JPH0567647A - 半導体チツプのフリツプチツプ接合方法 - Google Patents

半導体チツプのフリツプチツプ接合方法

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Publication number
JPH0567647A
JPH0567647A JP3229266A JP22926691A JPH0567647A JP H0567647 A JPH0567647 A JP H0567647A JP 3229266 A JP3229266 A JP 3229266A JP 22926691 A JP22926691 A JP 22926691A JP H0567647 A JPH0567647 A JP H0567647A
Authority
JP
Japan
Prior art keywords
chip
semiconductor chip
bumps
solder
circuit board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3229266A
Other languages
English (en)
Other versions
JP2555811B2 (ja
Inventor
Teru Nakanishi
輝 中西
Kazuaki Karasawa
一明 柄澤
Masayuki Ochiai
正行 落合
Kaoru Hashimoto
薫 橋本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
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Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3229266A priority Critical patent/JP2555811B2/ja
Priority to CA002077406A priority patent/CA2077406C/en
Priority to AU22094/92A priority patent/AU649559B2/en
Priority to US07/939,695 priority patent/US5284796A/en
Priority to KR92016258A priority patent/KR970001928B1/ko
Priority to DE69211456T priority patent/DE69211456T2/de
Priority to EP92308188A priority patent/EP0532297B1/en
Publication of JPH0567647A publication Critical patent/JPH0567647A/ja
Application granted granted Critical
Publication of JP2555811B2 publication Critical patent/JP2555811B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

(57)【要約】 【目的】 半導体チップのフリップチップ接合に関し、
信頼性を向上した接合方法を実用化することを目的とす
る。 【構成】 半導体チップ面上にマトリックス状に形成し
てある半田バンプを回路基板上にパターン形成してある
半田バンプに当接し、フリップチップ接合する工程が、
半導体チップに設けてある複数の半田バンプの外周に複
数のスタッドバンプを設ける工程と、この複数の半田バ
ンプとスタッドバンプとの間に切込み溝を設ける工程
と、半導体チップの半田バンプと回路基板の半田バンプ
とを当接した後に加熱して一体化する工程と、フリップ
チップ接合後に切込み溝の位置で折ってスタッドバンプ
を除去する工程とを含むことを特徴として半導体チップ
のフリップチップ接合方法を構成する。

Description

【発明の詳細な説明】
【０００１】
【産業上の利用分野】本発明は信頼性を向上した半導体
チップのフリップチップ接合方法に関する。情報処理技
術の進歩により情報処理装置の主体を占める半導体装置
は大容量化が必要であり、LSI やVLSIなどの集積回路が
実用化されている。
【０００２】こゝで、これらの集積回路素子は数mmから
なる半導体チップに単位のトランジスタがマトリックス
状に数多く形成されており、回路接続がワイヤボンディ
ングによる場合は半導体チップの裏面を共晶合金や接着
剤を用いて回路基板に接着した後、チップの周辺に設け
られている多数の電極端子（パッド）と回路基板に設け
られている多数の電極端子（パッド）とをワイヤボンデ
ング接続することにより導体線路との回路接続が行われ
ている。
【０００３】然し、LSI のような大容量素子について
は、かゝる方法は困難であり、これに代わっ半導体チッ
プの面上にマトリックス状に配列した半田バンプを設
け、このチップ面を下側にして回路基板に設けてあるバ
ンプと溶着するフリップチップ接合法が実用化されてい
る。
【０００４】この方法は半導体素子を配線基板に直接に
装着できることから、信号の伝送路を大幅に短縮するこ
とができ、そのため伝送損失を軽減することができる。
その装着方法としては、セラミックなどからなる回路基
板上に半導体チップに設けてある半田バンプと完全に位
置と形状が一致した半田バンプをマトリックス状に設け
ておき、両者を位置合わせして熔着し、回路接続する方
法が採られている。
【０００５】
【従来の技術】現在、半導体集積回路はシリコン(Si)を
用いて作られており、また大部分の回路基板はアルミナ
セラミックス或いはガラスセラミックスを用いて形成さ
れている。
【０００６】そして、先に記したようにLSI やVLSIなど
の半導体チップは回路基板とフリップチップ接合による
回路接続がとられつゝある。こゝで、発明者等は半導体
チップまたは回路基板上に多数の半田バンプを位置精度
よく形成する方法を提案している。（特願平02-118388)
そして、このようにして形成した半田バンプを用いてフ
リップチップ接合が行われている。
【０００７】いま、この従来方法を説明すると次のよう
になる。先ず、図２に示すようにガラス板や透明石英基
板のように平滑で耐熱性は優れているが、半田付けでき
ない透明基板１の上にメタルマスクを当接し、この状態
で半田を真空蒸着し、透明基板１の上に半田丘２を形成
する。（以上同図Ａ） 一方、半導体チップや回路基板などの被処理基板３のバ
ンプ形成位置には予め金(Au)などの材料を用い、真空蒸
着法などにより、半田バンプと大きさの等しいパッド４
を形成しておく。
【０００８】そして、被処理基板３を半田の融点以上に
加熱した状態で、マトリックス状に形成してあるパッド
４に透明基板１の半田丘２を位置合わせして当接する。
（以上同図Ｂ） このようにすると、半田丘２を構成する半田は透明基板
１とは接着性が悪く、一方、パッド４とは接着性が良い
ためにパッド４に転写され半田バンプ５ができ上がる。
（以上同図Ｃ） この形成法の特徴は被処理基板３の上に設けられている
パッド４と透明基板１の上に設けられている半田丘２と
の間に多少の位置ずれが存在していても、自己整合（Se
lf-Alignment) 効果が働き、パッド上に半球状の半田バ
ンプ５ができることである。
【０００９】次に、このようにして半導体チップ６に形
成した半田バンプ５と回路基板７に形成してある半田バ
ンプ５とを位置合わせし（以上同図Ｄ）、半田の融点以
上にまで回路基板７を加熱すると、半田バンプ５同士は
溶け合って太鼓状の玉になり、接合ができ上がる。（以
上同図Ｅ） 然し、このような接合方法をとると、半導体チップ６と
回路基板７との熱膨張係数の差に起因する応力が半田球
と両基板との接合部に集中することになり、信頼性向上
の面から好ましくない。
【００１０】そこで、半田球を中央がくびれたウエスト
（Waist)状とするために各種の方法が提案されている。
その一つは回路基板の上に複数のスペーサを置き、この
状態で半導体チップを接合することで、スペーサの厚さ
に相当する間隔を保持する方法である。
【００１１】然し、この方法は半導体チップの面積が小
さいためにスペーサを挿入する位置を確保する点に問題
があり、またスペーサの高さを一定に保持することも容
易ではなく、作業性の点から良い方法とは言えない。
【００１２】また、半田バンプの接合が終わった後に半
導体チップを引き上げて半田球をウエスト状にする方法
もあるが、信頼性の点から好ましくない。
【００１３】
【発明が解決しようとする課題】半田バンプを表面に備
えた半導体チップを半田バンプを設けた回路基板に当接
してフリップチップ接合を行う際、従来の方法では両者
の半田バンプは球状となり、この形状は回路基板と半導
体チップとの界面に応力が加わる点から好ましくなく、
中央がくびれたウエスト状とすることが好ましい。
【００１４】そこで、簡単な方法でこの形状を実現する
ことが課題である。
【００１５】
【課題を解決するための手段】上記の課題は半導体チッ
プ面上にマトリックス状に形成してある半田バンプを回
路基板上にパターン形成してある半田バンプに当接し、
フリップチップ接合する工程が、半導体チップに設けて
ある複数の半田バンプの外周に複数のスタッドバンプを
設ける工程と、この複数の半田バンプとスタッドバンプ
との間に切込み溝を設ける工程と、半導体チップの半田
バンプと回路基板の半田バンプとを当接した後に加熱し
て一体化する工程と、フリップチップ接合後に切込み溝
の位置で折ってスタンドバンプを除去する工程とを含む
ことを特徴として半導体チップのフリップチップ接合方
法を構成することにより解決することができる。
【００１６】
【作用】本発明は半導体チップの半田バンプと回路基板
上にパターン形成されている半田バンプとを接合する際
に、半導体チップの外周に必要とする高さのスタッドバ
ンプを設けておき、接合が終わった後に半導体チップの
外周部を折損してスタッドバンプを含めて除去する方法
をとることにより、ウエスト形状をとり一定の高さを保
った半田接合を得るものである。
【００１７】発明者は回路基板上に搭載した半導体チッ
プと回路基板上に設けてあるパッドとの回路接続にワイ
ヤボンダが使用されているのに着目した。そして、ワイ
ヤボンディングした金（Au) 線を半田接合がウエスト形
状をとるに必要な高さに潰してスタッドバンプとし、こ
れを備えて半導体チップのフリップチップ接合を行うも
のである。
【００１８】図１は本発明に係るフリップチップ接合方
法を示す断面図である。まず、LSI などの集積回路が形
成されている半導体チップ６の基板面に半田バンプを形
成するためとスタッドバンプを形成するためのパッド４
を形成する。
【００１９】こゝで、スタッドバンプ形成用のパッド４
は半導体チップ６の四つ角の先端部に一個づつ設けるの
が理想的であるが、周辺部に正三角形となるように設け
てもよい。
【００２０】そして、スタッドバンプ形成用のバンプの
上にワイヤボンダを用いてAu線かアルミニウム(Al)線を
ボンディングし、スタッドバンプ形成に見合った長さ(
約70μm ) に切断してスタッドバンプ９を形成する。
（以上同図Ａ）次に、ダイシングソー（Dicing-saw) を
用いてスタッドバンプ９を含む外周部に切込み溝（ダイ
シングライン）10を設けると共に従来と同様に半田バン
プ５を形成し、またスタッドバンプ９を所定の高さにま
で潰す。（以上同図Ｂ）次に、従来と同様に半導体チッ
プ６を回路基板７の半田バンプ５に位置合わせして当接
する。
【００２１】このとき、スタッドバンプ９と回路基板７
との間には隙間がある。（以上同図Ｃ） 次に、回路基板７を加熱して半田バンプ５同士を融着さ
せると、スタッドバンプ９が存在するためにウエスト形
状をした半田接合11を得ることができる。( 以上同図
Ｄ） 次に、半導体チップ６の切込み10のところで半導体基板
を折ることでスタッドバンプ９を除くことができる。
【００２２】このような工程をとることにより比較的簡
単な方法で精度よくウエスト状をした半田接合11を形成
することができる。以上の工程によりフリップチップ接
合が完成する。
【００２３】なお、半田バンプの大きさは半導体チップ
の容量や定格により一定ではなく大きな場合もあり、か
ゝる場合はスタッドバンプの高さはそれに見合った高さ
にする必要がある。
【００２４】この場合は一回のワイヤボンディングによ
り得られるスタッドバンプの高さは潰した後において約
70μm であるから、スタッドバンプへのワンヤボンディ
ングを繰り返し行った後に治具を用いて必要とする高さ
に押し潰せばよい。
【００２５】
【実施例】実施例１：シリコン（Si) よりなる半導体チ
ップの表面とガラスセラミッスクよりなる回路基板の表
面に直径が80μm で中心間隔が150 μm のパッド４を真
空蒸着技術と写真蝕刻技術（フォトリソグラフィ）を用
いてマトリックス状に多数形成した。
【００２６】また、半導体チップの四隅には同じ直径の
スタッドバンプ用のパット４を形成した。こゝで、真空
蒸着膜は下側からAu/Pt/Tiの三層構造からなり、その厚
さはそれぞれ1000Åである。
【００２７】次に、ダイシングソーを用い、厚さが500
μm の半導体チップの周辺部に350μm の厚さに切込み
溝10を設けた。また、四箇所のスタッドバンプ用のパッ
ドに直径が35μm のAu線をワイヤボンディングし、70μ
m の高さで切断し、これを60μm の高さに潰して表面出
しを行った。
【００２８】また、従来の転写方法を用い、半導体チッ
プと回路基板のパッドの上に高さが40μm の半田バンプ
５を形成した。次に、半導体チップ面と回路基板面の上
にフラックスを塗布して後、両者を位置合わせた状態で
回路基板を加熱して両者を接合し、フラックス洗浄を行
った後に、切込みに沿ってスタッドバンプ９のある周辺
部を折り曲げて除去した。
【００２９】その結果、長さが60μm でウエスト形状の
半田接合を得ることができた。 実施例２：Siよりなる半導体チップの表面とガラスセラ
ミックスよりなる回路基板の表面に直径が200μm で中
心間隔が400 μmのパッド４を真空蒸着技術と写真蝕刻
技術（フォトリソグラフィ）を用いてマトリックス状に
多数形成した。
【００３０】また、半導体チップの四隅には同じ直径の
スタッドバンプ用のパッド４を形成した。こゝで、真空
蒸着膜は下側からAu/Pt/Tiの三層構造からなり、その厚
さはそれぞれ1000Åである。
【００３１】次に、ダイシングソーを用い、厚さが500
μm の半導体チップの周辺部に350μm の厚さに切込み
溝10を設けた。また、四箇所のスタッドバンプ用のパッ
ドに直径が35μm のAu線をワイヤボンディングし、70μ
m の高さで切断する操作を５回連続して行った後、これ
を200μm の高さに潰して表面出しを行った。
【００３２】また、従来の転写方法を用い、半導体チッ
プと回路基板のパッドの上に高さが120μm の半田バン
プ５を形成した。次に、半導体チップ面と回路基板面の
上にフラックスを塗布して後、両者を位置合わせた状態
で回路基板を加熱して両者を接合し、フラックス洗浄を
行った後に、切込みに沿ってスタッドバンプ９のある周
辺部を折り曲げて除去した。
【００３３】その結果、長さが200μm でウエスト形状
の半田接合を得ることができた。
【００３４】
【発明の効果】本発明の実施により比較的簡単な工程で
ウエスト形状の半田接合を得ることができ、これにより
フリップチップ接合をとる半導体装置の信頼性を向上す
ることができる。
【図面の簡単な説明】
【図１】本発明に係るフリップチップ接合方法を示す工
程断面図である。
【図２】従来のフリップチップ接合方法を示す工程断面
図である。
【符号の説明】
４ パッド ５ 半田バンプ ６ 半導体チップ ７ 回路基板 ９ スタッドバンプ 10 切込み溝 11 半田接合
───────────────────────────────────────────────────── フロントページの続き (72)発明者 橋本 薫 神奈川県川崎市中原区上小田中1015番地 富士通株式会社内

Claims (2)

    【特許請求の範囲】
  1. 【請求項１】 半導体チップ面上にマトリックス状に形
    成してある半田バンプを回路基板上にパターン形成して
    ある半田バンプに当接し、フリップチップ接合する工程
    が、 半導体チップに設けてある複数の半田バンプの外周に複
    数のスタッドバンプを設ける工程と、 該複数の半田バンプとスタッドバンプとの間に切込み溝
    を設ける工程と、 半導体チップの半田バンプと回路基板の半田バンプとを
    当接した後に加熱して一体化する工程と、 フリップチップ接合後に切込み溝の位置で折損してスタ
    ッドバンプを除去する工程と、 を含むことを特徴とする半導体チップのフリップチップ
    接合方法。
  2. 【請求項２】 前記複数のスタッドバンプの形成が、パ
    ッドに一回または繰り返しワイヤボンディングを行った
    後、ワイヤ潰しを行って得ることを特徴とする請求項１
    記載の半導体チップのフリップチップ接合方法。
JP3229266A 1991-09-10 1991-09-10 半導体チップのフリップチップ接合方法 Expired - Fee Related JP2555811B2 (ja)

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JP3229266A JP2555811B2 (ja) 1991-09-10 1991-09-10 半導体チップのフリップチップ接合方法
AU22094/92A AU649559B2 (en) 1991-09-10 1992-09-02 Process for flip chip connecting semiconductor chip
US07/939,695 US5284796A (en) 1991-09-10 1992-09-02 Process for flip chip connecting a semiconductor chip
CA002077406A CA2077406C (en) 1991-09-10 1992-09-02 Process for flip chip connecting semiconductor chip
KR92016258A KR970001928B1 (en) 1991-09-10 1992-09-07 Process for flip-chip connection of a semiconductor chip
DE69211456T DE69211456T2 (de) 1991-09-10 1992-09-09 Flip-Chip-Verfahren zur Verbindung eines Halbleiterchips
EP92308188A EP0532297B1 (en) 1991-09-10 1992-09-09 Process for flip-chip connection of a semiconductor chip

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CA2077406C (en) 1997-12-09
JP2555811B2 (ja) 1996-11-20
DE69211456D1 (de) 1996-07-18
AU2209492A (en) 1993-04-22
EP0532297B1 (en) 1996-06-12
DE69211456T2 (de) 1996-11-07
EP0532297A1 (en) 1993-03-17
US5284796A (en) 1994-02-08
KR970001928B1 (en) 1997-02-19
AU649559B2 (en) 1994-05-26

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