JP2010103542A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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JP2010103542A
JP2010103542A JP2009250069A JP2009250069A JP2010103542A JP 2010103542 A JP2010103542 A JP 2010103542A JP 2009250069 A JP2009250069 A JP 2009250069A JP 2009250069 A JP2009250069 A JP 2009250069A JP 2010103542 A JP2010103542 A JP 2010103542A
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capillary
wire
bond point
ball
lead
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JP4616924B2 (en
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Tatsunari Mitsui
竜成 三井
Shinkai Tei
森介 鄭
Itsuto Kiuchi
逸人 木内
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Shinkawa Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/85951—Forming additional members, e.g. for reinforcing
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
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    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a low wire loop. <P>SOLUTION: In the semiconductor device, an initial ball is joined to a pad 13 to form a bonding ball 23 and a ball neck 25, and then a capillary 41 is raised for moving in a direction opposite to that of a lead 17 and then is lowered to stamp down the ball neck 25 by a face section 43 at the side of the lead. After that, the capillary 41 is raised and is moved toward the lead until the face section 43 of the capillary 41 is on the ball neck 25, and a wire 21 is folded toward the lead 17. Then, the capillary 41 is lowered to press the side of the wire folded on the ball neck 25 by the capillary 41, and the capillary 41 is moved obliquely upward toward the lead before looping to crimp the wire 21 to the lead. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、第１ボンド点と第２ボンド点とをワイヤで接続するワイヤループ形状を有する半導体装置に関する。   The present invention relates to a semiconductor device having a wire loop shape in which a first bond point and a second bond point are connected by a wire.

半導体装置の組立には、リードフレームに取り付けられた半導体チップのパッドとリードフレームのリードとの間を金属の細線で接続するワイヤボンディングが用いられている。ワイヤボンディングはワイヤボンディング装置を用い、最初にワイヤ先端にイニシャルボールを形成し、キャピラリによってそのイニシャルボールを半導体チップのパッドに圧着させて圧着ボールを形成する。そして、キャピラリを上昇させて第２ボンド点と反対側に向かってリバース動作させた後、更にキャピラリを所定の高さまで上昇させてからキャピラリを第２ボンド点の方向に移動させて第２ボンド点にワイヤを接続する方法が用いられている（例えば、特許文献１の図４から図６参照）。   For assembling a semiconductor device, wire bonding is used to connect a pad of a semiconductor chip attached to the lead frame and a lead of the lead frame with a thin metal wire. For wire bonding, an initial ball is first formed at the tip of the wire using a wire bonding apparatus, and the initial ball is pressed against a pad of a semiconductor chip by a capillary to form a pressed ball. Then, after raising the capillary and performing a reverse operation toward the opposite side of the second bond point, the capillary is further raised to a predetermined height, and then the capillary is moved in the direction of the second bond point. A method of connecting wires to the wire is used (see, for example, FIGS. 4 to 6 of Patent Document 1).

このように、キャピラリを動作させてワイヤをボンディングし、ワイヤループの形状を半導体チップのパッドに圧着した圧着ボールから上に伸びるワイヤネックと、ワイヤネックから第２ボンド点に向かって折り曲げられた傾斜部分とを含む三角形状或いは、ワイヤネックから第２ボンド点に向かって略水平に伸びる水平部分と水平部分から第２ボンド点に向かって伸びる傾斜部分とを含む台形形状とすることが多かった。これは、圧着ボールに近い部分を第２ボンド点に向かってキャピラリの水平方向に移動させると、移動中に発生するキャピラリと金属細線との間で発生する摩擦によりネック部分にダメージを与えてしまう場合があるためである。   In this way, the wire is bonded by operating the capillary, and the wire neck extends upward from the press-bonded ball that is press-bonded to the pad of the semiconductor chip, and the inclination that is bent from the wire neck toward the second bond point. In many cases, a triangular shape including a portion or a trapezoidal shape including a horizontal portion extending substantially horizontally from the wire neck toward the second bond point and an inclined portion extending from the horizontal portion toward the second bond point. This is because if the portion close to the press-bonded ball is moved in the horizontal direction of the capillary toward the second bond point, the neck portion is damaged due to the friction generated between the capillary and the fine metal wire during the movement. This is because there are cases.

しかし、このワイヤループ形状は、圧着ボールから上方に立ち上がったワイヤネックを含むため、ワイヤループの高さが高くなってしまい、ワイヤボンディングによって組み立てられた半導体装置全体の高さ或いは厚さを小さく出来ないという問題があった。   However, since this wire loop shape includes a wire neck that rises upward from the press-bonded ball, the height of the wire loop increases, and the overall height or thickness of the semiconductor device assembled by wire bonding can be reduced. There was no problem.

そこで、第１ボンド点にボンディングした後、キャピラリを若干上昇させて第２ボンド点と反対側に動かすリバース動作を行い、更にキャピラリを若干上昇させて第２ボンド点側に動かすフォワード動作させた後、キャピラリを降下させてワイヤネック部分を圧着ボールの上に折り返して押し付け、ワイヤの伸びる方向を水平或いは水平よりも若干上方向に向いた位置とした後、キャピラリの先端からワイヤを繰り出しながらキャピラリを上昇させ、続いてキャピラリを第２ボンド点に移動させてワイヤを第２ボンド点に接続する方法が提案されている（例えば、特許文献１の図１から図３または特許文献２の図１から図３参照）。   Therefore, after bonding to the first bond point, a reverse operation is performed in which the capillary is slightly raised and moved to the opposite side of the second bond point, and further, a forward operation is performed in which the capillary is slightly raised and moved to the second bond point side. After lowering the capillary and folding the wire neck onto the pressure-bonding ball and pressing it, the wire extending direction is set to be horizontal or slightly upward from the horizontal, and then the capillary is pulled out while feeding the wire from the tip of the capillary. A method has been proposed in which the wire is connected to the second bond point by moving the capillary up to the second bond point (for example, from FIG. 1 to FIG. 3 of Patent Document 1 or FIG. 1 of Patent Document 2). (See FIG. 3).

特開２００４−１７２４７７号公報JP 2004-172477 A 特開平９−５１０１１号公報JP-A-9-51011

特許文献１または２に記載された従来技術によるボンディング方法では、圧着ボールの上にワイヤを折り返してからワイヤを押し付けてヘッド部分を形成するため、ヘッド部分の高さがさほど低くならず、全体のワイヤループ高さをより低くするという要求に対応することが出来ない場合があった。   In the bonding method according to the prior art described in Patent Document 1 or 2, since the head is formed by folding the wire onto the press-bonded ball and then pressing the wire, the height of the head is not reduced so much. In some cases, the request to lower the wire loop height could not be met.

そこで、本発明は、第１ボンド点と第２ボンド点との接続において、ワイヤループの高さをより低くすることを目的とする。   Accordingly, an object of the present invention is to lower the height of the wire loop in the connection between the first bond point and the second bond point.

本発明の半導体装置は、第１ボンド点と第２ボンド点との間をワイヤで接続するワイヤループ形状を有する半導体装置であって、前記ワイヤの先端に形成したイニシャルボールをキャピラリによって前記第１ボンド点に接合させて形成された圧着ボールとボールネックと、前記ボールネックの上に折り返され、前記圧着ボールの直径よりはみ出さない押し付け部と、前記押し付け部と前記第２ボンド点との間の前記ワイヤと、前記ワイヤと前記第２ボンド点との接合部とを含み、前記ボールネックは、前記イニシャルボールを前記キャピラリによって前記第１ボンド点に接合させた後、前記キャピラリを上昇させ、続いて前記キャピラリを前記第２ボンド点と反対の方向に向かって移動させた後、前記キャピラリを降下させて前記キャピラリの前記第２ボンド点側の第１のフェイス部で前記第２ボンド点側の前記ボールネックの一部が踏み付けられて形成された平面を有し、前記押し付け部は、前記キャピラリを降下させて前記第２ボンド点側の前記ボールネックの前記一部をその表面が平面状になるまで踏み付けた後、前記キャピラリを上昇させ、続いて前記キャピラリの前記第２ボンド点と反対側の第２のフェイス部が前記ボールネックの上に来るまで前記キャピラリを前記第２ボンド点に向かって移動させて前記第２ボンド点に向かって前記ワイヤを折り返し、その後前記キャピラリを降下させて踏み付けられて平面状となった前記ボールネックの前記一部の上に前記ワイヤを折り返し、前記ワイヤの側面を前記キャピラリの前記第２ボンド点と反対側の前記第２のフェイス部で押し付けて形成され、前記押し付け部と前記第２ボンド点との間の前記ワイヤは、前記ワイヤの前記側面を前記キャピラリの前記第２ボンド点と反対側の前記第２のフェイス部で押し付けた後、前記キャピラリを前記第２ボンド点に向かって斜め上方に移動させ、その後前記キャピラリを上昇させ、続いてキャピラリを第２ボンド点と反対側に移動させるリバース動作を少なくとも１回行い、その後更にキャピラリを上昇させ、前記キャピラリを前記第２ボンド点の方向に移動させることにより形成される下に凸の湾曲部と前記下に凸の湾曲部の前記第２ボンド点側の上に凸の屈曲部とを含み、前記ワイヤと前記第２ボンド点との接合部は、前記キャピラリを更に前記第２ボンド点に移動させて前記ワイヤを前記第２ボンド点に圧着させて接合することにより形成されていること、を特徴とする。   The semiconductor device of the present invention is a semiconductor device having a wire loop shape in which a wire is connected between a first bond point and a second bond point, and an initial ball formed at the tip of the wire is formed by the capillary with the first ball. A press-bonded ball and a ball neck formed by bonding to a bond point, a pressing portion that is folded back on the ball neck and does not protrude from the diameter of the press-bonded ball, and between the pressing portion and the second bond point The wire, and a joint between the wire and the second bond point, and the ball neck raises the capillary after the initial ball is joined to the first bond point by the capillary, Subsequently, the capillary is moved in the direction opposite to the second bond point, and then the capillary is lowered to move the capillary The first face portion on the second bond point side has a plane formed by stepping a part of the ball neck on the second bond point side, and the pressing portion lowers the capillary to lower the capillary The part of the ball neck on the second bond point side is stepped on until the surface becomes flat, then the capillary is raised, and then the second face of the capillary on the opposite side of the second bond point The capillary is moved toward the second bond point until the portion is on the ball neck, the wire is folded back toward the second bond point, and then the capillary is lowered and stepped on to form a flat shape. The wire is folded over the part of the ball neck that has become, and the side of the wire is turned to the second face opposite to the second bond point of the capillary. The wire between the pressing portion and the second bond point presses the side surface of the wire with the second face portion opposite to the second bond point of the capillary. Thereafter, the capillary is moved obliquely upward toward the second bond point, then the capillary is raised, and then a reverse operation is performed at least once to move the capillary to the opposite side of the second bond point, and then further A downwardly convex curved portion formed by raising the capillary and moving the capillary in the direction of the second bond point and a convex bend on the second bond point side of the downward convex curved portion A bonding portion between the wire and the second bond point by further moving the capillary to the second bond point and crimping the wire to the second bond point. It is formed by joining.

本発明は、第１ボンド点と第２ボンド点との接続において、ワイヤループの高さをより低くすることが出来るという効果を奏する。   The present invention has an effect that the height of the wire loop can be further reduced in the connection between the first bond point and the second bond point.

本発明の実施形態における半導体装置を組み立てるワイヤボンディングの踏み付け工程と押し付け工程とを示す説明図である。It is explanatory drawing which shows the step of a wire bonding which assembles the semiconductor device in embodiment of this invention, and a pressing process. 本発明の実施形態における半導体装置を組み立てるワイヤボンディングのキンク形成工程と第２ボンディング工程と本発明の実施形態のワイヤループとを示す説明図である。It is explanatory drawing which shows the kink formation process of a wire bonding which assembles the semiconductor device in embodiment of this invention, a 2nd bonding process, and the wire loop of embodiment of this invention. 本発明の実施形態における半導体装置を組み立てるワイヤボンディングのキャピラリ先端の移動を示す説明図である。It is explanatory drawing which shows the movement of the capillary tip of the wire bonding which assembles the semiconductor device in embodiment of this invention. 本発明の他の実施形態における半導体装置を組み立てるワイヤボンディングの踏み付け工程を示す説明図である。It is explanatory drawing which shows the step of the wire bonding which assembles the semiconductor device in other embodiments of the present invention. 本発明の他の実施形態における半導体装置を組み立てるワイヤボンディングのキャピラリ先端の移動を示す説明図である。It is explanatory drawing which shows the movement of the capillary tip of the wire bonding which assembles the semiconductor device in other embodiment of this invention.

以下、図１から図３を参照しながら本発明の半導体装置の好適な実施形態について説明する。図１、２に示すように、本実施形態の半導体装置は、リードフレーム１２の上に取り付けられた半導体チップ１１のパッド１３とリードフレーム１２の上に形成されたリード１７とをワイヤループ２０によって接続する半導体装置である。半導体装置には複数のパッド１３とリード１７とを接続するワイヤループ２０が形成されるが、以下の説明では、１つのパッド１３と１つのリード１７との接続について説明する。半導体チップ１１のパッド１３は第１ボンド点であり、リードフレーム１２のリード１７は第２ボンド点である。なお、図１においては、リード１７の図示は省略してあるが、図中の右側がリード１７側である。また、図３はキャピラリ４１の先端の移動を示す線図である。   Hereinafter, a preferred embodiment of the semiconductor device of the present invention will be described with reference to FIGS. As shown in FIGS. 1 and 2, in the semiconductor device of this embodiment, a wire loop 20 connects a pad 13 of a semiconductor chip 11 mounted on a lead frame 12 and a lead 17 formed on the lead frame 12. A semiconductor device to be connected. In the semiconductor device, a wire loop 20 for connecting a plurality of pads 13 and leads 17 is formed. In the following description, connection between one pad 13 and one lead 17 will be described. The pad 13 of the semiconductor chip 11 is a first bond point, and the lead 17 of the lead frame 12 is a second bond point. In FIG. 1, the lead 17 is not shown, but the right side in the drawing is the lead 17 side. FIG. 3 is a diagram showing the movement of the tip of the capillary 41.

まず、キャピラリ４１によってワイヤ２１の先端部に形成された図示しないイニシャルボールをパッド１３の上に超音波加振すると共に押し付けて接合し、パッド１３の上に圧着ボール２３とボールネック２５とを形成する第１ボンディング工程を行う。圧着ボール２３は球形のイニシャルボールがキャピラリ４１のフェイス部４３によって潰されて円板状になったもので、ボールネック２５はイニシャルボールの一部がキャピラリ４１のインナチャンファ部４５とストレート孔４７とに入り込むことによって形成されたもので、圧着ボール２３からワイヤ２１に向かって伸び、ワイヤ２１の直径よりも大きいキャピラリ４１のストレート孔４７と略と同様の直径を有する円柱形状となっている。キャピラリ４１をパッド１３に押し付けた際には、キャピラリ４１の先端は、図３に示す圧着ボール２３の上の点ａに位置している。   First, an initial ball (not shown) formed on the tip end of the wire 21 by the capillary 41 is ultrasonically vibrated and pressed onto the pad 13 to form a press-bonded ball 23 and a ball neck 25 on the pad 13. A first bonding step is performed. The press-bonded ball 23 is formed by a spherical initial ball being crushed by the face portion 43 of the capillary 41 into a disk shape, and the ball neck 25 is a portion of the initial ball having the inner chamfer portion 45 and the straight hole 47 of the capillary 41. It is formed by entering and extends from the crimping ball 23 toward the wire 21 and has a cylindrical shape having a diameter substantially the same as the straight hole 47 of the capillary 41 larger than the diameter of the wire 21. When the capillary 41 is pressed against the pad 13, the tip of the capillary 41 is positioned at a point a on the press-bonded ball 23 shown in FIG.

第１ボンディング工程の後、図１（ａ）から図１（ｃ）に示すような踏み付け工程が行われる。踏み付け工程では、図１（ａ）に示すように、ワイヤ２１を繰り出すと共にキャピラリ４１を上昇させて、キャピラリ４１の先端を図３に示す点ａから点ｂに移動させる。次に、図１（ｂ）に示すようにキャピラリ４１のリード１７側のフェイス部４３がボールネック２５の上部に来るまでリード１７と反対方向にキャピラリ４１を移動させて、キャピラリ４１の先端を図３の点ｂから点ｃに移動させる。この際ワイヤ２１はボールネック２５からリード１７と反対の方向に傾斜した状態となっている。そして、キャピラリ４１の先端を図３に示す点ｃから点ｄまで下降させ、図１（ｃ）に示すように、キャピラリ４１のリード１７側のフェイス部４３でボールネック２５のリード１７側を踏み付ける。踏み付けによって、円柱状のボールネック２５は圧着ボール２３よりも若干直径が小さい円板状の踏み付け部２５ａとなる。踏み付け部２５ａのリード１７側の上面は、キャピラリ４１のフェイス部４３によって押し潰されているのでフェイス部４３の形状に沿った平面状となっている。また、ワイヤ２１は踏み付け部２５ａのリード１７と反対側に折れ曲がると共に、キャピラリ４１のストレート孔４７のリード１７と反対側の内面に沿ってパッド１３の垂直方向に向かって伸びた状態となっている。   After the first bonding step, a stepping step as shown in FIGS. 1A to 1C is performed. In the stepping process, as shown in FIG. 1 (a), the wire 21 is fed out and the capillary 41 is raised to move the tip of the capillary 41 from point a to point b shown in FIG. Next, as shown in FIG. 1B, the capillary 41 is moved in the direction opposite to the lead 17 until the face portion 43 on the lead 17 side of the capillary 41 comes to the upper part of the ball neck 25, and the tip of the capillary 41 is illustrated. 3 from point b to point c. At this time, the wire 21 is inclined from the ball neck 25 in the direction opposite to the lead 17. Then, the tip of the capillary 41 is lowered from the point c shown in FIG. 3 to the point d, and the lead 17 side of the ball neck 25 is stepped on the face part 43 on the lead 17 side of the capillary 41 as shown in FIG. wear. By stepping, the columnar ball neck 25 becomes a disk-like stepping portion 25 a having a slightly smaller diameter than the press-bonded ball 23. The upper surface of the stepping portion 25 a on the lead 17 side is crushed by the face portion 43 of the capillary 41, and thus has a planar shape along the shape of the face portion 43. Further, the wire 21 is bent to the side opposite to the lead 17 of the stepping portion 25 a and extends in the vertical direction of the pad 13 along the inner surface of the straight hole 47 of the capillary 41 opposite to the lead 17. .

次に、図１（ｄ）から図１（ｆ）に示すような押し付け工程が行われる。図１（ｄ）に示すように、キャピラリ４１の先端からワイヤ２１を繰り出すと共にキャピラリ４１の先端を図３に示す点ｄから点ｅまで上昇させる。すると、ワイヤ２１はキャピラリ４１のストレート孔４７に沿って直線上に繰り出される。そして、キャピラリ４１の先端を図３に示す点ｅから点ｆまでリード１７側に向かって移動させる。すると、図１（ｅ）に示すように、キャピラリ４１のインナチャンファ部４５によってワイヤ２１はリード１７の方向に向かって押され、踏み付け部２５ａに続く折れ曲がり部２５ｂで折り曲げられる。そして、キャピラリ４１のリード１７と反対側にあるフェイス部４３が圧着ボール２３の上に来る位置まで、キャピラリ４１をリード１７の方向に移動させる。そして、キャピラリ４１の先端を図３の点ｆから点ｇまで降下させる。すると、図１（ｆ）に示すように、キャピラリ４１の下降によってボールネック２５を踏み付けて形成された踏み付け部２５ａの上にワイヤ２１の側面が押し付けられる。このワイヤ２１の押し付けによって、ワイヤ２１の折れ曲がり部２５ｂは踏み付け部２５ａの方向に向かって折り返され、折り返し部２６ａが形成される。ワイヤ２１の押し付け部２６のパッド１３側は、押し付けによって踏み付け部２５ａの上面に押し付けられ、押し付け部２６の上面はキャピラリ４１のフェイス部４３によって平面が形成される。押し付け工程が終了した状態では、キャピラリ４１はパッド１３のボンディング中心線２８よりもリード１７の側に寄った位置となっている。   Next, a pressing process as shown in FIG. 1 (d) to FIG. 1 (f) is performed. As shown in FIG. 1D, the wire 21 is fed out from the tip of the capillary 41, and the tip of the capillary 41 is raised from point d to point e shown in FIG. Then, the wire 21 is drawn out along a straight hole 47 of the capillary 41 in a straight line. Then, the tip of the capillary 41 is moved from the point e to the point f shown in FIG. Then, as shown in FIG. 1E, the wire 21 is pushed toward the lead 17 by the inner chamfer portion 45 of the capillary 41 and is bent at the bent portion 25b following the stepping portion 25a. Then, the capillary 41 is moved in the direction of the lead 17 until the face portion 43 on the side opposite to the lead 17 of the capillary 41 is located on the press-bonded ball 23. Then, the tip of the capillary 41 is lowered from point f to point g in FIG. Then, as shown in FIG. 1 (f), the side surface of the wire 21 is pressed onto the stepping portion 25 a formed by stepping on the ball neck 25 by lowering the capillary 41. By the pressing of the wire 21, the bent portion 25b of the wire 21 is folded back toward the stepping portion 25a to form a folded portion 26a. The pad 13 side of the pressing portion 26 of the wire 21 is pressed against the upper surface of the stepping portion 25 a by pressing, and a flat surface is formed on the upper surface of the pressing portion 26 by the face portion 43 of the capillary 41. When the pressing process is completed, the capillary 41 is located closer to the lead 17 than the bonding center line 28 of the pad 13.

キャピラリ４１のフェイス部４３によってワイヤ２１を踏み付け部２５ａの上に押し付ける際には、押し付けと同時にキャピラリ４１をリード１７の方向とリード１７と反対側の方向とに往復動作させて、ワイヤ２１を踏み付け部２５ａになじませるようにしても良いし、超音波加振によってキャピラリ４１の先端を振動させながらワイヤ２１の押し付けを行うようにしてもよい。   When the wire 21 is pressed onto the stepping portion 25 a by the face portion 43 of the capillary 41, the capillary 41 is reciprocated in the direction of the lead 17 and the direction opposite to the lead 17 simultaneously with the pressing, thereby stepping on the wire 21. You may make it adapt to the part 25a, and you may make it press the wire 21, vibrating the front-end | tip of the capillary 41 by ultrasonic vibration.

図２（ａ）に示すように、押し付け工程の後、キャピラリ４１の先端からワイヤ２１を繰り出してキャピラリ４１を上昇させながらリード１７の方向に向かって図３に示す点ｇから点ｈまで斜め上方に移動させる斜め上昇工程を行う。この斜め上昇工程によって、ワイヤ２１には、リード１７に向かって凸と成るような癖がつく。   As shown in FIG. 2A, after the pressing step, the wire 21 is drawn from the tip of the capillary 41 to raise the capillary 41, and obliquely upward from the point g to the point h shown in FIG. An oblique ascending process is performed. By this diagonally rising process, the wire 21 is wrinkled so as to be convex toward the lead 17.

図２（ｂ）に示すように、斜め上昇工程の後、キンク形成工程を行う。キンク形成工程は、ワイヤ２１をキャピラリ４１の先端から繰り出しながらキャピラリ４１の先端を図３に示す点ｈから点ｉまで上昇させた後、リード１７と反対方向に向かってリバース動作を行いキャピラリ４１の先端を図３の点ｉから点ｊまで移動させる。この移動により、先の押し付け工程の終了の際にパッド１３のボンディング中心線２８よりもリード１７側に寄っていたキャピラリ４１はリード１７と反対の方向の位置となる。このリバース動作によって、パッド１３のリード１７側から立ち上がっているワイヤ２１はリード１７と反対方向に向かって曲がりながら傾斜した形状となる。一方、キャピラリ４１内のワイヤ２１はパッド１３の面に略垂直な方向に保持されていることから、リバース動作が終了した状態のキャピラリ４１の先端付近のワイヤ２１には、リード１７と反対の方向に凸となるようなキンク３４が形成されている。   As shown in FIG. 2B, a kink forming process is performed after the oblique ascending process. In the kink forming process, the wire 21 is pulled out from the tip of the capillary 41 and the tip of the capillary 41 is raised from the point h to the point i shown in FIG. The tip is moved from point i to point j in FIG. By this movement, the capillary 41 that is closer to the lead 17 side than the bonding center line 28 of the pad 13 at the end of the previous pressing step is positioned in a direction opposite to the lead 17. By this reverse operation, the wire 21 rising from the lead 17 side of the pad 13 becomes an inclined shape while bending in the direction opposite to the lead 17. On the other hand, since the wire 21 in the capillary 41 is held in a direction substantially perpendicular to the surface of the pad 13, the wire 21 in the vicinity of the tip of the capillary 41 in the state where the reverse operation is completed is opposite to the lead 17. A kink 34 that is convex is formed.

図２（ｃ）から図２（ｅ）に示すように、リバース動作に続いて、第２ボンディング工程が行われる。図３に示す点ｊから点ｋまでワイヤ２１を繰り出しながらキャピラリ４１の先端を上昇させると、図２（ｃ）に示すように、キンク３４の先にワイヤ２１が繰り出されていく。キャピラリ４１の上昇により繰り出されるワイヤ２１の長さは先のリバース動作の際のワイヤ繰り出し長さよりも長くなっている。そして、図３の点ｋから図３の点ｍまでキャピラリ４１の先端を移動させ、図２（ｄ）、図２（ｅ）に示すように、キャピラリ４１をリード１７に向けてルーピングする。このルーピングによって、キンク３４はより大きく折れ曲がり、屈曲部２７となっていく。また、斜め上昇工程によってワイヤ２１に付いたリード１７に向かって凸の癖は、ルーピングによって押し付け部２６からリード１７に伸びるワイヤ２１を下に凸に湾曲させる形状となる。そして、キャピラリ４１の先端をリード１７に押し付けてリード１７にワイヤ２１を圧着させることによって接合する。ワイヤ２１がリード１７に接合されると第１ボンド点であるパッド１３と第２ボンド点であるリード１７とを接続するワイヤループ２０が形成される。半導体チップ１１の全てのパッド１３とリードフレーム１２の全てのリード１７との間がワイヤループ２０によって接続されると半導体装置の組立が終了する。   As shown in FIGS. 2C to 2E, the second bonding step is performed following the reverse operation. When the tip of the capillary 41 is raised while feeding the wire 21 from the point j to the point k shown in FIG. 3, the wire 21 is fed to the tip of the kink 34 as shown in FIG. The length of the wire 21 drawn out by raising the capillary 41 is longer than the wire feeding length in the previous reverse operation. Then, the tip of the capillary 41 is moved from the point k in FIG. 3 to the point m in FIG. 3, and the capillary 41 is looped toward the lead 17 as shown in FIGS. 2 (d) and 2 (e). By this looping, the kink 34 is bent more and becomes a bent portion 27. Further, the ridges convex toward the leads 17 attached to the wires 21 by the oblique ascending process have a shape in which the wires 21 extending from the pressing portions 26 to the leads 17 are curved downwardly by looping. Then, the tip of the capillary 41 is pressed against the lead 17 to bond the wire 21 to the lead 17. When the wire 21 is joined to the lead 17, a wire loop 20 that connects the pad 13 that is the first bond point and the lead 17 that is the second bond point is formed. When all the pads 13 of the semiconductor chip 11 and all the leads 17 of the lead frame 12 are connected by the wire loop 20, the assembly of the semiconductor device is completed.

本実施形態の半導体装置を組み立てるワイヤボンディングでは、踏み付け工程において、キャピラリ４１のフェイス部４３でボールネック２５を踏み潰してその高さを低くした後、ワイヤ２１を折り返して高さが低くなった踏み付け部２５ａの上にワイヤ２１の側面を押し付けてからワイヤ２１をリード１７に向かってルーピングするので、図２（ｅ）に示すようにパッド１３の上に形成される半導体装置のワイヤループ２０のヘッド高さＨ１を従来技術で開示されたループ高さより低くすることができるので、ワイヤループ２０の半導体チップ１１からの立ち上がり高さをより低くすることができる。また、押し付け工程において、ワイヤ２１の側面を踏み付け部２５ａの略平らな上面に押し付けるので、ルーピングの際に押し付け部２６からリード１７の方向に向かって伸びるワイヤ２１が上方向に向かって湾曲して、押し付け部２６とリード１７との間のワイヤループ２０の高さＨ２が高くなってしまうことを抑制することができ、ワイヤループ２０の半導体チップ１１からの立ち上がり高さをより低くすることができる。更に、斜め上昇工程でワイヤ２１に付けたリード１７に向かって凸の癖はルーピングによって押し付け部２６とリード１７との間のワイヤ２１に下に凸の湾曲形状を形成し、押し付け部２６からリード１７に向かうワイヤ２１が上方向に向かって湾曲し、ワイヤループ２０の高さＨ２が高くなってしまい、ワイヤループ２０全体の高さが高くなってしまうことを抑制することが出来ると共に、ワイヤループ２０の全体高さを均一に低くすることができる。なお、本実施形態の半導体装置では、押し付け部２６が圧着ボール２３の直径方向にはみ出すことはない。 In the wire bonding for assembling the semiconductor device of the present embodiment, in the stepping step, the ball neck 25 is stepped on the face portion 43 of the capillary 41 to reduce its height, and then the wire 21 is folded back to reduce the height. Since the side surface of the wire 21 is pressed on the portion 25a and then the wire 21 is looped toward the lead 17, the head of the wire loop 20 of the semiconductor device formed on the pad 13 as shown in FIG. since the height H 1 can be lower than the loop height disclosed in the prior art, it is possible to lower the rising height of the semiconductor chip 11 of the wire loop 20. Further, in the pressing step, the side surface of the wire 21 is pressed against the substantially flat upper surface of the stepping portion 25a, so that the wire 21 extending from the pressing portion 26 toward the lead 17 is bent upward during looping. , it is possible to suppress the height H 2 of the wire loop 20 between the pressing portion 26 and the lead 17 is increased, that the rising height of the semiconductor chip 11 of the wire loop 20 to lower it can. Furthermore, the convex ridges toward the lead 17 attached to the wire 21 in the oblique ascending process form a downward convex curved shape in the wire 21 between the pressing portion 26 and the lead 17 by looping, and the lead from the pressing portion 26 leads. wire 21 towards 17 is curved toward upward, it becomes higher height H 2 of the wire loop 20, along with it can be prevented that the total height of the wire loop 20 is increased, the wire The overall height of the loop 20 can be uniformly reduced. In the semiconductor device of this embodiment, the pressing portion 26 does not protrude in the diameter direction of the press-bonded ball 23.

以上説明した本実施形態の半導体装置を組み立てるワイヤボンディングでは、押し付け工程の後、斜め上昇工程、キンク形成工程を行って、ワイヤループ２０に屈曲部２７を形成することとして説明したが、パッド１３とリード１７との高さに差がないような場合には、キンク形成工程を行わず、斜め上昇工程の後に第２ボンディング工程を行ってパッド１３とリード１７とを接続することとしてもよい。   In the wire bonding for assembling the semiconductor device of the present embodiment described above, the bending portion 27 is formed in the wire loop 20 by performing the oblique ascending step and the kink forming step after the pressing step. When there is no difference in height from the lead 17, the kink forming process is not performed, and the pad 13 and the lead 17 may be connected by performing a second bonding process after the oblique ascending process.

図４、図５を参照しながら本発明の他の実施形態について説明する。先に図１から図３を参照して説明した実施形態と同様の部分については同様の符号を付して説明は省略する。本実施形態の半導体装置は、キャピラリ４１の先端が細くなった場合、或いは先端の細いキャピラリ４１を用いたワイヤボンディングによって形成されたワイヤループ２０を有している。   Another embodiment of the present invention will be described with reference to FIGS. Parts similar to those of the embodiment described above with reference to FIGS. 1 to 3 are denoted by the same reference numerals and description thereof is omitted. The semiconductor device of the present embodiment has a wire loop 20 formed when the tip of the capillary 41 becomes thin or by wire bonding using the capillary 41 with a thin tip.

図４に示すようにキャピラリ４１の先端が細い場合には、キャピラリ４１のフェイス部４３の面積が小さくなる。このため、１回の踏み付けではボールネック２５を十分に踏み付けることができず、ワイヤ２１の折り返し部２６の高さが高くなってしまう場合がある。そこで、図４、図５に示すように第１ボンディングの後、キャピラリ４１の上昇、リード１７と反対側への移動、キャピラリ４１の降下、ボールネックの踏み付けという一連の連続動作を２回繰り返して十分にボールネック２５の踏み付けを行うことが出来るようにしたものである。   As shown in FIG. 4, when the tip of the capillary 41 is thin, the area of the face portion 43 of the capillary 41 becomes small. For this reason, the ball neck 25 cannot be sufficiently stepped on by one stepping, and the height of the folded portion 26 of the wire 21 may become high. Therefore, as shown in FIGS. 4 and 5, after the first bonding, a series of continuous operations of raising the capillary 41, moving to the opposite side of the lead 17, lowering the capillary 41, and stepping on the ball neck are repeated twice. The ball neck 25 can be sufficiently stepped on.

図４（ａ）から図４（ｃ）に示すように、第１ボンディングの後、キャピラリ４１を上昇させてからリード１７と反対方向にキャピラリ４１を移動させ、その後キャピラリ４１を降下させ、キャピラリ４１のリード１７側のフェイス部４３によってボールネック２５のリード１７の側を踏み付ける。この動作においては、キャピラリの先端は、図５に示す点ａ、点ｂ、点ｃ、点ｄと移動していくが、点ｂから点ｃへの水平方向の移動距離はキャピラリ４１のフェイス部４３のリード１７側の側面が圧着ボール２３のリード１７側の側面よりも少しリード１７と反対側によった位置となるだけの移動量となる。このようにキャピラリ４１を水平移動させた後、キャピラリ４１を降下させてボールネック２５を踏み付けると、ちょうどキャピラリ４１のリード１７側のフェイス部４３によってボールネック２５のリード１７側の上面を水平な踏み付け部２５ａとすることが出来る。   As shown in FIG. 4A to FIG. 4C, after the first bonding, the capillary 41 is raised and then the capillary 41 is moved in the direction opposite to the lead 17, and then the capillary 41 is lowered and the capillary 41 is moved down. The lead 17 side of the ball neck 25 is stepped on by the face portion 43 on the lead 17 side. In this operation, the tip of the capillary moves to point a, point b, point c, and point d shown in FIG. 5, and the horizontal movement distance from point b to point c is the face portion of capillary 41. The amount of movement is such that the side surface of the lead 17 on the side of 43 is slightly positioned on the side opposite to the side of the lead 17 than the side surface on the side of the lead 17 of the press-bonded ball 23. After the capillary 41 is horizontally moved in this way, when the capillary 41 is lowered and the ball neck 25 is stepped on, the top surface of the ball neck 25 on the lead 17 side is leveled by the face portion 43 of the capillary 41 on the lead 17 side. It can be set as the stepping part 25a.

そして、図４（ｄ）から図４（ｆ）に示すように、再度キャピラリ４１を上昇させ、その後キャピラリをリード１７と反対側に水平に移動させ、再度キャピラリ４１を降下させ、キャピラリ４１のリード１７側のフェイス部４３によって先の踏み付けによって形成された踏み付け部２５ａのリード１７と反対側に位置しているボールネック２５を踏みつけて、水平な踏み付け部２５ａの面積を多くする。この動作においては、キャピラリの先端は、図５に示す点ｄ、点ｂ´、点ｃ´、点ｄ´と移動していく。点ｂ´から点ｃ´への水平方向の移動距離は水平な踏み付け部２５ａの面積を多くするために必要な移動量である。   Then, as shown in FIGS. 4D to 4F, the capillary 41 is raised again, and then the capillary is moved horizontally to the side opposite to the lead 17, and the capillary 41 is lowered again to read the capillary 41. The area of the horizontal stepping portion 25a is increased by stepping on the ball neck 25 located on the opposite side of the lead 17 of the stepping portion 25a formed by the previous stepping by the face portion 43 on the 17th side. In this operation, the tip of the capillary moves to point d, point b ′, point c ′, and point d ′ shown in FIG. The horizontal movement distance from the point b ′ to the point c ′ is a movement amount necessary to increase the area of the horizontal stepping portion 25a.

そして、踏み付け工程の２回の連続動作が終了したら、先の実施形態と同様、図１（ｄ）から図１（ｆ）に示すようにキャピラリ４１を上昇させてからリード１７側に移動し、その後キャピラリ４１を降下させてワイヤ２１を踏み付け部２５ａの上に押し付けて押し付け部２６を形成し、ワイヤ２１をリード１７に向かって斜め上方に向かって上昇させて斜め上昇工程を行い、キンクを形成工程を行った後、リード１７へのルーピングを行ってワイヤ２１をリード１７にボンディングする。なお、本実施形態の半導体装置では、押し付け部２６が圧着ボール２３の直径方向にはみ出すことはない。   Then, when the two continuous operations of the stepping process are completed, as in the previous embodiment, the capillary 41 is raised and moved to the lead 17 side as shown in FIG. Thereafter, the capillary 41 is lowered and the wire 21 is pressed onto the stepping portion 25a to form the pressing portion 26, and the wire 21 is lifted obliquely upward toward the lead 17 to perform a diagonally rising step to form a kink. After performing the process, the lead 21 is looped and the wire 21 is bonded to the lead 17. In the semiconductor device of this embodiment, the pressing portion 26 does not protrude in the diameter direction of the press-bonded ball 23.

以上説明した実施形態は、先に説明した実施形態と同様の効果を奏するとともに、先端が細くなったキャピラリ４１或いは先端が細いキャピラリ４１でも確実に低いワイヤループ２０を形成することができる。また、本実施形態の半導体装置を組み立てるワイヤボンディングでは、踏み付け工程のキャピラリ４１の上昇、リード１７と反対方向への水平移動、降下、踏み付けの一連の連続動作を２回繰り返して行うこととして説明したが、連続動作の繰り返しは２回に限らず、キャピラリ４１の先端の大きさに応じて何回繰り返すこととしてもよい。   The embodiment described above has the same effect as the embodiment described above, and can reliably form the low wire loop 20 even with the capillary 41 having a thin tip or the capillary 41 having a thin tip. In the wire bonding for assembling the semiconductor device of the present embodiment, a series of continuous operations of raising the capillary 41 in the stepping process, horizontally moving in the direction opposite to the lead 17, lowering, and stepping are repeated twice. However, the repetition of the continuous operation is not limited to two times, and may be repeated several times according to the size of the tip of the capillary 41.

１１ 半導体チップ、１２ リードフレーム、１３ パッド、１７ リード、２０ ワイヤループ、２１ ワイヤ、２３ 圧着ボール、２５ ボールネック、２５ａ 踏み付け部、２５ｂ 折れ曲がり部、２６ 押し付け部、２６ａ 折り返し部、２７ 屈曲部、２８ ボンディング中心線、３４ キンク、４１ キャピラリ、４３ フェイス部、４５ インナチャンファ部、４７ ストレート孔。   DESCRIPTION OF SYMBOLS 11 Semiconductor chip, 12 Lead frame, 13 Pad, 17 Lead, 20 Wire loop, 21 Wire, 23 Crimp ball, 25 Ball neck, 25a Stepping part, 25b Bending part, 26 Pressing part, 26a Folding part, 27 Bending part, 28 Bonding center line, 34 kink, 41 capillary, 43 face part, 45 inner chamfer part, 47 straight hole.

Claims (1)

第１ボンド点と第２ボンド点との間をワイヤで接続するワイヤループ形状を有する半導体装置であって、
前記ワイヤの先端に形成したイニシャルボールをキャピラリによって前記第１ボンド点に接合させて形成された圧着ボールとボールネックと、前記ボールネックの上に折り返され、前記圧着ボールの直径よりはみ出さない押し付け部と、前記押し付け部と前記第２ボンド点との間の前記ワイヤと、前記ワイヤと前記第２ボンド点との接合部とを含み、
前記ボールネックは、前記イニシャルボールを前記キャピラリによって前記第１ボンド点に接合させた後、前記キャピラリを上昇させ、続いて前記キャピラリを前記第２ボンド点と反対の方向に向かって移動させた後、前記キャピラリを降下させて前記キャピラリの前記第２ボンド点側の第１のフェイス部で前記第２ボンド点側の前記ボールネックの一部が踏み付けられて形成された平面を有し、
前記押し付け部は、前記キャピラリを降下させて前記第２ボンド点側の前記ボールネックの前記一部をその表面が平面状になるまで踏み付けた後、前記キャピラリを上昇させ、続いて前記キャピラリの前記第２ボンド点と反対側の第２のフェイス部が前記ボールネックの上に来るまで前記キャピラリを前記第２ボンド点に向かって移動させて前記第２ボンド点に向かって前記ワイヤを折り返し、その後前記キャピラリを降下させて踏み付けられて平面状となった前記ボールネックの前記一部の上に前記ワイヤを折り返し、前記ワイヤの側面を前記キャピラリの前記第２ボンド点と反対側の前記第２のフェイス部で押し付けて形成され、
前記押し付け部と前記第２ボンド点との間の前記ワイヤは、前記ワイヤの前記側面を前記キャピラリの前記第２ボンド点と反対側の前記第２のフェイス部で押し付けた後、前記キャピラリを前記第２ボンド点に向かって斜め上方に移動させ、その後前記キャピラリを上昇させ、続いてキャピラリを第２ボンド点と反対側に移動させるリバース動作を少なくとも１回行い、その後更にキャピラリを上昇させ、前記キャピラリを前記第２ボンド点の方向に移動させることにより形成される下に凸の湾曲部と前記下に凸の湾曲部の前記第２ボンド点側の上に凸の屈曲部とを含み、
前記ワイヤと前記第２ボンド点との接合部は、前記キャピラリを更に前記第２ボンド点に移動させて前記ワイヤを前記第２ボンド点に圧着させて接合することにより形成されていること、
を特徴とする半導体装置。 A semiconductor device having a wire loop shape for connecting a first bond point and a second bond point with a wire,
A press-bonded ball and a ball neck formed by joining an initial ball formed at the tip of the wire to the first bond point with a capillary, and a pressing that is folded over the ball neck and does not protrude from the diameter of the press-bonded ball Part, the wire between the pressing part and the second bond point, and a joint part between the wire and the second bond point,
The ball neck is formed by joining the initial ball to the first bond point by the capillary, then raising the capillary, and subsequently moving the capillary in a direction opposite to the second bond point. A plane formed by lowering the capillary so that a part of the ball neck on the second bond point side is stepped on at the first face portion on the second bond point side of the capillary;
The pressing portion lowers the capillary and steps on the part of the ball neck on the second bond point side until the surface thereof becomes planar, and then raises the capillary, and then the capillary The capillary is moved toward the second bond point until the second face portion opposite to the second bond point is on the ball neck, and then the wire is folded toward the second bond point. The wire is folded over the part of the ball neck that has been flattened by being lowered and stepped on the capillary, and the side surface of the wire is opposite to the second bond point of the capillary. It is formed by pressing on the face part,
The wire between the pressing portion and the second bond point presses the side surface of the wire with the second face portion opposite to the second bond point of the capillary, Move diagonally upward toward the second bond point, then raise the capillary, then perform a reverse operation to move the capillary to the opposite side of the second bond point, and then raise the capillary further, A downwardly convex curved portion formed by moving the capillary in the direction of the second bond point and a convexly bent portion on the second bond point side of the downward convex curved portion;
The joint between the wire and the second bond point is formed by further moving the capillary to the second bond point and crimping and bonding the wire to the second bond point;
A semiconductor device characterized by the above.
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