CN1917197A - 接合结构和接合方法 - Google Patents

接合结构和接合方法 Download PDF

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Publication number
CN1917197A
CN1917197A CNA2006101084813A CN200610108481A CN1917197A CN 1917197 A CN1917197 A CN 1917197A CN A2006101084813 A CNA2006101084813 A CN A2006101084813A CN 200610108481 A CN200610108481 A CN 200610108481A CN 1917197 A CN1917197 A CN 1917197A
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mentioned
layer
silicon
aluminium
oxide
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CN1917197B (zh
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南尾匡纪
藤本博昭
水谷笃人
藤谷尚树
福田敏行
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Abstract

本发明是关于接合结构和接合方法的发明。本发明的目的在于提供一种成本低而又能使硅和铝的稳固接合成为可能的接合结构和接合方法。通过楔形挤压具(wedge tool)的使用，使铝导线向硅电极压紧，并施加超声波，从而使两者接合在一起。由此，在接合部，物质按照铝、铝氧化物、硅氧化物、硅的顺序重叠在一起，从而形成稳固的接合结构。

Description

接合结构和接合方法
参照的相关申请
2005年8月15日已提交的日本国专利申请2005-235261的说明书、附图、权利要求书中所揭示的事项作为参照在这里均加以引用。
技术领域
本发明涉及一种接合结构和接合方法，特别是关于铝和硅的接合结构和接合方法。
背景技术
近年来作为制作微小而精密装置的技术，微电子机械系统(MEMS＝Micro-Electro-Mechanics-Systems)技术受到注目，而且对其的研究十分盛行。微电子机械系统技术如日本国专利公开2005-193336号公报中所示，其占据主流位置的技术融合了半导体加工、机械加工、电子电路等多种技术，此主流技术的主要特点在于通过蚀刻硅晶片将装置的结构作入其中。
因为如果按照这样在硅晶片中作入装置的结构，对此装置进行驱动、控制等的电子电路也能在同一硅晶片上形成为一体，所以在实现装置的小型化等方面也占据优势，例如运用于手机的麦克风等(参照日本国专利公开2002-27595号公报)。
(发明所要解决的课题)
然而，在微电子机械系统技术中，为了通过蚀刻的方法把装置结构作入硅晶片中，不仅是硅，连作为半导体装置导线的铝和铜等也都被除去，在装置结构做好时，装置的电极部由硅或者二氧化硅占据。为了从外部向此装置导电及输入、输出电子信号，有必要使其和外部电路用某种方法进行连接，而为了使用金属线这一最为简单可靠的连接手段进行导线结合，则需要在装置的电极部位用电镀等方法形成金或铝等的金属层。形成这样的金属层则存在着成本大幅度上升，装置的价格大幅度增高的问题。
发明内容
鉴于对上述问题的考虑，本发明的目的在于提供一种成本低而又能使硅和铝的稳固接合成为可能的接合结构和接合方法。
(解决课题的方法)
为了解决上述课题，本发明的第一种接合结构是铝和硅的接合结构，在铝和硅之间存在着铝氧化物形成的层和硅氧化物形成的层，并且其构成是按照铝、铝氧化物形成的层、硅氧化物形成的层、硅的顺序重叠的。
上述铝氧化物形成的层和上述硅氧化物形成的层最好分别都以大致均匀的厚度扩展。
上述铝氧化物形成的层和上述硅氧化物形成的层的厚度总和最好在0.1纳米以上10纳米以下。
上述硅中不和上述铝接合的部分的表面存在的自然氧化膜的厚度最好比上述硅氧化物形成的层的厚度还要厚。
在上述铝中，至少是和上述铝氧化物形成的层连接的部分是含有硅的。
在上述硅中在和上述硅氧化物形成的层连接的部分是含有铝的。
本发明的第二种接合结构是含有硅的铝导线和硅电极的接合结构，在上述铝导线和上述硅电极的接合部，该铝导线因被挤压而变形，上述铝导线变形部分的硅含量比未发生变形部分的硅含量还要高。
在一个理想的实施例中，上述铝导线和上述硅电极的接合部上，相互毗连存在着铝氧化物形成的层和硅氧化物形成的层，上述铝导线和上述铝氧化物形成的层相连接，而上述硅电极和上述硅氧化物形成的层相连接。
上述铝氧化物形成的层和上述硅氧化物形成的层的厚度总和最好在0.1纳米以上10纳米以下。
上述铝导线被挤压变形部分的导线宽度最好是未发生变形部分的导线直径的1.5倍以上。
上述铝导线被挤压变形部分的导线最好也存在于上述电极部的外侧。
本发明的接合方法是铝和硅的接合方法，此方法包括使铝构成的部件和硅构成的部件相接触的工序，及在含氧环境下通过压振部件使上述铝构成的部件向上述硅构成的部件压紧，并且通过该压振部件对上述铝构成的部件施加超声波的结合工序，在上述结合工序中，上述铝构成的部件和上述硅构成的部件中间形成铝氧化物形成的层和硅氧化物形成的层。
一个理想的实施例，在上述结合工序中，除去存在于上述硅构成的部件表面的硅的自然氧化膜后，形成上述铝氧化物形成的层和上述硅氧化物形成的层。
一个理想的实施例，在上述结合工序中，上述压振部件施加一个0.14牛顿以上0.4牛顿以下的力，使上述铝构成的部件压紧到上述硅构成的部件，并施加时间为30毫秒以上50毫秒以下的超声波。
附图说明
图1是关于实施例1铝导线和硅电极接合部分的剖面图。
图2是使铝导线和硅电极接触后的剖面图。
图3是通过楔形挤压具(wedge tool)使铝导线和硅电极相接合的剖面图。
图4是图1的俯视图。
图5(a)是图1的A-A线处的剖面图，图5(b)是图1的B-B线处的剖面图。
图6是关于实施例2芯片级密封件制造工序的剖面图。
(符号说明)
10                 硅衬底
12                 自然氧化膜
14                 硅氧化物形成的层
20                 铝导线
24                 铝氧化物形成的层
30                 接合部
31                 交界部
40                 硅电极
50                 楔形挤压具(wedge tool)
60                 铝垫片
70                 密封衬底
71                 衬底侧电极
72                 充填体
73                 内部布线
74                 焊锡点
具体实施方式
以下根据附图对本发明的实施例进行详细地说明。在下记附图中，为了便于说明，将实质上具有相同功能的结构要素用同一个参照符号表示。
(第一实施例)
第一实施例是关于通过楔形物结合的方法使铝导线与装有半导体装置的硅衬底表面形成的硅电极相接合的接合方法和接合结构。
在本实施例中，如图1所示，使铝导线20接合在硅衬底10所形成的硅电极40上。硅电极40中使用导电性能良好的多结晶硅。铝导线20中含有1％的硅，成为一种合金。这样做的目的是为了提高铝导线弯曲强度等的机械性能和增强其接合性能。接合部30是受后述的楔形挤压具(wedgetool)的挤压而产生的变形。在此接合部30中，铝导线20和硅电极40，从机械性能来讲，稳固地连接在一起，即使振动硅衬底10或略微拉伸铝导线20也不会使铝导线20从硅电极40上分离开来。
图5(a)是图1的A-A线处剖面的放大图，图5(b)是图1的B-B线处剖面的放大图。从图5(a)可以看出，在接合部30中，铝导线20和硅衬底10(硅电极40)之间存在着铝氧化物形成的层24和硅氧化物形成的层14。用元素符号表示的话，铝氧化物形成的层24是由Al2O3(三氧化二铝)等构成的，硅氧化物形成的层14是由SiO2(二氧化硅)等构成的。这些层14、24重叠的顺序是铝导线20、铝氧化物形成的层24、硅氧化物形成的层14、硅衬底10，铝氧化物形成的层24是和硅氧化物形成的层14和铝导线20相连接的，而硅氧化物形成的层14又和硅衬底10连接。
铝氧化物形成的层24和硅氧化物形成的层14，除了接合部30的外沿部分以外，都以大致均匀的厚度扩展于整个接合部30上。在本实施例中，铝氧化物形成的层24的厚度T2和硅氧化物形成的层14的厚度T1分别约为0.4纳米和0.6纳米，此两者的厚度和约为1纳米。另一方面，硅衬底10中没有和铝导线20接合的部分，如图5(b)所示在其表面存在着硅的自然氧化膜12，此氧化膜的厚度T3约为1纳米，比硅氧化物形成的层14的厚度T1还要厚。这是因为在硅的自然氧化膜12上，一边外加超声波和荷载，一边压紧铝导线20时，硅的自然氧化膜12一旦被破坏，就会出现纯硅面，进而在接合界面上形成硅氧化物形成的层14的缘故。
因为在铝导线20和硅电极40的接合部30存在着上述所示的两个厚度很薄的由氧化物形成的层14、24，所以铝导线20和硅电极40之间能够机械性的稳固连接在一起的同时，也可以导电。也就是说，通过铝氧化物形成的层24和硅氧化物形成的层14的传导，铝导线20和硅电极40之间是通电的。这是两个由氧化物形成的层14、24的厚度很薄的缘故。特别是由于比起硅的自然氧化膜12的厚度T3，硅氧化物形成的层14的厚度T1很薄的缘故而形成的。铝氧化物形成的层24的厚度T2和硅氧化物形成的层14的厚度T1的厚度总和T1+T2最好为0.1纳米以上10纳米以下。不满0.1纳米的话，机械性的连接强度不足，铝导线20和硅电极40容易因为振动等很小的力而分开。最好也不要大于10纳米，一旦比10纳米大的话，就会造成电阻变大而导电困难的现象。
下面对于铝导线20和硅电极40的接合方法进行说明。
首先如图2所示，在大气状态下，使铝导线20接近并与硅电极40相接触。
其次如图3所示，利用楔形挤压具(wedge tool)50使铝导线20向硅电极40压紧，并向铝导线20施加超声波。这样一来，由于超声波振动而产生的摩擦，会使铝导线20和硅电极40接合面的氧化物被除去，同时因为这种摩擦接合面发热，从而使铝导线20的抗张力剧减并产生塑性变形，进而使得铝导线20和硅电极40在固相状态下接合在一起。因为在含氧的大气状态下进行接合，所以接合部会产生氧化物。图3中虚线所表示的是塑性变形前铝导线20的上部形状。
这时的结合条件最好为用一个0.14牛顿以上0.4牛顿以下的力作用在楔形挤压具(wedge tool)50上，而超声波的施加最好在超声波频率为60千赫以上140千赫以下，施加的时间为30毫秒以上50毫秒以下。最好不要发生如下的情况，即施加的重力不满0.14牛顿的话，则不能牢固的接合，而比0.4牛顿还要大的话，将会使硅电极40产生环状凸起(即穿孔到硅电极40的下一层)；而超声波频率未满60千赫的话，就会产生接合不良，而比140千赫还要大的话，将会使硅电极40产生环状凸起。并且超声波的施加时间未满30毫秒的话，会产生接合不良，而比50毫秒还要大的话，则会使接合部的形状变形的问题也是最好避免的。
图4是图1的俯视图。在接合部30处因受挤压而变形的铝导线20的宽度W大约是铝导线20未发生变形部分宽度的2.4倍。而且，铝导线20中受挤压而变形部分的长度(即变形部分与未变形部分的两个交界线31、31之间的距离)L，超过了电极的长度，所以变形部分的铝导线20也存在于硅电极40的外侧。因为铝导线20受挤压变形的部位是这样扩展开来的，因此铝导线20和硅电极40在接合部30处能够可靠而牢固的接合在一起。在这里，铝导线20的变形部分的宽度与未变形部分的宽度比不满1.5倍时，会产生接合强度不足的现象，所以其宽度比最好在1.5倍以上。
使铝导线20和硅电极40像这样接合在一起，因为接合而使硅从硅电极40向外扩散，从而使铝导线20中位于接合部30处的被挤压部分(以下称接合部铝导线)中硅含量比铝导线20中接合部30以外部分的含量还要高。在接合部铝导线处，离硅电极40近的部分的硅含量比离其远的部分还要高。
此外，在硅电极40一侧，硅氧化物形成的层14的下部也因为接合而含有铝。
如上述说明所示，因为在铝导线20和硅电极40的接合处，是按照铝、铝氧化物、硅氧化物、硅的顺序重叠而成的，所以铝和硅可以牢固的接合在一起，也能够实现导电。并且，因为是通过楔形挤压具(wedge tool)50使铝导线20向硅电极40压紧，并施加超声波进行接合的，所以不仅能够简单而迅速地完成接合，而且也可实现接合的低成本化。
(第二实施例)
在实施例2中，使铝垫片与已形成半导体电路的硅衬底(半导体芯片)的硅电极接合，凭借此铝垫片使半导体芯片搭载在密封衬底上，从而制作出芯片级密封件(CSP)。
关于本实施例的芯片级密封件的制作过程如图6所示。
首先，如图6(a)所示，向已形成半导体电路的硅衬底(半导体芯片)10的硅电极40搭载上铝垫片60。铝垫片60的大小基本上可将硅电极40整个覆盖住。而且，硅衬底10上有多个硅电极40，在所有的硅电极40上都要搭载铝垫片60。
其次，如图6(b)所示，利用楔形挤压具(wedge tool)(无图示)使铝垫片60向硅电极40压紧，并外加超声波和荷载，从而使两者接合。这时的接合条件与实施例1的条件相同。此外，在本实施例中，一个硅衬底10上所搭载的全部的铝垫片60都应分别和每一个硅电极40对应接合在一起。通过这样的接合，铝垫片60和硅电极40之间也分布着和实施例1同样的铝氧化物形成的层和硅氧化物形成的层，因此，铝垫片60和硅电极40之间既可实现机械、导电性能的可靠而牢固的连接，又可以实现低成本化。关于铝氧化物形成的层和硅氧化物形成的层的厚度也与实施例1相同。
再着，如图6(c)所示，硅衬底10与密封衬底70是相对地设置在一起的。这时，硅衬底10上的铝垫片60和密封衬底70衬底侧电极71的位置也是对应地设置在一起的。与密封衬底70的衬底侧电极71一面相反的另一面上存在着焊锡点74，密封衬底70内部形成的内部布线使衬底侧电极71和焊锡点74之间能够导电。
此外，如图6(d)所示，使硅衬底10的铝垫片60和密封衬底70的衬底侧电极71相接触并连接在一起，且在硅衬底10和密封衬底70之间灌入充填体72并使其凝固，从而实现对连接部分的保护。这样一来，芯片级密封件就做好了。此外，还可以广泛地应用树脂进行封装。在本实施例中的树脂封装是所谓的“后灌入法”，而也可以使用先将封装树脂涂抹好后，再使硅衬底10的铝垫片60和密封衬底70的衬底侧电极71接触并连接的“先灌入法”。
在本实施例中，通过简单而省时的工序，就可以使铝垫片60和硅衬底10的硅电极40接合在一起。根据这种接合，铝垫片60和硅电极40之间既可实现机械上导电上的可靠而牢固的连接，又可以保证低成本化。
(其他的实施例)
上述的实施例只是关于本发明所提出的示例，而本发明并不只局限于这些示例。在铝和硅接合时，能够进行接合的也并不仅仅限定在铝导线、铝垫片或者硅电极之中。而且，铝导线中可以含有硅，也可以不含硅。而铝垫片中也同样可以含有硅或者不含硅。硅衬底上的铝垫片可以使用像单一点接合那样逐一地进行接合的方法，也可以全部一次性接合在一起。可应用本技术的装置并不只局限于半导体集成电路、微电子机械系统装置，诸如图像传感器、激光器元件那样的光学装置也能够应用。而且，不仅是硅衬底，也可应用于硅锗衬底、硅锗碳衬底、镓砷衬底等的电极接合上。
(实用性)
如上述说明所示，本发明是在铝和硅之间，产生了铝氧化物形成的层和硅氧化物形成的层，并且是按照铝、铝氧化物、硅氧化物、硅的顺序重叠而成的，所以铝和硅之间可形成稳固的接合。这种接合方法还能够实现接合的简单化和低成本化。

Claims (14)

1.一种接合结构，是铝和硅的接合结构，其特征在于：
在铝和硅之间存在着铝氧化物形成的层和硅氧化物形成的层，并且按照上述铝、上述铝氧化物形成的层、上述硅氧化物形成的层、上述硅的顺序重叠。
2.根据权利要求1所述的接合结构，其特征在于：
上述铝氧化物形成的层和上述硅氧化物形成的层都分别是以大致均匀的厚度扩展的。
3.根据权利要求1所述的接合结构，其特征在于：
上述铝氧化物形成的层和上述硅氧化物形成的层的厚度总和在0.1纳米以上10纳米以下。
4.根据权利要求1所述的接合结构，其特征在于：
上述硅中不和上述铝接合的部分的表面存在的自然氧化膜的厚度比上述硅氧化物形成的层的厚度还要厚。
5.根据权利要求1所述的接合结构，其特征在于：
在上述铝中，至少是和上述铝氧化物形成的层连接的部分是含有硅的。
6.根据权利要求1所述的接合结构，其特征在于：
在上述硅中和上述硅氧化物形成的层连接的部分是含有铝的。
7.一种接合结构，是含有硅的铝导线和硅电极的接合结构，其特征在于：
在上述铝导线和上述硅电极的接合部，该铝导线因被挤压而变形，
上述铝导线变形部分的硅含量比未发生变形部分的硅含量还要高。
8.根据权利要求7所述的接合结构，其特征在于：
在上述铝导线和上述硅电极的接合部上，相互毗连存在着铝氧化物形成的层和硅氧化物形成的层，
上述铝导线和上述铝氧化物形成的层相连接，而上述硅电极和上述硅氧化物形成的层相连接。
9.根据权利要求8所述的接合结构，其特征在于：
上述铝氧化物形成的层和上述硅氧化物形成的层的厚度总和在0.1纳米以上10纳米以下。
10.根据权利要求7所述的接合结构，其特征在于：
上述铝导线被挤压变形部分的导线宽度是未发生变形部分的导线直径的1.5倍以上。
11.根据权利要求7所述的接合结构，其特征在于：
上述铝导线被挤压变形部分的导线也存在于上述电极部的外侧。
12.一种接合方法，是铝和硅的接合方法，其特征在于：
包括：
使铝构成的部件和硅构成的部件相接触的工序，以及
在含氧环境下，通过压振部件使上述铝构成的部件向上述硅构成的部件压紧，并且通过该压振部件对上述铝构成的部件施加超声波的结合工序，另外
在上述结合工序中，上述铝构成的部件和上述硅构成的部件中间形成铝氧化物形成的层和硅氧化物形成的层。
13.根据权利要求12所述的接合方法，其特征在于：
在上述结合工序中，除去存在于上述硅构成的部件表面的硅的自然氧化膜后，形成上述铝氧化物形成的层和上述硅氧化物形成的层。
14.根据权利要求12所述的接合方法，其特征在于：
在上述结合工序中，上述压振部件施加一个0.14牛顿以上0.4牛顿以下的力，使上述铝构成的部件压紧到上述硅构成的部件，并施加时间为30毫秒以上50毫秒以下的超声波。
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