DE4039536A1 - Halbleiterbauelement und herstellungsverfahren dafuer - Google Patents

Halbleiterbauelement und herstellungsverfahren dafuer

Info

Publication number
DE4039536A1
DE4039536A1 DE19904039536 DE4039536A DE4039536A1 DE 4039536 A1 DE4039536 A1 DE 4039536A1 DE 19904039536 DE19904039536 DE 19904039536 DE 4039536 A DE4039536 A DE 4039536A DE 4039536 A1 DE4039536 A1 DE 4039536A1
Authority
DE
Germany
Prior art keywords
metal wire
thin metal
ball
semiconductor device
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19904039536
Other languages
English (en)
Inventor
Kiyoaki Tsumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE4039536A1 publication Critical patent/DE4039536A1/de
Ceased legal-status Critical Current

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    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
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Description

Die Erfindung betrifft ein Halbleiterbauelement und ein Herstellungsverfahren dafür. Insbesondere betrifft die Erfindung ein Halbleiterbauelement mit einer Bondstruktur zwischen einem Elektrodenkontaktfleck und einer Metallkugel aus einem dünnen Metalldraht, die die Auswirkung von Beanspruchungen zwischen einem Halbleiterchip und Gießharz während einer Tauchlötbehandlung nach Feuchtigkeitsabsorption minimiert, sowie ein Verfahren zur Herstellung eines solchen Halbleiterbauelements.
Fig. 1 ist eine Querschnittsansicht eines konventionellen und üblichen Halbleiterbauelements. Darin ist ein auf einem Si- Substrat hergestellter Halbleiterchip 1 auf einer Chipkon­ taktstelle 2 mit einem Chipbondmaterial 3 befestigt, und Elektrodenkontaktflecke 4 sind auf der Oberfläche des Halbleiterchips 1 gebildet. Die Elektrodenkontaktflecke 4 und innere Anschlußleitungen 5 sind mit dünnen Metalldrähten 6 aus einer Legierung, deren Hauptbestandteil Gold (Au) ist, elektrisch verbunden. Die inneren Anschlußleitungen 5 sind Teil von äußeren Anschlußleitungen 7. Der Halbleiterchip 1, die Chipkontaktstelle 2, die inneren Anschlußleitungen 5 und die dünnen Metalldrähte 6 sind mit Gießharz wie etwa Epoxid­ harz umgossen unter Bildung eines Halbleitergehäuses.
Fig. 2 ist eine vergrößerte Querschnittsansicht einer Bond­ struktur zwischen dem Elektrodenkontaktfleck 4 und einer Me­ tallkugel im konventionellen Halbleiterbauelement. In Fig. 2 ist der Elektrodenkontaktfleck 4 auf einem Si-Substrat in der Reihenfolge SiO2-Schicht 9, BPSG-Schicht 10, die ein B (Bor) und P (Phosphor) enthaltendes Glas ist, und Al-Legierungs­ schicht 11 aufgebaut. Die Metallkugel 12 ist gegen die Al- Schicht 11 gedrückt, wobei eine Au-Al-Legierungsschicht 13 zwischen der Al-Schicht 11 und der Metallkugel 12 gebildet ist. Die Höhe h der Metallkugel 12 im gedrückten Zustand be­ trägt 20-30 µm.
Nachstehend wird ein Verfahren zur Herstellung eines so aufgebauten Halbleiterbauelements unter Bezugnahme auf die Zeichnungen beschrieben. Wie Fig. 3A zeigt, verläuft der dünne Metalldraht 6 durch eine einem Brenner- bzw. Lötstab 15 gegenüberliegende Kapillare 14. Wie Fig. 3B zeigt, wird die Spitze des dünnen Metalldrahts 6 durch Anlegen einer hohen Spannung zwischen dem dünnen Metalldraht 6 und dem Lötstab 15 geschmolzen, und die Metallkugel 12 wird gebildet. Danach be­ wegt sich, wie Fig. 3C zeigt, die Kapillare 14 nach unten auf den Elektrodenkontaktfleck 4 des auf der Chipkontaktstelle 2 befestigten Halbleiterchips 1, wobei das Lot 3 auf einem Wärmeblock 16 liegt, und durch die Metallkugel 12 wird eine Au-Al-Legierung gebildet, und die Metallkugel 12 wird auf dem Elektrodenkontaktfleck 4 plastisch verformt. Dadurch wird das Bonden des dünnen Metalldrahts 6 an den Elektrodenkontakt­ fleck 4 abgeschlossen. Wie Fig. 3D zeigt, ist ferner der dünne Metalldraht 6 aus der Kapillare 14 herausgeführt, um ein Au-Dünndrahtbonden wie das des Elektrodenkontaktflecks 4 für die innere Anschlußleitung 5 durchzuführen. Nach dem Au- Bonden wird der dünne Metalldraht 6 zum Abschneiden hochgezo­ gen und zusammen mit der Kapillare 14 aufwärts bewegt. Dann kehrt das Verfahren zu dem in Fig. 3A gezeigten Stadium zurück. Dies ist das Vorgehen bei der Herstellung des Halbleiterbauelements. Der Halbleiterchip 1, der Elektro­ denkontaktfleck 4, die innere Anschlußleitung 5, der dünne Metalldraht 6 usw. werden mit Gießharz 8 umgossen unter Bil­ dung eines Halbleitergehäuses.
Nachstehend wird das Bonden der Metallkugel 12 und des Elek­ trodenkontaktflecks 4 ausführlich erläutert. Fig. 4 ist eine vergrößerte Querschnittsansicht der Spitze der Kapillare 14 und der Metallkugel 12. Zum Zusammendrücken der Metallkugel 12 hat das Vorderende der Kapillare 14 eine verjüngte Fläche 18 und eine zum Elektrodenkontaktfleck 4 parallele Fläche 17, und ferner hat die Kapillare ein Durchgangsloch für den dün­ nen Metalldraht 6. Wie Fig. 5 zeigt, wird die Metallkugel 12 durch Drücken gegen den Elektrodenkontaktfleck 4 zusammenge­ drückt, während die verjüngte Fläche 18 der Kapillare 14 die Metallkugel 12 festhält. Die Metallkugel 12 nimmt somit eine der Innenfläche der Kapillare 14 entsprechende Gestalt an. Zu diesem Zeitpunkt wird aus Gold der Metallkugel 12 und Alu­ minium des Elektrodenkontaktflecks 4 durch das Aufbringen von Wärmeenergie auf den Halbleiterchip 1, eine Kraft zum Zusam­ mendrücken der Metallkugel 12 und Aufbringen von Ultra­ schallenergie durch die Kapillare 14 eine Au-Al- Legierungsschicht 13 gebildet. Durch die Au-Al- Legierungsschicht 13 wird das Bonden des Elektrodenkontakt­ flecks 4 und der inneren Anschlußleitung 5 abgeschlossen, wodurch eine elektrische Verbindung zwischen diesen hergestellt wird.
Nach Fig. 4 liegt unter der Annahme, daß der Durchmesser H des Durchgangslochs der Kapillare 14, durch die der dünne Metalldraht 6 der Kapillare 14 verläuft, 50 µm sowie der Durchmesser B der verjüngten Fläche 77 µm beträgt, der Durchmesser D der Metallkugel 12 konventionell in einen Be­ reich von 78-87 µm. Halbleiterbauelemente werden unter Anwen­ dung dieser Dimensionen hergestellt.
Bei einem solchen Halbleiterbauelement erfolgt die Bewertung der Zuverlässigkeit des Halbleiterbauelements nach dessen Montage auf einer Leiterplatte, wobei das Halbleiterbauele­ ment Feuchtigkeit absorbiert und in ein Lotbad eingetaucht wird, wonach ein Dampfdrucktest durchgeführt wird. Das Halb­ leiterbauelement wird beispielsweise in einer Atmosphäre mit 85% relativer Feuchte bei 85°C für 24 h gelagert und in ein Lotbad mit 260°C für 30 s eingetaucht. Durch diese Behandlung entstehen zwischen dem Gießharz 8 und dem Halblei­ terbauelement 1 Spannungen ((1a) in Fig. 1).
Dies ist insofern problematisch, als sich, wie Fig. 6 zeigt, die Metallkugel 12 aufgrund eines Risses im Si-Substrat des Halbleiterchips 1, d. h. des Si-Risses 1b, ablöst, wenn die Metallkugel 12 mit der Au-Al-Legierungsschicht 13, der Al- Schicht 11, der BPSG-Schicht 10 und der SiO2-Schicht 9 in Verbindung steht.
Die Erfindung dient der Beseitigung der vorgenannten Pro­ bleme. Aufgabe der Erfindung ist daher, ein Halbleiterbauele­ ment und ein Herstellungsverfahren dafür zu schaffen, bei dem keine Si-Risse auftreten, um die vom Gießharz auf die Me­ tallkugel wirkenden Spannungen durch Änderung der Gestalt der zusammengedrückten Metallkugel (Kugelhöhe) auf dem Elektro­ denkontaktfleck zu minimieren.
Nach einem Aspekt der Erfindung wird ein Halbleiterbauelement geschaffen, das umfaßt: einen Halbleiterchip; einen Elektro­ denkontaktfleck auf dem Halbleiterchip, eine innere An­ schlußleitung, einen dünnen Metalldraht, der die innere An­ schlußleitung und den Elektrodenkontaktfleck elektrisch verbindet, und Gießharz zum Umgießen des Halbleiterchips, des Elektrodenkontaktflecks, der inneren Anschlußleitung und des dünnen Metalldrahts, wobei der Elektrodenkontaktfleck und der dünne Metalldraht gebondet sind durch Schmelzen der Spitze des dünnen Metalldrahts unter Bildung einer Metallkugel und Drücken gegen den Elektrodenkontaktfleck unter Verformung der Metallkugel, deren zusammengedrückte Höhe im Bereich von 5-15 µm liegt, und wobei die andere Spitze des dünnen Metall­ drahts an die innere Anschlußleitung gebondet ist.
Nach einem weiteren Aspekt der Erfindung wird ein Verfahren zur Herstellung eines Halbleiterbauelements geschaffen, das folgende Schritte umfaßt: Befestigen eines Halbleiterchips, auf dem ein Elektrodenkontaktfleck angeordnet ist, auf einer Chipkontaktstelle, Bilden einer Metallkugel durch Schmelzen der Spitze eines dünnen Metalldrahts, Drücken der Metallkugel gegen den Elektrodenkontaktfleck und Verformen der Me­ tallkugel unter Bildung einer zusammengedrückten Kugel, deren Höhe im Bereich von 5-15 µm liegt, um den dünnen Metalldraht an den Elektrodenkontaktfleck zu bonden, Bonden der anderen Seite des dünnen Metalldrahts an eine innere Anschlußleitung; und Umgießen des Halbleiterchips, des Elektrodenkontakt­ flecks, der inneren Anschlußleitung und des dünnen Metall­ drahts mit Gießharz.
Die Erfindung wird nachstehend auch hinsichtlich weiterer Merkmale und Vorteile anhand der Beschreibung von Aus­ führungsbeispielen und unter Bezugnahme auf die beiliegenden Zeichnungen näher erläutert. Die Zeichnungen zeigen in:
Fig. 1 eine Querschnittsansicht eines konventionellen Halbleiterbauelements;
Fig. 2 eine vergrößerte Querschnittsansicht einer Bond­ struktur zwischen einem Elektrodenkontaktfleck und einer Metallkugel des in Fig. 1 gezeigten Halbleit­ erbauelements;
Fig. 3A bis 3D schematische Ansichten, die die Verfahrensschritte bei der Herstellung des Halbleiterbauelements zeigen;
Fig. 4 eine vergrößerte Querschnittsansicht der Metallkugel und der Spitze einer Kapillare;
Fig. 5 eine vergrößerte Querschnittsansicht, die das Sta­ dium zeigt, in dem die Metallkugel gegen den Elek­ trodenkontaktfleck gedrückt und plastisch verformt wird;
Fig. 6 eine vergrößerte Querschnittsansicht, die das Sta­ dium zeigt, in dem sich die Metallkugel von einem Halbleiterchip ablöst;
Fig. 7 eine Querschnittsansicht eines Halbleiterbauelements gemäß einem Ausführungsbeispiel der Erfindung;
Fig. 8 eine vergrößerte Querschnittsansicht einer Bond­ struktur zwischen einem Elektrodenkontaktfleck und einer Metallkugel des Halbleiterbauelements nach Fig. 7; und
Fig. 9 ein Diagramm, das die Beziehung zwischen einem Höhenbereich einer zusammengedrückten Kugel des Halbleiterbauelements und Beanspruchungen zeigt, die vom Gießharz auf die zusammengedrückte Kugel wirken.
Fig. 7 ist eine Querschnittsansicht eines Halbleiterbauele­ ments gemäß einem Ausführungsbeispiel, und Fig. 8 ist eine vergrößerte Querschnittsansicht einer Bondstruktur zwischen einem Elektrodenkontaktfleck und einer Metallkugel nach Fig. 7. Die Bezugszeichen 1 bis 5, 7 bis 11 und 13 bezeichnen die gleichen Komponenten wie bei dem oben beschriebenen konven­ tionellen Halbleiterbauelement. Dabei liegt die Höhe ho einer Metallkugel (zusammengedrückte Kugel) 12A im Bereich von 5-15 µm. Der dünne Metalldraht 6A besteht aus einer Legierung mit dem Hauptbestandteil Gold (Au).
Bei diesem Halbleiterbauelement kann die Höhe ho der zusam­ mengedrückten Kugel durch Einstellen der Dimension des in Fig. 4 gezeigten Durchmessers D der Metallkugel 12A eingestellt werden. Unter der Annahme, daß der Durchmesser H des Durchgangslochs, durch den der dünne Metalldraht ver­ läuft, 50 µm und der Durchmesser B einer verjüngten Fläche 77 µm beträgt, liegt beispielsweise der Durchmesser D der Metallkugel 12A in einem Bereich von 63-74 µm und die Höhe ho der zusammengedrückten Kugel in einem Bereich von 5-15 µm.
In dem Diagramm von Fig. 9 ist eine Beziehung zwischen einem Bereich der Höhe h der zusammengedrückten Kugel eines üblichen Halbleiterbauelements und der durch das Gießharz ausgeübten Beanspruchung F ((1a) in Fig. 1) berechnet. Unter der Annahme, daß die Höhe h der zusammengedrückten Kugel ein Parameter ist, tritt ein Si-Riß im Halbleiterchip 1 innerhalb einer Zone II mit h<15 µm auf. Ferner tritt ein Si-Riß auch in einer Zone III mit 20 µm≦h≦30 µm auf, die die Höhe der zusammengedrückten Kugel des konventionellen Halbleiter­ bauelements umfaßt, da die Zone III in der Zone II enthalten ist. Da die Dicke einer Au-Al-Legierungsschicht, die unter Hochtemperatur-Lagerbedingungen von 175°C für 2000 h wächst, ca. 5 µm beträgt, kann außerdem die Hochtemperatur- Lagerbeständigkeit in Zone I mit h<15 µm geringer sein als die konventionelle Lagerbeständigkeit. Wenn die Höhe h in einem Bereich von 5 µm≦h≦15 µm liegt, ist also eine Hochtem­ peratur-Lagerbeständigkeit sichergestellt, und es treten keine Si-Risse auf, weil die Beanspruchung durch das Gießharz gering ist; somit kann ein äußerst zuverlässiges Halbleiter­ bauelement erhalten werden.
Beim oben beschriebenen Ausführungsbeispiel hat der Elektro­ denkontaktfleck 4 zwar den üblicherweise verwendeten Aufbau Al/BPSG/SiO2; es kann aber auch ein anderer Aufbau mit Ma­ terialien wie etwa Al/MoSi/PolySi/SiO2, AlSi/MoSi/PolySi/SiO2, AlSi/TiN/TEOS (Tetraethylorthosilicat)/BPSG/SiO2 oder AlSiCu/TiN/TEOS/BPSG/SiO2 verwendet werden. Obwohl die Bedin­ gungen bezüglich der Behandlung von Si-Rissen unterschiedlich sein können, kann die Zuverlässigkeit des Halbleiterbauele­ ments bei jeder der oben genannten Strukturen verbessert wer­ den.
Außerdem besteht der dünne Metalldraht nicht notwendigerweise aus einer Legierung, deren Hauptbestandteil Gold (Au) ist; er kann auch aus gewöhnlichen Metallen wie etwa Kupfer (Cu), Silber (Ag), Aluminium (Al) oder Eisen (Fe) bestehen und hat dennoch die gleiche Wirkung wie bei diesem Ausführungs­ beispiel.

Claims (5)

1. Halbleiterbauelement, umfassend:
einen Halbleiterchip (1);
einen Elektrodenkontaktfleck (4) auf dem Halbleiterchip (1);
eine innere Anschlußleitung (5);
einen dünnen Metalldraht (6), der die innere Anschlußleitung (5) und den Elektrodenkontaktfleck (4) elektrisch verbindet; und;
Gießharz (8) zum Umgießen des Halbleiterchips (1), des Elektrodenkontaktflecks (4), der inneren Anschlußleitung (5) und des dünnen Metalldrahts (6), dadurch gekennzeichnet,
daß der Elektrodenkontaktfleck (4) und der dünne Metalldraht (6) gebondet sind durch Schmelzen der Spitze des dünnen Metalldrahts (6) unter Bildung einer Metallkugel (12) und
Drücken gegen den Elektrodenkontaktfleck (4) unter Verformung der Metallkugel (12), deren zusammengedrückte Höhe (h) im Bereich von 5-15 µm liegt, und
daß die andere Spitze des dünnen Metalldrahts (6) an die innere Anschlußleitung (5) gebondet ist.
2. Halbleiterbauelement nach Anspruch 1, dadurch gekennzeichnet, daß der dünne Metalldraht (6) aus einer Legierung besteht, deren Hauptbestandteil Gold ist.
3. Halbleiterbauelement nach Anspruch 1, dadurch gekennzeichnet, daß der Elektrodenkontaktfleck (4) eine Legierungsschicht ist, deren Hauptbestandteil Aluminium ist.
4. Halbleiterbauelement nach Anspruch 1, dadurch gekennzeichnet, daß der Elektrodenkontaktfleck (4) eine Dünnschicht aus Aluminium, BPSG und SiO2 ist.
5. Verfahren zur Herstellung eines Halbleiterbauelements, gekennzeichnet durch folgende Schritte:
Befestigen eines Halbleiterchips (1), auf dem ein Elektrodenkontaktfleck angeordnet ist, auf einer Chipkontaktstelle (2);
Bilden einer Metallkugel (12) durch Schmelzen an der Spitze eines dünnen Metalldrahts (6);
Drücken der Metallkugel (12) gegen den Elektrodenkontaktfleck (4) und Verformen der Metallkugel (12) unter Bildung einer zusammengedrückten Kugel (12A), deren Höhe im Bereich von 5- 15 µm liegt, um den dünnen Metalldraht (6) an den Elektrodenkontaktfleck (4) zu bonden;
Bonden der anderen Seite des dünnen Metalldrahts (6) an eine innere Anschlußleitung (5); und
Umgießen des Halbleiterchips (1), des Elektrodenkontaktflecks (4), der inneren Anschlußleitung (5) und des dünnen Metalldrahts (6) mit Gießharz (8).
DE19904039536 1990-06-15 1990-12-11 Halbleiterbauelement und herstellungsverfahren dafuer Ceased DE4039536A1 (de)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6169323B1 (en) 1997-02-25 2001-01-02 Oki Electric Industry Co., Ltd. Semiconductor device with improved leads

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JP2533675B2 (ja) 1996-09-11

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