JPH0244745A - ワイヤボンディング方法 - Google Patents

ワイヤボンディング方法

Info

Publication number
JPH0244745A
JPH0244745A JP63196375A JP19637588A JPH0244745A JP H0244745 A JPH0244745 A JP H0244745A JP 63196375 A JP63196375 A JP 63196375A JP 19637588 A JP19637588 A JP 19637588A JP H0244745 A JPH0244745 A JP H0244745A
Authority
JP
Japan
Prior art keywords
ball
pad
output
wire
wire bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63196375A
Other languages
English (en)
Inventor
Kenji Toyosawa
健司 豊沢
Takamichi Maeda
前田 崇道
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP63196375A priority Critical patent/JPH0244745A/ja
Priority to US07/386,519 priority patent/US4993618A/en
Publication of JPH0244745A publication Critical patent/JPH0244745A/ja
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004Wire welding
    • B23K20/005Capillary welding
    • B23K20/007Ball bonding
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    • H01L24/03Manufacturing methods
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
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  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〈産業上の利用分野〉 本発明は、半導体チップのパッドとインナーリードとを
ボンディングワイヤで接続するワイヤボンディング方法
に関する。
〈従来の技術〉 第3図はワイヤボンディング方法を示す説明図、第4図
は従来のワイヤボンディング方法を示すタイムチャート
、第5図は従来のワイヤボンディング方法の問題点を示
す説明図である。
ワイヤボンディングとは、半導体チップ10の電極であ
るパッド11と、リードフレーム等のインナーリード(
図示省略)とを金線等のボンディングワイヤ30で接続
することをいい、このワイヤボンディングを行うワイヤ
ボンディング装置は、ファーストボンディング箇所であ
るパッド11と、セカンドボンディング箇所であるイン
ナーリードとの間にわたってボンディングワイヤ30を
移動させるとともに、パッド11及びインナーリードと
にボンディングワイヤ30を圧接するキャピラリー40
と、このキャピラリー40の先端から突出したボンディ
ングワイヤ30の先端にボール31を形成するトーチ(
図示省略)とを有している。
まず、トーチでボンディングワイヤ30の先端にボール
31を形成しく第3図(a)参照)、このボール31を
キャピラリー40で押し潰すようにしてパッド11に圧
接する。ボール31が押し潰された後、キャピラリー4
0をボール31に押し付けたままの状態で、第4図に示
すT2からT4までの間、一定出力の  態で一定出力
の強い超音波を加えると、バッド11超音波をボール3
1に加えてボール31とパッド11と  の真下にある
絶縁酸化膜12、Locos膜14等にクラの接合をよ
り強固なものにする (第3図(b)参照)   ツク
121等のダメージが発生する (第5図参照)ボール
31とパッドエ1との接合が完了したならば、キャピラ
リー40をセカンドボンディング側に移動させてセカン
ドボンディングを行う (第3図(C)参照、第4図に
示すT5においてキャピラリー40がボール31から離
れる)。
なお、キャピラリー40の上下動にはパルスモータ等が
使用される。
〈発明が解決しようとする課題〉 しかしながら、上述した従来のワイヤボンディング方法
によると以下のような問題点がある。
すなわち、パッド11が薄く、かつパッド11を構成す
るメタルの硬度が低い場合、ボール31をパッド11に
圧接すると、ボール31がパッド11の中に入り込み、
当該ポール31がパッド11の真下にある絶縁酸化膜1
2に接近することがある。
絶縁酸化膜12は機械的強度が低いので、この状特に、
銅、銀等の金より硬度の高い材料をボンディングワイヤ
として用いると、ボールがパッドの中により入り込んで
、ボールと絶縁酸化膜との間の間隔が小さくなるので、
絶縁酸化膜に対して直接超音波が加えられることになり
、より顕著なダメージが発生する。
本発明は上記事情に鑑みて創案されたもので、パッドの
真下にある絶縁酸化膜等にクラック等のダメージが発生
しないワイヤボンディング方法を提供することを目的と
している。
〈課題を解決するための手段〉 本発明に係るワイヤボンディング方法は、半導体チ亀ン
プのパッドとインナーリードとをボンディングワイヤで
接続するワイヤボンディング方法であって、ボンディン
グワイヤの先端に形成されたボールが前記バンドに圧接
されている間に、前記ボールに加えられる超音波の出力
を減少させるようにしている。
〈作用〉 ボンディングワイヤの先端に形成されたボールをパッド
に圧接する。このボールに超音波を加える。ボールがパ
ッドに圧接されている間に、超音波の出力を減少させる
〈実施例〉 以下、図面を参照して本発明に係る一実施例を説明する
第1図は本発明に係るワイヤボンディング方法を示すタ
イムチャート、第2図はこのワイヤボンディング方法に
よるワイヤボンディングの説明図である。なお、従来の
ものと路間−の部品等には同一の符号を付して説明を行
う。
本発明に係るワイヤボンディング方法は、半導体チップ
10のパッド11とインナーリードとをボンディングワ
イヤ30で接続するワイヤボンディング方法であって、
ボンディングワイヤ30の先端に形成されたボール31
が前記パッド11に圧接されている間に、前記ボール3
1に加えられる超音波の出力を減少させるようにしてい
る。
まず、本発明に係るワイヤボンディング方法でワイヤボ
ンディングされる半導体チップ10の構造の一例につい
て説明する。
この半導体チップ10は、シリコン基板15の上にLo
cos膜14、絶縁酸化膜12、パッシベーション膜1
3が順次積層されたものであって、パッシベーション膜
13が開口している部分にはファーストボンディング箇
所としてのパッド11が設けられている。
本発明に係るワイヤボンディング方法によるワイヤボン
ディングは次のようにして行われる。
まず、トーチによってボンディングワイヤ30の先端に
ボール31が形成される。このボール31は、キャピラ
リー40によってパッド11に圧接される。
すなわち、第1図に示すT1においてボール31がパッ
ド11に対して圧接され、T2において超音波がボール
31に対して加えられる。
ボール31がパッド11に圧接されている間に、超音波
の出力を減少させる。超音波の出力の減少には、第1図
(a)に示すように徐々に出力を減少させる方法と、第
1図℃)に示すように段階的に出力を減少させる方法と
の2つの方法がある。
徐々に出力を減少させる場合には、T2において超音波
を加え始め、最高出力Bに達すると同時に徐々に出力を
減少させ、T4において出力Aになると同時に超音波の
発振を停止する。この場合において、最高出力Bは、ボ
ール31がパッド11に入り込んでいない状態でボール
31に対して加えられても、パッド11にクラックが入
ったり、飛び散ったりしない程度の出力とする。また、
出力Aはボール31がパッド11に入り込んだ状態で、
ボール31に対して加えてもパッド11にダメージが発
生しない程度の出力とする。
また、第1図(b)に示すように超音波の出力を段階的
に減少させる場合は、T2において超音波の発振を始め
、最高出力Bに達したならば、T、までその状態を維持
し、T3からT4まではAの出力で超音波を発振する。
この場合における最高出力B及び出力Aは上記と同様に
設定しておく。
〈発明の効果〉 本発明に係るワイヤボンディング方法は、ボンディング
ワイヤの先端に形成されたボールがパッドに圧接されて
いる間に、前記ボールに加えられる超音波の出力を減少
させるようになっているので、以下に述べるような理由
から機械的強度が低い絶縁酸化膜にクランク等のダメー
ジが発生しない。
■ボールをパッドに圧接した直後は、ボールがパッドの
中にまだ入り込んでいないので、高い出力の超音波を加
えても、パッドの下に形成された絶縁酸化膜等にまで超
音波は伝わらない。
■ボールがパッドの中に入り込んでも、その状態におけ
る超音波の出力は既に低くなっているので、ボールに出
力される超音波で絶縁酸化膜にクランクが発生すること
がない。
本発明に係るワイヤボンディング方法で、金より硬度の
高い銅ワイヤをボンディングワイヤとしてワイヤボンデ
ィングを行った実験の結果を示す。
なお、この実験の結果はワイヤボンディング後のボンデ
ィングワイヤを硝酸で除去した後、加熱されたNaOH
水溶液でパッド及び絶縁酸化膜下のシリコン等をエツチ
ングすることにより、絶縁酸化膜に入ったクラックを顕
在化させて求めた。
従来の、ワイヤボンディング方法、すなわちボールがパ
ッドに圧接した後、一定出力の超音波を加えると、約9
0%の半導体チップにクランクが発生した。それに対し
て、本発明に係るワイヤボンディング方法では、クラン
クの発生率は減少することが確認された。
実験結果からも明らかなように、本発明に係るワイヤボ
ンディング方法による場合には、ワイヤボンディングに
よるクラック等のダメージがほとんど発生しないので、
より信頼性の高い半導体チップを提供することができる
さらに、ワイヤボンディング材料として金より硬度が高
い銅、銀を用いた場合には信頼性が高く、かつ安価な半
導体チップを提供することができる。
【図面の簡単な説明】
第1図は本発明に係るワイヤボンディング方法を示すタ
イムチャート、第2図はこのワイヤボンディング方法に
よるワイヤボンディングの説明図、第3図はワイヤボン
ディング方法を示す説明図、第4図は従来のワイヤボン
ディング方法を示すタイムチャート、第5図は従来のワ
イヤボンディング方法の問題点を示す説明図である。 10・・・半導体チップ、11・・・パッド、30・・
・ボンディングワイヤ、31・・・ボール。

Claims (1)

    【特許請求の範囲】
  1. (1)半導体チップのパッドとインナーリードとをボン
    ディングワイヤで接続するワイヤボンディング方法にお
    いて、ボンディングワイヤの先端に形成されたボールが
    前記パッドに圧接されている間に、前記ボールに加えら
    れる超音波の出力を減少させることを特徴とするワイヤ
    ボンディング方法。
JP63196375A 1988-08-05 1988-08-05 ワイヤボンディング方法 Pending JPH0244745A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP63196375A JPH0244745A (ja) 1988-08-05 1988-08-05 ワイヤボンディング方法
US07/386,519 US4993618A (en) 1988-08-05 1989-07-27 Wire bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63196375A JPH0244745A (ja) 1988-08-05 1988-08-05 ワイヤボンディング方法

Publications (1)

Publication Number Publication Date
JPH0244745A true JPH0244745A (ja) 1990-02-14

Family

ID=16356819

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63196375A Pending JPH0244745A (ja) 1988-08-05 1988-08-05 ワイヤボンディング方法

Country Status (2)

Country Link
US (1) US4993618A (ja)
JP (1) JPH0244745A (ja)

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JP2017168735A (ja) * 2016-03-17 2017-09-21 豊田合成株式会社 ワイヤボンディング方法

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JPH088285B2 (ja) * 1990-02-23 1996-01-29 株式会社東芝 ワイヤボンディング方法
US5285946A (en) * 1991-10-11 1994-02-15 Sanyo Electric Co., Ltd. Apparatus for mounting components
US5595330A (en) * 1994-08-24 1997-01-21 Verity Instruments, Inc. Power supply
US5661082A (en) * 1995-01-20 1997-08-26 Motorola, Inc. Process for forming a semiconductor device having a bond pad
US6152350A (en) * 1997-06-19 2000-11-28 Fuji Photo Film Co., Ltd. Ultrasonic welding device and method, and a magnetic tape cartridge reel welding device and method
EP2133915A1 (de) * 2008-06-09 2009-12-16 Micronas GmbH Halbleiteranordnung mit besonders gestalteten Bondleitungen und Verfahren zum Herstellen einer solchen Anordnung
JP6680239B2 (ja) * 2017-02-20 2020-04-15 日亜化学工業株式会社 発光装置の製造方法
US11517977B2 (en) * 2017-09-15 2022-12-06 Tech-Sonic, Inc. Dual cam servo weld splicer

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SU961900A1 (ru) * 1980-08-22 1982-09-30 Всесоюзный Научно-Исследовательский Проектно-Технологический Институт Токов Высокой Частоты Им.В.П.Вологдина Способ управлени процессом ультразвуковой сварки и устройство дл его осуществлени
JPS5950536A (ja) * 1982-09-16 1984-03-23 Toshiba Corp ワイヤボンデイング装置
JPS60101039A (ja) * 1983-11-09 1985-06-05 東洋化学株式会社 包装用袋体
US4603802A (en) * 1984-02-27 1986-08-05 Fairchild Camera & Instrument Corporation Variation and control of bond force
US4696425A (en) * 1984-07-17 1987-09-29 Texas Instruments Incorporated Programmable ultrasonic power supply
JPH0815166B2 (ja) * 1985-03-14 1996-02-14 株式会社東芝 ワイヤボンデイング方法
JPS6341217A (ja) * 1986-08-05 1988-02-22 Mazda Motor Corp 車両のサスペンシヨン装置
JPS63124435A (ja) * 1986-11-12 1988-05-27 Mitsubishi Electric Corp ワイヤボンデイング装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017168735A (ja) * 2016-03-17 2017-09-21 豊田合成株式会社 ワイヤボンディング方法

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