JPH02114545A - ワイヤボンディング接続方法 - Google Patents

ワイヤボンディング接続方法

Info

Publication number
JPH02114545A
JPH02114545A JP63267509A JP26750988A JPH02114545A JP H02114545 A JPH02114545 A JP H02114545A JP 63267509 A JP63267509 A JP 63267509A JP 26750988 A JP26750988 A JP 26750988A JP H02114545 A JPH02114545 A JP H02114545A
Authority
JP
Japan
Prior art keywords
pellet
bonding
wire
ball
bond
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63267509A
Other languages
English (en)
Inventor
Toshihiro Kato
加藤　俊博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP63267509A priority Critical patent/JPH02114545A/ja
Publication of JPH02114545A publication Critical patent/JPH02114545A/ja
Pending legal-status Critical Current

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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 ［発明の目的］］ 〈産業上の利用分野） 本発明は、半導体装置のペレット−ペレットボンディン
グ（ｐｅｌｌｅｔ　ｔｏ　ｐｅｌｌｅｔ　ｂｏｎｄｉｎ
ｑ　）における、信頼性を損なわない接続方法に関する
ものである。
（従来の技術） 従来、ペレットからペレットへのワイヤボンディングに
は、通常、ボール・ウェッジ・ボンディング（単にポー
ルボンディングとも呼ばれる）が使用されているが、こ
の場合のボンディングを第３図に示す。
第３図において、１つの半導体装置内に第一ペレット１
及び第二ペレット２がリードフレームのそれぞれの電極
板３１．３２上に半田材３１ａ３２ａにより接合されて
いる。　それぞれのペレット１，２上面にはＡｌｔｉパ
ッドが形成されており、それらを接続する金属細線４に
は、Ａｕ線、Ａｉ線、Ｃｕ線などが用いられるが、−ａ
的にはＡｕ線が多く用いられている。　第１ボンドであ
る第一ペレット１の電極パッドでは、トーチで溶融して
金属細線４の一端に形成された金属ボール４ａが押し付
けられること（ポールボンディング）によって接合し、
第２ボンドである第二ペレット２の″ｔｈ極パッドでは
、金属細線４の他＠４ｂが超音波振動と押し付は荷重を
利用すること（ウエツジボンディング）によって接合が
行われる。　第２ボンド側のウェッジボンディング終了
後、ボンダ（図示せず）のツールが金属細線他端４ｂを
抑えた状態でボンダのワイヤクランプが金属細線４を引
張り切断（グルカット）して、次の接続をするボンディ
ングの準備が始まる。
上記従来のペレット−ペレットボンディングにおいては
、下記のような問題点があるが、それを第３図における
第２ボンド側の破線円■部分を拡大した断面図である第
４図を参照して説明する。
第４図において、２は第二ペレット、５ａは酸化膜であ
って、酸化膜５ａ上にはＡ１電極パッド６か形成されて
おり、電極パッド６を露出してさらに絶縁Ｍ５ｂが被覆
されている。　４ｂは前記金属細線４のｆｌ！！端で、
電極パッド６にウェッジボンディングされている。
（１）従来のペレット−ペレットボンディングにおいて
、Ａｌｌ線を用いたボール・ウェッジ・ボンディングを
行うと、特に高温放置寿命試験（例えば、１５０℃で１
０００〜２０００時間）において、Ａｌｌ線の第２ボン
ド部分にＡｕ−Ａｌ金属間化合物４Ｃ（網掛は部分）の
形成による接続部劣化（Ａｌｌと金属間化合物境界部に
発生するマイクロクラック４ｄによるオープン現象）を
生じる。
〈２）金属細線４としてＡ１線を用いた場合は、Ａ１電
極パッド６との間に形成される金属間化合物による劣化
の問題はないが、封止にプラスチックパッケージが使用
されるとき、Ａ１線では２００μｌ程度以上のワイヤを
用いないと温度サイクルテスト等の環境試験に合格しな
い、　ところが、集積回路では、一般に２５〜５０μｔ
の金ａ細線を用いることが多いため、Ａ１線の適用が困
難である。
（３）従来のペレット−ペレットボンディングでは、第
二ペレット上にウェッジ・ボンディングをすることにな
るが、第２ボンド部分でウェッジボンドのｆ！Ｉ撃によ
り、第二へレッ！へにダメージを与えることがあった。
（発明が解決しようとする課題） 本発明の目的は、ペレット−ペレットボンディングにお
いて、特にウェッジボンディングされる第２ボンド側の
接合問題点を解決し、特に高温放置寿命において十分な
信頼性を有するワイヤボンディング接続方法を提供する
ことである。
［発明の構成］ （課題を解決するための手段と作用） 本発明のワイヤボンディング接続方法は、半導体装置の
ペレットからペレットへ金属細線をボール・ウェッジ・
ボンディングをする場合において、第２ボンド側のペレ
ットにおけるボンディング箇所に、あらかじめ金属ボー
ルを形成させた後に、第１ボンド側のペレットにおける
ボンディング箇所に金属細線一端のボールボンディング
を行い、続いて第２ボンド側の前記金属ボール上に金属
細線他端のウェッジボンディングを行うことを特徴とす
る。
ベレヅトーペレットボンディングにおいて信頼性上問題
となるウェッジボンディング（第２ボンド側）部分にあ
らかじめ金属ボールを形成させておくことにより、第２
ボンド側のＹｓ　’ｆｆｉｆｆ上に対する接合特性は、
該電極パッド上に形成した金属ボールによって第１ボン
ド側と同水準になるとともに、金属細線は同じ金属の金
属ボール上にウェッジボンディングなされるから、全体
として高温放置寿命を改善することになる。
（実施例） 以下、第１図（ａ＞及び（ｂ）を参照して本発明の詳細
な説明する。　両図において、第３図と同じ符号を用い
た部分は、従来例の部分と変りないことを示す。
第１図（ａ）に示すように、第二ペレット２の第２ボン
ドしようとするＡ１電極パッド上にあらかじめ、Ａｕボ
ール７を形成しておく、　　Ａｕボール７の形成は、ポ
ールボンディングと同様に、ボンダにおけるＡｌｌ線の
一端をトーチで溶融してＡＵボールを形成し、これを電
極パッドに押し付けて接合した後、Ａｕ線をプルカット
することにより形成させることができる。　次に、再度
ボンダのＡｕ線に金属ボールを形成し、これを第１図（
ｂ）に示すように、第一ペレット１の第１ボンドに金属
細線８の一端８ａを常法によりポールボンディングを行
い、第二ペレット２の第２ボンドでは、先に形成したＡ
ｌｌボール７にＡｌｌ線の他端８ｂをウェッジボンディ
ングすることにより、接続を行った。
実施例の半導体装置を従来例の半導体装置と対照させて
、高温放置寿命試験を行ったところ、実施例は有意に優
れていることが確認された。　なお、Ａｕ線以外にＣｕ
線を用いても、同様に該寿命試験に潰れたボンディング
を行うことができる。
ペレット−ペレットボンディング以外に、例えばＣＯＢ
　（ｃｈｉｐ　ｏｎ　ｂｏａｒｄ　）などパッケージの
インナリードのボンダビリティが悪い場合にも、あらか
じめそのインナリードにＡｕボールを形成しておくこと
によって、ウェッジボンディングが容易になる。
第２図はガラスエポキシ銅張積層板を用いたＣＯＢに適
用した場合を示す、　同図において、ガラスエポキシ基
板１０上のパターン化されたＣＵ導体１１ａ、ｌｌｂに
は、厚さ０．１μｎのＡｕメツキ層１２ａ、ｔ２ｂが形
成されている。　　導体パターンｌｌａのＡｌｌメツキ
＃１２ａｉにはペレット１がマウントされ、一方、導体
パターン１１ｂは厚さ０．１μｎのＡｔｌメツキ層１２
ｂの形成されたインナリードとなっている。　　そこで
、まず、インナリードのメツキ層１２ｂ上の第２ボンド
箇所にはＡｕボール１７が形成され、しかる後に、金属
細線８の一端８ａを、ペレット１の電極パッドにボール
ボンディングし、その他端８ｂを、Ａｕボール１７上に
ウェッジボンディングする。
従来インナリード上に直接ウェッジボンディングすると
きには、インナリードのメツキ層１２ｂを１μｍ程度に
厚く付けなければならなかったが、あらかじめＡｕボー
ル１７を形成するようにすれば、０．１μｍという薄い
メツキ層でよく、コストダウンが可能となる。
［発明の効果］ （１）従来のようにウェッジボンディング部のＡｕ−Ａ
ｌ金属間化合物生成による信頼性劣化問題を解決できた
。
（２）第２ボンド側ウエツジボンデイング箇所に、あら
かじめボールボンディングを作っておくため、ウェッジ
ボンディング時の機械的衝撃力を緩和できる。
以上により、従来のペレットを用いてペレットペレット
のボンディングの信頼性を向上することができた。
その他、ＣＯＢのガラスエポキシ基板等に適用すれば、
より薄いＡｌｌメツ−１ｉ−厚で良好なボンディング接
続が可能となった。
【図面の簡単な説明】
第１図（ａ）及び（ｂ）は本発明のワイヤボンディング
接続方法を示す正面図、第２図は本発明に関連する参考
例のワイヤボンディング接続方法を示す正面図、第３図
は従来のワイヤボンディング接続方法を示す正面図、第
４図は第３図における破線円ＩＶ部分を拡大して従来方
法の課題を示した断面図である。 １・・・第１ボンド側ペレツト、　２・・・第２ボンド
側ペレツト、　４．８・・・金属細線、４ａ　、８ａ・
・・ボールボンディング端、　４ｂ　、８ｂ・・・ウェ
ッジボンディング端、　６・・・電極パッド、　７．１
７・・・金属ボール、　　ｌｌｂ・・・インナリード、
１２ｂ・・・Ａｕメツキ層。

Claims (1)

    【特許請求の範囲】
  1. １　半導体装置のペレットからペレットへ金属細線をボ
    ール・ウェッジ・ボンディングをする場合において、第
    ２ボンド側のペレットにおけるボンディング箇所に、あ
    らかじめ金属ボールを形成させた後に、第１ボンド側の
    ペレットにおけるボンディング箇所に金属細線−端のボ
    ールボンディングを行い、続いて第２ボンド側の前記金
    属ボール上に金属細線他端のウェッジボンディングを行
    うことを特徴とするワイヤボンディング接続方法。
JP63267509A 1988-10-24 1988-10-24 ワイヤボンディング接続方法 Pending JPH02114545A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63267509A JPH02114545A (ja) 1988-10-24 1988-10-24 ワイヤボンディング接続方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63267509A JPH02114545A (ja) 1988-10-24 1988-10-24 ワイヤボンディング接続方法

Publications (1)

Publication Number Publication Date
JPH02114545A true JPH02114545A (ja) 1990-04-26

Family

ID=17445830

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63267509A Pending JPH02114545A (ja) 1988-10-24 1988-10-24 ワイヤボンディング接続方法

Country Status (1)

Country Link
JP (1) JPH02114545A (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04294552A (ja) * 1991-03-25 1992-10-19 Matsushita Electron Corp ワイヤーボンディング方法
JPH05160192A (ja) * 1991-12-06 1993-06-25 Toshiba Corp 半導体製造装置
US6079610A (en) * 1996-10-07 2000-06-27 Denso Corporation Wire bonding method
EP1065712A1 (en) * 1999-06-28 2001-01-03 Sumitomo Electric Industries, Ltd. Method of wire bonding in semiconductor device
US6601752B2 (en) 2000-03-13 2003-08-05 Denso Corporation Electronic part mounting method
JP2005294874A (ja) * 2005-07-06 2005-10-20 Nippon Steel Corp ワイヤをウェッジ接合した半導体装置及び金合金ボンディングワイヤ

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55118643A (en) * 1979-03-06 1980-09-11 Toshiba Corp Wire bonding process
JPS6041236A (ja) * 1983-08-17 1985-03-04 Nec Corp 電子部品の接続方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55118643A (en) * 1979-03-06 1980-09-11 Toshiba Corp Wire bonding process
JPS6041236A (ja) * 1983-08-17 1985-03-04 Nec Corp 電子部品の接続方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04294552A (ja) * 1991-03-25 1992-10-19 Matsushita Electron Corp ワイヤーボンディング方法
JPH05160192A (ja) * 1991-12-06 1993-06-25 Toshiba Corp 半導体製造装置
US5292050A (en) * 1991-12-06 1994-03-08 Kabushuki Kaisha Toshiba Wire bonder
US6079610A (en) * 1996-10-07 2000-06-27 Denso Corporation Wire bonding method
EP1065712A1 (en) * 1999-06-28 2001-01-03 Sumitomo Electric Industries, Ltd. Method of wire bonding in semiconductor device
US6426563B1 (en) 1999-06-28 2002-07-30 Sumitomo Electric Industries Semiconductor device and method for manufacturing the same
US6784090B2 (en) 1999-06-28 2004-08-31 Sumitomo Electric Industries, Ltd. Semiconductor device and method for manufacturing the same
US6601752B2 (en) 2000-03-13 2003-08-05 Denso Corporation Electronic part mounting method
JP2005294874A (ja) * 2005-07-06 2005-10-20 Nippon Steel Corp ワイヤをウェッジ接合した半導体装置及び金合金ボンディングワイヤ

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