JPH0590320A - Ball type wire bonding method - Google Patents

Ball type wire bonding method

Info

Publication number
JPH0590320A
JPH0590320A JP3249520A JP24952091A JPH0590320A JP H0590320 A JPH0590320 A JP H0590320A JP 3249520 A JP3249520 A JP 3249520A JP 24952091 A JP24952091 A JP 24952091A JP H0590320 A JPH0590320 A JP H0590320A
Authority
JP
Japan
Prior art keywords
capillary tool
wire
semiconductor chip
gold wire
axis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3249520A
Other languages
Japanese (ja)
Inventor
Sadahito Nishida
貞仁 西田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP3249520A priority Critical patent/JPH0590320A/en
Publication of JPH0590320A publication Critical patent/JPH0590320A/en
Pending legal-status Critical Current

Links

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H01L2224/78302—Shape
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H—ELECTRICITY
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    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/788—Means for moving parts
    • H01L2224/78821—Upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/78822—Rotational mechanism
    • H01L2224/78823—Pivoting mechanism
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

Abstract

PURPOSE:To reduce a projection height size H of a metallic wire from a first junction surface in a method for wire-bonding between a first junction part and a second junction part by a fine metallic wire such as a gold wire. CONSTITUTION:A capillary tool 1 is arranged on a tilt so that an axis 1a tilts by a proper angle theta toward a second junction part from a first junction part, and a ball part 5a is formed at a lower end of a gold wire 5 which is passed through the capillary tool 1. Then, the capillary tool 1 descends downward and joins the ball part 5a to the first junction part. After the capillary tool 1 is ascended on a tilt along the axis 1a, it is descended toward the second junction part.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は、電子部品の製造に際し
て、金線等の細い金属線を使用してワイヤーボンディン
グを行うようにした方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for wire bonding using a thin metal wire such as a gold wire when manufacturing an electronic component.

【０００２】[0002]

【従来の技術】一般に、従来におけるボール式のワイヤ
ーボンディング方法は、良く知られているように、 ．図７に示すように、キャピラリーツールＡにおける
軸線を、リードフレームにおけるアイランド部Ｂの上面
にダイボンディングした半導体チップＣの上面に対して
垂直にし、このキャピラリーツールＡ内に挿通した金線
Ｄの下端に、ボール部Ｄ1 を、スパーク放電又は火炎ト
ーチ等の加熱によって形成する。 ．次に、前記キャピラリーツールＡを、図８に示すよ
うに、第１の接合部であるところの前記半導体チップＣ
に向かって当該キャピラリーツールＡの軸線に沿って真
っ直ぐ下向きに下降動することにより、前記金線Ｄの下
端におけるボール部Ｄ1 を、前記半導体チップＣの上面
に押圧して、当該ボール部Ｄ1 を半導体チップＣに対し
て接合する。 ．次いで、前記キャピラリーツールＡを、図９に示す
ように、当該キャピラリーツールＡの軸線に沿って真っ
直ぐ上向きに上昇動し、これに続いて、第２の接合部で
あるところの前記半導体チップＣに対するリード端子Ｅ
の上方まで水平移動したのち、このリード端子Ｅに向か
って下降動することにより、前記金線Ｄの他端を当該リ
ード端子Ｅに対して接合する。 ．そして、前記キャピラリーツールＡを、前記金線Ｄ
を切断しながら元の位置に戻して、これに挿通した金線
Ｄの下端にボール部Ｄ1 を形成する。と言う順序で行う
ようにしている。2. Description of the Related Art Generally, as is well known, the conventional ball-type wire bonding method is as follows. As shown in FIG. 7, the axis line of the capillary tool A is perpendicular to the upper surface of the semiconductor chip C die-bonded to the upper surface of the island portion B of the lead frame, and the lower end of the gold wire D inserted into the capillary tool A. Then, the ball portion D 1 is formed by heating a spark discharge or a flame torch. ． Next, as shown in FIG. 8, the capillary tool A is attached to the semiconductor chip C which is a first joint portion.
The ball portion D 1 at the lower end of the gold wire D is pressed against the upper surface of the semiconductor chip C by downwardly moving straight down along the axis of the capillary tool A toward the ball portion D 1 Are bonded to the semiconductor chip C. ． Next, as shown in FIG. 9, the capillary tool A is vertically moved upward in a straight line along the axis of the capillary tool A, and subsequently, with respect to the semiconductor chip C which is the second bonding portion. Lead terminal E
After being horizontally moved to the upper side of, the lower end is moved toward the lead terminal E, so that the other end of the gold wire D is joined to the lead terminal E. ． Then, the capillary tool A is connected to the gold wire D.
While cutting, it is returned to the original position, and the ball portion D 1 is formed at the lower end of the gold wire D inserted therethrough. I try to do it in that order.

【０００３】[0003]

【発明が解決しようとする課題】しかし、この従来にお
けるボール式ワイヤーボンディング方法は、キャピラリ
ーツールＡ内に挿通した金線Ｄの下端にボール部Ｄ1 を
スパーク放電又は火炎トーチ等の加熱によって形成する
ときにおいて、金線Ｄのうちボール部Ｄ1 に繋がる部分
が、前記加熱に際しての熱を受けることによって、適宜
長さ（Ｓ）にわたって再結晶して硬く曲がり難い組織に
変化するにもかかわらず、キャピラリーツールＡを、前
記ボール部Ｄ1 を半導体チップＣに対して接合したあと
において、当該キャピラリーツールＡの軸線に沿って真
っ直ぐ上向きに上昇動するようにしている。However, in this conventional ball-type wire bonding method, the ball portion D 1 is formed at the lower end of the gold wire D inserted in the capillary tool A by spark discharge or heating by a flame torch or the like. At this time, although the portion of the gold wire D connected to the ball portion D 1 is recrystallized over a suitable length (S) to change into a hard and hard-to-bend structure by receiving heat during the heating, After bonding the ball portion D 1 to the semiconductor chip C, the capillary tool A is allowed to move straight upward along the axis of the capillary tool A.

【０００４】このため、前記半導体チップＣとをリード
端子Ｅとの間を繋ぐ金線Ｄは、当該金線Ｄのうち前記の
ように硬く曲がり難くなるように組織が変化する適宜長
さ（Ｓ）の部分が半導体チップＣの上面に対して垂直に
なり、この適宜長さ（Ｓ）から以降の部分が垂直の状態
から下向きに大きく湾曲するような形態になるから、前
記半導体チップＣの上面から金線Ｄのうち最も高い部分
までの高さ寸法（Ｈ）が、可成り高くなるのである。Therefore, the gold wire D connecting the semiconductor chip C and the lead terminal E has an appropriate length (S) which changes the structure so that the gold wire D is hard and difficult to bend as described above. ) Is perpendicular to the upper surface of the semiconductor chip C, and from this appropriate length (S), the subsequent parts are curved downward from the vertical state. The height dimension (H) from to the highest part of the gold wire D becomes considerably high.

【０００５】従って、金線の使用量が多くなるから、コ
ストのアップの招来すると言う問題があり、しかも、前
記半導体チップＣの部分を、合成樹脂製のモールド部に
てパッケージするようにした電子部品の場合には、その
モールド部の高さ寸法を、前記半導体チップＣの上面か
ら金線４のうち最も高い部分までの高さ寸法（Ｈ）が高
くなることに追従して増大するようにしなければならな
いから、モールドパッケージ型電子部品の大型化を招来
すると言う問題があった。Therefore, since the amount of gold wire used is large, there is a problem that the cost is increased, and moreover, the part of the semiconductor chip C is packaged by a mold part made of synthetic resin. In the case of a component, the height dimension of the molded part is increased in accordance with the increase in the height dimension (H) from the upper surface of the semiconductor chip C to the highest portion of the gold wire 4. Therefore, there is a problem in that the size of the mold package type electronic component is increased.

【０００６】本発明は、これらの問題を解消できるよう
にしたボール式のワイヤーボンディング方法を提供する
ことを技術的課題とするものである。It is a technical object of the present invention to provide a ball-type wire bonding method capable of solving these problems.

【０００７】[0007]

【課題を解決するための手段】この技術的課題を達成す
るため本発明は、キャピラリーツールを、その軸線が第
１の接合部から第２の接合部に向かって斜め上向きに適
宜角度だけ傾斜するように傾斜状に構成し、このキャピ
ラリーツールに挿通し金線等の金属線の下端にボール部
を形成すると、前記キャピラリーツールを略真っ直ぐ下
向きに下降動して、前記金属線におけるボール部を前記
第１の接合部に接合し、次いで、前記キャピラリーツー
ルを、その傾斜状の軸線に沿って上昇動したのち、第２
の接合部に向かって下降動するようにした。In order to achieve this technical object, the present invention provides a capillary tool whose axis extends obliquely upward from the first joint to the second joint by an appropriate angle. When the ball portion is formed at the lower end of a metal wire such as a gold wire that is inserted in the capillary tool as described above, the capillary tool descends in a substantially straight downward direction, and the ball portion of the metal wire is After joining to the first joining portion, the capillary tool is then moved upward along its inclined axis and then to the second joining portion.
It was designed to move downward toward the joint.

【０００８】[0008]

【作 用】このように、キャピラリーツールを、その軸
線が第１の接合部から第２の接合部に向かって斜め上向
きに適宜角度だけ傾斜するように傾斜状に構成し、この
キャピラリーツールの下降動によって、金属線における
ボール部を第１の接合部に接合したのち、前記キャピラ
リーツールを、当該キャピラリーツールにおける傾斜状
の軸線に沿って上昇動するようにすると、前記金属線の
うちボール部に繋がっていて硬く曲がり難くなる組織に
変化する部分は、前記従来のように、第１の接合部にお
ける面に対して垂直になることなく、第１の接合部から
第２の接合部に向かって適宜角度だけ傾斜することにな
る。[Operation] In this way, the capillary tool is constructed so as to be inclined so that its axis line is inclined obliquely upward from the first joint portion toward the second joint portion by an appropriate angle, and the capillary tool is lowered. When the ball portion of the metal wire is joined to the first joint portion by the movement, the capillary tool is moved upward along the inclined axis of the capillary tool. The portion that changes into a tissue that is connected and hard and difficult to bend is not perpendicular to the surface of the first joint portion as in the conventional case, and is directed from the first joint portion to the second joint portion. It will be inclined by an appropriate angle.

【０００９】これに加えて、金属線のうち前記曲がり難
くなる組織に変化する部分よりも先で下向きに湾曲する
部分は、前記曲がり難くなる組織に変化する部分が前記
のように第２の接合部の方向に傾斜していることによ
り、更に下向き方向に湾曲し易くなるから、第１の接合
部から金属線のうち最も高い部分までの高さ寸法は、前
記従来の場合によりも大幅に低くなるのである。In addition to this, in the portion of the metal wire that bends downward before the portion that changes to the structure that becomes difficult to bend, the portion that changes to the structure that becomes difficult to bend becomes the second bonding as described above. The inclination in the direction of the portion facilitates further downward bending, so the height dimension from the first joint to the highest portion of the metal wire is much lower than in the conventional case. It will be.

【００１０】[0010]

【発明の効果】従って、本発明によると、ワイヤーボン
ディングに際して、金線等の金属線の使用量を節減する
ことができるから、ワイヤーボンディングに要するコス
トを低減できるのであり、また、合成樹脂製のモールド
部にてパッケージするようにした電子部品の場合には、
そのモールド部の高さ寸法を低くして、その小型化を図
ることができる効果を有する。According to the present invention, therefore, the amount of metal wire used such as gold wire can be reduced during wire bonding, so that the cost required for wire bonding can be reduced. In the case of electronic parts that are packaged in the mold part,
There is an effect that the height dimension of the mold portion can be reduced and the size can be reduced.

【００１１】[0011]

【実施例】以下、本発明の実施例について説明する。図
において、符号１は、リードフレームにおけるアイラン
ド部２の上面にダイボンディングした半導体チップ３の
上方に配設したキャピラリーツールを示し、このキャピ
ラリーツール１は、その軸線１ａが第１の接合部である
ところの前記半導体チップ３から当該半導体チップ３に
対するリード端子４の方向に向かって斜め上向きに適宜
角度θだけ傾斜するように傾斜状に配設する。EXAMPLES Examples of the present invention will be described below. In the figure, reference numeral 1 indicates a capillary tool disposed above a semiconductor chip 3 die-bonded to the upper surface of an island portion 2 in a lead frame, and the axis 1a of the capillary tool 1 is a first joint portion. However, the semiconductor chip 3 is arranged so as to be inclined obliquely upward from the semiconductor chip 3 toward the lead terminal 4 with respect to the semiconductor chip 3 by an appropriate angle θ.

【００１２】そして、前記キャピラリーツール１内に挿
通した金線５の先端部に、図１に示すように、ボール部
５ａを、スパーク放電又は火炎トーチ等の加熱によって
形成すると、前記キャピラリーツール１は、図２に示す
ように、真っ直ぐ下向きに下降動して、前記のボール部
５ａを半導体チップ３に押圧することにより、当該ボー
ル部５ａを半導体チップ３に対して接合する。Then, as shown in FIG. 1, a ball portion 5a is formed at the tip of the gold wire 5 inserted into the capillary tool 1 by spark discharge or heating of a flame torch or the like. 2, as shown in FIG. 2, the ball portion 5a is moved straight downward to press the ball portion 5a against the semiconductor chip 3 to bond the ball portion 5a to the semiconductor chip 3.

【００１３】なお、この場合において、前記の押圧を行
いながら前記キャピラリーツール１を、前記ボール部５
ａの中心を通る鉛直線６を中心としてその回りに適宜角
度だけ往復旋回するように構成することにより、前記ボ
ール部５ａを半導体チップ３に対して接合する場合にお
ける接合性を向上することができる。次いで、前記キャ
ピラリーツール１を、当該キャピラリーツール１におけ
る軸線１ａに沿って、図３に示すように、傾斜状に上昇
動し、続いて、第２の接合部であるところの前記リード
端子４の方向に水平移動したのち、図４に示すように、
リード端子４に向かって真っ直ぐ下向きに下降動して、
前記金線５を、リード端子４に押圧することにより、当
該金線５を、リード端子４に対して接合する。In this case, the capillary tool 1 is moved to the ball portion 5 while performing the pressing.
By making a reciprocal turn around the vertical line 6 passing through the center of a by an appropriate angle, the bondability when the ball portion 5a is bonded to the semiconductor chip 3 can be improved. .. Next, the capillary tool 1 is moved upward along the axis 1a of the capillary tool 1 in an inclined manner as shown in FIG. 3, and subsequently, the lead terminal 4 at the second joint portion is moved. After moving horizontally in the direction, as shown in Fig. 4,
Move down straight toward the lead terminal 4,
By pressing the gold wire 5 against the lead terminal 4, the gold wire 5 is joined to the lead terminal 4.

【００１４】そして、前記キャピラリーツール１を、当
該キャピラリーツール１における軸線１ａに沿って、図
５に示すように、一旦、適宜高さだけ傾斜状に上昇動
し、この時点で、このキャピラリーツール１内に押圧し
た金線を、当該キャピラリーツール１に設けられている
クランプ機構（図示せず）にてクランプし、この状態
で、キャピラリーツール１を、その軸線１ａに更に上昇
動することにより、図６に示すように、金線５を切断し
たのち、キャピラリーツール１を元の位置まで復帰する
のである。Then, as shown in FIG. 5, the capillary tool 1 is temporarily moved in an inclined manner up to an appropriate height along the axis 1a of the capillary tool 1, and at this point, the capillary tool 1 is moved. The gold wire pressed inward is clamped by a clamp mechanism (not shown) provided in the capillary tool 1, and in this state, the capillary tool 1 is further moved up to its axis 1a, As shown in FIG. 6, after cutting the gold wire 5, the capillary tool 1 is returned to its original position.

【００１５】このように、本発明は、キャピラリーツー
ル１を、その軸線１ａが第１の接合部であるところの半
導体チップ３から第２の接合部であるところのリード端
子４に向かって斜め上向きに適宜角度θだけ傾斜するよ
うに傾斜状に構成し、このキャピラリーツール１の下降
動によって、金線５におけるボール部５ａを半導体チッ
プ３に接合したのち、前記キャピラリーツール１を、当
該キャピラリーツール１における傾斜状の軸線１ａに沿
って上昇動するようにすると、前記金線５のうちボール
部５ａに繋がっていて硬く曲がり難くなる組織に変化す
る長さ（Ｓ）の部分は、前記従来のように、半導体チッ
プ３における面に対して垂直になることなく、半導体チ
ップ３からリード端子４に向かって適宜角度θだけ傾斜
することになる。As described above, according to the present invention, the capillary tool 1 is directed obliquely upward from the semiconductor chip 3 where the axis 1a is the first joint portion to the lead terminal 4 where the second joint portion is the second joint portion. And the ball portion 5a of the gold wire 5 is bonded to the semiconductor chip 3 by the downward movement of the capillary tool 1, and then the capillary tool 1 is attached to the capillary tool 1. When it is moved upward along the slanted axis 1a in, the portion of the gold wire 5 having a length (S) that is connected to the ball portion 5a and changes into a structure that is hard and difficult to bend is the same as the conventional one. In addition, the semiconductor chip 3 is not perpendicular to the surface of the semiconductor chip 3 but is inclined from the semiconductor chip 3 toward the lead terminal 4 by an appropriate angle θ.

【００１６】これに加えて、金線５のうち前記曲がり難
くなる組織に変化する長さ（Ｓ）の部分よりも先で下向
きに湾曲する部分は、前記曲がり難くなる組織に変化す
る部分が前記のようにリード端子４の方向に傾斜してい
ることにより、更に下向き方向に湾曲し易くなるから、
半導体チップ３の上面から金線５のうち最も高い部分ま
での高さ寸法（Ｈ）は、前記従来の場合よりも大幅に低
くなるのである。In addition to this, in the portion of the gold wire 5 which is bent downward before the portion of the length (S) that changes to the tissue that is hard to bend, the portion that changes to the tissue that is hard to bend is the aforesaid. By tilting in the direction of the lead terminal 4 as described above, it becomes easier to bend in the downward direction.
The height dimension (H) from the upper surface of the semiconductor chip 3 to the highest portion of the gold wire 5 is significantly lower than that in the conventional case.

【００１７】なお、本発明は、前記実施例のように、リ
ードフレームにダイボンディングした半導体チップと、
そのリード端子との間のワイヤーボンディングに限ら
ず、プリント基板に搭載した半導体チップとプリント基
板における各種配線回路との間をワイヤーボンディング
するとか、或いは、プリント基板における各種配線回路
の相互間をワイヤーボンディングするような場合等、そ
の他のワイヤーボンディングに適用できることは言うま
でもない。According to the present invention, a semiconductor chip die-bonded to a lead frame as in the above embodiment,
Not only wire bonding between the lead terminals but also wire bonding between the semiconductor chip mounted on the printed circuit board and various wiring circuits on the printed circuit board, or wire bonding between various wiring circuits on the printed circuit board. Needless to say, the present invention can be applied to other wire bonding in the case of doing so.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明の実施例を示す図で、金線の先端にボー
ル部を形成したときの図である。FIG. 1 is a view showing an embodiment of the present invention in which a ball portion is formed at the tip of a gold wire.

【図２】図１の状態からキャピラリーツールを半導体チ
ップに向かって下降動したときの図である。FIG. 2 is a diagram when the capillary tool is moved down from the state of FIG. 1 toward a semiconductor chip.

【図３】図２の状態からキャピラリーツールを斜めに上
昇動したときの図である。FIG. 3 is a diagram when the capillary tool is moved up obliquely from the state of FIG.

【図４】図３の状態からキャピラリーツールをリード端
子に向かって下降動したときの図である。FIG. 4 is a diagram when the capillary tool is moved downward from the state of FIG. 3 toward a lead terminal.

【図５】図４の状態からキャピラリーツールを斜めに上
昇動したときの図である。FIG. 5 is a diagram when the capillary tool is moved up obliquely from the state of FIG.

【図６】図５の状態から金線を切断したときの図であ
る。6 is a diagram when the gold wire is cut from the state of FIG.

【図７】従来のワイヤーボンディング方法を示す図で、
金線の先端にボール部を形成したときの図である。FIG. 7 is a diagram showing a conventional wire bonding method,
It is a figure when a ball part is formed in the tip of a gold wire.

【図８】図７の状態からキャピラリーツールを半導体チ
ップに向かって下降動したときの図である。FIG. 8 is a diagram when the capillary tool is moved down from the state of FIG. 7 toward the semiconductor chip.

【図９】図８の状態からキャピラリーツールを斜めに上
昇動したときの図である。FIG. 9 is a diagram when the capillary tool is moved up obliquely from the state of FIG.

【符号の説明】[Explanation of symbols]

１ キャピラリーツール １ａ キャピラリーツールの軸線 ２ アイランド部 ３ 半導体チップ ４ リード端子 ５ 金線 ５ａ ボール部 1 Capillary Tool 1a Capillary Tool Axis 2 Island Part 3 Semiconductor Chip 4 Lead Terminal 5 Gold Wire 5a Ball Part

Claims (1)

【特許請求の範囲】[Claims] 【請求項１】キャピラリーツールを、その軸線が第１の
接合部から第２の接合部に向かって斜め上向きに適宜角
度だけ傾斜するように傾斜状に構成し、このキャピラリ
ーツールに挿通した金線等の金属線の下端にボール部を
形成すると、前記キャピラリーツールを略真っ直ぐ下向
きに下降動して、前記金属線におけるボール部を前記第
１の接合部に接合し、次いで、前記キャピラリーツール
を、その傾斜状の軸線に沿って上昇動したのち、第２の
接合部に向かって下降動することを特徴とするボール式
ワイヤーボンディング方法。1. A gold wire inserted into the capillary tool, wherein the axis of the capillary tool is inclined so that the axis of the capillary tool is inclined upward from the first joint portion to the second joint portion by an appropriate angle. When the ball portion is formed at the lower end of the metal wire such as, the capillary tool is moved downward in a substantially straight direction to join the ball portion of the metal wire to the first joint portion, and then the capillary tool is A ball-type wire bonding method, which comprises moving upward along the inclined axis and then moving downward toward the second joint.
JP3249520A 1991-09-27 1991-09-27 Ball type wire bonding method Pending JPH0590320A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3249520A JPH0590320A (en) 1991-09-27 1991-09-27 Ball type wire bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3249520A JPH0590320A (en) 1991-09-27 1991-09-27 Ball type wire bonding method

Publications (1)

Publication Number Publication Date
JPH0590320A true JPH0590320A (en) 1993-04-09

Family

ID=17194200

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3249520A Pending JPH0590320A (en) 1991-09-27 1991-09-27 Ball type wire bonding method

Country Status (1)

Country Link
JP (1) JPH0590320A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002190493A (en) * 2000-12-20 2002-07-05 Nec Corp Wire-bonding method for semiconductor device and wire- bonding apparatus
US6998295B2 (en) 2002-11-26 2006-02-14 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a device package

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002190493A (en) * 2000-12-20 2002-07-05 Nec Corp Wire-bonding method for semiconductor device and wire- bonding apparatus
JP4601159B2 (en) * 2000-12-20 2010-12-22 ルネサスエレクトロニクス株式会社 Wire bonding method and wire bonding apparatus for semiconductor device
US6998295B2 (en) 2002-11-26 2006-02-14 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a device package

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