JPH02125454A - 樹脂封止型半導体装置 - Google Patents
樹脂封止型半導体装置Info
- Publication number
- JPH02125454A JPH02125454A JP63278849A JP27884988A JPH02125454A JP H02125454 A JPH02125454 A JP H02125454A JP 63278849 A JP63278849 A JP 63278849A JP 27884988 A JP27884988 A JP 27884988A JP H02125454 A JPH02125454 A JP H02125454A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- groove
- lead
- wirings
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 229920005989 resin Polymers 0.000 claims abstract description 26
- 239000011347 resin Substances 0.000 claims abstract description 26
- 238000007789 sealing Methods 0.000 claims abstract description 18
- 239000004840 adhesive resin Substances 0.000 claims abstract description 6
- 229920006223 adhesive resin Polymers 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 239000003822 epoxy resin Substances 0.000 abstract description 5
- 229920000647 polyepoxide Polymers 0.000 abstract description 5
- 238000005219 brazing Methods 0.000 abstract description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- 229910052709 silver Inorganic materials 0.000 abstract description 3
- 239000004332 silver Substances 0.000 abstract description 3
- 238000005530 etching Methods 0.000 abstract description 2
- 229920005992 thermoplastic resin Polymers 0.000 abstract description 2
- 229920001187 thermosetting polymer Polymers 0.000 abstract description 2
- 229910001111 Fine metal Inorganic materials 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 2
- 239000006082 mold release agent Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000088 plastic resin Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4899—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids
- H01L2224/48996—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids being formed on an item to be connected not being a semiconductor or solid-state body
- H01L2224/48997—Reinforcing structures
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/85951—Forming additional members, e.g. for reinforcing
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Wire Bonding (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
め要約のデータは記録されません。
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は樹脂封止型半導体装置に関する。
従来、樹脂封止型半導体装置は第2図に示すように、銀
ペースト等のろう材6で半導体素子2をアイランド1上
に固着し、半導体素子2上のパッドとり−ド3の先端部
を金線などの金属細線4で電気的に接続した後、半導体
素子2と金属細線4とリード3の先端部を封止樹脂5に
より封止した構造となっていた。
ペースト等のろう材6で半導体素子2をアイランド1上
に固着し、半導体素子2上のパッドとり−ド3の先端部
を金線などの金属細線4で電気的に接続した後、半導体
素子2と金属細線4とリード3の先端部を封止樹脂5に
より封止した構造となっていた。
上述した従来の樹脂封止型半導体装置は、封止樹脂とリ
ードフレームとの熱膨張率が異なっている等の理由によ
り、相互の界面の密着が悪いことが知られている。
ードフレームとの熱膨張率が異なっている等の理由によ
り、相互の界面の密着が悪いことが知られている。
近年、半導体装置を配線基板に実装する方法として、赤
外線等を用いる気相はんだ付け(VPS)法が用いられ
ているが、その際に半導体装置が被る急激な熱ストレス
や封止樹脂とリードフレームとの熱膨張の違い等によっ
て、封止樹脂とリードフレームの界面が剥離すると共に
、金属細線とリードとの接合部にクラックが発生して電
気特性不良をひきおこし、樹脂封止型半導体装置の歩留
り及び信頼性を低下させるという欠点がある。
外線等を用いる気相はんだ付け(VPS)法が用いられ
ているが、その際に半導体装置が被る急激な熱ストレス
や封止樹脂とリードフレームとの熱膨張の違い等によっ
て、封止樹脂とリードフレームの界面が剥離すると共に
、金属細線とリードとの接合部にクラックが発生して電
気特性不良をひきおこし、樹脂封止型半導体装置の歩留
り及び信頼性を低下させるという欠点がある。
本発明の樹脂封止型半導体装置は、アイランドに固着さ
れた半導体素子と、先端部に溝が形成されたリードと、
前記半導体素子のパッドと前記リードの溝部とに接合さ
れた金属細線と、金属細線が接合された前記リードの講
中に設けられた密着性樹脂と、前記半導体素子と金属細
線とリードの先端部とを封止する封止樹脂とを含んで構
成される。
れた半導体素子と、先端部に溝が形成されたリードと、
前記半導体素子のパッドと前記リードの溝部とに接合さ
れた金属細線と、金属細線が接合された前記リードの講
中に設けられた密着性樹脂と、前記半導体素子と金属細
線とリードの先端部とを封止する封止樹脂とを含んで構
成される。
次に、本発明の実施例について図面を参照して説明する
。
。
第1図は本発明の一実施例の断面図である。
第1図において樹脂封止型半導体装置は、銀ペースト等
のろう材6によりアイランド1に固着された半導体素子
2と、エツチングにより先端に溝8が形成されたリード
3と、半導体素子2のパッド(図示せず)とり−ド3の
渭8の底面に電気的に接合された金属細線4と、この金
属細線4が接合されな溝8中に設けられたエポキシ樹脂
やシリコン樹脂等からなる密着性樹脂9と、半導体素子
2と金属細線4とリード3の先端部を封止する封止樹脂
5とから主に構成されている。尚7はり−ド3とアイラ
ンド1を固着する絶縁ペーストである。
のろう材6によりアイランド1に固着された半導体素子
2と、エツチングにより先端に溝8が形成されたリード
3と、半導体素子2のパッド(図示せず)とり−ド3の
渭8の底面に電気的に接合された金属細線4と、この金
属細線4が接合されな溝8中に設けられたエポキシ樹脂
やシリコン樹脂等からなる密着性樹脂9と、半導体素子
2と金属細線4とリード3の先端部を封止する封止樹脂
5とから主に構成されている。尚7はり−ド3とアイラ
ンド1を固着する絶縁ペーストである。
封止樹脂5としてはエポキシ樹脂等が用いられるが、ワ
ックス等の離型剤が含まれているため密着性は低下する
。従って密着性樹脂9としては離型剤を含まないエポキ
シ樹脂等であればよく熱硬化性樹脂でも熱可塑性樹脂で
あってもよい。
ックス等の離型剤が含まれているため密着性は低下する
。従って密着性樹脂9としては離型剤を含まないエポキ
シ樹脂等であればよく熱硬化性樹脂でも熱可塑性樹脂で
あってもよい。
このように本実施例によれば、金属細線4が接合された
リード3の71It8を密着性の良い樹脂で埋めること
により、金属細線4とリード3との接合が完全となるた
め、接合部のクラックの発生による電気的特性不良はな
くなる。
リード3の71It8を密着性の良い樹脂で埋めること
により、金属細線4とリード3との接合が完全となるた
め、接合部のクラックの発生による電気的特性不良はな
くなる。
尚、密着性樹脂9は溝8を完全に埋める必要はなく、金
属細線4の接合部を覆う程度でよい。この場合、溝8の
側壁が封止樹脂5の剥離を防止するストッパとなる。
属細線4の接合部を覆う程度でよい。この場合、溝8の
側壁が封止樹脂5の剥離を防止するストッパとなる。
以上説明したように本発明は、リードの先端部に形成さ
れた溝部に金属細線を接合し、かつこの溝がリードと密
着のよい樹脂で埋められていることにより、下記のよう
な効果が得られ、歩留り及び信頼性の高い樹脂封止型半
導体装置が得られる。
れた溝部に金属細線を接合し、かつこの溝がリードと密
着のよい樹脂で埋められていることにより、下記のよう
な効果が得られ、歩留り及び信頼性の高い樹脂封止型半
導体装置が得られる。
(1)リードと金属細線の接合部がリード先端に設けら
れた溝部にあるため、接合部の周辺に存在する封止樹脂
の量を少なくすることが可能となり、封止樹脂に起因す
る金属細線への応力を低減きできる。
れた溝部にあるため、接合部の周辺に存在する封止樹脂
の量を少なくすることが可能となり、封止樹脂に起因す
る金属細線への応力を低減きできる。
(2)リードと金属細線の接合部がリードと密着性のよ
い樹脂で覆われているため、封止樹脂の応力による金属
細線の切れや剥離を防止できる。
い樹脂で覆われているため、封止樹脂の応力による金属
細線の切れや剥離を防止できる。
第1図は本発明の一実施例の断面図、第2図は従来の樹
脂封止型半導体装置の一例の断面図である。 1・・・アイランド、2・・・半導体素子、3・・・リ
ード、4・・・金属細線、5・・・封止樹脂、6・・・
ろう材、7・・・絶縁ペースト、8・・・溝、9・・・
密着性樹脂。
脂封止型半導体装置の一例の断面図である。 1・・・アイランド、2・・・半導体素子、3・・・リ
ード、4・・・金属細線、5・・・封止樹脂、6・・・
ろう材、7・・・絶縁ペースト、8・・・溝、9・・・
密着性樹脂。
Claims (1)
- アイランドに固着された半導体素子と、先端部に溝が形
成されたリードと、前記半導体素子のパッドと前記リー
ドの溝部とに接合された金属細線と、金属細線が接合さ
れた前記リードの講中に設けられた密着性樹脂と、前記
半導体素子と金属細線とリードの先端部とを封止する封
止樹脂とを含むことを特徴とする樹脂封止型半導体装置
。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63278849A JPH02125454A (ja) | 1988-11-02 | 1988-11-02 | 樹脂封止型半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63278849A JPH02125454A (ja) | 1988-11-02 | 1988-11-02 | 樹脂封止型半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02125454A true JPH02125454A (ja) | 1990-05-14 |
Family
ID=17603001
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63278849A Pending JPH02125454A (ja) | 1988-11-02 | 1988-11-02 | 樹脂封止型半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02125454A (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0730021A (ja) * | 1993-07-09 | 1995-01-31 | Goto Seisakusho:Kk | 半導体装置用ヒートシンク及びその製造方法 |
KR970069610A (ko) * | 1996-04-03 | 1997-11-07 | 리차드 엔, 제이콥슨 | 연신 스트립 |
US6037652A (en) * | 1997-05-29 | 2000-03-14 | Nec Corporation | Lead frame with each lead having a peel generation preventing means and a semiconductor device using same |
US6097083A (en) * | 1996-04-10 | 2000-08-01 | Oki Electric Industry Co., Ltd. | Semiconductor device which is crack resistant |
KR100269219B1 (ko) * | 1996-02-28 | 2000-10-16 | 이중구 | 반도체 리드프레임 및 패키지 방법 |
JP2008010740A (ja) * | 2006-06-30 | 2008-01-17 | Stanley Electric Co Ltd | 光半導体装置 |
JP2011505689A (ja) * | 2007-12-03 | 2011-02-24 | ソウル セミコンダクター カンパニー リミテッド | スリム型ledパッケージ |
WO2016016970A1 (ja) * | 2014-07-30 | 2016-02-04 | 株式会社日立製作所 | 半導体装置、半導体装置の製造方法および電力変換装置 |
-
1988
- 1988-11-02 JP JP63278849A patent/JPH02125454A/ja active Pending
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0730021A (ja) * | 1993-07-09 | 1995-01-31 | Goto Seisakusho:Kk | 半導体装置用ヒートシンク及びその製造方法 |
JP2521230B2 (ja) * | 1993-07-09 | 1996-08-07 | 株式会社後藤製作所 | 半導体装置用ヒ―トシンク及びその製造方法 |
KR100269219B1 (ko) * | 1996-02-28 | 2000-10-16 | 이중구 | 반도체 리드프레임 및 패키지 방법 |
KR970069610A (ko) * | 1996-04-03 | 1997-11-07 | 리차드 엔, 제이콥슨 | 연신 스트립 |
US6097083A (en) * | 1996-04-10 | 2000-08-01 | Oki Electric Industry Co., Ltd. | Semiconductor device which is crack resistant |
US6037652A (en) * | 1997-05-29 | 2000-03-14 | Nec Corporation | Lead frame with each lead having a peel generation preventing means and a semiconductor device using same |
JP2008010740A (ja) * | 2006-06-30 | 2008-01-17 | Stanley Electric Co Ltd | 光半導体装置 |
US8659050B2 (en) | 2007-12-03 | 2014-02-25 | Seoul Semiconductor Co., Ltd. | Slim LED package |
JP2011505689A (ja) * | 2007-12-03 | 2011-02-24 | ソウル セミコンダクター カンパニー リミテッド | スリム型ledパッケージ |
US8963196B2 (en) | 2007-12-03 | 2015-02-24 | Seoul Semiconductor Co., Ltd. | Slim LED package |
US9412913B2 (en) | 2007-12-03 | 2016-08-09 | Seoul Semiconductor Co., Ltd. | Slim LED package |
US9530942B2 (en) | 2007-12-03 | 2016-12-27 | Seoul Semiconductor Co., Ltd. | Slim LED package |
US9899573B2 (en) | 2007-12-03 | 2018-02-20 | Seoul Semiconductor Co., Ltd. | Slim LED package |
EP2218116B1 (en) * | 2007-12-03 | 2019-01-09 | Seoul Semiconductor Co., Ltd. | Slim led package |
WO2016016970A1 (ja) * | 2014-07-30 | 2016-02-04 | 株式会社日立製作所 | 半導体装置、半導体装置の製造方法および電力変換装置 |
JPWO2016016970A1 (ja) * | 2014-07-30 | 2017-04-27 | 株式会社日立製作所 | 半導体装置、半導体装置の製造方法および電力変換装置 |
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