JP6258538B1 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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JP6258538B1
JP6258538B1 JP2017048518A JP2017048518A JP6258538B1 JP 6258538 B1 JP6258538 B1 JP 6258538B1 JP 2017048518 A JP2017048518 A JP 2017048518A JP 2017048518 A JP2017048518 A JP 2017048518A JP 6258538 B1 JP6258538 B1 JP 6258538B1
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bonding
semiconductor chip
semiconductor device
sealing resin
bonding wire
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JP2018152492A (ja
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重信 関根
重信 関根
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有限会社 ナプラ
有限会社 ナプラ
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Priority to CN201810116107.0A priority patent/CN108573935B/zh
Priority to US15/906,099 priority patent/US10468376B2/en
Publication of JP2018152492A publication Critical patent/JP2018152492A/ja
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Abstract

【課題】ボンディングワイヤと封止樹脂との密着性を高め、両者間の剥離を防止するとともに、セカンドボンディングにおけるボンディングワイヤおよびリード端子間の接合強度が改善された半導体装置を提供する。
【解決手段】本発明の半導体装置101は、半導体チップ2と、半導体チップ2に設けられたボンディングパッド211と、半導体チップ2の周囲に配置された複数のリード端子50と、半導体チップ2と複数のリード端子50とを電気的に接続する複数のボンディングワイヤ6と、半導体チップ2およびボンディングワイヤ6を封止する封止樹脂11とを含み、ボンディングワイヤ6と封止樹脂11との界面には、絶縁性材料が介在し、絶縁性材料は、nmサイズの絶縁性微粒子と非晶質シリカを含有する。
【選択図】図1

Description

本発明は、半導体装置およびその製造方法に関する。
図1は、一般的な半導体装置を説明するための模式的な断面図である。
半導体装置101は、半導体チップ2と、半導体チップ2に設けられたボンディングパッド211と、半導体チップ2の周囲に配置された複数のリード端子50と、半導体チップ2とリード端子50とを電気的に接続する複数のボンディングワイヤ6と、これらを封止する封止樹脂11とを有してなる。半導体装置101の平面サイズは例えば4mm□程度であり、厚さは例えば1mm以下である。
さらに詳しく説明する。
リードフレーム4は、底面視で半導体装置101の中央部に配置されたダイパッド40と、ダイパッド40を取り囲むようにその周囲に間隔を空けて配置された複数のリード端子50とを含み、ダイパッド40の上面41とリード端子50の上面51とが同一平面に形成されている。リードフレーム4は、例えば200μm程度のCuやFe−Ni合金薄板からなり、打ち抜き加工やエッチング等により形成される。
半導体チップ2は、ボンディングパッド211が形成された表面21を上方に向けた姿勢で、その裏面22が接合材3を介してダイパッド40に接合されている。
ボンディングパッド211には、ボンディングワイヤ6の一端が接合されている。各ボンディングワイヤ6の他端は、リード端子50の上面51に接合されている。これにより、半導体チップ2は、ボンディングワイヤ6を介して、リード端子50と電気的に接続されている。ボンディングワイヤ6の長さは、ボンディングパッド211とリード端子50との距離に応じた長さであり、電極パッド211とリード端子50との距離は、例えば500μm〜800μmである。
ボンディングワイヤ6の形成は、ボールボンディング法等の公知の方法により行うことができる。まず、ワイヤボンダのキャピラリに保持されたボンディングワイヤ6の先端部に電流を印加することにより、その先端部にFAB(Free Air Ball)を形成する。次にキャピラリを降下させ、FABをボンディングパッド211に押し付けて超音波を付与すると、FABが変形してボンディングパッド211上に鏡餅形状の第1接合部が形成され、ファーストボンディングが達成される。続いて、ボンディングワイヤ6を半導体チップ2の周縁から離れる方向に、キャピラリを移動させ、キャピラリに保持されたワイヤマージンをリード端子50の上面51に押し付け、超音波を付与することにより引きちぎり、リード端子50上に側面視楔状の第2接合部が形成され、セカンドボンディングが達成される。
全てのワイヤボンディング終了後、リードフレーム4を成形金型にセットし、半導体チップ2およびボンディングワイヤ6をリードフレーム4およびダイパッド40の必要部分とともに、封止樹脂により一括して封止する。
しかしながら、従来の半導体装置では、ボンディングワイヤ6と例えばエポキシ樹脂からなる封止樹脂11との密着性に劣り、ボンディングワイヤ6および封止樹脂11間が剥離するという問題があった。とくに外部環境条件によって封止樹脂が吸湿したときにこの現象が生じやすく、ボンディングワイヤ6がAuである場合に顕著となる。なお、エポキシ樹脂は吸湿性を有することが知られている。
また、ファーストボンディングにおける第1接合部は上記のように鏡餅形状であり、ボンディングパッド211との接合性は良好であるものの、セカンドボンディングにおける第2接合部は側面視楔状であり、またボンディングワイヤ6はリード端子50の上面51に対して角度θでもって傾斜して接合されることから、ボンディングワイヤ6およびリード端子50間の接合不良が生じるという問題もある。
なお、下記特許文献1には、絶縁性微粒子と、Si微粒子と、有機Si化合物とを含む絶縁性ペーストが開示されている。しかし下記特許文献1には、その絶縁性ペーストをボンディングワイヤ6と封止樹脂11との界面に介在させ、両者の密着性を高め、かつセカンドボンディングにおけるボンディングワイヤ6およびリード端子50間の接合を改善しようとする技術思想は何ら開示または示唆されていない。
特開2014−107352号公報
したがって本発明の目的は、ボンディングワイヤと封止樹脂との密着性を高め、両者間の剥離を防止するとともに、セカンドボンディングにおけるボンディングワイヤおよびリード端子間の接合強度が改善された半導体装置およびその製造方法を提供することにある。
本発明者は鋭意研究を重ねた結果、特許文献1に開示された絶縁性ペーストをボンディングワイヤと封止樹脂との界面に存在させることにより、上記課題を解決できることを見出し、本発明を完成するに至った。なお、特許文献1は、特許第5281188号として特許されている。
すなわち本発明は以下の通りである。
(1)半導体チップと、前記半導体チップに設けられたボンディングパッドと、前記半導体チップの周囲に配置された複数のリード端子と、前記半導体チップと前記複数のリード端子とを電気的に接続する複数のボンディングワイヤと、前記半導体チップおよび前記ボンディングワイヤを封止する封止樹脂とを含む半導体装置であって、前記ボンディングワイヤと前記封止樹脂との界面には、絶縁性材料が介在し、前記絶縁性材料は、nmサイズの絶縁性微粒子と非晶質シリカを含有することを特徴とする半導体装置。
(2)前記(1)に記載の半導体装置の製造方法であって、前記半導体チップと前記複数のリード端子とを複数のボンディングワイヤによって電気的に接続した後に、かつ前記封止樹脂による封止を行う前に、少なくとも前記ボンディングワイヤと、nmサイズの絶縁性微粒子および有機Si化合物を含む絶縁性ペーストとを接触させる工程を有することを特徴とする前記半導体装置の製造方法。
(3)前記有機Si化合物は、アルキルアルコキシシランまたはオルガノポリシロキサンであることを特徴とする前記(2)に記載の半導体装置の製造方法。
本発明によれば、ボンディングワイヤと封止樹脂との密着性を高め、両者間の剥離を防止するとともに、セカンドボンディングにおけるボンディングワイヤおよびリード端子間の接合強度が改善された半導体装置およびその製造方法を提供することができる。
一般的な半導体装置を説明するための模式的な断面図である。 本発明に係る絶縁性ペーストを説明するための図である。
本発明の半導体装置は、ボンディングワイヤと封止樹脂との界面に下記で説明する絶縁性材料が介在していれば、従来の半導体装置全般を包含し得る。
例えば、上記図1に示すように、半導体チップ2と、半導体チップ2に設けられたボンディングパッド211と、半導体チップ2の周囲に配置された複数のリード端子50と、半導体チップ2とリード端子50とを電気的に接続する複数のボンディングワイヤ6と、これらを封止する封止樹脂11とを有してなる半導体装置101であることができる。
ボンディングワイヤ6と封止樹脂11との界面に絶縁性材料を介在させるには、半導体チップ2と複数のリード端子50とを複数のボンディングワイヤ6によって電気的に接続した後に、かつ封止樹脂による封止を行う前に、ボンディングワイヤ6と、nmサイズの絶縁性微粒子および有機Si化合物を含む絶縁性ペーストとを接触させればよい。
絶縁性ペーストは、nmサイズの絶縁性微粒子と非晶質シリカを含有する。なお本発明で言うnmサイズとは、1μm以下のサイズを意味する。
図2を参照すると、本発明に係る絶縁性ペースト300は、絶縁性微粒子311と、好適にはSi微粒子312と、液状の有機Si化合物320とを含む。有機Si化合物320は、Si微粒子312と反応したとき、絶縁性微粒子311を骨材とし、その周りにSi−O結合(非晶質シリカ(SiO2))を形成する。
絶縁性微粒子311及びSi微粒子312は、nmサイズ(1μm以下)の粒径を有する。絶縁性微粒子311及びSi微粒子312は、図1では、球形状として示されているが、その外形形状は任意であり、球形に限定されるものではない。
絶縁性微粒子311としては、チタン酸バリウム、シリカ、アルミナ等の金属酸化物微粒子(セラミック)が挙げられる。また、絶縁性微粒子311は、その粒径が均一である必要はなく、上述したnmサイズの領域内で、異なる粒径のものを含むことができる。
Si微粒子312は、任意成分であるが、本発明の効果の発現に有利な成分である。Si微粒子312は、その粒径が均一である必要はなく、上述したnmサイズの領域内で、異なる粒径のものを含むことができる。
有機Si化合物320の代表例は、下記化学式、
CH3O-[SiOn-1(CH3)n(OCH3)n]-CH3
で表わされるアルキルアルコキシシランが挙げられる。
そのほか、オルガノポリシロキサン(例えば官能性側鎖アルコキシシラン)を用いることもできる。具体的には、Si又はテトラシロキサンに、アルコキシ基(RO)がついたもの等がある。なお、Rは有機基である。
絶縁性ペースト300とボンディングワイヤ6とを接触させるには、半導体チップ2と複数のリード端子50とを複数のボンディングワイヤ6によって電気的に接続した後に、かつ封止樹脂11による封止を行う前に、この部品を絶縁性ペーストを収容した浸漬槽に浸漬する方法や、該部品に対して絶縁性ペーストをスプレーする等の方法がある。この工程の後、該部品を風乾または加熱する等の方法により乾燥するのが好ましい。絶縁性ペーストのコーティング厚はとくに制限されないが、通常100nmあるいはそれ以下である。
絶縁性ペーストがコーティングされた該部品は、封止樹脂11による封止が行われる。封止樹脂としては、通常、エポキシ樹脂が用いられる。封止方法は公知の方法にしたがい行えばよく、例えば、該部品を金型に嵌め込んで樹脂を流し込み、樹脂を硬化させることにより行われる。
このようにして得られる本発明の半導体装置は、ボンディングワイヤ6と封止樹脂11との界面に絶縁性材料が介在しており、ボンディングワイヤ6と封止樹脂11との密着性が高まり、両者間の剥離が防止される。
また、セカンドボンディングにおけるボンディングワイヤ6およびリード端子50間の接合強度も改善される。
なお、ボンディングワイヤ6としては、Au、Al、Cu製等の公知のワイヤが挙げられるが、本発明では、Auワイヤを使用したときにとくにその効果を高めることができる。封止樹脂もとくに制限されないが、本発明では、封止樹脂としてエポキシ樹脂を使用したときにとくにその効果を高めることができる。
本発明の半導体装置を使用した電子デバイスとしては、例えばセンサーモジュル、光電気モジュール、ユニポーラトランジスタ、MOS FET、CMOS FET、メモリーセル、もしくは、それらの集積回路部品(IC)、又は各種スケールのLSI等、凡そ、電子回路を機能要素とする電子デバイスのほとんどが含まれる。
本発明の効果を証明するために以下の実験を行った。
絶縁性ペーストの調製
絶縁性微粒子としてチタン酸バリウム、Si微粒子、式CH3O-[SiOn-1(CH3)n(OCH3)n]-CH3で示されるオルガノポリシロキサンを混合し、絶縁性ペーストを調製した。
封止樹脂で封止される前の半導体装置を、前記絶縁性ペースト中に浸漬し、風乾した。続いて、所定の金型に導入し、エポキシ樹脂による樹脂封止を行った。
なお、本実施例の半導体装置は、図1に示すように、半導体チップ2と、半導体チップ2に設けられたボンディングパッド211と、半導体チップ2の周囲に配置された複数のリード端子50と、半導体チップ2とリード端子50とを電気的に接続する複数のボンディングワイヤ6と、これらを封止する封止樹脂11とを有してなり、ボンディングワイヤ6はAu線であり、半導体チップ2の平面サイズは例えば4mm□程度であり、電極パッド211とリード端子50との距離は500μm程度であり、ボンディングワイヤ6はリード端子50の上面51に対して傾斜して接合されている。
ボンディングワイヤ6と封止樹脂11との密着性を調べた。その結果、該実験後であってもボンディングワイヤ6と封止樹脂11との密着性は良好であり、両者の剥離は観察されなかったが、絶縁性ペーストを接触させていない半導体装置の場合は、ボンディングワイヤ6と封止樹脂11との間で剥離が観察された。
また、セカンドボンディングにおけるボンディングワイヤ6およびリード端子50間の接合状態を観察したところ、絶縁性ペーストを接触させた本発明の半導体装置では、接合状態に変化は見られなかったが、絶縁性ペーストを接触させていない半導体装置の場合は、複数のボンディングワイヤ6がリード端子50から切断された。
101 半導体装置
11 封止樹脂
2 半導体チップ
3 接合材
4 リードフレーム
40 ダイパッド
50 リード端子
51 リード端子の上面
6 ボンディングワイヤ
211 ボンディングパッド
300 絶縁性ペースト
311 絶縁性微粒子
312 Si微粒子
320 有機Si化合物

Claims (3)

  1. 半導体チップと、
    前記半導体チップに設けられたボンディングパッドと、
    前記半導体チップの周囲に配置された複数のリード端子と、
    前記半導体チップと前記複数のリード端子とを電気的に接続する複数のボンディングワイヤと、
    前記半導体チップおよび前記ボンディングワイヤを封止するエポキシ樹脂からなる封止樹脂とを含む半導体装置であって、
    前記ボンディングワイヤと前記封止樹脂との界面には、絶縁性材料が介在し、
    前記絶縁性材料は、1μm以下の粒径を有する絶縁性微粒子と非晶質シリカを含有する
    ことを特徴とする半導体装置。
  2. 請求項1に記載の半導体装置の製造方法であって、
    前記半導体チップと前記複数のリード端子とを複数のボンディングワイヤによって電気的に接続した後に、かつ前記封止樹脂による封止を行う前に、
    少なくとも前記ボンディングワイヤと、1μm以下の粒径を有する絶縁性微粒子および有機Si化合物を含む絶縁性ペーストとを接触させる工程を有する
    ことを特徴とする前記半導体装置の製造方法。
  3. 前記有機Si化合物は、アルキルアルコキシシランまたはオルガノポリシロキサンであることを特徴とする請求項2に記載の半導体装置の製造方法。
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