JP4007917B2 - Semiconductor device and manufacturing method thereof - Google Patents
Semiconductor device and manufacturing method thereof Download PDFInfo
- Publication number
- JP4007917B2 JP4007917B2 JP2003006081A JP2003006081A JP4007917B2 JP 4007917 B2 JP4007917 B2 JP 4007917B2 JP 2003006081 A JP2003006081 A JP 2003006081A JP 2003006081 A JP2003006081 A JP 2003006081A JP 4007917 B2 JP4007917 B2 JP 4007917B2
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- electrode
- wire
- electrode pad
- bonding
- chip
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Abstract
Description
【0001】
【発明の属する技術分野】
本発明の半導体装置及びその製造方法は、種々の電流を授受する電極パッドが複数形成された半導体素子において、同一径のボンディングワイヤーにより、全ての電極パッドに対し電気的に接続する技術に関する。
【0002】
【従来の技術】
例えば、LSIへの電源電圧の供給は、半導体チップ上に設けた電極パッドとリード端子とをボンディングワイヤにより接続することで行っている。また、同様に、半導体チップ上に形成されたその他の電極パッドもその他のリード端子とボンディングワイヤにより接続している。
【0003】
従来の電力用半導体装置では、中でもチップの表面電極と外部電極との接続方法としてはワイヤボンディング法がある。そして、例えば、IGBT(Insulated−Gate−Bipolar−Transistor)チップ上には、エミッタ電極とゲート電極が形成されている。そして、それぞれの電極パッドとリードとが金属細線により接続されている。このとき、大電流を授受するエミッタ電極は多数形成されたり、個々のエミッタ電極の形成領域を大きくし、金属細線をワイヤボンディングし、対応していた(例えば、特許文献1。)。
【0004】
【特許文献1】
特開平5−206449号公報(第13−14頁、第1−3図)
【0005】
【発明が解決しようとする課題】
上述したように、従来の半導体装置では、例えば、エミッタ電極等の電極に流れる電流容量に応じて、接続する金属細線の太さを可変したり、または、半導体チップ表面に複数の電極パッドを形成したり、することで対応している。
【0006】
そして、電極パッドの電流容量に応じて金属細線の太さを可変とする場合には、一回のワイヤーボンディング工程で全て電極パッドと接続することが出来ず、ボンディング時間を多大に要し、作業効率は悪く量産性が向上しないという問題があった。また、全ての電極パッドに対し、金属細線の太さを統一する場合には、最大の電流容量を有する電極パッドに対する金属細線の太さに統一する必要がある。そのため、この場合には、金属細線による配線抵抗が大きくなり、電力消費が増加してしまい、半導体特性が悪化するという問題があった。
【0007】
一方、半導体チップ表面に複数の電極パッドを形成し、対応する場合では、金属細線の太さは、他の電極パッド上に接続する金属細線と同様に細い太さのもので対応できる。しかしながら、半導体チップ表面では、電極パッドを形成するための領域が必要となり、チップ面積を縮小することが困難であるという問題があった。また、電極パッドの形成される任意の半導体チップ表面上でワイヤーボンディングが行われる為、ワイヤーボンディング時の振動等による機械的ストレスにより、シリコン酸化膜等から成る層間絶縁膜にクラックが入るという問題があった。
【0008】
【課題を解決するための手段】
上述した従来の課題に鑑みてなされたもので、本発明の半導体装置では、半導体素子の一主面上には電流を授受する複数の電極パッドが形成され、少なくとも1つの該電極パッド上にバンプ電極が形成された半導体装置において、前記電極パッドには、少なくとも2本以上のボンディングワイヤがステッチボンディングにより接続されている前記バンプ電極を1つ以上有することを特徴とする。従って、本発明の半導体装置では、1つの電極パッド上のバンプ電極に対し、複数のボンディングワイヤを接続することができる。そのことで、半導体素子表面での電極パッド形成領域を縮小することが可能となり、半導体素子自体の微細化を実現することができる。
【0009】
更に、本発明の半導体装置では、前記複数のボンディングワイヤが接続する前記バンプ電極の形成された前記電極パッドは、その他の前記電極パッドより大電流を授受する電極パッドであることを特徴とする。従って、本発明の半導体装置では、全ての電極パッドに対し、電流容量の小さい電極パッドに対応する金属細線を用いることができる。そのことで、金属細線による抵抗値を大幅に低減することができるので、金属細線抵抗による電力消費を改善することができる。
【0010】
また、本発明の半導体装置の製造方法では、一主面上に電流を授受する複数の電極パッドが形成された半導体素子を準備し、前記半導体素子を所望の領域に固着した後、所望の前記電極パッドにバンプ電極を形成し、前記バンプ電極の少なくとも1つには、ボンディングワイヤをステッチボンディングにより少なくとも2本以上接続することを特徴とする。従って、本発明の半導体装置の製造法では、電極パッド上に形成されたバンプ電極に対し、複数本の金属細線を接続することが可能である。そのことで、半導体素子に対し、ワイヤボンディング時の振動等による機械的ストレスの影響の少ない領域に、必要最小限の電極パッドを形成することが可能となる。
【0011】
【発明の実施の形態】
以下に、本発明における半導体装置およびその製造方法において、図1〜図5を参照として説明する。特に、IC(Integrated Circuits)チップの電極パッド上における金属細線の接続構造及びその製造方法について説明する。図1(A)はICチップの電極パッドとリードとを金属細線を介して接続する状況を説明する平面図であり、図1(B)はICチップの電極パッド間を金属細線を介して接続する状況を説明する平面図であり、図2(A)及び(B)はICチップの電極パッド上の金属細線の接続状況を説明する平面図であり、図3(A)及び(B)はICチップの電極パッド間の接続状況を説明する図である。
【0012】
図1(A)に示す本実施の形態では、表面に複数の電極パッド1が形成されているICチップ2が、例えば、リードフレームに形成されたアイランド3上に、例えば、Agペースト等の導電ペーストを介して固着されている。また、リードフレームには、アイランド3の周囲を囲むように複数のリード4が形成されている。そして、ICチップ2の電極パッド部1とリード4とは、それぞれ金属細線5を介して電気的に接続している。尚、本実施の形態では、リードフレームは、例えば、銅を主材料とするフレームから成る。しかし、リードフレームの材料としては、Fe−Niを主材料としても良いし、他の金属材料でも良い。また、リードフレームを用いる場合に、特に、限定する必要はなく、プリント基板、導電箔を所望のパターンに加工した場合でも良い。
【0013】
また、図1(B)に示す本実施の形態では、例えば、リードフレームに第1のアイランド6と第2のアイランド7とが多少離間して連続して形成されている。そして、第1及び第2のアイランド6、7上には、それぞれICチップ8、9が例えば、Agペースト等の導電ペーストを介して固着されている。また、リードフレームには、第1及び第2のアイランド6、7の周囲を囲むように複数のリード11が形成されている。そして、ICチップ8、9の電極パッド部10、15とリード11とは、それぞれ金属細線12を介して電気的に接続している。また、本実施の形態では、ICチップ8、9の相対峙する側辺の近傍領域に形成された電極パッド10、15間は、直接、金属細線12を介して電気的に接続している。尚、本実施の形態においても、同様に、リードフレームの材料としては、銅を主材料とするフレームに限定する必要はなく、Fe−Niを主材料としても良いし、他の金属材料でも良い。また、リードフレームを用いる場合に、特に、限定する必要はなく、プリント基板、導電箔を所望のパターンに加工した場合でも良い。
【0014】
また、図示の如く、金属細線の一端に示す丸印はボールボンディングが行われる側を示している。そして、金属細線の他端がICチップの電極パッドと接続する場合には、図示していないが、電極パッド上にはバンプ電極13(図2参照)が形成されている。
【0015】
図2(A)及び(B)に示すように、本実施の形態では、ICチップ2の電極パッド1上にバンプ電極13形成した後、そのバンプ電極13に対し複数の金属細線5がステッチボンディングにより接続されている。つまり、本実施の形態では、図1(A)に示すように、電極パッド1とリード4とを金属細線5を介して接続する際には、リード4側はボールボンディングにより接続し、電極パッド1側はステッチボンディングにより接続している。一方、図1(B)に示すように、電極パッド10、15間を金属細線12を介して接続する際には、一方の電極パッド10上にはバンプ電極13を形成する。そして、バンプ電極13を形成しない他方の電極パッド10側はボールボンディングにより接続し、バンプ電極13を形成した電極パッド10側はステッチボンディングにより接続している。
【0016】
通常、金属細線を接続するワイヤボンディングは、一端はボールボンディングにより接続し、他端はステッチボンディングにより接続する。そして、ステッチボンディングが行われる側では、金属細線をキャピラリーで強く押さえ、力で引きちぎるため、ステッチボンディングされた領域にはストレスが加わる。特に、ICチップの電極パッド上で、直接、ステッチボンディングが行われると、その衝撃により、電極パッドの下部に位置するシリコン酸化膜等から成る層間絶縁膜にクラックが入るという問題があった。しかしながら、本実施の形態における構造では、衝撃が大きいステッチボンディングは、バンプ電極13上で行うことができる。そのことで、本実施の形態では、上述したICチップの層間絶縁膜の破壊を抑制することができ、リードのステッチボンディングによる損傷も抑制することができる。
【0017】
そして、本実施の形態では、バンプ電極13が形成された1つの電極パッドに対し、少なくとも2本以上の金属細線5を接続することで、金属細線5として細い径のものを使用することができる。図1(A)及び(B)に示すように、ICチップ2、8、9上には、それぞれ複数の電極パッド1、10、15が形成されている。そして、電極パッド1、10、15は、ICチップ2、8、9内に形成された抵抗体、コンデンサー、トランジスタ等の多数の素子に対し電流の授受を行っている。そのため、それぞれの電極パッド1、10、15では、目的に応じて外部と授受する電流容量が異なる。例えば、Vcc(電源電極)用の電極パッド、GND(接地電極)用の電極パッドでは、外部と授受する電流容量は大きいため、接続される金属細線の径は、他の電極パッドと接続されるものよりも太くする必要がある。
【0018】
ここで、通常、ICチップ2の電極パッド1とリード4とを金属細線5を介して接続する場合、製造工程上1回のワイヤーボンディング工程で行われる。そのため、1回のワイヤーボンディング工程において、ICチップ2の電極パッド1とリード4とを接続するためには、最も大きい電流を授受する電極パッドにあわせて、金属細線の径を決める必要がある。この場合では、その他大部分である小さい電流を授受する電極パッドにおいても、同様に必要以上の太い径である金属細線により接続される。例えば、接続される金属細線の径がφ25μmで十分である電極パッドに対しても、φ38μmの径の金属細線を接続しなければならない。この構造では、径の太い金属細線を用いることで、金属細線の配線抵抗が大きく、消費電力が大きくなり、電力コストの低減を図ることができない。また、金属細線のコストの低減も図ることができない。
【0019】
一方、それぞれの電極パッドの授受する電流容量にあわせて、最適の径の金属細線を接続する場合には、1枚のICチップ2に対し、複数回のワイヤーボンディング工程が必要となる。そのため、この構造の場合には、製造コストの低減を図ることが出来ず、また、製造時間の低減も図ることが出来ない。
【0020】
しかしながら、本実施の形態の半導体装置では、外部と授受する電流容量が大きい等の所望の電極パッドでは、その電極パッドに形成されたバンプ電極13に対し、複数本の金属細線5を接続することができる。そして、ICチップ2の表面に形成される複数の電極パッド1の大部分は、Vcc用の電極パッド、GND用の電極パッドより細い径の金属細線で所望の目的を達成することができる。そのため、本実施の形態では、外部と授受する電流容量の小さい電極パッドを基準とし、金属細線の径を選択することが出来る。そして、選択したその径の金属細線により、ICチップ2上の電極パッド1に対し、1回のワイヤーボンディング工程で金属細線5を接続することができる。
【0021】
つまり、本実施の形態では、Vcc用の電極パッド、GND用の電極パッドでは、電極パッド上のバンプ電極に対し、複数本の金属細線を接続することで、所望の電流容量を外部と授受することができる。そして、その他の電極パッドでは、授受する電流容量に適した径の金属細線により外部と接続させることができる。そのことで、本実施の形態では、外部と授受する電流容量の小さい電極パッドにあわせ金属細線の径を選択できるので、金属細線の配線抵抗を低減した構造を実現することができる。一方、外部と授受する電流容量の大きい電極パッドにおいても、複数本の金属細線により所望の電流容量を確実に授受することができる。
【0022】
また、本実施の形態では、外部と授受する電流容量の大きい電極パッドでは、1つの電極パッドで複数本の金属細線を接続することができるので、電極パッドの形成面積を統一して形成することができる。つまり、外部と授受する電流容量の大小によらず、電極パッドの形成面積を統一することができる。また、外部と授受する電流容量の大きい場合にも、形成する電極パッドの数を必要最低限の数とすることができる。そのことで、ICチップサイズの低減も実現することができる。
【0023】
更に、本実施の形態では、図2(A)及び(B)に示すように、例えば、電極パッド1上のバンプ電極13に対し、2本の金属細線5をステッチボンディングにより接続する。このとき、図2(A)に示すように、1本目の金属細線と2本目の金属細線の端部が一部重なっても良いが、離間して接続する。具体的には、金属細線5がバンプ電極13と接続する付け根部分51において、少なくとも1本目と2本目の金属細線5が重ならないように接続する。一方、図2(B)では、1本目と2本目の金属細線5が、1本目の金属細線5がバンプ電極13と接続する付け根部分51で重なるように接続する場合を示す。この場合には、2本目の金属細線5を接続する際に、金属細線5をキャピラリーで強く押さえ、力で引きちぎる。この際に、既に、接続されている1本目の金属細線5に対し、歪みを生じさせ金属細線5のループの安定性を害する場合がある。
【0024】
そのため、本実施の形態では、電極パッド1上のバンプ電極13に対し、2本の金属細線5をステッチボンディングにより接続する際には、図2(A)に示すように、それぞれの金属細線5の付け根部分51が離間するように接続する。また、バンプ電極13を形成する際の凸部14上を避けて、金属細線5をステッチボンディングにより、接続することが望ましい。本実施の形態では、後述する製造方法によりバンプ電極13を形成し、その製造方法では、バンプ電極13の凸部14は安定して形成される。しかし、もし、バンプ電極13の凸部14が所望の形状に形成されなかった場合でも、その凸部14を避けて金属細線5を接続することで、金属細線5を確実に接続でき、且つ金属細線5のループの安定性を実現することができる。尚、金属細線5のループの安定性を実現することができる場合には、図2(B)に示すように、1本目の金属細線と2本目の金属細線とを重ねて接続しても問題はない。また、バンプ電極上に複数本の金属細線を接続する場合も同様である。
【0025】
そして、図3(A)及び(B)では、図1(B)においても示すように、ICチップ8、9の電極パッド10、15間を、直接、金属細線12で接続する図を示している。図3(A)では、ICチップ9の電極パッド15上にバンプ電極13を形成し、ICチップ8の電極パッド10上ではボールボンディングを行い、ICチップ9のバンプ電極13上ではステッチボンディングを行う。そして、ICチップ8とICチップ9との授受する電流容量の等しい電極パッド10同士を接続している。この際、図3(B)に示すように、図2(A)及び(B)を用いて上述した製造方法により金属細線12を接続することで、金属細線5を確実に接続でき、且つ金属細線5のループの安定性を実現している。尚、ICチップ8、9上では、電極パッド10、15に対し、直接、ステッチボンディングを行うことなく、金属細線の接続を行っている。
【0026】
次に、図4及び図5を用いて、電極パッド上にバンプ電極を形成する製造方法について説明する。
【0027】
先ず、図4(A)に示すように、集積回路網を形成したICチップ20のアルミ電極パッド21上方にキャピラリ22を移動する。キャピラリ22の中心孔23には直径が20〜30μm程度の金ワイヤ24が挿通されており、キャピラリ22上方にはワイヤ24を狭持するためのクランパ25が配置されている。キャピラリ22先端部は直径100μm程度の大きさを有する。そして、金ワイヤ24の先端部にスパーク26を飛ばしてこれを融解させ、表面張力により金ボール27(図4(B)参照)を形成する。この段階でクランパ25は閉じている。
【0028】
次に、図4(B)に示すように、キャピラリ22から飛び出たワイヤ24の先端に金ボール27が形成される。尚、金ボール27の直径はスパーク26の電流値と時間で制御され、本実施の形態では、例えば、金ボール27の直径は60〜80μm程度である。しかし、金ボール27の直径は、所望の目的に応じて任意に設計変更することができる。そして、次の作業に備え、クランパ25を開け、ワイヤ24を解放する。
【0029】
次に、図4(C)に示すように、キャピラリ22を下降させることにより、金ボール27を電極パッド21表面に当接し、一定の圧力を加える。そして、同時に、キャピラリ22を通して超音波振動を与え且つ加熱し、金ボール27と電極パッド21とを固着する。
【0030】
次に、図4(D)に示すように、金ボール27が固着した後、金ボール27と金ワイヤ24を残して、キャピラリ22を垂直に上昇させる。
【0031】
次に、図5(A)に示すように、キャピラリ22を再度垂直に下降させた後、キャピラリ22の水平方向の位置はそのままで、その先端と金ボール27の上端(平坦部)との距離28が10〜30μm程度となるような位置でキャピラリ22を停止する。金ワイヤ24の付け根付近はキャピラリ22内部に収納されず、露出した状態となる。
【0032】
次に、図5(B)に示すように、キャピラリ22を水平移動させるが、このとき、上述した距離28を維持した状態で、金ワイヤ24の直径の3分の2を超える距離29だけ移動させる。例えば、キャピラリ22の先端部の穴の直径が40μmであるときは、25〜35μm程度だけキャピラリ22を移動する。金ワイヤ24はキャピラリ22の先端部で途中まで剪断され、糸を引くように細い部分30のみで連続している状態となる。
【0033】
次に、図5(C)に示すように、金ワイヤ24と金ボール27とを細い部分30のみで連続させた状態で、再び、キャピラリ22を上昇させる。
【0034】
最後に、図5(D)に示すように、金ワイヤ24が所望の長さ(テイル長さ31)だけ突出するようにキャピラリ22を上昇させる。その後、今まで解放していたクランパ25を閉じて金ワイヤ24を狭持し、上方に引き上げることで細い部分30を完全に切断する。そして、電極パッド21上部にはバンプ電極32が形成され、キャピラリ22先端にはテイル長さ31の分だけの金ワイヤ24が残る。
【0035】
尚、本実施の形態では、上述した製造方法により電極パッド上にバンプ電極を形成したが、この製造方法に限定する必要はない。本実施の形態以外の方法で電極パッド上にバンプ電極を形成した場合においても、上述した金属細線の接続構造及び接続方法を実現することができる。そして、その他、本発明の要旨を逸脱しない範囲で、種々の変更が可能である。
【0036】
【発明の効果】
上述したように、第1に、本発明の半導体装置では、ICチップの電極パッド上に形成されたバンプ電極に対し、少なくとも2本以上の金属細線を接続することができる。そのことで、外部と授受する電流容量が大きい電極パッドでは、複数本の金属細線を接続し、外部と授受する電流容量が小さい電極パッドでは、1本の金属細線を接続する。その結果、外部と授受する電流容量が小さい電極パッドを基準とし、金属細線の径を選択することができるので、金属細線の配線抵抗の低減を実現することができる。
【0037】
第2に、本発明の半導体装置では、外部と授受する電流容量が小さい電極パッドを基準とし、金属細線の径を選択することができる。そのことで、ICチップ上の全ての電極パッドに対し、細い径の金属細線でワイヤーボンディングを行うことができる。その結果、金属細線のコストを低減でき、且つ、細い径の金属細線であるが、大きい電流容量を外部と授受することができる。
【0038】
第3に、本発明の半導体装置の製造方法では、外部と授受する電流容量が小さい電極パッドを基準とし、金属細線の径を選択し、その径の金属細線でIC上の所望の電極パッドに対し、ワイヤーボンディングを行う。そのことで、同一径の金属細線を用いることで、1回のワイヤーボンディング工程で、種々の電流容量を外部と授受する電極パッドに金属細線を接続することができる。その結果、製造コストを低減し、製造時間の短縮を実現することができる。
【図面の簡単な説明】
【図1】本発明の半導体装置を説明するための(A)平面図(B)平面図である。
【図2】本発明の半導体装置及びその製造方法を説明するための(A)平面図(B)平面図である。
【図3】本発明の半導体装置及び製造方法を説明するための(A)平面図(B)斜視図である。
【図4】本発明の半導体装置の製造方法を説明するための(A)断面図(B)断面図(C)断面図(D)断面図である。
【図5】本発明の半導体装置の製造方法を説明するための(A)断面図(B)断面図(C)断面図(D)断面図である。[0001]
BACKGROUND OF THE INVENTION
The semiconductor device and the manufacturing method thereof according to the present invention relates to a technique for electrically connecting all electrode pads with bonding wires having the same diameter in a semiconductor element in which a plurality of electrode pads for transmitting and receiving various currents are formed.
[0002]
[Prior art]
For example, power supply voltage is supplied to an LSI by connecting an electrode pad provided on a semiconductor chip and a lead terminal by a bonding wire. Similarly, other electrode pads formed on the semiconductor chip are also connected to other lead terminals by bonding wires.
[0003]
In a conventional power semiconductor device, there is a wire bonding method as a connection method between the surface electrode of the chip and the external electrode. For example, an emitter electrode and a gate electrode are formed on an IGBT (Insulated-Gate-Bipolar-Transistor) chip. And each electrode pad and lead | read | reed are connected with the metal fine wire. At this time, a large number of emitter electrodes that transmit and receive a large current are formed, or the formation area of each emitter electrode is enlarged, and a thin metal wire is wire-bonded (for example, Patent Document 1).
[0004]
[Patent Document 1]
JP-A-5-206449 (pages 13-14, Fig. 1-3)
[0005]
[Problems to be solved by the invention]
As described above, in a conventional semiconductor device, for example, the thickness of a thin metal wire to be connected is changed according to the current capacity flowing through an electrode such as an emitter electrode, or a plurality of electrode pads are formed on the surface of a semiconductor chip. It corresponds by doing.
[0006]
And, if the thickness of the fine metal wire is made variable according to the current capacity of the electrode pad, it cannot be connected to the electrode pad in a single wire bonding process, requiring a lot of bonding time, There was a problem that efficiency was bad and mass productivity was not improved. Moreover, when unifying the thickness of a metal fine wire with respect to all the electrode pads, it is necessary to unify to the thickness of the metal thin wire with respect to the electrode pad which has the largest current capacity. Therefore, in this case, there is a problem that the wiring resistance due to the fine metal wire is increased, the power consumption is increased, and the semiconductor characteristics are deteriorated.
[0007]
On the other hand, in the case where a plurality of electrode pads are formed on the surface of the semiconductor chip and corresponding, the thickness of the metal fine wire can be dealt with as thin as the metal thin wire connected on the other electrode pad. However, on the surface of the semiconductor chip, a region for forming an electrode pad is required, and there is a problem that it is difficult to reduce the chip area. In addition, since wire bonding is performed on the surface of an arbitrary semiconductor chip on which electrode pads are formed, there is a problem in that an interlayer insulating film made of a silicon oxide film cracks due to mechanical stress due to vibration during wire bonding. there were.
[0008]
[Means for Solving the Problems]
In view of the above-described conventional problems, in the semiconductor device of the present invention, a plurality of electrode pads for transmitting and receiving current are formed on one main surface of a semiconductor element, and bumps are formed on at least one of the electrode pads. In the semiconductor device in which the electrode is formed, the electrode pad has one or more bump electrodes to which at least two bonding wires are connected by stitch bonding. Therefore, in the semiconductor device of the present invention, a plurality of bonding wires can be connected to the bump electrode on one electrode pad. As a result, the electrode pad formation region on the surface of the semiconductor element can be reduced, and miniaturization of the semiconductor element itself can be realized.
[0009]
Furthermore, in the semiconductor device of the present invention, the electrode pad on which the bump electrode to which the plurality of bonding wires are connected is an electrode pad that transfers a larger current than the other electrode pads. Therefore, in the semiconductor device of the present invention, a thin metal wire corresponding to an electrode pad having a small current capacity can be used for all the electrode pads. As a result, the resistance value due to the fine metal wire can be greatly reduced, so that the power consumption due to the fine metal wire resistance can be improved.
[0010]
Further, in the method for manufacturing a semiconductor device of the present invention, a semiconductor element having a plurality of electrode pads for transmitting and receiving current on one main surface is prepared, and the semiconductor element is fixed to a desired region, and then the desired device A bump electrode is formed on the electrode pad, and at least two bonding wires are connected to at least one of the bump electrodes by stitch bonding. Therefore, in the method for manufacturing a semiconductor device of the present invention, it is possible to connect a plurality of fine metal wires to the bump electrodes formed on the electrode pads. As a result, it is possible to form the minimum necessary electrode pads on the semiconductor element in a region where there is little influence of mechanical stress due to vibration during wire bonding.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, a semiconductor device and a manufacturing method thereof according to the present invention will be described with reference to FIGS. In particular, a connection structure of metal thin wires on an electrode pad of an IC (Integrated Circuits) chip and a manufacturing method thereof will be described. FIG. 1A is a plan view for explaining a situation in which the electrode pads and leads of the IC chip are connected through the fine metal wires, and FIG. 1B is a connection between the electrode pads of the IC chips through the fine metal wires. 2 (A) and 2 (B) are plan views for explaining the connection state of the fine metal wires on the electrode pads of the IC chip, and FIGS. 3 (A) and 3 (B) are diagrams. It is a figure explaining the connection condition between the electrode pads of an IC chip.
[0012]
In this embodiment shown in FIG. 1A, an
[0013]
Further, in the present embodiment shown in FIG. 1B, for example, the first island 6 and the second island 7 are continuously formed on the lead frame with some separation. Then,
[0014]
Further, as shown in the figure, a circle at one end of the fine metal wire indicates the side on which ball bonding is performed. When the other end of the fine metal wire is connected to the electrode pad of the IC chip, the bump electrode 13 (see FIG. 2) is formed on the electrode pad, although not shown.
[0015]
As shown in FIGS. 2A and 2B, in the present embodiment, after the
[0016]
Usually, the wire bonding for connecting the thin metal wire, one end is connected by ball bonding, and the other end connected by stitchbonded Dinh grayed. On the side where the stitch bonding is performed, the metal thin wire is strongly pressed by the capillary and is torn off by force, so that stress is applied to the stitch bonded region. In particular, when stitch bonding is performed directly on an electrode pad of an IC chip, there is a problem that an interlayer insulating film made of a silicon oxide film or the like located under the electrode pad cracks due to the impact. However, in the structure in the present embodiment, stitch bonding with a large impact can be performed on the
[0017]
And in this Embodiment, the thing of a thin diameter can be used as the metal
[0018]
Here, normally, when the electrode pad 1 of the
[0019]
On the other hand, when a thin metal wire having an optimum diameter is connected in accordance with the current capacity transferred by each electrode pad, a plurality of wire bonding steps are required for one
[0020]
However, in the semiconductor device of the present embodiment, a plurality of
[0021]
That is, in the present embodiment, in the Vcc electrode pad and the GND electrode pad, a plurality of fine metal wires are connected to the bump electrode on the electrode pad, and a desired current capacity is exchanged with the outside. be able to. The other electrode pads can be connected to the outside by a thin metal wire having a diameter suitable for the current capacity to be exchanged. As a result, in this embodiment, the diameter of the fine metal wire can be selected according to the electrode pad having a small current capacity to be exchanged with the outside, so that a structure with reduced wiring resistance of the fine metal wire can be realized. On the other hand, even in an electrode pad having a large current capacity to be exchanged with the outside, a desired current capacity can be reliably exchanged with a plurality of thin metal wires.
[0022]
Further, in the present embodiment, a plurality of fine metal wires can be connected by one electrode pad with an electrode pad having a large current capacity to be exchanged with the outside, so that the formation area of the electrode pad should be unified. Can do. That is, the formation area of the electrode pad can be unified regardless of the size of the current capacity exchanged with the outside. Further, even when the current capacity to be exchanged with the outside is large, the number of electrode pads to be formed can be reduced to the minimum necessary number. As a result, a reduction in IC chip size can also be realized.
[0023]
Furthermore, in this embodiment, as shown in FIGS. 2A and 2B, for example, two
[0024]
For this reason, in the present embodiment, when the two
[0025]
3A and 3B show a diagram in which the
[0026]
Next, a manufacturing method for forming bump electrodes on the electrode pads will be described with reference to FIGS.
[0027]
First, as shown in FIG. 4A, the capillary 22 is moved above the
[0028]
Next, as shown in FIG. 4B, a
[0029]
Next, as shown in FIG. 4C, the capillary 22 is lowered to bring the
[0030]
Next, as shown in FIG. 4D, after the
[0031]
Next, as shown in FIG. 5A, after the capillary 22 is lowered again vertically, the distance between the tip of the capillary 22 and the upper end (flat portion) of the
[0032]
Next, as shown in FIG. 5B, the capillary 22 is moved horizontally. At this time, the capillary is moved by a distance 29 exceeding two-thirds of the diameter of the
[0033]
Next, as shown in FIG. 5C, the capillary 22 is raised again in a state in which the
[0034]
Finally, as shown in FIG. 5D, the capillary 22 is raised so that the
[0035]
In this embodiment, the bump electrode is formed on the electrode pad by the manufacturing method described above, but it is not necessary to limit to this manufacturing method. Even when the bump electrode is formed on the electrode pad by a method other than the present embodiment, the above-described metal thin wire connection structure and connection method can be realized. Various other modifications can be made without departing from the scope of the present invention.
[0036]
【The invention's effect】
As described above, first, in the semiconductor device of the present invention, at least two or more fine metal wires can be connected to the bump electrodes formed on the electrode pads of the IC chip. Therefore, a plurality of fine metal wires are connected to an electrode pad having a large current capacity to be exchanged with the outside, and a single fine metal wire is connected to an electrode pad having a small current capacity to be exchanged with the outside. As a result, the diameter of the fine metal wire can be selected on the basis of the electrode pad having a small current capacity to be exchanged with the outside, so that the wiring resistance of the fine metal wire can be reduced.
[0037]
Secondly, in the semiconductor device of the present invention, the diameter of the thin metal wire can be selected with reference to an electrode pad having a small current capacity to be exchanged with the outside. As a result, it is possible to perform wire bonding to all electrode pads on the IC chip with thin metal wires having a small diameter . As a result, it is possible to reduce the cost of the fine metal wire, and, is a thin metal wire of small diameter, it is possible to exchange a large current capacity and the outside.
[0038]
Third, the method of manufacturing a semiconductor device of the present invention, with reference to the electrode pads current capacity is small exchanges with the outside, and select the size of the fine metal wire, the desired electrode pads on the IC by a metal thin wire of a diameter On the other hand, wire bonding is performed. Thus, by using a thin metal wire having the same diameter, the thin metal wire can be connected to an electrode pad that exchanges various current capacities with the outside in one wire bonding step. As a result, the manufacturing cost can be reduced and the manufacturing time can be shortened.
[Brief description of the drawings]
FIG. 1A is a plan view and FIG. 1B is a plan view for explaining a semiconductor device of the present invention.
2A is a plan view and FIG. 2B is a plan view for explaining a semiconductor device and a manufacturing method thereof according to the present invention.
3A is a plan view and FIG. 3B is a perspective view for explaining a semiconductor device and a manufacturing method according to the present invention.
FIGS. 4A and 4B are a cross-sectional view of (A) a cross-sectional view, a cross-sectional view (C), and a cross-sectional view (D) for explaining a method of manufacturing a semiconductor device according to the present invention;
5A is a cross-sectional view for explaining a method of manufacturing a semiconductor device of the present invention, FIG. 5B is a cross-sectional view, FIG. 5C is a cross-sectional view, and FIG.
Claims (1)
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