JPS59150460A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

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Publication number
JPS59150460A
JPS59150460A JP58013981A JP1398183A JPS59150460A JP S59150460 A JPS59150460 A JP S59150460A JP 58013981 A JP58013981 A JP 58013981A JP 1398183 A JP1398183 A JP 1398183A JP S59150460 A JPS59150460 A JP S59150460A
Authority
JP
Japan
Prior art keywords
bonding
semiconductor chip
wire
semiconductor device
bonding wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58013981A
Other languages
English (en)
Inventor
Masahide Kudo
工藤　眞秀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
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Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58013981A priority Critical patent/JPS59150460A/ja
Publication of JPS59150460A publication Critical patent/JPS59150460A/ja
Pending legal-status Critical Current

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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
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    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は半導体装置の製造方法に関し、特にワイヤデン
ディング部分の耐湿性を向上し得る製造方法に係る。
〔発明の技術的背景〕
ＩＣあるいはＬＳＩ等の半導体装置を製造する場合、内
部回路が形成された半導体チップを外囲器にノＪ？ツケ
ージングするため、次のような組立工程が行なわれる。
即ち、甘ず第１図に示すようにリードフレームのアイラ
ンド部１上に半導体チップ２をマウントし、更に半導体
チップ２に形成されているアルミニウム製のデンディン
グ・ぐラド４・・・とアイランド部１の周囲に配設され
たり−ド３・・・との間をＡｕ、Ａｔ等のボンディング
ワイヤ５を介して接続（ワイヤボンディング）する。続
いて、エポキシ樹脂等の熱硬（１樹脂のトランスファー
モールドを行ない、第２図に示すように所要部分をモー
ルド樹脂層６で樹脂封止する。
〔背景技術の問題点〕
ところで、上記のようにして製造された半導体装置では
、その後の４湿性試験においてデンディングワイヤ５と
ゾンデイングツぞラド４との接続部が下記のようにして
腐蝕し、このためボンディング不良が発生するといった
問題があった。
第３図は金製のボンディングワイヤ５とアルミニウム製
のビンディングパッド４との接続部を拡大して示す断面
図であり、図中７は半導体チップ２の表面を畳うＰＳＧ
（燐硅酸ガラス）笠のパッシベーション膜である。ボン
ディングワイヤ５は熱圧着によりゾンデイングツやラド
４上に接合されるため、その先端部がネイルヘッド状に
圧壊されている。そして、両者の接合部分にはＡｔとＡ
ｕの共晶層５′が形成され、該共晶層５′によって両者
の接合が達成されている１、この共晶層５′はＡｕＡｔ
２　、　ＡｕＡｔ、　Ａｕ２Ａｔ、　Ａｕ４Ａｔ等から
なっている１、このように、デンディング部分ではがン
デイング／そラド４のＡｔや共晶層５′のＡｔ成分が露
出している。このため１組立工程で混入するゴミやモー
ルド樹脂層６に含まれるＣｔ−イオン、あるいは耐湿性
試験で外部から侵入するＣｔ−イオン等のハロゲンイオ
ンがポンディング／やラド４や共晶層５′のＡｔ成分に
作用して腐蝕を生じ、接続不良を生じるものである。
Ａｔ製のボンディングワイヤ５を用いた場合にも同様の
腐蝕を生じ、これによって接続不良が発生ずるものであ
る。。
〔発明の目的〕
本発明は上記事情に鑑みて々でれたもので、ポンプイン
グツやラドとデンディングワイヤの接続部における腐蝕
を防止でき、もって１ｌｉｉｉ洋性を向上した信頼性の
高い半導体装し１を得ることができる製造方法を提供す
るものでを）る３゜〔発明の桐５袈〕 本発明による半導体装置の製造方法は、半導体チップを
リードフレーム上ｅこマウントし１、更にワイヤボンデ
ィング後行なった後、樹脂封止を行なう前に、前記半導
体チップとビンディングワイヤとの接続部表面をＤう絶
縁膜な形成することを特徴とするものである。
本発明において、半導体テッグとボンディングワイヤと
の接合部表面を拶う絶り膜を形成する方法としては、ワ
イヤボンディング後に水蒸気処理を行々うことにより所
要表面に酸化膜を形成してもよく、１だポリイミドイ創
脂やエポキシ樹脂等の耐湿性樹脂をコーティングしても
よい。
上記本発明によれば、ボンディングワイヤと半導体チッ
プとの接合部分が絶縁膜で保護されるため、この部分で
アルミニウム成分がハロゲンイオン等の作用を受けて腐
蝕するのを防止できる。従って、耐湿性の高い半導体装
置を製造することができる。
〔発明の実施例〕
以下に本発明の一実施例を説明する。
まず、従来の製造方法と同様、第１図に示すように半導
体チツｆ２をリードフレームのアイランド部１上にマウ
ントし、ビンディングツやラド４とり−ド３との間を金
製のボンディングワイヤ４で接続する。続いて、この状
態で水蒸気処理を行ない、第４図に示すようにポンディ
ングパッド４およびデンディングワイヤ５の接合部表面
をＩう酸化膜８を形成する。との場合、デンディングパ
ラ）４４上に形成された酸化膜８れた酸化膜はその成分
の酸化物、即ちＡｕＡｔ２０Ｘ　＋ＡｕＡｔ０ｙ、　Ａ
ｔ＋４ＡｔＯ２、Ａｕ４ＡｔＯｋからなる。なお、Ａｕ
製のボンディングワイヤ５は水蒸気処理によつ−Ｃも酸
化されない。その後は従来の製造方法と同様に、樹脂モ
ールド層６で封止して半導体装置を得る。
上記実施例により製造された半導体装置では。
デンディングワイヤ゛５とぎンデイングパツド４との接
合部の表面が酸化膜８で被砕されているため、内部のＡ
ｌ成分はＣｔ−等のノ・ログンイオンによる腐蝕作用か
ら保静される。従って、耐湿性試験においても腐蝕によ
る接続不良の発性を防止するととができる。
〔発明の効果〕
以上詳述し／ζように、本発明によればビンディングパ
ッドとデンディングワイヤとの接続部における腐蝕を防
止し、もって耐湿性を向上した信頼性の高い半導体装置
を製造できるといった顕著な効果が得られるものである
。
第１図は半導体装置の製造工程におけるワイヤデンディ
ングを説明するだめの斜視図、第２図は樹脂封止された
半導体製値を示す断面図。
第３図はボンディングワイヤとポンディングパッドとの
接続部分を示す拡大断面図、第４図は本発明の一実施例
になる半導体１Ｇ−ｆｒの製造方法を説明するだめの第
３図同様の拡大断面１シ１である。
１・・・アイランド部、２・・・半導体チップ、３・・
・ＩＪ−）”、４・・・ポンディングパッド、５・・ボ
ンディングワイヤ、６・・・イ克」旨モールドＪＭ％　
７・−・ノぐツ７ぺ・−ジョン膜、８・・・酸化膜。
出願入代Ｕ＋ｊ人　弁理士　鈴　江　ｉ（彦第４図

Claims (2)

    【特許請求の範囲】
  1. （１）半導体チップをリードフレーム上にマウントし、
    更にワイヤボンディングを行なった後、樹脂封止を行な
    う前に、前記半導体チップとデンディングワイヤとの接
    続部表面を紡う絶縁膜を形成することを特徴とする半導
    体装置の製造方法１、
  2. （２）水蒸気処理により前記絶縁膜を形成することを特
    徴とする特許請求の範囲第（１）項記載の半導体装置の
    製造方法。
JP58013981A 1983-01-31 1983-01-31 半導体装置の製造方法 Pending JPS59150460A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58013981A JPS59150460A (ja) 1983-01-31 1983-01-31 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58013981A JPS59150460A (ja) 1983-01-31 1983-01-31 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
JPS59150460A true JPS59150460A (ja) 1984-08-28

Family

ID=11848397

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JPS59150460A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63128634A (ja) * 1986-11-18 1988-06-01 Nec Corp 半導体装置の製造方法
US6383909B1 (en) 2000-05-16 2002-05-07 Nec Corporation Semiconductor device with a corrosion resistant bonding pad and manufacturing method therefor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63128634A (ja) * 1986-11-18 1988-06-01 Nec Corp 半導体装置の製造方法
JPH0546978B2 (ja) * 1986-11-18 1993-07-15 Nippon Electric Co
US6383909B1 (en) 2000-05-16 2002-05-07 Nec Corporation Semiconductor device with a corrosion resistant bonding pad and manufacturing method therefor

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