US5207786A - Wire bonding method - Google Patents
Wire bonding method Download PDFInfo
- Publication number
- US5207786A US5207786A US07/822,678 US82267892A US5207786A US 5207786 A US5207786 A US 5207786A US 82267892 A US82267892 A US 82267892A US 5207786 A US5207786 A US 5207786A
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- United States
- Prior art keywords
- capillary tip
- fine metal
- metal wire
- clamp
- clamper
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
- B23K20/004—Wire welding
- B23K20/005—Capillary welding
- B23K20/007—Ball bonding
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/851—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector the connector being supplied to the parts to be connected in the bonding apparatus
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H01L2924/01033—Arsenic [As]
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- H01L2924/01075—Rhenium [Re]
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Definitions
- the present invention relates to a wire bonding apparatus and method used in a manufacturing process for semiconductor devices.
- FIG. 17 shows a conventional wire bonding apparatus.
- a capillary tip 1 is supported by an ultrasonic horn 2.
- a first clamper 3 is disposed above the capillary tip 1, and is supported by a first clamper switch 4 which is arranged integrally with the ultrasonic horn 2.
- the ultrasonic horn 2 and the first clamper switch 4 are coupled to an up/down motion mechanism 5. That is, the capillary tip 1 and the first clamper 3 are moved up and down by the up/down motion mechanism 5 while the relative positions of the above two components are kept constant.
- a second clamper 6 is supported by a second clamper switch 7 and positioned above the first clamper 3. This second clamper 6 does not move up and down as it is secured at a fixed position.
- the first and second clampers 3 and 6 clamp a fine metal wire 8 which passes through the capillary tip 1.
- the capillary tip 1 is used to join a ball 11 formed at the tip of the fine metal wire 8 to a bonding pad of an IC chip 10 on a die pad 9 (FIG. 18).
- the capillary tip 1 is moved upward (FIG. 19) and over an inner lead 12 while letting out the fine metal wire 8 (FIG. 20). It is then moved downward to join the fine metal wire 8 to the inner lead 12 (FIG. 21).
- the first clamper 3 continues to clamp the fine metal wire 8, it is moved upward together with the capillary tip 1, whereby the fine metal wire 8 is cut (FIG. 22).
- the tip of the fine metal wire 8 sticking out of the capillary tip 1 is formed into another ball 11 (FIG. 23). This completes one cycle of a bonding process.
- the first clamper switch 4 closes the first clamper 3 which in turn clamps the fine metal wire 8 (FIG. 24).
- the up/down motion mechanism 5 moves the first clamper 3 as well as the capillary tip 1 downward (FIG. 25).
- the first clamper 3 is opened (FIG. 26). While the first clamper 3 is opened, the capillary tip 1 and the first clamper 3 are moved a little further downward (FIG. 27).
- the second clamper switch 7 closes the second clamper 6 which in turn clamps the fine metal wire 8 (FIG. 28).
- the capillary tip 1 and the first clamper 3 are then moved downward to join the fine metal wire 8 to the inner lead 12 (FIG. 29).
- the first clamper 3 clamps the fine metal wire 8 above the inner lead 12. While it continues to clamp the fine metal wire 8, the first clamper 3 and the capillary tip 1 are moved downward. Therefore, as shown in FIG. 28, by the time the capillary tip 1 almost comes in contact with the inner lead 12, the excess fine metal wire 8 has been drawn under the capillary tip 1.
- the bottom dead center A of the fine metal wire 8 under the capillary tip 1 is positioned away from the center axis 0 of the capillary tip 1. Therefore, as shown in FIGS. 32 and 33, as the capillary tip 1 is moved downward, the fine metal wire 8 does not come in contact with the inner lead 12 at the bottom dead center A, but instead it comes in contact with the inner lead 12 at a point B which is closer to the capillary tip 1 than the bottom dead center A is. As depicted in FIGS. 34 and 35, when the capillary tip 1 is completely in contact with the inner lead 12, the fine metal wire 8 slips off the inner lead 12 at the point B. As a result, the fine metal wire 8 bends and hangs appreciably. When such a problem occurs, the fine metal wire 8 comes in contact with adjacent wires or inner leads, which may cause a short circuit.
- the object of the invention is to provide a wire bonding apparatus and method which can prevent a fine metal wire from bending and hanging.
- a wire bonding apparatus comprising: a capillary tip through which a fine metal wire passes; a first clamper disposed above the capillary tip for clamping the fine metal wire; a second clamper disposed above the first clamper for clamping the fine metal wire; first moving means for moving the capillary tip up and down; and second moving means for moving the first clamper up and down with respect to the capillary tip in order that an excessive length of fine metal wire which has been drawn through the capillary tip may be drawn back into the capillary tip.
- a wiring bonding method by using a capillary tip comprising the steps of: forming a ball at the tip of a fine metal wire which passes through the capillary tip; joining by the capillary tip the ball to a first portion to be bonded; moving the capillary tip from the first portion to be bonded to the vicinity of a second portion to be bonded while the fine metal wire is being drawn; drawing an excessive length of the fine metal wire protruding from of the capillary tip back into the capillary tip; and joining the fine metal wire at the end of the capillary tip to the second portion to be bonded by pressing the capillary tip against the second portion to be bonded.
- FIG. 1 is a view showing a wire bonding apparatus in accordance with an embodiment of the present invention
- FIGS. 2 through 10 are views each showing, in a bonding process, a clamping operation performed by the bonding apparatus of FIG. 1;
- FIGS. 11 through 16 are views each showing states of a fine metal wire when the bonding apparatus of FIG. 1 is in operation;
- FIG. 17 is a view illustrating the conventional bonding apparatus
- FIGS. 18 through 23 are views each showing a bonding operation by using the bonding apparatus of FIG. 17;
- FIGS. 24 through 29 are views each showing, in a bonding process, a clamping operation of the bonding apparatus of FIG. 17;
- FIGS. 30 through 35 are views each showing states of a fine metal wire when the bonding apparatus of FIG. 17 is in operation.
- FIG. 1 shows a wire bonding apparatus in accordance with the embodiment of the invention.
- a capillary tip 21 is supported by an ultrasonic horn 22 which is coupled to a first moving means or mechanism 25 for moving the horn up and down (hereinafter referred to as a horn up/down motion mechanism 25).
- a first clamper 23 supported by a first clamper switch 24 is disposed above the capillary tip 21.
- the first clamper switch 24 is coupled to a second moving means or mechanism 35 for moving the first clamper 23 up and down (hereinafter called a first clamper up/down motion mechanism 35).
- the horn up/down motion mechanism 25 and the first clamper up/down motion mechanism 35 are provided separately.
- a second clamper 26 is disposed above the first clamper 23.
- the second clamper 26 is supported by a second clamper switch 27 which is secured to an unillustrated prop or the like. In other words, the second clamper 26 does not move up and down, but it is instead secured at a fixed position.
- the first and second clampers 23 and 26 clamp and release a fine metal wire 28 which passes through the capillary tip 21.
- the fine metal wire is thereafter joined to the inner lead 32.
- the operation of the first and second clampers 23 and 26 at this stage will be explained with reference to FIGS. 2 through 10.
- the first clamper switch 24 closes the first clamper 23 which in turn clamps the fine metal wire 28 (FIG. 2).
- the horn up/down motion mechanism 25 and the first clamper up/down motion mechanism 35 move the capillary tip 21 and the first clamper 23 downward at the same time (FIG. 3).
- the first clamper 23 is opened (FIG. 4). Under these conditions, the capillary tip 21 and the first clamper 23 are moved further downward until the distal end of the capillary tip 21 comes very close to the inner lead 32 (FIG. 5).
- the first clamper switch 24 then closes the first clamper 23 which in turn clamps the fine metal wire 28 (FIG. 6).
- the first clamper up/down motion mechanism 35 moves only the first clamper 23 upward (FIG. 7). In other words, the first clamper 23 is moved upward relative to the capillary tip 21, whereby the excess fine metal wire 28 which has been drawn through and out of the capillary tip 21 is drawn back into the capillary tip 21.
- the bottom dead center A of the fine metal wire 28, which has been drawn under the capillary tip 21 comes close to the center axis 0 of the capillary tip 21.
- the second clamper switch 27 closes the second clamper 26 which in turn clamps the fine metal wire 28 (FIG. 8).
- the first clamper switch 24 thereafter opens the first clamper 23 (FIG. 9).
- the horn up/down motion mechanism 25 moves the capillary tip 21 downward, whereby the fine metal wire 28 is joined to the inner lead 32 (FIG. 10).
- the excess length of fine metal wire 28 has already drawn back into the capillary tip 21, as shown in FIGS. 13 and 14, even when the capillary tip 21 is moving downward, the bottom dead center A of the fine metal wire 28 will not deviate from the inner lead 32.
- FIGS. 15 and 16 even when the capillary tip 21 is completely in contact with the inner lead 32, the fine metal wire 28 will not slip off the inner lead 32, nor will it bend or hang appreciably.
- the second clamper 26 is opened after the fine metal wire 28 has been joined to the inner lead 32 as described above. Then, while the first clamper 23 continues to clamp the fine metal wire 28, the first clamper 23 and the capillary tip 21 are simultaneously moved upward to cut the fine metal wire 28. For the next cycle of the bonding process, the tip of the fine metal wire 28 sticking out of the capillary tip 21 is formed into another ball. This completes one cycle of the bonding process.
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
Claims (2)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3031431A JPH04247631A (en) | 1991-02-01 | 1991-02-01 | Wire bonder |
JP3-31431 | 1991-02-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
US5207786A true US5207786A (en) | 1993-05-04 |
Family
ID=12331050
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US07/822,678 Expired - Lifetime US5207786A (en) | 1991-02-01 | 1992-01-21 | Wire bonding method |
Country Status (2)
Country | Link |
---|---|
US (1) | US5207786A (en) |
JP (1) | JPH04247631A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998053485A1 (en) * | 1997-05-23 | 1998-11-26 | Matsushita Electric Industrial Co., Ltd. | Bump forming method and bump bonder |
EP0945208A2 (en) * | 1998-03-23 | 1999-09-29 | F & K Delvotec Bondtechnik GmbH | Apparatus and method for ball bonding |
US6173879B1 (en) * | 1999-02-16 | 2001-01-16 | Oki Electric Industry Co., Ltd. | Wire bonder |
US20090259216A1 (en) * | 2008-04-10 | 2009-10-15 | Medtronic, Inc. | Automated integrity tests |
US20110105680A1 (en) * | 2008-07-09 | 2011-05-05 | Andreas Taden | Polymerizable Composition |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4597522A (en) * | 1983-12-26 | 1986-07-01 | Kabushiki Kaisha Toshiba | Wire bonding method and device |
US4789095A (en) * | 1987-02-09 | 1988-12-06 | Kabushiki Kaisha Toshiba | Method of controlling a wire bonding apparatus |
US5037023A (en) * | 1988-11-28 | 1991-08-06 | Hitachi, Ltd. | Method and apparatus for wire bonding |
-
1991
- 1991-02-01 JP JP3031431A patent/JPH04247631A/en active Pending
-
1992
- 1992-01-21 US US07/822,678 patent/US5207786A/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4597522A (en) * | 1983-12-26 | 1986-07-01 | Kabushiki Kaisha Toshiba | Wire bonding method and device |
US4789095A (en) * | 1987-02-09 | 1988-12-06 | Kabushiki Kaisha Toshiba | Method of controlling a wire bonding apparatus |
US5037023A (en) * | 1988-11-28 | 1991-08-06 | Hitachi, Ltd. | Method and apparatus for wire bonding |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998053485A1 (en) * | 1997-05-23 | 1998-11-26 | Matsushita Electric Industrial Co., Ltd. | Bump forming method and bump bonder |
US6098868A (en) * | 1997-05-23 | 2000-08-08 | Masushita Electric Industrial Co., Ltd. | Bump forming method and bump bonder |
EP0945208A2 (en) * | 1998-03-23 | 1999-09-29 | F & K Delvotec Bondtechnik GmbH | Apparatus and method for ball bonding |
EP0945208A3 (en) * | 1998-03-23 | 2002-05-15 | F & K Delvotec Bondtechnik GmbH | Apparatus and method for ball bonding |
US6173879B1 (en) * | 1999-02-16 | 2001-01-16 | Oki Electric Industry Co., Ltd. | Wire bonder |
US6357650B1 (en) * | 1999-02-16 | 2002-03-19 | Oki Electric Industry Co., Ltd. | Method of wire-bonding between pad on semiconductor chip and pad on circuit board on which the semiconductor chip is mounted |
US20090259216A1 (en) * | 2008-04-10 | 2009-10-15 | Medtronic, Inc. | Automated integrity tests |
US20110105680A1 (en) * | 2008-07-09 | 2011-05-05 | Andreas Taden | Polymerizable Composition |
Also Published As
Publication number | Publication date |
---|---|
JPH04247631A (en) | 1992-09-03 |
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