CN101752335B - 半导体装置以及半导体装置的制造方法 - Google Patents

半导体装置以及半导体装置的制造方法 Download PDF

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CN101752335B
CN101752335B CN2009102541947A CN200910254194A CN101752335B CN 101752335 B CN101752335 B CN 101752335B CN 2009102541947 A CN2009102541947 A CN 2009102541947A CN 200910254194 A CN200910254194 A CN 200910254194A CN 101752335 B CN101752335 B CN 101752335B
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semiconductor device
surface electrode
semiconductor element
base material
electrode
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CN101752335A (zh
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冲田真大
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Sharp Corp
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Sharp Corp
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Abstract

本发明涉及半导体装置以及半导体装置的制造方法。本发明的半导体装置，具有形成有能够与外部电连接的外部电极的基材和形成有由导电膏构成的表面电极的半导体元件，在基材上安装有半导体元件，其中，基材的外部电极和半导体元件的表面电极通过引线接合由金丝电连接在一起。由此，提供一种半导体装置以及半导体装置的制造方法，在包括具有能够与外部电连接的外部电极的基材和具有由导电膏构成的表面电极的半导体元件的结构中，能够确保接合可靠性的同时，使表面电极和外部电极的连接方法或连接工序简化。

Description

半导体装置以及半导体装置的制造方法
技术领域
本发明涉及半导体装置以及半导体装置的制造方法，特别涉及通过引线接合将太阳电池等在元件内部不具有布线层的半导体元件的表面电极与安装有半导体元件的基材的外部电极连接的技术。
背景技术
以往，众所周知有对安装在基材上的半导体元件进行树脂密封而成的半导体装置。在这种半导体装置中，基材在与半导体元件的接合面具有能够与半导体装置的外部电连接的引线端子等外部电极。另外，半导体元件在与基材的接合面的相反侧的面具有与基材的外部电极电连接的表面电极。半导体元件的表面电极和基材的外部电极例如通过引线接合由金丝连接在一起。
在半导体元件的表面电极和基材的外部电极的连接上寻求高可靠性。但是，在半导体装置中，由于在引线接合后半导体元件与金丝一起被树脂密封，所以，金丝有时发生剥落。因此，通过使表面电极的表面为粗糙面，从而提高表面电极和金丝的粘结力，或通过对外部电极的表面实施电镀处理或涂敷导电性粘结剂，在该镀层或导电性粘结剂上接合金丝，从而谋求外部电极和金丝的连接的可靠性(例如，参照专利文献1、2)。
但是，通常，表面电极以铝(Al)或铝合金为材质，通过溅射法或蒸镀法形成。因而，若是如IC或LSI等那样，元件内的布线层以与IC或LSI制造工序相同的工艺形成的半导体元件，则能够以相同的工艺形成表面电极。但是，溅射法或蒸镀法需要大规模的设备，工艺成本高。
另一方面，在元件内不具有布线层的半导体元件(例如，太阳电池等)中，为了降低设备成本且提高产量，印刷导电膏，从而形成表面电极。在这样的结构中，广泛采用如下方法(例如参照专利文献3)：将覆盖焊料的铝带(aluminum ribbon)焊接在表面电极和外部电极上，由此，将这二者电连接。
图7是表示包括具有由导电膏构成的表面电极106的半导体元件105的以往的半导体装置100的结构的图。
如图7所示，以往的半导体装置100具有形成有基材电极102以及能够与外部电连接的外部电极103的基材101、和通过对导电膏进行烧结而形成有表面电极106的半导体元件105，并且，使用焊料104半导体元件105安装在基材101的基材电极102上。在半导体元件105的表面电极106和基材101的外部电极103的电连接中，为了可靠地接合在由导电膏构成的表面电极106上，使用带焊料的铝带107。
【现有技术文献】
【专利文献】
【专利文献1】日本国公开特许公报“特开2004-111628号公报(平成16年4月8日公开)”
【专利文献2】日本国公开特许公报“特开平5-136317号公报(1993年6月1日公开)”
【专利文献3】日本国公开特许公报“特开2007-305876号公报(平成19年11月22日公开)”
但是，在以往的半导体装置100中，由于在对铝带107焊接之前涂敷焊剂(flux)，所以，在回流接合后必须进行清洗，除去焊剂。另外，由于需要在将铝带107的位置固定的状态下进行加热，所以，必须设置铝带107的固定夹具。因而，存在为了使半导体元件105的表面电极106与基材101的外部电极103连接而产生很多工时数(工序)的问题。
发明内容
本发明是鉴于上述以往的问题而提出的，其目的在于，提供一种半导体装置以及半导体装置的制造方法，在包括具有能够与外部电连接的外部电极的基材和具有由导电膏构成的表面电极的半导体元件的结构中，能够确保接合的可靠性，并且，使表面电极和外部电极的连接方法或连接工序简化。
为了解决上述问题，本发明的半导体装置中，具有形成有能够与外部电连接的外部电极的基材和形成有由导电膏构成的表面电极的半导体元件，在所述基材上安装有所述半导体元件，其特征在于，所述基材的外部电极和所述半导体元件的表面电极通过引线接合由连接构件电连接在一起。
另外，为了解决上述问题，本发明的半导体装置的造方法中，半导体装置具有形成有能够与外部电连接的外部电极的基材和形成有由导电膏构成的表面电极的半导体元件，在所述基材上安装有所述半导体元件，其特征在于，将所述基材的外部电极和所述半导体元件的表面电极通过引线接合由连接构件电连接。
若采用所述的结构以及方法，由于基材的外部电极和半导体元件的表面电极通过引线接合由连接构件电连接在一起，所以，不需要使用焊剂，从而不需要除去焊剂所需要的工序。另外，也没必要为了接合而固定连接构件，能够确保接合可靠性、并且能够高速接合。因此，能够确保接合可靠性，并且，使表面电极和外部电极的连接方法或连接工序简化。
如上所述，本发明的半导体装置是如下结构：基材的外部电极和半导体元件的表面电极通过引线接合由连接构件电连接在一起。
另外，本发明的半导体装置的制造方法是如下方法：将基材的外部电极和半导体元件的表面电极通过引线接合由连接构件电连接。
因此，发挥能够提供一种半导体装置以及半导体装置的制造方法的效果，在包括具有能够与外部电连接的外部电极的基材和具有由导电膏构成的表面电极的半导体元件的结构中，能够确保接合可靠性、并且使表面电极和外部电极的连接方法或连接工序简化。
附图说明
图1是表示本发明的半导体装置的一个实施方式的图。
图2(a)是表示所述半导体装置的制造过程的图。
图2(b)是表示所述半导体装置的制造过程的图。
图2(c)是表示所述半导体装置的制造过程的图。
图2(d)是表示所述半导体装置的制造过程的图。
图3(a)是表示所述半导体装置的其它制造过程的图。
图3(b)是表示所述半导体装置的其它制造过程的图。
图3(c)是表示所述半导体装置的其它制造过程的图。
图3(d)是表示所述半导体装置的其它制造过程的图。
图4是表示所述半导体装置的第一接合时的半导体元件的表面电极和起始球(initial ball)的位置关系的图。
图5是表示所述半导体装置中的针对起始球的直径以及压接直径的接合强度的曲线图。
图6(a)是表示所述半导体装置中的半导体元件的表面电极和起始球的接合部的样子的剖视图。
图6(b)是图6(a)的虚线部分的放大图。
图7是表示以往的半导体装置的结构的图。
其中，附图标记说明如下：
10、10a半导体装置
11基材
12基材电极
13外部电极
15半导体元件
16表面电极
17金丝(连接构件)
18起始球
19柱形凸起(stud bump)
20起始球
21毛细管(capillary)
具体实施方式
如下所述，基于附图对本发明的一个实施方式进行说明。
(半导体装置的结构)
图1是表示本实施方式的半导体装置10的一结构例的图。
如图1所示，半导体装置10具有基材11以及半导体元件15。此外，在半导体装置10中，主要举出与本发明相关的结构，图1清楚图示出这些结构。例如，虽然在图1中省略，但是，半导体装置10被密封树脂覆盖，从而被封装。
对于基材11来说，若是耐热性优良的绝缘基板，则不特别限定，例如是玻璃环氧树脂(glass epoxy)等的树脂基板。基材11在一个面上安装有半导体元件15。下面，将安装有该半导体元件15的面称为安装面。在基材11的安装面上形成有在安装有半导体元件15的区域所设置的基材电极12和在安装有半导体元件15的区域外所设置的外部电极13。外部电极13例如是引线端子，能够与半导体装置10的外部电连接并至少设置1个以上。
此外，在基材11中，在除被导电连接的部分以外的露出的部分覆盖绝缘性的阻焊剂(未图示)。另外，基材11可以具有多层结构，外部电极13可以经由内部布线而与在安装面的相反侧的面上所设置的球形状的外部连接用端子连接。
半导体元件15具有芯片形状，例如是由硅制造的半导体芯片。对于半导体元件15来说，以具有各种功能的方式，在内部形成有元件。半导体元件15在一个面上形成有至少1个以上的表面电极16。使用焊料14将半导体元件15安装在基材11的基材电极12上。此时，表面电极16的形成面朝向上侧，与该形成相反侧的面与基材电极12对置。此外，不限于焊料14，也能够使用粘结剂等。
表面电极16由导电膏形成。详细地说，表面电极16使用导电膏作为电极材料，利用针对半导体元件15的一个面的印刷来形成。作为导电膏，使用低温烧结(例如，烧结温度800℃以下)的银(Ag)膏。表面电极16和外部电极13通过引线接合的球接合由金丝17(连接构件)电连接在一起。
详细地说，如后面所述，在半导体装置10中，在将表面电极16和外部电极13连接时，使用球接合，即，在使金丝17的前端熔解并形成球状的起始球18后，一边施加负荷、超声波一边进行加热，从而进行压接。对表面电极16进行第一接合，并且，对外部电极13进行第二接合。
这样，半导体装置10具有在元件内不具有布线层的半导体元件15。作为半导体元件15，例如有太阳电池等。半导体元件15为太阳电池的情况下，半导体装置10能够构成为太阳电池面板(太阳电池模块)。
另外，在半导体装置10中，并不限于在1个基材11上安装1个半导体元件15的结构，也能够在1个基材11上安装多个半导体元件15。进而，在半导体装置10中，也可以根据用途在基材11上装载电容器或电阻器等电子部件。
(半导体装置的制造方法)
接着，针对具有所述结构的半导体装置10的制造方法进行详细地说明。
图2(a)～图2(d)是表示半导体装置10的制造过程的图。
首先，准备基材11和半导体元件15。基材11以及半导体元件15分别通过以往公知的制造方法做成即可。然后，如图2(a)所示，将半导体元件15安装在基材11上。详细地说，在基材11的基材电极12上印刷焊料膏(焊料14)。焊料膏的印刷使用钢板掩模以及刮板(squeegee)通过印刷机来进行。然后，在焊料膏上装载半导体元件15。并且，通过回流装置使焊料膏熔融、凝固，固定半导体元件15。由此，半导体元件15以表面电极16的形成面朝向上侧的方式进行安装。
接着，如图2(b)所示，对半导体元件15的表面电极16进行第一接合。详细地说，作为进行引线接合的球接合的装置，例如，使用超声波热压接式的引线接合器。引线接合器具有以能够抽出的方式保持金丝17的毛细管21。最初，熔解金丝17的前端，从而形成球状的起始球18。然后，使保持着金丝17的毛细管21移动到半导体元件15的表面电极16上并下降。然后，将热、负荷、超声波传递给金丝17，并将起始球18压接在表面电极16上。由此，起始球18接合在表面电极16上。
接着，图2(c)所示，对基材11的外部电极13进行第二接合。详细地说，在第一接合后使毛细管21上升，移动到基材11的外部电极13上并下降。此时，使金丝17适当弯曲。然后，将热、负荷、超声波传递给金丝17，并将金丝17压接在外部电极13上。由此，金丝17接合在外部电极13上。在第二接合后，使毛细管21上升，并切断金丝17。
由此，如图2(d)所示，半导体元件15的表面电极16和基材11的外部电极13通过球接合由金丝17电连接在一起。然后，同样地，对需要连接的表面电极16和外部电极13依次进行球接合。在连接工序之后，经使用模塑成型进行树脂密封等以往公知的制造工序，由此，完成半导体装置10。
如上所述，本实施方式的半导体装置10具有如下结构，即，具有形成有能够与外部电连接的外部电极13的基材11和形成有由导电膏形成的表面电极16的半导体元件15，在基材11上安装有半导体元件15，基材11的外部电极13和半导体元件15的表面电极16通过引线接合的球接合由金丝17电连接在一起。
换言之，本实施方式的半导体装置10通过如下方法做成，即，将基材11的外部电极13和半导体元件15的表面电极16通过引线接合的球接合由金丝17电连接。
因而，由于基材11的外部电极13和半导体元件15的表面电极16通过引线接合的球接合由金丝17电连接在一起，所以，由于不需要使用焊剂，因而就不需要除去焊剂所需要的工序。另外，也没必要为了接合而固定金丝17，能够确保接合可靠性的同时，能够以高速接合。因此，能够确保接合可靠性的同时，使表面电极16和外部电极13的连接方法或连接工序简化。另外，能够抑制工艺成本的增加。
此外，在上述的半导体装置10的制造方法中，作为引线接合，使用球接合，但不限于此，只要是引线接合即可。另外，为了减小接合面积而使用能够进行球接合的金丝，但是，根据电流量也可以是使用了铝线的楔形接合、使用了铝带的带接合。进而，在所述制造方法中，在球接合时对半导体元件15的表面电极16进行第一接合，但是，也可以更换接合的顺序。
图3(a)～图3(d)是表示使用球接合并将基材11的外部电极13作为第一接合的制造过程的图。
首先，如图2(a)所示，将半导体元件15安装在基材11上。然后，如图3(a)所示，在半导体元件15的表面电极16上形成柱形凸起(studbump)19。详细地说，使用引线接合器，使保持在毛细管21中的金丝17的前端溶融并成为球状。然后，使毛细管21移动到半导体元件15的表面电极16上并下降。然后，将热、负荷、超声波传递给金丝17，并将球状的前端部分压接在表面电极16上。压接后，使毛细管21上升，切断金丝17。由此，在表面电极16上形成接合在表面电极16上的柱形凸起19。
接着，如图3(b)所示，对基材11的外部电极13进行第一接合。也就是，与使用图2(b)进行说明的方法同样，在金丝17的前端形成起始球20，压接在外部电极13上。由此，起始球20接合在外部电极13上。
接着，如图3(c)所示，对在半导体元件15的表面电极16上形成的柱形凸起19进行第二接合。也就是，使进行了第一接合的金丝17适当弯曲，接合在柱形凸起19上。接合后，切断金丝17。
由此，如图3(d)所示，半导体元件15的表面电极16和基材11的外部电极13通过使用了柱形凸起19的球接合由金丝17电连接在一起。并且，同样对需要连接的表面电极16和外部电极13依次进行球接合。此外，在图3(a)所示的制造阶段，也可以在整个表面电极16上预先形成柱形凸起19。
在通过该制造方法做成的半导体装置10a中，能够降低金丝17的环的高度，实现薄型化。另外，也有利于具有半导体装置10a的各种设备的小型化。
在此，当在接合时毛细管21接触到表面电极16时，超声波以及负荷的传递受到阻碍，接合状态变得不稳定。另外，由于毛细管21的前端被污染，所以，生产性恶化，并且寿命下降。因而，需要适当调整毛细管21的移动，防止毛细管21接触到表面电极16。
但是，在半导体装置10中，半导体元件15的表面电极16通过使用了导电膏的针对半导体元件15的一个面的印刷来形成。具体地说，在半导体元件15的一个面设置网眼状的掩模，从其之上印刷导电膏。因此，由于在印刷的导电膏的表面发生起伏，所以，表面电极16的表面发生起伏。因而，即使调整毛细管21的移动也可能发生接触。
因此，在半导体装置10中，优选向表面电极16进行第一接合时的起始球18的直径以及在表面电极16形成的柱形凸起19的直径比表面电极16的起伏差更大。即，如图4所示，相比表面电极16的最厚的部分和最薄的部分之差(t1)，起始球18的直径以及柱形凸起19的直径更大。
由此，对表面电极16进行的第一接合引起的接合后的起始球18的高度(t2)比表面电极16的最厚的部分更高。另外，在表面电极上所形成的柱形凸起19的高度比表面电极16的最厚的部分更高。因而，能够防止毛细管2接触到表面电极16。
另外，在半导体装置10中，优选增大向表面电极16进行第一接合时的起始球18的直径，且增大压接起始球18时的压接直径。由此，能够提高接合可靠性。
图5是表示使起始球18的直径为60μm、75μm时的验证针对球压接直径的接合强度(球按压强度)的结果的曲线图。横轴表示球压接直径(μm)，纵轴表示球按压强度(mN)。另外，◇标记表示起始球18的直径为60μm时的结果，○标记表示起始球18的直径为75μm时的结果。
另外，在图5所示的验证中，条件如下。即，
金丝17的直径：25μm，
引线接合器的加热温度：150℃，
表面电极16的膜厚、起伏差、起伏间距：约20μm、约10μm、100μm。此外，表面电极16为对导电膏印刷烧结后的尺寸，起伏间距大体取决于掩模的网眼的粗细。
参照图5可知，起始球18的直径越大且起始球18的压接直径越大，接合强度就越高。作为一个例子，从图5可知，优选在表面电极16的起伏差约为10μm(间距100μm)的情况下，起始球18的直径为75μm，增大起始球18的压接直径。
另外，图6(a)表示用SEM观察时的表面电极16和起始球18的接合部的剖面。图6(b)是图6(a)的虚线部分的放大图。
如图6(a)以及图6(b)所示，金丝17(Au丝)未与表面电极16(导电膏)的银粉间的玻璃粉(glass frit)部分接合，但是，与银粉部分接合。因而，与针对通常的铝焊盘的接合相比较，接合部的面积减少，但如图5所示，球按压强度与球压接直径几乎成比例地提高。
因此，通过增大球压接直径，能够提高接合可靠性。但是，当起始球18的直径过大时，由于破坏表面电极16、进而破坏半导体元件15，所以，需要适当调整直径的上限。
本发明并不限于上述的实施方式，能够在技术方案所示的范围内进行各种变更。即，对于适当组合在技术方案所示的范围内适当变更的技术方法而得到的实施方式，也包含在本发明的技术范围内。
例如，在本发明的半导体装置中，优选所述连接构件为金丝。在本发明的半导体装置的制造方法中，也优选使用金丝作为所述连接构件。
另外，在本发明的半导体装置中，所述引线接合优选使用球接合。在本发明的半导体装置的制造方法中，优选使用球接合作为所述引线接合。由此，能够适当地使连接构件弯曲。
进而，为了使连接构件可靠地接合在由导电膏构成的表面电极上，在本发明的半导体装置中，优选所述球接合的第一接合对所述半导体元件的表面电极进行。在本发明的半导体装置的制造方法中，优选对所述半导体元件的表面电极进行第一接合。
此外，在本发明的半导体装置中，优选对所述表面电极进行的第一接合引起的接合后的球的高度比该表面电极的最厚的部分更高。
当接合时保持连接构件的保持工具(例如毛细管)接触到表面电极时，用于接合的超声波以及负荷的传递受到阻碍，接合状态变得不稳定。另外，由于工具的前端被污染，所以生产性恶化且寿命降低。因此，若采用所述结构，则能够防止保持连接构件的工具接触到表面电极。
另外，为了使连接构件可靠地接合在由导电膏构成的表面电极上，在本发明的半导体装置中，在所述半导体元件的表面电极上形成柱形凸起，所述球接合的第一接合对所述基材的外部电极进行，第二接合对在所述表面电极上形成的柱形凸起进行。
另外，在本发明的半导体装置的制造方法中，所述球接合也能够包括：在所述半导体元件的表面电极上形成柱形凸起的步骤；对所述基材的外部电极进行第一接合的步骤；对在所述表面电极上形成的柱形凸起进行第二接合的步骤。
此外，在本发明的半导体装置中，优选在所述表面电极上所形成的柱形凸起的高度比该表面电极的最厚的部分更高。由此，能够防止保持连接构件的(例如毛细管)接触到表面电极。
产业上的可利用性
本发明不仅适用于与将在元件内不具有布线层的半导体元件安装在基材上而成的半导体装置相关的领域，而且适用于与半导体装置的制造方法相关的领域。进而，本发明的半导体装置能够用作例如太阳电池面板(太阳电池模块)，能够良好地使用、应用作电力供给源。

Claims (12)

1.一种半导体装置，具有形成有能够与外部电连接的外部电极的基材和形成有由导电膏构成的表面电极的半导体元件，所述半导体元件安装在所述基材上，其特征在于，
所述基材的外部电极和所述半导体元件的表面电极通过引线接合由连接构件电连接在一起，
所述半导体元件是在元件内不具有布线层的太阳电池。
2.如权利要求1所述的半导体装置，其特征在于，
所述连接构件是金丝。
3.如权利要求2所述的半导体装置，其特征在于，
所述引线接合使用球接合。
4.如权利要求3所述的半导体装置，其特征在于，
所述球接合的第一接合对所述半导体元件的表面电极进行。
5.如权利要求4所述的半导体装置，其特征在于，
对所述表面电极进行的第一接合引起的接合后的球的高度比该表面电极的最厚的部分高。
6.如权利要求3所述的半导体装置，其特征在于，
在所述半导体元件的表面电极上形成有柱形凸起，
所述球接合的第一接合对所述基材的外部电极进行，第二接合对在所述表面电极上形成的柱形凸起进行。
7.如权利要求6所述的半导体装置，其特征在于，
在所述表面电极上形成的柱形凸起的高度比该表面电极的最厚的部分高。
8.一种半导体装置的制造方法，该半导体装置具有形成有能够与外部电连接的外部电极的基材和形成有由导电膏构成的表面电极的半导体元件，所述半导体元件安装在所述基材上，其特征在于，
包括将所述基材的外部电极和所述半导体元件的表面电极通过引线接合由连接构件电连接的工序，
所述半导体元件是在元件内不具有布线层的太阳电池。
9.如权利要求8所述的半导体装置的制造方法，其特征在于，
使用金丝作为所述连接构件。
10.如权利要求9所述的半导体装置的制造方法，其特征在于，使用球接合作为所述引线接合。
11.如权利要求10所述的半导体装置的制造方法，其特征在于，
对所述半导体元件的表面电极进行第一接合。
12.如权利要求10所述的半导体装置的制造方法，其特征在于，
所述球接合包括：
在所述半导体元件的表面电极上形成柱形凸起的步骤；
对所述基材的外部电极进行第一接合的步骤；
对在所述表面电极上形成的柱形凸起进行第二接合的步骤。
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