CN107230668B - 用于在导线键合的半导体器件中稳定引线的结构和方法 - Google Patents

用于在导线键合的半导体器件中稳定引线的结构和方法 Download PDF

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CN107230668B
CN107230668B CN201710172477.1A CN201710172477A CN107230668B CN 107230668 B CN107230668 B CN 107230668B CN 201710172477 A CN201710172477 A CN 201710172477A CN 107230668 B CN107230668 B CN 107230668B
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lead
thickness
pad
leads
wire
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CN107230668A (zh
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D·B·麦洛
M·G·R·皮恩拉克
B·J·L·维拉卡洛斯
J·G·卡亚拜
J·C·A·里曼多
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Texas Instruments Inc
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Texas Instruments Inc
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Abstract

一种半导体器件具有引线框架，该引线框架包括由细长引线(110)包围的焊盘(101)，这些引线(110)通过间隙(113)与焊盘隔开并且延伸到框架，焊盘和引线具有第一厚度并且具有第一表面和与第一表面相对且平行的第二表面；引线具有接近间隙的第一厚度的第一部分(112)和接近框架的第一厚度的第二部分(111)，以及在第一部分与第二部分之间的减小的第二厚度的区域；第一引线部分的第二表面与第二部分的第二表面(111a)共面。具有端子的半导体芯片被附连到焊盘。从端子到相邻引线的金属导线连接包括附连到引线的第一表面的针脚式键合。

Description

用于在导线键合的半导体器件中稳定引线的结构和方法
技术领域
本发明的实施例总体涉及半导体器件和工艺领域，并且更具体地涉及引线框架的结构以及通过自支撑引线和临时柔顺的接口进行键合和成型操作的方法。
背景技术
在半导体器件制造中频繁实践的技术中，半导体芯片被附连到引线框架的焊盘，然后通过使用由铜、金或铝制成的直径为大约25μm的导线的导线键合技术将芯片端子连接到相应的引线。在使用自动键合器的导线键合工艺中，导线被捆扎穿过具有适用于引导金属导线的细孔的陶瓷毛细管。在从毛细管尖端突出的导线末端处，通过使用火焰或火花技术融化导线末端来产生无空气球。该球具有大约1.5倍导线直径的典型直径。将毛细管朝向芯片端子移动，通过压力且通常结合发射超声能量时该球相对于焊盘的超声运动来抵靠焊盘的金属化层按压该柔性球。该键合工艺导致金属钉头或压扁的球通过金属间化合物(金属间键合)被附连到芯片焊盘。
在球附连之后，带有导线的毛细管被提起以跨过从球到引线框架的引线之间的拱形。引线框架已经通过从金属板冲压或蚀刻提前制造；长引线通常已经用半蚀刻技术生产。当导线接触引线表面时，抵靠导线按压毛细管尖端以便抵靠引线将其压平，因此形成至引线的针脚式(或楔形)键合。该附连工艺形成金属相互扩散或焊接点(扩散键合)。基于毛细管尖端的几何形状，毛细管在被附连的导线的压扁部分中留下印记。毛细管再次上升到足够的高度以显示导线的长度具有足够的金属以形成下一个球。然后，启用撕裂方法以便在接近针脚式键合的端头处折断导线并且留下裸露的导线长度悬挂于毛细管尖端以准备下一个球成形融化步骤。
近期应用需要半导体器件在顶部引线框架表面和底部引线框架表面上提供不同的导电迹线图案。产生这些不同的迹线图案的常用技术是所谓的引线框架的半蚀刻(部分蚀刻)工艺。作为半蚀刻的副作用，细长的引线可能对于其长度的一部分来说损失其大约一半的厚度，其后果是在针脚式键合工艺中，半蚀刻的引线可能不能够承受毛细管对导线施加的压力；引线变得弯曲或损坏。
为了创建机械支撑，整个引线框架可能经受预成型工艺，其中半蚀刻长引线周围的空间由聚合化合物填满并且因此被加强。然而，这些所谓的预成型引线框架是昂贵的。
发明内容
当申请人研究已封装的半导体器件中的电气故障时，他们发现根本原因在于使用具有半蚀刻的细长引线的引线框架的导线键合器件中较差的针脚式键合附着或甚至提升的针脚式键合。分析显示导线至引线的不稳定键合是由于细长引线和加热块之间的间隙引起的，其中在针脚式键合工艺期间引线已被放在该加热块上用于支撑。该间隙诱发引线的微跳动并导致针脚处的提升导线或较差的针脚附着。转而，该间隙源自于在半蚀刻引线的过程期间在蚀刻容差的下限处产生的引线，或者源自于由于引线起始于蚀刻容差的上限而引起的在加热块上倾斜的引线。在后一种故障模式中，即使封装工艺的成型操作也可能产生故障，因为倾斜的引线可能允许模压树脂蔓延到裸露的引线上并且导致封装期间的树脂闪燃。
当申请人发现在需要立即补救的情况下以及另外允许足够的时间来修改引线框架的引线配置的情况下提供解决方案的方法时，其解决了失效的针脚式键合的问题。
短语“补救”包含一种方法，其中柔顺的补偿物被放置在用于预热具有附连芯片的引线框架的加热块上，以便达到球键合工艺所需要的温度。补偿物(诸如基于聚酰亚胺的柔顺聚合物)被定制成形以便在键合工艺期间支撑多个半蚀刻的细长引线，使得将被键合的引线表面变得与其上已附连了芯片的焊盘表面共面。
产生可靠的针脚式键合的解决方案涉及引线框架结构的修改。在该引线框架中，焊盘被细长引线包围，这些细长引线通过间隙与焊盘隔开并且延伸到框架。引线框架金属的支撑件被添加到间隙附近的引线的尖端，使得引线可以在整个针脚式键合过程中在热载台上保持无振动。在该支撑结构的实施例中，焊盘和引线由基底金属板制成，该基底金属板具有第一厚度并且具有第一表面和与第一表面相对且平行的第二表面，其中引线具有接近间隙的第一厚度的第一部分和接近框架的第一厚度的第二部分，以及在第一部分和第二部分之间的减小的第二厚度的区域。在该实施例中，第一引线部分具有带有可键合冶金的第一表面和与第二部分的第二表面共面的第二表面。
附图说明
图1A示出具有根据本发明的结构的典型引线框架的底部透视图，其用于在导线键合过程使细长引线稳定。
图1B示出图1A的引线框架的一部分的放大视图。
图2描绘具有引线框架的导线键合封装的半导体器件的横截面，其中引线框架具有细长引线和用于导线键合工艺的稳定结构。
图3示出导线键合装配在引线框架上的半导体芯片的工艺，其中该引线框架被放置在具有在导线键合工艺期间支撑细长引线的特征部的加热块上。
图4是用于通过在加热块上使用柔顺补偿物而在半蚀刻引线上制造自动防故障的(fail-safe)针脚式键合的工艺流程图。
具体实施方式
本发明的实施例是在具有被装配在支撑件(诸如金属引线框架)上并且被密封在聚合化合物的封装件中的半导体芯片的器件中发现的。图1A示出包含用于在半导体器件制造中装配半导体芯片的标记为100的引线框架的示例性实施例。引线框架100是从底部角度观看的。
引线框架100包括用于装配半导体芯片的焊盘101、将焊盘101连接到框架150的系杆或条带102以及包围焊盘101的多个细长引线110。如图1A和图1B所示，细长引线110的一个端头112面对焊盘101，但是通过间隙113与焊盘101隔开。在图1A的示例中，引线110的形状是细长扁平的引线，其中一个扁平端头远离且背向焊盘101。端头111被增厚并且具有将从最终封装件的密封材料中突出的表面111a；这种引线用于方形扁平无引线(QFN)器件或小外形无引线(SON)器件。扁平端头的突出表面在图1B中被标记为111a。应该注意，在一些器件系列中，由于焊盘101和引线110可能不在同一平面中，条带102可以包括弯曲部和台阶。
引线框架优选由基底金属的扁平板制成，该基底金属选自于包括铜、铜合金、铝、铝合金、铁镍合金以及科伐合金(Kovar)的群组。对于很多器件来说，引线框架基底金属的平行表面被处理以产生用于粘附到塑料化合物(尤其是成型化合物)的强亲和力。作为一个示例，由于已知氧化铜表面表现出对成型化合物的良好粘附，因此铜引线框架的表面可以被氧化。其他方法包括表面的等离子处理或在基底金属表面上沉积其他金属的薄层。作为铜引线框架的一个示例，已经使用锡的镀层，或者镍层(大约0.5μm至2.0μm厚)及随后的钯层(大约0.01μm至0.1μm厚)以及可选择的随后最外面的金层(0.003μm至0.009μm厚)。
图1B中一些引线的放大图示出引线110具有面对间隙113朝向焊盘101的端头件112。增厚的端头件112的表面112a与增厚的端头件111(厚度115)的表面111a共面。这是由于表面111a和112a来源于在(通过蚀刻、冲压或压印)产生下移段(downset)114之前为连续的初始金属板的表面。形成减薄区域114(厚度116)用于以下双重目的，即生成可能在一个引线表面上与相对的表面相比为不同的表面轮廓，以及产生更大的面积和机械握力以增强聚合封装化合物和金属引线框架表面之间的粘附。
如图2所示，示例性引线框架100旨在用于导线键合(尤其是球形键合)以便将芯片200的端子与引线110电互连。用于键合的导线230优选由铜、金、铝及其合金制成并且具有大约25μm的直径。导线、芯片以及引线框架焊盘和引线的一些部分被密封在优选由填料填满的聚合化合物制成的封装件260中。
如图3所指示，导线键合过程可以开始于将半导体芯片定位在加热基座350上以便使温度上升到150℃至300℃之间。对于铜和铝导线，球成形和键合可能需要在还原性气氛(诸如干氮气和百分之几的氢气)中执行。对于该过程，导线被捆扎穿过自动键合器的毛细管。毛细管是惰性材料(诸如陶瓷)的细长管，其具有适用于引导在15μm至33μm的直径范围内的金属导线的细孔(严格意义上的毛细管)。在从毛细管尖端突出的导线端头处，通过使用火焰或火花技术融化导线端头来产生无空气球(free air ball)。该球具有大约1.2～1.6个导线直径的典型直径。将毛细管朝向作为附连焊盘的芯片端子321移动。端子321可以是铝和铜的合金。通过压力且通常结合发射超声能量并形成金属间化合物层(大约50nm至100nm的厚度)的该球相对于焊盘的超声运动将该软球压在金属化焊盘321上。该压缩力(也称为Z力或压平力)通常在大约17～75克力/平方厘米(大约1670～7355Pa)之间；超声时间在大约10～30ms之间；超声功率在大约20～50mW之间。该键合过程导致金属钉头或压扁的球231具有金属间化合物(“金属间键合”)。
与球形键合不同，针脚式键合232(有时称为楔形键合)通过将导线230压到引线的金属上(优选为铜或者钯或金镀层)来产生。对于引线温度稍微低于加热基座温度(即150℃至300℃)的情况，由于未提供超声振荡，因此仅产生用于针脚式键合的金属间扩散。应该指出，本文中这种类型的键合被称为“扩散键合”，以区别于金属间键合。基于毛细管尖端的几何形状，毛细管在所附连导线的扁平部分中留下印记。具有从圆导线到扁平导线的转变的导线部分是弯曲的并且被称为针脚式键合的足部。
如上所述，为了成功的针脚式键合所要实现的互相扩散要求通过毛细管对导线施加压力并且引线310能够承受该压力。否则，对于具有既细长又(通过半蚀刻)减小厚度的部分311的引线310，部分311的弹性强度可能不足以抵消该压力。如果产品开发周期将不允许有足够的时间来重新设计包括增厚端头112(见图1B)的引线，则可以通过位于细长引线310的端头部分311下方的补偿材料340立即获得用于引线311的替代支撑件。
材料340是耐热且非粘性的聚合物，其可以容易地形成(例如通过从聚合物板切出一些配置)以便以适于在将针脚式键合附连到引线的过程期间支撑多个半蚀刻引线的几何配置安装在热载台上。该材料需要足够柔顺，使得其高度可以在压力下被(毛细管)调整以补偿由半蚀刻工艺导致的引线间的任何高度差。该聚合材料表现为自调整件或自动补偿物。结果，在针脚式附连工艺中，全部引线以相同的正确高度出现，并且因此允许形成可靠的针脚式键合。
在图3的示例中，聚合材料340可以被形成为搁置在热载台350上的方形环，以便在包围焊盘101并且由间隙113隔开的所有四个边上支撑半蚀刻引线311(见图1A)。当毛细管对引线311施加压力以便形成针脚式键合时，引线311的表面311a与焊盘101的表面101a基本共面。
在针脚式键合附连之后，毛细管可以折断导线，或者带有导线的毛细管可以被提升以跨过从球203到衬底或引线框架上的焊盘205的拱形204。当导线接触焊盘表面时，毛细管尖端被压到导线上以便将其压平并且因此形成针脚式键合206，有时被称为楔形键合。
毛细管再次上升到足够的高度以显示具有足以形成下一个球的金属的导线长度。然后，启用撕裂方法以便在接近针脚式键合的端头处折断导线并且留下裸露的导线长度悬挂于毛细管尖端以准备下一个球成形融化步骤。通常采用各种导线折断方法，其中有所谓的夹钳撕裂方法和夹台撕裂方法。
标准化键合拉力测试(以克-力(gram-force)为单位测量拉力)被用于标定球形键合和针脚式键合的强度。测量键合质量的拉力测试可以通过在大量标准化加速寿命测试、湿度测试和电应力测试中任意一个之后测量可靠性的拉力测试而重复。
本发明的另一个实施例是图4中概述的用于稳定导线键合的半导体器件中的引线的方法。该方法开始于提供加热块的过程401，该加热块适用于在键合过程中机械地支撑引线框架并且提供热量以使引线框架达到规定的温度。
在下一个过程402中，层状、耐热、非粘性并且柔顺的聚合物材料的工件被定位在加热块上，以便这些工件能够支撑引线框架的半蚀刻引线的端头部分。这些工件被调整以适配在半蚀刻引线组下面，同时保持引线框架焊盘与附连的半导体芯片之间的间隙。在其作为引线支撑件的位置处，材料是足够柔顺的，以补偿引线的任意过蚀刻或欠蚀刻，并且因此在键合器毛细管的压力下产生必要的阻抗强度外加引线的表面和芯片焊盘的表面之间的共面性。
在过程403中，引线框架被放置在加热块上以使得半蚀刻引线搁置在柔顺的补偿物上并且获得必要的支撑，从而补偿引线的任何过蚀刻或欠蚀刻。一些加热块部分地作为硬支撑(诸如加热块的台阶)并且部分地作为柔顺的补偿物来为半蚀刻引线提供支撑。
在过程404中，针脚式键合通过将键合导线附连到与补偿物相对的半蚀刻引线表面来形成。如上所述，在由毛细孔对导线和引线施加的压力下，引线和焊盘的表面(分别是图3中的311a和101a)变得基本共面。然而，应该指出，在其他引线框架中，引线和焊盘的表面可以在不同的平面中，有意地由台阶分开以便保证用于防止导线短接到半导体芯片的向上(uphill)键合。
尽管已参考说明性实施例描述了本发明，然而该说明书不旨在被解释为限制意义。本领域技术人员在参考本说明书之后将会明白说明性实施例的各种修改和组合以及本发明的其他实施例。作为一个示例，本发明不仅应用于具有低引脚数和高引脚数的有源半导体器件，诸如晶体管和集成电路，而且还应用于引线框架焊盘上的有源和无源元件的组合。
作为另一个示例，本发明不仅应用于硅基半导体器件，而且还应用于使用砷化镓、氮化镓、硅锗以及工业中采用的任何其他半导体材料的器件。本发明应用于QFN和SON类型的引线框架以及具有悬臂式引线的引线框架。
作为另一个示例，本发明应用于引线框架、层叠衬底以及任何其他衬底或支撑结构，这些衬底或支撑结构包括局部减小厚度的导体(诸如悬臂式引线和适用于金属相互扩散和焊接的冶金表面配置)。
因此，旨在使附加权利要求包含任何此类修改或实施例。

Claims (12)

1.一种引线框架，其包含：
由细长金属引线包围的金属焊盘，其中所述引线通过间隙与所述焊盘隔开并且延伸到框架；
由基底金属板制成的所述焊盘和所述引线具有第一厚度并且具有第一表面和与所述第一表面相对且平行的第二表面；
所述引线的每个具有接近所述间隙的第一部分和接近所述框架的第一厚度的第二部分，以及在所述第一部分与所述第二部分之间的减小的第二厚度的区域，其中所述第一部分包括跨越所述引线的宽度的两个分部，其中第一分部具有第一厚度，第二分部具有不同于所述第一厚度的第二厚度；
其中所述第一部分具有带有能够键合冶金的第一表面以及与所述第二部分的所述第二表面共面的第二表面。
2.根据权利要求1所述的引线框架，其中所述基底金属选自包括铜、铜合金、铝、铝合金、铁镍合金和科伐合金的群组。
3.根据权利要求2所述的引线框架，其中所述能够键合冶金包括镀覆在所述基底金属上的一层镍和镀覆在所述镍层上的一层钯。
4.根据权利要求3所述的引线框架，其中所述能够键合冶金进一步包括镀覆在所述钯层上的一层金。
5.一种半导体器件，其包含：
引线框架，其包含由细长引线包围的焊盘，所述引线通过间隙与所述焊盘隔开并且延伸到框架，由基底金属板制成的所述焊盘和所述引线具有第一厚度并且具有第一表面和与所述第一表面相对且平行的第二表面，所述引线的每个具有接近所述间隙的第一部分和接近所述框架的第一厚度的第二部分以及在所述第一部分与所述第二部分之间的减小的第二厚度的区域，其中所述第一部分包括跨越所述引线的宽度的两个分部，其中第一分部具有第一厚度，第二分部具有不同于所述第一厚度的第二厚度，所述第一部分的所述第二表面与所述第二部分的所述第二表面共面；
附连到所述焊盘的所述第一表面的半导体芯片，所述芯片具有端子；以及
从所述端子到相邻引线的所述第一表面的金属导线连接，所述连接包括附连到所述引线的所述第一表面的针脚式键合。
6.根据权利要求5所述的器件，其中所述针脚式键合包括扩散键合。
7.根据权利要求6所述的器件，其进一步包括密封所述芯片、导线连接件以及至少一部分所述细长引线的聚合化合物的封装件，所述化合物附着到被密封的实体的材料上。
8.一种用于针脚式键合到稳定的引线上的方法，其包含：
提供引线框架，所述引线框架包括由布置成图案的细长引线包围的焊盘，每个引线具有接近所述焊盘的减小厚度的部分；
将柔顺、非粘性的耐热材料以一种配置定位在加热块上以支撑所述细长引线的所述减小厚度的部分；
将所述引线框架放置在所述加热块上，其中所述引线的所述减小厚度的部分被搁置在所述柔顺材料上；
将半导体芯片附连到所述焊盘，所述芯片具有端子；以及
将导线键合到所述端子，使所述导线跨越到相应的引线，并且在所述引线的所述减小厚度的部分上形成针脚式键合。
9.根据权利要求8所述的方法，其中所述针脚式键合是基于金属相互扩散的扩散键合。
10.根据权利要求9所述的方法，其中所述导线选自包括铜、铜合金、金和铝及其合金的群组。
11.根据权利要求10所述的方法，其中到所述端子的所述键合是球形键合，每个球形键合包括形成无空气球、将所述球压扁到相应的芯片端子上以及形成球形键合的过程。
12.根据权利要求11所述的方法，其中所述球形键合基于形成金属间层。
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