JP2003309142A - 半導体装置及びその搭載方法 - Google Patents

半導体装置及びその搭載方法

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Publication number
JP2003309142A
JP2003309142A JP2002112340A JP2002112340A JP2003309142A JP 2003309142 A JP2003309142 A JP 2003309142A JP 2002112340 A JP2002112340 A JP 2002112340A JP 2002112340 A JP2002112340 A JP 2002112340A JP 2003309142 A JP2003309142 A JP 2003309142A
Authority
JP
Japan
Prior art keywords
semiconductor device
metal wire
lead
bonded
solder material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002112340A
Other languages
English (en)
Inventor
Kazumitsu Itabashi
一光 板橋
Kaoru Yamazaki
薫 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP2002112340A priority Critical patent/JP2003309142A/ja
Publication of JP2003309142A publication Critical patent/JP2003309142A/ja
Pending legal-status Critical Current

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Abstract

(57)【要約】 （修正有） 【課題】 樹脂封止型半導体装置を基板に無鉛半田材料
を用いて接合するため２５０〜２７０℃で加熱すると
き、封止樹脂内での断線の発生を防止すること。 【解決手段】 半導体素子６と端子８とこれらを接続す
る金属ワイヤ２’とを樹脂封止してなり、端子８の一部
は封止樹脂１１の外部へ延在している半導体装置１３で
あって、金属ワイヤ２’は端子８上に形成されたバンプ
１４上に金属ワイヤ２’の軸方向側面が接合された構造
を有している半導体装置。その基板への無鉛半田材料を
用いた搭載方法。

Description

【発明の詳細な説明】
【０００１】
【発明の属する技術分野】本発明は半導体装置及びその
搭載方法に係り、詳しくは無鉛半田材料を用いて半導体
装置を基板に搭載する際に、無鉛半田材料のリフロー温
度を上げても断線の少ない半導体装置及びその搭載方法
に関する。
【０００２】
【従来の技術】従来から半導体装置は半導体素子と端子
を金属ワイヤで配線する方法として超音波併用熱圧着ボ
ンディング法が主として用いられ、その後樹脂封止して
用いられている。
【０００３】図１は従来の半導体装置の製造工程の１例
として端子としてリードを用いた例を示す図である。ま
ず図１（ａ）に示すように金属ワイヤ２をキャピラリー
１に挿通し、その先端に電気トーチ３を対向させ金属ワ
イヤ２との間で放電させることにより、金属ワイヤ２の
先端を加熱、溶融してボール４を形成する。ついで図１
（ｂ）に示す様にキャピラリー１を下降させて該ボール
４を半導体素子６上のＡｌ電極５の上に押圧接合する。
この時半導体素子６はヒーターブロック（図示省略）で
加熱される為、上記ボール４は熱圧着され、圧着ボール
４′となる。次いで図１（ｃ）に示すようにキャピラリ
ー１は所定の軌跡を描いてリード８の上に移動し、下降
する。この時リードはヒータブロック（図示省略）で加
熱される為金属ワイヤ２′の軸方向側面がリード８上に
熱圧着される。次いで図１（ｄ）に示すようにクランパ
７は金属ワイヤ２をクンプしたまま上昇することによ
り、金属ワイヤ２が切断され配線が完了する。ここでフ
ァースト側接合点９は金属ワイヤ２がボールボンディン
グされ、セカンド側接合点１０は金属ワイヤ２が軸方向
側面で熱圧着して接合される所謂ステッチボンディング
され、セカンド側接合点１０で金属ワイヤ２が切断され
配線２′が形成される。
【０００４】次いで半導体素子６と配線された金属ワイ
ヤ２′とを封止する樹脂封止（図示省略）を行う。この
ようにして製造された半導体装置の断面図を図２に示
す。
【０００５】次いで図２に示す半導体装置１２は、封止
樹脂１１から露出したリード８を直角に折り曲げ、これ
を端子としてプリント基板のスルーホール（図示省略）
に接合して基板へ搭載される。ここで半導体装置１２の
リード８と基板のスルーホールの接合には半田材料を用
いてその溶融点以上の温度まで加熱して接合されてい
る。
【０００６】一方前述の半田材料として３７％Ｐｂ−Ｓ
ｎ組成（質量％）の共晶半田組成のものが共晶温度１８
３℃と低温で半田溶融が出来る長所を利用して用いられ
てきた。
【０００７】しかしながら、近年、廃棄された電子機器
から溶出する鉛による環境汚染が問題になっており、電
子機器製造においては、半田材料としてＰｂを含有しな
い所謂無鉛半田材料の利用が要求されている。
【０００８】
【発明が解決しようとする課題】前記半田材料への要求
に対して、電子機器に用いる無鉛半田材料としてＳｎ−
Ｃｕ系合金が代表的であり、これらにＮｉ、Ａｇ、Ｇｅ
等を添加したものが実用化されてきている。ここで、前
述の半導体装置のリードをプリント基板のスルーホール
へ接合する際の無鉛半田材料としてＳｎ−Ｃｕ系合金を
用いて接合したところ、図２に示す半導体装置１２の配
線２′に断線が発生するという問題が生じてきた。
【０００９】本発明は前述の点に鑑みてなされたもので
あり、半導体装置を基板に接合して搭載するに際して無
鉛半田材料としてＳｎ−Ｃｕ系合金を用いて接合しても
半導体装置を構成する配線の断線防止に有効な半導体装
置及び半導体装置の搭載方法を提供することを目的とす
る。
【００１０】
【課題を解決するための手段】本発明者等は、前述の問
題を鋭意検討の結果、半導体装置を基板に接合して搭載
する際に無鉛半田材料を用いると、図２に示す半導体装
置１２に於いて、断線箇所はリード８上面に前記金属ワ
イヤ１０の軸方向側面を接合したセカンド側接合点１０
であることを見い出した。そこで本発明は半導体装置を
基板に接合して搭載する際に無鉛半田材料を用いても、
次に述べる手段を講じることにより、セカンド側接合点
１０における断線を有効に防止することが出来るもので
ある。
【００１１】（１）半導体素子と端子とこれらを接続す
る金属ワイヤとを樹脂封止してなり、端子の一部は封止
樹脂の外部へ延在している半導体装置であって、金属ワ
イヤは端子上に形成されたバンプ上に金属ワイヤの軸方
向側面が接合された構造を有していることを特徴とする
半導体装置。
【００１２】（２）半導体素子と端子とこれらを接続す
る金属ワイヤとを樹脂封止してなり、端子の一部は封止
樹脂の外部へ延在している半導体装置を基板に接合する
際に、半導体装置の端子を無鉛半田材料を介して基板に
接合する半導体装置の搭載方法において、前記半導体装
置は端子上に形成されたバンプ上に金属ワイヤの軸方向
側面が接合された構造を有していることを特徴とする半
導体装置の搭載方法。
【００１３】（３）半導体装置の封止樹脂内には２個以
上の半導体素子が封止され、金属ワイヤが半導体素子ど
うしを接続する場合もあるが、そのような場合には金属
ワイヤは一方はボールボンディングし、他方は半導体素
子上にバンプを形成し、その上に金属ワイヤの軸方向側
面が接合された構造とすることが好ましい。
【００１４】（４）金属ワイヤの軸方向側面を接合する
ために端子あるいは半導体素子上に形成するバンプの材
質は金属ワイヤと同一材料であることが好ましい。同一
材料であれば、熱膨張係数が同じであり、また接合強度
が高いからである。従って、バンプを金属ワイヤと異な
る材料で構成してもよいが、金属ワイヤとの接合強度が
高いもの、熱膨張係数差が小さいものが好ましい。
【００１５】（５）無鉛半田の加熱温度は２５０〜２７
０℃が一般的であるが特に限定されない。
【００１６】
【発明の実施の形態】次に、本発明の実施の形態につい
て端子としてリードを用いた例を図３、図４を用いて説
明する。
【００１７】図３はリード８上にバンプ１４を形成する
工程図である。図３（ａ）に示すように金属ワイヤ２を
キャピラリー２に挿通し、その先端に電気トーチ３を対
向させ金属ワイヤ２との間で放電させる事により、金属
ワイヤ２の先端を加熱、溶融してボール４を形成する。
ついで図３（ｂ）に示す様にキャピラリー１を下降させ
て該ボール４をリード８上に押圧接合する。この時リー
ド８はヒーターブロック（図示省略）で加熱される為、
上記ボール４は熱圧着され、圧着ボール４′となる。次
いで図３（ｃ）に示すようにクランパ７は金属ワイヤ２
をクランプしたまま上昇することにより、金属ワイヤ２
が圧着ボール４′との付け根で切断され、リード８上に
バンプ１４が形成される。
【００１８】次に図４は本発明になる半導体装置を製造
する工程図の一部である。本発明工程である図４と従来
工程である図１の異なるところは、図４（ｄ）において
セカンド側接合点１０として金属ワイヤ２の軸方向側面
をリードに熱圧着して接合する所謂ステッチボンディン
グするに際して、リード８上にバンプ１４を形成してい
ることである。
【００１９】従来、金属ワイヤをボールボンディングす
る場合、半導体素子側は金属ワイヤの先端を加熱溶融し
てボールを形成し、それを半導体素子に押圧するので接
合強度が大きいが、金属ワイヤの他端側は加熱溶融する
と金属ワイヤが切れてボンディングできないので、図１
で説明したごとく金属ワイヤの軸方向側面を押圧するい
わゆるステッチボンディングを利用せざるを得ない。し
かし、このステッチボンディングの接合強度が小さいた
め、半導体装置の端子を無鉛半田を用いて基板に接続し
ようと２５０〜２７０℃位に加熱するとき、特に熱膨張
係数の差にもとづく熱応力によってステッチボンディン
グ部の接合が外れる問題があった。これに対し、本発明
では、端子等上に形成したバンプに金属ワイヤの軸方向
側面をバンプに接合する。
【００２０】図４を詳しく説明する。まず図４（ａ）に
示すように金属ワイヤ２をキャピラリー１に挿通し、そ
の先端に電気トーチ３を対向させ金属ワイヤ２との間で
放電させることにより、金属ワイヤ２の先端を加熱、溶
融してボール４を形成する。ついで図４（ｂ）に示す様
にキャピラリー１を下降させて該ボール４を半導体素子
６上のＡｌ電極５の上に押圧接合する。この時半導体素
子６はヒーターブロック（図示省略）で加熱される為、
上記ボール４は熱圧着され、圧着ボール４′となる。次
いで図４（ｃ）に示すようにキャピラリー１は所定の軌
跡を描いて、その上にバンプ１４を形成したリード８の
上に移動し、下降する。この時リードはヒーターブロッ
ク（図示省略）で加熱される為金属ワイヤ２′の軸方向
側面がリード８上のバンプ１４上に熱圧着される。次い
で図４（ｄ）に示すようにクランパ７は金属ワイヤ２を
クンプしたまま上昇することにより、金属ワイヤ２が切
断され配線が完了する。ここでファースト側接合点９は
金属ワイヤ２がボールボンディングされ、セカンド側接
合点１０は金属ワイヤ２が軸方向側面で熱圧着して接合
される所謂ステッチボンディングされ、セカンド側接合
点１０で金属ワイヤ２が切断され配線２′が形成され
る。
【００２１】次いで半導体素子６と配線された金属ワイ
ヤ２′とを封止する封止樹脂（図示省略）を行う。この
ようにして製造された本発明になる半導体装置の断面図
を図５に示す。次いで図５に示す半導体装置１３は、封
止樹脂１１から露出したリード８をプリント基板などの
基板に半田材料を介してこれを溶融（以下「リフロー」
という）し接合して搭載する。代表的な搭載方法は、リ
ード８を直角に折り曲げ、これを端子としてプリント基
板のスルーホール（図示省略）に接合して基板へ搭載す
る。このほかリード８を直角に折り曲げる事なく図５に
示す状態のまま、直接リード８を基板へ搭載することも
できる。
【００２２】本発明において端子とはワイヤボンディン
グに於いてセカンド側接合点としてステッチボンディン
グされる部材であり、代表例として図５に示すリード８
が例示出来る。この他半導体素子等の電極がセカンド側
接合点として用いられる時これも端子に含めるものであ
り、ｃｈｉｐ ｔｏ ｃｈｉｐと呼ばれる例を図６に示
す。
【００２３】先ず半導体素子６１の電極５１にバンプ１
４１を形成する。金属ワイヤ２′は、半導体素子６の電
極５上にファースト側接合点９としてボールボンディン
グされ、前記バンプ１４１の上にセカンド側接合点１０
としてステッチボンディングされる。
【００２４】次に半田材料として、Ｓｎ−Ｃｕ系無鉛半
田材料を用いて一般的には２５０〜２７０℃の温度で半
田材料をリフローして半導体装置１３のリード８と基板
を接合する。このように従来より高温で半田材料をリフ
ローしても、本発明になる半導体装置は図５に示す半導
体装置１２の配線２′の断線を防止出来る。
【００２５】従来の半田材料としては３７％Ｐｂ−６３
％Ｓｎ（質量％）の共晶半田組成のものが共晶温度１８
３℃である為、リフロー温度２１０〜２３０℃で用いら
れていた。無鉛半田材料として０．７％Ｃｕ−９９．３
％Ｓｎ（質量％）組成の共晶温度は２２７℃、３．５％
Ａｇ−９６．５％Ｓｎ（質量％）組成の共晶温度は２２
１℃である。この共晶温度と接合性能から０．７％Ｃｕ
−９９．３％Ｓｎをベースとした０．３〜１．０％Ｃｕ
−残部Ｓｎ（質量％）系合金又はこれにＮｉ、Ａｇ、Ｇ
ｅの少なくとも１種を０．１〜５％（質量％）含有した
ものが用いられる。最も好ましい組成は０．５％Ｃｕ−
３％Ａｇ−９６．５％Ｓｎ（質量％）である。この様な
無鉛半田材料を用いるとリフロー温度を２５０〜２７０
℃とすることが出来て、当該温度でリフローしても本発
明になる半導体装置は配線２′の断線を防止出来る。リ
フロー温度が２７０℃を超えると基板の耐熱性に問題が
生じてくる為、リフロー温度は、２５０〜２７０℃とす
ることが好ましい。
【００２６】本発明の半導体装置が断線防止に優れた効
果を有する最大の理由は、従来の半導体装置では金属ワ
イヤの軸方向側面を熱圧着するステッチボンディングと
いうワイヤを脆弱にする接合部において、金属ワイヤと
リードの材質が異なる為熱膨張による変位に差異が生
じ、ここにリフロー温度がより高温になると金属ワイヤ
が接合部で断線すると考えられる。図５における本発明
の半導体装置１３では、金属ワイヤ２′とバンプ１４は
同一組成のものを用いる為、熱膨張による変位の差異を
抑制出来ることがより高温でリフローしても断線防止に
有効であると考えられる。従ってセカンド側接合点がリ
ードに替えて半導体素子等の電極である場合にも当該電
極上に金属ワイヤと同一組成のバンプを形成することで
本発明の課題は達成出来る。又バンプは熱膨張に差異の
ないもので良いため、金属ワイヤと同一種類の厚めっき
等の方法でも良い。
【００２７】また、バンプの材質は必ずしも金属ワイヤ
と同一材料である必要はない。熱膨張時の応力が小さく
できる材料、また金属ワイヤとの接合強度が高い材料で
あれば使用可能である。要は、バンプを介することによ
り、材質的に及び／又は形状的に、断線を防止できる効
果があるものであればよい。
【００２８】本発明に用いる金属ワイヤとしては金属
（Ａｕ）、アルミ（Ａｌ）、銅（Ｃｕ）、白金（Ｐ
ｔ）、パラジウム（Ｐｄ）、銀（Ａｇ）及び金合金、ア
ルミ合金、銅合金、白金合金、パラジウム合金、銀合金
が用いられる。この中でも金合金が好ましく用いられ
る。
【００２９】図５に示す本発明の半導体装置１３におい
て配線される金属ワイヤ２′とバンプ１４は図３と図４
の工程を同一ワイヤを用いて連続した工程とすることが
好ましい為金属ワイヤ２′とバンプ１４は同一組成であ
る。又バンプ１４におけるワイヤ切り残りの形状は上方
に向かって残っても良いし、バンプ１４の上面に転倒さ
せて押しつけても良い。図３（ｃ）ではキャピラリー１
を接合位置のまま平面に移動させていない為、ワイヤ切
り残りの形状は上方に向かっている。図３（ｂ）の次に
キャピラリーを水平に移動した後、ワイヤを上方に引き
上げると、ワイヤ切り残りの形状はバンプ１４の上面に
転倒して押しつけた形状になる。本発明では、いずれの
バンプ形状でも使用出来るが、後者の方が好ましい。
【００３０】
【実施例】（実施例１）金属ワイヤとして直径３０μ
ｍ、組成が１０質量ppm Ｃａ、残部が金である金合金ワ
イヤ、リードとしてＡｇめっきを施した銅製リードフレ
ームを用いて図３の要領でリード上にバンプを形成し
た。次いで図４の要領でセカント接合点が前記バンプ上
になるようにして１００ピンの配線を行い樹脂封止して
図５に示す半導体装置を１０個作成した。
【００３１】該半導体装置を加熱条件２３０℃で、５分
間加熱した後、樹脂を硝酸を用いて除去して配線の断線
状況を金属顕微鏡で観察した。セカンド側接合点の断線
の数をカウントして、その結果を断線率として表１に示
す。 （実施例２〜４）（比較例１〜４） セカンド接合点がバンプ上とリード上の区分、半導体装
置の加熱条件を表１のようにしたこと以外は実施例１と
同様にして試験を行った。その試験条件と試験結果を表
１に示す。
【００３２】
【表１】
【００３３】（試験結果） （１）本発明の特徴である半導体装置の内部配線に於け
るセカンド側接合（ステッチボンディング）点をリード
上のバンプ上とした実施例１〜４のものは、半導体装置
を２３０〜２７０℃に加熱した場合においても、セカン
ド側断線率は０％であった。このことから、半導体装置
を基板に搭載する際、半田材料として無鉛半田材料を用
いて、リフロー温度を２５０〜２７０℃にしても半導体
装置を構成する配線の断線を防止出来るという優れた効
果を有することが判る。
【００３４】（２）セカンド側接合点がバンプを使用し
ないリードのまま、半導体装置を２３０℃に加熱した比
較例１のものは、セカンド側断線率は０％であった。こ
のことは、半導体装置を基板に搭載する際、半田材料と
して鉛系半田材料を用いることによって、リフロー温度
を低くすれば、半導体装置を構成する配線の断線を防止
出来るという従来技術の確認である。
【００３５】（３）セカンド側接合点がバンプを使用し
ないリードのまま、半導体装置を２５０〜２７０℃に加
熱した比較例２〜４のものは、セカンド側断線率は３４
〜８１％であった。このことは、セカンド側接合点がバ
ンプを使用しないリードのままの場合、半導体装置を基
板に搭載する際、半田材料として無鉛半田材料を用い
て、リフロー温度を２５０〜２７０℃にすると半導体装
置を構成する配線に断線が生じやすいことが判る。
【図面の簡単な説明】
【図１】従来の半導体装置のボールボンディング方法を
説明する図。
【図２】従来の半導体装置の構造を示す図。
【図３】本発明により端子側にバンプを形成する様子を
示す図。
【図４】本発明により図３に続いて半導体装置に金属ワ
イヤの接合を行う様子を示す図。
【図５】本発明による半導体装置の構造を示す図。
【図６】本発明による別の半導体装置の構造を示す図。
【符号の説明】
２′…金属ワイヤ ５…電極 ６…半導体素子 ８…端子（リード） ９…ファースト側接点 １０…セカンド側接点 １１…封止樹脂

Claims (2)

    【特許請求の範囲】
  1. 【請求項１】 半導体素子と端子とこれらを接続する金
    属ワイヤとを樹脂封止してなり、端子の一部は封止樹脂
    の外部へ延在している半導体装置であって、金属ワイヤ
    は端子上に形成されたバンプ上に金属ワイヤの軸方向側
    面が接合された構造を有していることを特徴とする半導
    体装置。
  2. 【請求項２】 半導体素子と端子とこれらを接続する金
    属ワイヤとを樹脂封止してなり、端子の一部は封止樹脂
    の外部へ延在している半導体装置を基板に接合する際
    に、半導体装置の端子を無鉛半田材料を介して基板に接
    合する半導体装置の搭載方法において、前記半導体装置
    は端子上に形成されたバンプ上に金属ワイヤの軸方向側
    面が接合された構造を有していることを特徴とする半導
    体装置の搭載方法。
JP2002112340A 2002-04-15 2002-04-15 半導体装置及びその搭載方法 Pending JP2003309142A (ja)

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Publications (1)

Publication Number Publication Date
JP2003309142A true JP2003309142A (ja) 2003-10-31

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011102547A1 (ja) * 2010-02-19 2011-08-25 新日本製鐵株式会社 電力用半導体素子
US8604627B2 (en) 2005-04-15 2013-12-10 Rohm Co., Ltd. Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8604627B2 (en) 2005-04-15 2013-12-10 Rohm Co., Ltd. Semiconductor device
WO2011102547A1 (ja) * 2010-02-19 2011-08-25 新日本製鐵株式会社 電力用半導体素子
JP2011171529A (ja) * 2010-02-19 2011-09-01 Nippon Steel Corp 電力用半導体素子
US8901569B2 (en) 2010-02-19 2014-12-02 Nippon Steel & Sumitomo Metal Corporation Power semiconductor device

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