JPH03233972A - 半導体装置用電極およびその製造方法 - Google Patents

半導体装置用電極およびその製造方法

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Publication number
JPH03233972A
JPH03233972A JP2029029A JP2902990A JPH03233972A JP H03233972 A JPH03233972 A JP H03233972A JP 2029029 A JP2029029 A JP 2029029A JP 2902990 A JP2902990 A JP 2902990A JP H03233972 A JPH03233972 A JP H03233972A
Authority
JP
Japan
Prior art keywords
film
aluminum
aluminum film
electrode
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2029029A
Other languages
English (en)
Inventor
Jutaro Kotani
小谷　壽太郎
Masahiro Ihara
井原　正広
Hideaki Nagura
名倉　英明
Masami Yokozawa
横沢　眞覩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP2029029A priority Critical patent/JPH03233972A/ja
Publication of JPH03233972A publication Critical patent/JPH03233972A/ja
Priority to US07/929,472 priority patent/US5298793A/en
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 産業上の利用分野 本発明は銅線を用いて半導体素子と外部リードを結線さ
せるのに適した半導体素子側に形成された半導体装置用
電極とその製造方法に関するものである。
従来の技術 半導体装置において、半導体素子と外部リードとを接続
するために、金線やアルミニウム線が広く用いられてき
たが、近年、金線やアルミニウム線に代わる細線として
銅線が注目され実用化されつつある。また、半導体素子
側の電極としてはアルミニウム膜が広く用いられている
が、近年、アルミニウムに銅やシリコンを添加するアル
ミニウム単層膜やまたはアルミニウム、バナジウム、ア
ルミニウムを順次形成する三層構造の電極も製造され信
頼性向上が図られている。
発明が解決しようとする課題 銅線を用い、超音波熱圧着法によって、アルミニウム膜
を電極とした半導体素子と外部リードを結線する際、条
件に応じて、二つの断線不良が発生する。すなわち、一
つは接着条件が不充分な場合は鋼線を溶解させて作った
銅ボールとアルミニウム膜との間のはずれを含む接着不
良である。また接着条件が過度の場合は、アルミニウム
膜下の半導体基板を破壊させる不良である。接着条件は
主に接着温度、印加する超音波のパワー、時間および荷
重によって決まる。銅はアルミニウムに比較して硬度が
高いため、銅ボールを変形させてアルミニウム膜に接着
する際、金線やアルミニウム線を用いて接着する時に比
べて大きな接着のためのパワーと荷重を必要とする。そ
のため、接着条件が不充分であるとはずれによる断線と
なり、過度であると半導体基板にダメージを与え、半導
体基板を破壊させ、断線不良となってしまう。前記接着
不良と半導体基板の破壊をおこさない中間の条件が最適
条件である。しかし、アルミニウム膜を電極とした場合
、この最適接着領域が狭く、接着条件の少しのばらつき
によって、接着不良あるいは、半導体基板の破壊の両不
良を発生させて半導体装置として致命的な断線不良とな
ってしまう。本発明は、銅線を用いて接着する際に適し
た半導体装置用電極およびその製造方法を提案するもの
で、それによって接着条件に対して広い最適接着領域を
確保するものである。
課題を解決するための手段 本発明の半導体用電極は、半導体素子側の電極を半導体
基板と接触する第１のアルミニウム膜。
つづいてＡｅ　３Ｎ　ｉ膜とし、この上に銅と接触する
第２のアルミニウム膜が形成された三層構造とするもの
である。そして、この構造の電極を得る製造方法は半導
体基板上に真空蒸着によって順次、第１のアルミニウム
膜と、ニッケル膜、および第２のアルミニウム膜を形成
のち、不活性雰囲気中で４５０℃から５５０℃の温度範
囲で３０分間程熱処理し、第１と第２のアルミニウム膜
にはさまれたニッケル膜を固相反応によってＡ（！３Ｎ
ｉ膜とするものである。
作用 半導体素子側の電極をアルミニウム、　Ａ　Ｑ　３　Ｎ
　ｉ＋アルミニウムの三層構造とすることで、銅線を接
着する際の最適接着領域を著しく拡大できる。すなわち
、半導体基板と接触する第１のアルミニウム膜は、半導
体基板との接触抵抗を下げるために、また、硬いＡｅ３
Ｎｉと半導体基板との接着時の応力緩和にも効果的であ
る。また、硬度の高いＡｅ３Ｎｉ膜層を硬度の低いアル
ミニウム膜ではさむことで銅線を接着する際の接着力に
対して、半導体基板の破壊を緩和させることができる。
さらに銅ボールと接触する第２のアルミニウム膜は、銅
ボールと合金化することによって良好な接着を得ること
ができる。
実施例 本発明の実施例を図でもって説明する。第１図は本発明
による半導体装置の電極構造を示す断面図である。半導
体装置としてはプレーナ型トランジスタを例にして示す
。半導体基板１の領域内に、ベース領域２およびエミッ
タ領域３を形成したのち、二酸化硅素膜４の一部を除き
、ベース電極とエミッタ電極の形成用窓を形成する。そ
して第１のアルミニウム膜５とニッケル膜６ａそして第
２のアルミニウム膜７を真空蒸着で形成したのち、ベー
ス電極とエミッタ電極のみの金属層を残す。しかるのち
・、窒素雰囲気中で５００℃の温度で３０分間熱処理し
、ニッケルとアルミニウムを固相反応させニッケル膜６
ａをＡｅ３Ｎｉ膜６ｂとすることにより半導体装置用電
極が形成される。
さらに詳しく説明すると、第１のアルミニウム膜５と第
２のアルミニウム膜７にはさまれたＡｅ：＋Ｎｉ６ｂは
まず、半導体基板１に第１のアルミニウム膜５を厚さが
３μ、つづいてニッケル膜６ａを厚さが０．５μ、そし
て第２のアルミニウム膜７を厚さが２μになるまで真空
蒸着により形成したのち、不活性雰囲気中で４５０℃か
ら５５０℃の温度範囲で約３０分間熱処理することによ
り、容易に得られる。しかしながら、第１および第２の
アルミニウム膜は厚み１μ以上に、またニッケル膜の厚
みは０．７μ以下にすることが必要である。なぜならば
、アルミニウム膜に対してニッケル膜が厚すぎると熱処
理によってアルミニウム膜の全部がＡＣ３Ｎｉとなって
しまい、直接に半導体基板もしくは、鋼と接触すること
になり、接触抵抗の増大や接着力の低下となってしまう
からである。また、いたずらにニッケル膜に対してアル
ミニウム膜を厚くすることは、真空蒸着に長時間を要し
、またホトエツヂングによる微細加工の精度低下となる
。第１のアルミニウム膜としては１〜４μ、ニッケル膜
は０．２〜０．７μ、第２のアルミニウム膜としては１
〜３μが適当であった。
第２図には第１図に示した半導体素子のエミッタ電極部
の拡大図に銅＆’ｊｔ　８を結線させた状態を示す。な
お、同一名称には同一番号を付した。銅線８の先端は球
状であったものが、超音波印加と荷重により、変形し第
２のアルミニウム膜７と接する状態を示す。
第３図には縦軸に接着強度、横軸に接着条件をとり、そ
の最適接着領域を従来例（アルミニウム膜−層電極）の
場合と本発明による実施例の場合とを比較して示した。
なお、Ａは従来例での最適接着領域、Ｂは本発明による
最適接着領域である。第３図かられかるように、従来例
では最適接着領域が狭い。
発明の効果 本発明によれば、接着条件を強くしても半導体基板の破
壊は発生せず、その結果、最適接着領域を広くすること
ができ工業的利用価値大である。
【図面の簡単な説明】
第１図は本発明による半導体装置用電極の断面図、第２
図はその電極に鋼線を接着した状態を示す拡大断面図、
第３図は本発明と従来例の場合の最適接着領域を示す図
である。 １・・・・・・半導体基板、２・・・・・・ベース領域
、３・・・・・・エミッタ領域、二酸化硅素膜、５・・
・・・・第１のアルミニウム膜、６ａ・・・・・・ニッ
ケル膜、６ｂ・・・・・・Ａｅ３Ｎｉ膜、７・・・・・
・第２のアルミニウム膜、８・・・・・・Ｍ線。

Claims (2)

    【特許請求の範囲】
  1. （１）半導体基板上に、第１のアルミニウム膜とＡｌ＿
    ３Ｎｉ膜と第２のアルミニウム膜が順次積層された半導
    体装置用電極。
  2. （２）全ての拡散処理が終了した半導体基板上に第１の
    アルミニウム膜、ニッケル膜、つづいて第２のアルミニ
    ウム膜の三層を真空蒸着で形成した後、不活性雰囲気中
    で熱処理を施し、ニッケル膜とアルミニウム膜を固相反
    応させて Ａｌ＿３Ｎｉを形成し、前記半導体基板上に第１のアル
    ミニウム膜とＡｌ＿３Ｎｉ膜および第２のアルミニウム
    膜の三層構造を形成することを特徴とする半導体装置用
    電極の製造方法。
JP2029029A 1990-02-08 1990-02-08 半導体装置用電極およびその製造方法 Pending JPH03233972A (ja)

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US07/929,472 US5298793A (en) 1990-02-08 1992-08-13 Semiconductor device including an electrode

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