JP2009295988A - 特別に形作られたボンドワイヤを有する半導体装置およびそのような装置を製造するための方法 - Google Patents

特別に形作られたボンドワイヤを有する半導体装置およびそのような装置を製造するための方法 Download PDF

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Publication number
JP2009295988A
JP2009295988A JP2009138065A JP2009138065A JP2009295988A JP 2009295988 A JP2009295988 A JP 2009295988A JP 2009138065 A JP2009138065 A JP 2009138065A JP 2009138065 A JP2009138065 A JP 2009138065A JP 2009295988 A JP2009295988 A JP 2009295988A
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Prior art keywords
integrated circuit
bond
intermediate element
contact pad
semiconductor device
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JP2009138065A
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Pascal Stumpf
スタンフ パスカル
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TDK Micronas GmbH
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TDK Micronas GmbH
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Abstract

【課題】コストに関して従来のボンド導体よりもかなり好適なボンド導体を有する半導体装置を提供すること。
【解決手段】少なくとも２つの集積回路ＩＣ１、ＩＣ２がハウジング内に配置され且つボンド導体１０を介して互いに電気的に接続される半導体装置およびそのような半導体装置を製造するための方法に関する。ボンド導体１０のうちの少なくとも１つは、第１の集積回路ＩＣ１の接点パッド３に対して接続されるその第１の好ましくは球状端部１２を有する。楔形状に形作られるボンド導体１０の他端部１４は、好ましくは同様に球状の中間要素２０を介して第２の集積回路ＩＣ２の接点パッド６と接触される。中間要素２０は、ボンド導体１０よりも柔らかい材料から形成される。ボンド導体１０は、銅または銅合金から形成されることが好ましく、また、中間要素２０は、金または金合金から形成される。
【選択図】図１

Description

本発明は、少なくとも２つの集積回路がハウジング内に配置され且つボンド導体を介して互いに電気的に接続される請求項１のプリアンブルに係る半導体装置、および、そのような半導体装置を製造するための方法に関する。
ボンド導体またはボンドワイヤは、集積回路の製造において長い間知られてきた。一方、そのようなボンド導体は、ハウジングの外側から見える接点（ピンとも呼ばれる）をハウジング内に位置するチップに対して接続させるために集積回路のケースで使用される。この目的のため、チップは、ボンドアイランドまたはパッドと呼ばれる電気接点領域を有する。ボンド導体は、適当な集積回路と電子回路の配線基板との間の電気的な接続を行なう。一般に、ボンド導体は、チップの接点パッドから接点の内部部品へと引き込まれ、両端で機械的および電気的に接触される。サーモソニックボンディングおよび超音波ボンディングの両方が知られている。ボンディング後、集積回路は、ハウジング、好ましくはプラスチックハウジング内に密封してポッティングされる。ミクロ電子構造および接続技術におけるボンド導体は、一般に、金または金合金から形成される。アルミニウムから形成されるボンド導体も知られている。
しかしながら、ハウジング内に位置されるチップをハウジング上の外部接点と電気的に接続することはボンド導体における単なる用途ではない。ボンド導体は、ハウジング内のチップを互いに電気的に接続するためにも使用される。このため、ハウジング内に位置される集積回路はそれぞれ、そのようなボンド導体と電気的に接続される接点パッドを有する。Ｇ．Ｇ．Ｈａｒｍａｎ、Ｗｉｒｅ Ｂｏｎｄｉｎｇ ｉｎ Ｍｉｃｒｏｅｌｅｃｔｒｏｎｉｃｓ、ＭｃＧｒａｗ−Ｈｉｌｌ、１９９７、１−１０頁、６７ｆｆ頁、２０３ｆｆ頁によれば、既知のボールウェッジ技術において、ボンドワイヤは、フリーエアボール（ＦＡＢ）としても知られるフレームオフ球を使用して、第１の集積回路の接点パッドに対して結合され、また、他端は、楔形状へと平坦化されて第２の集積回路の接点パッドに対して接続される。
このボールウェッジ技術において問題なのは、第２の集積回路、すなわち、ボンドワイヤが平坦化されてその接点パッド上に対して、通常は超音波を用いて、押圧される回路の圧縮荷重である。第２の集積回路の圧縮荷重を減らすため、第２の集積回路の接点パッド上に位置する導電材料から形成されるいわゆる球状中間要素を設けることが知られている。楔形状へと平坦化されたボンド導体の第２の端部は、この球状中間要素に対して押し付けられる。この中間要素は圧力を取り除く役目を果たす。
ボンド導体は一般に金から形成されるが、金は、銅および銀よりも低い電気的特性および機械的特性を示す。この理由は、変色、すなわち、酸素接触時の銅の酸化にある。銅のこの酸化は、銅からなるボンド導体の結合能力を失わせる。このため、銅から形成されるボンド導体が使用されるときには、しばしば、銅の酸化を妨げるべくガスを遮断して結合が行なわれる。現在まで、金から形成されるボンド導体がチップ同士の接続において最良であることが分かっている。しかしながら、金から形成されるボンド導体の場合において問題なのは、金の高い価格である。集積回路の特性が益々良好となり、また、ハウジング内の実装密度が益々高まるため、半導体装置においては莫大な数のボンド導体が必要である。数百〜数千個のそのようなボンド導体が必要とされ得る。金から形成されるボンド導体が使用される場合には、コスト問題が重要となる。
このため、金から形成される高価なボンド導体を更に好適な材料と置き換える試みが既に知られてきている。
米国特許出願公開第２００３／０１１３５７４Ａ１号明細書によれば、金ワイヤと比べてコストを節約するために、金が被覆された銀またはパラジウムのワイヤが設けられている。
銅−金合金の使用も独国特許出願公開第１０２００５０１１０２８Ａ１号明細書から知られている。金と比べて、銅−金合金はかなり大きな硬度によって特徴付けられる。しかしながら、この硬度は、集積回路の接点パッド上に対するボンドワイヤまたはボンド導体の押圧によって集積回路が損傷される可能性があるため、ボンドワイヤにとって望ましくない。金−銅合金または銅ワイヤは、接点パッドに対して押圧されるときに集積回路のシリコンチップにおいてクラッキングを引き起こす可能性があり、それにより、場合によっては、集積回路の破損がもたらされる。
独国特許出願公開第１０２００５０１１０２８Ａ１号明細書は、その表面に少量の金が含められる銅から形成されるボンド導体を更に提案する。上記公報は、金がコーティングとしてワイヤ上に均一に形作られる場合には、多くて５０、特に多くて５０ｎｍの被覆に対応する量で表面中に金が濃縮された銅からなるボンド導体が特に好ましいことを提案している。
ボンド導体としてのそのような金がコーティングされた銅ワイヤに伴う問題点は、そのような金コーティングの銅ワイヤの製造が比較的高価であり、それにより、この場合も同様にコストが増大されるという点である。
米国特許出願公開第２００３／０１１３５７４Ａ１号明細書 独国特許出願公開第１０２００５０１１０２８Ａ１号明細書
したがって、本発明の目的は、コストに関して従来のボンド導体よりもかなり好適なボンド導体を有する半導体装置を提供することである。
この目的は、請求項１の特徴を有する半導体装置を用いて達成される。
この半導体装置の進展が従属請求項の主題である。
そのような半導体装置を製造するための方法が請求項１０の主題である。この方法は、以下のステップ、すなわち、
少なくとも１つの第１の接点パッド（３）を有する第１の集積回路（ＩＣ１）を設けるステップと、
少なくとも１つの第２の接点パッド（６）を有する第２の集積回路（ＩＣ２）を設けるステップと、
前記第１の接点パッド（３）と前記第２の接点パッド（６）とを電気的に接続するためのボンド導体を設けるステップと、
導電性の中間要素（２０）が前記第２の集積回路（ＩＣ２）の前記第２の接点パッド（６）と導電接続する態様で、前記第２の集積回路（ＩＣ２）の前記第２の接点パッド（６）上に導電性の前記中間要素（２０）を加えるステップと、
前記ボンド導体（１０）の前記第１の端部（１２）を前記第１の集積回路（ＩＣ１）の前記第１の接点パッド（３）に対して機械的に取り付けるステップと、
前記ボンド導体（１０）の第２の楔形状端部（１４）を前記中間要素（２０）に対して機械的に取り付けるステップと、
を有し、
前記中間要素（２０）の材料が、前記ボンド導体（１０）の材料よりも柔らかいように選択される。
この方法請求項の進展が請求項１１〜請求項１３に記載される。
本発明に係る半導体装置は、金よりもかなり好適な統一的材料から形成されるボンド導体を使用できるという点で区別される。複雑な方法で製造され且つ例えば、金でコーティングされるボンド導体の使用は、本発明によって不必要にされる。これは、例えば、銅または銅合金から形成されるボンド導体の楔形状端部が例えば、アルミニウムまたはアルミニウム合金から形成される集積回路の接点パッド上に直接に加えられず、その代わり、ボンド導体のこの楔形状端部が集積回路の接点パッド上に位置する中間要素に加えられて接触されるという点で達成される。中間要素は、球形状または略球形状に形作られることが好ましく、また、ボンド導体よりも柔らかい材料から形成される。中間要素は、金、金合金、または、ドープされた金から形成されることが好ましい。
中間要素は、ボンド導体の楔形状端部と集積回路の接点パッドとの間に配置されるため、ボンド導体の楔形状端部が押圧される圧力は、集積回路の半導体へ直接に伝えられず、最初に中間要素によって捉えられる。したがって、集積回路の機械的な荷重は、ボンド導体の楔形状端部が集積回路の接点パッドに対して直接に押し付けられる従来の方法と比べてかなり減少される。
ボンド導体が共通のハウジング内に組み込まれる２つの集積回路の接点パッドと接触することは本発明の範囲内に入る。２つの集積回路は、互いに隣り合って或いは互いに上下に配置することができる。ボンド導体は、２０〜３０μｍの直径およびヴィッカース硬度＜７０を有することが好ましい。
以下、例示的な実施形態と関連して且つ図面を参照して、本発明に係る半導体装置およびその製造方法について更に詳しく説明する。
２つの集積回路ＩＣ１、ＩＣ２がハウジング内に互いに隣り合って配置され且つボンド導体によって接続される第１の例示的な実施形態を示している。 ハウジング内に互いに上下に配置され且つ同様にボンド導体を介して互いに電気的に接続される２つの集積回路を示している。 図１および図２のボンド導体の楔形状端部の領域における図１または図２のボンド導体の走査型電子顕微鏡写真である。
以下の図面中、反対のことが述べられていなければ、同一の参照符号は、同一の意味を伴う同一の部分を特定している。
図１は、集積半導体装置のハウジング１を示している。２つの集積回路ＩＣ１、ＩＣ２がハウジング内に互いに隣り合って位置している。第１の集積回路ＩＣ１は、接点パッド３を有する第１の半導体本体２を有し、これらの接点パッド３のうちの１つが図１で認識できる。半導体本体２は、例えば、シリコンから形成されており、アルミニウムまたはアルミニム合金から形成することができる接点パッドをその表面上に有する。第２の集積回路ＩＣ２は第２の半導体本体５を有し、第２の半導体本体の上面には同様に接点パッド６を認識することができる。集積回路ＩＣ１、ＩＣ２の接点パッド３、６は、半導体装置の電気的要件にしたがってボンド導体１０により互いに電気的に接続される。これらのボンド導体１０のうちの１つが図１に示されている。ボンド導体１０は、コストの観点から金よりもかなり好適な材料によって形成される。例えば、銅または銅合金がボンド導体１０のための材料として適している。
ボンド導体１０は、既知のボールウェッジ方法（ボールウェッジボンディング）によって第１の集積回路ＩＣ１と接触される。他の接触方法も可能である。ボールウェッジボンディングでは、焼結金属またはセラミックからなる毛細管内でボンド導体１０を案内するために適切な工具が使用される。毛細管の底部から突出するボンド導体１０の端部は、表面張力の結果として球が形成するように火炎または放電によって溶融される。この球は、圧力、熱、および、超音波によって第１の集積回路ＩＣ１の半導体本体２の接点パッド３に対して結合される。球は毛細管によってある程度まで広げられ、それにより、釘の頭のようなものが生じる。ボンド導体１０のこの球状端部が図１に参照符号１２で特定されている。
ボンド導体１０は、次いで、第２の接触点へと、図１の例示的な実施形態では第２の集積回路ＩＣ２の半導体本体５の接点パッド６へと導かれる。しかしながら、従来技術とは異なり、ボンド導体１０は接点パッド６上に直接に押圧されない。その代わり、好ましくは球形状または少なくとも略球形状の中間要素２０が前の処理ステップで接点パッド６上に配置される。この中間要素は、ボンド導体１０よりも柔らかい材料、例えば、ボンド導体１０のために銅が使用される場合には銅よりも柔らかい材料から形成される。金、金合金、または、ドープされた金が適した材料であることが分かっている。
このように、ボンド導体１０は、中間要素２０がその上に配置された接点パッド６へと導かれる。ボンド導体１０は、中間要素２０上にセットされて、超音波、熱、および、圧力によって中間要素２０に対して強固に結合される。ボンディング工具の毛細管よりも上側に装着されたワイヤクランプは、工具が持ち上げられるときにそれに沿ってボンド導体１０が引っ張られることを防止する。その代わり、ボンド導体１０が中間要素２０の領域で破断される。生成されるものは、中間要素２０に対して電気的に接続されるボンド導体１０の楔形状端部１４である。
この球状中間要素２０は、例えば、第２の工具を用いて第２の集積回路ＩＣ２の半導体本体５の接点パッド６上に配置させることができる。第２の工具は、焼結金属またはセラミックから形成される毛細管であってもよい。ボンド導体１０の球状端部１２の成形の場合と同様に、例えば、金ワイヤがこの第２の工具の毛細管を通じて導かれ、また、球またはボールが表面張力の結果として形成されるように、第２の工具の毛細管の底部から突出する金ワイヤ端部を火炎または放電を用いて溶融させることができる。金ワイヤのこの球またはボールは、圧力、熱、および、超音波によって第２の集積回路ＩＣ２の半導体本体５の接点パッド６上に配置される。次いで、金ワイヤは、接点パッド６上に留まる全てがピン形状延在部を有する球状中間要素２０となるように工具によって破断される。
図２は、図１の半導体装置に類似する半導体装置を示している。しかしながら、違いは、第２の集積回路ＩＣ２の半導体本体５が第１の集積回路ＩＣ１の半導体本体２上に直接に位置している点である。第２の集積回路ＩＣ２の接点パッド６は、銅からなるボンド導体１０によって第１の集積回路ＩＣ１の接点パッド３に対して接続される。ボンド導体１０の球状端部１２は第１の集積回路ＩＣ１の接点パッド３上に位置しており、一方、ボンド導体１０の楔形状端部１４は中間要素２０を介して第２の集積回路ＩＣ２の接点パッド６上に位置している。
図１および図２は第１の集積回路ＩＣ１と第２の集積回路ＩＣ２とを電気的に接続するための単一のボンド導体１０のみを示しているが、ハウジング１内で集積回路を電気的に接続するためには多数のそのようなボンド導体が設けられなければならないことを理解されたい。例えば、そのようなボンド導体１０が数百個存在する場合がある。
図３は、そのような３つのボンド導体１０を、これらのボンド導体が中間要素２０を介して集積回路の接点パッド６に対して電気的に接触されるように、ボンド導体の楔形状端部１４の領域で示している。図３には長方形の接点パッド６が明確に認識できる。接点パッド６上には、好ましくは金から形成される中間要素２０が位置している。この中間要素２０は、走査型電子顕微鏡写真ではもはや球状として認識することができないが、その上側にピン形状延在部２０ｂが位置される皿形状部２０ａが接点パッド上に直接に存在しているように見える。中間要素２０の皿形状部２０ａおよびピン形状延在部２０ｂは互いに一体に接続され、また、走査型電子顕微鏡写真においてのみ、あたかも２つの要素が存在しているかのように見える。しかしながら、これが実情ではない。ピン形状延在部２０ｂを有する皿形状部２０ａは、工具の毛細管が球形状を成した中間要素２０を幾らか圧縮し、また、金ワイヤが破断されるときにこの球形状要素２０上に小さな部分が留まるという点で生じる。球状部２０ａから突出したままのこの小さな部分が図３ではピン形状延在部２０ｂである。
１ ハウジング
２ 半導体本体
３ 接点パッド
５ 半導体本体
６ 接点パッド
１０ ボンド導体
１２ 球状端部
１４ 楔形状端部
２０ 球状中間要素
ＩＣ１ 第１の集積回路
ＩＣ２ 第２の集積回路

Claims (13)

  1. 少なくとも２つの第１、第２の集積回路（ＩＣ１、ＩＣ２）がハウジング内に配置され且つ複数のボンド導体（１０）を介して互いに電気的に接続される半導体装置であって、
    前記複数のボンド導体（１０）のうちの少なくとも１つが、前記第１の集積回路（ＩＣ１）の第１の接点パッド（３）に対して電気的に接続される第１の端部（１２）と、前記第２の集積回路（ＩＣ２）の接点パッド（６）上に位置する導電性の中間要素（２０）に対して電気的に接続される楔形状を成して先細る第２の端部（１４）とを有し、前記１つのボンド導体（１０）が前記中間要素（２０）とは異なる材料から形成され、前記中間要素（２０）の材料が前記１つのボンド導体（１０）の材料よりも柔らかいことを特徴とする半導体装置。
  2. 前記ボンド導体（１０）の材料が銅または銅合金である、請求項１に記載の半導体装置。
  3. 前記中間要素（２０）が金、金合金、または、ドープされた金から形成される、請求項１または２に記載の半導体装置。
  4. 前記中間要素（２０）が球形状または略球形状を成す、請求項１〜３のいずれか一項に記載の半導体装置。
  5. 前記ボンド導体（１０）の第１の端部（１２）が球形状または略球形状を有する、請求項１〜４のいずれか一項に記載の半導体装置。
  6. 前記ボンド導体（１０）が約２０〜３０μｍの直径を有する、請求項１〜５のいずれか一項に記載の半導体装置。
  7. 前記ボンド導体（１０）の材料がヴィッカース硬度≦７０を有する、請求項１〜６のいずれか一項に記載の半導体装置。
  8. 前記第１の集積回路（ＩＣ１）および前記第２の集積回路（ＩＣ２）が互いに隣り合って配置される、請求項１〜７のいずれか一項に記載の半導体装置。
  9. 前記第１の集積回路（ＩＣ１）および前記第２の集積回路（ＩＣ２）が互いに上下に配置され、前記第２の集積回路（ＩＣ２）が前記第１の集積回路（ＩＣ１）上に位置する、請求項１〜７のいずれか一項に記載の半導体装置。
  10. 請求項１〜９のいずれか一項に記載の半導体装置を製造するための方法であって、
    少なくとも１つの第１の接点パッド（３）を有する第１の集積回路（ＩＣ１）を設けるステップと、
    少なくとも１つの第２の接点パッド（６）を有する第２の集積回路（ＩＣ２）を設けるステップと、
    前記第１の接点パッド（３）と前記第２の接点パッド（６）とを電気的に接続するためのボンド導体を設けるステップと、
    導電性の中間要素（２０）が前記第２の集積回路（ＩＣ２）の前記第２の接点パッド（６）と導電接続する態様で、前記第２の集積回路（ＩＣ２）の前記第２の接点パッド（６）上に導電性の前記中間要素（２０）を加えるステップと、
    前記ボンド導体（１０）の前記第１の端部（１２）を前記第１の集積回路（ＩＣ１）の前記第１の接点パッド（３）に対して機械的に取り付けるステップと、
    前記ボンド導体（１０）の第２の楔形状端部（１４）を前記中間要素（２０）に対して機械的に取り付けるステップと、
    を有し、
    前記中間要素（２０）の材料が、前記ボンド導体（１０）の材料よりも柔らかいように選択される、方法。
  11. 前記第２の接点パッド（６）がアルミニウムまたはアルミニウム合金から形成される、請求項１０に記載の方法。
  12. 前記中間要素（２０）は、球状または略球状の要素として前記第２の集積回路（ＩＣ２）の前記第２の接点パッド（６）に対して加えられる、請求項１１に記載の方法。
  13. 前記ボンド導体（１０）は、前記ボンド導体（１０）の前記第１の端部（１２）が前記第１の集積回路（ＩＣ１）の前記第１の接点パッド（３）上に球として溶融され、且つ前記ボンド導体（１０）の前記第２の楔形状端部（１４）が楔ボンドとして形作られるという点で、前記第１の集積回路（ＩＣ１）および前記第２の集積回路（ＩＣ２）に対してボールウェッジボンディングによって取り付けられる、請求項１１または１２に記載の方法。
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