JP2533675B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

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Publication number
JP2533675B2
JP2533675B2 JP15535990A JP15535990A JP2533675B2 JP 2533675 B2 JP2533675 B2 JP 2533675B2 JP 15535990 A JP15535990 A JP 15535990A JP 15535990 A JP15535990 A JP 15535990A JP 2533675 B2 JP2533675 B2 JP 2533675B2
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JP
Japan
Prior art keywords
electrode pad
metal
semiconductor device
semiconductor element
inner lead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP15535990A
Other languages
English (en)
Other versions
JPH0448742A (ja
Inventor
清昭 津村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15535990A priority Critical patent/JP2533675B2/ja
Priority to DE19904039536 priority patent/DE4039536A1/de
Publication of JPH0448742A publication Critical patent/JPH0448742A/ja
Application granted granted Critical
Publication of JP2533675B2 publication Critical patent/JP2533675B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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Description

【発明の詳細な説明】 ［産業上の利用分野］ この発明は、半導体装置及びその製造方法、特に、吸
湿後の半田浸漬処理において、半導体素子と封止樹脂の
間に生じる応力の影響を最小限にすることができる、電
極パッドと金属極細線の金属ボールとの接合構造を持っ
た半導体装置及びその製造方法に関するものである。
［従来の技術］ 第４図は従来の一般的な半導体装置を示す断面図であ
り、図において、Si基板上に製造された半導体素子
（１）は、ダイパッド（２）上にダイボンド材（３）に
より固定されており、半導体素子（１）の上部には電極
パッド（４）が形成されている。この電極パッド（４）
とインナーリード（５）とは、Au（金）を主成分とする
合金で造られた金属極細線（ワイヤ）（６）により電気
的に接続されている。また、インナーリード（５）は外
部リード（７）と一体となっている。上記半導体素子
（１）、ダイパッド（２）、インナーリード（５）及び
金属極細線（６）はエポキシ樹脂等の封止樹脂（８）に
封止され、半導体パッケージとなる。
第５図は、従来の半導体装置の電極パッド（４）と金
属ボールの接合部を示す拡大断面図であり、図におい
て、電極パッド（４）は、半導体素子（１）上に順次Si
O2膜（９）、Ｂ（ボロン）とＰ（リン）入りのガラスで
あるBPSG膜（10）及びAl（アルミニウム）を主成分とす
るAl膜（11）からなるAlを主成分とする合金薄膜により
構成されている。このAl膜（11）の上に金属ボール（1
2）が圧着され、これら金属ボール（12）とAl膜（11）
との間にはAu−Al合金層（13）が形成される。また、金
属ボール（12）の圧着された際の圧着高さｈは20μｍ〜
30μｍである。
次に、上述したように構成された半導体装置の製造方
法について説明する。第6A図に示すように、金属極細線
（６）はキャピラリー（14）の中を通り、トーチ棒（1
5）に対向している。これらの金属極細線（６）とトー
チ棒（15）との間に高電圧を印加することにより、第6B
図に示すように金属極細線（６）の先端を溶融させ金属
ボール（12）を形成する。この後、第6C図に示すよう
に、ヒートブロック（16）上に置かれた半導体素子
（１）の電極パッド（４）上にキャピラリー（14）を降
下させ、金属ボール（12）を塑性変形しながら金属ボー
ル（12）のAuと電極パッド（４）のAlとの合金を生成す
ることにより、金属極細線（６）と電極パッド（４）と
の接合を完了する。さらに、第6D図に示すように、キャ
ピラリー（14）から金属極細線（６）を繰り出し、イン
ナーリード（５）にも同様にAuの接合を完了させた後、
金属極細線（６）を引きちぎり、キャピラリー（14）と
共に上昇して第6A図に示した状態に戻る。次いで、上記
半導体素子（１）、電極パッド（４）、インナーリード
（５）及び金属極細線（６）等を封止樹脂（８）により
封止して半導体装置とする。
次に、金属ボール（12）と電極パッド（４）との接合
についてさらに詳細に説明する。第７図はキャピラリー
（14）の先端と金属ボール（12）を示す拡大断面図であ
り、キャピラリー（14）の先端の形状は、金属極細線
（６）の通路となりかつ金属ボール（12）を押し潰すた
めに、電極パッド（４）と平行な面（17）及びテーパー
面（18）で構成されている。第８図に示すように、金属
ボール（12）はキャピラリー（14）のテーパー面（18）
で保持されながら電極パッド（４）に押しつけられるこ
とで塑性変形し、キャピラリー（14）の内面に沿った形
に成形される。この時、半導体素子（１）に加えられる
熱と、金属ボール（12）を押し潰す荷重と、キャピラリ
ー（14）を通じて印加される超音波振動エネルギーとに
より、金属ボール（12）のAuと電極パッド（４）のAlと
の合金、すなわち、Au−Al合金層（13）が生成する。こ
のAu−Al合金層（13）により電極パッド（４）とインナ
ーリード（５）との接合が完了し、これらの電気的接続
が図られる。
従来、第７図に示すように、キャピラリー（14）の金
属極細線（６）の通路径Ｈ＝50μｍφ、テーパー面の径
Ｂ＝77μｍφとすると、金属ボール（12）の径Ｄ＝78〜
87μｍφとなり、これにより半導体装置を製造してい
た。
［発明が解決しようとする課題］ 上述したような半導体装置では、半導体装置をプリン
ト基板等に実装した後の信頼性を評価する方法として、
吸湿後の半田浸漬処理を実施後、耐湿性試験等を行って
いる。例えば、半導体装置を85℃、相対湿度85％の雰囲
気下に24時間放置した後、この半導体装置を260℃の半
田槽に30秒間浸漬する処理を行う。この処理によって、
封止樹脂（８）と半導体素子（１）との間に応力（第４
図中の（1a））が生じ、この応力によって、第９図に示
すように金属ボール（12）がAu−Al合金層（13）、Al膜
（11）、BPSG膜（10）及びSiO2膜（９）と共に半導体素
子（１）のSi基板に亀裂すなわちSiクラック（1b）を生
じ、半導体素子（１）から剥離してしまうという問題点
があった。
この発明は、このような問題点を解決するためになさ
れたもので、接合後の金属ボールの形状を工夫すること
で、金属ボールが封止樹脂から受ける応力を小さくする
ことによって、Siクラックの発生を防止した半導体装置
及びその製造方法を得ることを目的とする。
［課題を解決するための手段］ この発明に係る半導体装置及びその製造方法は、金属
極細線の先端を溶融して形成した金属ボールを電極パッ
ドに加圧して塑性変形した圧着ボールの高さを５μｍか
ら15μｍの範囲として、電極パッドとインナーリードと
を接合するものである。
［作 用］ この発明においては、インナーリードと電極パッドと
の接合を高さが５μｍから15μｍの範囲の圧着ボールで
行うので、半導体素子と封止樹脂との間で生じる応力の
影響を最小限にすることができ、半導体装置の吸湿後の
半田浸漬処理に対して、信頼性を向上させることができ
る。
［実施例］ 第１図はこの発明の一実施例による半導体装置を示す
断面図、第２図は第１図に示した半導体装置の電極パッ
ドと金属ボールとの接合部の拡大断面図であり、（１）
〜（５）、（７）〜（11）及び（13）は上述した従来の
半導体装置におけるものと全く同一である。これらの図
において、Auを主成分とする合金で造られた金属極細線
（6A）先端の金属ボールが圧着され塑性変形した金属ボ
ール（12A）（圧着ボールとする）の高さh0は、５μｍ
〜15μｍの範囲である。
上述したように構成された半導体装置において、圧着
ボールの高さh0は、第７図に示す金属ボール（12A）の
直径Ｄの寸法を所定の範囲に設定することによって、調
節することができる。すなわち、例えばキャピラリー
（14）の金属極細線（6A）の通路径Ｈ＝50μｍφ、テー
パー面の径Ｂ＝77μｍφとすると、金属ボール（12A）
の径Ｄ＝63〜74μｍφの範囲に設定すれば、圧着ボール
の高さh0は５μｍ〜15μｍの範囲となる。
次に、一般的な半導体装置の圧着ボールの高さ（ｈ）
と封止樹脂から受ける応力（Ｆ）（第４図中（1a））と
の関係を計算により求めたグラフを第３図に示す。圧着
ボールの高さｈをパラメーターとすると、ｈ＞15μｍの
領域IIでは半導体素子（１）にSiクラックが発生する。
また、従来の半導体装置における20μｍ≦ｈ≦30μｍの
領域IIIでは、上記領域IIに含まれてしまうので、同様
にSiクラックが発生する。さらに、Au−Al合金が175
℃、2000時間の高温保存状態で成長する合金層の厚さは
約５μｍであるから、ｈ＜５μｍの領域Ｉでは高温保存
寿命が従来より短くなる可能性がある。従って、５μｍ
≦ｈ≦15μｍの範囲であれば高温保存寿命が優れかつ封
止樹脂の応力が小さいので、Siクラックは発生せず、信
頼性の高い半導体装置が得られる。
なお、上述した実施例では、電極パッド（４）の構造
をAL/BPSG/SiO2としたが、これ以外の一般的な構造、す
なわちAl/MoSi/PolySi/SiO2、AlSi/MoSi/PolySi/SiO2、
AlSi/TiN/TEOS（テトラエチルオルソシリケート）/BPSG
/SiO2、AlSiCu/TiN/TEOS/BPSG/SiO2などを使用してもよ
く、Siクラックが発生する処理条件は異なるが、いずれ
の構造においても半導体装置の信頼性を向上させること
ができる。
また、金属極細線はAuを主成分とする合金に限らずC
u、Ag、Al、Feなどの一般的な金属等であってもよく、
上述の同様の効果を奏する。
［発明の効果］ この発明は、以上説明したとおり、金属極細線の先端
を溶融して形成した金属ボールを電極パッドに加圧して
塑性変形した圧着ボールの高さを５μｍから15μｍの範
囲として、電極パッドとインナーリードとを接合するの
で、半導体装置の吸湿後の半田浸漬処理に対して、十分
なマージン拡大が得られ、金属ボールが半導体素子から
剥離せず信頼性が向上した半導体装置が得られるという
効果を奏する。
【図面の簡単な説明】
第１図はこの発明の一実施例による半導体装置を示す断
面図、第２図は第１図に示した半導体装置の電極パッド
と金属ボールとの接合部を示す拡大断面図、第３図は半
導体装置の圧着ボールの高さと封止樹脂から受ける応力
との関係を示す線図、第４図は従来の半導体装置を示す
断面図、第５図は第４図に示した半導体装置の電極パッ
ドと金属ボールとの接合部を示す拡大断面図、第6A図〜
第6D図は半導体装置の一連の製造工程を示す概略構成
図、第７図は金属ボール及びキャピラリーの先端を示す
拡大断面図、第８図は金属ボールが加圧、塑性変形して
圧着された状態を示す拡大断面図、第９図は金属ボール
が半導体素子から剥離した状態を示す拡大断面図であ
る。 図において、（１）は半導体素子、（２）はダイパッ
ド、（３）はダイボンド材、（）は電極パッド、（５）
はインナーリード、（6A）は金属極細線、（７）は外部
リード、（８）は封止樹脂、（９）はSiO2膜、（10）は
BPSG膜、（11）はAl膜、（12A）は金属ボール、（13）
はAu−Al合金層である。 なお、各図中、同一符号は同一または相当部分を示す。

Claims (2)

    (57)【特許請求の範囲】
  1. 【請求項１】半導体素子と、この半導体素子に設けられ
    た電極パッドと、インナーリードと、このインナーリー
    ドと上記電極パッドとを電気的に接続する金属極細線
    と、これら半導体素子、電極パッド、インナーリード及
    び金属極細線を封止する封止樹脂とを備え、上記電極パ
    ッドと上記インナーリードとは、上記金属極細線の先端
    を溶融して形成した金属ボールを上記電極パッドに加圧
    して塑性変形した圧着ボールの高さが５μｍから15μｍ
    の範囲で接合されることを特徴とする半導体装置。
  2. 【請求項２】電極パッドが設けられた半導体素子をダイ
    パッドに固着し、金属極細線の先端を加熱、溶融して金
    属ボールを形成し、この金属ボールを上記電極パッドに
    加圧して塑性変形し高さが５μｍから15μｍの範囲の圧
    着ボールとして上記金属極細線の先端と上記電極パッド
    を接合し、上記金属極細線の他端をインナーリードに接
    合し、次いで、半導体素子、電極パッド、インナーリー
    ド及び金属極細線を封止樹脂で封止することを特徴とす
    る半導体装置の製造方法。
JP15535990A 1990-06-15 1990-06-15 半導体装置及びその製造方法 Expired - Lifetime JP2533675B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP15535990A JP2533675B2 (ja) 1990-06-15 1990-06-15 半導体装置及びその製造方法
DE19904039536 DE4039536A1 (de) 1990-06-15 1990-12-11 Halbleiterbauelement und herstellungsverfahren dafuer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15535990A JP2533675B2 (ja) 1990-06-15 1990-06-15 半導体装置及びその製造方法

Publications (2)

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JPH0448742A JPH0448742A (ja) 1992-02-18
JP2533675B2 true JP2533675B2 (ja) 1996-09-11

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Country Link
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DE (1) DE4039536A1 (ja)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10242360A (ja) 1997-02-25 1998-09-11 Oki Electric Ind Co Ltd 半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01201934A (ja) * 1988-02-08 1989-08-14 Mitsubishi Electric Corp ワイヤボンディング方法及びキャピラリチップ
JPH01215030A (ja) * 1988-02-24 1989-08-29 Hitachi Ltd 樹脂封止型半導体装置
JPH0243747A (ja) * 1988-08-04 1990-02-14 Mitsubishi Electric Corp 半導体装置

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DE4039536A1 (de) 1991-12-19
JPH0448742A (ja) 1992-02-18

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