JP3293757B2 - Method of manufacturing lead frame assembly for manufacturing semiconductor device - Google Patents

Method of manufacturing lead frame assembly for manufacturing semiconductor device

Info

Publication number
JP3293757B2
JP3293757B2 JP5666697A JP5666697A JP3293757B2 JP 3293757 B2 JP3293757 B2 JP 3293757B2 JP 5666697 A JP5666697 A JP 5666697A JP 5666697 A JP5666697 A JP 5666697A JP 3293757 B2 JP3293757 B2 JP 3293757B2
Authority
JP
Japan
Prior art keywords
manufacturing
lead frame
support plate
strips
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP5666697A
Other languages
Japanese (ja)
Other versions
JPH10256447A (en
Inventor
隆昭 横山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Priority to JP5666697A priority Critical patent/JP3293757B2/en
Publication of JPH10256447A publication Critical patent/JPH10256447A/en
Application granted granted Critical
Publication of JP3293757B2 publication Critical patent/JP3293757B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/922Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222Sequential connecting processes
    • H01L2224/92242Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、リードフレーム、
特に、突出して形成された支持板又はコネクタ部に半導
体チップ又はワイヤを良好に固着できる半導体装置製造
用リードフレーム組立体の製造方法に関する。
TECHNICAL FIELD The present invention relates to a lead frame,
In particular, the present invention relates to a method for manufacturing a lead frame assembly for manufacturing a semiconductor device, which can satisfactorily fix a semiconductor chip or a wire to a protruding support plate or connector.

【0002】[0002]

【従来の技術】現在、種々の半導体装置を製造するた
め、半導体チップを組み立てる種々のリードフレームが
使用されている。例えば、半導体チップを固着する支持
板並びに半導体チップに対して電気的に接続されるダイ
パッド及び外部リードをそれぞれ有する複数個のパター
ンを一列に形成した金属製のリボン状に半導体装置製造
用リードフレームが形成される。
2. Description of the Related Art At present, various lead frames for assembling semiconductor chips are used for manufacturing various semiconductor devices. For example, a semiconductor device manufacturing lead frame is formed in a metal ribbon shape in which a plurality of patterns each having a support plate for fixing a semiconductor chip and a die pad and an external lead electrically connected to the semiconductor chip are formed in a row. It is formed.

【0003】このような半導体装置製造用リードフレー
ムを使用してダイオード装置を製造する場合に、例えば
図5に示す半導体装置製造用リードフレーム(7)が使
用される。半導体装置製造用リードフレーム(7)は、
互いに対向して且つ並行に配置される二対の連結条(3
及び4、5及び6)と、二対の連結条(3及び4、5及
び6)の長さ方向に一定の間隔をあけて互いに並行に配
置され且つ一対の連結条(3及び4、5及び6)を互い
に連結する複数の外側連結条(10)と、二対の連結条
(3及び4、5及び6)の一方の対の連結条(3、4)
から他方の対の連結条(5、6)に向かって突出し且つ
支持板(8b)を有するアイランド(8)と、二対の連
結条(3及び4、5及び6)の他方の対の連結条(5、
6)から一方の連結条(3、4)に向かって突出し且つ
コネクタ部(9b)を有するターミナルパッド(9)
と、アイランド(8)及びターミナルパッド(9)に並
行に配置され且つ一方の対の連結条(3、4)と他方の
対の連結条(5、6)とを連結する内側連結条(21)
とを有する。二対の連結条(3及び4、5及び6)の一
方の対は、第1の連結条(3)と、第1の連結条(3)
の内側に配置された第2の連結条(4)と、第1の連結
条(3)と第2の連結条(4)とを接続する第1の外部
リード(1)とを備えている。二対の連結条(3及び
4、5及び6)の他方の対は、第3の連結条(5)と、
第3の連結条(5)の内側に配置された第4の連結条
(6)と、第3の連結条(5)と第4の連結条(6)と
を接続する第2の外部リード(2)とを備えている。外
側連結条(10)は、第1の連結条(3)と第2の連結
条(4)との間及び第3の連結条(5)と第4の連結条
(6)との間に第1の外部リード(1)及び第2の外部
リード(2)と並行且つ交互に接続される。アイランド
(8)は、一方の対の連結条(3、4)の第2の連結条
(4)に接続された第1のネック部(8a)と、第1の
ネック部(8a)の先端部に形成され且つ半導体素子が
固着される支持板(8b)とを備えている。ターミナル
パッド(9)は他方の対の連結条(5、6)の第4の連
結条(6)に接続された第2のネック部(9a)と、第
2のネック部(9a)の先端部に形成されかつリード細
線(12)が接続されるコネクタ部(9b)とを備えて
いる。支持板(8b)は第1のネック部(8a)より幅
広に形成され、コネクタ部(9b)は第2のネック部
(9a)より幅広に形成される。アイランド(8)とタ
ーミナルパッド(9)は同一直線上に整列して配置され
る。
When manufacturing a diode device using such a semiconductor device manufacturing lead frame, for example, a semiconductor device manufacturing lead frame (7) shown in FIG. 5 is used. The semiconductor device manufacturing lead frame (7)
Two pairs of connecting strips (3
, 4, 5 and 6) and two pairs of connecting strips (3, 4, 5 and 6) which are arranged parallel to each other at a fixed interval in the longitudinal direction and have a pair of connecting strips (3, 4, 5 and 6). And 6) and a pair of connecting strips (3, 4) of two pairs of connecting strips (3 and 4, 5 and 6).
And an island (8) projecting toward the other pair of connecting strips (5, 6) and having a support plate (8b), and connecting the other pair of two pairs of connecting strips (3 and 4, 5 and 6). Article (5,
6) Terminal pad (9) projecting toward one connecting strip (3, 4) and having a connector portion (9b).
And an inner connecting strip (21) arranged in parallel with the island (8) and the terminal pad (9) and connecting one pair of connecting strips (3, 4) and the other pair of connecting strips (5, 6). )
And One pair of the two pairs of connecting strips (3 and 4, 5 and 6) includes a first connecting strip (3) and a first connecting strip (3).
And a first external lead (1) for connecting the first connecting rod (3) and the second connecting rod (4). . The other pair of two pairs of links (3 and 4, 5 and 6) is a third link (5),
A fourth connecting strip (6) arranged inside the third connecting strip (5), and a second external lead connecting the third connecting strip (5) and the fourth connecting strip (6). (2). The outer connecting line (10) is between the first connecting line (3) and the second connecting line (4) and between the third connecting line (5) and the fourth connecting line (6). It is connected in parallel and alternately with the first external lead (1) and the second external lead (2). The island (8) has a first neck portion (8a) connected to the second connection portion (4) of the pair of connection portions (3, 4), and a tip of the first neck portion (8a). And a support plate (8b) formed at the portion and to which the semiconductor element is fixed. The terminal pad (9) has a second neck (9a) connected to the fourth connecting strip (6) of the other pair of connecting strips (5, 6), and a tip of the second neck (9a). And a connector part (9b) formed in the part and connected to the thin lead wire (12). The support plate (8b) is formed wider than the first neck (8a), and the connector (9b) is formed wider than the second neck (9a). The island (8) and the terminal pad (9) are arranged on the same straight line.

【0004】従って、第1の外部リード(1)及び連結
部(10)は一対の第1の連結条(3)及び第2の連結
条(4)の間に互いに並行に且つ交互に連結され、同様
に、第2の外部リード(2)及び外側連結条(10)は
一対の第3の連結条(5)及び第4の連結条(6)の間
に互いに並行に且つ交互に連結される。第1の連結条
(3)より内側の第2の連結条(4)と第3の連結条
(5)より内側の第4の連結条(6)との間には、外側
連結条(10)と略同一直線上に内側連結条(21)が
接続される。また、第1の外部リード(1)と略同一直
線上で内側の連結条(4)の内側にアイランド(8)が
突出して形成される。更に、第2の外部リード(2)と
略同一直線上で内側の連結条(6)の内側にターミナル
パッド(ボンディングパッド部)(9)が突出して形成
される。
Accordingly, the first external lead (1) and the connecting portion (10) are connected to each other in parallel and alternately between the pair of the first connecting strip (3) and the second connecting strip (4). Similarly, the second external lead (2) and the outer connecting strip (10) are connected in parallel and alternately with each other between a pair of the third connecting strip (5) and the fourth connecting strip (6). You. An outer connecting line (10) is provided between the second connecting line (4) inside the first connecting line (3) and the fourth connecting line (6) inside the third connecting line (5). ), The inner connecting strip (21) is connected on substantially the same straight line. Further, an island (8) is formed so as to protrude inside the inner connecting strip (4) on substantially the same straight line as the first external lead (1). Further, a terminal pad (bonding pad portion) (9) is formed so as to protrude on the same straight line as the second external lead (2) and inside the inner connecting strip (6).

【0005】周知のダイボンディング方法によって、ダ
イオードチップ等の半導体素子(11)が支持板(8
b)に固着され、支持板(8b)の上面に形成された電
極(上面電極)(図示せず)と、コネクタ部(9b)と
の間はリード細線(ワイヤ)(12)により電気的に接
続される。図5では、併置された2対のアイランド
(8)及びターミナルパッド(9)を示すが、実際の半
導体装置製造用リードフレーム(7)には、アイランド
(8)及びターミナルパッド(9)が連結条(3〜6)
の長さ方向に沿って連続的に且つ互いに並行に設けら
れ、半導体装置製造用リードフレーム(7)は金属製の
リボンにより細長く形成される。
[0005] By a known die bonding method, a semiconductor element (11) such as a diode chip is mounted on a support plate (8).
b) between the electrode (upper surface electrode) (not shown) formed on the upper surface of the support plate (8b) and the connector portion (9b) by a thin lead wire (12). Connected. Although FIG. 5 shows two pairs of islands (8) and terminal pads (9) juxtaposed, the islands (8) and terminal pads (9) are connected to the actual semiconductor device manufacturing lead frame (7). Article (3-6)
The semiconductor device manufacturing lead frame (7) is formed to be elongated by a metal ribbon.

【0006】支持板(8b)に半導体素子(11)を接
着するときに、ダイボンダ(自動半導体素子固着機)の
吸引保持具(コレット)によって半導体素子(11)を
吸引保持し、支持板(8b)と並行な仮想平面内で吸引
保持具に振動を加えつつ、支持板(8b)上の半田に対
して半導体素子(11)を押圧し、半導体素子(11)
を支持板(8b)に擦り合わせて固着して、ダイボンデ
ィングを行う。その後、ワイヤボンダ(自動ワイヤ接続
機)のキャピラリより導出されたワイヤの先端部と共
に、支持板(8b)と並行な仮想平面内でキャピラリに
機械的振動を加えつつ、ワイヤの先端部を半導体素子
(11)の上面電極に押し付けて、ワイヤの先端部を接
続する。次に、キャピラリからワイヤを繰り出しながら
キャピラリを大きく引き回してコネクタ部(9b)上に
移動し、再び、キャピラリにコネクタ部(9b)と並行
な仮想平面内で機械的振動を加えつつ、ワイヤをコネク
タ部(9b)に押圧し、ワイヤの他端をコネクタ部(9
b)に接続する。半導体素子(11)の上面電極とコネ
クタ部(9b)との間に接続されたワイヤはリード細線
(12)となる。このように、周知のワイヤボンディン
グ法により、半導体素子(11)の上面電極とコネクタ
部(9b)とをリード細線(12)を介して接続する。
実際のワイヤボンディングには様々の接続方法があり、
例えばキャピラリに超音波振動又は機械的振動を加える
と共に、ボンディングパッド部(9)を加熱するサーモ
ソニックボンディング法(超音波併用熱圧着ワイヤボン
ディング)でもよい。
When the semiconductor element (11) is adhered to the support plate (8b), the semiconductor element (11) is suction-held by a suction holder (collet) of a die bonder (automatic semiconductor element fixing machine), and the support plate (8b) is held. The semiconductor element (11) is pressed against the solder on the support plate (8b) while applying vibration to the suction holder in a virtual plane parallel to the semiconductor element (11).
Are rubbed against the support plate (8b) and fixed, and die bonding is performed. Thereafter, while applying mechanical vibration to the capillary in a virtual plane parallel to the support plate (8b) together with the tip of the wire derived from the capillary of the wire bonder (automatic wire connection machine), the tip of the wire is connected to the semiconductor element ( The tip of the wire is connected by pressing against the upper electrode of 11). Next, while the wire is drawn out from the capillary, the capillary is largely drawn and moved onto the connector (9b), and the wire is again subjected to mechanical vibration in a virtual plane parallel to the connector (9b). Part (9b), and the other end of the wire is connected to the connector part (9b).
Connect to b). The wire connected between the upper surface electrode of the semiconductor element (11) and the connector (9b) becomes a thin lead wire (12). As described above, the upper electrode of the semiconductor element (11) and the connector section (9b) are connected to each other through the thin lead wires (12) by a known wire bonding method.
There are various connection methods for actual wire bonding,
For example, a thermosonic bonding method (ultrasonic combined thermo-compression wire bonding) in which ultrasonic vibration or mechanical vibration is applied to the capillary and the bonding pad portion (9) is heated may be used.

【0007】半導体素子(11)を固着し且つリード細
線(12)を接続した半導体装置製造用リードフレーム
(7)には、図1に破線で示すように、周知のトランス
ファーモールド方法によって支持板(8b)等を被覆す
る樹脂封止体(13)が形成され、最後に連結条(3〜
6)及び連結部10を切断除去して、個別化した半導体
装置が完成する。
A semiconductor device manufacturing lead frame (7) to which a semiconductor element (11) is fixed and to which a lead wire (12) is connected is mounted on a support plate (7) by a well-known transfer molding method as shown by a broken line in FIG. 8b) and the like, and a resin sealing body (13) covering the same is formed.
6) And the connecting portion 10 is cut and removed, and an individualized semiconductor device is completed.

【0008】[0008]

【発明が解決しようとする課題】ところで、ダイボンデ
ィングの際にコレットの振動に伴って支持板(8b)が
同時に振動すると、半導体素子(11)を支持板(8
b)に良好に擦り合わせることができず、半導体素子
(11)を支持板(8b)に十分な機械的強度で固着す
ることができない。同様に、ワイヤボンディングの際に
キャピラリの振動に伴って支持板(8b)又はボンディ
ングパッド(9)が振動すると、ワイヤを半導体素子
(11)上の上面電極及びボンディングパッド(9)に
擦り合わせる摩擦量が不足して、ワイヤの端部を十分な
機械的強度で半導体素子(11)及びボンディングパッ
ド(9)に接続することができない。本発明は、十分な
機械的強度で半導体素子又はワイヤを半導体装置製造用
リードフレームに固着できる半導体装置製造用リードフ
レーム組立体の製造方法を提供することを目的とする。
When the support plate (8b) vibrates simultaneously with the vibration of the collet during die bonding, the semiconductor element (11) is moved to the support plate (8).
Therefore, the semiconductor element (11) cannot be fixed to the support plate (8b) with sufficient mechanical strength. Similarly, when the support plate (8b) or the bonding pad (9) vibrates with the vibration of the capillary during wire bonding, the friction that rubs the wire against the upper surface electrode on the semiconductor element (11) and the bonding pad (9). Insufficient quantities make it possible to connect the ends of the wires to the semiconductor element (11) and the bonding pads (9) with sufficient mechanical strength. An object of the present invention is to provide a method for manufacturing a lead frame assembly for manufacturing a semiconductor device, which can fix a semiconductor element or a wire to a lead frame for manufacturing a semiconductor device with sufficient mechanical strength.

【0009】[0009]

【課題を解決するための手段】本発明による半導体装置
製造用リードフレーム組立体の製造方法は、互いに対向
して且つ並行に配置される二対の連結条(3及び4、5
及び6)と、二対の連結条(3及び4、5及び6)の長
さ方向に一定の間隔をあけて互いに並行に配置され且つ
一対の連結条(3及び4、5及び6)を互いに連結する
複数の外側連結条(10)と、二対の連結条(3及び
4、5及び6)の一方の対の連結条(3、4)から他方
の連結条(5、6)に向かって突出し且つ支持板(8
b)を有するアイランド(8)と、二対の連結条(3及
び4、5及び6)の他方の対の連結条(5、6)から一
方の連結条(3、4)に向かって突出し且つコネクタ部
(9b)を有するターミナルパッド(9)と、コネクタ
部(9b)と内側連結条(21)とを連結する第1の補
助連結条(15)と、支持板(8b)と内側連結条(2
1)とを連結する第2の補助連結条(16)とを有する
半導体装置製造用リードフレーム(14)を準備する工
程と、リードフレーム(14)を台座(17)上に配置
すると共に、第1の補助連結条(15)又は第2の補助
連結条(16)を固定用治具(18)と台座(17)と
の間に挟持する工程と、支持板(8b)又はコネクタ部
(9b)にダイボンディング又はワイヤボンディングを
行う工程とを含む。
According to the present invention, there is provided a method of manufacturing a lead frame assembly for manufacturing a semiconductor device, comprising two pairs of connecting strips (3, 4, 5, 5) arranged in parallel with each other.
And 6) and two pairs of connecting strips (3, 4, 5 and 6) which are arranged parallel to each other at a fixed interval in the length direction of the connecting strips (3 and 4, 5 and 6). A plurality of outer connecting strips (10) connected to each other, and one pair of connecting strips (3, 4) of the two pairs of connecting strips (3, 4, 5 and 6) to the other connecting strip (5, 6). And a support plate (8
b) and an island (8) having two pairs of connecting strips (3 and 4, 5 and 6) projecting from the other pair of connecting strips (5, 6) toward one connecting strip (3, 4). And a terminal pad (9) having a connector part (9b), a first auxiliary connecting part (15) connecting the connector part (9b) and the inner connecting part (21), and an inner connecting part with the support plate (8b). Article (2
(1) preparing a semiconductor device manufacturing lead frame (14) having a second auxiliary connecting strip (16) for connecting the lead frame (14) to the base (17); A step of clamping the first auxiliary connecting line (15) or the second auxiliary connecting line (16) between the fixing jig (18) and the pedestal (17), and supporting the support plate (8b) or the connector portion (9b). ) Includes a step of performing die bonding or wire bonding.

【0010】固定用治具(18)と台座(17)との間
に第1の補助連結条(15)又は第2の補助連結条(1
6)を挟持して、ダイボンディング又はワイヤボンディ
ングを行うので、ダイボンディング又はワイヤボンディ
ング時にコネクタ部(9b)及び支持板(8b)の振動
を十分に抑制することができる。
A first auxiliary connecting line (15) or a second auxiliary connecting line (1) is provided between the fixing jig (18) and the pedestal (17).
Since the die bonding or the wire bonding is performed while holding 6), the vibration of the connector portion (9b) and the support plate (8b) can be sufficiently suppressed during the die bonding or the wire bonding.

【0011】従って、半導体素子(11)と支持板(8
b)との間がろう材(半田)によって良好に固着され、
また、ワイヤ(12)が良好に接続される。即ち、十分
な機械的強度をもって且つ所定の位置に支持板(8b)
に半導体素子(11)を固着することができ、十分な機
械的強度をもって且つ所定の位置でコネクタ部(9b)
にワイヤ(12)を接続することができる。
Therefore, the semiconductor element (11) and the support plate (8)
b) is well fixed by a brazing material (solder),
Also, the wires (12) are connected well. That is, the supporting plate (8b) is provided at a predetermined position with sufficient mechanical strength.
The semiconductor element (11) can be fixed to the connector part (9b) at a predetermined position with sufficient mechanical strength.
Can be connected to a wire (12).

【0012】本発明の実施の形態では、支持板(8b)
及びコネクタ部(9b)の両側の内側連結条(21)と
支持板(8b)及びコネクタ部(9b)とをそれぞれ連
結して二対の連結条(3及び4、5及び6)に対し並行
に配置された第1の補助連結条(15)と第2の補助連
結条(16)を有する半導体装置製造用リードフレーム
(14)を準備する工程を含む。
In the embodiment of the present invention, the support plate (8b)
And the inner connecting strips (21) on both sides of the connector section (9b) are connected to the support plate (8b) and the connector section (9b) respectively so as to be parallel to the two pairs of connecting strips (3 and 4, 5 and 6). Preparing a lead frame (14) for manufacturing a semiconductor device having a first auxiliary connecting line (15) and a second auxiliary connecting line (16) arranged in the semiconductor device.

【0013】リードフレーム(14)に振動を加えたと
きに、アイランド(8)及びターミナルパッド(9)の
先端部で特に振動が増大しやすいが、アイランド(8)
及びターミナルパッド(9)の両側にそれぞれ接続され
た第1の補助連結条(15)と第2の補助連結条(1
6)を固定用治具(18)により固定するため、アイラ
ンド(8)及びターミナルパッド(9)を確実に且つ強
固に固定することができる。
When vibration is applied to the lead frame (14), the vibration is particularly likely to increase at the tip of the island (8) and the terminal pad (9).
And a first auxiliary link (15) and a second auxiliary link (1) connected to both sides of the terminal pad (9), respectively.
Since 6) is fixed by the fixing jig (18), the island (8) and the terminal pad (9) can be fixed securely and firmly.

【0014】二対の連結条(3及び4、5及び6)の一
方の対の連結条(3、4)に有する第1の連結条(3)
と第1の連結条(3)の内側に配置された第2の連結条
(4)とを接続する第1の外部リード(1)と、二対の
連結条(3及び4、5及び6)の他方の対の連結条
(5、6)に有する第3の連結条(5)と第3の連結条
(5)の内側に配置された第4の連結条(6)とを接続
する第2の外部リード(2)とを備え、第1の連結条
(3)と第2の連結条(4)との間及び第3の連結条
(5)と第4の連結条(6)との間を接続する外側連結
条(10)を、第1の外部リード(1)と第2の外部リ
ード(2)とに並行且つ交互に配置したリードフレーム
(14)を準備する工程を含む。
The first connecting strip (3) of one pair of connecting strips (3, 4) of the two pairs of connecting strips (3 and 4, 5 and 6)
A first external lead (1) for connecting the first external lead (1) and a second connecting rod (4) arranged inside the first connecting rod (3), and two pairs of connecting rods (3 and 4, 5 and 6) ) Of the other pair of connecting strips (5, 6), and the fourth connecting strip (6) arranged inside the third connecting strip (5). A second external lead (2), between the first connecting line (3) and the second connecting line (4), and between the third connecting line (5) and the fourth connecting line (6); Preparing a lead frame (14) in which outer connecting strips (10) connecting the first and second outer leads (1) and (2) are arranged in parallel and alternately. .

【0015】ダイボンディング又はワイヤボンディング
を行ったリードフレーム組立体の半導体素子並びにアイ
ランド(8)及びターミナルパッド(9)の一部が樹脂
封止体(13)により封止される工程を含む。
The method includes a step of sealing a part of the semiconductor element and the island (8) and the terminal pad (9) of the lead frame assembly on which the die bonding or the wire bonding has been performed by the resin sealing body (13).

【0016】樹脂封止体(13)による封止の前又は後
に第1の補助連結条(15)又は第2の補助連結条(1
6)とが切断される工程を含む。
Before or after the sealing with the resin sealing body (13), the first auxiliary connecting line (15) or the second auxiliary connecting line (1)
6) is cut.

【0017】[0017]

【発明の実施の形態】以下、本発明による半導体装置製
造用リードフレーム組立体の製造方法を図1〜図4につ
いて説明する。図1〜図4では、図5に示す箇所と同一
の部分には、同一の符号を付してその説明を省略する。
図1に示すように、本発明による半導体装置製造用リー
ドフレーム(14)では、第1の補助連結条(15)に
より支持板(8b)と内側連結条(21)とを連結する
と共に、第2の補助連結条(16)によりコネクタ部
(9b)と内側連結条(21)とを連結する点において
図5に示す従来の半導体装置製造用リードフレームと相
違する。第1の補助連結条(15)と第2の補助連結条
(16)は、二対の連結条(3及び4、5及び6)に対
し並行に配置され且つそれぞれコネクタ部(9b)及び
支持板(8b)と、コネクタ部(9b)及び支持板(8
b)の両側の内側連結条(21)とを連結する。隣り合
う支持板(8b)の間及び隣り合うコネクタ部(9b)
の間で、内側連結条(21)は、第2の連結条(4)と
第4の連結条(6)とを接続し、支持板(8b)は第1
の補助連結条(15)によって隣り合う内側連結条(2
1)に連結され、コネクタ部(9b)は第2の補助連結
条(16)によって隣り合う内側連結条(21)に連結
される。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A method of manufacturing a lead frame assembly for manufacturing a semiconductor device according to the present invention will be described below with reference to FIGS. 1 to 4, the same portions as those shown in FIG. 5 are denoted by the same reference numerals, and description thereof will be omitted.
As shown in FIG. 1, in the lead frame (14) for manufacturing a semiconductor device according to the present invention, the support plate (8b) and the inner connecting strip (21) are connected by the first auxiliary connecting strip (15). The second embodiment differs from the conventional semiconductor device manufacturing lead frame shown in FIG. 5 in that the connector portion (9b) and the inner connection portion (21) are connected by the second auxiliary connection portion (16). The first auxiliary connecting line (15) and the second auxiliary connecting line (16) are arranged in parallel to the two pairs of connecting lines (3 and 4, 5 and 6) and respectively have a connector part (9b) and a supporting part. Plate (8b), connector part (9b) and support plate (8
b) are connected to the inner connecting strips (21) on both sides. Between adjacent support plates (8b) and adjacent connector portions (9b)
, The inner connecting line (21) connects the second connecting line (4) and the fourth connecting line (6), and the support plate (8b) is connected to the first connecting line (4).
Inner connecting strips (2)
1), and the connector part (9b) is connected to the adjacent inner connecting strip (21) by the second auxiliary connecting strip (16).

【0018】図1に示す半導体装置製造用リードフレー
ム(14)から本発明による半導体装置製造用リードフ
レーム組立体を製造する際に、互いに対向して且つ並行
に配置される二対の連結条(3及び4、5及び6)と、
二対の連結条(3及び4、5及び6)の長さ方向に一定
の間隔をあけて互いに並行に配置され且つ一対の連結条
(3及び4、5及び6)を互いに連結する複数の外側連
結条(10)と、二対の連結条(3及び4、5及び6)
の一方の対の連結条(3、4)から他方の連結条(5、
6)に向かって突出し且つ支持板(8b)を有するアイ
ランド(8)と、二対の連結条(3及び4、5及び6)
の他方の対の連結条(5、6)から一方の連結条(3、
4)に向かって突出し且つコネクタ部(9b)を有する
ターミナルパッド(9)と、コネクタ部(9b)と内側
連結条(21)とを連結する第1の補助連結条(15)
と、支持板(8b)と内側連結条(21)とを連結する
第2の補助連結条(16)とを有する半導体装置製造用
リードフレーム(14)を準備する。その際に、二対の
連結条(3及び4、5及び6)に対し並行に配置され且
つそれぞれ支持板(8b)及びコネクタ部(9b)と、
支持板(8b)及びコネクタ部(9b)の両側の内側連
結条(21)とを連結する第1の補助連結条(15)と
第2の補助連結条(16)を設ける。また、第1の連結
条(3)と第2の連結条(4)との間及び第3の連結条
(5)と第4の連結条(6)との間に第1の外部リード
(1)及び第2の外部リード(2)と並行且つ交互に外
側連結条(10)を接続する。
When a lead frame assembly for manufacturing a semiconductor device according to the present invention is manufactured from the lead frame (14) for manufacturing a semiconductor device shown in FIG. 1, two pairs of connecting strips are arranged facing each other and in parallel. 3 and 4, 5 and 6);
A plurality of pairs of connecting strips (3, 4, 5 and 6) which are arranged in parallel to each other at a fixed interval in the length direction of the connecting strips (3 and 4, 5 and 6) and connect the pair of connecting strips (3, 4, 5 and 6) to each other. Outer connecting line (10) and two pairs of connecting lines (3 and 4, 5 and 6)
From one pair of connecting lines (3, 4) to the other connecting line (5,
Island (8) projecting towards 6) and having a support plate (8b), and two pairs of connecting strips (3 and 4, 5 and 6)
From the other pair of connecting lines (5, 6) to one connecting line (3,
A terminal pad (9) projecting toward 4) and having a connector part (9b), and a first auxiliary connecting part (15) connecting the connector part (9b) and the inner connecting part (21).
A lead frame (14) for manufacturing a semiconductor device having a support plate (8b) and a second auxiliary connecting line (16) for connecting the inner connecting line (21) is prepared. At this time, the support plate (8b) and the connector portion (9b) are arranged in parallel with the two pairs of connecting strips (3, 4, 5, and 6), and
A first auxiliary connecting line (15) and a second auxiliary connecting line (16) for connecting the support plate (8b) and the inner connecting lines (21) on both sides of the connector portion (9b) are provided. In addition, a first external lead () is provided between the first connecting line (3) and the second connecting line (4) and between the third connecting line (5) and the fourth connecting line (6). The outer connecting strips (10) are connected in parallel and alternately with the first external lead (2) and the second external lead (2).

【0019】図2に示すように、台座(17)上に半導
体装置製造用リードフレーム(14)を載置し、第1の
補助連結条(15)に固定用治具(18)を押圧して台
座(17)と固定用治具(18)との間に第1の補助連
結条(15)を挟持し、支持板(8b)を台座(17)
の主面に密着させて固定する。このため、第1の補助連
結条(15)は固定用治具(18)と台座(17)との
間に挟持できる幅を有する。次に、半導体素子(11)
をコレット(20)で吸着保持し、支持板(8b)と並
行な仮想平面内でコレット(20)に超音波振動を加え
つつ、半田(22)を介して支持板(8b)に半導体素
子(11)を擦り付けてダイボンディングを行う。図2
に示すように、第1の補助連結条(15)が固定用治具
(18)により押圧されるため、支持板(8b)が台座
(17)に密着して固定され、コレット(20)の振動
の際に支持板(8b)を固定して、支持板(8b)の振
動を十分に抑制することができる。半導体装置製造用リ
ードフレーム(14)に振動を加えたときに、アイラン
ド(8)及びターミナルパッド(9)の先端部では特に
振動が増大するおそれがあるが、アイランド(8)及び
ターミナルパッド(9)の両側にそれぞれ接続された第
1の補助連結条(15)と第2の補助連結条(16)を
固定用治具(18)により固定するため、アイランド
(8)及びターミナルパッド(9)を確実に且つ強固に
固定することができる。これにより、半田(22)を所
望の厚さに形成し、十分な機械的強度をもって且つ所定
の位置で支持板(8b)に半導体素子(11)を固着す
ることができ、信頼性の高い良好なダイボンディングが
可能である。
As shown in FIG. 2, a semiconductor device manufacturing lead frame (14) is placed on a pedestal (17), and a fixing jig (18) is pressed against a first auxiliary connecting strip (15). The first auxiliary connecting strip (15) is sandwiched between the pedestal (17) and the fixing jig (18), and the support plate (8b) is attached to the pedestal (17).
Closely fix to the main surface of. For this reason, the first auxiliary connecting strip (15) has a width that can be sandwiched between the fixing jig (18) and the pedestal (17). Next, the semiconductor device (11)
Is sucked and held by a collet (20), and while applying ultrasonic vibration to the collet (20) in a virtual plane parallel to the support plate (8b), the semiconductor element ( 11) is rubbed to perform die bonding. FIG.
As shown in (1), since the first auxiliary connecting strip (15) is pressed by the fixing jig (18), the support plate (8b) is fixed in close contact with the pedestal (17), and the collet (20) is fixed. By fixing the support plate (8b) during vibration, the vibration of the support plate (8b) can be sufficiently suppressed. When vibration is applied to the semiconductor device manufacturing lead frame (14), the vibration may increase particularly at the tip of the island (8) and the terminal pad (9). ), The first auxiliary connecting line (15) and the second auxiliary connecting line (16), which are respectively connected to both sides, are fixed by the fixing jig (18), so that the island (8) and the terminal pad (9) are fixed. Can be securely and firmly fixed. Thereby, the solder (22) can be formed to a desired thickness, and the semiconductor element (11) can be fixed to the support plate (8b) at a predetermined position with sufficient mechanical strength, and the reliability is good. Die bonding is possible.

【0020】また、図2の半導体装置製造用リードフレ
ーム(14)にワイヤ(12)をワイヤボンディングす
るときは、図3及び図4に示すように、半導体装置製造
用リードフレーム(14)を台座(17)に載置し、固
定用治具(18)で第1の補助連結条(15)を押さえ
て、第1の補助連結条(15)を固定用治具(18)と
台座(17)との間に挟持して、支持板(8b)を台座
(17)に密着させて固定する。次に、キャピラリ(1
9)からワイヤ(12)を繰り出し、支持板(8b)と
並行な仮想平面内でキャピラリ(19)に超音波振動を
加えつつ、ワイヤ(12)の一端を半導体素子(11)
の上面電極(図示せず)に押圧して接続する。このとき
も、第1の補助連結条(15)が固定用治具(18)に
より押圧されるため、支持板(8b)が台座(17)に
密着して固定され、キャピラリ(19)の振動の際に支
持板(8b)を固定して、支持板(8b)の振動を十分
に抑制することができる。従って、ワイヤ(12)の端
部が十分な機械的強度で半導体素子(11)の上面電極
に接続される。
When the wire (12) is wire-bonded to the semiconductor device manufacturing lead frame (14) of FIG. 2, the semiconductor device manufacturing lead frame (14) is mounted on the pedestal as shown in FIGS. (17), the first auxiliary connecting strip (15) is pressed by the fixing jig (18), and the first auxiliary connecting strip (15) is fixed to the fixing jig (18) and the pedestal (17). ), And the support plate (8b) is fixed to the pedestal (17) in close contact therewith. Next, the capillary (1
The wire (12) is unreeled from 9), and one end of the wire (12) is connected to the semiconductor element (11) while applying ultrasonic vibration to the capillary (19) in a virtual plane parallel to the support plate (8b).
To the upper surface electrode (not shown). Also at this time, since the first auxiliary connecting strip (15) is pressed by the fixing jig (18), the support plate (8b) is fixed in close contact with the pedestal (17) and the capillary (19) vibrates. At this time, the support plate (8b) is fixed, and the vibration of the support plate (8b) can be sufficiently suppressed. Therefore, the end of the wire (12) is connected to the upper surface electrode of the semiconductor element (11) with sufficient mechanical strength.

【0021】その後、図4に示すように、固定用治具
(18)で第2の補助連結条(16)を押さえ、第2の
補助連結条(16)を固定用治具(18)と台座(1
7)との間に挟持してターミナルパッド(9)を台座
(17)に密着させて固定する。続いて、キャピラリ
(19)をワイヤ(12)を繰り出しながら、ターミナ
ルパッド(9)の上方に移動し、コネクタ部(9b)と
並行な仮想平面内でキャピラリ(19)に超音波振動を
加えつつ、ワイヤ(12)の他端をターミナルパッド
(9)に押圧接続する。
Thereafter, as shown in FIG. 4, the second auxiliary connecting strip (16) is pressed by the fixing jig (18), and the second auxiliary connecting strip (16) is fixed to the fixing jig (18). Pedestal (1
7) and the terminal pad (9) is closely attached to the pedestal (17) and fixed. Subsequently, the capillary (19) is moved above the terminal pad (9) while feeding out the wire (12), and while applying ultrasonic vibration to the capillary (19) in a virtual plane parallel to the connector (9b). The other end of the wire (12) is pressed and connected to the terminal pad (9).

【0022】ターミナルパッド(9)のコネクタ部(9
b)の両側に連結された第2の補助連結条(16)が固
定用治具(18)で台座(17)に密着して固定される
ため、キャピラリ(19)を通じてコネクタ部(9b)
に振動が加えられても、コネクタ部(9b)の振動は両
側の第2の補助連結条(16)により十分に抑制され、
ワイヤ(12)の他端をコネクタ部(9b)の所定の位
置に確実且つ強固に固着することができる。このため、
ワイヤ(12)を半導体素子(11)上の電極及びター
ミナルパッド(9)に良好に擦り合わせて接続でき、信
頼性の高い良好なワイヤボンディングが可能である。
The connector portion (9) of the terminal pad (9)
Since the second auxiliary connecting strips (16) connected to both sides of (b) are fixed to the pedestal (17) in close contact with the fixing jig (18), the connector section (9b) through the capillary (19).
, Vibration of the connector portion (9b) is sufficiently suppressed by the second auxiliary connecting strips (16) on both sides,
The other end of the wire (12) can be securely and firmly fixed to a predetermined position of the connector (9b). For this reason,
The wires (12) can be satisfactorily rubbed and connected to the electrodes and the terminal pads (9) on the semiconductor element (11), and highly reliable and good wire bonding can be performed.

【0023】その後、樹脂封止体(13)を形成した
後、樹脂封止体(13)から導出した第1の補助連結条
(15)及び第2の補助連結条(16)を第1の連結条
(3)〜第4の連結条(6)並びに外側連結条(10)
及び内側連結条(21)と共に切断除去する。
Thereafter, after forming the resin sealing body (13), the first auxiliary connecting strip (15) and the second auxiliary connecting strip (16) derived from the resin sealing body (13) are connected to the first auxiliary connecting strip (16). Connecting line (3) to fourth connecting line (6) and outer connecting line (10)
And cut and removed together with the inner connecting strip (21).

【0024】本発明の実施の形態では下記の作用効果が
得られる。 [1] 第1の補助連結条(15)又は第2の補助連結
条(16)を固定用治具(18)と台座(17)との間
に挟持して、ダイボンディング、ワイヤボンディングを
行うので、ワイヤボンディング及びワイヤボンディング
時に支持板(8b)又はコネクタ部(9b)が確実に固
定され、半導体素子(11)及びワイヤ(12)を支持
板(8b)及びコネクタ部(9b)に確実に固着するこ
とができる。 [2] ダイボンディング及びワイヤボンディング時の
振動によって支持板(8b)又はコネクタ部(9b)が
移動しないため、ダイボンディング及びワイヤボンディ
ングを所定の位置に行うことができる。 [3] ダイボンディング及びワイヤボンディング後の
支持板(8b)及びコネクタ部(9b)の変形量が小さ
い。 [4] 半田(22)及びワイヤ(12)を所望の厚さ
に形成して、ダイボンディング又はワイヤボンディング
を行うことができる。 [5] 支持板(8b)及びコネクタ部(9b)の振動
を抑制するために補助連結条(15、16)を押さえる
ので、支持板(8b)及びコネクタ部(9b)を大きい
面積で形成する必要がなく、支持板(8b)及びコネク
タ部(9b)の小型化が可能となる。 [6] 信頼性の高い半導体装置を製造することができ
る。
According to the embodiment of the present invention, the following operation and effect can be obtained. [1] The first auxiliary connecting line (15) or the second auxiliary connecting line (16) is sandwiched between the fixing jig (18) and the pedestal (17) to perform die bonding and wire bonding. Therefore, the support plate (8b) or the connector portion (9b) is securely fixed at the time of wire bonding and wire bonding, and the semiconductor element (11) and the wire (12) are securely connected to the support plate (8b) and the connector portion (9b). Can be fixed. [2] Since the support plate (8b) or the connector (9b) does not move due to vibration during die bonding and wire bonding, die bonding and wire bonding can be performed at predetermined positions. [3] The deformation of the support plate (8b) and the connector (9b) after die bonding and wire bonding is small. [4] Die bonding or wire bonding can be performed by forming the solder (22) and the wire (12) to a desired thickness. [5] Since the auxiliary connecting strips (15, 16) are pressed to suppress the vibration of the support plate (8b) and the connector portion (9b), the support plate (8b) and the connector portion (9b) are formed with a large area. It is not necessary, and the size of the support plate (8b) and the connector (9b) can be reduced. [6] A highly reliable semiconductor device can be manufactured.

【0025】本発明の実施の形態は前記の例に限定され
ず、変更が可能である。例えば、ダイボンディング又は
ワイヤボンディングを行ったリードフレーム組立体の半
導体素子並びにアイランド(8)及びターミナルパッド
(9)の一部を封止用樹脂により封止する工程と、封止
用樹脂による封止の後に第1の補助連結条(15)又は
第2の補助連結条(16)とを切断する代わりに、封止
用樹脂による封止の前に第1の補助連結条(15)又は
第2の補助連結条(16)とを切断してもよい。
The embodiment of the present invention is not limited to the above example, but can be modified. For example, a step of sealing a part of the semiconductor element and the island (8) and the terminal pad (9) of the lead frame assembly which has been subjected to die bonding or wire bonding with a sealing resin, and sealing with the sealing resin. Instead of cutting the first auxiliary connecting line (15) or the second auxiliary connecting line (16) after the first auxiliary connecting line (15) or the second auxiliary connecting line (15) or the second auxiliary connecting line (15) before sealing with the sealing resin. May be cut with the auxiliary connecting strip (16).

【0026】[0026]

【発明の効果】本発明によれば、固定用治具と台座との
間に第1の補助連結条又は第2の補助連結条を挟持し
て、ダイボンディング又はワイヤボンディングを行うの
で、一方の連結条から突出するコネクタ部及び他方の連
結条から突出する支持板が振動(移動)することがな
く、コネクタ部及び支持板に十分な機械的強度をもって
ダイボンディングやワイヤボンディングを行うことがで
き、このため、信頼性の高い半導体装置を製造すること
ができる。
According to the present invention, the first auxiliary connecting member or the second auxiliary connecting member is held between the fixing jig and the pedestal to perform die bonding or wire bonding. The connector portion protruding from the connecting strip and the support plate protruding from the other connecting strip do not vibrate (move), and the connector section and the support plate can be subjected to die bonding or wire bonding with sufficient mechanical strength. Therefore, a highly reliable semiconductor device can be manufactured.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 本発明による半導体装置製造用リードフレー
ムの平面図
FIG. 1 is a plan view of a lead frame for manufacturing a semiconductor device according to the present invention.

【図2】 図1の半導体装置製造用リードフレームにダ
イボンディングを行う状態を示す断面図
2 is a sectional view showing a state in which die bonding is performed on the lead frame for manufacturing a semiconductor device in FIG. 1;

【図3】 図1の半導体装置製造用リードフレームに固
着した半導体素子にワイヤボンディングを行う状態を示
す断面図
FIG. 3 is a sectional view showing a state where wire bonding is performed on a semiconductor element fixed to the lead frame for manufacturing a semiconductor device of FIG. 1;

【図4】 図1の半導体装置製造用リードフレームにワ
イヤボンディングを行う状態を示す断面図
FIG. 4 is a sectional view showing a state in which wire bonding is performed on the lead frame for manufacturing a semiconductor device of FIG. 1;

【図5】 従来の半導体装置製造用リードフレームの平
面図
FIG. 5 is a plan view of a conventional lead frame for manufacturing a semiconductor device.

【符号の説明】[Explanation of symbols]

(1)・・第1の外部リード、 (2)・・第2の外部
リード、 (3)・・第1の連結条、 (4)・・第2
の連結条、 (5)・・第3の連結条、 (6)・・第
4の連結条、 (8)・・アイランド、 (8a)・・
第1のネック部、 (8b)・・支持板、 (9)・・
ターミナルパッド、 (9a)・・第2のネック部、
(9b)・・コネクタ部、 (10)・・連結部、
(11)・・半導体素子、 (12)・・ワイヤ、
(13)・・樹脂封止体、 (14)・・半導体装置製
造用リードフレーム、 (15)・・第1の補助連結
条、 (16)・・第2の補助連結条、 (17)・・
台座、 (18)・・固定用治具、 (19)・・キャ
ピラリ、 (20)・・コレット、
(1) First external lead, (2) Second external lead, (3) First connecting strip, (4) Second
(5) ··· Third connection, (6) · · · Fourth connection, (8) · Island, (8a) · · ·
1st neck part, (8b) ... support plate, (9) ...
Terminal pad, (9a) second neck part,
(9b) ··· Connector part, (10) ··· Connecting part,
(11) · · · semiconductor element, (12) · · · wire,
(13) ··· Resin sealing body (14) ··· Lead frame for semiconductor device manufacturing (15) ··· First auxiliary connecting member, (16) ··· Second auxiliary connecting member, (17) ·・
Pedestal, (18) ··· Fixing jig, (19) ·· Capillary, (20) ·· Collet,

───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7,DB名) H01L 23/48 H01L 23/50 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 7 , DB name) H01L 23/48 H01L 23/50

Claims (4)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 互いに対向して且つ並行に配置される二
対の連結条と、該二対の連結条の長さ方向に一定の間隔
をあけて互いに並行に配置され且つ前記二対の連結条を
構成する各一対の連結条を互いに連結する複数の外側連
結条と、前記二対の連結条の一方の対の連結条から他方
の連結条に向かって突出し且つ支持板を有するアイラン
ドと、前記二対の連結条の他方の対の連結条から一方の
連結条に向かって突出し且つコネクタ部を有するターミ
ナルパッドと、前記支持板と内側連結条とを連結する第
1の補助連結条と、前記コネクタ部と前記内側連結条と
を連結する第2の補助連結条とを有する半導体装置製造
用リードフレームを準備する工程と、 前記リードフレームを台座上に配置すると共に、前記第
1の補助連結条又は第2の補助連結条を固定用治具と前
記台座との間に挟持する工程と、 前記支持板又は前記コネクタ部にダイボンディング又は
ワイヤボンディングを行う工程とを含むことを特徴とす
る半導体装置製造用リードフレーム組立体の製造方法。
1. Two pairs of connecting strips facing each other and in parallel with each other, and the two pairs of connecting strips arranged in parallel with each other at a fixed interval in the longitudinal direction of the two pairs of connecting strips. A plurality of outer connecting strips connecting each pair of connecting strips constituting the strip to each other, and an island having a support plate protruding from one pair of connecting strips of the two pairs of connecting strips toward the other connecting strip, A terminal pad protruding from the other pair of connecting strips of the two pairs of connecting strips toward one connecting strip and having a connector part, a first auxiliary connecting strip connecting the support plate and the inner connecting strip, Preparing a semiconductor device manufacturing lead frame having a second auxiliary connecting line connecting the connector portion and the inner connecting line; and arranging the lead frame on a pedestal and performing the first auxiliary connecting operation. Article or second auxiliary connection And a step of performing die bonding or wire bonding to the support plate or the connector portion. A lead frame assembly for manufacturing a semiconductor device, comprising: Production method.
【請求項2】 前記支持板及び前記コネクタ部の両側の
前記内側連結条と前記支持板及び前記コネクタ部とをそ
れぞれ連結して、前記二対の連結条に対し並行に配置さ
れた前記第1の補助連結条と第2の補助連結条とを有す
る前記リードフレームを準備する工程を含む請求項1に
記載の半導体装置製造用リードフレーム組立体の製造方
法。
2. The first connecting member, which connects the inner connecting strips on both sides of the support plate and the connector section to the support plate and the connector section, respectively, and is arranged in parallel with the two pairs of connecting strips. 2. The method for manufacturing a lead frame assembly for manufacturing a semiconductor device according to claim 1, further comprising the step of preparing the lead frame having the auxiliary connecting line and the second auxiliary connecting line.
【請求項3】 前記二対の連結条の一方の対の連結条に
有する第1の連結条と該第1の連結条の内側に配置され
た第2の連結条とを接続する第1の外部リードと、前記
二対の連結条の他方の対の連結条に有する第3の連結条
と該第3の連結条の内側に配置された第4の連結条とを
接続する第2の外部リードとを備え、前記第1の連結条
と第2の連結条との間及び前記第3の連結条と第4の連
結条との間を接続する前記外側連結条を、前記第1の外
部リードと第2の外部リードとに並行且つ交互に配置し
た前記リードフレームを準備する工程を含む請求項1に
記載の半導体装置製造用リードフレーム組立体の製造方
法。
3. A first connecting member for connecting a first connecting member of one pair of connecting members of the two pairs of connecting members and a second connecting member disposed inside the first connecting member. A second external connecting the external lead, a third connecting member included in the other pair of connecting members of the two pairs of connecting members, and a fourth connecting member disposed inside the third connecting member; A lead, and connecting the outer connecting member connecting between the first connecting member and the second connecting member and between the third connecting member and the fourth connecting member with the first external member. 2. The method of manufacturing a lead frame assembly for manufacturing a semiconductor device according to claim 1, further comprising a step of preparing the lead frames arranged in parallel and alternately with a lead and a second external lead.
【請求項4】 ダイボンディング又はワイヤボンディン
グを行った前記リードフレーム組立体の前記半導体素子
並びに前記アイランド及びターミナルパッドの一部を樹
脂封止体により封止する工程と、前記樹脂封止体による
封止の前又は後に前記第1の補助連結条又は第2の補助
連結条とを切断する工程とを含む請求項1に記載の半導
体装置製造用リードフレーム組立体の製造方法。
4. A step of sealing a part of the semiconductor element and the island and the terminal pad of the lead frame assembly which has been subjected to die bonding or wire bonding with a resin sealing body, and sealing with the resin sealing body. Cutting the first auxiliary connection line or the second auxiliary connection line before or after stopping. 4. The method of manufacturing a lead frame assembly for manufacturing a semiconductor device according to claim 1, further comprising:
JP5666697A 1997-03-11 1997-03-11 Method of manufacturing lead frame assembly for manufacturing semiconductor device Expired - Fee Related JP3293757B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5666697A JP3293757B2 (en) 1997-03-11 1997-03-11 Method of manufacturing lead frame assembly for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5666697A JP3293757B2 (en) 1997-03-11 1997-03-11 Method of manufacturing lead frame assembly for manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JPH10256447A JPH10256447A (en) 1998-09-25
JP3293757B2 true JP3293757B2 (en) 2002-06-17

Family

ID=13033739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5666697A Expired - Fee Related JP3293757B2 (en) 1997-03-11 1997-03-11 Method of manufacturing lead frame assembly for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JP3293757B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5634033B2 (en) 2008-08-29 2014-12-03 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー Resin-sealed semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
JPH10256447A (en) 1998-09-25

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