JP2007053130A - 接合構造および接合方法 - Google Patents
接合構造および接合方法 Download PDFInfo
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- JP2007053130A JP2007053130A JP2005235261A JP2005235261A JP2007053130A JP 2007053130 A JP2007053130 A JP 2007053130A JP 2005235261 A JP2005235261 A JP 2005235261A JP 2005235261 A JP2005235261 A JP 2005235261A JP 2007053130 A JP2007053130 A JP 2007053130A
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Abstract
【解決手段】Alワイヤ20をウェッジツールによってSi電極40に押し付け超音波を印加して接合させる。これにより、接合部30にはAl/Al酸化物/Si酸化物/Siの順番で物質が積み重なって強固な接合構造となる。
【選択図】 図1
Description
実施形態1は、半導体装置が形成されたSi基板の表面に形成されているSi電極にAlワイヤをウエッジボンディングにより接合させる接合方法と、接合構造とに関するものである。
実施形態2では、半導体回路が形成されたSi基板(半導体チップ)のSi電極にAlバンプを接合させて、このAlバンプを介してパッケージ基板に半導体チップを搭載してチップサイズパッケージ(CSP)を作製している。
上記の実施形態は本発明の例示であって本発明はこれらの例に限定されない。AlとSiとの接合であれば、接合されるものはAlワイヤやAlバンプ、あるいはSi電極に限定されない。また、AlワイヤはSiを含有していてもしていなくてもどちらでもよい。AlバンプもSiを含有していてもいなくてもどちらでも構わない。Si基板上のAlバンプはシングルポイントボンディングのように1つ1つ接合する方法であってもよいし、全て一度に接合してもよい。本技術を適用するデバイスは、半導体集積回路、MEMSデバイスのみでなく、イメージセンサーやレーザー素子のような光学デバイスでも良い。また、Si基板のみではなく、SiGe(シリコンゲルマニュウム)基板やSiGeC(シリコンゲルマニュウムカーボン)基板、GaAs(ガリウムヒ素)基板などの電極接合に用いても構わない。
12 自然酸化膜
14 Si酸化物からなる層
20 Alワイヤ
24 Al酸化膜からなる層
30 接合部
31 境界部
40 Si電極
50 ウェッジツール
60 Alバンプ
70 パッケージ基板
71 基板側電極
72 アンダーフィル
73 内部配線
74 はんだボール
Claims (14)
- AlとSiとの接合構造であって、
AlとSiの間には、Al酸化物からなる層とSi酸化物からなる層とが存しており、前記Al/前記Al酸化物からなる層/前記Si酸化物からなる層/前記Siという順番で積み重なっている、接合構造。 - 前記Al酸化物からなる層と前記Si酸化物からなる層はそれぞれ略均一の厚みで広がっている、請求項1に記載の接合構造。
- 前記Al酸化物からなる層と前記Si酸化物からなる層とを合わせた厚みが0.1nm以上10nm以下である、請求項1または2に記載の接合構造。
- 前記Siの前記Alと接合していない部分の表面に存する自然酸化膜の厚みが、前記Si酸化物からなる層の厚みよりも大きい、請求項1から3のいずれか一つに記載の接合構造。
- 前記Alのうち、少なくとも前記Al酸化物からなる層に接している部分にはSiが含まれている、請求項1から4のいずれか一つに記載の接合構造。
- 前記Siのうち前記Si酸化物からなる層に接している部分にはAlが含まれている、請求項1から5のいずれか一つに記載の接合構造。
- Siを含むAlワイヤとSi電極との接合構造であって、
前記Alワイヤと前記Si電極との接合部では、当該Alワイヤが押しつぶされて変形されており、
前記Alワイヤの変形されている部分のSi含有率は、変形されていない部分のSi含有率よりも大きい、接合構造。 - 前記Alワイヤと前記Si電極との接合部には、Al酸化物からなる層とSi酸化物からなる層とが互いに接して存しており、
前記Alワイヤと前記Al酸化物からなる層とは接しており、前記Si電極と前記Si酸化物からなる層とは接している、請求項7に記載の接合構造。 - 前記Al酸化物からなる層と前記Si酸化物からなる層とを合わせた厚みが0.1nm以上10nm以下である、請求項8に記載の接合構造。
- 前記Alワイヤが押しつぶされて変形されている部分のワイヤ幅は、変形していない部分のワイヤ径の1.5倍以上である、請求項7から9のいずれか一つに記載の接合構造。
- 前記Alワイヤが押しつぶされて変形されている部分のワイヤは、前記電極部の外側にも存している、請求項7から10のいずれか一つに記載の接合構造。
- AlとSiとの接合方法であって、
Alからなる部材とSiからなる部材とを接触させる工程と、
酸素雰囲気下において、圧着振動部材によって前記Alからなる部材を前記Siからなる部材に押し付け、且つ該圧着振動部材によって前記Alからなる部材に超音波を印加するボンディング工程と
を含み、
前記ボンディング工程では、前記Alからなる部材と前記Siからなる部材との間にAl酸化物からなる層とSi酸化物からなる層とを形成する、接合方法。 - 前記ボンディング工程では、前記Siからなる部材の表面に存するSiの自然酸化膜を除去して前記Al酸化物からなる層と前記Si酸化物からなる層とを形成する、請求項12に記載の接合方法。
- 前記ボンディング工程において、前記圧着振動部材は前記Alからなる部材を前記Siからなる部材に対して0.14N以上0.4N以下の力によって押し付けて、30ms以上50ms以下の間超音波を印加する、請求項12または13に記載の接合方法。
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US11/491,029 US7629688B2 (en) | 2005-08-15 | 2006-07-24 | Bonded structure and bonding method |
CN2006101084813A CN1917197B (zh) | 2005-08-15 | 2006-08-04 | 接合结构和接合方法 |
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US8800846B2 (en) * | 2012-01-27 | 2014-08-12 | Apple Inc. | Ultrasonic bonding |
WO2015170738A1 (ja) * | 2014-05-08 | 2015-11-12 | ローム株式会社 | ワイヤボンディング構造の製造方法、ワイヤボンディング構造、電子装置 |
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JPH08153758A (ja) * | 1994-11-28 | 1996-06-11 | Nec Corp | 超音波ワイヤボンディング装置及び方法 |
JPH1074625A (ja) * | 1996-08-30 | 1998-03-17 | Ikeda Takeshi | インダクタ素子 |
JPH1174299A (ja) * | 1997-08-28 | 1999-03-16 | Sony Corp | バンプ形成装置およびバンプ形成方法 |
JPH11135534A (ja) * | 1997-10-31 | 1999-05-21 | Hitachi Ltd | 半導体装置 |
JP2005045414A (ja) * | 2003-07-24 | 2005-02-17 | Seiko Epson Corp | 弾性表面波デバイス |
WO2006025210A1 (ja) * | 2004-08-31 | 2006-03-09 | Matsushita Electric Industrial Co., Ltd. | マイクロマシンデバイス |
Cited By (1)
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JP2007220822A (ja) * | 2006-02-15 | 2007-08-30 | Matsushita Electric Ind Co Ltd | 接続構造体および接続構造体の製造方法 |
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US7629688B2 (en) | 2009-12-08 |
US8012869B2 (en) | 2011-09-06 |
US20100048017A1 (en) | 2010-02-25 |
US20070035035A1 (en) | 2007-02-15 |
CN1917197B (zh) | 2010-05-12 |
CN1917197A (zh) | 2007-02-21 |
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