JPH05326601A - ワイヤボンディング方法 - Google Patents

ワイヤボンディング方法

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Publication number
JPH05326601A
JPH05326601A JP4151491A JP15149192A JPH05326601A JP H05326601 A JPH05326601 A JP H05326601A JP 4151491 A JP4151491 A JP 4151491A JP 15149192 A JP15149192 A JP 15149192A JP H05326601 A JPH05326601 A JP H05326601A
Authority
JP
Japan
Prior art keywords
bonding
wire
bare chip
electrode
bonding method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4151491A
Other languages
English (en)
Inventor
Masanobu Hayashi
正信 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP4151491A priority Critical patent/JPH05326601A/ja
Publication of JPH05326601A publication Critical patent/JPH05326601A/ja
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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    • H01L24/02Bonding areas ; Manufacturing methods related thereto
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    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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Abstract

(57)【要約】 【目的】ベアチップの信頼性を低下させることのないワ
イヤボンディング方法を提供する。 【構成】回路基板5上にベアチップ6を搭載し、そのベ
アチップ6面上の電極パッド7にワイヤボンディングす
るためのワイヤボンデング方法であって、あらかじめベ
アチップ6面上の電極パッド7上にバンプ9を形成して
おき、そのバンプ9上にウェッジボンディングをするこ
とを特徴とする。

Description

【発明の詳細な説明】
【0001】
【産業上の利用分野】本発明は、混成集積回路装置等の
電子部品におけるワイヤボンディング方法に関する。
【0002】
【従来の技術】従来のワイヤボンディングは、例えば、
以下に述べる方法で行われていた。まず、図10(a)
に示すように、キャピラリ21の孔内に挿通されたワイ
ヤ22とトーチ電極23との間に高電圧をかけて、ワイ
ヤ22の先端にボール24を形成する。次いで、図1
(b)に示すようにトーチ電極23を退けて、キャピラ
リ21を下方へ移動させることにより、回路基板25面
上に形成されたリード電極27に、ボール24を接触さ
せてボンディングする。このようなボンディング方法を
ボールボンディングと呼んでいる。次いで、回路基板2
5面上に搭載された半導体IC等のベアチップ26面上
のパッド電極28に、ボンディングワイヤ22の途中の
部分を押付けることによりウェッジ状ボンドを形成させ
てボンディングする。このようなボンディング方法をウ
ェッジボンディングと呼んでいる。次いで、キャピラリ
21内のワイヤ22をキャピラリー21の動作と連動す
るようにした状態でキャピラリー21を引き上げてワイ
ヤ22を切断する。これにより、図11に示すような電
子部品29が得られる。この図において、(a)は電子
部品29の側面図、(b)はその平面図である。
【0003】このように、上記のように、ファーストボ
ンディングにボールボンディングが、セカンドボンディ
ングにウェッジボンディングが、一般的に用いられてい
る。このようにファーストボンディングにボールボンデ
ィングが用いられるのは、ファーストボンディング後の
ワイヤの引き回し方向を自由に選定できるようにするた
めである。つまり、仮に、ファーストボンディングにウ
ェッジボンディングを用いた場合は、その後のワイヤは
一方向にしか引き回しができず、他の方向へ引き回した
場合はウェッジボンディング付近のワイヤに無理な力を
加えることになるためである。
【0004】
【発明が解決しようとする課題】しかしながら、上記の
方法では、ベアチップ26面上にウェッジボンディング
することになるため、キャピラリ21のボンディング面
がベアチップ26面に直接当たり、ベアチップ26にク
ラック等を生じさせることになる。また、キャピラリ2
1のボンディング面の直径は、一般には、パッド電極2
8の径よりも大きいため、キャピラリ21のボンデング
面はパッド電極28からはみ出す。その結果、キャピラ
リ21がパッド電極28に近接する電極ライン(図示せ
ず。)を切断することになる。このように、上記の方法
では、ベアチップ26の信頼性を低下させるという不都
合があった。
【0005】本発明は、上記問題点に鑑みてなされたも
のであって、ベアチップの信頼性を低下させることのな
いワイヤボンディング方法を提供することを目的にして
いる。
【0006】
【課題を解決するための手段】本発明のワイヤボンディ
ング方法は、上記目的を達成するために、あらかじめベ
アチップ面上の電極パッド上にバンプを形成しておき、
そのバンプ上にウェッジボンディングをすることを特徴
とする。
【0007】
【作用】上記のように、あらかじめベアチップ面上の電
極パッド上にバンプを形成しているため、このバンプ上
にウェッジボンディングをしたとしても、このバンプの
厚みによって、キャピラリのボンディング面がベアチッ
プ面に直接当たることがない。そのため、ベアチップに
クラック等が入ったり、電極パッドに近接する電極ライ
ンを切断することがない。したがって、ベアチップの信
頼性が低下することがない。
【0008】
【実施例】以下、本発明の一実施例のワイヤボンディン
グ方法を図面を参照しつつ詳述する。まず、図1に示す
ように、キャピラリ1の孔内に挿通されたワイヤ2とト
ーチ電極3との間に高電圧をかけて、金製のワイヤ2の
先端にボール4を形成する。次いで、図2に示すよう
に、トーチ電極3を退けて、キャピラリ1を下方へ移動
させることにより、回路基板5面上に搭載された半導体
IC等のベアチップ6面上のパッド電極7に、ボール4
を接触させてボンディングする。次いで、図3に示すよ
うに、クランパー8を閉じてワイヤ2を固定させた状態
でキャピラリ1を引き上げる。これによって、パッド電
極7上にバンプ(突起物)9を形成する。次いで、図1
に示すような方法でワイヤ2の先端にボール4を形成し
た状態で、図4に示すような回路基板5面上に形成され
たリード電極10にボールボンディングを行う。次い
で、図5に示すようにバンプ9上にウェッジボンディン
グを行う。このようにして、図6に示すような電子部品
11が製造される。なお、この電子部品11は、ベアチ
ップ6面上のすべてのパッド電極7上にバンプ9を形成
してウェッジボンディングを行ったものである。
【0009】図7は、本発明の他の実施例によって製造
された電子部品の平面図である。この図に示すように、
パッド電極7上にバンプ9を形成してウェッジボンディ
ングを施したものと併用して、パッド電極7にボールボ
ンディングを施したものを用いることも可能である。こ
の図において、12aはバンプ9上に施したウエッジボ
ンディング部分、12bはリード電極10上に施したウ
ェッジボンディング部分、13aはパッド電極7上に施
したボールボンディング部分、13bはリード電極10
上に施したボールボンディング部分である。このよう
に、パッド電極7にウェッジボンディング、ボールボン
ディングをそれぞれ採用することにより、ワイヤ2を立
体的に交差等すれば配線の自由度を増やすことができ
る。
【0010】図8および図9は本発明の他の実施例によ
って製造された電子部品の側面図である。これらの図に
おいて、図8はベアチップ6内のパッド電極7同士をワ
イヤボンディングしたもので、図9は2つのべアチップ
6同士のパット電極7をワイヤボンディングしたもので
ある。これらの図において、12aはバンプ9上に施し
たウェッジボンディング部分、13aはパッド電極7上
に施したボールボンディング部分である。これらの図に
示す電子部品のワイヤボンディング方法に関しては、図
6に示す電子部品11と同様に、あらかじめバンプ9を
形成し、ボールボンディングを行った後に、バンプ9上
にウェッジボンディングを行う。これらの図に示すよう
に、ベアチップ6上のパッド電極7同士をワイヤボンデ
ィングしているため、配線の自由度を増すことができ
る。
【0011】なお、本発明に係る実施例において、バン
プ9の形成方法は上記のものに限らず、他の方法であっ
てもよい。また、ワイヤ2の材質は金に限らず、銅、ア
ルミ等の他の材質であってもよい。
【0012】
【発明の効果】本発明のワイヤボンディング方法は、あ
らかじめベアチップ面上の電極パッド上にバンプを形成
しておき、そのバンプ上にウェッジボンディングをする
ため、ベアチップにクラック等が入ったり、電極パッド
に近接する電極ラインを切断することがなく、ベアチッ
プの信頼性が低下することがない等の効果を奏するもの
である。
【図面の簡単な説明】
【図1】本発明の一実施例のワイヤボンディング方法を
説明するための図である。
【図2】本発明の一実施例のワイヤボンディング方法を
説明するための図である。
【図3】本発明の一実施例のワイヤボンディング方法を
説明するための図である。
【図4】本発明の一実施例のワイヤボンディング方法を
説明するための図である。
【図5】本発明の一実施例のワイヤボンディング方法を
説明するための図である。
【図6】本発明の一実施例のワイヤボンディング方法に
よって製造された電子部品の側面図である。
【図7】本発明の他の実施例のワイヤボンディング方法
によって製造された電子部品の平面図である。
【図8】本発明の他の実施例のワイヤボンディング方法
によって製造された電子部品の側面図である。
【図9】本発明の他の実施例のワイヤボンディング方法
によって製造された電子部品の側面図である。
【図10】従来のワイヤボンディング方法を説明するた
めの図である。
【図11】従来のワイヤボンディング方法によって製造
された電子部品を示す図である。
【符号の説明】
1 キャピラリ 2 ワイヤ 3 トーチ電極 4 ボ−ル 5 回路基板 6 ベアチップ 7 パッド電極 8 クランパー 9 バンプ 10 リード電極 11 電子部品 12a ウェッジボンディング部分 12b ウェッジボンディング部分 13a ボールボンディング部分 13b ボールボンディング部分

Claims (1)

    【特許請求の範囲】
  1. 【請求項1】回路基板上にベアチップを搭載し、そのベ
    アチップ面上の電極パッドにワイヤボンディングするた
    めのワイヤボンディング方法であって、 あらかじめベアチップ面上の電極パッド上にバンプを形
    成しておき、そのバンプ上にウェッジボンディングをす
    ることを特徴とするワイヤボンディング方法。
JP4151491A 1992-05-18 1992-05-18 ワイヤボンディング方法 Pending JPH05326601A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4151491A JPH05326601A (ja) 1992-05-18 1992-05-18 ワイヤボンディング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4151491A JPH05326601A (ja) 1992-05-18 1992-05-18 ワイヤボンディング方法

Publications (1)

Publication Number Publication Date
JPH05326601A true JPH05326601A (ja) 1993-12-10

Family

ID=15519661

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4151491A Pending JPH05326601A (ja) 1992-05-18 1992-05-18 ワイヤボンディング方法

Country Status (1)

Country Link
JP (1) JPH05326601A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998032167A1 (fr) * 1997-01-17 1998-07-23 The Furukawa Electric Co., Ltd. Procede de formation d'une electrode saillante et procede de soudage des connexions d'un element a semi-conducteur
EP1374298A1 (en) * 2001-03-23 2004-01-02 Koninklijke Philips Electronics N.V. Chip module with bond-wire connections with small loop height
US6946380B2 (en) 2002-02-19 2005-09-20 Seiko Epson Corporation Method for forming bump, semiconductor element having bumps and method of manufacturing the same, semiconductor device and method of manufacturing the same, circuit board, and electronic equipment
JP2014120702A (ja) * 2012-12-19 2014-06-30 Azbil Corp ワイヤボンディング方法
JP2014225643A (ja) * 2013-04-16 2014-12-04 ローム株式会社 半導体装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998032167A1 (fr) * 1997-01-17 1998-07-23 The Furukawa Electric Co., Ltd. Procede de formation d'une electrode saillante et procede de soudage des connexions d'un element a semi-conducteur
EP1374298A1 (en) * 2001-03-23 2004-01-02 Koninklijke Philips Electronics N.V. Chip module with bond-wire connections with small loop height
US6946380B2 (en) 2002-02-19 2005-09-20 Seiko Epson Corporation Method for forming bump, semiconductor element having bumps and method of manufacturing the same, semiconductor device and method of manufacturing the same, circuit board, and electronic equipment
US7176570B2 (en) 2002-02-19 2007-02-13 Seiko Epson Corporation Method for forming bump, semiconductor element having bumps and method of manufacturing the same, semiconductor device and method of manufacturing the same, circuit board, and electronic equipment
JP2014120702A (ja) * 2012-12-19 2014-06-30 Azbil Corp ワイヤボンディング方法
JP2014225643A (ja) * 2013-04-16 2014-12-04 ローム株式会社 半導体装置
US9859182B2 (en) 2013-04-16 2018-01-02 Rohm Co., Ltd. Semiconductor device
US10312171B2 (en) 2013-04-16 2019-06-04 Rohm Co., Ltd. Semiconductor device

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