JPH1116934A - Wire-bonding method - Google Patents
Wire-bonding methodInfo
- Publication number
- JPH1116934A JPH1116934A JP9164622A JP16462297A JPH1116934A JP H1116934 A JPH1116934 A JP H1116934A JP 9164622 A JP9164622 A JP 9164622A JP 16462297 A JP16462297 A JP 16462297A JP H1116934 A JPH1116934 A JP H1116934A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- bonding
- semiconductor element
- bonding method
- loop
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/4805—Shape
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
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- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明はワイヤボンディング
方法に係り、特に高低差を有するファーストボンディン
グ位置とセカンドボンディング位置との間にワイヤを配
設するワイヤボンディング方法に関する。一般に、半導
体装置に設けられる半導体素子は、ワイヤにより外部接
続端子となるリードに電気的に接続された構成とされて
いる。このワイヤは、ワイヤボンディング装置を用いて
半導体素子に形成された電極パッドとリードのインナー
リード部との間に配設される。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding method, and more particularly to a wire bonding method in which a wire is provided between a first bonding position having a height difference and a second bonding position. Generally, a semiconductor element provided in a semiconductor device is configured to be electrically connected to leads serving as external connection terminals by wires. This wire is provided between an electrode pad formed on a semiconductor element using a wire bonding apparatus and an inner lead portion of a lead.
【０００２】また、ワイヤは半導体素子に配設された電
極パッド数と略同数配設されるものであり、また近年の
半導体素子の高度化に伴い電極パッド数も増大する傾向
にある。よって、これに伴い電極パッドとインナーリー
ド部との間に配設されるワイヤ数も増大する傾向にあ
る。一方、近年では、半導体装置に対し高い信頼性を実
現すると共に、小型低背化を図ることが望まれている。
従って、ワイヤを配設するワイヤボンディング方法にお
いても、高い信頼性及び小型低背化を可能としうる方法
を採用する必要がある。Further, the number of wires is substantially the same as the number of electrode pads provided on a semiconductor element, and the number of electrode pads tends to increase with the advancement of semiconductor elements in recent years. Accordingly, the number of wires provided between the electrode pad and the inner lead portion tends to increase accordingly. On the other hand, in recent years, it has been desired to achieve high reliability and to reduce the size and height of a semiconductor device.
Therefore, it is necessary to adopt a method capable of realizing high reliability and reduction in size and height also in a wire bonding method for disposing wires.
【０００３】[0003]
【従来の技術】図７及び図８は、従来のワイヤボンディ
ング方法を用いて配設されたワイヤが示されている。図
７は、最も一般的に行われているワイヤボンディング方
法を用いて配設されたワイヤ１を示している。尚、同図
においては、半導体素子２に形成された電極パッド２ａ
とリード３のインナーリード部３ａとの間にワイヤ１を
配設した構成を示している。2. Description of the Related Art FIGS. 7 and 8 show wires arranged by a conventional wire bonding method. FIG. 7 shows the wires 1 arranged using the most commonly used wire bonding method. In FIG. 1, the electrode pad 2a formed on the semiconductor element 2 is shown.
FIG. 2 shows a configuration in which a wire 1 is disposed between the wire 3 and an inner lead portion 3 a of the lead 3.
【０００４】同図に示されるようにワイヤ１を配設する
には、ワイヤボンディング装置に設けられているキャピ
ラリ（ワイヤ１となる金線が挿通されている）を用い、
先ずキャピラリ先端から突出しているワイヤ１にスパー
ク放電を用いてボール部４を形成し、次にボール部４を
電極パッド２ａにキャピラリを用いて押圧し、超音波溶
接法等により接合を行う。As shown in FIG. 1, a wire 1 is provided by using a capillary (a gold wire serving as the wire 1 is inserted) provided in a wire bonding apparatus.
First, a ball portion 4 is formed by using spark discharge on the wire 1 protruding from the tip of the capillary, and then the ball portion 4 is pressed against the electrode pad 2a using a capillary, and joined by an ultrasonic welding method or the like.
【０００５】続いて、キャピラリを上動及び水平移動さ
せてインナーリード部３ａの上部までワイヤ１を引出
し、次にキャピラリをインナーリード部３ａに押圧して
ワイヤ１をステッチボンディングによりインナーリード
部３ａに接合する。図７は、上記のようにワイヤ１を半
導体素子２の電極パッド２ａとリード３のインナーリー
ド部３ａとの間に配設した状態を示している。Subsequently, the capillary 1 is moved upward and horizontally to pull out the wire 1 to the upper portion of the inner lead portion 3a. Then, the capillary is pressed against the inner lead portion 3a, and the wire 1 is stitch-bonded to the inner lead portion 3a. Join. FIG. 7 shows a state in which the wire 1 is disposed between the electrode pad 2a of the semiconductor element 2 and the inner lead portion 3a of the lead 3 as described above.
【０００６】[0006]
【発明が解決しようとする課題】しかるに、従来のワイ
ヤボンディング方法では、ワイヤ１を電極パッド２ａに
接合した後に、ワイヤ１を上方に引き上げた後にインナ
ーリード部３ａに接合する必要があるため、半導体素子
２の上面に対してワイヤ１のループの最上部が高くなっ
てしまう。図７に示す例では、ワイヤ１の最上部は半導
体素子２の上面に対して矢印Ｈで示す寸法だけ高くなっ
てしまう。このため、図７に示すワイヤボンディング方
法では、半導体装置の薄型化を図ることができないとい
う問題点があった。However, in the conventional wire bonding method, it is necessary to join the wire 1 to the electrode pad 2a, then pull the wire 1 upward, and then join the wire 1 to the inner lead portion 3a. The uppermost part of the loop of the wire 1 is higher than the upper surface of the element 2. In the example shown in FIG. 7, the uppermost part of the wire 1 is higher than the upper surface of the semiconductor element 2 by the dimension indicated by the arrow H. Therefore, the wire bonding method shown in FIG. 7 has a problem that the thickness of the semiconductor device cannot be reduced.
【０００７】そこで、従来のワイヤボンディング方法に
おいて半導体装置の薄型化を図るには、ワイヤ１のルー
プを小さくする必要がある。図８は、ワイヤ１のループ
を小さくした例を示している。同図に示すように、従来
のワイヤボンディング方法において、単にワイヤ１のル
ープを小さくすると、電極パッド２ａの位置（ファース
トボンディング位置）と、インナーリード部３ａ（セカ
ンドボンディング位置）とには高低差が有るため、半導
体素子２のエッジ部５とワイヤ１とが接触して短絡して
しまう。Therefore, in order to reduce the thickness of the semiconductor device in the conventional wire bonding method, it is necessary to reduce the loop of the wire 1. FIG. 8 shows an example in which the loop of the wire 1 is reduced. As shown in the drawing, in the conventional wire bonding method, if the loop of the wire 1 is simply reduced, the height difference between the position of the electrode pad 2a (first bonding position) and the inner lead portion 3a (second bonding position) is increased. Therefore, the edge portion 5 of the semiconductor element 2 comes into contact with the wire 1 to cause a short circuit.
【０００８】このように半導体素子２とワイヤ１とが短
絡した場合、半導体素子２は正常が動作を行なうことが
できないおそれがあり、よって製造される半導体装置の
信頼性が低下するという問題点がある。本発明は上記の
点に鑑みてなされたものであり、ワイヤループの低背化
及びワイヤ接続の信頼性向上を図りうるワイヤボンディ
ング方法を提供することを目的とする。When the semiconductor element 2 and the wire 1 are short-circuited in this manner, the semiconductor element 2 may not be able to operate normally, and the reliability of the manufactured semiconductor device is reduced. is there. The present invention has been made in view of the above points, and an object of the present invention is to provide a wire bonding method capable of reducing the height of a wire loop and improving the reliability of wire connection.
【０００９】[0009]
【課題を解決するための手段】上記課題を解決するため
に本発明では、下記の各手段を講じたことを特徴とする
ものである。請求項１記載の発明では、第１の被接続部
材上に設けられた第１のボンディング位置と、この第１
のボンディング位置より低位置に位置する第２の被接続
部材上に設けられた第２のボンディング位置との間にワ
イヤを配設するワイヤボンディング方法において、前記
第１のボンディング位置に前記ワイヤを接合する第１の
接合工程と、前記第１の接合工程の終了後、前記ワイヤ
を少なくとも前記第１の被接続部材から離間する位置ま
で水平方向に引き出すワイヤ引き出し工程と、前記ワイ
ヤ引き出し工程の終了後、前記ワイヤを下方向に降下さ
せ、前記ワイヤと前記第１の被接続部材のエッジとを係
合させることにより前記ワイヤを折り曲げるワイヤ折曲
工程と、前記ワイヤ折曲工程の終了後、前記ワイヤを前
記第１の被接続部材から離間するよう水平方向に引き出
した後、前記ワイヤを前記第２のボンディング位置に接
合する第２の接合工程とを有することを特徴とするもの
である。Means for Solving the Problems In order to solve the above problems, the present invention is characterized by taking the following means. According to the first aspect of the present invention, the first bonding position provided on the first connected member and the first bonding position
A wire bonding method for arranging a wire between a second bonding position provided on a second connected member located at a position lower than the bonding position of the first bonding position, and bonding the wire to the first bonding position. A first bonding step to be performed, a wire drawing step of horizontally pulling out the wire to at least a position separated from the first connected member after the first bonding step, and a wire drawing step after the wire drawing step is completed. A wire bending step of bending the wire by lowering the wire downward and engaging the wire with an edge of the first member to be connected; and after the wire bending step, the wire bending step Is pulled out in the horizontal direction so as to be separated from the first member to be connected, and then the wire is bonded to the second bonding position. It is characterized in that it has a degree.
【００１０】また、請求項２記載の発明では、前記請求
項１記載のワイヤボンディング方法において、前記第１
の被接続部材を半導体素子とし、前記第２の被接続部材
をリードとしてなることを特徴とするものである。上記
の各手段は、次のように作用する。Further, in the invention according to claim 2, in the wire bonding method according to claim 1, the first
Wherein the connected member is a semiconductor element, and the second connected member is a lead. Each of the above means operates as follows.
【００１１】請求項１記載の発明によれば、第１の接合
工程において、第１の被接続部材上に設けられた第１の
ボンディング位置にワイヤが接合される。この第１の接
合工程が終了すると、ワイヤ引き出し工程が実施され、
ワイヤは少なくとも第１の被接続部材から離間する位置
まで水平方向に引き出される。According to the first aspect of the present invention, in the first joining step, the wire is joined to the first bonding position provided on the first connected member. When the first joining step is completed, a wire drawing step is performed,
The wire is pulled out in a horizontal direction at least to a position separated from the first connected member.
【００１２】これにより、ワイヤは第１のボンディング
位置からその高さを殆ど変えずに第１の被接続部材から
離間する位置まで引き出されることとなり、よってワイ
ヤループの高さを小さくすることができる。このワイヤ
引き出し工程が終了すると、続いて実施されるワイヤ折
曲工程において、ワイヤを下方向に降下させる。前記の
ように、第１のボンディング位置と第２の被接続部材と
の間には高低差があるため、この高低差分だけワイヤを
下方向に降下させることができる。As a result, the wire is pulled out from the first bonding position to a position separated from the first connected member without substantially changing its height, and thus the height of the wire loop can be reduced. . When the wire drawing step is completed, the wire is lowered in a subsequent wire bending step. As described above, since there is a height difference between the first bonding position and the second connected member, the wire can be lowered downward by the height difference.
【００１３】このように、ワイヤを下方向に降下させる
ことにより、ワイヤは第１の被接続部材のエッジと係合
し、これによりワイヤはエッジとの係合位置において折
り曲げられる。このように、ワイヤを折り曲げることに
より、ワイヤは折り曲げ部から鋭角に下方に向かうルー
プを形成する。また、本発明ではワイヤを積極的に折り
曲げる構成としているため、ワイヤが湾曲状のループを
形成するようなことはない。As described above, by lowering the wire downward, the wire is engaged with the edge of the first connected member, whereby the wire is bent at the engagement position with the edge. In this manner, by bending the wire, the wire forms a loop that is directed downward from the bent portion at an acute angle. Further, in the present invention, since the wire is positively bent, the wire does not form a curved loop.
【００１４】このワイヤ折曲工程が終了すると、続いて
第２の接合工程が実施され、ワイヤを第１の被接続部材
から離間するよう水平方向に引き出した上で、ワイヤを
第２のボンディング位置に接合する。この第２の接合工
程において、ワイヤを水平方向に引き出すことにより、
ワイヤは第１の被接続部材のエッジから離間し、ワイヤ
と第１の被接続部材とは電気的に絶縁された状態とな
る。When the wire bending step is completed, a second joining step is performed. The wire is pulled out in a horizontal direction so as to be separated from the first connected member. To join. In the second joining step, the wire is pulled out in the horizontal direction,
The wire is separated from the edge of the first connected member, and the wire and the first connected member are electrically insulated.
【００１５】また、第２の接合工程を実施することによ
り、ワイヤと第２のボンディング位置とは接合されるた
め、よって第１の被接続部材と第２の被接続部材とは電
気的に接続された状態となる。この接合状態において、
ワイヤは第１のボンディング位置から略水平方向に引き
出されると共に折り曲げ部から鋭角に下方に向かうルー
プを維持しているため、ワイヤループの低背化を図りつ
つ、ワイヤと第１の被接続部材とを確実に離間させるこ
とができる。In addition, by performing the second bonding step, the wire and the second bonding position are bonded, so that the first connected member and the second connected member are electrically connected. It will be in the state that was done. In this joined state,
Since the wire is pulled out in the substantially horizontal direction from the first bonding position and maintains a loop that is directed downward from the bent portion at an acute angle, the wire and the first connected member are connected while reducing the height of the wire loop. Can be reliably separated.
【００１６】また、請求項２記載の発明のように、第１
の被接続部材を半導体素子とし、また第２の被接続部材
をリードとした構成としてもよい。Further, as in the second aspect of the present invention, the first
The connected member may be a semiconductor element, and the second connected member may be a lead.
【００１７】[0017]
【発明の実施の形態】次に本発明の実施の形態について
図面と共に説明する。図１乃至図６は、本発明の一実施
例であるワイヤボンディング方法を説明するための図で
ある。尚、本実施例では、ワイヤボンディング方法を半
導体製造工程に用いた例について説明するが、本発明の
適用は半導体製造工程に限定されるものではない。Embodiments of the present invention will now be described with reference to the drawings. 1 to 6 are views for explaining a wire bonding method according to one embodiment of the present invention. In this embodiment, an example in which the wire bonding method is used in a semiconductor manufacturing process will be described, but the application of the present invention is not limited to the semiconductor manufacturing process.
【００１８】図１は本実施例に係るワイヤボンディング
方法により配設されたワイヤ１６を示しており、図２は
本実施例に係るワイヤボンディング方法により配設され
たワイヤ１６を内設する半導体装置２０を示しており、
また図３乃至図６はワイヤボンディング方法の各工程を
示している。先ず、各図を用いてワイヤボンディングが
行なわれる半導体装置２０の各構成要素、及びワイヤボ
ンディングに用いるワイヤボンディング装置の構成につ
いて説明する。各図において、１０は半導体素子であ
り、その上部には電極パッド１１が配設されている。こ
の半導体素子１０はステージ２３上に搭載されている。
また、半導体素子１０の近傍にはリード１２の一部を構
成するインナーリード部１３が延在している。FIG. 1 shows a wire 16 provided by the wire bonding method according to the present embodiment, and FIG. 2 shows a semiconductor device in which the wire 16 provided by the wire bonding method according to the present embodiment is provided. 20 is shown,
3 to 6 show each step of the wire bonding method. First, the components of the semiconductor device 20 to which wire bonding is performed and the configuration of a wire bonding apparatus used for wire bonding will be described with reference to the drawings. In each of the drawings, reference numeral 10 denotes a semiconductor element, on which an electrode pad 11 is provided. The semiconductor element 10 is mounted on a stage 23.
In the vicinity of the semiconductor element 10, an inner lead portion 13 constituting a part of the lead 12 extends.
【００１９】通常、上記したリード１２とステージ２３
とは同一のリードフレームから形成されるため、リード
１２とステージ２３との高さは略等しくなっている。よ
って、り、ステージ２３に載置された半導体素子１０の
上面に形成された電極パッド１１は、リード１２に対し
て高所に位置した構成とされている。従って、ワイヤ１
６は、この高低差を有した電極パッド１１とインナーリ
ード部１３（リード１２）との間に配設されることとな
る。Usually, the lead 12 and the stage 23 described above are used.
Are formed from the same lead frame, the heights of the lead 12 and the stage 23 are substantially equal. Therefore, the electrode pad 11 formed on the upper surface of the semiconductor element 10 mounted on the stage 23 is configured to be located higher than the lead 12. Therefore, wire 1
Reference numeral 6 is disposed between the electrode pad 11 having the height difference and the inner lead portion 13 (lead 12).
【００２０】また、図３乃至図６において、１４はキャ
ピラリーでありワイヤボンディング装置の一部を構成す
るものである。このキャピラリー１４は、内部にワイヤ
１６となる金細線を挿通した構成とされており、図示し
ない移動装置により自在に移動しうる構成とされてい
る。また、このキャピラリー１４には超音波振動子が接
続されており、この超音波振動子が発生する超音波振動
により、ワイヤ１６を被接続部材（本実施例の場合に
は、電極パッド１１及びインナーリード部１３）に超音
波溶接しうる構成となっている。In FIGS. 3 to 6, reference numeral 14 denotes a capillary which constitutes a part of a wire bonding apparatus. The capillary 14 has a configuration in which a gold wire serving as the wire 16 is inserted therein, and is configured to be freely movable by a moving device (not shown). An ultrasonic transducer is connected to the capillary 14, and the ultrasonic vibration generated by the ultrasonic transducer causes the wire 16 to connect the wire 16 to the connected member (in the case of the present embodiment, the electrode pad 11 and the inner pad 11). It is configured to be ultrasonically welded to the lead portion 13).
【００２１】次に図１を用い、本実施例に係るワイヤボ
ンディング方法により配設されたワイヤ１６の特徴につ
いて説明する。本実施例に係るワイヤボンディング方法
を用いて配設されたワイヤ１６は、電極パッド１１から
インナーリード部１３に至る途中位置に折り曲げ部１５
を有しており、電極パッド１１から折り曲げ部１５まで
の間は略水平なワイヤループを形成し、この折り曲げ部
１５で鋭角的に折り曲げられてインナーリード部１３に
至るワイヤーループを形成している。また、折り曲げ部
１５は、半導体素子１０のエッジ部１７（角部）より外
側位置となるよう設けられている。Next, the characteristics of the wires 16 provided by the wire bonding method according to this embodiment will be described with reference to FIG. The wire 16 provided by using the wire bonding method according to the present embodiment has a bent portion 15 at an intermediate position from the electrode pad 11 to the inner lead portion 13.
A substantially horizontal wire loop is formed between the electrode pad 11 and the bent portion 15, and a wire loop that is bent sharply at the bent portion 15 and reaches the inner lead portion 13 is formed. . The bent portion 15 is provided at a position outside the edge portion 17 (corner portion) of the semiconductor element 10.
【００２２】ワイヤ１６が上記のようなワイヤループを
形成することにより、ワイヤループの低背化を図ること
ができ、よってワイヤ１６を内設する半導体装置２０に
おいても小型低背化を図ることができる。また、折り曲
げ部１５はエッジ部１７より外側に位置しているため、
ワイヤ１６と半導体素子１０とが接触することはなく、
よってワイヤ１６と半導体素子１０との絶縁を確実に取
ることができる。Since the wire 16 forms the above-described wire loop, the height of the wire loop can be reduced, so that the semiconductor device 20 in which the wire 16 is provided can be reduced in size and height. it can. Also, since the bent portion 15 is located outside the edge portion 17,
There is no contact between the wire 16 and the semiconductor element 10,
Therefore, insulation between the wire 16 and the semiconductor element 10 can be ensured.
【００２３】続いて、図３乃至図６を用い、上記ワイヤ
ループを形成するためのワイヤボンディング方法につい
て説明する。電極パッド１１とインナーリード部１３と
をワイヤ１６で接続するには、予めキャピラリー１４に
挿通されたワイヤ１６の先端部にスパーク放電によりボ
ール部１８を形成した上で、キャピラリー１４を移動装
置によりインナーリード部１３に近接するよう移動し、
図３に示されるようにボール部１８を電極パッド１１に
押圧する。Next, a wire bonding method for forming the wire loop will be described with reference to FIGS. In order to connect the electrode pad 11 and the inner lead portion 13 with the wire 16, a ball portion 18 is formed at the tip of the wire 16 previously inserted into the capillary 14 by spark discharge, and then the capillary 14 is moved to the inner portion by a moving device. Move so as to be close to the lead portion 13,
The ball portion 18 is pressed against the electrode pad 11 as shown in FIG.
【００２４】続いて、超音波振動子が超音波振動を発生
させ、これによりキャピラリー１４はボール部１８を第
１の被接続部材となる電極パッド１１に超音波溶接す
る。これにより、ワイヤ１６は電極パッド１１に接合さ
れる（以上の処理を第１の接合工程という）。上記のよ
うに電極パッド１１にワイヤ１６が接合されると、図４
に示されるように、キャピラリー１４は半導体素子１０
の上面に沿って略水平方向に移動する。また、これに伴
いワイヤ１６も図中矢印Ｘで示す方向に引き出される
が、この際、ワイヤ１６は少なくとも半導体素子１０の
エッジ部１７から離間する位置まで水平方向に引き出さ
れるよう構成されている（以上の処理をワイヤ引き出し
工程という）。Subsequently, the ultrasonic vibrator generates ultrasonic vibration, whereby the capillary 14 ultrasonically welds the ball portion 18 to the electrode pad 11 serving as the first connected member. Thereby, the wire 16 is bonded to the electrode pad 11 (the above processing is referred to as a first bonding step). When the wire 16 is bonded to the electrode pad 11 as described above, FIG.
As shown in FIG. 2, the capillary 14 is
Move in a substantially horizontal direction along the upper surface of the. In addition, the wire 16 is also pulled out in the direction indicated by the arrow X in the drawing, and at this time, the wire 16 is configured to be drawn out at least to a position separated from the edge portion 17 of the semiconductor element 10 ( The above processing is referred to as a wire drawing step).
【００２５】このように、ワイヤ１６を電極パッド１１
との接合位置からその高さを殆ど変えずにエッジ部１７
から離間する位置まで水平方向に引き出す構成とするこ
とにより、ワイヤ１６のワイヤループの高さを小さくす
ることができる（図４に、ワイヤループの高さを矢印ｈ
で示す）。上記のようにワイヤ１６がエッジ部１７から
離間する位置まで引き出されると、続いてキャピラリ１
４は図５に示されるように下方向（図中、矢印Ｙで示
す）に移動され、これに伴いワイヤ１６も矢印Ｙ方向に
下降する。尚、前記のように電極パッド１１とインナー
リード部１３（リード１２）との間には高低差があるた
め、この高低差分だけワイヤ１６を下方向に降下させる
ことができる。As described above, the wire 16 is connected to the electrode pad 11.
Edge portion 17 with almost no change in height from the joint position with
The height of the wire loop of the wire 16 can be reduced by using a configuration in which the wire loop is pulled out to a position away from the wire 16 (in FIG. 4, the height of the wire loop is indicated by an arrow h).
). When the wire 16 is pulled out to a position separated from the edge portion 17 as described above, subsequently, the capillary 1
4 is moved downward (indicated by an arrow Y in the figure) as shown in FIG. 5, and accordingly, the wire 16 also descends in the arrow Y direction. Since there is a height difference between the electrode pad 11 and the inner lead portion 13 (lead 12) as described above, the wire 16 can be lowered downward by the height difference.
【００２６】ところで、前記したようにワイヤ１６は、
ワイヤ引き出し工程を実施することにより、半導体素子
１０のエッジ部１７からＸ方向に離間する位置まで延出
している。従って、この状態のワイヤ１６を下降させる
と、ワイヤ１６は半導体素子１０のエッジ部１７と係合
する。図５は、ワイヤ１６とエッジ部１７とが係合した
状態を示している。By the way, as described above, the wire 16
By performing the wire drawing step, the semiconductor element 10 extends from the edge portion 17 to a position separated in the X direction. Therefore, when the wire 16 in this state is lowered, the wire 16 engages with the edge portion 17 of the semiconductor element 10. FIG. 5 shows a state in which the wire 16 and the edge portion 17 are engaged.
【００２７】このように、ワイヤ１６とエッジ部１７と
が係合することにより、金線により構成されたワイヤ１
６は折曲され、よってワイヤ１６がエッジ１７と係合し
た位置には折り曲げ部１５が形成される。また、上記の
ようにワイヤ１６を折り曲げることにより、ワイヤ１６
は折り曲げ部１５から鋭角に下方に向かうワイヤループ
を形成する（以上の処理をワイヤ折曲工程という）。As described above, when the wire 16 and the edge portion 17 are engaged with each other, the wire 1 made of a gold wire is used.
6 is bent, so that a bent portion 15 is formed at a position where the wire 16 is engaged with the edge 17. Also, by bending the wire 16 as described above, the wire 16
Forms a wire loop going downward from the bent portion 15 at an acute angle (the above process is referred to as a wire bending step).
【００２８】このワイヤ折曲工程において、本実施例で
はワイヤ１６を下降させることにより、ワイヤ１６を積
極的に折り曲げる構成としているため、従来のようにワ
イヤ１６が湾曲状のループを形成するようなことはな
く、よってワイヤループの低背化を図ることができる。
上記のようにワイヤ１６が折り曲げられると、続いてキ
ャピラリ１４を図５における矢印Ｘ方向に移動させるこ
とにより、ワイヤ１６を半導体素子１０から離間するよ
う水平方向に引き出し、その上で、図６に示されるよう
にワイヤ１６を第２のボンディング位置となるインナー
リード部１３に接合する（以上の処理を第２の接合工程
という）。In the wire bending step, in the present embodiment, the wire 16 is lowered so that the wire 16 is positively bent, so that the wire 16 forms a curved loop as in the prior art. Therefore, the height of the wire loop can be reduced.
When the wire 16 is bent as described above, subsequently, the capillary 14 is moved in the direction of the arrow X in FIG. 5 so that the wire 16 is pulled out in the horizontal direction so as to be separated from the semiconductor element 10, and then, as shown in FIG. As shown, the wire 16 is bonded to the inner lead portion 13 at the second bonding position (the above processing is referred to as a second bonding step).
【００２９】このように、第２の接合工程において、ワ
イヤ１６を図５に示されるエッジ部１７と係合した状態
から水平方向に引き出すことにより、ワイヤ１６はエッ
ジ部１７から離間し、よってワイヤ１６と半導体素子１
０とは電気的に絶縁された状態となる。また、第２の接
合工程を実施することにより、ワイヤ１６とインナーリ
ード部１３とは接合されるため、よって半導体素子１０
とリード１２はワイヤ１６を介して電気的に接続された
状態となる。As described above, in the second joining step, the wire 16 is pulled out in the horizontal direction from the state in which the wire 16 is engaged with the edge portion 17 shown in FIG. 16 and semiconductor element 1
0 is an electrically insulated state. Further, by performing the second bonding step, the wire 16 and the inner lead portion 13 are bonded, so that the semiconductor element 10
And the lead 12 are electrically connected via the wire 16.
【００３０】この第２の接合工程が終了した時点におい
ても、図６に示されるように、ワイヤ１６は電極パッド
１１から略水平方向に引き出されると共に折り曲げ部１
５から鋭角に下方に向かうループ形状を維持しているた
め、ワイヤループの低背化を図りつつ、かつ、ワイヤ１
６と半導体素子１０との絶縁を確実に行なうことができ
る。At the time when the second bonding step is completed, as shown in FIG. 6, the wire 16 is pulled out from the electrode pad 11 in a substantially horizontal direction and the bent portion 1 is formed.
5 is maintained at an acute angle downward, so that the height of the wire loop is reduced and the wire 1
6 and the semiconductor element 10 can be reliably insulated.
【００３１】図２は、上記したワイヤボンディング方法
により配設されたワイヤ１６を内設した半導体装置２０
を示している。半導体装置２０は、大略すると半導体素
子１０，リード１２，ワイヤ１６，封止樹脂２１等によ
り構成されている。半導体素子１０は、ステージ２３上
に搭載されている。また、半導体素子１０の上面に形成
された電極パッド１１とインナーリード部１３との間に
は、上記したワイヤボンディング方法によりワイヤ１６
が配設されている。FIG. 2 shows a semiconductor device 20 having wires 16 provided therein by the above-described wire bonding method.
Is shown. The semiconductor device 20 generally includes a semiconductor element 10, leads 12, wires 16, sealing resin 21, and the like. The semiconductor element 10 is mounted on the stage 23. In addition, a wire 16 is provided between the electrode pad 11 formed on the upper surface of the semiconductor element 10 and the inner lead portion 13 by the above-described wire bonding method.
Are arranged.
【００３２】また、封止樹脂２１は半導体素子１０及び
ワイヤ１６を内部に封止するよう配設されており、半導
体素子１０及びワイヤ１６を保護する機能を奏してい
る。従って、封止樹脂２１は少なくともワイヤ１６を覆
うように配設する必要があり、ワイヤのループが高いと
これに伴い封止樹脂２１の厚さも大となり、半導体装置
２０が大型化してしまう。The sealing resin 21 is disposed so as to seal the semiconductor element 10 and the wire 16 therein, and has a function of protecting the semiconductor element 10 and the wire 16. Therefore, the sealing resin 21 needs to be provided so as to cover at least the wire 16. If the loop of the wire is high, the thickness of the sealing resin 21 is also increased, and the semiconductor device 20 is enlarged.
【００３３】しかるに、上記したように本実施例に係る
ワイヤボンディング方法を用いることにより、ワイヤ１
６のワイヤループは低背化が図られている。従って、封
止樹脂２１の厚さを小さくすることが可能となり、よっ
て半導体装置２０の低背化を図ることができる。また、
半導体素子１０とワイヤ１６が短絡するとがないため、
半導体装置２０としての信頼性を向上させることができ
る。However, by using the wire bonding method according to the present embodiment as described above,
The wire loop of No. 6 has a low profile. Therefore, the thickness of the sealing resin 21 can be reduced, and the height of the semiconductor device 20 can be reduced. Also,
Since there is no short circuit between the semiconductor element 10 and the wire 16,
The reliability as the semiconductor device 20 can be improved.
【００３４】尚、本実施例に係るワイヤボンディング方
法により配設されたワイヤの適用は、樹脂パッケージに
限定されるものではなく、セラミックパッケージ等の他
のパッケージ構造を有する半導体装置に対しても適用で
きるものである。The application of the wires provided by the wire bonding method according to the present embodiment is not limited to a resin package, but is also applicable to a semiconductor device having another package structure such as a ceramic package. You can do it.
【００３５】[0035]
【発明の効果】上述の如く本発明によれば、第１の接合
工程，ワイヤ引き出し工程，ワイヤ折曲工程，及び第２
の接合工程が終了した状態において、ワイヤは第１のボ
ンディング位置から略水平方向に引き出されると共に折
り曲げ位置から鋭角に下方に向かうループを維持するた
め、ワイヤループの低背化を図りつつ、ワイヤと第１の
被接続部材とを確実に離間させることができる。As described above, according to the present invention, the first joining step, the wire drawing step, the wire bending step, and the second
In the state where the bonding step has been completed, the wire is pulled out substantially in the horizontal direction from the first bonding position and maintains a loop that is directed downward from the bending position at an acute angle. The first connected member can be reliably separated from the first connected member.
【図１】本発明の一実施例によるワイヤボンディング方
法を用いて配設されたワイヤループを示す図である。FIG. 1 is a view showing a wire loop arranged by using a wire bonding method according to an embodiment of the present invention.
【図２】本発明の一実施例によるワイヤボンディング方
法を用いて配設されたワイヤを内装した半導体装置を示
す断面図である。FIG. 2 is a cross-sectional view showing a semiconductor device in which wires arranged by using a wire bonding method according to an embodiment of the present invention are mounted.
【図３】本発明の一実施例によるワイヤボンディング方
法を説明するための図であり、第１の接合工程を示す図
である。FIG. 3 is a view for explaining a wire bonding method according to one embodiment of the present invention, and is a view showing a first bonding step.
【図４】本発明の一実施例によるワイヤボンディング方
法を説明するための図であり、ワイヤ引き出し工程を示
す図である。FIG. 4 is a view for explaining a wire bonding method according to an embodiment of the present invention, and is a view showing a wire drawing step.
【図５】本発明の一実施例によるワイヤボンディング方
法を説明するための図であり、ワイヤ折曲工程を示す図
である。FIG. 5 is a view for explaining a wire bonding method according to an embodiment of the present invention, and is a view showing a wire bending step.
【図６】本発明の一実施例によるワイヤボンディング方
法を説明するための図であり、第２の接合工程を示す図
である。FIG. 6 is a view for explaining a wire bonding method according to an embodiment of the present invention, and is a view showing a second bonding step.
【図７】従来のワイヤボンディング方法の一例を説明す
るための図である（その１）。FIG. 7 is a diagram for explaining an example of a conventional wire bonding method (part 1).
【図８】従来のワイヤボンディング方法の一例を説明す
るための図である（その２）。FIG. 8 is a diagram for explaining an example of a conventional wire bonding method (part 2).
１０ 半導体素子 １１ 電極パッド １２ リード １３ インナーリード部 １４ キャピラリ １５ 折り曲げ位置 １６ ワイヤ １７ エッジ部 ２０ 半導体装置 ２１ 封止樹脂 ２３ ステージ DESCRIPTION OF SYMBOLS 10 Semiconductor element 11 Electrode pad 12 Lead 13 Inner lead part 14 Capillary 15 Bending position 16 Wire 17 Edge part 20 Semiconductor device 21 Sealing resin 23 Stage
Claims (2)
ボンディング位置と、該第１のボンディング位置より低
位置に位置する第２の被接続部材上に設けられた第２の
ボンディング位置との間にワイヤを配設するワイヤボン
ディング方法において、 前記第１のボンディング位置に前記ワイヤを接合する第
１の接合工程と、 前記第１の接合工程の終了後、前記ワイヤを少なくとも
前記第１の被接続部材から離間する位置まで水平方向に
引き出すワイヤ引き出し工程と、 前記ワイヤ引き出し工程の終了後、前記ワイヤを下方向
に降下させ、前記ワイヤと前記第１の被接続部材のエッ
ジとを係合させることにより前記ワイヤを折り曲げるワ
イヤ折曲工程と、 前記ワイヤ折曲工程の終了後、前記ワイヤを前記第１の
被接続部材から離間するよう水平方向に引き出した後、
前記ワイヤを前記第２のボンディング位置に接合する第
２の接合工程とを有することを特徴とするワイヤボンデ
ィング方法。1. A first bonding position provided on a first connected member, and a second bonding provided on a second connected member positioned lower than the first bonding position. In a wire bonding method of arranging a wire between the first bonding position and the first bonding position, after the first bonding step, the wire is connected to at least the first bonding position. A wire pulling-out step of pulling out the wire in a horizontal direction to a position separated from the first connected member, and after the wire drawing-out step is completed, the wire is lowered downward, and the wire and the edge of the first connected member are separated from each other. A wire bending step of bending the wire by engaging the wire, and after the wire bending step, horizontally moving the wire away from the first connected member. After the drawer in direction,
A second bonding step of bonding the wire to the second bonding position.
において、 前記第１の被接続部材を半導体素子とし、前記第２の被
接続部材をリードとしてなることを特徴とするワイヤボ
ンディング方法。2. The wire bonding method according to claim 1, wherein the first member to be connected is a semiconductor element, and the second member to be connected is a lead.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9164622A JPH1116934A (en) | 1997-06-20 | 1997-06-20 | Wire-bonding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9164622A JPH1116934A (en) | 1997-06-20 | 1997-06-20 | Wire-bonding method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1116934A true JPH1116934A (en) | 1999-01-22 |
Family
ID=15796706
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9164622A Withdrawn JPH1116934A (en) | 1997-06-20 | 1997-06-20 | Wire-bonding method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1116934A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100752664B1 (en) | 2006-06-15 | 2007-08-29 | 삼성전자주식회사 | Semiconductor device having an wire loop, method of forming the same and wire bonding system for forming the wire loop |
| JP2008062565A (en) * | 2006-09-08 | 2008-03-21 | Alps Electric Co Ltd | Thermal head and its wire bonding method |
| JP2008160149A (en) * | 2003-06-27 | 2008-07-10 | Shinkawa Ltd | Semiconductor device |
| WO2009076048A1 (en) * | 2007-12-05 | 2009-06-18 | Kulicke And Soffa Industries, Inc. | Method of forming a wire loop including a bend |
| JP2012204558A (en) * | 2011-03-25 | 2012-10-22 | Citizen Electronics Co Ltd | Wire bonding structure |
-
1997
- 1997-06-20 JP JP9164622A patent/JPH1116934A/en not_active Withdrawn
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008160149A (en) * | 2003-06-27 | 2008-07-10 | Shinkawa Ltd | Semiconductor device |
| KR100752664B1 (en) | 2006-06-15 | 2007-08-29 | 삼성전자주식회사 | Semiconductor device having an wire loop, method of forming the same and wire bonding system for forming the wire loop |
| JP2008062565A (en) * | 2006-09-08 | 2008-03-21 | Alps Electric Co Ltd | Thermal head and its wire bonding method |
| WO2009076048A1 (en) * | 2007-12-05 | 2009-06-18 | Kulicke And Soffa Industries, Inc. | Method of forming a wire loop including a bend |
| JP2012204558A (en) * | 2011-03-25 | 2012-10-22 | Citizen Electronics Co Ltd | Wire bonding structure |
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