JPS61231736A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

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Publication number
JPS61231736A
JPS61231736A JP60073035A JP7303585A JPS61231736A JP S61231736 A JPS61231736 A JP S61231736A JP 60073035 A JP60073035 A JP 60073035A JP 7303585 A JP7303585 A JP 7303585A JP S61231736 A JPS61231736 A JP S61231736A
Authority
JP
Japan
Prior art keywords
lead
bonding
pressing
wire
pressing bar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60073035A
Other languages
English (en)
Inventor
Kazumichi Machida
一道 町田
Saneyasu Hirota
弘田　実保
Yoko Shibuya
渋谷　洋子
Masaaki Shimotomai
下斗米　将昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
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Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60073035A priority Critical patent/JPS61231736A/ja
Publication of JPS61231736A publication Critical patent/JPS61231736A/ja
Pending legal-status Critical Current

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    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、半導体装置の製造方法に関し、特にＩＣや
トランジスタなどの製造工程において、半導体チップ上
の電極とリード端子とを金属細線を用いて接続するワイ
ヤボンディング方法に関するものである。
〔従来の技術〕
第３図は従来のワイヤボンディング方法を模式的に示し
たものである。図において、１は金ワイヤ、２は半導体
チップ、３は半導体チップ２上に形成されたアルミ電極
、４は銀めっき等の表面処理が施された銅合金リード、
５はボンディングツールであるキャピラリチップである
。
従来のワイヤボンディング方法では、金ワイヤ１の先端
をアーク入熱で熔融凝固させて球状部１ａを形成し、こ
の球状部１ａをアルミ電極３に接合した後（第３図（ａ
）　（ｂ）参照）、金ワイヤ１の他端側をリード４に接
合するようにしており（第３図（Ｃ）　（ｄ）参照）、
又ワイヤ１の接合には主に超音波併用熱圧着方式が用い
られている。
〔発明が解決しようとする問題点〕
以上のように従来は、ワイヤ材料として金が用いられ、
又リード４の表面には銀めっき等の表面処理が施されて
いたが、材料原価低減及び素子の長期信頼性向上という
観点から、ワイヤの材料を金から銅、アルミニウム等の
他の材料に代えるとともに、銅合金リード４表面の銀め
っき層を省略し、リード４上に直接金属ワイヤを接合す
ることが考えられる。
また超音波併用熱圧着ボンディングにおいて、良好な接
合状態を得るためには、材料表面の酸化皮膜等の吸着物
を十分に破壊、除去すること、及び接合界面における材
料の塑性変形により、酸化膜破壊後の新生面同志の接触
面積を拡大することが極めて重要である。
しかるに上述のように銀めっき層を省略し、リードに直
接ボンディングを行なう場合、上記の２点、即ち酸化膜
の除去及び接合界面での塑性変形の双方において、従来
の銀めっきリードに比し、満足し得るような結果を得る
ことが著しく困難となる。そのためリードへのボンディ
ング時に接合不良、即ち接合強度不足、極端な場合はボ
ンディング時のはがれなどが発生することとなる。
この発明は上記のような問題点に鑑みてなされたもので
、金属ワイヤとリードとの接合性を向上できる半導体装
置の製造方法を提供することを目的としている。
ｃ問題点を解決するための手段〕 この発明に係る半導体装置の製造方法は、ワイヤボンデ
ィング工程以前に、先端に平面状又は球状押圧面を有す
る押圧体をリードのボンディングエリアに押圧しこれに
超音波振動を印加するようにしたものである。
〔作用〕
この発明においては、押圧体をリードのボンディングエ
リアに押圧し、これに超音波振動を印加するようにした
ことから、リードのボンディングエリアの酸化膜等の吸
着物が超音波振動の作用によって十分に破壊、除去され
、この清浄化されたボンディングエリアに金属ワイヤが
接合されるものである。
〔実施例〕
以下、本発明の実施例を図について説明する。
第１図及び第２図は本発明の一実施例による半導体装置
の製造方法を模式的に示したものである。
図において、第３図と同一符号は同図と同一のものを示
し、６は表面の銀めっきが省略された銅合金リード、７
は金属ワイヤ、８は先端に平面状押圧面８ａを有する押
圧棒（押圧体）である。
本実施例の方法では、ワイヤボンディング工程前におい
て、押圧棒８の平面状押圧面８ａをＩＪ−ドロのボンデ
ィングエリアに押圧し、その状態にてこの押圧棒８に１
５　Ｋ　Ｈｚ〜１００　Ｋ　Ｈｚの超音波振動を印加す
る（第１図（ａ）参照）。するとこの押圧棒８に印加さ
れた超音波振動の作用によってリード６表面の酸化膜は
破壊され、この破壊された酸化Ｈ６ａは押圧面７ａの外
周側、即ちリード６のボンディングエリア外側に向けて
押し出され、こうしてリード６のボンディングエリアは
清浄化されるので、その後は押圧棒７への超音波印加を
停止し、これを上方に移動させた後（第１図中）参照）
、第３図に示す従来の方法と同様にして金運ワイヤ７の
ワイヤボンディングを行なう　（第２図参照）。
°　　　以上のような本実施例の方法では、ワイヤボン
ディング工程以前にリード表面の酸化膜を機械的に破壊
除去するようにしたので、ボンディング時のリード及び
ワイヤの新生面同志を確実に接触させることができ、接
合性を大幅に向上でき、金。
銀等の貴金属材料の使用量を大幅に削減できる。
ところでリード表面の酸化膜を破壊除去する方法として
は、ワイヤボンディング工程中に、超音波撮動を印加す
るか、あるいは例えば超音波併用熱圧着ボンディングで
はその超音波出力を増大させることが考えられるが、こ
の方法ではリードに作用する超音波出力が大きくなると
、リードフレームに搭載した半導体チップが悪影響を受
けるおそれがあり、そのため大きな超音波出力を印加で
きず、完全に酸化膜を破壊除去するのが困難である。こ
れに対し、本方法ではワイヤボンディング工程以前に超
音波撮動を印加するようにしているので、半導体チップ
が悪影響を受けることがなく、その結果超音波出力を十
分に増大させて酸化膜を完全に破壊除去することが可能
である。
なお、上記実施例では先端に平面状押圧面を有する押圧
棒を用いるようにしたが、これは先端に球面状押圧面を
有するものであってもよい。またリードは銅合金リード
ではな（、鉄系リードであってもよい。
〔発明の効果〕
以上のように、本発明に係る半導体装置の製造方法によ
れば、ワイヤボンディング工程以前に、押圧体をリード
のボンディングエリアに押圧し、これに超音波振動を印
加するようにしたので、リードのボンディングエリアを
清浄化してリードとワイヤの接合性を大幅に向上でき、
その結果貴金属材料の使用量を大幅に削減できる効果が
ある。
【図面の簡単な説明】
第１図（ａ）　（ｂ）は各々本発明の一実施例による半
導体装置の製造方法における主要工程を示す模式図、第
２図は上記方法におけるボンディング工程を示す模式図
、第３図（ａｌ〜（ｄ）は各々従来の方法における各工
程を示す模式図である。 ２・・・半導体チップ、３・・・電極、６・・・銅合金
リード、７・・・金属ワイヤ、８・・・押圧棒（押圧体
）。 なお図中同一符号は同−又は相当部分を示す。

Claims (1)

    【特許請求の範囲】
  1. （１）半導体チップ上の電極とリードとを金属細線を用
    いて結線する半導体装置の製造方法において、ワイヤボ
    ンディング工程以前に、先端に平面状又は球面状の押圧
    面を有する押圧体によりリードのボンディングエリアを
    押圧し、この状態でこの押圧体に超音波振動を印加する
    ことを特徴とする半導体装置の製造方法。
JP60073035A 1985-04-05 1985-04-05 半導体装置の製造方法 Pending JPS61231736A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60073035A JPS61231736A (ja) 1985-04-05 1985-04-05 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60073035A JPS61231736A (ja) 1985-04-05 1985-04-05 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
JPS61231736A true JPS61231736A (ja) 1986-10-16

Family

ID=13506690

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60073035A Pending JPS61231736A (ja) 1985-04-05 1985-04-05 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61231736A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01103845A (ja) * 1987-10-16 1989-04-20 Nec Corp ベアーボンディングの組立方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01103845A (ja) * 1987-10-16 1989-04-20 Nec Corp ベアーボンディングの組立方法

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