JP2000068316A - 集積回路装置 - Google Patents

集積回路装置

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Publication number
JP2000068316A
JP2000068316A JP23601898A JP23601898A JP2000068316A JP 2000068316 A JP2000068316 A JP 2000068316A JP 23601898 A JP23601898 A JP 23601898A JP 23601898 A JP23601898 A JP 23601898A JP 2000068316 A JP2000068316 A JP 2000068316A
Authority
JP
Japan
Prior art keywords
chip
bonding
integrated circuit
circuit device
bonding method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23601898A
Other languages
English (en)
Inventor
Hirotaka Kobayashi
寛隆 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP23601898A priority Critical patent/JP2000068316A/ja
Publication of JP2000068316A publication Critical patent/JP2000068316A/ja
Pending legal-status Critical Current

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    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
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  • Wire Bonding (AREA)

Abstract

(57)【要約】 【課題】 マルチチップタイプの集積回路装置のパッケ
ージが小型であり、チップのボンディング加工時にダメ
ージを与えるおそれの無い集積回路装置を提供する。 【解決手段】 複数の半導体ベアチップ３，４の接続用
電極相互間および該接続用電極と前記半導体ベアチップ
以外の他の外部端子２とをボンディングワイヤで接続し
てなる集積回路装置において、前記半導体ベアチップの
接続用電極３ｂ，４ｂ相互間のボンディングワイヤ６は
ウェッジボンド法で接続し、前記接続用電極３ａｐ４ａ
と外部端子２との間のボンディングワイヤ５はボールボ
ンド法で接続する。

Description

【発明の詳細な説明】
【０００１】
【発明の属する技術分野】本発明は、集積回路装置に関
し、特に複数の集積回路のベアチップを同一基板上に配
設したマルチチップのモジュール化に好適な集積回路装
置に関する。
【０００２】
【従来の技術】近年、マルチチップのモジュール化が進
展しつつある。このマルチチップのモジュール化につい
て、本発明の実施の形態を示す図である図１，図２を借
用して説明する。
【０００３】図１，図２に示す如く、予めエッチングに
より上面に複数の外部端子（ランド）２が形成されたプ
リント基板１上に、ベアチップ３，４を配設する。外部
端子２はスルーホールにより下面に形成したバンプ（突
出電極）１０に接続する。ベアチップ３，４の接続用電
極３ａ，４ａと外部端子２との間（接続用電極と外部端
子の間）は、それぞれボンディングワイヤ５で接続し、
ベアチップ３の接続用電極３ｂおよびベアチップ４の接
続用電極４ｂとの間（接続用電極相互間）は、別のボン
ディングワイヤ６で接続する。
【０００４】一方、ワイヤをボンディングする代表的な
手段として、超音波ボンディング法の一つであるウェッ
ジボンド法と、熱圧着法の一つであるボールボンド法
（ネイルヘッド法）とが知られている。
【０００５】ここで、図５，図６に基づいてウェッジボ
ンド法とボールボンド法を説明する。なお、「電子情報
通信ハンドブック・第１版、電子情報通信学会、昭和６
３年３月」を参考にした。
【０００６】先ず、図５に従ってウェッジボンド法のプ
ロセスを説明する。 Ａｌ（アルミニウム）線１０１をボンディング用ウ
ェッジ１０２の先端に供給しておく。 ウェッジ１０２を下降させ、チップ１１０のＡｌパ
ッド（接続用電極）にＡｌ線を押しつける。ウェッジ１
０２には超音波発振ホーン（図示せず）から振動が伝え
られ、その振動で「第１ボンド」が行われる。このとき
振動と加圧の強さを適当に選ばないと、Ａｌ線が切断し
たり接合不良が起こる。 クランプ１０３は開いてウェッジ１０２が上昇し、
プリント基板１１１側のパッド（接続用電極）１１２の
真上の位置に移動する。実際にはステージが動いて位置
が決まる。 再びウェッジ１０２が下降してＡｌ線をパッド１１
２に押しつけて超音波振動によって「第２ボンド」が終
わる。 クランプ１０３を閉じてＡｌ線を引きちぎるように
力を加えて切断する。ウェッジ１０２が上昇しての状
態に戻る。
【０００７】次に、図６に従ってボールボンド法のプロ
セスを説明する。 キャピラリ１２１の先端部に金線１２２を引き出
し、金線１２２の先端部を放電により溶融して金球１２
２ａを作る。 ワイヤクランプ１２３を開き、キャピラリ１２１を
下降し、チップ１１０ａのＡｌパッド（接続用電極）上
に金球１２２ａを圧着する。この際、「第１ボンド」と
呼ばれる熱圧着がなされる。 圧着後、キャピラリ１２１は上昇し、一旦停止す
る。その際、プリント基板１１１とチップ１１０ａ，１
１０ｂを載せているステージを移動させて、チップ１１
０ｂの所定のＡｕパッド（接続用電極）部分の上にキャ
ピラリ１２１がくるようにする。 キャピラリ１２１を下降させてチップ１１０ｂのＡ
ｕパッドに金線１２２を圧着し、「第２ボンド」を行
う。 次にクランプ１２３を閉じてキャピラリ１２１を上
昇させ、ワイヤ１２２を切断し、の状態に戻す。
【０００８】
【発明が解決しょうとする課題】しかしながら、前記ウ
ェッジボンド法とボールボンド法にはそれぞれ次の不都
合がある。即ち、ウェッジボンド法を行った場合は（図
５参照）、チップ１１０と該チップに直近の外部端子
（例えば、バンプに通じるランド）を接合しようとする
と、ワイヤ１０１とチップ１１０のエッジが接触する可
能性があるため、「第２ボンド」（図５の）を行う地
点をチップ１１０から離して設定する必要がある。この
場合はパッケージサイズが大きくなってしまうという不
都合ある。
【０００９】また、ボールボンド法では（図６参照）、
チップ１１０ａと別のチップ１１０ｂを接合しようとし
た場合に、第２ボンド側（図６の）で別のチップ１１
０ｂの接続用電極の下面側にダメージを与え、別のチッ
プ１１０ｂの層間膜にクラックが入り、電気的リークが
発生するおそれがある。なお、チップ１１０ａに対する
「第１ボンド」の際には金球１２２ａをボンディングす
るので、緩衝的作用をなし、チップ１１０ａの層間膜に
はクラックが入ることはない。
【００１０】そこで本発明の課題は、マルチチップタイ
プの集積回路装置のパッケージが小型であり、チップの
ボンディング加工時にダメージを与えるおそれの無い集
積回路装置を提供することである。
【００１１】
【課題を解決するための手段】前記課題を解決するため
に本発明は、複数の半導体ベアチップの接続用電極相互
間および該接続用電極と該接続用電極以外の外部端子と
をボンディングワイヤで接続してなる集積回路装置にお
いて、前記半導体ベアチップの接続用電極相互間のボン
ディングワイヤはウェッジボンド法で接続し、前記接続
用電極と外部端子との間のボンディングワイヤはボール
ボンド法で接続してなることを特徴とする。
【００１２】このようにすれば、高さが殆ど同一で段差
の無い半導体ベアチップの接続用電極相互間は、ウェッ
ジボンド法で接続することができるので、半導体ベアチ
ップの層間膜にクラックが入る恐れがない。また、半導
体チップと外部端子との間は一般的なボンディング法で
あるボールボンド法で接続しても、外部端子が接続され
た部材（例えばプリント基板）を傷めることがない。従
って、マルチチップタイプの集積回路装置のパッケージ
を小型化でき、ボンディング加工時に半導体ベアチップ
にダメージを与えることがない。
【００１３】
【発明の実施の形態】以下、本発明を図示の実施の形態
に基づいて説明する。図１は本実施の形態の平面図であ
り、図２はその断面図である。図１，図２のそれぞれの
構成部材の説明は、前記「従来の技術」の欄において説
明済であるで、重複説明を省略する。なお、図１に示し
た場合は、チップ３，４の接続用電極が各チップの周辺
部に配置されている場合である。
【００１４】次に作用を説明する。 先ず、プリント基板１にチップ３，４をダイボンド
した後、チップ３，４上のそれぞれの接続用電極３ａ，
３ｂ，４ａ，４ｂに対してウェッジボンド法（図５参
照）を実行してワイヤ５の一端をボンディングし、ワイ
ヤ６の両端をボンディングする。この場合は、ウェッジ
ボンド法なのでチップにクラックが入ることはなく、チ
ップを傷めることもない。次いで、前記ワイヤ５のボン
ディングしていない他端をボールボンド法（図６参照）
で外部端子２にボンディングする。この場合は、金球を
備えた一端をボンディングする「第１ボンド」であって
も、金球の無い他端をボンディングする「第２ボンド」
であっても、ボンディング対象が外部端子（例えばプリ
ント基板のランド）なので、クラックを発生させるおそ
れがない。
【００１５】全ての接続用電極および外部端子のボンド
が終了後、樹脂を用いてプリント基板１、チップ３，
４、ボンディングワイヤ５，６等の全体を封止してマル
チチップタイプの半導体集積回路装置が完成する。 また、前述のの順番とは逆に、先にワイヤ５の一
端を外部端子２にボールボンド法でボンディングし、そ
の後、ワイヤ５の他端およびワイヤ６の両端をチップ
３，４の接続用電極３ａ，３ｂ，４ａ，４ｂにウェッジ
ボンド法でボンディングしてもよい。本実施の形態によ
れば、チップと外部端子との間隔を小さくすることが可
能であり、チップとチップとの間隔を１００μｍレベル
まで近づけることが可能である。
【００１６】＜変形例＞図３，図４に本実施の形態の変
形例を示す。前記実施の形態ではチップの「周辺部」に
接続用電極が配置してあったのに対し、本変形例ではチ
ップの「内部」にも接続用電極が配置してある場合であ
る。このような接続用電極が「内部」に配置されている
場合でも、本発明を適用できるのは勿論である。
【００１７】なお、前記実施の形態および変形例では、
外部端子（ランド）がチップ搭載のプリント基板と同一
基板内に設けられている場合を説明したが、例えば外部
端子が同一プリント基板に搭載されていない場合や、マ
ルチチップパッケージに隣接する電気部品等に接続する
ための外部端子であっても、本発明を適用できるのは勿
論である。
【００１８】
【発明の効果】以上説明したように本発明によれば、高
さが殆ど同一で段差の無い半導体ベアチップの接続用電
極相互間は、ウェッジボンド法で接続することができる
ので、半導体ベアチップの層間膜にクラックが入る恐れ
がない。また、半導体チップと外部端子との間は一般的
なボールボンド法で接続しても、外部端子が接続された
部材（例えばプリント基板）を傷めることがない。従っ
て、半導体集積回路装置のパッケージを小型化でき、ボ
ンディング加工時に半導体ベアチップにダメージを与え
ることがない。
【図面の簡単な説明】
【図１】本発明の実施の形態の平面図である。
【図２】本発明の実施の形態の断面図である。
【図３】本実施の形態の変形例の平面図である。
【図４】本発明の実施の形態の断面図である。
【図５】従来のウェッジボンド法を説明する図である。
【図６】従来のボールボンド法を説明する図である。
【符号の説明】
１…プリント基板、２…外部端子、３…チップ、３ａ，
３ｂ…チップの周辺部の接続用電極、４…チップ、４
ａ，４ｂ…チップの周辺部の接続用電極、４ｃ，４ｄ…
チップの内部の接続用電極、５，６…ボンディングワイ
ヤ、１０…バンプ

Claims (1)

    【特許請求の範囲】
  1. 【請求項１】 複数の半導体ベアチップの接続用電極相
    互間および該接続用電極と該接続用電極以外の外部端子
    とをボンディングワイヤで接続してなる集積回路装置に
    おいて、 前記半導体ベアチップの接続用電極相互間のボンディン
    グワイヤはウェッジボンド法で接続し、前記接続用電極
    と外部端子との間のボンディングワイヤはボールボンド
    法で接続してなることを特徴とする集積回路装置。
JP23601898A 1998-08-21 1998-08-21 集積回路装置 Pending JP2000068316A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23601898A JP2000068316A (ja) 1998-08-21 1998-08-21 集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23601898A JP2000068316A (ja) 1998-08-21 1998-08-21 集積回路装置

Publications (1)

Publication Number Publication Date
JP2000068316A true JP2000068316A (ja) 2000-03-03

Family

ID=16994560

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23601898A Pending JP2000068316A (ja) 1998-08-21 1998-08-21 集積回路装置

Country Status (1)

Country Link
JP (1) JP2000068316A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100491234B1 (ko) * 2001-12-03 2005-05-25 미쓰비시덴키 가부시키가이샤 반도체 집적 회로 장치
US7256485B2 (en) 2005-03-18 2007-08-14 Nec Electronics Corporation Semiconductor device having bonding pad of the first chip thicker than bonding pad of the second chip

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100491234B1 (ko) * 2001-12-03 2005-05-25 미쓰비시덴키 가부시키가이샤 반도체 집적 회로 장치
US7256485B2 (en) 2005-03-18 2007-08-14 Nec Electronics Corporation Semiconductor device having bonding pad of the first chip thicker than bonding pad of the second chip
US7331737B2 (en) 2005-03-18 2008-02-19 Nec Electronics Corporation Method of forming a semiconductor device having bonding pad of the second chip thinner than bonding pad of the first chip

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