JP3344235B2 - ワイヤボンディング方法 - Google Patents

ワイヤボンディング方法

Info

Publication number
JP3344235B2
JP3344235B2 JP26637296A JP26637296A JP3344235B2 JP 3344235 B2 JP3344235 B2 JP 3344235B2 JP 26637296 A JP26637296 A JP 26637296A JP 26637296 A JP26637296 A JP 26637296A JP 3344235 B2 JP3344235 B2 JP 3344235B2
Authority
JP
Japan
Prior art keywords
bonding
wire
conductor
bump
capillary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP26637296A
Other languages
English (en)
Other versions
JPH10112471A (ja
Inventor
幸宏 前田
俊夫 鈴木
長坂　　崇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=17430034&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP3344235(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Denso Corp filed Critical Denso Corp
Priority to JP26637296A priority Critical patent/JP3344235B2/ja
Priority to US08/944,822 priority patent/US6079610A/en
Priority to DE1997144266 priority patent/DE19744266B4/de
Publication of JPH10112471A publication Critical patent/JPH10112471A/ja
Application granted granted Critical
Publication of JP3344235B2 publication Critical patent/JP3344235B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

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    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B23K20/005—Capillary welding
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  • Engineering & Computer Science (AREA)
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  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】
【０００１】
【発明の属する技術分野】本発明は、２つの導体間をワ
イヤボンディングするワイヤボンディング方法に関す
る。
【０００２】
【従来の技術】ワイヤボンディングを行う場合、貫通孔
にＡｕワイヤが挿通されたキャピラリを用い、トーチ電
極からの放電によりキャピラリから突出したＡｕワイヤ
の先端にボールを形成し、キャピラリを半導体チップ上
に位置させて１次ボンディングを行った後、キャピラリ
を配線上に移動させて２次ボンディングを行うことによ
り、半導体チップと配線間をワイヤボンディングする方
法が一般的に用いられている。
【０００３】この場合、配線材料が、例えばＣｕ、Ｎ
ｉ、フラッシュＡｕめっき等のようにＡｕワイヤと接合
性の悪い材料であると、配線上に直接ボンディングを行
うことができないため、ボンディングを行う部分に、予
めＡｇメッキあるいはＡｕ厚膜等の下地を形成するよう
にしている。しかしながら、そのような下地を設けるの
は実用上好ましくなく、配線材料がＡｕワイヤと接合性
の悪い材料であっても、配線上に直接ボンディングでき
るようにする方法が望まれている。
【０００４】特開平３−１８３１３９号公報には、予め
配線上にボールボンディングを行ってバンプを形成して
おき、半導体チップ上に１次ボンディングを行った後、
バンプ上に２次ボンディングを行ってワイヤボンディン
グを行う方法が記載されている。この方法によれば、配
線材料がＡｕワイヤと接合性が悪い材料であってもバン
プの形成により配線上に直接ボンディングを行うことが
できる。
【０００５】
【発明が解決しようとする課題】しかしながら、上記公
報に記載された方法では、ボールボンディングを行って
バンプを形成するとき、Ａｕワイヤを上方へ引っ張って
バンプからＡｕワイヤを切り離すようにしている。この
ため、図７（ａ）に示すように、バンプ６上にテールＡ
が発生し、バンプ６上に２次ボンディングを行うとき、
バンプ６上のテールＡにＡｕワイヤ５が接合され、図７
（ｂ）に示すように、さらに大きなテールＢが発生する
ことがある。
【０００６】このようなテールＡ、Ｂが発生すると、テ
ールＡ、Ｂが倒れた場合、他の配線とショートを起こす
可能性がある。また、図７（ｂ）に示すように、テール
ＡにＡｕワイヤ５が接合することによって、Ａｕワイヤ
を上方に引っ張ったときにその切断位置にばらつきが生
じ、キャピラリから突出するＡｕワイヤの長さにばらつ
きが生じる。上述したように、キャピラリから突出した
Ａｕワイヤの先端とトーチ電極との間で放電を行ってＡ
ｕワイヤの先端にボールを形成するため、キャピラリか
ら突出するＡｕワイヤの長さにばらつきがでると、Ａｕ
ワイヤの先端に形成されるボールの径にもばらつきが生
じ、次にワイヤボンディングする場合の接合強度が変化
するという問題がある。また、キャピラリからＡｕワイ
ヤが突出しないような切断が行われると、トーチ電極と
の間で放電が行われなくなる。ワイヤボンディング装置
は、その放電状態を監視しており、トーチ電極との間で
放電が行われない場合には、装置を停止させる。
【０００７】従って、上記したテールＡ、Ｂの発生によ
り種々の問題が生じる。本発明は、導体上に直接ボンデ
ィングできるようにするとともに、上記したテールの発
生を抑制することを目的とする。
【０００８】
【課題を解決するための手段】上記目的を達成するた
め、請求項１に記載の発明においては、第２導体（４）
上にボールボンディングを行ってバンプ（６）を形成
し、そのウェッジボンディングをバンプ（６）に対し第
１導体（３ａ）と反対側の位置にて行い、第１導体（３
ａ）上に１次ボンディングを行った後、バンプ（６）に
対し記第１導体（３ａ）側からワイヤ（５）をルーピン
グしてバンプ（６）上に２次ボンディングを行い、第１
導体（３ａ）と第２導体（４）間をワイヤボンディング
することを特徴としている。
【０００９】従って、バンプ（６）を形成した後、その
ウェッジボンディングをバンプ（６）に対し第１導体
（３ａ）と反対側の位置にて行うようにしているから、
図７（ａ）のようなテールの発生が抑制され、その結
果、バンプ（６）上に２次ボンディングを行う場合も図
７（ｂ）に示すようなテールの発生が抑制される。請求
項２に記載の発明においては、バンプ（６）の中心位置
から１２５μｍ以上１７５μｍ以下の距離にてウェッジ
ボンディングを行い、バンプ（６）の中心位置から第１
導体（３ａ）と反対側の方向に０μｍ以上２０μｍ以下
の距離にて２次ボンディングを行うことを特徴としてい
る。
【００１０】このような設定とすることにより、後述す
る図５の結果に示すように、テールの発生等の不具合に
対し非常に良好な結果を得ることができる。この場合、
請求項３に記載の発明のように、ウェッジボンディング
の方向に対するウェッジボンディングの方向の角度を±
４５°の範囲内とすれば、テールの発生等の不具合に対
し良好な結果を維持することができる。
【００１１】請求項４に記載の発明においては、キャピ
ラリ（７）を第２導体（４）上に位置させてボールボン
ディングを行い、第２導体（４）上にバンプ（６）を形
成した後、キャピラリ（７）を移動させ第２導体（４）
上に押しつけてバンプ（６）から延びるワイヤ（５）を
切断し、第１導体（３ａ）上に１次ボンディングを行っ
た後、キャピラリ（７）をバンプ（６）上に位置させキ
ャピラリ（７）内のワイヤ（５）をバンプ（６）から延
びるワイヤ（５）と接合し、その接合部でキャピラリ
（７）内のワイヤ（５）を切断して、２次ボンディング
を行うことを特徴としている。
【００１２】この場合も、請求項１に記載の発明と同
様、テールの発生を抑制したワイヤボンディングを行う
ことができる。なお、上記した接合は、請求項５に記載
の発明のように、バンプ（６）から延びるワイヤ（５）
の屈曲部（６ａ）を貫通孔（７ａ）内に位置させ、貫通
孔（３ａ）の内壁により屈曲部（６ａ）を貫通孔（３
ａ）内のワイヤ（５）に押しつけて行うことができる。
【００１３】なお、特許請求の範囲の欄および課題を達
成するための手段の欄に記載した括弧内の符号は後述す
る実施形態記載の具体的な手段との対応関係を示すため
のものである。
【００１４】
【発明の実施の形態】図１に、本発明の一実施形態に係
るワイヤボンディング方法を用いて半導体チップと配線
間をワイヤボンディングした状態を示す。回路基板（セ
ラミック基板やプリント基板などの基板、もしくはリー
ドフレーム）１上に、ダイマウントペースト２により半
導体チップ３がダイマウントされている。また回路基板
１上に、Ｃｕ、Ｎｉ、フラッシュＡｕめっきなどＡｕワ
イヤ５と接合性の悪い配線材料を用いた配線４が形成さ
れている。
【００１５】本実施形態においては、半導体チップ３の
ボンディングパッド３ａと配線４との間をＡｕワイヤ５
を用いてワイヤボンディングする場合に、配線４の上に
予めバンプ６を形成しておき、その後、半導体チップ３
のボンディングパッド３ａとバンプ６間にループボンデ
ィングを行うようにしている。次に、本発明の一実施形
態に係るワイヤボンディング方法について、図２に従っ
て説明する。 〔図２（ａ）の工程〕キャピラリ７の貫通孔７ａにＡｕ
ワイヤ５を挿通した状態で、トーチ電極８からの放電に
より、キャピラリ７から突出したＡｕワイヤ５の先端に
ボール５ａを形成する。 〔図２（ｂ）の工程〕キャピラリ７を配線４上に位置さ
せてボールボンディングを行う。このボールボンディン
グによってバンプ６を形成する。 〔図２（ｃ）の工程〕キャピラリ７を後方（バンプ６に
対し半導体チップ３と反対側の方向）に移動させてウェ
ッジボンディングを行う。この場合、キャピラリ７を配
線４上に押しつけてバンプ６から延びるＡｕワイヤ５を
切断する。 〔図２（ｄ）の工程〕キャピラリ７を上方に移動させ、
トーチ電極８からの放電によりＡｕワイヤ５の先端にボ
ール５ａを形成する。 〔図２（ｅ）の工程〕キャピラリ７を半導体チップ３の
ボンディングパッド３ａ上に位置させ、１次ボンディン
グを行う。 〔図２（ｆ）の工程〕Ａｕワイヤ５をルーピングして、
キャピラリ７をバンプ６上に位置させ２次ボンディング
を行う。この場合、キャピラリ７の中心とバンプ６の中
心が一致するようにする。 〔図２（ｇ）の工程〕キャピラリ７を上方に移動させ、
トーチ電極８からの放電によりＡｕワイヤ５の先端にボ
ール５ａを形成し、次のワイヤボンディングに移行す
る。
【００１６】上記したワイヤボンディング方法によれ
ば、ボールボンディングによりバンプ６を形成した後
に、そのウェッジボンディングをバンプ６後方の配線４
上にて行っている。従って、バンプ６からのＡｕワイヤ
５はバンプ６の後方に屈曲した形状になり、図７（ａ）
で示したようなテールＡは発生しない。また、バンプ６
上に２次ボンディングを行う場合、図３（ａ）に示すよ
うに、バンプ６から延びるＡｕワイヤ５の屈曲部６ａが
貫通孔７ａ内に入り込むようにキャピラリ７を位置させ
たとき、貫通孔７ａの内壁により屈曲部６ａが図の矢印
方向に押され、Ａｕワイヤ５が貫通孔７ａの他側の内壁
にて押しつぶされた状態で、Ａｕワイヤ５と屈曲部６ａ
が接合される。そして、キャピラリ７を上方に移動さ
せ、Ａｕワイヤ５を引っ張ったとき、図３（ｂ）に示す
ように、その接合部の上端位置（図の点線で示す位置）
で、Ａｕワイヤ５が切断される。
【００１７】従って、図７（ｂ）で示したようなテール
Ｂの発生が抑制される。また、Ａｕワイヤ５の切断位置
も接合部の上端位置でほぼ一定となるため、キャピラリ
７から突出するＡｕワイヤ５の長さがほぼ一定になり、
次のワイヤボンディングを行うとき（図２（ｇ）の工程
参照）、電極トーチ電極８からの放電を適正に行わせる
ことができる。
【００１８】次に、上記したワイヤボンディングを適切
に行うために検討した内容について説明する。検討項目
としては、ウェッジボンディングを行う場合のバンプ６
の中心とキャピラリ７の中心との間の距離ＰＴ（図４
（ａ）参照）、２次ボンディングを行う場合のバンプ６
の中心とキャピラリ７の中心との間の距離ＬＴ（図４
（ｂ）参照）、Ａｕワイヤ５のルーピング方向に対する
ウェッジボンディング方向の角度θ（図４（ｃ）参
照）、Ａｕワイヤ５のルーピング方向に対する超音波
（ＵＳ）印加方向（図４（ｄ）参照）とした。なお、図
４（ｃ）、（ｄ）は、回路基板１を上方から見た場合の
説明図である。また、図４（ｄ）において、超音波印加
方向がルーピング方向と直交する場合をＵＳ直交、ルー
ピング方向と平行な場合をＵＳ平行としている。
【００１９】図５に、ＵＳ直交とＵＳ平行の場合、およ
び角度θを０°、４５°とした場合の４つの組み合わせ
について、ＰＴ、ＬＴ（単位はμｍ）を変化させ、テー
ルの発生回数およびワイヤボンディング装置の停止回数
について実験を行った結果を示す。なお、それぞれのサ
ンプル数を４０とし、表中の点線で示す上段にテールの
発生回数、下段にワイヤボンディング装置の停止回数を
示す。なお、２次ボンディングでＡｕワイヤを切断した
とき、その切断位置が屈曲部６ａの上端より上にあるか
否かを目視で確認し、切断位置が屈曲部６ａの上端より
上にあるときにテールの発生としている。
【００２０】表中の斜線で示す部分においては、テール
の発生若しくはワイヤボンディング装置の停止が生じて
いる。従って、図５（ａ）、（ｂ）に示す結果から分か
るように、ＰＴを１２５μｍ以上１７５μｍ以下、ＬＴ
を０μｍ以上２０μｍ以下とすることにより、テールの
発生、ワイヤボンディング装置の停止がなくなることが
確認できた。
【００２１】また、ルーピング方向に対するウェッジボ
ンディング方向の角度θを４５°に大きくしても、図５
（ｃ）、（ｄ）に示すように、ＰＴ、ＬＴを上記した数
値にすれば、テールの発生、ワイヤボンディング装置の
停止をなくすことができる。なお、マイナス方向の角度
も同様の結果となるので、角度θが±４５°以下であれ
ば、同様の結果を得ることができる。
【００２２】図６に、バンプ６上にＡｕワイヤ５を２次
ボンディングしたものについて、片側引張強度試験（図
の右側に示すようにＡｕワイヤ５を６０°方向に引っ張
った場合の強度試験）を行った場合の結果を示す。ＵＳ
平行、ＵＳ直交のいずれの場合も十分な強度（１０ｇ以
上であれば十分な強度と考えられる）を得ていることが
分かる。
【００２３】上述した実施形態においては、バンプ６を
形成した後すぐにループボンディングを行うものを示し
たが、所定の数だけバンプ６を先に形成しておき、その
後、全てのループボンディングを行うようにしてもよ
い。また、ワイヤボンディングは、半導体チップ３と配
線４の間のみならず、半導体チップと半導体チップ、配
線と配線間で行うものであってもよい。
【００２４】なお、ワイヤ、配線の材料等については上
記した以外のものであってもよく、またボールボンディ
ングを行う場合のワイヤとループボンディングを行う場
合のワイヤを別材料としてもよい。
【図面の簡単な説明】
【図１】本発明の一実施形態に係るワイヤボンディング
方法を用いて半導体チップと配線間がワイヤボンディン
グされた状態を示す断面図である。
【図２】本発明の一実施形態に係るワイヤボンディング
工程を示す工程図である。
【図３】バンプ６上に２次ボンディングを行う場合の説
明図である。
【図４】ワイヤボンディング条件を設定するための検討
項目を説明する図である。
【図５】テールの発生回数およびワイヤボンディング装
置の停止回数についての実験結果を示す図表である。
【図６】片側引張強度試験の結果を示す図である。
【図７】従来の問題を説明するための図である。
【符号の説明】
１…回路基板、２…ダイマウントペースト、３…半導体
チップ、３ａ…ボンディングパッド、４…配線、５…Ａ
ｕワイヤ、５ａ…ボール、６…バンプ、６ａ…屈曲部、
７…キャピラリ、７ａ…貫通孔、８…トーチ電極。
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平８−340019（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/60

Claims (6)

    (57)【特許請求の範囲】
  1. 【請求項１】 第１導体（３ａ）と第２導体（４）を有
    する回路基板（１）に対し、前記第１導体（３ａ）上に
    １次ボンディングを行った後、前記第２導体（４）上に
    ２次ボンディングを行い、前記第１導体（３ａ）と前記
    第２導体（４）間をワイヤボンディングする方法におい
    て、前記回路基板（１）上に半導体チップ（３）がダイマウ
    ントされている状態で、 前記第２導体（４）上にボール
    ボンディングを行ってバンプ（６）を形成し、そのウェ
    ッジボンディングを前記バンプ（６）に対し前記第１導
    体（３ａ）と反対側の位置にて行い、 前記１次ボンディングを行った後、前記バンプ（６）に
    対し前記第１導体（３ａ）側からワイヤ（５）をルーピ
    ングして前記バンプ（６）上に前記２次ボンディングを
    行うことを特徴とするワイヤボンディング方法。
  2. 【請求項２】 第１導体（３ａ）上に１次ボンディング
    を行った後、第２導体（４）上に２次ボンディングを行
    い、前記第１導体（３ａ）と前記第２導体（４）間をワ
    イヤボンディングする方法において、 前記第２導体（４）上にボールボンディングを行ってバ
    ンプ（６）を形成し、そのウェッジボンディングを前記
    バンプ（６）に対し前記第１導体（３ａ）と反対側の位
    置にて行い、 前記１次ボンディングを行った後、前記バンプ（６）に
    対し前記第１導体（３ａ）側からワイヤ（５）をルーピ
    ングして前記バンプ（６）上に前記２次ボンディングを
    行う方法であって、 前記バンプ（６）の中心位置から１２５μｍ以上１７５
    μｍ以下の距離にて前記ウェッジボンディングを行い、
    前記バンプ（６）の中心位置から前記第１導体（３ａ）
    と反対側の方向に０μｍ以上２０μｍ以下の距離にて前
    記２次ボンディングを行うことを特徴とするワイヤボン
    ディング方法。
  3. 【請求項３】 前記ルーピングの方向に対する前記ウェ
    ッジボンディングの方向の角度を±４５°の範囲内とし
    たことを特徴とする請求項２に記載のワイヤボンディン
    グ方法。
  4. 【請求項４】 第１導体（３ａ）と第２導体（４）を有
    する回路基板（１） に対し、貫通孔（７ａ）にワイヤ
    （５）が挿通されたキャピラリ（７）を用いて、前記第
    １導体（３ａ）上に１次ボンディングを行った後、前記
    第２導体（４）上に２次ボンディングを行い、前記第１
    導体（３ａ）と前記第２導体（４）間をワイヤボンディ
    ングする方法において、前記回路基板（１）上に半導体チップ（３）がダイマウ
    ントされている状態で、 前記キャピラリ（７）を前記第
    ２導体（４）上に位置させてボールボンディングを行
    い、前記第２導体（４）上にバンプ（６）を形成した
    後、前記キャピラリ（７）を移動させ前記第２導体
    （４）上に押しつけて前記バンプ（６）から延びるワイ
    ヤ（５）を切断し、 前記１次ボンディングを行った後、前記キャピラリ
    （７）を前記バンプ（６）上に位置させ前記キャピラリ
    （７）内から延びるワイヤ（５）を前記キャピラリ
    （７）の先端付近で前記バンプ（６）から延びるワイヤ
    （５）と接合し、その接合部で前記キャピラリ（７）内
    のワイヤ（５）を切断して、前記２次ボンディングを行
    うことを特徴とするワイヤボンディング方法。
  5. 【請求項５】 前記バンプ（６）から延びるワイヤ
    （５）は屈曲しており、その屈曲部（６ａ）を前記貫通
    孔（７ａ）内に位置させ、前記貫通孔（７ａ）の内壁に
    より前記屈曲部（６ａ）を前記貫通孔（７ａ）内のワイ
    ヤ（５）に押しつけて前記接合を行うことを特徴とする
    請求項４に記載のワイヤボンディング方法。
  6. 【請求項６】 前記第１導体（３ａ）は、前記半導体チ
    ップ（３）のボンディングパッドであることを特徴とす
    る請求項１、４、５のいずれか１つに記載のワイヤボン
    ディング方法。
JP26637296A 1996-10-07 1996-10-07 ワイヤボンディング方法 Expired - Fee Related JP3344235B2 (ja)

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US08/944,822 US6079610A (en) 1996-10-07 1997-10-06 Wire bonding method
DE1997144266 DE19744266B4 (de) 1996-10-07 1997-10-07 Drahtbondierungsverfahren

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DE19744266A1 (de) 1998-04-16

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