JPH06260538A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPH06260538A
JPH06260538A JP4763393A JP4763393A JPH06260538A JP H06260538 A JPH06260538 A JP H06260538A JP 4763393 A JP4763393 A JP 4763393A JP 4763393 A JP4763393 A JP 4763393A JP H06260538 A JPH06260538 A JP H06260538A
Authority
JP
Japan
Prior art keywords
semiconductor device
metal chip
metal
base substrate
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP4763393A
Other languages
English (en)
Inventor
Isao Komatsu
功 小松
Yoshikatsu Kuroda
能克 黒田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Heavy Industries Ltd
Original Assignee
Mitsubishi Heavy Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Heavy Industries Ltd filed Critical Mitsubishi Heavy Industries Ltd
Priority to JP4763393A priority Critical patent/JPH06260538A/ja
Publication of JPH06260538A publication Critical patent/JPH06260538A/ja
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
    • H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
    • H01L2224/48491—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being an additional member attached to the bonding area through an adhesive or solder, e.g. buffer pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]

Abstract

(57)【要約】 （修正有） 【目的】 例えば航空宇宙用製品の電子機器等に適用さ
れる半導体装置において、ウェッジボンディングするに
際し、金属ベース基板の絶縁層を破壊せず、パターン抵
抗を小さくする。 【構成】 回路基板である金属ベース１３にはんだ２４
を介して金属チップ２３を接合すると共に、該金属チッ
プ２３上面にアルミニウム（Ａｌ）ワイヤ１５をウェッ
ジボンディングしてなる。

Description

【発明の詳細な説明】
【０００１】
【産業上の利用分野】本発明は、例えば航空宇宙用製品
の電子機器等に適用される半導体装置に関する。
【０００２】
【従来の技術】従来の半導体装置の配線においては、図
６に示すように、ベース基板１１と絶縁層１２とからな
る金属ベース基板１３の絶縁層１２側には、導体層１４
が設けられており、この導体層１４の表面に、アルミニ
ウム製のワイヤ（以下、「Ａｌワイヤ」という）１５を
直接ウェッジボンディング（超音波接合）していた。
【０００３】
【発明が解決しようとする課題】ところで、Ａｌワイヤ
１５はウェッジボンディングにより接合されるが、その
際、金属ベース基板１３を構成する絶縁層１２を壊し、
ベース基板１１と導体層１４とが導通することがあると
いう問題がある。また、導体層１４のパターン抵抗が大
きくなり、損失が大きくなるという問題がある。
【０００４】本発明は、上記問題に鑑み、ウェッジボン
ディングするに際し、金属ベース基板の絶縁層を破壊せ
ず、パターン抵抗を小さくした半導体装置を提供するこ
とを目的とする。
【０００５】
【課題を解決するための手段】前記目的を達成する本発
明に係る半導体装置は、回路基板に金属チップを接合す
ると共に、該金属チップ上面にアルミニウム（Ａｌ）ワ
イヤをウェッジボンディングしてなることを特徴とす
る。
【０００６】
【作用】金属ベース基板上に金属チップを実装し、金属
チップにＡｌワイヤをウェッジボンディングしたことに
より、ウェッジボンディングの際、絶縁層を壊すことが
なくなった。さらに金属チップの抵抗が小さいためパタ
ーン抵抗を小さくするとができる。
【０００７】
【実施例】以下、本発明に係る好適な一実施例を図面を
参照して説明する。
【０００８】（実施例１）図１は本実施例に係る半導体
装置の断面図を示す。同図中、符号１３はベース基板１
１と絶縁層１２とからなる金属ベース基板を図示し、例
えばＣｕＷをベース基板１１としてその表面にＡｌ2 Ｏ
3 等の絶縁層１２を一様に形成したものである。符号１
４は、絶縁層１２の表面にＡｇ等の金属を蒸着させた導
体層を図示し、ここにＮｉメッキ２１及びＡｕメッキ２
２された例えばＣｕＷの金属チップ２３がはんだ２４に
よってはんだ付けされる。この金属チップ２３の上面に
Ａｌワイヤ１５を２本以上ウェッジボンディングして、
半導体装置を構成している。
【０００９】このようにＡｌワイヤ１５を金属チップ２
３上面にウェッジボンディングすることにより、金属ベ
ース基板１３の表面の絶縁層１２を壊すことがなくな
る。加えて電流が導体層１４より厚い金属チップ２３を
流れるため、Ａｌワイヤ１５間の抵抗を小さくすること
ができる。また、この際、Ａｌワイヤ間のパターン抵抗
を測定したところ、１桁以上小さくすることができた
（Ａｌワイヤ間が３mm離れている場合、Ａｇパターン抵
抗2.４×１０-2［Ω］に対し、金属チップ（ＣｕＷ）抵
抗1.７×１０-4［Ω］）。
【００１０】（実施例２）また図２に示すように、Ｃｕ
を金属チップ２３としてＣｕを使用した場合は、金属チ
ップ２３のＮｉメッキ２１及びＡｕメッキ２２は必要な
く、絶縁層１２の保護効果は実施例１と全く同様であっ
た。
【００１１】（実施例３）また図３に示されるように、
金属ベース基板１３上の導体層１４に導電性接着剤２４
を使用して例えばＡｌ等の金属チップ２３を接合する場
合も、金属チップ２３にＮｉメッキ２１及びＡｕメッキ
２２は必要なく、絶縁層１２の保護効果は実施例１と同
様であった。
【００１２】（実施例４）図４に示されるように、Ａｌ
ワイヤ１５を１本で配線した場合でも、絶縁層１２の保
護効果は実施例１と同様であった。
【００１３】（実施例５）さらに図５に示されるよう
に、金属ベース基板１３の絶縁層１２に非導電性接着剤
２５を使用して例えばＡｌ等の金属チップ２３を接合す
れば、導体層１４が不用となる。
【００１４】
【発明の効果】以上、実施例と述べたように本発明に係
る半導体装置は、Ａｌワイヤをウェッジボンディングす
る際に金属ベース基板の絶縁層を壊すことがなく、ベー
ス基板と導体層との導通が無くなった。
【図面の簡単な説明】
【図１】本発明の第１実施例に係る製品の断面図であ
る。
【図２】本発明の第２実施例に係る製品の断面図であ
る。
【図３】本発明の第３実施例に係る製品の断面図であ
る。
【図４】本発明の第４実施例に係る製品の断面図であ
る。
【図５】本発明の第５実施例に係る製品の断面図であ
る。
【図６】従来の製品を示す断面図である。
【符号の説明】
１１ ベース基板 １２ 絶縁層 １３ 金属ベース １４ 導体層 １５ Ａｌワイヤ ２１ Ｎｉメッキ ２２ Ａｕメッキ ２３ 金属チップ ２４ はんだ ２５ 非導電性接着剤

Claims (5)

    【特許請求の範囲】
  1. 【請求項１】 回路基板に金属チップを接合すると共
    に、該金属チップ上面にアルミニウム（Ａｌ）ワイヤを
    ウェッジボンディングしてなることを特徴とする半導体
    装置。
  2. 【請求項２】 請求項１の半導体装置において、前記回
    路基板のベース基板がＣｕＷ材料、Ｔｉ材料の少なくと
    も１つよりなることを特徴とする半導体装置。
  3. 【請求項３】 請求項１の半導体装置において、前記金
    属チップがＣｕＷ材料、Ｃｕ材料、Ａｌ材料の少なくと
    も１つよりなることを特徴とする半導体装置。
  4. 【請求項４】 請求項１の半導体装置において、前記金
    属チップの接合材料が、導電性，非導電性接着剤，はん
    だの少なくとも１つよりなることを特徴とする半導体装
    置。
  5. 【請求項５】 請求項１の半導体装置において、前記金
    属チップ表面にＮｉ及びＡｕをメッキすることを特徴と
    する半導体装置。
JP4763393A 1993-03-09 1993-03-09 半導体装置 Withdrawn JPH06260538A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4763393A JPH06260538A (ja) 1993-03-09 1993-03-09 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4763393A JPH06260538A (ja) 1993-03-09 1993-03-09 半導体装置

Publications (1)

Publication Number Publication Date
JPH06260538A true JPH06260538A (ja) 1994-09-16

Family

ID=12780637

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4763393A Withdrawn JPH06260538A (ja) 1993-03-09 1993-03-09 半導体装置

Country Status (1)

Country Link
JP (1) JPH06260538A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100873420B1 (ko) * 2002-09-10 2008-12-11 페어차일드코리아반도체 주식회사 서로 다른 와이어 본딩이 가능한 인쇄 회로 기판 및 이를채용한 반도체 전력용 모듈
WO2012076259A1 (de) * 2010-12-06 2012-06-14 Robert Bosch Gmbh Halbleiterbauelement mit erhöhter stabilität gegenüber thermomechanischen einflüssen sowie verfahren zur kontaktierung eines halbleiters
KR20130129066A (ko) 2012-05-17 2013-11-27 신니혼무센 가부시키가이샤 반도체 장치 및 그 제조 방법

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100873420B1 (ko) * 2002-09-10 2008-12-11 페어차일드코리아반도체 주식회사 서로 다른 와이어 본딩이 가능한 인쇄 회로 기판 및 이를채용한 반도체 전력용 모듈
WO2012076259A1 (de) * 2010-12-06 2012-06-14 Robert Bosch Gmbh Halbleiterbauelement mit erhöhter stabilität gegenüber thermomechanischen einflüssen sowie verfahren zur kontaktierung eines halbleiters
KR20130129066A (ko) 2012-05-17 2013-11-27 신니혼무센 가부시키가이샤 반도체 장치 및 그 제조 방법
DE102012221025A1 (de) 2012-05-17 2013-12-05 New Japan Radio Co. Ltd. Halbleitereinrichtung und Herstellungsverfahren derselben
US9245954B2 (en) 2012-05-17 2016-01-26 New Japan Radio Co., Ltd. Semiconductor device and production method thereof
DE102012221025B4 (de) 2012-05-17 2021-10-14 New Japan Radio Co. Ltd. Halbleitereinrichtung und Herstellungsverfahren derselben

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