CN101604667A - 具有特殊结构的跨接导线的半导体布置结构及其制造方法 - Google Patents

具有特殊结构的跨接导线的半导体布置结构及其制造方法 Download PDF

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CN101604667A
CN101604667A CNA2009102038587A CN200910203858A CN101604667A CN 101604667 A CN101604667 A CN 101604667A CN A2009102038587 A CNA2009102038587 A CN A2009102038587A CN 200910203858 A CN200910203858 A CN 200910203858A CN 101604667 A CN101604667 A CN 101604667A
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cross
over connection
integrated circuit
connection lead
bonding pad
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CN101604667B (zh
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P·施通普夫
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TDK-MICRONAS Ltd
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MEIKENAS CO
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Abstract

本发明涉及一种半导体布置结构和一种用于制造这种半导体布置结构的方法，具有两个设置在一个壳体内的集成电路(IC1、IC2)，它们通过跨接导线(10)相互导电连接。至少一个跨接导线(10)利用其最好球形的第一末端(12)连接在第一集成电路(IC1)的连接区上。跨接导线(10)另一个设计成楔形的末端(14)与第二集成电路(IC2)的连接区(6)通过同样最好球形的中间件(20)连接。中间件(20)由比跨接导线(10)更软的材料组成。优选跨接导线(10)由铜或者铜合金和中间件(20)由金或者金合金组成。优点：降低集成电路的材料成本。

Description

具有特殊结构的跨接导线的半导体布置结构及其制造方法
技术领域
本发明涉及一种根据权利要求1的前序部分所述的半导体布置结构，具有至少两个设置在一个壳体内的集成的电路，所述电路通过一(焊点)跨接导线(Bondleitung)相互电连接，以及涉及一种用于制造这种半导体布置结构的方法。
背景技术
跨接导线或者焊线在制造集成电路方面早已公知。这种跨接导线一方面用于在集成电路中将壳体外部可见的接线端(也称为“引脚(pin)”)与壳体内部的芯片连接。芯片为此具有电连接区，即所谓的“焊点岛”或者“Pads”。利用跨接导线在实际的集成电路与电子电路的接线载体之间产生导电连接。一般情况下，跨接导线从芯片的连接区/连接焊盘分布到接线端的内部并机械和导电连接在两个部位上。公知所谓的热超声联接(焊接)和超声波联接(焊接)。联接之后，将集成电路密封地浇注(封装)到一壳体内，最好是塑料壳体。在微电子制造技术和连接技术中，跨接导线大多由金或者金合金组成。也已知铝制成的跨接导线。
但跨接导线不仅用于将处于壳体内的芯片与壳体上的外部的接线端导电连接。跨接导线也用于将壳体内部的芯片相互导电连接。为此处于壳体内的集成电路分别具有与这种跨接导线导电连接的连接区。按照G.G.Harman的“Wire Bonding in Microelectronics”，McGraw-Hill，1997，第1-10页、第67页及以下几页和第203页及以下几页，在公知的球形-楔形方法中，焊线借助于也称为Free-Air-Ball(FAB)的燃烧的球体联接在第一集成电路的连接区上并在另一端上被挤压成楔形和与第二集成电路的连接区连接。
在这种球-楔法中的问题是对第二集成电路的压力负荷，也就是对焊线进行挤压并多数借助于超声波辅助将其压装在第二集成电路连接区上的电路。为了降低第二集成电路的压力负荷，已知设有由可导电材料制成的所谓球形中间件，其安放在第二集成电路的连接区上。跨接导线楔形展平的第二末端压装在该球形中间件上。该中间件用于进行压力卸荷。
跨接导线多数由金组成，尽管其与铜和银相比具有较差的电和机械特性。其原因在于启动特性，也就是在于与氧接触的情况下铜会氧化。由于铜的这种氧化，由铜组成的跨接导线失去其可联接性。因此在使用铜制成的跨接导线时，联接/焊接(bonden)通常在保护气体中进行，以防止铜氧化。迄今为止，由金制成的跨接导线在芯片与芯片的连接中已经得到最佳的验证。但对于金制成的跨接导线问题是金价很高。由于集成电路的不断改进的特性和壳体内部不断提高的组装密度，半导体布置结构内需要大量的跨接导线。可能需要数百直至上千条这种跨接导线。在使用金的跨接导线时，这在成本上占了很大的比重。
因此已知这样的尝试，即通过更有利的材料替代昂贵的金跨接导线。
为比金线节省成本，US 2003/0113574 A1提出了用金包裹的银或者钯线。
此外，由DE 10 2005 011028 A1已知，使用铜金合金。铜金合金的特征在于比金明显更高的硬度。但这种硬度对于跨接线来说是不希望的，因为由于对集成电路的连接区上的跨接线或跨接导线的挤压可能会损坏集成电路。在挤压连接区时，铜线上的金铜合金会导致集成电路的硅芯片中的裂缝，由此集成电路可能报废。
此外，DE 10 2005 011028 A1提出一种铜的跨接导线，在其表面上含有少量的金。在所述公开文献中特别优选地建议了一种由铜制成的、在表面中积聚/富含一定量的金的跨接导线，如果金可以作为层均匀地在线上构成，所述金的量相当于最大50，特别是最大50nm的外壳。
当将这种金涂层铜线作为跨接导线时，问题在于这种情况，即这种金涂层铜线的制造较为复杂，由此同样增加了成本。
发明内容
本发明的目的因此在于，提供一种具有跨接导线的半导体布置结构，该跨接导线与迄今为止的跨接导线相比明显更为经济。
该目的通过一种具有权利要求1特征的半导体布置结构得以实现。
该半导体布置结构的改进方案是各从属权利要求的内容。
用于制造这种半导体布置结构的方法为权利要求11的内容。该方法具有以下步骤：
提供具有至少一个第一连接区(3)的第一集成电路(IC1)，
提供具有至少一个第二连接区(6)的第二集成电路(IC2)，
提供用于使第一连接区(3)和第二连接区(6)电连接的跨接导线，
将第一可导电的中间件这样安装在第二集成电路(IC2)的连接区(6)上，即，使可导电的中间件(20)与第二集成电路(IC2)的连接区(6)导电连接，
将跨接导线(10)的第一末端(12)机械地固定在第一集成电路(IC1)的连接区(3)上，
将跨接导线(10)楔形的第二末端(14)机械地固定在中间件(20)上，其中，
中间件(20)的材料选择成比跨接导线(10)的材料软。
该方法权利要求的改进方案在权利要求12和13中给出。
根据本发明的半导体布置结构的特征在于，可以使用由比金明显更为有利的统一的材料制成的跨接导线。本发明无需使用例如用金涂层的、制造复杂的跨接导线。这一点由此实现，即例如由铜或者铜合金组成的跨接导线的楔形末端不是直接安置在集成电路的例如由铝或者铝合金组成的连接区上，而是跨接导线的该楔形末端放置在一坐靠在集成电路的连接区上的中间件上并在这里接通。该中间件优选设计成球形或者近似球形并由比跨接导线软的材料组成。中间件优选由金、金合金或掺杂金组成。
通过将中间件定位在跨接导线的楔形末端与集成电路的连接区之间，在压紧跨接导线的楔形末端时，压力不是直接传递到集成电路的半导体本体内，而是首先由中间件截获。集成电路的机械负荷因此与楔形末端直接压在集成电路连接区上的传统方法相比明显降低。
在本发明的范围内，跨接导线触点接通设置在一个共用壳体内的两个集成电路的连接区。两个集成电路可以并排或者重叠设置。跨接导线的直径最好为20-30μm和维氏硬度≤70。
附图说明
下面接合参照附图的实施例对根据本发明的半导体布置结构及其制造方法进行详细说明。其中：
图1示出具有并排设置在一个壳体内利用跨接导线相连接的两个集成电路IC1、IC2的第一实施例；
图2示出同样通过跨接导线相互导电接通的两个重叠设置在一个壳体内的集成电路；以及
图3示出图1和图2跨接导线楔形末端的区域内图1或图2跨接导线的电子扫描显微镜容纳处。
在后面的附图中，只要没有其他说明，相同的附图标记就表示具有相同意义的相同部件。
具体实施方式
图1示出集成半导体布置结构的壳体1。壳体内并排设置两个集成电路IC1、IC2。第一集成电路IC1具有一带有连接区3的第一半导体本体2，其中，从图1可以看出一个这种连接区3。半导体本体2例如由硅组成并在其表面上具有可以由铝或者铝合金组成的连接区。第二集成电路IC2具有第二半导体本体5，在其上表面上同样可以看到一连接区6。两个集成电路IC1、IC2的连接区3或6根据半导体布置结构的电的要求通过跨接导线10相互导电连接。图1示出这些跨接导线10的一个。跨接导线10由比金明显更为经济的材料组成。例如铜或者铜合金适于用作用于跨接导线10的材料。
跨接导线10按照已知的球-楔法(球-楔联接)与第一集成电路IC1连接。同样也可以采用其他连接方法。在球-楔联接中，借助适用的工具在烧结金属或者陶瓷组成的毛细管的内部引导跨接导线10。借助火焰或者放电使跨接导线10向下从毛细管中伸出的末端部熔接，从而通过表面张力形成一个球体。该球体在压力、热和超声波下联接在第一集成电路IC1的半导体本体2的连接区3上。在此方面，球体通过毛细管被略微压开，从而形成一种钉帽的形式。跨接导线10的这种球形的末端在图1中用附图标记12标注。
跨接导线10然后被引导至第二接触部位，在这里在图1的实施例中也就是引导到第二集成电路IC2的半导体本体5的连接区6。但与传统技术相反，跨接导线10不直接压在连接区6上。相反，在一在先的方法步骤中在该连接区6上安装一优选球形或者至少近似球形地形成的中间件20。该中间件20由比跨接导线10软的材料组成，例如当使用铜的跨接导线10时，由比铜软的材料组成。已经证明金、金合金或者掺杂金是合适的材料。
也就是说，将跨接导线10引导至具有已安装的中间件20的连接区6。借助超声波、热和压力将跨接导线10安置并牢固地联接在中间件20上。安装在联接工具的毛细管上方的线钳在工具抬起时防止带起跨接导线10，取代其在中间件20的区域内使跨接导线10断开。这样形成了跨接导线10的楔形末端14，跨接导线与中间件20导电连接。
这种球形的中间件20例如可以利用一第二工具安置到第二集成电路IC2的半导体本体5的连接区6上。这里，第二工具也可以是由烧结金属或者陶瓷组成的毛细管。如在跨接导线10的球形末端12的构型中那样，例如将金线穿过该第二工具的毛细管并借助火焰或者放电在下面从在第二工具的毛细管中伸出的金线末端上使其熔化，从而通过表面张力形成球体或球。在压力、热和超声波下将金线的该球体或该球安置在第二集成电路IC2的半导体本体5的连接面6上。随后由工具使金线断开，从而连接区6上仅保留带一销形凸起的球形中间件20。
图2示出与图1类似的半导体布置结构。但区别在于第二集成电路IC2以其半导体本体5直接安置在第一集成电路IC1的半导体本体2上。第二集成电路IC2的连接区6与第一集成电路IC1的连接区3通过铜的跨接导线10连接。跨接导线10的球形末端12安置在第一集成电路IC1的连接区3上，而跨接导线10的楔形末端14也通过中间件20安置在第二集成电路IC2的连接区6上。
虽然图1和2中仅示出唯一一个用于使第一集成电路IC1与第二集成电路IC2导电连接的跨接导线10，但可以理解，壳体1的内部必须设有大量这种用于使各集成电路导电连接的跨接导线。例如可以具有数百条这种跨接导线10。
图3在跨接导线的球形末端14的区域内示出三条这种跨接导线10，这些跨接导线通过中间件20导电连接在一集成电路的连接区6上。从图3可以清楚看出矩形的连接区6。在连接区6上安置最好由金组成的中间件20。该中间件20在扫描电子图像内看不出是球形，而是看上去是一个带有位于其上的销形凸起20b的盘形部分20a直接位于连接区上。中间件20的盘形部分20a和销形凸起20b相互一体地连接并仅在扫描电子图像中才能够看到这是似乎是两个部件。但实际上不是这种情况。带有销形凸起20b的盘形部分20a是这样形成的，即工具的毛细管略微压缩制备成球形的中间件20，并且在断开金线时有一个小的部分(金线)保留在该球形元件20上。从球形部分20a留下的该小部分在图3中为销形凸起20b。
附图标记列表
1壳体
2半导体本体
3连接区
5半导体本体
6连接区
10跨接导线
12球形的末端
14楔形的末端
20球形的中间件
IC1第一集成电路
IC2第二集成电路

Claims (13)

1.一种半导体布置结构，具有至少两个设置在一壳体(1)内的集成电路(IC1、IC2)，这些集成电路通过跨接导线(10)相互导电连接，其中，跨接导线(10)中的至少一个以一个末端(12)导电连接在第一集成电路(IC1)的一第一连接区(3)上，并以一楔形渐缩的第二末端(14)与一安装在第二集成电路(IC2)的连接区(6)上的并且导电的中间件(20)导电连接，其特征在于，跨接导线(10)由与中间件(20)不同的材料组成，并且中间件(20)的材料比跨接导线(10)的材料软。
2.按权利要求1所述的半导体布置结构，其特征在于，跨接导线(10)的材料为铜或铜合金。
3.按权利要求1或2所述的半导体布置结构，其特征在于，中间件(20)由金、金合金或掺杂金组成。
4.按权利要求1至3之一所述的半导体布置结构，其特征在于，中间件(20)制造成球形或接近球形。
5.按权利要求1至4之一所述的半导体布置结构，其特征在于，跨接导线(10)的第一末端具有球形或接近球形的形状。
6.按权利要求1至5之一所述的半导体布置结构，其特征在于，跨接导线(10)的直径为约20-30μm。
7.按权利要求1至6之一所述的半导体布置结构，其特征在于，跨接导线(10)材料的维氏硬度≤70。
8.按权利要求1至7之一所述的半导体布置结构，其特征在于，第一集成电路(IC1)和第二集成电路(IC2)相互并排设置。
9.按权利要求1至7之一所述的半导体布置结构，其特征在于，第一集成电路(IC1)和第二集成电路(IC2)相互重叠设置，并且第二集成电路(IC2)安放在第一集成电路(IC1)上。
10.用于制造按权利要求1至9之一所述半导体布置结构的方法，具有以下步骤：
-提供一具有至少一个第一连接区(3)的第一集成电路(IC1)，
-提供一具有至少一个第二连接区(6)的第二集成电路(IC2)，
-提供一用于使第一连接区(3)和第二连接区(6)导电连接的跨接导线，
-将一可导电的中间件这样安装在第二集成电路(IC2)的连接区(6)上，即，使可导电的中间件(20)与第二集成电路(IC2)的连接区(6)导电地连接，
-将跨接导线(10)的一第一末端(12)机械地固定在第一集成电路(IC1)的连接区(3)上，
-将跨接导线(10)的一楔形的第二末端(14)机械地固定在中间件(20)上，其中，
-中间件(20)的材料选择得比跨接导线(10)的材料软。
11.按权利要求1至10之一所述的半导体布置结构，其特征在于，连接区(6)由铝或铝合金形成。
12.按权利要求11所述的方法，其特征在于，将作为球形或者近似球形的元件的中间件(20)安装在第二集成电路(IC2)的连接区(6)上。
13.按权利要求11或12所述的方法，其特征在于，将跨接导线(10)作为球体的第一末端(12)熔接在第一集成电路(IC1)的连接区(3)上，并将跨接导线(10)的楔形的第二末端(14)设计成楔形联接点，由此借助于球-楔联接将跨接导线(10)固定在第一集成电路(IC1)和第二集成电路(IC2)上。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014083805A1 (ja) * 2012-11-28 2014-06-05 パナソニック株式会社 半導体装置およびワイヤボンディング配線方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100181675A1 (en) * 2009-01-16 2010-07-22 Infineon Technologies Ag Semiconductor package with wedge bonded chip
DE102010038130B4 (de) * 2010-10-12 2012-04-19 Technische Universität Berlin Dickdraht-Bondanordnung und Verfahren zum Herstellen
US20140374151A1 (en) * 2013-06-24 2014-12-25 Jia Lin Yap Wire bonding method for flexible substrates
CN111933605A (zh) * 2020-08-10 2020-11-13 紫光宏茂微电子(上海)有限公司 芯片焊接结构及焊接方法

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3718272A (en) * 1972-05-01 1973-02-27 Gen Motors Corp Bonding tip
US4096983A (en) * 1977-04-11 1978-06-27 E-Systems, Inc. Bonding copper leads to gold film coatings on alumina ceramic substrate
US4845543A (en) * 1983-09-28 1989-07-04 Hitachi, Ltd. Semiconductor device and method of manufacturing the same
JPS60223149A (ja) * 1984-04-19 1985-11-07 Hitachi Ltd 半導体装置
JPS61259555A (ja) * 1985-05-14 1986-11-17 Mitsubishi Metal Corp 半導体装置用Ｃｕ合金製ボンデイングワイヤ
JPS62150836A (ja) * 1985-12-25 1987-07-04 Hitachi Ltd 半導体装置
JPH0244745A (ja) * 1988-08-05 1990-02-14 Sharp Corp ワイヤボンディング方法
US6835898B2 (en) * 1993-11-16 2004-12-28 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
JPH10229100A (ja) * 1997-02-17 1998-08-25 Tokai Rika Co Ltd ワイヤボンディング方法及びプラスティックパッケージの製造方法
JPH10335366A (ja) * 1997-05-30 1998-12-18 Sanyo Electric Co Ltd 半導体装置
JP3662461B2 (ja) * 1999-02-17 2005-06-22 シャープ株式会社 半導体装置、およびその製造方法
JP3822768B2 (ja) * 1999-12-03 2006-09-20 株式会社ルネサステクノロジ Ｉｃカードの製造方法
EP1122778A3 (en) * 2000-01-31 2004-04-07 Sanyo Electric Co., Ltd. Circuit device and manufacturing method of circuit device
US7414319B2 (en) * 2000-10-13 2008-08-19 Bridge Semiconductor Corporation Semiconductor chip assembly with metal containment wall and solder terminal
US8062098B2 (en) * 2000-11-17 2011-11-22 Duescher Wayne O High speed flat lapping platen
JP2003059961A (ja) * 2001-08-16 2003-02-28 Mitsubishi Electric Corp ワイヤボンディング方法、および半導体装置
US6787926B2 (en) * 2001-09-05 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd Wire stitch bond on an integrated circuit bond pad and method of making the same
US6476506B1 (en) * 2001-09-28 2002-11-05 Motorola, Inc. Packaged semiconductor with multiple rows of bond pads and method therefor
US6711925B2 (en) 2001-12-17 2004-03-30 Asep Tec Co., Ltd. Process for manufacturing a conductive wire suitable for use in semiconductor packages
EP1367644A1 (en) * 2002-05-29 2003-12-03 STMicroelectronics S.r.l. Semiconductor electronic device and method of manufacturing thereof
JP2005268497A (ja) * 2004-03-18 2005-09-29 Denso Corp 半導体装置及び半導体装置の製造方法
US7053469B2 (en) * 2004-03-30 2006-05-30 Advanced Semiconductor Engineering, Inc. Leadless semiconductor package and manufacturing method thereof
WO2006018671A1 (en) * 2004-08-19 2006-02-23 Infineon Technologies Ag Mixed wire semiconductor lead frame package
US7868468B2 (en) * 2004-11-12 2011-01-11 Stats Chippac Ltd. Wire bonding structure and method that eliminates special wire bondable finish and reduces bonding pitch on substrates
DE102005011028A1 (de) * 2005-03-08 2006-09-14 W.C. Heraeus Gmbh Kupferbonddraht mit verbesserten Bond- und Korrosionseigenschaften
JP2006278407A (ja) * 2005-03-28 2006-10-12 Renesas Technology Corp 半導体装置の製造方法
JP2005294874A (ja) * 2005-07-06 2005-10-20 Nippon Steel Corp ワイヤをウェッジ接合した半導体装置及び金合金ボンディングワイヤ
JP2007134504A (ja) * 2005-11-10 2007-05-31 Tatsuta Electric Wire & Cable Co Ltd 半導体装置
US20070222087A1 (en) * 2006-03-27 2007-09-27 Sangdo Lee Semiconductor device with solderable loop contacts
JP2008034567A (ja) * 2006-07-27 2008-02-14 Fujitsu Ltd 半導体装置及びその製造方法
US7911053B2 (en) * 2007-04-19 2011-03-22 Marvell World Trade Ltd. Semiconductor packaging with internal wiring bus
US7723852B1 (en) * 2008-01-21 2010-05-25 Amkor Technology, Inc. Stacked semiconductor package and method of making same
US7768135B1 (en) * 2008-04-17 2010-08-03 Amkor Technology, Inc. Semiconductor package with fast power-up cycle and method of making same
CN101615587A (zh) * 2008-06-27 2009-12-30 桑迪士克股份有限公司 半导体装置中的导线层叠式缝线接合
KR101099233B1 (ko) * 2008-07-11 2011-12-27 가부시키가이샤 닛데쓰 마이크로 메탈 본딩 와이어의 접합 구조
JP5331610B2 (ja) * 2008-12-03 2013-10-30 ルネサスエレクトロニクス株式会社 半導体集積回路装置
KR101024748B1 (ko) * 2008-12-15 2011-03-24 하나 마이크론(주) 서포터 칩을 갖는 반도체 패키지 및 그 제조 방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014083805A1 (ja) * 2012-11-28 2014-06-05 パナソニック株式会社 半導体装置およびワイヤボンディング配線方法

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