CN108573935B - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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CN108573935B
CN108573935B CN201810116107.0A CN201810116107A CN108573935B CN 108573935 B CN108573935 B CN 108573935B CN 201810116107 A CN201810116107 A CN 201810116107A CN 108573935 B CN108573935 B CN 108573935B
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bonding
semiconductor chip
sealing resin
semiconductor device
fine particles
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CN108573935A (zh
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关根重信
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Napra Co Ltd
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Napra Co Ltd
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Abstract

本发明涉及半导体装置及其制造方法。本发明提供提高接合线与密封树脂的密合性、防止两者间的剥离、并且第二接合中的接合线及引线端子间的接合强度得到改善的半导体装置。本发明的半导体装置(101)包含半导体芯片(2)、设置于半导体芯片(2)上的接合衬垫(211)、配置于半导体芯片(2)的周围的多个引线端子(50)、将半导体芯片(2)与多个引线端子(50)电连接的多个接合线(6)和将半导体芯片(2)及接合线(6)密封的密封树脂(11)，在接合线(6)与密封树脂(11)的界面中夹有绝缘性材料，绝缘性材料含有nm尺寸的绝缘性微粒和非晶质二氧化硅。

Description

半导体装置及其制造方法
技术领域
本发明涉及半导体装置及其制造方法。
背景技术
图1是用于说明一般的半导体装置的示意性截面图。
半导体装置101具有半导体芯片2、设置于半导体芯片2上的接合衬垫 211、配置于半导体芯片2的周围的多个引线端子50、将半导体芯片2与引线端子50电连接的多个接合线6和将它们密封的密封树脂11而成。半导体装置101的平面尺寸例如为4mm□左右，厚度例如为1mm以下。
进一步进行详细说明。
引线框4包含在仰视下配置于半导体装置101的中央部的冲模衬垫40 和按照将冲模衬垫40包围的方式在其周围空出间隔而配置的多个引线端子 50，冲模衬垫40的上表面41与引线端子50的上表面51形成于同一平面上。引线框4例如由200μm左右的Cu或Fe-Ni合金薄板形成，通过冲裁加工或蚀刻等而形成。
半导体芯片2以使形成有接合衬垫211的表面21朝向上方的姿势，其背面22介由接合材料3被接合于冲模衬垫40上。
在接合衬垫211上接合有接合线6的一端。各接合线6的另一端被接合于引线端子50的上表面51。由此，半导体芯片2介由接合线6与引线端子50电连接。接合线6的长度是跟接合衬垫211与引线端子50的距离相应的长度，电极衬垫211与引线端子50的距离为例如500μm～800μm。
接合线6的形成可以通过球焊法等公知的方法而进行。首先，通过对保持在焊线机的毛细管中的接合线6的前端部施加电流，从而在其前端部上形成FAB(Free Air Ball，无空气球)。接着使毛细管下降，在将FAB按压在接合衬垫211上而赋予超声波时，FAB变形而在接合衬垫211上形成镜饼形状的第1接合部，达成第一接合。紧接着，沿使接合线6从半导体芯片2的周缘离开的方向，使毛细管移动，将保持在毛细管中的线余量按压于引线端子50的上表面51，通过赋予超声波而扯断，在引线端子50上形成侧视楔状的第2接合部，达成第二接合。
在全部的引线接合结束后，将引线框4安置在成形模具中，将半导体芯片2及接合线6与引线框4及冲模衬垫40的必要部分一起通过密封树脂一并密封。
然而，在以往的半导体装置中，接合线6与例如由环氧树脂形成的密封树脂11的密合性差，存在接合线6及密封树脂11间发生剥离的问题。特别是在密封树脂根据外部环境条件而吸湿时容易产生该现象，在接合线6 为Au的情况下变得显著。另外，已知环氧树脂具有吸湿性。
此外，虽然第一接合中的第1接合部如上述那样为镜饼形状，与接合衬垫211的接合性良好，但是由于第二接合中的第2接合部为侧视楔状，并且接合线6相对于引线端子50的上表面51以角度θ倾斜而接合，所以还存在产生接合线6及引线端子50间的接合不良的问题。
另外，在下述专利文献1中公开了包含绝缘性微粒、Si微粒和有机Si 化合物的绝缘性糊料。但是在下述专利文献1中，想要使该绝缘性糊料夹在接合线6与密封树脂11的界面中而提高两者的密合性、且改善第二接合中的接合线6及引线端子50间的接合的技术构思没有任何公开或教示。
现有技术文献
专利文献
专利文献1：日本特开2014-107352号公报
发明内容
发明所要解决的技术问题
因此本发明的目的在于提供提高接合线与密封树脂的密合性、防止两者间的剥离、并且第二接合中的接合线及引线端子间的接合强度得到改善的半导体装置及其制造方法。
用于解决问题的手段
本发明人重复进行了深入研究，结果发现，通过使专利文献1中公开的绝缘性糊料存在于接合线与密封树脂的界面，能够解决上述课题，最终完成本发明。另外，专利文献1作为日本专利第5281188号被授权。
即本发明如下所述。
(1)一种半导体装置，其特征在于，其是包含半导体芯片、设置于上述半导体芯片上的接合衬垫、配置于上述半导体芯片的周围的多个引线端子、将上述半导体芯片与上述多个引线端子电连接的多个接合线和将上述半导体芯片及上述接合线密封的密封树脂的半导体装置，其中，在上述接合线与上述密封树脂的界面中夹有绝缘性材料，上述绝缘性材料含有nm 尺寸的绝缘性微粒和非晶质二氧化硅。
(2)一种半导体装置的制造方法，其特征在于，其是上述(1)所述的半导体装置的制造方法，其中，在将上述半导体芯片与上述多个引线端子通过多个接合线而电连接后、且进行利用上述密封树脂的密封前，具有至少使上述接合线与包含nm尺寸的绝缘性微粒及有机Si化合物的绝缘性糊料接触的工序。
(3)根据上述(2)所述的半导体装置的制造方法，其特征在于，上述有机Si化合物为烷基烷氧基硅烷或有机聚硅氧烷。
发明效果
根据本发明，能够提供提高接合线与密封树脂的密合性、防止两者间的剥离、并且第二接合中的接合线及引线端子间的接合强度得到改善的半导体装置及其制造方法。
附图说明
图1是用于说明一般的半导体装置的示意性截面图。
图2是用于说明本发明的绝缘性糊料的图。
符号的说明
101 半导体装置
11 密封树脂
2 半导体芯片
3 接合材料
4 引线框
40 冲模衬垫
50 引线端子
51 引线端子的上表面
6 接合线
211 接合衬垫
300 绝缘性糊料
311 绝缘性微粒
312 Si微粒
320 有机Si化合物
具体实施方式
本发明的半导体装置只要在接合线与密封树脂的界面中夹有下述说明的绝缘性材料，则可包含以往的半导体装置全部。
例如，如上述图1中所示的那样，可以为具有半导体芯片2、设置于半导体芯片2上的接合衬垫211、配置于半导体芯片2的周围的多个引线端子 50、将半导体芯片2与引线端子50电连接的多个接合线6和将它们密封的密封树脂11而成的半导体装置101。
为了使接合线6与密封树脂11的界面中夹有绝缘性材料，只要在将半导体芯片2与多个引线端子50通过多个接合线6而电连接后、且进行利用密封树脂的密封前，使接合线6与包含nm尺寸的绝缘性微粒及有机Si化合物的绝缘性糊料接触即可。
绝缘性糊料含有nm尺寸的绝缘性微粒和非晶质二氧化硅。另外本发明中所谓的nm尺寸是指1μm以下的尺寸。
若参照图2，则本发明的绝缘性糊料300包含绝缘性微粒311、优选 Si微粒312和液状的有机Si化合物320。有机Si化合物320在与Si微粒 312反应时，以绝缘性微粒311作为骨料，在其周围形成Si-O键(非晶质二氧化硅(SiO2))。
绝缘性微粒311及Si微粒312具有nm尺寸(1μm以下)的粒径。绝缘性微粒311及Si微粒312在图1中作为球形状示出，但其外形形状是任意的，并不限定于球形。
作为绝缘性微粒311，可列举出钛酸钡、二氧化硅、氧化铝等金属氧化物微粒(陶瓷)。此外，绝缘性微粒311不需要其粒径均匀，在上述的nm 尺寸的区域内，可以包含不同粒径的微粒。
Si微粒312为任意成分，是对本发明的效果的体现有利的成分。Si微粒312不需要其粒径均匀，在上述的nm尺寸的区域内，可以包含不同粒径的微粒。
有机Si化合物320的代表例可列举出以下述化学式表示的烷基烷氧基硅烷。
CH3O-[SinOn-1(CH3)n(OCH3)n]-CH3
除此以外，也可以使用有机聚硅氧烷(例如官能性侧链烷氧基硅烷)。具体而言，有在Si或四硅氧烷上带有烷氧基(RO)的有机Si化合物等。另外，R为有机基团。
为了使绝缘性糊料300与接合线6接触，有下述方法：在将半导体芯片2与多个引线端子50通过多个接合线6而电连接后、且进行利用密封树脂11的密封前，将该部件浸渍于容纳有绝缘性糊料的浸渍槽中的方法；或对该部件喷雾绝缘性糊料等方法。在该工序之后，优选将该部件通过风干或加热等方法进行干燥。绝缘性糊料的涂覆厚度没有特别限制，但通常为 100nm或其以下。
涂覆有绝缘性糊料的该部件进行利用密封树脂11的密封。作为密封树脂，通常使用环氧树脂。密封方法只要按照公知的方法进行即可，例如通过将该部件嵌入模具中并浇注树脂，使树脂固化来进行。
像这样操作而得到的本发明的半导体装置在接合线6与密封树脂11的界面中夹有绝缘性材料，接合线6与密封树脂11的密合性提高，两者间的剥离得到防止。
此外，第二接合中的接合线6及引线端子50间的接合强度也得到改善。
另外，作为接合线6，可列举出Au、Al、Cu制等公知的线，在本发明中，在使用Au线时能够特别提高该效果。密封树脂也没有特别限制，但在本发明中，在使用环氧树脂作为密封树脂时能够特别提高该效果。
作为使用了本发明的半导体装置的电子设备，例如包含传感器模块、光电模块、单极晶体管、MOS FET、CMOS FET、存储单元、或它们的集成电路部件(IC)、或各种规模的LSI等大致以电子电路作为功能要素的电子设备的绝大部分。
为了证明本发明的效果而进行了以下的实验。
绝缘性糊料的制备
将作为绝缘性微粒的钛酸钡、Si微粒、以式CH3O-[SinOn-1(CH3)n (OCH3)n]-CH3所表示的有机聚硅氧烷混合，制备绝缘性糊料。
将以密封树脂密封前的半导体装置浸渍在上述绝缘性糊料中，风干。紧接着，导入到规定的模具中，进行利用环氧树脂的树脂密封。
另外，本实施例的半导体装置如图1中所示的那样，具有半导体芯片2、设置于半导体芯片2上的接合衬垫211、配置于半导体芯片2的周围的多个引线端子50、将半导体芯片2与引线端子50电连接的多个接合线6和将它们密封的密封树脂11而成，接合线6为Au线，半导体芯片2的平面尺寸为例如4mm□左右，电极衬垫211与引线端子50的距离为500μm左右，接合线6相对于引线端子50的上表面51倾斜地接合。
调查接合线6与密封树脂11的密合性。其结果是，即使是该实验后接合线6与密封树脂11的密合性也良好，没有观察到两者的剥离，但在没有使绝缘性糊料接触的半导体装置的情况下，在接合线6与密封树脂11之间观察到剥离。
此外，观察第二接合中的接合线6及引线端子50间的接合状态，结果在使绝缘性糊料接触的本发明的半导体装置中，接合状态没有见到变化，但在没有使绝缘性糊料接触的半导体装置的情况下，多个接合线6由引线端子50被切断。

Claims (3)

1.一种半导体装置，其特征在于，其是包含：
半导体芯片、
设置于所述半导体芯片上的接合衬垫、
配置于所述半导体芯片的周围的多个引线端子、
将所述半导体芯片与所述多个引线端子电连接的多个接合线、和
将所述半导体芯片及所述接合线密封的由环氧树脂形成的密封树脂，其中，
仅在所述接合线与所述密封树脂的界面中夹有绝缘性材料，
所述绝缘性材料含有绝缘性微粒和非晶质二氧化硅，所述绝缘性微粒具有1μm以下的粒径。
2.一种半导体装置的制造方法，其特征在于，
其是权利要求1所述的半导体装置的制造方法，其中，
在将所述半导体芯片与所述多个引线端子通过多个接合线电连接后、且进行利用所述密封树脂的密封前，
具有至少使所述接合线与包含具有1μm以下的粒径的绝缘性微粒及有机Si化合物的绝缘性糊料接触的工序。
3.根据权利要求2所述的半导体装置的制造方法，其特征在于，所述有机Si化合物为烷基烷氧基硅烷或有机聚硅氧烷。
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