improved so much. Specifically, the load applied to the Au ball 13 and the ultrasonic wave are reduced compared to the case of bonding a Au ball for bonding (Au ball forming the ball bonding portion 8a) described later. The joining of the pre-joining Au balls 13 may be performed without applying ultrasonic waves.

上述したように、予備接合用Ａｕボール１３に加える荷重や超音波を低減することによって、予備接合用Ａｕボール１３の圧接後の厚さを厚くする。具体的には、予備接合用Ａｕボール１３の圧接後の厚さｈ1が、後述する接合用Ａｕボールの圧着後の厚さＨより厚くなる（ｈ1＞Ｈ）ように、予備接合用Ａｕボール１３に加える荷重や超音波出力を制御する。これら荷重および超音波の印加条件はいずれか一方のみを制御するようにしてもよい。このように、予備接合用Ａｕボール１３は荷重や超音波出力等を制御することによって、リード部４のＡｇメッキ層２ｂに対してボール底部（変形により生じた底部）が密着する程度の接合性を維持して圧接される。   As described above, by reducing the load and ultrasonic waves applied to the pre-joining Au balls 13, the thickness of the pre-joining Au balls 13 after press contact is increased. Specifically, the pre-joining Au ball 13 so that the thickness h1 after the pressure welding of the pre-joining Au ball 13 becomes thicker than the thickness H after the press-bonding of the joining Au ball described later (h1> H). To control the load and ultrasonic power applied. Only one of these load and ultrasonic wave application conditions may be controlled. As described above, the pre-joining Au ball 13 has a bonding property such that the ball bottom portion (bottom portion generated by deformation) is in close contact with the Ag plating layer 2b of the lead portion 4 by controlling the load, ultrasonic output, and the like. Is kept in pressure contact.

次に、図２（ｃ）に示すように、予備接合用Ａｕボール１３への加圧状態（例えば低荷重での加圧状態）を維持しつつ、キャピラリ１１をリード部４の表面に沿って移動させる。このキャピラリ１１の水平移動に伴って、予備接合用Ａｕボール１３をリード部４のＡｇメッキ層２ｂに擦り付けながら移動させる。予備接合用Ａｕボール１３の移動距離は、例えば数10μmから数100μm程度でよい。Ａｇメッキ層２ｂの表面には微細な凹凸が存在するため、予備接合用Ａｕボール１３はＡｇメッキ層２ｂに徐々に削り取られて体積（厚さ）が減少し、キャピラリ１１の移動を停止した位置では予備接合用Ａｕボール１３の厚さｈ2が当初の厚さｈ1より薄くなる（ｈ1＞ｈ2）。   Next, as shown in FIG. 2 (c), the capillary 11 is moved along the surface of the lead portion 4 while maintaining a pressure state (for example, a pressure state at a low load) to the pre-joining Au ball 13. Move. As the capillary 11 moves horizontally, the pre-joining Au ball 13 is moved while being rubbed against the Ag plating layer 2b of the lead portion 4. The movement distance of the pre-joining Au ball 13 may be, for example, about several tens of μm to several hundreds of μm. Since there are fine irregularities on the surface of the Ag plating layer 2b, the pre-joining Au balls 13 are gradually scraped off by the Ag plating layer 2b to reduce the volume (thickness) and stop the movement of the capillary 11 Then, the thickness h2 of the pre-joining Au ball 13 is smaller than the initial thickness h1 (h1> h2).

このように、予備接合用Ａｕボール１３をリード部４のＡｇメッキ層２ｂに擦り付けながら移動させることによって、Ａｇメッキ層２ｂ上にＡｕの堆積層１４を形成する。このＡｕ堆積層１４はＡｇメッキ層２ｂの表面凹凸でＡｕボール１３を徐々に削り取って堆積させたものであるため、Ａｇメッキ層２ｂに対してアンカー効果を示す機械的な接合形態を有している。従って、Ａｕ堆積層１４は通常のＡｕ／Ａｇ間の拡散接合に比べて、Ａｇメッキ層２ｂに対する接合強度をアンカー効果等に基づいて高めることができる。すなわち、Ａｇメッキ層２に対する接合強度を高めたＡｕ層（Ａｕ堆積層１４）を、Ａｕメッキのような高コストの工程を適用することなく容易に得ることができる。   In this way, the Au deposition layer 14 is formed on the Ag plating layer 2b by moving the pre-joining Au balls 13 while rubbing against the Ag plating layer 2b of the lead portion 4. Since this Au deposited layer 14 is formed by gradually scraping and depositing the Au balls 13 with the surface irregularities of the Ag plated layer 2b, it has a mechanical joining form showing an anchor effect with respect to the Ag plated layer 2b. Yes. Therefore, the Au deposition layer 14 can increase the bonding strength with respect to the Ag plating layer 2b based on the anchor effect or the like as compared with the normal diffusion bonding between Au / Ag. That is, it is possible to easily obtain an Au layer (Au deposition layer 14) with increased bonding strength with respect to the Ag plating layer 2 without applying an expensive process such as Au plating.

Ａｕ堆積層１４の厚さはＡｇメッキ層２ｂの表面がＡｕで覆われた状態を実現できればよく、数μm（例えば1〜3μm）程度の厚さを有していればよい。また、Ａｕ堆積層１４は必ずしもＡｇメッキ層２ｂの表面を均一に覆わなければならないものではなく、後述する接合用Ａｕボールに対する接合層としての機能を維持し得る範囲内で、部分的にＡｕを堆積させたもの（部分的に途切れたＡｕ堆積層１４）であってもよい。Ａｕ堆積層１４の長さは上述したように数10μmから数100μm程度あればよく、接合用Ａｕボールの圧着領域を確保することが可能な長さを有していればよい。   The thickness of the Au deposition layer 14 is only required to realize a state in which the surface of the Ag plating layer 2b is covered with Au, and may have a thickness of about several μm (for example, 1 to 3 μm). Further, the Au deposition layer 14 does not necessarily have to uniformly cover the surface of the Ag plating layer 2b, and Au is partially applied within a range in which a function as a bonding layer for a bonding Au ball described later can be maintained. It may be deposited (a partially interrupted Au deposition layer 14). As described above, the Au deposited layer 14 may have a length of about several tens of μm to several hundreds of μm as long as it can secure a pressure-bonding region of the bonding Au ball.

予備接合用Ａｕボール１３に対する加圧条件や移動条件は、キャピラリ１１の停止位置にＡｕボール１３の一部が残るように設定することが好ましい。そして、図２（ｄ）に示すように、移動停止位置に残存したＡｕボール１３に通常のボール接合に準じた荷重と超音波を印加してＡｕバンプ１３ａを形成した後、図示を省略したクランパでＡｕワイヤ１２をクランプした状態でキャピラリ１１を上昇させてＡｕワイヤ１２を切断する。Ａｕバンプ１３ａは移動停止位置に残存するが、逆ボンディング工程やその後の工程に悪影響を及ぼすこともないため、そのままの状態で残置しておいてよい。   It is preferable that the pressurizing condition and the moving condition for the pre-joining Au ball 13 are set so that a part of the Au ball 13 remains at the stop position of the capillary 11. Then, as shown in FIG. 2 (d), a Au bump 13a is formed by applying a load and ultrasonic waves according to normal ball bonding to the Au ball 13 remaining at the movement stop position, and then a clamper not shown. With the Au wire 12 clamped, the capillary 11 is raised and the Au wire 12 is cut. Although the Au bump 13a remains at the movement stop position, the Au bump 13a may be left as it is because it does not adversely affect the reverse bonding process and subsequent processes.

次に、Ａｇメッキ層２ｂ上にＡｕ堆積層１４を形成したリード部４に対して通常の逆ボンディング工程を実施して、リード部４と半導体素子５の電極パッド７との間をボンディングワイヤ８で電気的に接続する。ボンディングワイヤ８による接続工程について、図３を参照して説明する。まず、Ａｕ堆積層１４の形成工程が終了したＡｕワイヤ１２の先端に接合用Ａｕボール１５を形成した後、図３（ａ）に示すように接合用Ａｕボール１５をリード部４のＡｕ堆積層１４上に圧着する。Ａｕボール１５の接合工程は、通常のボール接合工程と同様に荷重と超音波を加えて実施する。   Next, a normal reverse bonding process is performed on the lead portion 4 in which the Au deposition layer 14 is formed on the Ag plating layer 2 b, and the bonding wire 8 is formed between the lead portion 4 and the electrode pad 7 of the semiconductor element 5. Connect it electrically. A connection process using the bonding wires 8 will be described with reference to FIG. First, a bonding Au ball 15 is formed at the tip of the Au wire 12 where the formation process of the Au deposition layer 14 has been completed, and then the bonding Au ball 15 is replaced with the Au deposition layer of the lead portion 4 as shown in FIG. Crimp onto 14. The Au ball 15 bonding step is performed by applying a load and ultrasonic waves in the same manner as a normal ball bonding step.

リード部４に対するＡｕボール１５の接合工程において、Ａｕボール１５はＡｕ堆積層１４上に圧着されているため、それらの界面での接合形態はＡｕ／Ａｕ間の拡散接合となる。従って、Ａｇメッキ層２ｂとＡｕボール１５とによるＡｇ／Ａｕ間の拡散接合に比べて接合性を高めることができるため、例えばＡｕボール１５の圧着後のボール径（潰れ径）を大きくすることなく、Ａｕボール１５をリード部４に対して良好に接合することができる。すなわち、Ａｕボール１５の潰れ径や厚さ等を変更することなく、リード部４に対するＡｕボール１５の接合強度を高めることが可能となる。   In the bonding process of the Au ball 15 to the lead part 4, since the Au ball 15 is pressure-bonded on the Au deposition layer 14, the bonding form at the interface is diffusion bonding between Au / Au. Therefore, since it is possible to improve the bondability compared to the diffusion bonding between Ag / Au by the Ag plating layer 2b and the Au ball 15, for example, without increasing the ball diameter (collapse diameter) after the Au ball 15 is pressed. The Au ball 15 can be satisfactorily bonded to the lead portion 4. That is, it is possible to increase the bonding strength of the Au ball 15 to the lead portion 4 without changing the collapse diameter, thickness, etc. of the Au ball 15.

続いて、図３（ｂ）に示すように、Ａｕワイヤ１２を繰り出してワイヤリングしつつ、キャピラリ１１を所定の位置まで移動させる。図３では図示を省略したが、キャピラリ１１は半導体素子５の電極パッド７の上方まで移動させる。なお、電極パッド７上には必要に応じてＡｕバンプ９を形成しておく。そして、Ａｕワイヤ１２を電極パッド７（予めＡｕバンプ９を形成しておいた場合にはＡｕバンプ９）に対してステッチ接合（ステッチボンディング）する。ステッチ接合は通常と同様に荷重と超音波を加えて実施する。この後、図示を省略したクランパでＡｕワイヤ１２をクランプした状態で引き上げて切断することによって、逆ボンディングによるボンディングワイヤ８を形成する。   Subsequently, as shown in FIG. 3B, the capillary 11 is moved to a predetermined position while the Au wire 12 is fed and wired. Although not shown in FIG. 3, the capillary 11 is moved to above the electrode pad 7 of the semiconductor element 5. An Au bump 9 is formed on the electrode pad 7 as necessary. Then, the Au wire 12 is stitch-bonded (stitch bonded) to the electrode pad 7 (or the Au bump 9 if the Au bump 9 has been formed in advance). Stitch bonding is performed by applying a load and ultrasonic waves as usual. Thereafter, the Au wire 12 is lifted and cut in a state where the Au wire 12 is clamped by a clamper (not shown), thereby forming the bonding wire 8 by reverse bonding.

上述した実施形態による半導体装置１の製造方法においては、逆ボンディング工程の前工程としてリード部４の表面にＡｕ堆積層１４を形成しているため、Ａｇメッキ層２ｂを有するリード部４に対するＡｕワイヤ１２（ボンディングワイヤ８）のボール接合性を高めることができる。このＡｕワイヤ１２のボール接合性の向上効果は、Ａｕボール１５の潰れ径等を通常の接合条件より増大させることなく得ることができる。また、Ａｕ堆積層１４の形成工程は、逆ボンディング工程の前工程としてボンディング装置内で実施することができるため、Ａｕメッキのように製造コストの大幅な増大を招くこともない。   In the manufacturing method of the semiconductor device 1 according to the above-described embodiment, the Au deposited layer 14 is formed on the surface of the lead part 4 as a pre-process of the reverse bonding process. Therefore, the Au wire for the lead part 4 having the Ag plating layer 2b is formed. The ball bondability of 12 (bonding wire 8) can be improved. The effect of improving the ball bondability of the Au wire 12 can be obtained without increasing the crushed diameter of the Au ball 15 or the like from the normal bonding conditions. Moreover, since the formation process of the Au deposition layer 14 can be performed in the bonding apparatus as a pre-process of the reverse bonding process, it does not cause a significant increase in manufacturing cost unlike Au plating.

従って、例えばファインピッチ化されたリード部４に対しても、圧着後のＡｕボール１５（ボール接合部８ａ）の品質低下や製造コストの増大等を招くことなく、健全な接合強度でＡｕワイヤ１２（ボンディングワイヤ８）をボール接合することが可能となる。また、半導体素子５の大型化に伴ってリード部４の押え治具を使用することができず、超音波が下方に逃げるような場合においても、Ａｕワイヤ１２（ボンディングワイヤ８）を良好にボール接合することができる。これらによって、各種形状の半導体装置１の製造歩留りや信頼性等を高めることが可能となる。   Therefore, for example, even with respect to the fine pitched lead portion 4, the Au wire 12 can be obtained with a sound joint strength without causing deterioration of the quality of the Au ball 15 (ball joint portion 8a) after press bonding or an increase in manufacturing cost. (Bonding wire 8) can be ball-bonded. Even when the holding jig of the lead part 4 cannot be used with the increase in size of the semiconductor element 5 and the ultrasonic wave escapes downward, the Au wire 12 (bonding wire 8) can be satisfactorily Can be joined. By these, it becomes possible to improve the manufacturing yield, reliability, etc. of the semiconductor device 1 of various shapes.

なお、上記した実施形態ではリード部表面のＡｇメッキ層上にＡｕ堆積層を形成した例について説明したが、リード部表面はＡｇメッキ層に限られるものではなく、またリード部上に形成する堆積層も必ずしもＡｕ堆積層に限られるものではない。リード部の表面にボンディングワイヤと同一材料からなる堆積層を形成することによって、ボンディングワイヤのボール接合性を高めることができる。   In the above-described embodiment, the example in which the Au deposition layer is formed on the Ag plating layer on the surface of the lead portion has been described. However, the lead portion surface is not limited to the Ag plating layer, and the deposition formed on the lead portion is also described. The layer is not necessarily limited to the Au deposited layer. By forming a deposited layer made of the same material as the bonding wire on the surface of the lead portion, the ball bonding property of the bonding wire can be improved.

本発明は逆ボンディングを適用した各種の半導体装置の製造工程に適用することができる。また、半導体装置の構成も特に限定されるものではなく、例えば複数の半導体素子を積層して構成した半導体装置の製造工程等にも適用可能である。さらに、本発明の実施形態は本発明の技術的思想の範囲内で拡張もしくは変更することができ、この拡張、変更した実施形態も本発明の技術的範囲に含まれるものである。   The present invention can be applied to manufacturing processes of various semiconductor devices to which reverse bonding is applied. Further, the configuration of the semiconductor device is not particularly limited, and can be applied to, for example, a manufacturing process of a semiconductor device configured by stacking a plurality of semiconductor elements. Furthermore, the embodiments of the present invention can be expanded or modified within the scope of the technical idea of the present invention, and these expanded and modified embodiments are also included in the technical scope of the present invention.

本発明の実施形態による製造方法を適用して作製した半導体装置の構成を示す図である。It is a figure which shows the structure of the semiconductor device produced by applying the manufacturing method by embodiment of this invention. 図１に示す半導体装置の製造工程を示す図であって、逆ボンディング工程の前工程としてのＡｕ堆積層の形成工程を示す断面図である。It is a figure which shows the manufacturing process of the semiconductor device shown in FIG. 1, Comprising: It is sectional drawing which shows the formation process of Au deposition layer as a pre-process of a reverse bonding process. 図１に示す半導体装置の製造工程を示す図であって、逆ボンディング工程を示す断面図である。It is a figure which shows the manufacturing process of the semiconductor device shown in FIG. 1, Comprising: It is sectional drawing which shows a reverse bonding process.

符号の説明Explanation of symbols

１…半導体装置、２…リードフレーム、２ａ…リードフレーム基材、２ｂ…Ａｇメッキ層、３…素子マウント部、４…リード部、５…半導体素子、６…接着材層、７…電極パッド、８…ボンディングワイヤ、８ａ…ボール接合部、８ｂ…ステッチ接合部、１１…キャピラリ、１２…Ａｕワイヤ、１３…予備接合用Ａｕボール、１３ａ…Ａｕバンプ、１４…Ａｕ堆積層、１５…接合用Ａｕボール。   DESCRIPTION OF SYMBOLS 1 ... Semiconductor device, 2 ... Lead frame, 2a ... Lead frame base material, 2b ... Ag plating layer, 3 ... Element mounting part, 4 ... Lead part, 5 ... Semiconductor element, 6 ... Adhesive material layer, 7 ... Electrode pad, DESCRIPTION OF SYMBOLS 8 ... Bonding wire, 8a ... Ball joining part, 8b ... Stitch joining part, 11 ... Capillary, 12 ... Au wire, 13 ... Au ball for preliminary joining, 13a ... Au bump, 14 ... Au deposition layer, 15 ... Au for joining ball.

Claims (5)

リードフレーム上に半導体素子を実装して半導体装置を製造するにあたり、
前記リードフレームのリード部に、ボンディングワイヤの先端に形成された予備接合用ボールを圧接する工程と、
前記予備接合用ボールを前記リード部の表面に擦り付けながら移動させ、前記ボンディングワイヤと同一材料の堆積層を前記リード部上に形成する工程と、
前記ボンディングワイヤの先端に形成された接合用ボールを、前記リード部の表面に形成された前記堆積層上にボール接合する工程と、
前記ボンディングワイヤを繰り出してワイヤリングした後、前記ボンディングワイヤを前記リードフレームの素子マウント部に実装された前記半導体素子の電極パッドにステッチ接合する工程と
を具備することを特徴とする半導体装置の製造方法。 In manufacturing a semiconductor device by mounting a semiconductor element on a lead frame,
A step of press-contacting a pre-bonding ball formed at the tip of a bonding wire to the lead portion of the lead frame;
Moving the preliminary bonding ball while rubbing against the surface of the lead portion, and forming a deposited layer of the same material as the bonding wire on the lead portion;
Bonding the ball for bonding formed at the tip of the bonding wire onto the deposited layer formed on the surface of the lead portion; and
And a step of stitching the bonding wire to the electrode pad of the semiconductor element mounted on the element mounting portion of the lead frame after the bonding wire is drawn out and wired. . 請求項１記載の半導体装置の製造方法において、
前記予備接合用ボールを、その圧接後の厚さが前記接合用ボールの接合後の厚さより厚くなるように、前記リード部に圧接することを特徴とする半導体装置の製造方法。 In the manufacturing method of the semiconductor device according to claim 1,
A method of manufacturing a semiconductor device, wherein the pre-bonding ball is press-contacted to the lead portion so that a thickness after the press-contact is greater than a thickness after the bonding of the bonding ball. 請求項２記載の半導体装置の製造方法において、
前記予備接合用ボールに加える荷重および超音波の少なくとも一方を、前記予備接合用ボールの変形量に応じて制御することを特徴とする半導体装置の製造方法。 The method of manufacturing a semiconductor device according to claim 2.
A method of manufacturing a semiconductor device, wherein at least one of a load and an ultrasonic wave applied to the preliminary bonding ball is controlled according to a deformation amount of the preliminary bonding ball. 請求項２または請求項３記載の半導体装置の製造方法において、
前記予備接合用ボールに加える荷重および超音波の少なくとも一方を、前記接合用ボールの接合時における荷重および超音波より小さくすることを特徴とする半導体装置の製造方法。 In the manufacturing method of the semiconductor device of Claim 2 or Claim 3,
A method of manufacturing a semiconductor device, wherein at least one of a load and an ultrasonic wave applied to the preliminary bonding ball is made smaller than a load and an ultrasonic wave when the bonding ball is bonded. 請求項１ないし請求項４のいずれか１項記載の半導体装置の製造方法において、
前記ボンディングワイヤはＡｕ線であり、前記Ａｕ線の先端に形成された前記予備接合用ボールを前記リード部に形成されたＡｇメッキ層上に圧接することを特徴とする半導体装置の製造方法。 In the manufacturing method of the semiconductor device of any one of Claims 1 thru | or 4,
The manufacturing method of a semiconductor device, wherein the bonding wire is an Au wire, and the preliminary bonding ball formed at the tip of the Au wire is pressed onto an Ag plating layer formed on the lead portion.
JP2006263815A 2006-09-28 2006-09-28 Manufacturing method of semiconductor device Withdrawn JP2008085094A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017117832A (en) * 2015-12-21 2017-06-29 トヨタ自動車株式会社 Copper wire joining method
CN112437974A (en) * 2018-06-06 2021-03-02 德州仪器公司 Ball bond attachment of semiconductor die

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017117832A (en) * 2015-12-21 2017-06-29 トヨタ自動車株式会社 Copper wire joining method
CN112437974A (en) * 2018-06-06 2021-03-02 德州仪器公司 Ball bond attachment of semiconductor die

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