JPH08153756A - Method and apparatus for wire bonding of semiconductor devices - Google Patents
Method and apparatus for wire bonding of semiconductor devicesInfo
- Publication number
- JPH08153756A JPH08153756A JP6296162A JP29616294A JPH08153756A JP H08153756 A JPH08153756 A JP H08153756A JP 6296162 A JP6296162 A JP 6296162A JP 29616294 A JP29616294 A JP 29616294A JP H08153756 A JPH08153756 A JP H08153756A
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- wire
- tool
- bonding tool
- inner lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
- H01L2224/78302—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体装置の製造にお
けるワイヤボンドに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to wire bonding in the manufacture of semiconductor devices.
【０００２】[0002]
【従来の技術】従来の半導体装置のワイヤボンディング
は、図１１に示すように行われていた。すなわち、図１
１（ａ）に示すように、ボンディングツール３より下方
に突出している金属細線１（ワイヤ）の先端部と、電気
トーチ２間に放電を行わせ、図１１（ｂ）に示すよう
に、その金属細線１の先端部に金属球４を形成する。2. Description of the Related Art Conventional wire bonding of a semiconductor device has been performed as shown in FIG. That is, FIG.
As shown in FIG. 1 (a), electric discharge is performed between the tip of the metal thin wire 1 (wire) protruding downward from the bonding tool 3 and the electric torch 2, and as shown in FIG. A metal ball 4 is formed at the tip of the thin metal wire 1.
【０００３】次に、図１１（ｃ）に示すように、ボンデ
ィングツール３が降下し、金属球４は加熱されたＩＣチ
ップ５の電極と超音波と荷重により接合される。次に、
図１１（ｄ）に示すように、ボンディングツール３を加
熱されたインナーリード６上に移動し降下させる。この
時、金属細線１はループを形成する。次に、ループ形成
後、図１１（ｅ）に示すように、ボンディングツール３
を上昇させ、ある高さでクランプ７を閉じ、更に上昇を
続けることにより接合部に力が加わり、金属細線１が切
れるようになっている。Next, as shown in FIG. 11 (c), the bonding tool 3 descends, and the metal balls 4 are joined to the electrodes of the heated IC chip 5 by ultrasonic waves and a load. next,
As shown in FIG. 11D, the bonding tool 3 is moved onto the heated inner lead 6 and lowered. At this time, the thin metal wire 1 forms a loop. Next, after forming the loop, as shown in FIG.
Is raised, the clamp 7 is closed at a certain height, and by continuing the rise, a force is applied to the joint portion, and the thin metal wire 1 is cut.
【０００４】次に、従来のボンディングツールの形状を
図１２に示す。図１２に示すように、形状には大別して
２種類あり、図１２（ａ）に示すように、ボンディング
パッドピッチｐ1 が１５０μｍ程度以上の場合はＡタイ
プを用い、それ以下のピッチに対しては、図１２（ｂ）
に示すように、先端部がくびれたＢのボトルネックタイ
プを用いている。Next, a shape of a conventional bonding tool is shown in FIG. As shown in FIG. 12, there are roughly two types of shapes. As shown in FIG. 12A, when the bonding pad pitch p 1 is about 150 μm or more, the A type is used, and for pitches less than that. Is shown in FIG.
As shown in, a bottleneck type of B with a narrowed tip is used.
【０００５】これは、図に示すようなワイヤ１とボンデ
ィングツール２の接触により生じるワイヤ変形を避ける
ためである（ワイヤ変形が生じると、隣接ワイヤ間でシ
ョートを起こし、半導体装置として電気的に特性が得ら
れず、不良となってしまう）。また、ボンディングツー
ル３，３′の先端形状については、ＡタイプとＢタイプ
のどちらのタイプでも、図１２に示すような先端形状に
なり、金属球を保持するためのインナーチャンファー部
８が設けられている。なお、９は圧着金属球である。This is to avoid the wire deformation caused by the contact between the wire 1 and the bonding tool 2 as shown in the figure (when the wire deformation occurs, a short circuit occurs between the adjacent wires, and the electrical characteristics of the semiconductor device are improved. Will not be obtained and will be defective). Regarding the tip shape of the bonding tools 3 and 3 ', both of the A type and the B type have the tip shape as shown in FIG. 12, and the inner chamfer part 8 for holding the metal ball is provided. Has been. In addition, 9 is a pressure bonding metal ball.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、従来の
ワイヤボンディング方法では、以下の理由によりボンデ
ィングパッドピッチの縮小化に限界があった。 （１）前述のように、従来の方法では１ｓｔボンディン
グの際に金属球を圧着している。従って、ファインピッ
チ化は、その圧着された金属球の直径より小さくはでき
ない〔図５（ａ）参照〕。However, the conventional wire bonding method has a limitation in reducing the bonding pad pitch due to the following reasons. (1) As described above, according to the conventional method, the metal balls are pressure-bonded during the first bonding. Therefore, the fine pitch cannot be made smaller than the diameter of the pressure-bonded metal sphere [see FIG. 5 (a)].
【０００７】（２）前述のように、ボンディングツール
とワイヤループの接触を避けるために、ボンディングツ
ールはボトルネックタイプが使用されている。しかしな
がら、図１２に示したように、金属球を保持するための
インナーチャンファー部８を有した状態では、ボンディ
ングツール先端幅（Ｗ）の縮小化には限界がある。従っ
て、ワイヤループとボンディングツールの接触という問
題からも、ＩＣチップ電極のファインピッチ化には眼界
がある。(2) As described above, the bottleneck type bonding tool is used to avoid contact between the bonding tool and the wire loop. However, as shown in FIG. 12, in the state where the inner chamfer portion 8 for holding the metal sphere is provided, there is a limit to the reduction of the bonding tool tip width (W). Therefore, due to the problem of contact between the wire loop and the bonding tool, there is a field of view for making the fine pitch of the IC chip electrodes.
【０００８】このように、ＩＣチップ電極の縮小化には
限界があり、従って、ＩＣチップの最近の動向である多
ピン化に対応できなくなるという問題がある。本発明
は、上記問題点を除去し、ＩＣチップ電極のボンディン
グ部を縮小し、ボンディングパッドピッチの縮小化を図
り得る半導体装置のワイヤボンディング方法及びそのた
めの装置を提供することを目的とする。As described above, there is a limit to the reduction of the size of the IC chip electrode, and therefore, there is a problem that it is not possible to cope with the recent trend of increasing the number of pins of the IC chip. It is an object of the present invention to provide a wire bonding method for a semiconductor device and a device therefor capable of eliminating the above-mentioned problems, reducing a bonding portion of an IC chip electrode, and reducing a bonding pad pitch.
【０００９】[0009]
【課題を解決するための手段】本発明は、上記目的を達
成するために、 （１）ＩＣチップ電極とインナーリード間を接続する半
導体装置のワイヤボンディング方法において、ワイヤを
前記インナーリードを直接圧着する２ｎｄボンディング
後に、そのインナーリード上でボンディングツールを微
小長さだけ上昇させ、クランプを閉じワイヤを固定する
工程と、前記ボンディングツールを前記ＩＣチップ電極
から前記インナーリードの延長方向へ移動し、該延長方
向とは逆の方向へ曲げられ、前記微小長さだけ突出部を
有するワイヤを切断する工程と、前記突出部を有するワ
イヤを前記ＩＣチップ電極上に直接圧着する１ｓｔボン
ディングを行う工程とからなり、前記１ｓｔボンディン
グ後は、前記２ｎｄボンディングを行うようにしたもの
である。In order to achieve the above object, the present invention provides: (1) In a wire bonding method for a semiconductor device for connecting an IC chip electrode and an inner lead, a wire is directly crimped to the inner lead. After the 2nd bonding, the step of raising the bonding tool on the inner lead by a minute length, closing the clamp to fix the wire, and moving the bonding tool from the IC chip electrode in the extension direction of the inner lead, From the step of cutting a wire having a protrusion by the minute length, which is bent in the direction opposite to the extension direction, and the step of performing 1st bonding to directly crimp the wire having the protrusion on the IC chip electrode. After the first bonding, the second bonding is performed. is there.
【００１０】（２）ＩＣチップ電極とインナーリード間
を接続する半導体装置のワイヤボンディング装置におい
て、超音波と荷重を印加できるトランスデューサーホー
ンと、このトランスデューサーホーンへの取付部が略円
柱形であり、かつその下部が略円錐形であり、中央部に
ワイヤを通すためのストレートな貫通穴を具備するボン
ディングツールとを設けるようにしたものである。(2) In a wire bonding device for a semiconductor device for connecting an IC chip electrode and an inner lead, a transducer horn capable of applying an ultrasonic wave and a load, and a mounting portion to the transducer horn are substantially cylindrical. A bonding tool having a substantially conical lower part and a straight through hole for passing a wire in the central part is provided.
【００１１】[0011]
〔１〕上記（１）記載の半導体装置のワイヤボンディン
グ方法によれば、１ｓｔボンディングで金属球を圧着し
ないことから、ＩＣチップ電極の配位方向における幅
を、圧着金属球径程度から、ワイヤ圧着幅程度に抑える
ことができ、ファインピッチ化を図ることができる。[1] According to the wire bonding method for a semiconductor device described in (1) above, since the metal sphere is not crimped by the 1st bonding, the width of the IC chip electrode in the orientation direction can be adjusted from the crimped metal sphere diameter to the wire crimp. The width can be suppressed to about the width, and a fine pitch can be achieved.
【００１２】また、１ｓｔボンド立ち上がり部の角度
は、従来の金属球のある場合が垂直であるのに対し、鋭
角にすることができる。更に、金属球の厚さもなくすこ
とができるので、立ち上がり部のワイヤ高さを低く抑え
ることができる。したがって、ボンディングツールとワ
イヤ立ち上がり部との接触が避けられ、ファインピッチ
化を図ることができる。Further, the angle of the rising portion of the 1st bond can be set to an acute angle as compared with the case where the conventional metal sphere is vertical. Further, since the thickness of the metal ball can be eliminated, the height of the wire at the rising portion can be suppressed to be low. Therefore, contact between the bonding tool and the wire rising portion can be avoided, and a fine pitch can be achieved.
【００１３】〔２〕上記（２）記載の半導体装置のワイ
ヤボンディング装置によれば、従来のように、インナー
チャンファー部を不要としたので、ボンディングツール
の先端幅を小さく抑えることができ、前述のように隣接
ワイヤとの接触が避けられるため、ボンディングパッド
ピッチの縮小化を図ることができる。[2] According to the wire bonding apparatus for a semiconductor device described in (2) above, since the inner chamfer portion is not required as in the conventional case, the tip width of the bonding tool can be suppressed to be small. Since the contact with the adjacent wire is avoided as described above, the pitch of the bonding pad can be reduced.
【００１４】[0014]
【実施例】以下、本発明の実施例について図面を参照し
ながら説明する。図１は本発明の第１実施例を示すワイ
ヤボンディング工程図である。 （１）まず、図１（ａ）に示すように、インナーリード
１２上にボンディングツール１３を降下させ、ワイヤ１
１の２ｎｄボンディングを行う。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a wire bonding process diagram showing a first embodiment of the present invention. (1) First, as shown in FIG. 1A, the bonding tool 13 is lowered onto the inner lead 12 to remove the wire 1
2nd bonding of No. 1 is performed.
【００１５】（２）次に、図１（ｂ）に示すように、ボ
ンディングツール１３を微小長さ、例えば、５０μｍ程
度上昇させ、クランプ１４を閉じる。なお、微小長さは
５０μｍに限定されるものではなく、微細化のニーズを
満たすように、ボンディングが可能な長さに応じて適宜
変更できることは言うまでもない。 （３）次に、図１（ｃ）に示すように、配線（１ｓｔボ
ンド→２ｎｄボンド）方向の延長方向へ水平にボンディ
ングツール１３を移動させる。(2) Next, as shown in FIG. 1B, the bonding tool 13 is raised by a very small length, for example, about 50 μm, and the clamp 14 is closed. The minute length is not limited to 50 μm, and it goes without saying that the minute length can be appropriately changed depending on the bondable length so as to meet the needs for miniaturization. (3) Next, as shown in FIG. 1C, the bonding tool 13 is horizontally moved in the extension direction of the wiring (1st bond → 2nd bond) direction.
【００１６】（４）次に、図１（ｄ）に示すように、配
線（１ｓｔボンド→２ｎｄボンド）方向の延長方向へ移
動を続けると、接合部に力が加わりワイヤ１１が切れ
る。このようにボンディングツール１３を移動するよう
にしたので、ワイヤ１１はボンディングツール１３から
ＩＣチップ電極の方向へ曲げられた突出部１１ａ（本実
施例では５０μｍ）を有する。この突出部１１ａの曲が
りには、次の１ｓｔボンディングの際に、ボンディング
ツール１３からワイヤ１１が抜けてしまうのを防止する
効果がある。(4) Next, as shown in FIG. 1D, when the wire is continued to move in the extension direction of the wiring (1st bond → 2nd bond) direction, a force is applied to the bonding portion and the wire 11 is broken. Since the bonding tool 13 is moved in this way, the wire 11 has the protrusion 11a (50 μm in this embodiment) bent from the bonding tool 13 toward the IC chip electrode. The bending of the protruding portion 11a has an effect of preventing the wire 11 from coming off from the bonding tool 13 in the next 1st bonding.
【００１７】（５）次に、図１（ｅ）に示すように、ボ
ンディングツール１３をＩＣチップ１５に形成されるＩ
Ｃチップ電極１６上へ移動／降下させ、超音波と荷重に
より接合させる。 （６）次に、図１（ｆ）に示すように、ボンディングツ
ール１３を加熱されたインナーリード１２上に移動す
る。(5) Next, as shown in FIG. 1E, the bonding tool 13 is formed on the IC chip 15.
It is moved / lowered onto the C-tip electrode 16 and bonded by ultrasonic waves and a load. (6) Next, as shown in FIG. 1F, the bonding tool 13 is moved onto the heated inner lead 12.
【００１８】（７）次に、図１（ｇ）に示すように、ボ
ンディングツール１３を降下させる。この時、ワイヤ１
１はループを形成する。なお、ワイヤーボンド作業開始
時の１ｓｔボンディングは以下のように行う。 （１）ボンディングツール１３より、予めワイヤを所定
の長さ（本実施例では５０μｍ）引き出しておく。(7) Next, as shown in FIG. 1 (g), the bonding tool 13 is lowered. At this time, wire 1
1 forms a loop. The first bonding at the start of the wire bonding work is performed as follows. (1) The wire is pulled out from the bonding tool 13 in advance by a predetermined length (50 μm in this embodiment).
【００１９】（２）ＩＣチップ電極１６又はインナーリ
ード１２等の配線上必要な場所以外で、なおかつボンデ
ィング可能な場所でボンディングツール１３を降下させ
る。 （３）その後、上記（２）〜（５）の工程と同様にボン
ディングツール１３を動かし、最初の電極へ移動させ、
１ｓｔボンディングを行う。この実施例による方法でボ
ンディングを行えば、図２（上面図）及び図３（側面
図）に示すようになる。すなわち、これらの図に示すよ
うに、配線方向にワイヤ幅でボンディングされた１ｓｔ
及び２ｎｄボンディングを有するのみであり、特に、Ｉ
Ｃチップ電極１６において、圧着される金属球が形成さ
れない分、ピッチを狭めることができる。(2) The bonding tool 13 is lowered at a place where bonding is possible other than a place necessary for wiring such as the IC chip electrode 16 or the inner lead 12. (3) After that, the bonding tool 13 is moved in the same manner as in the steps (2) to (5) to move to the first electrode,
1st bonding is performed. Bonding by the method according to this embodiment is as shown in FIG. 2 (top view) and FIG. 3 (side view). That is, as shown in these figures, 1st bonding with a wire width in the wiring direction
And 2nd bonding only,
In the C chip electrode 16, the pitch can be narrowed because the metal balls to be pressed are not formed.
【００２０】更に、この第１の実施例におけるボンディ
ングツール及びトランスデューサー等の位置関係を補足
すると、図４に示すように、振動子（トランスデューサ
ー）３２を有する超音波と荷重を印加できるトランスデ
ューサーホーン３１に保持されたボンディングツール１
３と、ダイパッド１８上に搭載されるＩＣチップ１５及
びインナーリード１２を加熱できるヒートブロック２１
より構成される。Further, supplementing the positional relationship of the bonding tool, the transducer and the like in this first embodiment, as shown in FIG. 4, an ultrasonic transducer having a transducer 32 and a transducer capable of applying a load. Bonding tool 1 held by horn 31
3 and a heat block 21 capable of heating the IC chip 15 and the inner leads 12 mounted on the die pad 18.
It is composed of
【００２１】ここでは、従来のワイヤボンディング方法
にて用いられていた金属球形成用の電気トーチは設ける
必要はない。また、従来のワイヤボンディングとボンデ
ィングツールの軌跡及びクランプの動作タイミングが異
なるため、本発明のワイヤボンディングの動作のための
アプリケーションソフトを備える。Here, it is not necessary to provide an electric torch for forming metal balls, which is used in the conventional wire bonding method. Further, since the locus of the bonding tool and the operation timing of the clamp are different from those of the conventional wire bonding, application software for the wire bonding operation of the present invention is provided.
【００２２】図５及び図６は第１実施例の効果の説明図
である。図５（ｂ）に示すように、この実施例では１ｓ
ｔボンディングで金属球の圧着部９が形成されないこと
から、ＩＣチップ電極１６の配位方向１７における幅
を、図５（ａ）に示す従来の圧着金属球径程度（Ｐ1 ）
から、図５（ｂ）に示すように、ワイヤ圧着幅程度（Ｐ
2 ）に抑えることができ、ファインピッチ化を図ること
ができる。FIG. 5 and FIG. 6 are explanatory views of the effect of the first embodiment. In this embodiment, as shown in FIG.
Since the pressure bonding portion 9 of the metal ball is not formed by t-bonding, the width of the IC chip electrode 16 in the orientation direction 17 is about the conventional pressure bonding metal ball diameter (P 1 ) shown in FIG.
Therefore, as shown in FIG. 5B, the wire crimping width (P
It can be suppressed to 2 ) and a fine pitch can be achieved.
【００２３】また、従来の金属球の圧着部９がある場
合、従来例では、図６（ａ）に示すように、１ｓｔボン
ド立ち上がり部の角度は、垂直（θ1 ）であるのに対
し、この実施例では、図６（ｂ）に示すように、鋭角
（θ2 ）にすることができる。また、この実施例の場
合、ワイヤボンディング部１９はワイヤ１１を直接圧着
するだけで、従来のように、金属球の圧着部９の厚さも
考えなくてよいため、立ち上がり部のワイヤ高さはＨ1
からＨ2 へと低く抑えられる。このため、図７に示すよ
うに、ボンディングツール１３とワイヤ立ち上がり部４
１との接触が避けられ、ファインピッチ化を図ることが
できる。Further, in the case where the conventional metal ball pressure bonding portion 9 is provided, in the conventional example, the angle of the 1st bond rising portion is vertical (θ 1 ) as shown in FIG. In this embodiment, as shown in FIG. 6 (b), an acute angle (θ 2 ) can be used. Further, in the case of this embodiment, since the wire bonding portion 19 only directly crimps the wire 11 and does not need to consider the thickness of the crimping portion 9 of the metal ball as in the conventional case, the wire height of the rising portion is H. 1
To H 2 from low. Therefore, as shown in FIG. 7, the bonding tool 13 and the wire rising portion 4 are
The contact with 1 can be avoided, and a fine pitch can be achieved.
【００２４】次に、本発明の第２実施例について説明す
る。第１実施例で示した方法によってボンディングを行
う際に効果のある、ボンディングツールの先端形状を第
２実施例として図８に示す。図８（ａ）は全体図、図８
（ｂ）は図８（ａ）のＡ部拡大図である。これらの図に
示すように、ボンディングツール５１の内径ｄは、ある
テーパ角を有して細くなり、ワイヤ径に応じた（ワイヤ
径の約１．５倍）ホール径Ｈにて一定の径を有する。Next, a second embodiment of the present invention will be described. A tip shape of the bonding tool, which is effective when performing the bonding by the method shown in the first embodiment, is shown in FIG. 8 as a second embodiment. 8 (a) is an overall view, FIG.
FIG. 8B is an enlarged view of part A of FIG. As shown in these drawings, the inner diameter d of the bonding tool 51 has a certain taper angle and becomes thin, and the hole diameter H corresponding to the wire diameter (about 1.5 times the wire diameter) has a constant diameter. Have.
【００２５】その後、適当な曲面Ｒを介して下面の水平
部（Ｊ部）へ移行し、再び適当な曲面ｒ、テーパを介し
て外径Ｄ（トランスデューサーのボンディングツール取
り付け部の内径）となる。従来のワイヤボンディング方
法では、貫通穴は金属球を保持するためにインナーチャ
ンファー部８を設ける必要があったが、本発明では、貫
通穴１３ａの下方には金属球を形成しないため、従来の
ように、インナーチャンファー部８は不要となる。つま
り、ストレートな貫通穴１３ａを形成するだけでよい。After that, it moves to a horizontal portion (J portion) on the lower surface through an appropriate curved surface R, and again becomes an outer diameter D (internal diameter of the bonding tool mounting portion of the transducer) through an appropriate curved surface r and taper. . In the conventional wire bonding method, it was necessary to provide the inner chamfer portion 8 for holding the metal sphere in the through hole, but in the present invention, the metal sphere is not formed below the through hole 13a. Thus, the inner chamfer part 8 is unnecessary. That is, it is only necessary to form the straight through hole 13a.
【００２６】また、先端形状を前述の図１２で示したボ
トルネックタイプに適用すればＩＣチップ電極ピッチは
さらに縮小できる。図９は本発明のワイヤの圧着の状態
を示す。図９に示すように、ワイヤ１１はボンディング
ツール５１の水平部（Ｊ部）にて圧着される。図１０は
従来と本発明の第２実施例のボンディングツールの先端
構造を示す断面図である。If the tip shape is applied to the bottleneck type shown in FIG. 12, the IC chip electrode pitch can be further reduced. FIG. 9 shows a crimped state of the wire of the present invention. As shown in FIG. 9, the wire 11 is crimped at the horizontal portion (J portion) of the bonding tool 51. FIG. 10 is a sectional view showing a tip structure of a conventional bonding tool and a bonding tool according to a second embodiment of the present invention.
【００２７】図１０（ｂ）に示すように、ボンディング
ツール５１の先端部を細く形成することができる。つま
り、従来は、図１０（ａ）に示すように、金属球を圧着
するためのインナーチャンファー部８が形成されるため
に、ボンディングツール３の先端部は太くなるが、それ
が必要でない分、貫通穴１３ａはダイレクトに形成さ
れ、幅を狭くすることができる。なお、Ｔはボンディン
グツール先端水平部幅である。As shown in FIG. 10B, the tip of the bonding tool 51 can be formed thin. That is, conventionally, as shown in FIG. 10A, since the inner chamfer portion 8 for pressing the metal ball is formed, the tip end portion of the bonding tool 3 becomes thick, but it is not necessary. The through holes 13a are directly formed, and the width can be reduced. Note that T is the width of the horizontal portion of the tip of the bonding tool.
【００２８】すなわち、従来の場合は、図１０（ｃ）に
示すように、ボンディングツール３の先端部の高さＩの
位置におけるボンディングツール３の先端部の半径をＰ
1 とすると、本発明の場合は、図１０（ｄ）に示すよう
に、同じくボンディングツール５１の先端部の高さＩの
位置におけるボンディングツール５１の先端部の半径は
Ｐ2 となり、Ｐ1 ＞Ｐ2 となることは明らかである。ま
た、この実施例を図１２に示したボトルネックタイプに
適用すれば、ＩＣチップ電極ピッチは更に縮小できる。That is, in the conventional case, as shown in FIG. 10C, the radius of the tip portion of the bonding tool 3 at the position of the height I of the tip portion of the bonding tool 3 is P.
In the case of the present invention, as shown in FIG. 10D, the radius of the tip of the bonding tool 51 at the position of the height I of the tip of the bonding tool 51 is P 2 , and P 1 > It is clear that it becomes P 2 . If this embodiment is applied to the bottleneck type shown in FIG. 12, the IC chip electrode pitch can be further reduced.
【００２９】更に、上記実施例では、ボンディングパッ
ドの縮小化に適用した例を説明したが、ワイヤループ高
さが低くなるという効果を利用すれば、ＴＳＯＰやＴＯ
ＦＰ等の低ループワイヤボンドが必要なパッケージに適
用できる。なお、本発明は上記実施例に限定されるもの
ではなく、本発明の趣旨に基づいて種々の変形が可能で
あり、これらを本発明の範囲から排除するものではな
い。Further, in the above-mentioned embodiment, an example in which the bonding pad is reduced in size has been described. However, if the effect that the wire loop height becomes low is utilized, TSOP and TO can be obtained.
It can be applied to packages that require low loop wire bonds such as FP. The present invention is not limited to the above-mentioned embodiments, and various modifications can be made based on the spirit of the present invention, and these modifications are not excluded from the scope of the present invention.
【００３０】[0030]
【発明の効果】以上、詳細に説明したように、本発明に
よれば、次のような効果を奏することができる。 （１）請求項１記載の発明によれば、１ｓｔボンディン
グで金属球を圧着しないことから、ＩＣチップ電極の配
位方向における幅を、圧着金属球径程度から、ワイヤ圧
着幅程度に抑えることができ、ファインピッチ化を図る
ことができる。As described in detail above, according to the present invention, the following effects can be obtained. (1) According to the invention of claim 1, since the metal sphere is not crimped by the first bonding, the width of the IC chip electrode in the orientation direction can be suppressed from the crimped metal sphere diameter to the wire crimping width. It is possible to achieve a fine pitch.
【００３１】また、１ｓｔボンド立ち上がり部の角度
は、従来の金属球のある場合が垂直であるのに対し、鋭
角にすることができる。また、金属球の厚さもなくすこ
とができるので、立ち上がり部のワイヤ高さを低く抑え
ることができる。したがって、ボンディングツールとワ
イヤ立ち上がり部との接触が避けられ、ファインピッチ
化を図ることができる。Further, the angle of the rising portion of the 1st bond can be set to an acute angle as compared with the case where the conventional metal sphere is vertical. Further, since the thickness of the metal sphere can be eliminated, the height of the wire at the rising portion can be kept low. Therefore, contact between the bonding tool and the wire rising portion can be avoided, and a fine pitch can be achieved.
【００３２】更に、２ｎｄボンディング後、ボンディン
グツールを横方向に移動して、ワイヤを切断するので、
ワイヤの突出部はＩＣ電極方向に曲げられ、クランプ開
の時のワイヤの抜けを防止できる。 （２）請求項２記載の発明によれば、従来のように、イ
ンナーチャンファー部を不要としたので、ボンディング
ツールの先端幅を小さく抑えることができ、前述のよう
に隣接ワイヤとの接触が避けられるため、ボンディング
パッドピッチの縮小化を図ることができる。Further, after the second bonding, the bonding tool is moved in the lateral direction to cut the wire.
The protruding portion of the wire is bent toward the IC electrode to prevent the wire from coming off when the clamp is opened. (2) According to the invention described in claim 2, since the inner chamfer portion is not required unlike the conventional case, the tip width of the bonding tool can be suppressed to be small, and the contact with the adjacent wire can be prevented as described above. Since it can be avoided, the pitch of the bonding pad can be reduced.
【図１】本発明の第１実施例を示すワイヤボンディング
工程図である。FIG. 1 is a wire bonding process diagram showing a first embodiment of the present invention.
【図２】本発明の第１実施例を示すワイヤボンディング
状態を示す上面図である。FIG. 2 is a top view showing a wire bonding state according to the first embodiment of the present invention.
【図３】本発明の第１実施例を示すワイヤボンディング
状態を示す側面図である。FIG. 3 is a side view showing a wire bonding state according to the first embodiment of the present invention.
【図４】本発明の第１実施例を示すワイヤボンディング
装置の概略構成図である。FIG. 4 is a schematic configuration diagram of a wire bonding apparatus showing a first embodiment of the present invention.
【図５】従来と本発明のＩＣ電極のワイヤボンディング
状態を示す平面図である。FIG. 5 is a plan view showing a wire bonding state of IC electrodes according to the related art and the present invention.
【図６】従来と本発明のＩＣ電極のワイヤボンディング
部の側面図である。FIG. 6 is a side view of a wire bonding portion of an IC electrode according to the related art and the present invention.
【図７】本発明の第１実施例の効果の説明図である。FIG. 7 is an explanatory diagram of an effect of the first embodiment of the present invention.
【図８】本発明の第２実施例のボンディングツールの構
成図である。FIG. 8 is a configuration diagram of a bonding tool according to a second embodiment of the present invention.
【図９】本発明の第２実施例のボンディングツールによ
るワイヤボンディング状態を示す図である。FIG. 9 is a diagram showing a wire bonding state by the bonding tool according to the second embodiment of the present invention.
【図１０】従来と本発明の第２実施例のボンディングツ
ールの先端構造を示す断面図である。FIG. 10 is a sectional view showing a tip structure of a conventional bonding tool and a bonding tool according to a second embodiment of the present invention.
【図１１】従来の超音波熱圧着ワイヤボンディングの工
程図である。FIG. 11 is a process diagram of conventional ultrasonic thermocompression wire bonding.
【図１２】従来のボンディングツールの先端構造を示す
断面図である。FIG. 12 is a cross-sectional view showing a tip structure of a conventional bonding tool.
１１ ワイヤ １１ａ 突出部 １２ インナーリード １３，５１ ボンディングツール １３ａ 貫通穴 １４ クランプ １５ ＩＣチップ １６ ＩＣチップ電極 １８ ダイパッド １９ ワイヤボンディング部 ２１ ヒートブロック ３１ トランスデューサーホーン ３２ 振動子（トランスデューサー） ４１ ワイヤ立ち上がり部 11 wire 11a protruding part 12 inner lead 13,51 bonding tool 13a through hole 14 clamp 15 IC chip 16 IC chip electrode 18 die pad 19 wire bonding part 21 heat block 31 transducer horn 32 transducer (transducer) 41 wire rising part
Claims (2)
続する半導体装置のワイヤボンディング方法において、
（ａ）ワイヤを前記インナーリードを直接圧着する２ｎ
ｄボンディング後に、該インナーリード上でボンディン
グツールを微小長さだけ上昇させ、クランプを閉じワイ
ヤを固定する工程と、（ｂ）前記ボンディングツールを
前記ＩＣチップ電極から前記インナーリードの延長方向
へ移動し、該延長方向とは逆の方向へ曲げられ、前記微
小長さだけ突出部を有するワイヤを切断する工程と、
（ｃ）前記突出部を有するワイヤを前記ＩＣチップ電極
上に直接圧着する１ｓｔボンディングを行う工程とから
なり、（ｄ）前記１ｓｔボンディング後は、前記２ｎｄ
ボンディングを行うことを特徴とする半導体装置のワイ
ヤボンディング方法。1. A wire bonding method for a semiconductor device for connecting an IC chip electrode and an inner lead, comprising:
(A) 2n for directly crimping the wire to the inner lead
d) After bonding, raising the bonding tool on the inner lead by a very small length, closing the clamp to fix the wire, and (b) moving the bonding tool from the IC chip electrode in the extension direction of the inner lead. , A step of cutting a wire that is bent in a direction opposite to the extension direction and has a protrusion by the minute length,
(C) a step of performing 1st bonding in which the wire having the protruding portion is directly pressure-bonded onto the IC chip electrode, and (d) after the 1st bonding, the 2nd
A wire bonding method for a semiconductor device, which comprises bonding.
続する半導体装置のワイヤボンディング装置において、
（ａ）超音波と荷重を印加できるトランスデューサーホ
ーンと、（ｂ）該トランスデューサーホーンへの取付部
が略円柱形であり、かつその下部が略円錐形であり、中
央部にワイヤを通すためのストレートな貫通穴を具備す
るボンディングツールとを具備する半導体装置のワイヤ
ボンディング装置。2. A wire bonding device for a semiconductor device, which connects an IC chip electrode and an inner lead,
(A) A transducer horn capable of applying ultrasonic waves and a load, and (b) a mounting portion to the transducer horn is a substantially cylindrical shape, and a lower portion thereof is a substantially conical shape, and a wire is passed through the central portion. And a wire bonding device for a semiconductor device, which comprises a bonding tool having a straight through hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6296162A JPH08153756A (en) | 1994-11-30 | 1994-11-30 | Method and apparatus for wire bonding of semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6296162A JPH08153756A (en) | 1994-11-30 | 1994-11-30 | Method and apparatus for wire bonding of semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08153756A true JPH08153756A (en) | 1996-06-11 |
Family
ID=17829966
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6296162A Withdrawn JPH08153756A (en) | 1994-11-30 | 1994-11-30 | Method and apparatus for wire bonding of semiconductor devices |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08153756A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010041061A (en) * | 2004-03-05 | 2010-02-18 | Seiko Epson Corp | Liquid jet head |
-
1994
- 1994-11-30 JP JP6296162A patent/JPH08153756A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010041061A (en) * | 2004-03-05 | 2010-02-18 | Seiko Epson Corp | Liquid jet head |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6946380B2 (en) | Method for forming bump, semiconductor element having bumps and method of manufacturing the same, semiconductor device and method of manufacturing the same, circuit board, and electronic equipment | |
| US7314818B2 (en) | Semiconductor device and method of manufacturing the same, circuit board, and electronic equipment | |
| US6311890B1 (en) | Concave face wire bond capillary | |
| US6921016B2 (en) | Semiconductor device and method of manufacturing the same, circuit board, and electronic equipment | |
| JP2004247672A (en) | Method of forming bump and method for wire bonding | |
| WO2014171160A1 (en) | Semiconductor device and manufacturing method for semiconductor device | |
| JP3762475B2 (en) | Wire bonding method and semiconductor device | |
| JPH10512399A (en) | Method for electrically connecting a semiconductor chip to at least one contact surface | |
| JP3049515B2 (en) | Wire bonding method | |
| JPH08153756A (en) | Method and apparatus for wire bonding of semiconductor devices | |
| JPH08115945A (en) | Manufacture of semiconductor device | |
| JPH1116934A (en) | Wire-bonding method | |
| JP3322642B2 (en) | Method for manufacturing semiconductor device | |
| JPH0530058B2 (en) | ||
| JPH10112479A (en) | Method of connecting boards | |
| JP2005167178A (en) | Semiconductor device and wire bonding method | |
| TWI816255B (en) | Wire bonding structure, bonding structure forming method, and electronic device | |
| JPH0982742A (en) | Wire bonding method | |
| JP2733418B2 (en) | Method for manufacturing semiconductor device | |
| JPH09129645A (en) | Bump electrode forming method | |
| JP3246265B2 (en) | Electronic component using bonding wire, method of manufacturing the same, and method of forming wire | |
| JPH04123434A (en) | Bump formation | |
| JP2009070930A (en) | Semiconductor device and its manufacturing method | |
| JPH02122530A (en) | Wire bonding | |
| JPH03127844A (en) | Bonding equipment and bonding method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20020205 |