KR930006956A - 125 킬로 헤르쯔 이상에서의 초음파 본딩 방법 - Google Patents

125 킬로 헤르쯔 이상에서의 초음파 본딩 방법 Download PDF

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Publication number
KR930006956A
KR930006956A KR1019920017767A KR920017767A KR930006956A KR 930006956 A KR930006956 A KR 930006956A KR 1019920017767 A KR1019920017767 A KR 1019920017767A KR 920017767 A KR920017767 A KR 920017767A KR 930006956 A KR930006956 A KR 930006956A
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South Korea
Prior art keywords
bond
ultrasonic energy
khz
bonding
transducer
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KR1019920017767A
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English (en)
Inventor
에이취. 램시 토마스
시. 알파로 라파엘
Original Assignee
윌리엄 이. 힐러
텍사스 인스트루먼츠 인코포레이티드
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Publication of KR930006956A publication Critical patent/KR930006956A/ko

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    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
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    • B23K20/007—Ball bonding
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/203—Ultrasonic frequency ranges, i.e. KHz
    • H01L2924/20309—Ultrasonic frequency [f] f>=200 KHz

Abstract

도선(12)를 집적 회로(14)의 결합 위치(28)에 본딩하기 위한 장치(10) 및 방법이 제공된다. 양호한 실시예에 있어서는 도선(12)가 알루미늄 결합 패드(28)에 결합된다. 장치(10)은 약 125KHz이상의 주파수에서 초음파 에너지를 제공하도록 설계된 고주파 초음파 에너지원을 포함한다. 초음파 에너지는 트랜스듀서(18) 및 캐필러리(16)을 경유하여 본딩 경계면(32)에 인가된다. 고주파 초음파 에너지의 파장이 경계면(32)에 인가될 때 그 파복점(antinodal point)에 있게 되어 최적화 되도록, 트랜스듀서는 길이가 변경되고 공구 접속점(40)은 트랜스듀서(18)상에 놓인다. 본 공정의 양호한 실시예에 있어서의 초음파 에너지는 주변 온도에서 약 350KHz로 인가된다.
이러한 형태로 결합 단부(30) 및 결합패드(28) 사이에 형성된 결합은 인장 강도, 결합시간 및 공정 온도의 측면에서 최적화된다.
종래의 기술에서 금속간 결합 및 결합 강도의 측면에서 특히 곤란한 점이었던, 알루미늄과 2% 구리 등과 같은 알루미늄 합금 결합 패드에 관련하여 특히 유익한 결과가 발견된다. 따라서, 본 발명에 따르면 상술한 범위에서 고주파 초음파를 사용할 경우, 큰 공정 파라미터의 유연성을 가진 탁월한 강도의 결합이 형성된다.

Description

125 킬로 헤르쯔 이상에서의 초음파 본딩 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 마이크로 전자 집적 회로에 도선을 볼-본딩 하기 위해 사용되는 본딩 장치를 도시한 블록도 또는 개략도, 제2도는 본딩 장치에 사용되는 트랜스듀서의 부분 정면도, 제3도 내지 제3C도는 본딩이 이루어지는 경계면에서의 다양한 금속한 결합의 단계를 도시한 단면도, 제4도는 300℃에서 금 도선을 순수 알루미늄에 본딩할 때의 초음파 주파수와 결합 시간 사이의 관계를 도시한 그래프.

Claims (8)

  1. (a) 도전성 결합 위치를 제공하는 단계, (b) 결합 단부를 갖고 있는 도선을 제공하는 단계, (c) 상기 도선의 결합 단부 및 결합 위치 사이에 경계면이 생기도록 상기 결합 단부를 상기 결합 위치에 접촉시키는 단계 및 (d) 약 125KHz 이상의 주파수에서 상기 경계면에 초음파 에너지를 인가하는 단계를 포함하는 것을 특징으로 하는 마이크로 전자적 결합 형성 방법.
  2. 제1항에 있어서, 단계 (d)가 주변 온도에서 수행되는 것을 특징으로 하는 방법.
  3. 제1항에 있어서, 단계 (d)가 약 37℃에서 수행되는 것을 특징으로 하는 방법.
  4. 제1항에 있어서, 단계 (d)가 약 200℃이하에서 수행되는 것을 특징으로 하는 방법.
  5. 제1항에 있어서, 단계 (d)가 약125KHz에서 약 2MHz주파수 범위에서 수행되는 것을 특징으로 하는 방법.
  6. 제1항에 있어서, 단계 (d)가 약 350KHz의 주파수 및 27℃에서 수행되는 것을 특징으로 하는 방법.
  7. 제1항에 있어서, 단계 (d)가 0.58 밀리초 동안 수행되는 것을 특징으로 하는 방법.
  8. 제1항의 공정에 의해 형성된 마이크로 전자적 결합을 갖고 있는 집적 회로 디바이스.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920017767A 1991-09-30 1992-09-29 125 킬로 헤르쯔 이상에서의 초음파 본딩 방법 KR930006956A (ko)

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US07/767,740 US5244140A (en) 1991-09-30 1991-09-30 Ultrasonic bonding process beyond 125 khz
US767,740 1996-12-17

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US5244140A (en) 1993-09-14
EP0535433A2 (en) 1993-04-07
JPH06204298A (ja) 1994-07-22
TW222362B (ko) 1994-04-11
MY129925A (en) 2007-05-31

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