JPH03208355A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number
JPH03208355A
JPH03208355A JP2001467A JP146790A JPH03208355A JP H03208355 A JPH03208355 A JP H03208355A JP 2001467 A JP2001467 A JP 2001467A JP 146790 A JP146790 A JP 146790A JP H03208355 A JPH03208355 A JP H03208355A
Authority
JP
Japan
Prior art keywords
ball
pad
electrode pad
semiconductor element
die
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001467A
Other languages
English (en)
Inventor
Kiyoaki Tsumura
清昭 津村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2001467A priority Critical patent/JPH03208355A/ja
Priority to US07/505,482 priority patent/US5023697A/en
Priority to GB9010385A priority patent/GB2239829B/en
Priority to DE4021031A priority patent/DE4021031C2/de
Priority to KR1019900018073A priority patent/KR940003563B1/ko
Publication of JPH03208355A publication Critical patent/JPH03208355A/ja
Priority to GB9323785A priority patent/GB2271073B/en
Priority to SG155894A priority patent/SG155894G/en
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 ［産業上の利用分野］ この発明は、ワイヤ材に銅極細線（Ｃｕワイヤ）を使用
し、半導体素子をダイスパッドに固定するダイボンド材
の物性を改善した半導体装置、及び、銅（Ｃｕ）ボール
がアルミニウム（ＡＩ）電極パッドに接触するまでを所
定の時間で行い、さらに圧着後のＣｕボールを所定の高
さとする半導体装置の製造方法に関するものである。
［従来の技術］ 第１０図は、従来の半導体装置を示す断面図であり、図
において、半導体素子（１）は、表面に銀メツキ（２）
が施されたリードフレームのダイスパッド（３）上に、
ダイボンド材としてエポキシ樹脂（４）により固定され
ている。半導体素子（１）の表面には、Ａ１電極パッド
（５）が設けられており、このＡＩ電極バッド（５）以
外の部分は、後の工程で封止される樹脂からの不純物に
よってＡＩ配線が腐食するのを防止するため、Ｓ　ｉ　
Ｏ２のガラスコート（６）で覆われている。ＡＩ電極パ
ッド（５）とインナーリード て配線（ソイへ゛ボンド）さｔ１電気的に接続さｈ−こ
いる５、なお、このインナーリード（７）の表面にも銀
メツキ（９）が施されており、ダイスバッド（３）及び
インｌ゛−リ・−ド（ｌ）は、共に銅合金ヌは鉄ごツク
゛ル合金を材料と１ζ製造されている。
第１１図は従来の他の才導体装置を示ず断ｌｆｉ図であ
り、ダイボントロと１１．”ζＡｕ−８ｉ（金　シリ’
７　ン）　’４’１ｌＨ１０）用イｒｃ　Ｌ４　夕）、
　にｉ、第１０　図４．−．．．．．　示１．．。
た゛Ｖ導体装置ど同様Ｃある。
従来の半導体装置はＬ述１、ｌ、：よ）に構成され、・
般１．：、ダイボンドＨの選択は、ダイボンド時の加熱
温度Ｇ、“よる才導体素子の劣化と、ワイヤボン）で時
の接合不良の原因どなることを主に考慮１−なけノ・１
ばならない。
まず５ダイボンド材とＬ７て〕エポキシ樹脂（４）を使
用１７だ場合、エポキシ樹脂（４）を硬化するｊ′：め
に１．５０　’Ｃ・−２５Ｏｒ；の温度を加ノるが、こ
の温度は低温であるため半導体素子（１）は殆ど劣化Ｉ
２ない。し、かＩ２４ワイヤボンド時に問題が生じる。
第１２Ａ図及び第１コシＩｉ３　ｉ図）、支、。７゛ボ
〜３．ｙ樹脂（／１）でダイボンドした半導体Ｓ　−’
１’−（１）のＡ１電極パッド（５）に（−゛ｌボール
をボンディング後、硝酸（ＨＮ　（’）　、　）を使っ
てコ：ツヂング１１．た後におけるＡ電極パッド（ｒ）
）のく１＋ぞえし平面図及び側面断１ｈ１図である。、
：れらの図にＪ２ると、Ａ１す１ｔｆｆがＡＩ排斥部（
１１）で過度に生起１１、Ａｌ電極バッド（ａ））のＡ
１膜（１２）の下地層である５ｉＯ７膜く１３）が露出
１．てｌ、まい、例えば札ｉ開平１−１４３３３２号公
報に記載されているようい、高温保存の信頼性が低下紺
る。また、Ａ１排斥の原因となる超音波コ：ネルギーを
低「′すせるとＣ１１−Ａ　Ｉ合金層が十分生成ｔ′Ｓ
れす、同じく高温保存の信頼性が低Ｆ′する。
この原因は、ワイヤボンド温度が２５０”Ｃ・−３００
℃、エボこ！シ樹脂のガラス転移温度′■゛８が］　１
０　”Ｃ・弓５０℃程度であるため、半導体素子（１）
の固定が１−分て′ない−１−に、従来のＡｕボールよ
りも加圧硬化性が大きなＣｕボ・−ルを使用ｑるのにも
拘わらず２．：ハＣΔ１．１ボール以−１７の振動エネ
ルギ・−を印加１．ながらＡｌ電極バッド（５）Ｊ−”
こ゛塑性変形４させるためと推定される。
次（、：、ダイボントロとしてＡｕ−８ｉ半田（１（１
）　）を使用１、た場合、ダイボンド温度はＡ　ｕ　−
””−Ｓ　ｉ￥、田の液相線温度である３７０℃以上と
なり、ガラスコート〈６）にクラックが発生ｊ〜、半導
体素子（１）が劣化する原因どなる。以下、これを説明
する。
第１．３Ａ図は、ダイボンド後の半導体素子（１）及び
ダイスバッド（３）等を示す斜視図であり、第１３１３
図は第１．３Ａ図のＡ−Ａ線に沿った断面図である。１
これらの図において、Ａ１配線（１４）は、すべてガラ
スコー）−（６）で覆われている。ワイヤボンド後の構
造解析により、Ａｕ−８ｉ生田（１０）でダイボンドさ
れたものを８０％〜９０％のリン酸（）１３　Ｐ　Ｏ、
）溶液中に２０分間浸ｔと、第１４図（、こ示すように
Ａ１配線（１，４）がエツチングされてガラス：７−１
・（６）にクラ・ツク（１５）を生に、樹脂封止後の耐
湿性を劣化させることがわかる。このクラック（Ｊ５）
の発生原因は、ガラスコ−１・（６）及び半導体装１’
（１，）の熱膨張係数の差（ガラスコートのＳ　ｉ　Ｏ
２：　０１６５ｘｌＯ−’／”Ｃ１半導体素子のＳ　ｉ
　：　３．５ｘ　１０−／て゛）により、Ａ１配線（１
４）−Ｌのガ、ノス゛１−１・（６）の部分に応力が集
中１２、クンツク（１５）　１．、−、’至−）たもの
と推定される。なお、ダイボントロと１−でＡ　ｕ〜Ｓ
ｉ’ＰＩＴＩ（１，０）を使用する理由は、Ｃｕワイヤ
とＡＩ電極の相１？”拡散を促進４′るように、ワイヤ
ボン１ぐ温度をＡｕワイヤを用いノご場合以」−に上昇
させるためである。
［発明が解決しようどする課題１ ト述１−たような半導体装置では４ダイボンドＨにエポ
キシ樹脂を使用しまた場合には、ワイヤボンドの加熱温
度がエポキシ樹脂のガラス転移温度以してあるため半導
体素子の固定が十分でないトに、Ａｕボールよりも加圧
硬化性が大きなＣｕボールにＡｕボール以上の超音波振
動エネルギーを印加１＝。
なからＡ１電極パッド上で塑性変形させるため、Ａｌ電
極バッドのＡＩを排斥Ｌ２、下地ＳｉＯ，膜を露出させ
るので、半導体装置の高温保存寿命を低ｔ゛させること
になる。
また、ワイヤボンドの加熱温度をＡｕワイヤを使用した
場合より高く設定する目的でＡｕ−８ｉｆ田を用いた場
合、ダイボンド時の加熱温度で半導体素子のガラスコー
トにクラックが発生し、耐湿性寿命を低下させ、さらに
コストメリットがなくなってしまうという問題点があっ
た。
この発明は、このような問題点を解決するためになされ
たもので、半導体素子をダイスパッド上に強固に固定で
きると共に、ガラスコート−クラックが発生しない温度
でダイボンドすることができるダイボンド材を使用して
Ｃｕワイヤをボンディングした半導体装置を得ることを
目的とする。
さらに、Ｃｕワイヤ先端を溶融して形成されるＣｕボー
ルが、温度を保持することによる表面酸化膜の成長やＣ
ｕボールの硬度が高くなることを抑制し、圧着時に印加
される超音波振動によりＣｕとＡ１の原子を効率良く振
動させて、ＡＩ排斥に至らない半導体装置の製造方法を
得ることを目的とする。
［課題を解決するための手段］ この発明に係る半導体装置は、ガラスコートとＡｔ＠極
パッドとの熱膨張差によるクラックを発生させない液相
線温度を有する半田によって、半導体素子をダイスパッ
ド上に固着したものである。
また、この発明の別の発明に係る半導体装置の製造方法
は、銅ワイヤの先端を溶融して形成した銅ボールを、１
５０ｍｓ（ミリ秒）以内の時間で半導体素子上のＡＩ電
極パッドまで降下、接触して塑性変形を開始し、銅ボー
ルの高さが２５μｍ以下となるように銅ボールを上記ア
ルミニウム電極パッドに圧接するものである。
［作　用コ この発明においては、ガラスコートにクラックを発生さ
せず、ダイスパッドの銀メツキと半導体素子の裏面に形
成されたＡｕメタライズ層により、半導体素子全体を強
固にダイスパッド上に固定させることができる。
また、この発明の別の発明においては、Ｃｕボールの形
成からＡ１電極パッドに接触するまでの時間と圧着時の
Ｃｕボールの高さを所定の値とすることによって、Ｃｕ
ボールの加工硬化性を低下させ、ＣｕボールをＡ１電極
パッドに接合する時にＡＩが排斥されることを防止する
。
［実施例コ この発明が従来技術と大きく異なる点は、まず第一に、
従来技術ではワイヤ材がＡｕからＣｕへ変わったことに
よって克服すべき点を明確に分析していないため、製品
の信頼性を高めたり、量産可能な製造技術に確立されて
いないことである。これに対してこの発明では、Ａｕボ
ール以上に加工硬度性の大きいＣｕボールの塑性変形を
改善することを第一に考慮して、超音波振動を確実にＣ
ｕボールとＡ、　Ｉ電極パッドに作用させるために、半
田系のダイボンド材を選択しな、第二に、半導体素子の
加熱温度がガラスコート−クラックを発生させない必要
性から、従来実績のあるＰｂ−５％Ｓｎ半田等液相線温
度が３７０℃以下のものを選択した。最後に、Ｃｕボー
ルの塑性変形性を悪くするＣｕボール表面の酸化膜の成
長を抑え、Ｃｕボール自体の保持する熱を活用するため
に、Ｃｕボールの形成からＡＩ電極パッドに接触するま
での時間を１５０ｍｓ以下とし、超音波エネルギーを効
率良く作用させるため、Ｃｕボールの圧着高さをできる
だけ小さく、すなわち２５μｍ以下とするものである。
以下、図面に基づき、この発明をさらに詳細に説明する
。第１図はこの発明の一実施例を示す断面図であり、（
１）〜（３）、（５）〜（９）は上述した従来の半導体
装置におけるものと全く同一である。
半導体素子（１）の裏面にはＡｕメタライズ層く１６）
として例えばＴｉ−Ｎｉ−Ａｕが施されており、このメ
タライズ層（１６）とダイスパッド（３）上の銀メツキ
（２）との間には、半田（１７）として例えばＰｂ−５
％Ｓｎ半田を介在させることによって、半導体素子（１
）をダイスパッド（３）上に固定している。
第２図はＣｕボール形成後のワイヤボンド工程を示す構
成図であり、Ｃｕボール（８ａ）をＡＩｔ極バッド（５
）上に圧接するキャピラリー・チップ（１８）が、半導
体素子（１）の上方に配置されている。また、ダイスパ
ッド（３）の下には、ダイスパッド（３）を加熱するた
めのし−トブロック（１９）が置かれでいる。
」−述１．　、ｑ：ように構成された゛］′、導体装置
Ｗ　ｆ１ニア、、、おいてＣ１ｕボ・−ル（８ａ）は、
第３図に小ずよつに、キャピラリー　　チップ（１８）
と共にＡ１電極バッド（５）１−に同士１１、。入ヤじ
う・リー　・デツプ（１８）からの尚重く約１ｓＯｙ）
ど超音波振動エネルギ・−１及びｌ−、−、、、、、−
ドブｌ−７ツク〈１９）からの熱エネルギー（約２８０
”Ｃ）４こ、、Ｊニー）て、Ａｌｌ電極バラで（５）と
接ず１シる、１ □こて、（：Ｕボ・−ル（８ａ）の塑性・変形を定星的
（１，″把握するため１．、二、−・定の超音波振動〕
、ネルギーをＡ−ヤビラリ・−づツブ（１８）４．″加
ノーてＣ−’：　ｌＩボ〜ル（８ａ）をＡ１電極バッ１
で（５）に接台１、た抄１、二のＣｕボール（８ａ）の
高さ（ｈ　）を、Ｃｕボール（８ａ）の形成からＡＩ電
極パッド（５）に接触１″るま゛（：′の時間（１）を
変化させて測定＋、　ｆ、。その結果を第・１図に承り
。、−の図から、上記時間ｔか］、　Ｅｉ　（−、）ｍ
！、以内では（ユ１」ボール（８ａ）の高さのバランＡ
が少なく良好であるが、１５０ｍｓを越えるとＣｕボー
ル（８ａ）の高さが一定どならずバランＡ・か大きくな
るので好ま１．＜ない４．従）で　時間ｔが短い程（：
ｕボール（８ａ）の塑性変形が良好゛（、′、製声装置
の機械的制約から判断ｊ、ても、１５　Ｏｍ　ｓ以内が
最良な染件て゛ある。−とが判イ、。さらに、好適には
１２ｒ）ｍｓ以干て゛あり、１５０　ｍ　ｓ−１，ＯＯ
ｍ　８４．−おいて伊・また結果が得らノする。
まｆ′、：、圧接ｊ、た俊のＣ１１ボール（８ａ）の高
さが２５１１　ｍ以Ｉ′Ｊては、半導体素子（１）への
損傷はなく、Ｃｕ　−Ａ　Ｉ合金も良好Ｃ，″゛４成す
るが、Ｃｕボール（８ａ）の高さが２５　）ｔ　ｒｎを
越えるど、゛ｒ導体素Ｆ　（１）への損傷が生１′、同
時に合金の生成が不１分となり信頼性を低ト′させる原
因となる。なお、（”１１ボール（８ａ）の高さ【ｌは
、第５図に示ツＡ−ヤじラリ−チップ（１８ａ）の場合
は、Ｃｕボール（８＆）の凹部（８ｂ）とＡ１電極バッ
ド（５）の最知距離を示すものとする。また、第４区に
おいて、Ａは生成しプ、這、゛リボール（８ａ）の径が
小さい場白・、［）は４成Ｉ、２人７．　Ｃｕボール（
８ａ）の径が大きい場合である。通常、Ｃｕワイヤ（８
）の外径は２５　／４　ｍ程度　圧接されブ、′：Ｃｕ
ボール（８ａ）の外径は］、　Ｑ　Ｑ　μｍ以下こ”あ
る。
次に、樹脂材」」−後の！４″−導体装置の２００て、
゛におｉ−＋る高温保存寿命を評価する試験を行ったと
ころ、第０図に示づ結果が得られた。この図から明らか
なよう１．’、この発明（、こよる半導体装置の高温保
存背合（図中、Ｃてイくｔ）は、従来の゛Ｖ導体装置の
高温保存寿命（図中、■）で示す）に比較１−２で改善
効果か見らノｑ−，ｆ；　、同じ＜　１２１．　’Ｃ１
１００％ｌ（Ｈ（こお（つる耐湿性試験を行い、これを
評価すると、第７図のワイブル・プロット図に示すよう
に、この発明による半導体装置の特性（図中、Ｅで表す
）は従来の゛１４導体装置（図中、Ｆで表す）に比較し
て改善効果がみられた。これらは半導体素子の構造解析
によ−）でも裏（＝ｊけられる。すなわち、ボンディン
グされたＣｕボール（８ａ）を硝酸（ＨＮ　Ｏ３）を使
−）”Ｃエツチングした後のＡ１電極バッド（５）の甲
面図及び側面断面図をそれぞれ第８Ａ図及び第８Ｂ図に
示す。こわらの図から明らかなように、少量のＡ１排斥
が起こってＡ１排斥部（１１）が生じるものの、■地の
８１０．膜（１３）は露出してぃない。Ｊ、た、第９図
に示すように、ダイボンド後の半導体素子（１）を８０
℃・５９０て”のリン酸（＋（、ｉ：、＋　ｃ：＞　４
）溶液中に２０分間浸し”Ｃも、ＡＩ配線（１４）が腐
食されることがなく、ガラスコートクラックも発生しな
かった。
なお、上述した実施例では８半田材とし７てｐｂ５％Ｓ
ｎ’ｌ田を使用したが、液相線温度が３７０°Ｃ以下の
ものであｔｌば、他のどのような半田て′あっても同様
に使用することができる。例えば　Ｐｂ−８ｎ（５％以
上Ｓ　ｎ）　、Ｐ　ｂ−ＡＨ，Ｐ　ｂＩ　ｎ、Ｓｎ−Ａ
ｇ、、　Ｐｂ−Ａｇ−８ｎ、　Ｐｂ−ＡＨ−Ｉ　ｎ等の
半田が使用できる。さらに、金メタライズ層く］６）と
して、Ｔ　ｉ　−Ｎ　ｉ−Ａ　ｕを使用しｔ′：が、表
面がＡｕ又はＡｇでメタライズされていればよく、メタ
ライズ層としてはＡεメタライズ層であってもよく、例
えばＣｒ−ＡＨ等が使用できる。
また、半導体素子（１）は、プレーナー型のＩＣでない
ガラスコートがないもの、又はＳｉＯ２膜等の絶縁膜の
ないトランジスタでもよく、基板自体もＳｉ以外のＧ　
ａ　Ａ　ｓ等の化合物半導体であってもよい、さらに、
Ａ１電極パッド（５）のＡ１合金の下地構造は、ＳｉＯ
２膜に限定するものではなく、他の材料による部材であ
ってもよい。
［発明の効果〕 この発明は、以上説明したとおり、リードフレームのダ
イスパッドと、このダイスパッド上に設けられ、ＡＩ電
極パッド及びガラスコートを有する半導体素子と、この
半導体素子と上記ダイスパッドとを固着する半田であっ
て、上記ガラスコートと上記ＡＩ電極パッドとの熱膨張
差によるクラックを発生させない液相線温度を有する半
田と、上記ＡＩ電極パッドにワイヤボンディングされた
銅ワイヤとを備えたので、ダイスパッド上に半導体素子
を強固に固定すると共に、ガラスコート−クラックの発
生を抑えることができるという効果を奏する。
また、銅ワイヤの先端を溶融して銅ボールを形成し、こ
の銅ボールの形成から１５０ｍｓ以内の時間で上記銅ボ
ールを半導体素子上のＡ１電極パッドまで降下、接触さ
せ、次いで、上記銅ボールの高さが２５μｍ以下となる
ように銅ボールを上記ＡＩｔ極バッドに圧接するので、
塑性変形性が良好な状態でＡＩ電極パッドとＣｕボール
を接合させることができる。
さらに、超音波振動を確実にＣｕボールとＡ１電極パッ
ドに作用させて、Ａ！排斥の発生を抑えることができる
。また、最大のメリットは、Ａｕワイヤのボンディング
・プロセスを殆ど変えることな（Ｃｕワイヤのボンディ
ングを行うことができるので、製品としての実用可能な
信頼性を確保できたことである。
【図面の簡単な説明】 第１図はこの発明の一実施例による半導体装置を示す断
面図、第２図はＣｕボール形成後のワイヤボンド工程を
示す構成図、第３図及び第５図はＡ１電極パッドにＣｕ
ボールを接合した状態を示す断面図、第４図はＣｕボー
ルの形成からＡ１電極パッドへＣｕボールが接触するま
での時間とＣｕボールの高さとの関係を示す線図、第６
図はこの発明及び従来の半導体装置の高温保持寿命の試
験結果を示すワイブル・プロット図、第７図はこの発明
及び従来の半導体装置の耐湿性試験の結果を示すワイブ
ル・プロット図、第８Ａ図及び第８Ｂ図はボンディング
されたＣｕボールを硝酸によりエツチングをした後のＡ
１電極パッドのそれぞれ平面図及び側面断面図、第９図
はダイボンド後の半導体素子をリン酸溶液中に浸した場
合のガラスコート−クラックを構造解析した平面図、第
１０図及び第１１図は従来の半導体装置を示す断面図、
第１２Ａ図及び第１２Ｂ図は従来の半導体装置のＡＩ電
極パッドを構造解析した平面図と側面断面図、第１３Ａ
図及び第１３Ｂ図は従来のダイボンド後の半導体装置を
示すそれぞれ斜視図及び側面断面図、第１４図はダイボ
ンド後の半導体素子をリン酸溶液中に浸した場合のガラ
スコート−クラックを構造解析した平面図である。 図において、（１）は半導体素子、（２）、くっ）は銀
メツキ、（３）はダイスパッド、（４）はエポキシ樹脂
、（５）はＡ１電極パッド、（６）はガラスコート、（
７）はインナーリード、（８）はＣｕワイヤ、（８ａ）
はＣｕボール、（８ｂ）は凹部、　（１１）はＡＩ排斥
部、（１２）はＡＩ膜、（１３）はＳ　ｉ　Ｏ２膜、く
１４）はアルミニウム配線、（１５）はクラック、（１
６）はＡｕメタライズ層、（１７）は半田、（１８）。 （１８ａ）はキャピラリー・チップ、（１９）はヒート
ブロックである。 なお、各図中、同一符号は同一または相当部分を示す。

Claims (2)

    【特許請求の範囲】
  1. （１）リードフレームのダイスパッドと、このダイスパ
    ッド上に設けられ、アルミニウム電極パツド及びガラス
    コートを有する半導体素子と、この半導体素子と上記ダ
    イスパッドとを固着する半田であって、上記ガラスコー
    トと上記アルミニウム電極パッドとの熱膨張差によるク
    ラックを発生させない液相線温度を有する半田と、上記
    アルミニウム電極パッドにワイヤボンディングされた銅
    極細線とを備えたことを特徴とする半導体装置。
  2. （２）銅極細線の先端を溶融して銅ボールを形成し、こ
    の銅ボールの形成から１５０ｍｓ以内の時間で上記銅ボ
    ールを半導体素子上のアルミニウム電極パッドまで降下
    、接触させ、次いで、上記銅ボールの高さが２５μｍ以
    下となるように銅ボールを上記アルミニウム電極パッド
    に圧接することを特徴とする半導体装置の製造方法。
JP2001467A 1990-01-10 1990-01-10 半導体装置及びその製造方法 Pending JPH03208355A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2001467A JPH03208355A (ja) 1990-01-10 1990-01-10 半導体装置及びその製造方法
US07/505,482 US5023697A (en) 1990-01-10 1990-04-06 Semiconductor device with copper wire ball bonding
GB9010385A GB2239829B (en) 1990-01-10 1990-05-09 Semiconductor device and method of producing the same
DE4021031A DE4021031C2 (de) 1990-01-10 1990-07-02 Verfahren zur Herstellung eines Halbleiterbauelementes
KR1019900018073A KR940003563B1 (ko) 1990-01-10 1990-11-09 반도체 장치 및 그 제조방법
GB9323785A GB2271073B (en) 1990-01-10 1993-11-18 Method of producing a semiconductor device
SG155894A SG155894G (en) 1990-01-10 1994-10-21 Semiconductor device and method of producing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001467A JPH03208355A (ja) 1990-01-10 1990-01-10 半導体装置及びその製造方法
SG155894A SG155894G (en) 1990-01-10 1994-10-21 Semiconductor device and method of producing the same

Publications (1)

Publication Number Publication Date
JPH03208355A true JPH03208355A (ja) 1991-09-11

Family

ID=26334679

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (5)

Country Link
JP (1) JPH03208355A (ja)
KR (1) KR940003563B1 (ja)
DE (1) DE4021031C2 (ja)
GB (1) GB2239829B (ja)
SG (1) SG155894G (ja)

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US5455195A (en) * 1994-05-06 1995-10-03 Texas Instruments Incorporated Method for obtaining metallurgical stability in integrated circuit conductive bonds
US6376910B1 (en) * 1999-06-23 2002-04-23 International Rectifier Corporation Solder-on back metal for semiconductor die
JP2017135392A (ja) * 2009-06-18 2017-08-03 ローム株式会社 半導体装置

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JPS532177A (en) * 1976-06-24 1978-01-10 Focke Pfuhl Verpack Automat Package
JPS5321771A (en) * 1976-08-11 1978-02-28 Sharp Kk Electronic parts mounting structure
JPS6447039A (en) * 1987-08-18 1989-02-21 Mitsubishi Electric Corp Wire-bonding

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JPS586143A (ja) * 1981-07-02 1983-01-13 Matsushita Electronics Corp 半導体装置
JPS5873127A (ja) * 1981-10-28 1983-05-02 Hitachi Ltd Ｉｃチツプのはんだ溶融接続方法
CH662007A5 (en) * 1983-12-21 1987-08-31 Bbc Brown Boveri & Cie Method of soldering semiconductor components
DE3523808C3 (de) * 1984-07-03 1995-05-04 Hitachi Ltd Verfahren zum Löten von Teilen einer elektronischen Anordnung aus unterschiedlichen Werkstoffen und dessen Verwendung
DE3446780A1 (de) * 1984-12-21 1986-07-03 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren und verbindungswerkstoff zum metallischen verbinden von bauteilen
GB2178683A (en) * 1985-07-11 1987-02-18 Nat Semiconductor Corp Improved semiconductor die-attach method and product
DE3641524A1 (de) * 1985-12-10 1987-06-11 Mitsubishi Electric Corp Verfahren zur herstellung eines halbleiterbauelements
DE3641689A1 (de) * 1985-12-24 1987-06-25 Mitsubishi Electric Corp Verfahren zur herstellung eines halbleiterbauelements und eines darin verwendeten halbleiterchips
JPS63148646A (ja) * 1986-12-12 1988-06-21 Toshiba Corp 半導体装置
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JPS532177A (en) * 1976-06-24 1978-01-10 Focke Pfuhl Verpack Automat Package
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5455195A (en) * 1994-05-06 1995-10-03 Texas Instruments Incorporated Method for obtaining metallurgical stability in integrated circuit conductive bonds
US6376910B1 (en) * 1999-06-23 2002-04-23 International Rectifier Corporation Solder-on back metal for semiconductor die
JP2017135392A (ja) * 2009-06-18 2017-08-03 ローム株式会社 半導体装置
US10163850B2 (en) 2009-06-18 2018-12-25 Rohm Co., Ltd. Semiconductor device

Also Published As

Publication number Publication date
KR940003563B1 (ko) 1994-04-23
GB2239829A (en) 1991-07-17
DE4021031C2 (de) 1995-04-20
KR910015024A (ko) 1991-08-31
GB2239829B (en) 1994-07-06
GB9010385D0 (en) 1990-06-27
SG155894G (en) 1995-03-17
DE4021031A1 (de) 1991-07-11

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