JPS60160627A - 半導体集積回路装置 - Google Patents

半導体集積回路装置

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Publication number
JPS60160627A
JPS60160627A JP59016632A JP1663284A JPS60160627A JP S60160627 A JPS60160627 A JP S60160627A JP 59016632 A JP59016632 A JP 59016632A JP 1663284 A JP1663284 A JP 1663284A JP S60160627 A JPS60160627 A JP S60160627A
Authority
JP
Japan
Prior art keywords
semiconductor integrated
integrated circuit
moisture
bonding
pads
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59016632A
Other languages
English (en)
Inventor
Kazuo Nakamura
和夫 中村
Takeshi Nakamura
健 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
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Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59016632A priority Critical patent/JPS60160627A/ja
Publication of JPS60160627A publication Critical patent/JPS60160627A/ja
Pending legal-status Critical Current

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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 （司　発明の技術分野 本発明は半導体集積回路（ＩＣ）、特に接続線がボンデ
ングされるパッドの耐湿性を向上することが可能な構造
に関する。
（ｂｌ　技術の背景 近年、半導体集積回路が広範に利用され、高信頼性が要
求されているが、比較的多い不良として半導体集積回路
の接続部における不良があり、これら不良の原因の一つ
である半導体集積回路のパッドと接続線との接続部の腐
食による断線不良の減少が要望されている。
（Ｃ１従来技術と問題点 第１図は従来の半導体集積回路のパッド部に接、綾線を
ボンデングした状態のｌ断面図を示している。
１は半導体集積回路のチップ、２はアルミニューム（Ａ
Ｉ）で形成された半導体集積回路のバンド、３は接続線
として使用される金（Ａｕ）線、４は熱圧着で接続され
た部分、５は半導体集積回路のチップの表面を保護する
ために被覆される硝子を主成分とする保護膜（Ｃ−ＰＳ
Ｇ）　、６は同様の目的でなされる窒化シリコン（Ｓ　
ｉ　Ｎ）のペースト膜であって、これらの保護膜により
半導体集積回路に耐湿性を持たせて、長時間にわたる動
作機能を維持して信頼性を高めている。
然しなから、第１図に示すように、半導体集積回路のパ
ッドの部分は、金線がボンデングされるために、このよ
うな保護膜を形成することは困難であることから、何等
の保護がなされないままになっている部分７がある。
そのため半導体集積回路のチップに、接続線がボンデン
グがなされて、最終的にチップがプラスチックでモール
ドされた後になって、外部から浸入する微少な湿度によ
る水の為にアルミニュームと水が反応し、結果的にアル
ミニュームが腐食することになるとか、叉半導体集積回
路を取りつける半田付けのフラフクスの塩素（ＣＩ）等
が浸入してアルミニュームを腐食して、バンド部とアル
ミニューム線が剥離してしまい断線することになること
が多かった。
半導体集積回路では、チップをパッケージする方法とし
て上記のプラスチックでモールドする他に、セラミック
を使用してパッケージする方法もあるが、この場合はチ
・７プを収納したセラミックに金属の蓋を半田で封着す
るため比較的湿度の影響が少なくて問題が少ないが、プ
ラスチックでモールドされる場合には耐湿性が極めて重
要な課題である。
ｆｄ＋　発明の目的 本発明は上記従来の欠点に鑑み、半導体集積回路のパッ
ドと接続線の接続部が、湿度によって腐食されることが
ない高信頼性のパッドと接続線とのボンデング後の腐食
防止を計るための構造を提供することを目的とする。
＋Ｑｌ　発明の構成 この目的は、本発明によれば、半導体集積回路チップ上
のワイヤボンデングがなされたバンド部を、耐湿性樹脂
で被覆したことを特徴とする半導体集積回路装置を提供
することによって達成できる。
（ｆｌ　発明の実施例 以下本発明の実施例を図面によって説明する。
第２図は本発明の半導体集積回路のパッドに、金線をボ
ンデングすると共に、同時にバットに保護膜を生成する
方法を説明する図である。
本発明の詳細な説明すると、ｌは半導体集積回路のチッ
プ、２は半導体集積回路のバンド、３は接続線である金
線、４は熱圧着部、５は半導体集積回路のチップの表面
を保護するために被覆された硝子を主成分とする保護膜
（Ｃ−ＰＳＧ）　、６は同様の目的でなされる窒化シリ
コン（Ｓ　ｉ　Ｎ）のペースト膜、８はボンデング装置
のキャピラリー、９は耐湿性樹脂を適量だけ射出する射
出器である。
半導体集積回路のバンド部にキャピラリーによって金線
が３２０℃乃至３５０℃の温度で熱圧着がなされるが、
このボンデングの直後に、露出している半導体集積回路
のバンド部に耐湿性の膜を形成する方法を考慮しである
。
このボンデングの作動サイクルは、０．５秒から１秒で
あってかなり高速であるが、このボングーの作動サイク
ルに同期して、耐湿性樹脂の射出器が一定量の、耐湿性
樹脂（例えばシリコン樹脂のペーストとか、液状シリカ
ガラス）を定量して、その分量だけを半導体集積回路の
一個のパッド部に射出するようにする。
第３図は本発明によって、耐湿性樹脂で半導体集積回路
のバンド部が充填された断面の模式図であって、耐湿性
樹脂１０がパッドを完全に被覆している。
このように充填された耐湿性樹脂は半一４ｉ集積回路の
バンドを被覆して、プラスチック、モールドを介して浸
入する外部からの湿度を遮断するため、アルミニューム
が腐食することなく保護され、長時間にわたってバンド
部の接続を保証することができる。
（梢　発明の効果 以上詳細に説明したように、本発明の半導体集積回路の
パッドの表面にボンデングが完了した直後に保護膜を形
成することによって、高信頼性の半導体集積回路を製造
することができ、この半導体集積回路を使用することで
高信頼度の装置が供しうるという効果大なるものがある
。
【図面の簡単な説明】
第１図は従来の半導体集積回路の断面図、第２図は本発
明の半導体集積回路の製造方法の説明図、第３図は本発
明の耐湿性樹脂を充填した半導体集積回路のパッドの断
面図である。 図において、■は半導体集積回路のチ・ノブ、２はバン
ド、３は金ワイヤ−，４は熱圧着部、５はＣ−ＰＳＧ　
、６は窒化シリコン、７はパッドの露出部、８はキャピ
ラリー、９は耐湿性樹脂の射出装置、１０は耐湿性樹脂
である。 第１図

Claims (1)

    【特許請求の範囲】
  1. 半導体集積回路チップ上のワイヤボンデングがなされた
    パッド部を、耐湿性樹脂で被覆したことを特徴とする半
    導体集積回路装置。
JP59016632A 1984-01-31 1984-01-31 半導体集積回路装置 Pending JPS60160627A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59016632A JPS60160627A (ja) 1984-01-31 1984-01-31 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59016632A JPS60160627A (ja) 1984-01-31 1984-01-31 半導体集積回路装置

Publications (1)

Publication Number Publication Date
JPS60160627A true JPS60160627A (ja) 1985-08-22

Family

ID=11921735

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59016632A Pending JPS60160627A (ja) 1984-01-31 1984-01-31 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS60160627A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5434105A (en) * 1994-03-04 1995-07-18 National Semiconductor Corporation Process for attaching a lead frame to a heat sink using a glob-top encapsulation
JP2012181198A (ja) * 2012-04-05 2012-09-20 Dainippon Printing Co Ltd センサデバイスの製造方法及びセンサデバイス
JP2015092193A (ja) * 2015-02-10 2015-05-14 大日本印刷株式会社 センサデバイスの製造方法及びセンサデバイス
US9209319B2 (en) 2010-06-30 2015-12-08 Dai Nippon Printing Co., Ltd Sensor device manufacturing method and sensor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5434105A (en) * 1994-03-04 1995-07-18 National Semiconductor Corporation Process for attaching a lead frame to a heat sink using a glob-top encapsulation
US5581119A (en) * 1994-03-04 1996-12-03 National Semiconductor Corporation IC having heat spreader attached by glob-topping
US9209319B2 (en) 2010-06-30 2015-12-08 Dai Nippon Printing Co., Ltd Sensor device manufacturing method and sensor device
JP2012181198A (ja) * 2012-04-05 2012-09-20 Dainippon Printing Co Ltd センサデバイスの製造方法及びセンサデバイス
JP2015092193A (ja) * 2015-02-10 2015-05-14 大日本印刷株式会社 センサデバイスの製造方法及びセンサデバイス

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