JP6258538B1 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP6258538B1 JP6258538B1 JP2017048518A JP2017048518A JP6258538B1 JP 6258538 B1 JP6258538 B1 JP 6258538B1 JP 2017048518 A JP2017048518 A JP 2017048518A JP 2017048518 A JP2017048518 A JP 2017048518A JP 6258538 B1 JP6258538 B1 JP 6258538B1
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- bonding
- semiconductor chip
- semiconductor device
- sealing resin
- bonding wire
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- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000007789 sealing Methods 0.000 claims abstract description 42
- 229920005989 resin Polymers 0.000 claims abstract description 37
- 239000011347 resin Substances 0.000 claims abstract description 37
- 239000010419 fine particle Substances 0.000 claims abstract description 26
- 239000011810 insulating material Substances 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 9
- 239000003822 epoxy resin Substances 0.000 claims description 6
- 229920000647 polyepoxide Polymers 0.000 claims description 6
- 229920001296 polysiloxane Polymers 0.000 claims description 4
- 230000000694 effects Effects 0.000 description 4
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
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- 229910045601 alloy Inorganic materials 0.000 description 1
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- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical compound [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- RSNQKPMXXVDJFG-UHFFFAOYSA-N tetrasiloxane Chemical compound [SiH3]O[SiH2]O[SiH2]O[SiH3] RSNQKPMXXVDJFG-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】本発明の半導体装置101は、半導体チップ2と、半導体チップ2に設けられたボンディングパッド211と、半導体チップ2の周囲に配置された複数のリード端子50と、半導体チップ2と複数のリード端子50とを電気的に接続する複数のボンディングワイヤ6と、半導体チップ2およびボンディングワイヤ6を封止する封止樹脂11とを含み、ボンディングワイヤ6と封止樹脂11との界面には、絶縁性材料が介在し、絶縁性材料は、nmサイズの絶縁性微粒子と非晶質シリカを含有する。
【選択図】図1
Description
半導体装置101は、半導体チップ2と、半導体チップ2に設けられたボンディングパッド211と、半導体チップ2の周囲に配置された複数のリード端子50と、半導体チップ2とリード端子50とを電気的に接続する複数のボンディングワイヤ6と、これらを封止する封止樹脂11とを有してなる。半導体装置101の平面サイズは例えば4mm□程度であり、厚さは例えば1mm以下である。
リードフレーム4は、底面視で半導体装置101の中央部に配置されたダイパッド40と、ダイパッド40を取り囲むようにその周囲に間隔を空けて配置された複数のリード端子50とを含み、ダイパッド40の上面41とリード端子50の上面51とが同一平面に形成されている。リードフレーム4は、例えば200μm程度のCuやFe−Ni合金薄板からなり、打ち抜き加工やエッチング等により形成される。
ボンディングパッド211には、ボンディングワイヤ6の一端が接合されている。各ボンディングワイヤ6の他端は、リード端子50の上面51に接合されている。これにより、半導体チップ2は、ボンディングワイヤ6を介して、リード端子50と電気的に接続されている。ボンディングワイヤ6の長さは、ボンディングパッド211とリード端子50との距離に応じた長さであり、電極パッド211とリード端子50との距離は、例えば500μm〜800μmである。
すなわち本発明は以下の通りである。
(2)前記(1)に記載の半導体装置の製造方法であって、前記半導体チップと前記複数のリード端子とを複数のボンディングワイヤによって電気的に接続した後に、かつ前記封止樹脂による封止を行う前に、少なくとも前記ボンディングワイヤと、nmサイズの絶縁性微粒子および有機Si化合物を含む絶縁性ペーストとを接触させる工程を有することを特徴とする前記半導体装置の製造方法。
(3)前記有機Si化合物は、アルキルアルコキシシランまたはオルガノポリシロキサンであることを特徴とする前記(2)に記載の半導体装置の製造方法。
例えば、上記図1に示すように、半導体チップ2と、半導体チップ2に設けられたボンディングパッド211と、半導体チップ2の周囲に配置された複数のリード端子50と、半導体チップ2とリード端子50とを電気的に接続する複数のボンディングワイヤ6と、これらを封止する封止樹脂11とを有してなる半導体装置101であることができる。
CH3O-[SinOn-1(CH3)n(OCH3)n]-CH3
で表わされるアルキルアルコキシシランが挙げられる。
そのほか、オルガノポリシロキサン(例えば官能性側鎖アルコキシシラン)を用いることもできる。具体的には、Si又はテトラシロキサンに、アルコキシ基(RO)がついたもの等がある。なお、Rは有機基である。
また、セカンドボンディングにおけるボンディングワイヤ6およびリード端子50間の接合強度も改善される。
絶縁性ペーストの調製
絶縁性微粒子としてチタン酸バリウム、Si微粒子、式CH3O-[SinOn-1(CH3)n(OCH3)n]-CH3で示されるオルガノポリシロキサンを混合し、絶縁性ペーストを調製した。
なお、本実施例の半導体装置は、図1に示すように、半導体チップ2と、半導体チップ2に設けられたボンディングパッド211と、半導体チップ2の周囲に配置された複数のリード端子50と、半導体チップ2とリード端子50とを電気的に接続する複数のボンディングワイヤ6と、これらを封止する封止樹脂11とを有してなり、ボンディングワイヤ6はAu線であり、半導体チップ2の平面サイズは例えば4mm□程度であり、電極パッド211とリード端子50との距離は500μm程度であり、ボンディングワイヤ6はリード端子50の上面51に対して傾斜して接合されている。
また、セカンドボンディングにおけるボンディングワイヤ6およびリード端子50間の接合状態を観察したところ、絶縁性ペーストを接触させた本発明の半導体装置では、接合状態に変化は見られなかったが、絶縁性ペーストを接触させていない半導体装置の場合は、複数のボンディングワイヤ6がリード端子50から切断された。
11 封止樹脂
2 半導体チップ
3 接合材
4 リードフレーム
40 ダイパッド
50 リード端子
51 リード端子の上面
6 ボンディングワイヤ
211 ボンディングパッド
300 絶縁性ペースト
311 絶縁性微粒子
312 Si微粒子
320 有機Si化合物
Claims (3)
- 半導体チップと、
前記半導体チップに設けられたボンディングパッドと、
前記半導体チップの周囲に配置された複数のリード端子と、
前記半導体チップと前記複数のリード端子とを電気的に接続する複数のボンディングワイヤと、
前記半導体チップおよび前記ボンディングワイヤを封止するエポキシ樹脂からなる封止樹脂とを含む半導体装置であって、
前記ボンディングワイヤと前記封止樹脂との界面には、絶縁性材料が介在し、
前記絶縁性材料は、1μm以下の粒径を有する絶縁性微粒子と非晶質シリカを含有する
ことを特徴とする半導体装置。 - 請求項1に記載の半導体装置の製造方法であって、
前記半導体チップと前記複数のリード端子とを複数のボンディングワイヤによって電気的に接続した後に、かつ前記封止樹脂による封止を行う前に、
少なくとも前記ボンディングワイヤと、1μm以下の粒径を有する絶縁性微粒子および有機Si化合物を含む絶縁性ペーストとを接触させる工程を有する
ことを特徴とする前記半導体装置の製造方法。 - 前記有機Si化合物は、アルキルアルコキシシランまたはオルガノポリシロキサンであることを特徴とする請求項2に記載の半導体装置の製造方法。
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JPH0465840A (ja) * | 1990-07-06 | 1992-03-02 | Oki Electric Ind Co Ltd | 樹脂封止型半導体装置及びその製造方法 |
JPH04217334A (ja) * | 1990-12-19 | 1992-08-07 | Tanaka Denshi Kogyo Kk | 半導体素子用ボンディングワイヤ |
JPH0574831A (ja) * | 1991-09-11 | 1993-03-26 | Nec Corp | 半導体装置 |
JP2014107352A (ja) * | 2012-11-26 | 2014-06-09 | Napura:Kk | 絶縁性ペースト、電子デバイス及び絶縁部形成方法 |
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