JPH02101754A - ボンディング方法及びボンディング装置 - Google Patents

ボンディング方法及びボンディング装置

Info

Publication number
JPH02101754A
JPH02101754A JP63253763A JP25376388A JPH02101754A JP H02101754 A JPH02101754 A JP H02101754A JP 63253763 A JP63253763 A JP 63253763A JP 25376388 A JP25376388 A JP 25376388A JP H02101754 A JPH02101754 A JP H02101754A
Authority
JP
Japan
Prior art keywords
bonding
wire
bonded
tip
pole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63253763A
Other languages
English (en)
Inventor
Mitsukiyo Tani
光清 谷
Hideo Shiraishi
秀男 白石
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Computer Electronics Co Ltd
Hitachi Ltd
Original Assignee
Hitachi Computer Electronics Co Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Computer Electronics Co Ltd, Hitachi Ltd filed Critical Hitachi Computer Electronics Co Ltd
Priority to JP63253763A priority Critical patent/JPH02101754A/ja
Priority to KR1019890013732A priority patent/KR920008255B1/ko
Priority to US07/413,822 priority patent/US5002217A/en
Priority to DE19893933982 priority patent/DE3933982C2/de
Publication of JPH02101754A publication Critical patent/JPH02101754A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/10—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、微小部品内の配線接触等を行なうボンディン
グ方法及びそれを行なうボンディング装置に係り、特に
ポールボンディングに好適なボンディング方法及びボン
ディング装置に関する。
〔従来の技術〕
従来半導体の配線等に用いられているボンディング方法
は１例えば特開昭６１−７１６４２号に記載のネイルヘ
ッドボンディングといわれる方法のように、金属細線の
一端にポールを形成し、これをキャピラリーを用いて上
１部より押し付けて基板に接続し、さらに細線の他端も
同様にポールを形成して接続するものである。また特開
昭５７−１７３９５１号にはウェッジボンディングとい
われる方法が記載されている。
〔発明が解決しようとする課題〕
上記従来技術は、ボンディング後のポールの形状につい
て配慮されておらず、特にポールの上部の形状に問題が
あった。すなわち、上記従来技術はボンディング後のポ
ールの垂直方向にワイヤーが配線されていたり、ボンデ
ィングした後のその上部の形状が傾斜する構造となって
いた。そのためボンディング後にボンディング部の接続
チエツク及び部品の機能チエツクを行なう時に上からプ
ローブピンを接触させる場合に非常に不都合な形状とな
っていた。また、ボンディング部にさらにポールボンデ
ィングを重ねて行なう場合も、上記の形状は信頼性の高
い接続を行なうには不都合な形状となっていた。
本発明の目的は、ボンディング部を好ましい形状とする
ためのボンディング方法及びボンディング装置を提供す
ることにある。
〔課題を解決するための手段〕
上記目的は、（１）先端がポール状のボンディングワイ
ヤーを所望の位置に圧接し、超音波を用いてボンディン
グするボンディング方法において、上記圧接は、平坦な
加熱チップを用いて上記ボンディングワイヤーを加圧し
ながら高周波通電加熱して行なうことを特徴とするボン
ディング方法、（２）先端がポール状のボンディングワ
イヤーを被ボンディング物に圧接するためのボンディン
グチップと、該ボンディングチップに超音波を与えるだ
めの超音波発振器と、該ボンディングチップを高周波加
熱するための加熱手段とを有することを特徴とするボン
ディング装置によって達成される。
本発明のボンディング方法は、例えばワイヤーポールに
ほぼ垂直に加圧を加えるボンディングチップに超音波振
動を印加しつつ高周波通電加熱して行なう。高音波振動
の振動数は３０〜９０ｋ　Ｈｚの範囲であることが好ま
しく、また振幅は数μｍであることが好ましい。また高
周波通電の振動数は２゜ＯＨｚ〜２ｋＨｚの範囲である
ことが好ましい。
第６図は、本発明の方法により接着されたボンディング
部の一例の接着強度を他の方法のそれと比較して示すも
ので、超音波と高周波加熱を併用すると他の方法例えば
超音波と交流加熱の場合より接着強度が増加することを
示している。
〔作　　用〕
超音波を発振しつつ、高周波を印加し、大電流通電を行
ない、チップ自体に通電振動を起こすと、超音波の振動
とは異なるうなり振動とうねりが発生し、高周波加熱チ
ップとワイヤーのポールとの界面の摩擦力が向上し、ボ
ンディング部の上面が平坦となり、さらにその分だけポ
ンディングパッドとポールの摩擦作用が大きく働き、接
続強度が高くなる。すなわち超音波振動と高周波加熱と
を併用することによって、超音波の振動数（回／秒）と
加熱高周波の振動数（回／秒）との差の振動数をもった
うなり振動が発生し、このうなり振動が上記摩擦力を生
せしめる。また振幅は超音波のみの共振点の振幅にチッ
プ自身の通電振動が加算された振幅のうねりによって、
仕事量が増加するためボンディング時の摩擦作用が大き
く働く。
〔実施例〕
以下１本発明の一実施例を図面を用いて説明する。
第４図は、本発明のボンディング装置の一例の概略斜視
図である。先端が平坦なボンディングチップ１はチップ
ホルダー２に保持されている。超音波ホーン３は絶縁ブ
ロック１３を介して上記チップホルダー２の胴部に押し
付けられる。これらを含むヘッド部分は、モータ駆動機
構１２とポールネジ（図示せず）により垂直方向に下降
し得る構成となっている。上記ボンディングチップ１は
タングステン板をＵ字形に加工し、先端に平坦加工を施
したものであり、高周波定電力電源９から高周波トラン
ス８を介してチップ両端に高周波電圧が印加され、通電
される。また高音波発振の強度。
時間は超音波発振器７によりコントロールされる。
なお、１０は、モータ駆動機構１２をコントロールする
コントローラ、６は基板、５はポンディングパッド、４
は線材（ポール付）である。また、これらの高周波定電
力電源９、コントローラ１０、超音波発振器７等は制御
手段（マイクロコンピュータ）１１により制御される。
つぎにこの装置によりボンディングを行なった例を示す
、第１図に示すように先端にポール４１を形成した線材
４２をポンディングパッド５の上に、線材４２が基板に
ほぼ平行になるように配置する。
この上部からボンディングチップで加圧し、超音波を印
加し、さらに高周波通電加熱し、第２図に示すようにボ
ンディング部４１′の上面の形状が平坦になるようにボ
ンディングする。このような形状にボンディングすれば
、第３図に示すようにボンディング部４１′の上にさら
に重ねてボンディングすることもでき、接続後の導通チ
エツクを行なう場合、上層のボンディング部４１′の上
面の平坦部をプローブすることもできる。
以上のボンディングは、第５図のタイムシーケンスに従
って制御手段１工にて制御し、超音波印加は加圧が充分
完了した時点で発振し、高周波通電も発振後数秒後に瞬
間的に通電加熱する方式を採用し、線材及び下地のメタ
ライズ構成に熱影響を与えないようにした。なお、第５
図のタイムシーケンス以外の方法でも行なうことができ
る。
また、上記実施例では超音波の振動数を６０ｋ　Ｈｚ、
高周波加熱の周波数を４００　Ｈｚとして行なったが。
超音波の振動数を３０〜９０ｋ　Ｈｚ、高周波加熱の周
波数を２００Ｈｚ〜２ｋＨｚの範囲で同様に実施したが
、いずれも同様の効果があった。
〔発明の効果〕
本発明によれば従来のボンディング方法では得られなか
った平坦でかつ強度の高いボンディングを行なうことが
できる。特に強度に関しては第６図に示す様に超音波と
高周波加熱ボンディングとを採用すると他の方法に較べ
て非常に強度の高いボンディング接続が得られることが
特徴であり、信頼性の高い接続が得られる。また従来行
なっていたボンディングとは異なった平坦ボンディング
が出来るため、接続・配線後のチエツクのためのブロー
ビングが可能となる。さらにはポールボンディングの重
ね接続が可能となるため、微小スペースが高密度に配線
実装することが可能となる６
【図面の簡単な説明】
第１図、第２図及び第３図は、本発明を説明するための
線材と被ボンディング物との関係を示す説明図、第４図
は本発明のボンディング装置の一例の概略斜視図、第５
図はボンディング時のタイムシーケンスの一例を示す図
、第６図は１本発明を説明するためのボンディング部の
強度を示す図である。 １・・・ボンディングチップ ２・・・チップホルダー ４・・・線材（ポール付） ６・・・基板 ８・・・高周波トランス １０・・・コントローラ １２・・・モータ駆動機構 ４１・・・ポール ４１’　、　４１’ ４２・・・線材 ・・・ボンディング部

Claims (1)

  1. 【特許請求の範囲】 １、先端がポール状のボンディングワイヤーを所望の位
    置に圧接し、超音波を用いてボンディングするボンディ
    ング方法において、上記圧接は、平坦な加熱チップを用
    いて上記ボンディングワイヤーを加圧しながら高周波通
    電加熱して行なうことを特徴とするボンディング方法。 ２、先端がポール状のボンディングワイヤーを被ボンデ
    ィング物に圧接するためのボンディングチップと、該ボ
    ンディングチップに超音波を与えるための超音波発振器
    と、該ボンディングチップを高周波加熱するための加熱
    手段とを有することを特徴とするボンディング装置。
JP63253763A 1988-10-11 1988-10-11 ボンディング方法及びボンディング装置 Pending JPH02101754A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP63253763A JPH02101754A (ja) 1988-10-11 1988-10-11 ボンディング方法及びボンディング装置
KR1019890013732A KR920008255B1 (ko) 1988-10-11 1989-09-25 본딩방법 및 본딩장치
US07/413,822 US5002217A (en) 1988-10-11 1989-09-28 Bonding method and bonding apparatus
DE19893933982 DE3933982C2 (de) 1988-10-11 1989-10-11 Kontaktierungsverfahren und Kontaktierungsvorrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63253763A JPH02101754A (ja) 1988-10-11 1988-10-11 ボンディング方法及びボンディング装置

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Publication Number Publication Date
JPH02101754A true JPH02101754A (ja) 1990-04-13

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JP (1) JPH02101754A (ja)
KR (1) KR920008255B1 (ja)
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Also Published As

Publication number Publication date
KR900007091A (ko) 1990-05-09
DE3933982C2 (de) 1994-05-11
DE3933982A1 (de) 1990-04-12
KR920008255B1 (ko) 1992-09-25
US5002217A (en) 1991-03-26

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