JPS62136839A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS62136839A
JPS62136839A JP60278650A JP27865085A JPS62136839A JP S62136839 A JPS62136839 A JP S62136839A JP 60278650 A JP60278650 A JP 60278650A JP 27865085 A JP27865085 A JP 27865085A JP S62136839 A JPS62136839 A JP S62136839A
Authority
JP
Japan
Prior art keywords
electrode
layer
semiconductor chip
electrode layer
barrier layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60278650A
Other languages
English (en)
Inventor
Saneyasu Hirota
弘田　実保
Kazumichi Machida
一道 町田
Masaaki Shimotomai
下斗米　将昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60278650A priority Critical patent/JPS62136839A/ja
Publication of JPS62136839A publication Critical patent/JPS62136839A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05075—Plural internal layers
    • H01L2224/0508—Plural internal layers being stacked
    • H01L2224/05082—Two-layer arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05556—Shape in side view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、半導体装置に関し、特にＩＣやトランジス
タなど、半導体チップ上の正極とリードとを金属ワイヤ
を用いて結線して構成される半導体装置に関するもので
ある。
〔従来の技術〕
第３図は従来のこの種の半導体装置におけるワイヤボン
ディング方法を模式的に示したものである。図において
、ｌは金ワイヤ、２は半導体チ・ノブ、３は半導体チッ
プ２上に形成されたアルミ電極、４は銀めっき等の表面
処理が施された銅合金リード、５はボンディングツール
であるキャピラリチップである。
従来のワイヤボンディング方法では、金ワイヤ１の先端
をアーク入熱で溶融させ、これを凝固させてボール部１
ａを形成し、このボール部１ａをアルミ電極３にボール
ボンディングした後（第３図（ａ）、　（ｂ）参照）、
金ワイヤ１の他端側をリード４にステッチボンディング
するようにしており（第３図（Ｃ１，（ｄ）参照）、又
ワイヤ１の接合には主として超音波併用熱圧着方式が用
いられている。
またこの種の半導体装置においては、半導体チップ２と
アルミ電極３との密着性及びオーミックコンタクト性を
確保することが要求され、そのため従来は、半導体チッ
プ２上にアルミ電極を蒸着した後、これに４５０℃、３
０分程度の熱処理を施し、半導体チップ２とアルミ電極
３とを密着させるとともに、両者のオーミックコンタク
ト性を確保するようにしていた。
〔発明が解決しようとする問題点〕
以上のように従来のこの種の半導体装置においては、ボ
ンディング用金属ワイヤとして金ワイヤが使用されてい
るが、この場合コストが高くつくことと、半導体チップ
２上のアルミ電極３との接合部の長期信輔性が低いとい
う欠点があるため、金に代わる材料及びそのボンディン
グ技術が種々検討されている。
ここで材料原価低減及び素子の長期信頼性向上という観
点から、金属ワイヤを金から銅に代える場合について考
える。金属ワイヤを電極にボンディングする場合、良好
な接合状態を得るためには金属ワイヤの硬さと電極の硬
さとが近（以しているのが望ましい。
しかるに一般の銅ワイヤの硬さはビッカース硬さで）Ｉ
ｖ６０以上であるのに対し、従来の半導体チップ上のア
ルミ電極はその製造方法に起因して焼鈍軟化され、その
硬さはビッカース硬さでＨｖ３５〜４０程度であり、従
って一般の銅ワイヤをそのまま従来のアルミ電極に接合
しようとするとボンディング性が悪いという問題が生じ
、この問題を解消するため超音波出力を増大させると、
第４図に示されるように、アルミ電極３ａが接合部周囲
に排斥されて銅ワイヤ１０のボール１０ａが半導体チッ
プ２に当り、電極３及び半導体チップ２が損傷を受ける
おそれがある。
この発明は、以上のような問題点を鑑み、電極及び半導
体チップが損傷を受けることなく、金属ワイヤと電極と
を良好に接合できる半導体装置を提供することを目的と
している。
〔問題点を解決するための手段〕
そこでこの発明は、半導体チップ上の電極とリードを金
属ワイヤを用いて結線してなる半導体装置において、電
極を下側電極層、バリア層及び上側電極層からなる３層
構造とし、下側電極層はこれを高温で蒸着して形成する
とともに、上側電極層はこれを低温で蒸着して形成し、
バリア層はこれを電極層より硬くかつ拡散しにくい材料
を用いて形成したものである。
〔作用〕
この発明において、電極をバリア層を有する３層構造と
したことから、超音波振動によって下側電極層が接合部
外周に排斥されても、金属ワイヤのボールが半導体チッ
プに当たることはなく、下側電極層が排斥されることも
なく、又下側電極層を高温で蒸着するようにしたことが
ら、下側電極層と半導体チフスとの密着性及びオーミッ
クコンタクト性が確保され、さらに上側電極層を低温で
蒸着するようにしたことから、上側電極層はあまり軟化
されず、その本来の硬度が維持され、良好なボンディン
グ性が得られるものである。
〔実施例〕
以下、本発明の実施例を図について説明する。
第１図及び第２図は本発明の一実施例による半導体装置
を示す０図において、第３図及び第４図と同一符号は同
図と同一のものを示し、１ｏは銅ワイヤ、１０ａはボー
ル、１３は下側電極７１）３ａ、バリア層１３ｂ及び上
側電極層１３ｃによって構成された電極で、上記下側電
極Ｎ　１３　ａはアルミニウムを高温で蒸着して形成さ
れるとともに、上記上側電極層１３ｃはアルミニウムを
低温で蒸着して形成され、上記バリア層１３ｂは電極層
１３ａ、１３ｃより硬くかつ拡散しにくい材料であるク
ロムを用いて形成されている。ここでバリア層１３ｂを
拡散しにくい材料としたのは、バリア層１３ｂが電極１
３のアルミニウムあるいは銅ワイヤ１０のボール１０ａ
と反応して金属間化合物層を生成しないようにするため
である。
次に作用効果について説明する。゛ 本装置を製造する場合、まず半導体チップ２上に蒸着法
によってアルミニウム膜を高温で蒸着して下側電極層１
３ａを形成し、該下側電極層１３ａ上にこれも蒸着法に
よってクロム膜を蒸着してバリア層１３ｂを形成し、さ
らに該バリア層１３ｂ上に蒸着法によってアルミニウム
膜を低温で蒸着して上側電極層１３ｃを形成し、こうし
て３層構造の電極１３が形成されると、後は従来と同様
のワイヤボンディング方法によって、即ちキャピラリチ
ップ５を用いかつ超音波振動によって半導体チップ２上
の電極１３に銅ワイヤ１０のボール１０ａをボールボン
ディングするとともに、り一ド４に銅ワイヤ１の他端側
をステッチボンディングする。
以上のような本実施例の装置では、半導体チップの電極
をバリア層を有する３層構造としたので、超音波振動に
よって上側電極層が接合部周囲に排斥されてもボールは
バリア層に当たり、ボールが半導体チップに当たること
はなく、半導体チップの損傷を防止でき、又下側電極層
が接合部外周に排斥されることはなく、電極の損傷を防
止できる。
また本装置では、下側電極層を高温で、上側電極層を低
温で蒸着するようにしたので、下側電極層と半導体チッ
プとの密着性及びオーミックコンタクト性を確保でき、
父上側電極層は熱の影響をあまり受けず、硬度が低下す
ることはほとんどなく、低い超音波出力でもって銅ワイ
ヤを電極に良好に接合でき、これによっても電極及び半
導体チップが損傷を受けるのが防止され、その結実現在
ワイヤボンディングに用いられている金ワイヤに代えて
低廉な銅ワイヤの使用が可能となり、大幅な材料原価低
減及び接合部の長期信頼性向上が実現できる。
なお上記実施例では金属ワイヤとして銅ワイヤを用いた
場合について説明したが、この金属ワイヤの材料はパラ
ジウム、アルミニウム、銀あるいはこれらの低元素添加
合金、又は低元素添加銅合金であってもよい、また電極
のバリア層はクロム以外であってもよく、いずれにして
も電極層より硬くかつ拡散しにくい材料を用いて形成す
ればよい。
〔発明の効果〕
以上のように本発明によれば、半導体チップ上の電極と
リードを金属ワイヤを用いて結線してなる半導体装置に
おいて、電極を下側電極層、バリア層及び上側電極層か
らなる３層構造とし、下側電極層はこれを高温で蒸着し
て形成するとともに、上側電極層はこれを低温で蒸着し
て形成し、バリア層を電極層より硬くかつ拡散しにくい
材料を用いて形成したので、電極及び半導体チップが損
傷を受けることなく、金属のワイヤと電極とを良好に接
合でき、金ワイヤに代えて低廉な金属ワイヤの使用が可
能になるという効果がある。
【図面の簡単な説明】
第１図は本発明の一実施例による半導体装置の構成図、
第２図は上記装置の要部構成図、第３図（３）〜（ｄｌ
は各々ワイヤボンディング方法を示す模式図、第４図は
発明が解決しようとする問題点を説明するための図であ
る。 ２・・・半導体チップ、４・・・リード、１０・・・銅
ワイヤ（金属ワイヤ）、１３・・・電極、１３ａ・・・
下側電極層、１３ｂ・・・バリア層、１３ｃ・・・上側
電極層。 なお図中同一符号は同−又は相当部分を示す。

Claims (1)

    【特許請求の範囲】
  1. （１）半導体チップ上の電極とリードとを金属ワイヤを
    用いて結線してなる半導体装置において、上記電極を、
    高温で蒸着して形成された下側電極層と、低温で蒸着し
    て形成された上側電極層と、上記両電極層間に介設され
    該両電極層より硬くかつ拡散しにくい材料を用いて形成
    されたバリア層とによって構成したことを特徴とする半
    導体装置。
JP60278650A 1985-12-10 1985-12-10 半導体装置 Pending JPS62136839A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60278650A JPS62136839A (ja) 1985-12-10 1985-12-10 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60278650A JPS62136839A (ja) 1985-12-10 1985-12-10 半導体装置

Publications (1)

Publication Number Publication Date
JPS62136839A true JPS62136839A (ja) 1987-06-19

Family

ID=17600232

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60278650A Pending JPS62136839A (ja) 1985-12-10 1985-12-10 半導体装置

Country Status (1)

Country Link
JP (1) JPS62136839A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007507080A (ja) * 2003-08-22 2007-03-22 アーベーベー・シュバイツ・アーゲー 電力半導体モジュールの中の接触構造のための圧力接触バネ
US10098456B2 (en) 2011-01-05 2018-10-16 Electrolux Home Products Corporation N. V. Built-in electrical household appliance and household appliance assembly and built-in furniture unit for a household appliance

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007507080A (ja) * 2003-08-22 2007-03-22 アーベーベー・シュバイツ・アーゲー 電力半導体モジュールの中の接触構造のための圧力接触バネ
JP4800764B2 (ja) * 2003-08-22 2011-10-26 アーベーベー・シュバイツ・アーゲー 電力半導体モジュールの中の接触構造のための圧力接触バネ
US10098456B2 (en) 2011-01-05 2018-10-16 Electrolux Home Products Corporation N. V. Built-in electrical household appliance and household appliance assembly and built-in furniture unit for a household appliance

Similar Documents

Publication Publication Date Title
JP4766725B2 (ja) 電子部品の製造方法
JPH04326534A (ja) 半導体装置のチップボンディング方法
JPH08264697A (ja) 半導体リードフレーム構造およびその製造方法
JP2001274195A (ja) 半導体装置及びその製造方法
JPS61204953A (ja) ハ−メチツクシ−ルカバ−及びその製造方法
JPH03233972A (ja) 半導体装置用電極およびその製造方法
JPS62136839A (ja) 半導体装置
JPS62136838A (ja) 半導体装置
JPS62136835A (ja) 半導体装置の製造方法
JPS6143461A (ja) 薄膜多層配線基板
JPH03274755A (ja) 樹脂封止半導体装置とその製造方法
JPH03152945A (ja) 半導体チップのワイヤボンディング方法
JPH02114545A (ja) ワイヤボンディング接続方法
JPH11238840A (ja) リードフレーム
JPH01244653A (ja) 半導体装置
JPS63293951A (ja) 半導体素子電極構造
JP2003338514A (ja) 超音波接合構造及び方法、並びにそれを用いた電子部品及びその製造方法
JPH02183538A (ja) 半導体装置
JPS62136836A (ja) 半導体装置の製造方法
JPS5934148Y2 (ja) 双方向性サイリスタ
JPS58199533A (ja) 半導体装置
JP2845002B2 (ja) 半導体装置用複合リードフレーム
JPH03191527A (ja) 半導体素子の電極構造
JPS62136843A (ja) ワイヤボンデイング方法
JPS60195952A (ja) 半導体装置