JP6258538B1 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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JP6258538B1
JP6258538B1 JP2017048518A JP2017048518A JP6258538B1 JP 6258538 B1 JP6258538 B1 JP 6258538B1 JP 2017048518 A JP2017048518 A JP 2017048518A JP 2017048518 A JP2017048518 A JP 2017048518A JP 6258538 B1 JP6258538 B1 JP 6258538B1
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bonding
semiconductor chip
semiconductor device
sealing resin
bonding wire
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JP2018152492A (ja
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重信 関根
重信 関根
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有限会社 ナプラ
有限会社 ナプラ
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Priority to CN201810116107.0A priority patent/CN108573935B/zh
Priority to US15/906,099 priority patent/US10468376B2/en
Publication of JP2018152492A publication Critical patent/JP2018152492A/ja
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Abstract

【課題】ボンディングワイヤと封止樹脂との密着性を高め、両者間の剥離を防止するとともに、セカンドボンディングにおけるボンディングワイヤおよびリード端子間の接合強度が改善された半導体装置を提供する。
【解決手段】本発明の半導体装置１０１は、半導体チップ２と、半導体チップ２に設けられたボンディングパッド２１１と、半導体チップ２の周囲に配置された複数のリード端子５０と、半導体チップ２と複数のリード端子５０とを電気的に接続する複数のボンディングワイヤ６と、半導体チップ２およびボンディングワイヤ６を封止する封止樹脂１１とを含み、ボンディングワイヤ６と封止樹脂１１との界面には、絶縁性材料が介在し、絶縁性材料は、ｎｍサイズの絶縁性微粒子と非晶質シリカを含有する。
【選択図】図１

Description

本発明は、半導体装置およびその製造方法に関する。
図１は、一般的な半導体装置を説明するための模式的な断面図である。
半導体装置１０１は、半導体チップ２と、半導体チップ２に設けられたボンディングパッド２１１と、半導体チップ２の周囲に配置された複数のリード端子５０と、半導体チップ２とリード端子５０とを電気的に接続する複数のボンディングワイヤ６と、これらを封止する封止樹脂１１とを有してなる。半導体装置１０１の平面サイズは例えば４ｍｍ□程度であり、厚さは例えば１ｍｍ以下である。
さらに詳しく説明する。
リードフレーム４は、底面視で半導体装置１０１の中央部に配置されたダイパッド４０と、ダイパッド４０を取り囲むようにその周囲に間隔を空けて配置された複数のリード端子５０とを含み、ダイパッド４０の上面４１とリード端子５０の上面５１とが同一平面に形成されている。リードフレーム４は、例えば２００μｍ程度のＣｕやＦｅ−Ｎｉ合金薄板からなり、打ち抜き加工やエッチング等により形成される。
半導体チップ２は、ボンディングパッド２１１が形成された表面２１を上方に向けた姿勢で、その裏面２２が接合材３を介してダイパッド４０に接合されている。
ボンディングパッド２１１には、ボンディングワイヤ６の一端が接合されている。各ボンディングワイヤ６の他端は、リード端子５０の上面５１に接合されている。これにより、半導体チップ２は、ボンディングワイヤ６を介して、リード端子５０と電気的に接続されている。ボンディングワイヤ６の長さは、ボンディングパッド２１１とリード端子５０との距離に応じた長さであり、電極パッド２１１とリード端子５０との距離は、例えば５００μｍ〜８００μｍである。
ボンディングワイヤ６の形成は、ボールボンディング法等の公知の方法により行うことができる。まず、ワイヤボンダのキャピラリに保持されたボンディングワイヤ６の先端部に電流を印加することにより、その先端部にＦＡＢ（Free Air Ball）を形成する。次にキャピラリを降下させ、ＦＡＢをボンディングパッド２１１に押し付けて超音波を付与すると、ＦＡＢが変形してボンディングパッド２１１上に鏡餅形状の第1接合部が形成され、ファーストボンディングが達成される。続いて、ボンディングワイヤ６を半導体チップ２の周縁から離れる方向に、キャピラリを移動させ、キャピラリに保持されたワイヤマージンをリード端子５０の上面５１に押し付け、超音波を付与することにより引きちぎり、リード端子５０上に側面視楔状の第２接合部が形成され、セカンドボンディングが達成される。
全てのワイヤボンディング終了後、リードフレーム４を成形金型にセットし、半導体チップ２およびボンディングワイヤ６をリードフレーム４およびダイパッド４０の必要部分とともに、封止樹脂により一括して封止する。
しかしながら、従来の半導体装置では、ボンディングワイヤ６と例えばエポキシ樹脂からなる封止樹脂１１との密着性に劣り、ボンディングワイヤ６および封止樹脂１１間が剥離するという問題があった。とくに外部環境条件によって封止樹脂が吸湿したときにこの現象が生じやすく、ボンディングワイヤ６がＡｕである場合に顕著となる。なお、エポキシ樹脂は吸湿性を有することが知られている。
また、ファーストボンディングにおける第１接合部は上記のように鏡餅形状であり、ボンディングパッド２１１との接合性は良好であるものの、セカンドボンディングにおける第２接合部は側面視楔状であり、またボンディングワイヤ６はリード端子５０の上面５１に対して角度θでもって傾斜して接合されることから、ボンディングワイヤ６およびリード端子５０間の接合不良が生じるという問題もある。
なお、下記特許文献１には、絶縁性微粒子と、Ｓｉ微粒子と、有機Ｓｉ化合物とを含む絶縁性ペーストが開示されている。しかし下記特許文献１には、その絶縁性ペーストをボンディングワイヤ６と封止樹脂１１との界面に介在させ、両者の密着性を高め、かつセカンドボンディングにおけるボンディングワイヤ６およびリード端子５０間の接合を改善しようとする技術思想は何ら開示または示唆されていない。
特開２０１４−１０７３５２号公報
したがって本発明の目的は、ボンディングワイヤと封止樹脂との密着性を高め、両者間の剥離を防止するとともに、セカンドボンディングにおけるボンディングワイヤおよびリード端子間の接合強度が改善された半導体装置およびその製造方法を提供することにある。
本発明者は鋭意研究を重ねた結果、特許文献１に開示された絶縁性ペーストをボンディングワイヤと封止樹脂との界面に存在させることにより、上記課題を解決できることを見出し、本発明を完成するに至った。なお、特許文献１は、特許第５２８１１８８号として特許されている。
すなわち本発明は以下の通りである。
（１）半導体チップと、前記半導体チップに設けられたボンディングパッドと、前記半導体チップの周囲に配置された複数のリード端子と、前記半導体チップと前記複数のリード端子とを電気的に接続する複数のボンディングワイヤと、前記半導体チップおよび前記ボンディングワイヤを封止する封止樹脂とを含む半導体装置であって、前記ボンディングワイヤと前記封止樹脂との界面には、絶縁性材料が介在し、前記絶縁性材料は、ｎｍサイズの絶縁性微粒子と非晶質シリカを含有することを特徴とする半導体装置。
（２）前記（１）に記載の半導体装置の製造方法であって、前記半導体チップと前記複数のリード端子とを複数のボンディングワイヤによって電気的に接続した後に、かつ前記封止樹脂による封止を行う前に、少なくとも前記ボンディングワイヤと、ｎｍサイズの絶縁性微粒子および有機Ｓｉ化合物を含む絶縁性ペーストとを接触させる工程を有することを特徴とする前記半導体装置の製造方法。
（３）前記有機Ｓｉ化合物は、アルキルアルコキシシランまたはオルガノポリシロキサンであることを特徴とする前記（２）に記載の半導体装置の製造方法。
本発明によれば、ボンディングワイヤと封止樹脂との密着性を高め、両者間の剥離を防止するとともに、セカンドボンディングにおけるボンディングワイヤおよびリード端子間の接合強度が改善された半導体装置およびその製造方法を提供することができる。
一般的な半導体装置を説明するための模式的な断面図である。 本発明に係る絶縁性ペーストを説明するための図である。
本発明の半導体装置は、ボンディングワイヤと封止樹脂との界面に下記で説明する絶縁性材料が介在していれば、従来の半導体装置全般を包含し得る。
例えば、上記図１に示すように、半導体チップ２と、半導体チップ２に設けられたボンディングパッド２１１と、半導体チップ２の周囲に配置された複数のリード端子５０と、半導体チップ２とリード端子５０とを電気的に接続する複数のボンディングワイヤ６と、これらを封止する封止樹脂１１とを有してなる半導体装置１０１であることができる。
ボンディングワイヤ６と封止樹脂１１との界面に絶縁性材料を介在させるには、半導体チップ２と複数のリード端子５０とを複数のボンディングワイヤ６によって電気的に接続した後に、かつ封止樹脂による封止を行う前に、ボンディングワイヤ６と、ｎｍサイズの絶縁性微粒子および有機Ｓｉ化合物を含む絶縁性ペーストとを接触させればよい。
絶縁性ペーストは、ｎｍサイズの絶縁性微粒子と非晶質シリカを含有する。なお本発明で言うｎｍサイズとは、１μｍ以下のサイズを意味する。
図２を参照すると、本発明に係る絶縁性ペースト３００は、絶縁性微粒子３１１と、好適にはＳｉ微粒子３１２と、液状の有機Ｓｉ化合物３２０とを含む。有機Ｓｉ化合物３２０は、Ｓｉ微粒子３１２と反応したとき、絶縁性微粒子３１１を骨材とし、その周りにＳｉ−Ｏ結合（非晶質シリカ（SiO2））を形成する。
絶縁性微粒子３１１及びＳｉ微粒子３１２は、ｎｍサイズ（１μｍ以下）の粒径を有する。絶縁性微粒子３１１及びＳｉ微粒子３１２は、図１では、球形状として示されているが、その外形形状は任意であり、球形に限定されるものではない。
絶縁性微粒子３１１としては、チタン酸バリウム、シリカ、アルミナ等の金属酸化物微粒子（セラミック）が挙げられる。また、絶縁性微粒子３１１は、その粒径が均一である必要はなく、上述したｎｍサイズの領域内で、異なる粒径のものを含むことができる。
Ｓｉ微粒子３１２は、任意成分であるが、本発明の効果の発現に有利な成分である。Ｓｉ微粒子３１２は、その粒径が均一である必要はなく、上述したｎｍサイズの領域内で、異なる粒径のものを含むことができる。
有機Ｓｉ化合物３２０の代表例は、下記化学式、
CH3O-[SiｎOn-1(CH3)n(OCH3)n]-CH3
で表わされるアルキルアルコキシシランが挙げられる。
そのほか、オルガノポリシロキサン（例えば官能性側鎖アルコキシシラン）を用いることもできる。具体的には、Si又はテトラシロキサンに、アルコキシ基（RO）がついたもの等がある。なお、Rは有機基である。
絶縁性ペースト３００とボンディングワイヤ６とを接触させるには、半導体チップ２と複数のリード端子５０とを複数のボンディングワイヤ６によって電気的に接続した後に、かつ封止樹脂１１による封止を行う前に、この部品を絶縁性ペーストを収容した浸漬槽に浸漬する方法や、該部品に対して絶縁性ペーストをスプレーする等の方法がある。この工程の後、該部品を風乾または加熱する等の方法により乾燥するのが好ましい。絶縁性ペーストのコーティング厚はとくに制限されないが、通常１００ｎｍあるいはそれ以下である。
絶縁性ペーストがコーティングされた該部品は、封止樹脂１１による封止が行われる。封止樹脂としては、通常、エポキシ樹脂が用いられる。封止方法は公知の方法にしたがい行えばよく、例えば、該部品を金型に嵌め込んで樹脂を流し込み、樹脂を硬化させることにより行われる。
このようにして得られる本発明の半導体装置は、ボンディングワイヤ６と封止樹脂１１との界面に絶縁性材料が介在しており、ボンディングワイヤ６と封止樹脂１１との密着性が高まり、両者間の剥離が防止される。
また、セカンドボンディングにおけるボンディングワイヤ６およびリード端子５０間の接合強度も改善される。
なお、ボンディングワイヤ６としては、Ａｕ、Ａｌ、Ｃｕ製等の公知のワイヤが挙げられるが、本発明では、Ａｕワイヤを使用したときにとくにその効果を高めることができる。封止樹脂もとくに制限されないが、本発明では、封止樹脂としてエポキシ樹脂を使用したときにとくにその効果を高めることができる。
本発明の半導体装置を使用した電子デバイスとしては、例えばセンサーモジュル、光電気モジュール、ユニポーラトランジスタ、ＭＯＳ ＦＥＴ、ＣＭＯＳ ＦＥＴ、メモリーセル、もしくは、それらの集積回路部品（ＩＣ）、又は各種スケールのＬＳＩ等、凡そ、電子回路を機能要素とする電子デバイスのほとんどが含まれる。
本発明の効果を証明するために以下の実験を行った。
絶縁性ペーストの調製
絶縁性微粒子としてチタン酸バリウム、Ｓｉ微粒子、式CH3O-[SiｎOn-1(CH3)n(OCH3)n]-CH3で示されるオルガノポリシロキサンを混合し、絶縁性ペーストを調製した。
封止樹脂で封止される前の半導体装置を、前記絶縁性ペースト中に浸漬し、風乾した。続いて、所定の金型に導入し、エポキシ樹脂による樹脂封止を行った。
なお、本実施例の半導体装置は、図１に示すように、半導体チップ２と、半導体チップ２に設けられたボンディングパッド２１１と、半導体チップ２の周囲に配置された複数のリード端子５０と、半導体チップ２とリード端子５０とを電気的に接続する複数のボンディングワイヤ６と、これらを封止する封止樹脂１１とを有してなり、ボンディングワイヤ６はＡｕ線であり、半導体チップ２の平面サイズは例えば４ｍｍ□程度であり、電極パッド２１１とリード端子５０との距離は５００μｍ程度であり、ボンディングワイヤ６はリード端子５０の上面５１に対して傾斜して接合されている。
ボンディングワイヤ６と封止樹脂１１との密着性を調べた。その結果、該実験後であってもボンディングワイヤ６と封止樹脂１１との密着性は良好であり、両者の剥離は観察されなかったが、絶縁性ペーストを接触させていない半導体装置の場合は、ボンディングワイヤ６と封止樹脂１１との間で剥離が観察された。
また、セカンドボンディングにおけるボンディングワイヤ６およびリード端子５０間の接合状態を観察したところ、絶縁性ペーストを接触させた本発明の半導体装置では、接合状態に変化は見られなかったが、絶縁性ペーストを接触させていない半導体装置の場合は、複数のボンディングワイヤ６がリード端子５０から切断された。
１０１ 半導体装置
１１ 封止樹脂
２ 半導体チップ
３ 接合材
４ リードフレーム
４０ ダイパッド
５０ リード端子
５１ リード端子の上面
６ ボンディングワイヤ
２１１ ボンディングパッド
３００ 絶縁性ペースト
３１１ 絶縁性微粒子
３１２ Ｓｉ微粒子
３２０ 有機Ｓｉ化合物

Claims (3)

  1. 半導体チップと、
    前記半導体チップに設けられたボンディングパッドと、
    前記半導体チップの周囲に配置された複数のリード端子と、
    前記半導体チップと前記複数のリード端子とを電気的に接続する複数のボンディングワイヤと、
    前記半導体チップおよび前記ボンディングワイヤを封止するエポキシ樹脂からなる封止樹脂とを含む半導体装置であって、
    前記ボンディングワイヤと前記封止樹脂との界面には、絶縁性材料が介在し、
    前記絶縁性材料は、１μｍ以下の粒径を有する絶縁性微粒子と非晶質シリカを含有する
    ことを特徴とする半導体装置。
  2. 請求項１に記載の半導体装置の製造方法であって、
    前記半導体チップと前記複数のリード端子とを複数のボンディングワイヤによって電気的に接続した後に、かつ前記封止樹脂による封止を行う前に、
    少なくとも前記ボンディングワイヤと、１μｍ以下の粒径を有する絶縁性微粒子および有機Ｓｉ化合物を含む絶縁性ペーストとを接触させる工程を有する
    ことを特徴とする前記半導体装置の製造方法。
  3. 前記有機Ｓｉ化合物は、アルキルアルコキシシランまたはオルガノポリシロキサンであることを特徴とする請求項２に記載の半導体装置の製造方法。
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