JPH06151523A - ワイヤボンディング方法 - Google Patents

ワイヤボンディング方法

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Publication number
JPH06151523A
JPH06151523A JP4300781A JP30078192A JPH06151523A JP H06151523 A JPH06151523 A JP H06151523A JP 4300781 A JP4300781 A JP 4300781A JP 30078192 A JP30078192 A JP 30078192A JP H06151523 A JPH06151523 A JP H06151523A
Authority
JP
Japan
Prior art keywords
wire
bonding
capillary
electronic component
electrode pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4300781A
Other languages
English (en)
Inventor
Katsuaki Chiba
勝昭 千葉
Toshio Izawa
登志男 伊沢
Makoto Haneda
誠 羽田
Kazuhiro Ito
和弘 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
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Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4300781A priority Critical patent/JPH06151523A/ja
Publication of JPH06151523A publication Critical patent/JPH06151523A/ja
Pending legal-status Critical Current

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    • HELECTRICITY
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    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
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    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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Abstract

(57)【要約】 【目的】電子部品に接触面積の小さなワイヤボンディン
グをすることにより低容量化する。 【構成】キャピラリ底面の片面先端部でワイヤ側面を押
圧し、ワイヤつぶれ部が電極部よりはみ出さない構造と
する。又、ボンディング後にワイヤを機械的に切断し、
電界チャージを発生させない構成のワイヤボンダーとす
る。 【効果】(1)ワイヤのつぶれ形状が、電極面積と同等
もしくはそれより小さい構造の為、ボンディングによる
浮遊容量を低減し、低容量化が達成できる。 (2)ワイヤ切断後、電界チャージが発生せず電子部品
の破損が発生しない。

Description

【発明の詳細な説明】
【0001】
【産業上の利用分野】本発明は、電子部品とステムとを
低容量でボンディング可能にしたワイヤボンディング方
法に関する。
【0002】
【従来の技術】従来、超音波によるワイヤボンディング
で破損する電子部品の場合には、キャピラリを用いたA
uワイヤの熱圧着ネイルヘッドボールボンディング方法
を適用していた。しかし、通常の同方法では、Auのボ
ールを電子部品の電極パッドに熱圧着するため、電極パ
ッドからAuボールがはみ出して、浮遊容量が大きくな
っていた。このため、電子部品の微小なボンディングパ
ッドとステム及びパッケージへの低容量配線は、図1
(a)及び(b)に示すように、電子部品をステムにダ
イボンディングした後、図2に示すように、熱圧着ネイ
ルヘッドボールボンディング10により、ボンディング
部の微小電極パッドからのはみ出しを最小限に抑える為
に、φ15μmの極細線を使用していた。
【0003】
【発明が解決しようとする課題】本発明の目的は、電子
部品の微小パッドからはみ出さないで、φ15μmから
φ38μmのワイヤボンディングを実現し、ワイヤボン
ディングによる浮遊容量を低減することにある。
【0004】
【課題を解決するための手段】上記目的を達成する為
に、本発明はボンディングキャピラリ底面の片端のみを
ワイヤに押圧して接合を図る。
【0005】
【作用】本ボンディング方法は、ボンディングキャピラ
リ底面の片端のみをワイヤに押圧して電子部品の微小パ
ッドに微小接着しているため、接触ワイヤのはみ出しは
発生しない。従って、ボンディング浮遊容量も低減でき
る。
【0006】
【実施例】以下では本発明をAPD(Avalanche photo d
iode)への配線に適用した例について述べる。APDの
p電極は、Cr/Au(0.1/0.9μm厚)のメタル
で形成されている。また、p電極のワイヤボンディング
の面積は、50×50μmに設計されている。ワイヤ径
は、φ25μm及びφ38μmのAu線で配線してい
る。
【0007】以下に、APDとステム間のワイヤボンデ
ィング方法について述べる。
【0008】まず、図1(a)及び(b)に示すよう
に、APD1をステム7にAu/Sn共晶半田を用いて
320℃で溶着する。次に、ステム7を150℃の加熱
台(図示略)に固定した後、図3に示す工程に従ってワ
イヤボンディングを実施する。図3(a)は、約250
℃に加熱されたキャピラリ9の先端から出たAuワイヤ
8を整形し、APD1のp電極パッド4に第一のボンデ
ィングを行う。この時、p電極パッド4からはみ出さな
いようにキャピラリ9の底面の片側でAuワイヤ8を約
30gで押圧する。(b)は、APDのp電極から誘導
されたAu線をステムの配線ピンに第二のボンディング
を行う。その後、(c)に示すように、キャピラリを上
方に引き上げることにより、第二ボンディングワイヤの
ネックからワイヤを切断させる。次に、図4に示すよう
に、第一のボンディングで整形されたワイヤをピンセッ
トで除去し、完成した構成で、工程を終了する。
【0009】
【発明の効果】発明によれば、ワイヤボンディングによ
る浮遊容量は低減され、又、電子部品の電界チャージに
よる破損は無くなり、歩留の向上に大きく寄与する。
【図面の簡単な説明】
【図1】APDをステムにダイボンディングした説明
図。
【図2】従来例を示すAPDへのワイヤボンディングの
斜視図。
【図3】本発明の実施例を示すAPDへのワイヤボンデ
ィングの工程図。
【図4】本発明の実施例を示すAPDへのワイヤボンデ
ィングの斜視図。
【符号の説明】
1…APD、2…受光面,3…p電極、4…p電極ボン
ディングエリア、5…配線リード、6…Au/Sn半
田、7…ステム、8…Auワイヤ、9…キャピラリ、1
0…第一のボールボンディング、11…第二のボンディ
ング、12…第一のボンディング。
───────────────────────────────────────────────────── フロントページの続き (72)発明者 伊藤 和弘 東京都国分寺市東恋ケ窪1丁目280番地 株式会社日立製作所中央研究所内

Claims (3)

    【特許請求の範囲】
  1. 【請求項1】電子部品のワイヤボンディングパッドにワ
    イヤをボンディングする際、ネイルヘッドボンディング
    装置で、キャピラリ底面の片側のみを使って、ワイヤの
    接合面が電極面積と同等もしくはそれより小とする形状
    であることを特徴とするワイヤボンディング方法。
  2. 【請求項2】電子部品のワイヤボンディングパッドにワ
    イヤをボンディングする際、ネイルヘッドボンディング
    装置で、ボンディング後に機械的にワイヤを切断し、電
    界チャージによる電子部品の破損を発生させないことを
    特徴とするワイヤボンディング方法。
  3. 【請求項3】請求項1または2において、超音波による
    ワイヤボンディングで破損する電子部品に対して、前記
    超音波を使わない熱圧着法によるワイヤボンディング方
    法。
JP4300781A 1992-11-11 1992-11-11 ワイヤボンディング方法 Pending JPH06151523A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4300781A JPH06151523A (ja) 1992-11-11 1992-11-11 ワイヤボンディング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4300781A JPH06151523A (ja) 1992-11-11 1992-11-11 ワイヤボンディング方法

Publications (1)

Publication Number Publication Date
JPH06151523A true JPH06151523A (ja) 1994-05-31

Family

ID=17889021

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4300781A Pending JPH06151523A (ja) 1992-11-11 1992-11-11 ワイヤボンディング方法

Country Status (1)

Country Link
JP (1) JPH06151523A (ja)

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