JP6002437B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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JP6002437B2
JP6002437B2 JP2012113619A JP2012113619A JP6002437B2 JP 6002437 B2 JP6002437 B2 JP 6002437B2 JP 2012113619 A JP2012113619 A JP 2012113619A JP 2012113619 A JP2012113619 A JP 2012113619A JP 6002437 B2 JP6002437 B2 JP 6002437B2
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aluminum
electrode
copper
wire
semiconductor device
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JP2013243166A (ja
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芳雄 藤井
芳雄 藤井
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New Japan Radio Co Ltd
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New Japan Radio Co Ltd
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Priority to JP2012113619A priority Critical patent/JP6002437B2/ja
Priority to TW101142152A priority patent/TWI534917B/zh
Priority to DE102012221025.3A priority patent/DE102012221025B4/de
Priority to KR1020120137086A priority patent/KR101951957B1/ko
Priority to US13/692,101 priority patent/US9245954B2/en
Priority to CN2012105586890A priority patent/CN103426918A/zh
Publication of JP2013243166A publication Critical patent/JP2013243166A/ja
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Description

本発明は半導体装置及びその製造方法、特にパワー半導体素子等で銅線を用いてワイヤボンディングする半導体装置に関する。
従来から、半導体装置における半導体素子（チップ）とリード線や回路基板との間の配線は、アルミニウム（Ａｌ）線を用いたワイヤボンディングで行われており、半導体素子の電極表面に形成されたアルミニウムや金の材料に対してアルミニウム線が接続される。
例えば、家電機器、ＯＡ機器、音響機器等の電源には、ダイオードやトランジスタ等のパワー（電力制御用）半導体装置が用いられているが、このパワー半導体装置でも、ワイヤボンディングの金属線として、パワー半導体素子の大電流化及びコストダウンの要請からアルミニウム線が用いられていた。
一方、近年、非特許文献１に示されるように、熱伝導率、電気伝導率等において有利となる銅線を用いてワイヤボンディングすることが提案され、半導体素子の電極表面に形成されたアルミニウム材や銅材に対して銅線を接続することが行われる。一般的に、この銅線には、細径線と太径線があり、細径線の場合は７５μｍ未満の銅線を用いて、ボールボンディング技術によって配線され、このときの半導体素子の電極表面にはアルミニウム材が使用される。また、太径線の場合は７５μｍ以上の銅線を用いて、ウエッジボンディング技術によって配線され、このときの半導体素子の電極表面には銅材が適用される。
特開平６−２６０５３８号公報
CIPS 2010, March, 16-18, 2010, Nuremberg/Germany-Paper 3.7
しかしながら、７５μｍ未満の細径の銅線を使用したボールボンディング技術では、ボールボンディング時の衝撃により半導体素子基板にダメージが与えられることがあり、従来では、この半導体素子へのダメージを緩和させるために、半導体基板上の電極にアルミニウム層を厚く形成することが行われており、その分、材料費が必要になるという不都合があった。
一方、高出力の上記パワー半導体装置の場合、その出力が銅の線径によるため、太い径の銅線が必要とされ、７５μｍ以上の太径の銅線は、上述のようにウエッジボンディング技術で電極に対する接合・接続が行われるが、従来のウエッジボンディング技術では、同種の材料同士の接続しか報告されておらず、銅線をボンディングするためには半導体素子電極表面に銅材を使用する必要があった。
しかしながら、従来の半導体素子の電極表面には、一般的にアルミニウム材が多く使用されており、半導体素子の電極表面に銅材を使用するには、従来の設備からの大掛かりな変更が必要になるという問題がある。
また、銅線の半導体素子電極への接続においては、線径に関係なく、耐熱性の高い強固な接合が行われること（高耐熱化）が要請される。
本発明は上記問題点に鑑みてなされたものであり、その目的は、半導体素子の電極表面にアルミニウム材を用いることができ、またこのアルミニウム層を無駄に厚く形成する必要もなく、線径に関係なく銅線を半導体素子電極へ強固に接合し、高耐熱化を図ることができる半導体装置及びその製造方法を提供することにある。
上記目的を達成するために、請求項１に係る発明は、半導体素子の電極表面（最上面）にアルミニウム層を形成し、この電極に銅線をワイヤボンディングする半導体装置において、上記半導体素子の基板として炭化珪素（ＳｉＣ）を用いると共に、上記電極のアルミニウム下層の金属としてチタンを用い、上記銅線と上記電極のアルミニウム下層の上記チタンとの間に、ピュアなアルミニウムが存在しない状態の銅−アルミニウム化合物を形成したことを特徴とする。
請求項２の発明は、上記銅−アルミニウム化合物は、Ａｌ２Ｃｕ３、Ａｌ４Ｃｕ９、ＡｌＣｕ３又はＡｌＣｕ４（所謂、銅リッチの銅−アルミニウム化合物）であることを特徴とする。即ち、これらのいずれか一つ又はこれらのいくつかを含む化合物が形成される。
請求項３の発明は、ワイヤボンディング前の電極には、厚さ数μｍ程度の上記チタンの上に厚さ数μｍ〜１０μｍ程度のアルミニウム層を形成することを特徴とする。
請求項４の発明は、半導体素子の電極表面にアルミニウム層を形成し、この電極に銅線を接続する半導体装置の製造方法において、上記半導体素子の基板として炭化珪素を用いると共に、上記電極のアルミニウム下層の金属としてチタンを用い、上記銅線を上記電極のアルミニウム層に対し超音波振動を与えながらワイヤボンディングし、上記銅線と上記電極のアルミニウム下層の上記チタンとの間に、ピュアなアルミニウムが存在しない状態の銅−アルミニウム化合物を形成したことを特徴とする。
請求項５に係る発明は、半導体装置の製造方法において、ワイヤボンディング前の電極には、厚さ数μｍ程度の上記チタンの上に厚さ数μｍ〜１０μｍ程度のアルミニウム層を形成することを特徴とする。
上記の構成によれば、半導体素子の基板に電極としてチタン層が形成され、このチタン層の上に、１０μｍ厚のアルミニウム層が形成されており、このアルミニウムに対し、銅線が、超音波振動を与えながらワイヤボンディグ（ボールボンディングやウエッジボンディングの技術）されることにより、銅線とチタン層（電極のアルミニウム下層金属）との間に、薄い銅−アルミニウム（金属）化合物が形成される。即ち、電極上のアルミニウムと銅との反応により、銅線とチタン層との間に、Ａｌ２Ｃｕ３、Ａｌ４Ｃｕ９、ＡｌＣｕ３、ＡｌＣｕ４の銅リッチの銅−アルミニウム化合物やＡｌＣｕ等が形成される。
本発明の半導体装置及びその製造方法によれば、従来と同様に、半導体素子の電極表面にアルミニウム材を用いることができ、電極表面にアルミニウムが形成されている従来の半導体素子をそのまま使用することができ、銅線の場合でも、設備の大掛かりな変更が不要となる。
また、相対的に硬い銅−アルミニウム化合物の存在により、線径に関係なく銅線が半導体素子へ強固に接続され、銅線とチタンとの間にピュアなアルミニウムが存在する場合と比較して、半導体装置のパワーサイクル（熱サイクル）疲労による内部配線の断線（破断）進行を良好に防ぐことができ、高耐熱化を図ることができるという効果がある。
更に、アルミニウム下層金属としてチタンを用い、半導体素子の基板として、炭化珪素を用いることにより、電極表面のアルミニウムを無駄に厚く形成する必要がないという効果がある。即ち、チタンや炭化珪素は材質が硬く、ワイヤボンディング時に半導体素子やその電極に与えられるダメージが小さくなるため、電極表面のアルミニウム厚は数μｍ〜１０μｍ程度あればよく、従来のように、ダメージ緩和のために電極表面に形成するアルミニウム厚を厚くする必要がない。
本発明の実施例に係るパワー半導体装置の電極への銅線接続部の構成を示し、図（Ａ）は銅線接続前の一部断面図、図（Ｂ）は銅線接続後の一部断面図である。 実施例のパワー半導体装置の電極への銅線接続部の銅−アルミニウム化合物を同定した結果を示す図（図面代用写真）である。 実施例の構成で温度サイクル試験をした後の電極銅線接続部の状態を示す断面図である。 実施例のパワー半導体装置（ダイオード）の構成を示し、図（Ａ）は樹脂を透視した状態の側面図、図（Ｂ）は樹脂を透視した状態の平面図である。
図１乃至図３には、本発明の実施例に係るパワー半導体装置（例えばダイオード）の電極と銅線の接続部の構成が示され、図４には、パワー半導体装置の構成が示されている。図４において、パワー半導体装置は、パワー半導体素子１０の下面側の電極（カソード）１１が半田１２により金属リードフレーム１３へ固着され、この金属リードフレーム１３の内部リード部１４とパワー半導体素子１０の上面側の電極（アノード）１５が銅線１６により接続される。また、上記金属リードフレーム１３には同一素材の外部電極１７ａ、上記内部リード部１４には同一素材の外部電極１７ｂが接続され、パワー半導体素子１０の全体は樹脂１８にて封止される。
図１（Ａ）において、パワー半導体素子１０は、その基板に炭化珪素（ＳｉＣ）が用いられ、この炭化珪素基板の上に、上面側の電極１５として、数μｍ厚のチタン層２０が形成され、その上に数μｍ〜１０μｍ厚のアルミニウム層２１が形成される。また、この電極１５の周囲には、ポリイミド等からなる保護膜２２が設けられる。
そして、上記アルミニウム層２１に対して銅線１６がワイヤボンディングされることにより、図１（Ｂ）のように、銅線１６とチタン層２０との間に、銅−アルミニウム化合物（合金層）２３が形成される。即ち、実施例では、超音波振動及び加重を与えながら、ウエッジボンディングを施すことで、アルミニウム層２１が掻き出されながら、銅線１６の底面側に銅−アルミニウム化合物２３を形成することができる。上記のウエッジボンディングではなく、超音波振動（及び熱や圧力）を与えながら、ボールボンディングを行うことで、銅−アルミニウム化合物２３を形成することも可能である。なお、図１（Ｂ）に示すように、銅−アルミニウム化合物２３は必ずしも接合面全面に形成する必要はなく、所望の接合強度を保つことができる範囲で銅−アルミニウム化合物２３が形成されていればよい。例えば、ウエッジボンディングを行う場合は、キャピラリーにより押圧される範囲に銅−アルミニウム化合物２３が形成されることになる。
図２には、上記銅−アルミニウム化合物２３の同定結果（ナノ電子線回折像観察）が示されており、この図２によれば、銅線１６とチタン２０の間に、銅−アルミニウム化合物２３として、Ａｌ４Ｃｕ９部２３ａとＡｌＣｕ部２３ｂが形成配置されていることが分かる。
図３には、実施例での温度サイクル試験後の銅線接続部の状態が示されており、−６５〜１５０℃の温度サイクルを５０００サイクル（cyc）行った試験では、銅線接続部の断線は生じない結果となった。ピュアなアルミニウムは、破断強度が低く、従来のように、アルミニウム線を電極アルミニウム層に接続する場合、−６５〜１５０℃の温度サイクルでは、約３０００サイクル程度で断線（破断）し、この破断は接合部端から進行することが分かっている。これに対し、実施例では、図３に示されるように、５０００サイクルの温度サイクル試験後で、ワイヤの１／３程度にクラック２４が入るのみであった。
即ち、銅線１６とチタン２０の間（ワイヤ接合部）に、ピュアなアルミニウムを配置せず、Ａｌ４Ｃｕ９部２３ａのような強度の高い銅リッチの銅−アルミニウム化合物２３が配置されることで、銅線１６が電極１５に対し強固に接合される。この銅リッチのその他の銅−アルミニウム化合物２３としては、Ａｌ２Ｃｕ３、ＡｌＣｕ３、ＡｌＣｕ４等があり、これらの相対的に硬い化合物を一つ又は複数形成することで、銅線１６の強固な接合が可能となる。
また、実施例では、アルミニウム層２１の下に硬い材質のチタン層２０を設け、またパワー半導体素子１０の基板として硬い材質の炭化珪素を用いたので、超音波振動を用いたワイヤボンディングの際にパワー半導体素子１０に与えられるダメージが小さくなる。従って、電極１５のアルミニウム層２１の厚みは数μｍ〜１０μｍ程度でよく、ダメージ緩和のためにアルミニウム量を多くする必要はない。
更に、実施例は、７５μｍ以上の銅線をウエッジボンディングによって容易にかつ強固に接続できるので、特に太径の銅線を使用するパワー半導体装置において高耐熱性等の良好な特性を得ることができ、利用価値も高いという利点がある。
実施例では、アルミニウム下層金属としてチタン（２０）を用いたが、このアルミニウム下層金属に、銅等を使用してもよく、また半導体素子１０の基板として炭化珪素を用いたが、窒化ガリウム（ＧａＮ）、シリコン、ダイヤモンド等を使用することもできる。
１０…パワー半導体素子、 １１…裏面側電極、
１３…金属リードフレーム、 １４…内部リード部、
１５…表面側電極、 １６…銅線、
２０…チタン層、 ２１…アルミニウム層、
２３…銅−アルミニウム化合物、
２３ａ…Ａｌ４Ｃｕ９部、 ２３ｂ…ＡｌＣｕ部。

Claims (5)

  1. 半導体素子の電極表面にアルミニウム層を形成し、この電極に銅線をワイヤボンディングする半導体装置において、
    上記半導体素子の基板として炭化珪素を用いると共に、上記電極のアルミニウム下層の金属としてチタンを用い、
    上記銅線と上記電極のアルミニウム下層の上記チタンとの間に、ピュアなアルミニウムが存在しない状態の銅−アルミニウム化合物を形成したことを特徴とする半導体装置。
  2. 上記銅−アルミニウム化合物は、Ａｌ２Ｃｕ３、Ａｌ４Ｃｕ９、ＡｌＣｕ３又はＡｌＣｕ４であることを特徴とする請求項１記載の半導体装置。
  3. ワイヤボンディング前の電極には、厚さ数μｍ程度の上記チタンの上に厚さ数μｍ〜１０μｍ程度のアルミニウム層を形成することを特徴とする請求項１又は２記載の半導体装置。
  4. 半導体素子の電極表面にアルミニウム層を形成し、この電極に銅線を接続する半導体装置の製造方法において、
    上記半導体素子の基板として炭化珪素を用いると共に、上記電極のアルミニウム下層の金属としてチタンを用い、
    上記銅線を上記電極のアルミニウム層に対し超音波振動を与えながらワイヤボンディングし、上記銅線と上記電極のアルミニウム下層の上記チタンとの間に、ピュアなアルミニウムが存在しない状態の銅−アルミニウム化合物を形成したことを特徴とする半導体装置の製造方法。
  5. ワイヤボンディング前の電極には、厚さ数μｍ程度の上記チタンの上に厚さ数μｍ〜１０μｍ程度のアルミニウム層を形成することを特徴とする請求項４記載の半導体装置の製造方法。
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US9245954B2 (en) 2016-01-26
TW201349368A (zh) 2013-12-01
KR20130129066A (ko) 2013-11-27
JP2013243166A (ja) 2013-12-05
US20130306985A1 (en) 2013-11-21
DE102012221025A1 (de) 2013-12-05
KR101951957B1 (ko) 2019-02-25

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