JPS62136843A - ワイヤボンデイング方法 - Google Patents

ワイヤボンデイング方法

Info

Publication number
JPS62136843A
JPS62136843A JP60278645A JP27864585A JPS62136843A JP S62136843 A JPS62136843 A JP S62136843A JP 60278645 A JP60278645 A JP 60278645A JP 27864585 A JP27864585 A JP 27864585A JP S62136843 A JPS62136843 A JP S62136843A
Authority
JP
Japan
Prior art keywords
ball
wire
electrode
bonding
aluminum electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60278645A
Other languages
English (en)
Inventor
Saneyasu Hirota
弘田　実保
Kazumichi Machida
一道 町田
Toshiharu Sugimura
杉村　敏治
Masaaki Shimotomai
下斗米　将昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60278645A priority Critical patent/JPS62136843A/ja
Publication of JPS62136843A publication Critical patent/JPS62136843A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4807—Shape of bonding interfaces, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4845—Details of ball bonds
    • H01L2224/48451—Shape
    • H01L2224/48453—Shape of the interface with the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48624—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、ＩＣやトランジスタなどの製造工程におい
て、金属ワイヤを接続するワイヤボンディング方法に関
し、特にポールボンディング方法に関するものである。
〔従来の技術〕
第４図は従来のワイヤボンディング方法を模式的に示し
たものである。図において、１は金ワイヤ、２は半導体
チップ、３は半導体チップ２上に形成されたアルミ電極
、４は銀めっき等の表面処理が施された銅合金リード、
５はボンディングツールであるキャピラリチップである
。
従来のワイヤボンディング方法では、金ワイヤ１の先端
をアーク入熱で溶融させ、これを凝固さセｉ’　ホー　
ル部１　ａを形成し、このボール部１ａｔ−アルミ電極
３にボールボンディングした後（第４図（ａ）、　Ｃｂ
）参照）、金ワイヤ１の他端側をリード４にステッチボ
ンディングするようにしており（第４図（Ｃ）、　（ｄ
）参照）、又ワイヤ１の接合には主として超音波併用熱
圧着方式が用いられている。
以上のように従来のこの種の半導体装置においては、ボ
ンディング用金属ワイヤとして金ワイヤが使用されてい
るが、この場合コストが高くつくことと、半導体チップ
２上のアルミ電極３との接合部の長期信頼性が低いとい
う欠点があるため、金に代わる材料及びそのボンディン
グ技術が種々検討されている。
〔発明が解決しようとする問題点〕
ここで材料原価低減及び素子の長期信頼性向上という観
点から、金属ワイヤを金から銅に代える場合について考
える。金属ワイヤを電極にボンディングする場合、良好
な接合状態を得るためには金属ワイヤの硬さと電極の硬
さとが近似しているのが望ましい。従来の金ワイヤを用
いる場合には半導体チップのアルミ電極の硬さはビッカ
ース硬さでＨｖ３５〜４０であるが、一般の銅ワイヤの
硬さはビッカース硬さでＨｖ６０以上であり、従って一
般の銅ワイヤをそのまま従来のアルミ電極に接合しよう
とするとボンディング性が悪いという問題が生じ、この
問題を解消するため超音波出力を増大させると、第５図
に示されるようにアルミ電極３ａが接合部周囲に排斥さ
れて、ボール１ａが半導体チップ２に当り、電極３及び
半導体チップ２が損傷を受けるおそれがある。
この発明は、以上のような問題点に鑑み、電極及び半導
体チップが損傷を受けることなく、金属ワイヤと１掘と
を良好に接合できるワイヤボンディング方法を提供する
ことを目的としている。
ところで超音波併用熱圧着ボンディングにおける接合性
について見ると、良好な接合状態を得るためには、材料
表面の酸化皮膜等の吸着物を十分に破壊、除去すること
、及び接合界面における材料の塑性変形により、酸化膜
破壊後の新生面同志の接触面積を拡大することが極めて
重要である。
従って上述のように硬さの異なる金属ワイヤと電極とを
接合する場合において、一旦ポールを十分に変形させて
ボールと電極との接触面積を増大させた後、接合を行な
うようにすれば、上述のように超音波出力を増大させる
ことなく、良好な接合状態が得られるものと期待される
。
（問題点を解決するための手段〕 そこでこの発明は、金属ワイヤを半導体チップの電極に
キャピラリチップを用いかつ超音波振動で接合するワイ
ヤボンディング方法において、超音波振動の振幅を、ボ
ンディング時前半は小さく、後半は大きく設定したもの
である。
〔作用〕
この発明においては、ボンディング時前半は超音波出力
を小さく設定したことから、ボールと電極との接合は行
なわれず、ボールのみが変形してボールと電極との接触
面積が増大し、ボンディング時後半は超音波出力を大き
く設定したことから、ボールと電極との接合が行なわれ
、こうして接触面積を確保した状態でボールと電極との
接合が行なわれるものである。
〔実施例〕
以下、本発明の実施例を図について説明する。
第１図ないし第３図は本発明の一実施例によるワイヤボ
ンディング方法を示す。図において、第４図及び第５図
と同一符号は同図と同一のものを示し、１０は銅ワイヤ
、１０ａボールである。
本実施例の方法では、キャピラリデツプ５を貫通した銅
ワイヤＩＯの先端部にボール１０ａが形成されると、該
ボール１０ａをキャピラリチップ５でもって半導体チッ
プ２上のアルミ電極３に押圧するとともに、これに振幅
ＡＩ（例えば０．０５〜０．１０μｍ）の超音波振動を
時間ｔｌ（例えば１０〜３０　ｍ　５ｅｃ）の間印加す
る。するとボール１０ａとアルミ電極３との接合はまだ
開始されず、ボール１０ａのみが変形し、ボール１０ａ
とアルミ電極３との接触面積が増大するので、次に超音
波振動の振幅をＡ１からＡ２（例えば０．１５〜０．４
０　ｔｔ　ｍ　）に増大し、この超音波振動を時間ｔ２
（例えば２〜１０ｍ５ｅｃ）の間印加すると、ボール１
０ａとアルミ電極３とが接合され、その後銅ワイヤｌＯ
の他端側をリードにステッチボンディングする。
以上のような本実施例の方法では、小さな超音波出力で
もってボールとアルミ電極との接触面積を確保した後、
超音波出力を増大してボールとアルミ電極との接合を行
なうようにしたので、ボンディング中常に大きな超音波
出力を印加する場合のように、アルミ電極が排斥される
という現象は発生せず、電極及び半導体チップが損傷を
受けることなく、良好なボンディング特性を得ることが
できる。その結果、現在ワイヤボンディングに用いられ
ている金ワイヤに代えて低度な銅ワイヤの使用が可能と
なり、大幅な材料原価低減が実現できるとともに、チッ
プ上のアルミ電極との接合部の長期信頬性を向上できる
。
なお、上記実施例では金属ワイヤとして銅ワイヤを用い
た場合について説明したが、この金属ワイヤの材料はパ
ラジウム、アルミニウム、恨あるいはこれらの低元素添
加合金、又は低元素添加銅合金であってもよい。
〔発明の効果〕
以上のように本発明によれば、金属ワイヤを半導体チッ
プの電極にキャピラリチップを用いかつ超音波振動で接
合するワイヤボンディング方法において、超音波振動の
振幅を、ボンディング時前半は小さく、後半は大きく設
定したので、電極及び半導体チップが損傷を受けること
なく、金属ワイヤと電極とを良好に接合でき、金ワイヤ
に代えて低度な金属ワイヤの使用が可能になるという効
果がある。
【図面の簡単な説明】
第１図は本発明の一実施例によるワイヤボンディング方
法の主要部を模式的に示す図、第２図は上記方法を説明
するための超音波出力の時間的変化を示す図、第３図は
ポールボンディング状態を示す図、第４図ｆａ）〜（ｄ
）は各々従来のワイヤボンディング方法を模式的に示す
図、第５図は発明が解決しようとする問題点を説明する
ための図である。 ２・・・半導体チップ、３・・・電極、５・・・キャピ
ラリチップ、１０・・・銅ワイヤ（金属ワイヤ）。 なお図中同一符号は同−又は相当部分を示す。

Claims (1)

    【特許請求の範囲】
  1. （１）半導体チップ上の電極に金属ワイヤをキャピラリ
    チップを用いかつ超音波振動で接合させるワイヤボンデ
    ィング方法であって、 上記超音波振動の振幅を、ボンディング時前半は小さく
    、後半は大きく設定したことを特徴とするワイヤボンデ
    ィング方法。
JP60278645A 1985-12-10 1985-12-10 ワイヤボンデイング方法 Pending JPS62136843A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60278645A JPS62136843A (ja) 1985-12-10 1985-12-10 ワイヤボンデイング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60278645A JPS62136843A (ja) 1985-12-10 1985-12-10 ワイヤボンデイング方法

Publications (1)

Publication Number Publication Date
JPS62136843A true JPS62136843A (ja) 1987-06-19

Family

ID=17600163

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60278645A Pending JPS62136843A (ja) 1985-12-10 1985-12-10 ワイヤボンデイング方法

Country Status (1)

Country Link
JP (1) JPS62136843A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220199571A1 (en) * 2020-12-23 2022-06-23 Skyworks Solutions, Inc. Apparatus and methods for tool mark free stitch bonding

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220199571A1 (en) * 2020-12-23 2022-06-23 Skyworks Solutions, Inc. Apparatus and methods for tool mark free stitch bonding

Similar Documents

Publication Publication Date Title
JP2004088005A (ja) ワイヤボンディング用キャピラリ及びこれを用いたワイヤボンディング方法
JPH06338504A (ja) 半導体装置およびその製造方法
JPS62136835A (ja) 半導体装置の製造方法
JPS62136843A (ja) ワイヤボンデイング方法
JP4385878B2 (ja) 実装方法
JPS62136836A (ja) 半導体装置の製造方法
JPS62136833A (ja) 半導体装置の製造方法
JPS62150836A (ja) 半導体装置
JPS62136834A (ja) 半導体装置の製造方法
JPH05326601A (ja) ワイヤボンディング方法
JPS5948947A (ja) 半導体装置
JPH03274755A (ja) 樹脂封止半導体装置とその製造方法
JPS62136842A (ja) 半導体装置の製造方法
JPS61231731A (ja) 半導体装置の製造方法
JPH02163951A (ja) キャピラリチップと半導体装置のワイヤボンド方法
JPS6316632A (ja) 半導体装置の製造方法
JPS62136838A (ja) 半導体装置
JPS61231736A (ja) 半導体装置の製造方法
JPH03116735A (ja) フリップチップ用ｉｃ及びその製造方法
JPS62150729A (ja) 半導体装置
JPS6188537A (ja) 半導体装置のリ−ド
JPS61231732A (ja) 半導体装置の製造方法
JPS62136839A (ja) 半導体装置
JPS61231735A (ja) 半導体装置の製造方法
JPS61231730A (ja) 半導体装置の製造方法