JPH08293522A - 半導体装置の耐熱電極 - Google Patents

半導体装置の耐熱電極

Info

Publication number
JPH08293522A
JPH08293522A JP7098486A JP9848695A JPH08293522A JP H08293522 A JPH08293522 A JP H08293522A JP 7098486 A JP7098486 A JP 7098486A JP 9848695 A JP9848695 A JP 9848695A JP H08293522 A JPH08293522 A JP H08293522A
Authority
JP
Japan
Prior art keywords
thin film
heat
thickness
silicide
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP7098486A
Other languages
English (en)
Inventor
Eiji Kamiyama
栄治 神山
Kazuhiro Fusegawa
和宏 府瀬川
Teruzo Ito
輝三 伊藤
Yasuyoshi Tomiyama
能省 富山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIKYU KANKYO SANGYO GIJUTSU
CHIKYU KANKYO SANGYO GIJUTSU KENKYU KIKO
Mitsubishi Materials Corp
Original Assignee
CHIKYU KANKYO SANGYO GIJUTSU
CHIKYU KANKYO SANGYO GIJUTSU KENKYU KIKO
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIKYU KANKYO SANGYO GIJUTSU, CHIKYU KANKYO SANGYO GIJUTSU KENKYU KIKO, Mitsubishi Materials Corp filed Critical CHIKYU KANKYO SANGYO GIJUTSU
Priority to JP7098486A priority Critical patent/JPH08293522A/ja
Publication of JPH08293522A publication Critical patent/JPH08293522A/ja
Withdrawn legal-status Critical Current

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Abstract

(57)【要約】 【目的】 １５０℃以上の高温に対して耐熱性があり、
Ａｕパッド部の密着強度が高くＡｕパッド部に剥離現象
を生じず、しかもＡｕワイヤのボンディング性が良好な
半導体装置の耐熱電極を得る。 【構成】 半導体チップ１１上に形成された高融点メタ
ルシリサイドからなる配線部１５と、この配線部上に形
成されＴｉＮ，ＴａＮ，ＺｒＮ，ＶＮ又はＨｆＮのいず
れかからなるバリアメタル層１８と、このバリアメタル
層上に形成されＴｉ，Ｔａ，Ｚｒ，Ｖ又はＨｆの金属薄
膜２１ａと、この金属薄膜上に形成されたＮｉ薄膜２１
ｂと、このＮｉ薄膜上に形成されたＡｕパッド部１９と
を備える。

Description

【発明の詳細な説明】
【０００１】
【産業上の利用分野】本発明は１５０℃以上の高温下で
使用され、特に２００〜４５０℃程度の高温下で多用さ
れ、６００℃の温度でも使用可能な半導体装置の耐熱電
極に関する。更に詳しくは耐熱性のあるＡｕパッド部に
より構成された端子電極となる半導体装置の耐熱電極に
関するものである。
【０００２】
【従来の技術】この種の高温下で使用される半導体装置
では、例えば図７に示すようにＳｉＣのような半導体チ
ップ１上にソース領域２ａとドレイン領域２ｂを絶縁膜
（ＳｉＯ2）３を挟んで形成した後、このソース領域２
ａ及びドレイン領域２ｂ上にそれぞれソース電極及びド
レイン電極となる高融点メタルシリサイド（例えばＷＳ
ｉ）のような配線部４ａ，４ｂを設け、更に絶縁膜３上
にゲート電極となる高融点メタルシリサイド（例えばＷ
Ｓｉ）のような配線部４ｃを設けることによりトランジ
スタ構造が形成される。この半導体装置５はチップ１を
ろう材５ａを介してパッケージ本体６ａに固定し、パッ
ケージ本体６ａのＡｕめっき７ａが施されたターミナル
ポスト７とチップ１の配線部４ａとをＡｕワイヤ９ａで
ボンディングした後、蓋６ｂで封止される。
【０００３】本発明のような高温下で使用される半導体
装置５においては、この配線部４ａとターミナルポスト
７とをＡｕワイヤ９ａでボンディング接続するために、
配線部４ａ上にＡｕパッド部９を形成する必要がある。
しかし、配線部４ａに直接Ａｕパッド部９を形成して例
えば４００℃の高温下で使用した場合には、Ａｕの融点
（１０６４℃）に対してＡｕ−Ｓｉの共晶点は３６３℃
とかなり低温であることから、Ａｕパッド部９の主成分
であるＡｕがＡｕパッド部９と接触するメタルシリサイ
ドに含まれるＳｉと反応してメタルシリサイドに溶け込
み、配線部４ａの耐熱性を低下させ、機械的強度も劣化
させてしまう。
【０００４】この高温時のＡｕのメタルシリサイドへの
固溶を防ぐために、図８に示すように配線部４ａ上にＴ
ｉＮのような耐熱性のあるバリアメタル層８を介してＡ
ｕパッド部９を積層し、その後Ａｕワイヤ９ａをＡｕパ
ッド部９とターミナルポスト７にボンディングして接続
することが試験的に行われている。
【０００５】
【発明が解決しようとする課題】しかし、バリアメタル
層を構成するＴｉＮのような窒化物（ナイトライド）は
Ａｕに対する密着性が悪いという不具合があった。この
ため、メタルシリサイドの配線部上にバリアメタル層を
介してＡｕパッド部を形成した場合、このＡｕパッド部
にＡｕワイヤをボンディングした後にこのボンディング
ワイヤに外力が加わわったときにＡｕパッド部がバリア
メタル層から剥離する問題点があった。本発明の目的
は、１５０℃以上の高温に対して耐熱性があり、Ａｕパ
ッド部の密着強度が高くＡｕパッド部に剥離現象を生じ
ず、しかもＡｕワイヤのボンディング性が良好な半導体
装置の耐熱電極を提供することにある。
【０００６】
【課題を解決するための手段】図１（ａ）に示すよう
に、本発明の半導体装置の耐熱電極は、半導体チップ１
１上に形成された高融点メタルシリサイドからなる配線
部１５と、この配線部１５上に形成されたＴｉＮからな
るバリアメタル層１８と、このバリアメタル層１８上に
形成されたＴｉからなる金属薄膜２１ａと、この金属薄
膜２１ａ上に形成されたＮｉ薄膜２１ｂと、このＮｉ薄
膜２１ｂ上に形成されたＡｕパッド部１９とを備えたも
のである。
【０００７】なお、本発明のバリアメタル層１８はＴｉ
Ｎが最適であるがこれに限らず、Ａｕの高融点メタルシ
リサイドへの固溶を防止可能なバリア性を有するナイト
ライドであれば、ＴａＮ，ＺｒＮ，ＶＮ又はＨｆＮのい
ずれかでもよい。また本発明の金属薄膜２１ａはＴｉＮ
に最適なＴｉに限らず、バリアメタル層の金属成分に相
応して、Ｔａ，Ｚｒ，Ｖ又はＨｆのいずれかでもよい。
本発明の半導体チップ１１はＳｉＣから作られたチップ
が好ましいが、ＳｉＣに限らずＧａＡｓ，ＧａＮ，高温
動作用Ｓｉ等の耐熱性のある半導体材料から作られたチ
ップでもよい。バリアメタル層１８の膜厚ｔ1の下限値
は、バリアメタル層のＡｕに対するバリア機能を考慮す
ると、３００オングストローム以上であることが好まし
い。この膜厚ｔ1の上限値は、バリアメタル層の熱膨張
係数と配線部の熱膨張係数との差に起因して、積層後の
温度変化に際して耐熱電極２０のパッド部が剥離した
り、割れが発生しなければ特に制限されないが、２００
０オングストローム以下であることが好ましい。金属薄
膜２１ａの膜厚ｔ2及びＮｉ薄膜２１ｂの膜厚ｔ3は、Ａ
ｕパッド部１９の密着強度を高めるためにそれぞれ２０
オングストローム以上であることが好ましく、積層後高
温時にＡｕパッド部１９のＡｕ中にＮｉが溶け込む量を
抑制して、このＡｕパッド部へのＡｕワイヤのワイヤボ
ンディング特性を良好に保つために１０００オングスト
ローム以下であることが好ましい。
【０００８】特に、バリアメタル層１８の膜厚ｔ1は５
００オングストローム以上１５００オングストローム以
下の範囲内にあることがより好ましく、金属薄膜２１ａ
の膜厚ｔ2は５０オングストローム以上５００オングス
トローム以下の範囲内にあることがより好ましく、Ｎｉ
薄膜２１ｂの膜厚ｔ3は５０オングストローム以上５０
０オングストローム以下の範囲内にあることがより好ま
しい。また高融点メタルシリサイドとしては、共晶温度
が９５０℃以上のケイ化タングステン、ケイ化チタン、
ケイ化コバルト、ケイ化ニッケル、ケイ化モリブデン、
ケイ化タンタル等が例示される。
【０００９】また本発明の耐熱電極は、上記配線部１
５、バリアメタル層１８、金属薄膜２１ａ、Ｎｉ薄膜２
１ｂ及びＡｕパッド部１９の積層体のみの構成に限らず
に、この積層体を更に真空中又は不活性ガス中、５００
〜９００℃で熱処理を施すことにより、バリアメタル層
１８、金属薄膜２１ａ及びＮｉ薄膜２１ｂを、図６に示
すように３００オングストローム以上２０００オングス
トローム以下の厚さｔ4を有するＴｉ，Ｔａ，Ｚｒ，Ｖ
又はＨｆのいずれかとＮｉとの窒素含有の合金層２１に
したものも含む。ここで厚さｔ4は上述した膜厚ｔ1とｔ
2とｔ3を加えたものである。
【００１０】
【作用】高融点メタルシリサイドの配線部とＡｕパッド
部との間に上記所定の膜厚のバリアメタル層と金属薄膜
とＮｉ薄膜を介装させることにより積層体を形成し、必
要によりこの積層体を真空中又は不活性ガス中、５００
〜９００℃で１〜１２０分間熱処理すると、ＴｉＮ，Ｔ
ａＮ，ＺｒＮ，ＶＮ又はＨｆＮのいずれかからなるバリ
アメタル層が配線部のメタルシリサイドと化学結合して
密着する。同時にＴｉ，Ｔａ，Ｚｒ，Ｖ又はＨｆのいず
れかの金属がバリアメタル層と密着する一方、Ｎｉ薄膜
のＮｉと合金層を形成する。この合金層中のＮｉにＡｕ
パッド部のＡｕが程良く固溶するためＡｕパッド部がこ
の合金層に堅固に密着する。
【００１１】
【実施例】次に、本発明の実施例を比較例とともに説明
する。 ＜実施例１〜９＞図１（ａ）に示すように、先ずＳｉＣ
からなる半導体基板１１上に０．５μｍ厚のＳｉＯ2か
らなる絶縁膜１４を介して０．５μｍ厚のＷＳｉからな
る配線部１５を形成した。次いでこの配線部１５上に表
１に示される厚さ（単位：オングストローム）で窒化チ
タン（ＴｉＮ）膜１８、チタン（Ｔｉ）膜２１ａ及びＮ
ｉ膜２１ｂをこの順に形成し、更にその上に１．０μｍ
厚のＡｕパッド部１９を形成した。ＴｉＮ膜１８はター
ゲットとしてＴｉを用いてアルゴンに窒素を５０％混合
したガス中で反応性スパッタリングを行うことにより成
膜し、Ｔｉ膜２１ａはターゲットとしてＴｉを用いてア
ルゴン１００％の不活性ガス中でスパッタリングを行う
ことにより成膜した。またＮｉ膜２１ｂはターゲットと
してＮｉを用い、Ａｕパッド部１９はターゲットとして
Ａｕを用いて、それぞれアルゴン１００％の不活性ガス
中でスパッタリングを行うことにより成膜した。
【００１２】＜比較例１〜４＞配線部１５上に表１に示
される厚さで窒化チタン（ＴｉＮ）膜１８、チタン（Ｔ
ｉ）膜２１ａ及びＮｉ膜２１ｂを形成した以外は、実施
例１と同様にして耐熱電極を比較例毎に１００個作製し
た。
【００１３】＜評価その１＞図示しないが、実施例１〜
９及び比較例１〜４の耐熱電極を有する半導体基板をダ
イシングしてチップ化し、これらの半導体チップをＡｌ
−Ｓｉのろう材を用いて真空中、６５０℃で１０分間か
けてアルミナ基板にそれぞれ固定した。図１（ｂ）に示
すように、実施例１〜９及び比較例１〜４のそれぞれに
ついて、耐熱電極２０のＡｕパッド部１９と別の耐熱電
極２０’のＡｕパッド部１９’の間を３８μｍφのＡｕ
ワイヤ２５で接続するために超音波によるワイヤボンデ
ィングを行った。耐熱電極２０’は耐熱電極２０と同様
に構成された。このボンディングしたＡｕワイヤ２５の
中央に引張り試験機のフック２６を掛けて０．２５ｍｍ
／秒の速度で引上げた。ワイヤボンディング部の破壊は
実施例１〜９においてはいずれも引張り応力が９〜１１
ｇｆのときに起きた。一方比較例１〜４においては多少
のバラツキがあるものの、殆ど５ｇｆ以下の引張り応力
において破壊した。その破壊の形態を分類した結果を表
１に示す。表中、符号「Ａ」はＡｕワイヤが付いたまま
Ａｕパッド部が配線部から剥離する「膜剥離」の個数
を、符号「Ｂ」はワイヤがＡｕパッド部の接続箇所であ
るワイヤの付け根から切れる「ネック切れ」の個数を、
符号「Ｃ」はフックのところでワイヤが切れる「ワイヤ
切れ」の個数を、符号「Ｄ」はＡｕワイヤが実質的に耐
熱電極に接続していない「ボンディング不良」の個数を
それぞれ示す。
【００１４】
【表１】
【００１５】表１から明らかなように、Ｎｉ薄膜の膜厚
ｔ3が１０オングストロームの比較例１の耐熱電極では
９８％が膜剥離を引き起こし、Ｎｉ膜の膜厚ｔ3が２０
００オングストロームの比較例２の耐熱電極では７４％
がボンディング不良を引き起こした。また金属薄膜であ
るＴｉ膜の膜厚ｔ2が１０オングストロームの比較例３
の耐熱電極では９７％が膜剥離を引き起こし、Ｔｉ膜の
膜厚ｔ2が２０００オングストロームの比較例４の耐熱
電極では６６％がボンディング不良を引き起こした。こ
れに対して、各膜厚ｔ1〜ｔ3が本発明の範囲内にある実
施例１〜９の耐熱電極では８５％以上がネック切れかワ
イヤ切れを引き起こした。このことから実施例１〜９の
耐熱電極ではＡｕパッド部の堅固な密着性とＡｕワイヤ
の良好なボンディング性が立証された。
【００１６】＜実施例１０，１１＞図示しないが、複数
のＳｉチップ上に０．５μｍ厚のＷＳｉからなる配線部
をそれぞれ形成し、この配線部上に１５００オングスト
ローム厚のＴｉＮ膜と、１００オングストローム厚のＴ
ｉ膜と、１００オングストローム厚のＮｉ膜をこの順に
それぞれ形成し、更にその上に１．０μｍ厚のＡｕパッ
ド部をそれぞれ形成した。これらのサンプルの一部を実
施例１０のサンプルＥとした。これらのサンプルの残り
を真空中、６５０℃で１０分間の熱処理した。このサン
プルを実施例１１のサンプルＦとした。
【００１７】＜比較例５，６＞実施例１０のＮｉ膜の代
わりに１００オングストローム厚のＣｕ膜を形成し、Ａ
ｕパッド部を０．２μｍの厚さで形成した。それ以外は
実施例１０と同様にしてサンプルを作製した。これらの
サンプルの一部を比較例５のサンプルＧとした。これら
のサンプルの残りを実施例１１と同様に熱処理して、こ
のサンプルを比較例６のサンプルＨとした。
【００１８】＜評価その２＞実施例１０，１１及び比較
例５，６のサンプルＥ〜Ｈについて、それぞれ表面分析
法であるオージェ分析法により耐熱電極の表面から深さ
方向の組成を調べた。その結果を図２〜図５に示す。こ
れらの図において、横軸はアルゴンガスのスパッタリン
グ時間を、縦軸は電子ビームにより検出される元素量で
あるオージェの信号強度をそれぞれ示す。ＣｕはＡｕに
１００％固溶する金属であるけれども、図４に示す比較
例５の熱処理前のサンプルＧに比べて、図５に示す比較
例５の熱処理後のサンプルＨではＡｕがＷＳｉの配線部
中に拡散し、ＣｕによりＴｉＮのＡｕに対するバリア性
が低下していた。これに対してＮｉもＡｕに１００％固
溶する金属であるにも拘わらず、図２に示す実施例１０
の熱処理前のサンプルＥに比べて、図３に示す実施例１
０の熱処理後のサンプルＦではＡｕがＷＳｉの配線部中
に拡散しておらず、ＴｉＮのＡｕに対するバリア性が保
たれていた。
【００１９】
【発明の効果】以上述べたように、本発明によれば、高
融点メタルシリサイドの配線部上に所定の膜厚でＴｉＮ
等からなるバリアメタル層とＴｉ等からなる金属薄膜と
Ｎｉ薄膜とを介してＡｕパッド部を形成することによ
り、１５０℃以上の高温に対して耐熱性があり、Ａｕパ
ッド部の密着強度が高くＡｕパッド部に剥離現象を生じ
ず、しかもＡｕワイヤのボンディング性が良好な半導体
装置の耐熱電極を得ることができる。
【図面の簡単な説明】
【図１】（ａ）本発明実施例のワイヤボンディング前の
耐熱電極の断面図。 （ｂ）本発明実施例のワイヤボンディング後の耐熱電極
の断面図。
【図２】実施例１０の熱処理前の耐熱電極サンプルＥの
オージェ分析結果を示す図。
【図３】実施例１１の熱処理後の耐熱電極サンプルＦの
オージェ分析結果を示す図。
【図４】比較例５の熱処理前の耐熱電極サンプルＧのオ
ージェ分析結果を示す図。
【図５】比較例６の熱処理後の耐熱電極サンプルＨのオ
ージェ分析結果を示す図。
【図６】本発明の別の耐熱電極の断面図。
【図７】金属薄膜とＮｉ薄膜を介装することなく配線部
にＡｕパッド部を形成した耐熱電極の断面図。
【図８】金属薄膜とＮｉ薄膜を介装することなく配線部
にＡｕパッド部を形成した別の耐熱電極の断面図。
【符号の説明】
１１ 半導体基板（半導体チップ） １５ 高融点メタルシリサイドからなる配線部 １８ バリアメタル層 １９ Ａｕパッド部 ２０ 耐熱電極 ２１ 合金層 ２１ａ 金属薄膜 ２１ｂ Ｎｉ薄膜
─────────────────────────────────────────────────────
【手続補正書】
【提出日】平成７年６月２７日
【手続補正１】
【補正対象書類名】図面
【補正対象項目名】図２
【補正方法】変更
【補正内容】
【図２】
───────────────────────────────────────────────────── フロントページの続き (72)発明者 伊藤 輝三 埼玉県大宮市北袋町１丁目297番地 三菱 マテリアル株式会社中央研究所内 (72)発明者 富山 能省 埼玉県大宮市北袋町１丁目297番地 三菱 マテリアル株式会社中央研究所内

Claims (5)

    【特許請求の範囲】
  1. 【請求項１】 半導体チップ(11)上に形成された高融点
    メタルシリサイドからなる配線部(15)と、 前記配線部(15)上に形成されＴｉＮ，ＴａＮ，ＺｒＮ，
    ＶＮ又はＨｆＮのいずれかからなるバリアメタル層(18)
    と、 前記バリアメタル層(18)上に形成されＴｉ，Ｔａ，Ｚ
    ｒ，Ｖ又はＨｆのいずれかからなる金属薄膜(21a)と、 前記金属薄膜(21a)上に形成されたＮｉ薄膜(21b)と、 前記Ｎｉ薄膜(21b)上に形成されたＡｕパッド部(19)と
    を備えた半導体装置の耐熱電極。
  2. 【請求項２】 バリアメタル層(18)の厚さ(t1)が３００
    オングストローム以上２０００オングストローム以下の
    範囲内にあって、金属薄膜(21a)の厚さ(t2)が２０オン
    グストローム以上１０００オングストローム以下の範囲
    内にあって、Ｎｉ薄膜(21b)の厚さ(t3)が２０オングス
    トローム以上１０００オングストローム以下の範囲内に
    ある請求項１記載の半導体装置の耐熱電極。
  3. 【請求項３】 バリアメタル層(18)の厚さ(t1)が５００
    オングストローム以上１５００オングストローム以下の
    範囲内にあって、金属薄膜(21a)の厚さ(t2)が５０オン
    グストローム以上５００オングストローム以下の範囲内
    にあって、Ｎｉ薄膜(21b)の厚さ(t3)が５０オングスト
    ローム以上５００オングストローム以下の範囲内にある
    請求項２記載の半導体装置の耐熱電極。
  4. 【請求項４】 半導体チップ(11)上に形成された高融点
    メタルシリサイドからなる配線部(15)と、 前記配線部(15)上に形成され３００オングストローム以
    上２０００オングストローム以下の厚さ(t4)を有するＴ
    ｉ，Ｔａ，Ｚｒ，Ｖ又はＨｆのいずれかとＮｉとの窒素
    含有の合金層(21)と、 前記合金層(21)上に形成されたＡｕパッド部(19)とを備
    えた半導体装置の耐熱電極。
  5. 【請求項５】 高融点メタルシリサイドがケイ化タング
    ステン、ケイ化チタン、ケイ化コバルト、ケイ化ニッケ
    ル、ケイ化モリブデン又はケイ化タンタルである請求項
    １ないし４いずれか記載の半導体装置の耐熱電極。
JP7098486A 1995-04-24 1995-04-24 半導体装置の耐熱電極 Withdrawn JPH08293522A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7098486A JPH08293522A (ja) 1995-04-24 1995-04-24 半導体装置の耐熱電極

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7098486A JPH08293522A (ja) 1995-04-24 1995-04-24 半導体装置の耐熱電極

Publications (1)

Publication Number Publication Date
JPH08293522A true JPH08293522A (ja) 1996-11-05

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19741436A1 (de) * 1997-09-19 1998-12-17 Siemens Ag Halbleiterbauelement
JPH1126460A (ja) * 1997-07-03 1999-01-29 Nippon Telegr & Teleph Corp <Ntt> 半導体装置およびその製造方法
US6417568B1 (en) 1999-03-12 2002-07-09 Nec Corporation Semiconductor device
US7372163B2 (en) 2003-08-11 2008-05-13 Rohm Co., Ltd. Semiconductor device and production method therefor
US7572726B2 (en) 2003-09-18 2009-08-11 International Business Machines Corporation Method of forming a bond pad on an I/C chip and resulting structure
CN102337508A (zh) * 2011-10-24 2012-02-01 沈阳大学 一种氮化钛/氮化铝/镍纳米多层薄膜的制备方法
JP2012129480A (ja) * 2010-12-17 2012-07-05 Seiko Instruments Inc 電子部品およびその製造方法
JP2013243166A (ja) * 2012-05-17 2013-12-05 New Japan Radio Co Ltd 半導体装置及びその製造方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1126460A (ja) * 1997-07-03 1999-01-29 Nippon Telegr & Teleph Corp <Ntt> 半導体装置およびその製造方法
DE19741436A1 (de) * 1997-09-19 1998-12-17 Siemens Ag Halbleiterbauelement
US6417568B1 (en) 1999-03-12 2002-07-09 Nec Corporation Semiconductor device
US7372163B2 (en) 2003-08-11 2008-05-13 Rohm Co., Ltd. Semiconductor device and production method therefor
US7943506B2 (en) 2003-08-11 2011-05-17 Rohm Co., Ltd. Semiconductor device and production method therefor
US7572726B2 (en) 2003-09-18 2009-08-11 International Business Machines Corporation Method of forming a bond pad on an I/C chip and resulting structure
JP2012129480A (ja) * 2010-12-17 2012-07-05 Seiko Instruments Inc 電子部品およびその製造方法
CN102337508A (zh) * 2011-10-24 2012-02-01 沈阳大学 一种氮化钛/氮化铝/镍纳米多层薄膜的制备方法
JP2013243166A (ja) * 2012-05-17 2013-12-05 New Japan Radio Co Ltd 半導体装置及びその製造方法

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