JP2511289B2 - 半導体装置 - Google Patents

半導体装置

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Publication number
JP2511289B2
JP2511289B2 JP63074658A JP7465888A JP2511289B2 JP 2511289 B2 JP2511289 B2 JP 2511289B2 JP 63074658 A JP63074658 A JP 63074658A JP 7465888 A JP7465888 A JP 7465888A JP 2511289 B2 JP2511289 B2 JP 2511289B2
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JP
Japan
Prior art keywords
wiring
resistance
semiconductor device
corrosion resistance
reliability
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63074658A
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English (en)
Other versions
JPH01248538A (ja
Inventor
史朗 小林
恵美子 室伏
雅彦 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
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Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP63074658A priority Critical patent/JP2511289B2/ja
Priority to US07/327,609 priority patent/US5023698A/en
Priority to KR1019890003984A priority patent/KR930010064B1/ko
Priority to DE68916083T priority patent/DE68916083T2/de
Priority to EP89105608A priority patent/EP0335383B1/en
Publication of JPH01248538A publication Critical patent/JPH01248538A/ja
Application granted granted Critical
Publication of JP2511289B2 publication Critical patent/JP2511289B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
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    • H01L23/53233—Copper alloys
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  • Engineering & Computer Science (AREA)
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  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Conductive Materials (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置に係り、特に高信頼性と高速応答
性に優れた半導体装置に関する。
〔従来の技術〕
従来、半導体素子の論理回路を構成する配線及び電極
材料には、加工性に優れた純AlあるいはAl−Si系合金が
用いられてきた。
半導体素子の近年の高集積化に伴い、配線パターンの
微細化が進み、配線幅が１μｍ以下の配線膜の形成が要
求されてきている。しかし、配線断面積の減小に伴い、
配線遅延時間の増加による回路の応答速度の低下及び発
熱量の増加、電流密度の増加に伴うエレクトロマイグレ
ーシヨンの進行による配線寿命の低下等の問題点が懸念
されている。したがつて、配線材料としては低抵抗で耐
熱製、耐エレクトロマイグレーシヨン性に優れたものが
要求されている。更に配線膜の薄膜化に伴い、耐食信頼
性にも優れた材料を使わなければならない。
しかし、従来のAl系配線材料は、抵抗も高く、耐熱性
や耐エレクトロマイグレーシヨン性の点で問題がある。
そこで、この問題を回避するために、特開昭61−294838
号公報に記載のように、Al系配線材料よりも電気伝導
性、耐熱性、耐エレクトロマイグレーシヨン性に優れた
Cuを用いた配線材料が開発されている。すなわちCuはAl
に比べて、電気抵抗が約３分の２、融点も400℃以上高
く、またエレクトロマイグレーシヨンの進行による配線
寿命も10倍以上優れているので、半導体装置を形成した
場合、その高速応答性及び信頼性の向上がはかれる。
〔発明が解決しようとする課題〕
しかしCuは耐酸化性及び耐食性の点で問題がある。す
なわち、CuはAlに比べてその表面に生成する酸化皮膜の
保護性が低いために、高温酸化を受けやすく、また酸化
性溶液中では腐食しやすい。配線材料は、半導体装置の
製造工程において高温のガス雰囲気や硝フツ酸溶液のよ
うな酸化性水溶液環境にさらされたり、更に組立後の検
査時には、高温高湿度条件で耐湿信頼性試験されたりす
るので、高い耐食性が要求されている。したがつて、配
線材料としての電気伝導性、耐熱性、耐エレクトロマイ
グレーシヨン性を満足し、更に耐食性の向上をはかるこ
とが重要な技術課題である。
本発明の目的は、電気伝導性、耐熱性、耐エレクトロ
マイグレーシヨン性及び耐食性に優れた配線材料を用い
ることにより、高速応答性と信頼性に優れた半導体装置
を提供することにある。
〔課題を解決するための手段〕
本発明を概説すれば、本発明は半導体装置に関する発
明であつて、半導体チツプ上に回路配線及び／又は電極
を有する半導体装置において、前記回路配線及び／又は
電極は、重量比でAl0.01〜0.5％、Fe0.01〜0.2％、Mg0.
01〜0.3％、Ni0.01〜0.5％、Si0.01〜0.2％、Sn0.01〜
0.5％、及びZn0.01〜２％の少なくとも１種と、残部がC
u及び不可避不純物であるCu合金からなることを特徴と
する。
すなわち本発明は、Cuよりも卑な金属元素を、電気伝
導性をあまり低下させない範囲でCuに微量添加すること
により、Cuのもつ高導電性、耐熱性、耐エレクトロマイ
グレーシヨン性を低下させずに耐食性を向上させたCu合
金を、配線材料に用いることに特徴がある。そして、こ
の配線材料を用いることにより、高速応答性と信頼性に
優れた半導体装置を提供することができる。
Cuよりも卑な金属元素を微量添加したCu合金を配線材
料に用いることが、半導体装置の高速応答性と信頼性向
上に対し、どのように作用するかを次に述べる。
半導体素子内の配線内に流れる信号の遅延時間は、半
導体装置の高速応答性を決める重要な因子であるが、そ
の値は配線の抵抗に比例する。したがつて遅延時間は、
配線の長さ及び比抵抗に比例し、配線幅に反比例する。
素子の高集積化に伴う配線幅の縮小による遅延時間の遅
れを減らすためには、より低抵抗の配線材料を用いる必
要があり、Cuは比抵抗が1.7μΩcmとAlの2.7μΩcmに比
べて、かなり低いので有利な材料である。またCuはAlに
比べて融点が400℃ほど高いので耐熱性の点でも有利で
ある。更に、耐エレクトロマイグレーシヨン性を決める
因子である積層欠陥エネルギもAlの200erg/cm2に比べ
て、Cuは40erg/cm2と小さくマイグレーシヨンが起りに
くい性質を有している。以上のように、CuはAlに比べて
配線材料として優れた特性を有しているが、耐食性の点
で問題がある。
Cuは、配線膜形成後のアニール条件である400〜500℃
の温度の大気中において１時間当り数μｍ酸化されるの
に対し、Alはわずか数100Åしか酸化されない。また水
溶液環境下においては、中性溶液ではほぼ同程度の耐食
性を有しているが、硝酸のような酸化性溶液中ではCuは
Alに比べて腐食しやすい。これは金属の耐食性は金属表
面に生成する酸化物の保護性に依存しており、Al表面に
生成するAl2O3を主成分とする酸化膜は極めて安定であ
るのに対して、Cu表面に生成するCuOやCu2Oは酸化性環
境下では保護性に乏しいためである。このCuの耐食性を
改善するために、従来より様々な耐食Cu合金が開発され
ているが、いずれも合金元素を高濃度添加するために、
Cuのもつ高電気伝導性が著しく低下し、その比抵抗はAl
の値よりも高くなつてしまう。以上のことより、Cuのも
つ優れた各特性を低下させずに、耐食性を向上させるた
めには、耐食性向上元素をCuに微量添加することが有効
である。
添加元素としてはCuよりも卑な金属が有効である。卑
な金属元素を添加したCuを腐食性環境下にさらすと、Cu
は酸化されずに添加元素が選択的に酸化されて表面にそ
の酸化物膜が生成し、この酸化膜が保護膜となり、下地
のCuの腐食を抑制する作用を示す。添加元素としては、
Al、Fe、Mg、Ni、Si、Sn及びZnが挙げられ、これらの群
から選択した１種以上の元素を添加するのが好ましい。
AlをCuに添加した場合、腐食環境下ではAlは選択的に
酸化され表面に生成したAl2O3がCuの腐食を抑制する作
用を示す。その添加量は0.01〜0.5重量％が好ましく、
この範囲未満では添加効果はなく、またより多量である
と電気伝導性がAlよりも低下してしまうので好ましくな
い。またAlはCuに添加すると固溶強化するので強度が増
し、耐マイグレーシヨン性の向上にも効果がある。
Alと同様に、Fe、Mg、Ni、Si、Sn、Znも、Cuに添加す
ると選択的に酸化され、表面に各々、Fe2O3＋Fe3O4、Mg
O、Ni2O3＋Ni3O4、SiO2、SnO2、ZnOを主成分とする保護
性酸化膜を形成し耐食性向上に効果がある。そして、そ
の適正添加量は、電気伝導性が著しく低下しない範囲内
であり、それぞれ重量比でFeについては0.01〜0.2％、M
gについては0.01〜0.3％、Niについては0.01〜0.5％、S
iについては0.01〜0.2％、Snについては0.01〜0.5％、Z
nについては0.01〜２％が好ましい。
添加量の下限値は、耐食性、耐マイグレーシヨン性を
向上させるための最低濃度であり、一方上限値は、Cu合
金の比抵抗がAlの比抵抗を超えない、最大許容添加量で
ある。Cu合金の比抵抗と添加量との関係は、各添加元素
によつて異なつている。各元素のうち、FeはCuに添加す
ると析出強化し、一方Ni、Si、Sn、Znは固溶強化するの
でいずれも強度が増して耐マイグレーシヨン性を向上さ
せる効果もある。
各元素のうち、耐食性向上の点で、Zn及びNiは効果が
著しく、特にZnは最大許容添加量が高いので有利であ
る。また、Alは配線膜形成後のアニール時のような400
℃以上の高温環境下で耐食性向上効果がある。
以上述べた金属元素を１種以上、Cuに添加したCu合金
は耐熱性、耐マイグレーシヨン性、耐食性にも優れ、電
気伝導性も純Cuと同程度である。このCu合金を半導体素
子内の配線材料として用いることにより、高速応答性と
高信頼性の半導体装置を提供することができる。
その半導体装置の１例を第１図に示す。すなわち第１
図は本発明装置の１実施例の構造を示した断面図であ
り、符号１はSi基板、２は拡散層、３は絶縁層、４は配
線膜層、５は電極部、６はAuワイヤ、７は素子保護膜を
意味する。
〔実施例〕
以下、本発明を実施例により更に具体的に説明する
が、本発明はこれら実施例に限定されない。
実施例１ 第１表は、Si基板上に配線幅が0.8μｍの４メガDRAM
のマスクパターンを用いて、スパツタ法により各種組成
の配線層を形成させた半導体素子について特性試験を行
つた結果である。高速応答性については信号パルスの入
出力間の時間すなわち遅延時間を測定し評価した。耐マ
イグレーシヨン性については、180℃で配線に106A／cm2
の電流を流す高温通電試験における500時間経過時の配
線断線率を測定した。耐湿信頼性については、120℃、9
5％RH条件に放置するPCT（プレツシヤクツカ）試験にお
ける250時間経過時の配線断線率により評価した。
第１表から判るように本発明による配線材料を用いた
半導体素子は、高速応答性及び耐マイグレーシヨン性に
ついてはCuを用いた素子と同程度でありAl系配線を用い
た場合より優れている。一方、耐湿信頼性については、
比較例であるCuを用いた場合に比べて大幅に改善されて
おりAl系配線を用いたものと同程度の信頼性を有してい
る。
以上説明したように、本発明による組成のCu合金配線
を用いることにより、高速応答性と信頼性に優れた半導
体装置を製造することができる。
実施例２ 第１図は本発明装置の１実施例の構造を示した断面図
である。図において、１はSi基板、２はＰ、As等の不純
物をドープした拡散層、３は窓明けされたSiO2からなる
絶縁層、４は微量元素を添加したCu合金をスパツタ法あ
るいは蒸着法で形成させた配線膜層、６は配線層のパツ
ド電極部５にボンデイングされたAuワイヤ、７はPSG
（リンケイ酸ガラス）からなる素子保護膜（パツシベー
シヨン膜）である。
このように配線膜層にCu合金を用いると、Al系配線を
用いた場合に比べ耐食性、耐マイグレーシヨン性、高速
応答性に優れた半導体装置を構成することができる。
〔発明の効果〕
本発明によれば、電気伝導性、耐熱性、耐マイグレー
シヨン性、耐食性に優れた配線材料を用いることによ
り、配線幅が１μｍ以下の微細配線パターンを形成して
も、半導体装置としての高速応答性と信頼性向上に効果
がある。
【図面の簡単な説明】
第１図は本発明装置の１実施例の構造を示した断面図で
ある。 1:Si基板、2:拡散層、3:絶縁層、4:配線膜層、5:電極
部、6:Auワイヤ、7:素子保護膜

Claims (1)

    (57)【特許請求の範囲】
  1. 【請求項１】半導体チツプ上に回路配線及び／又は電極
    を有する半導体装置において、前記回路配線及び／又は
    電極は、重量比でAl0.01〜0.5％、Fe0.01〜0.2％、Mg0.
    01〜0.3％、Ni0.01〜0.5％、Si0.01〜0.2％、Sn0.01〜
    0.5％、及びZn0.01〜２％の少なくとも１種と、残部がC
    u及び不可避不純物であるCu合金からなることを特徴と
    する半導体装置。
JP63074658A 1988-03-30 1988-03-30 半導体装置 Expired - Lifetime JP2511289B2 (ja)

Priority Applications (5)

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JP63074658A JP2511289B2 (ja) 1988-03-30 1988-03-30 半導体装置
US07/327,609 US5023698A (en) 1988-03-30 1989-03-23 Semiconductor device
KR1019890003984A KR930010064B1 (ko) 1988-03-30 1989-03-29 반도체 장치
DE68916083T DE68916083T2 (de) 1988-03-30 1989-03-30 Halbleiteranordnung mit einer Metallisierungsschicht.
EP89105608A EP0335383B1 (en) 1988-03-30 1989-03-30 Semiconductor device having a metallization film layer

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JP63074658A JP2511289B2 (ja) 1988-03-30 1988-03-30 半導体装置

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JPH01248538A JPH01248538A (ja) 1989-10-04
JP2511289B2 true JP2511289B2 (ja) 1996-06-26

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JP (1) JP2511289B2 (ja)
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Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2714606B2 (ja) * 1988-05-16 1998-02-16 日本電信電話株式会社 配線層及びその製法
US5801444A (en) * 1989-09-29 1998-09-01 International Business Machines Corporation Multilevel electronic structures containing copper layer and copper-semiconductor layers
JPH03233972A (ja) * 1990-02-08 1991-10-17 Matsushita Electron Corp 半導体装置用電極およびその製造方法
US5130274A (en) * 1991-04-05 1992-07-14 International Business Machines Corporation Copper alloy metallurgies for VLSI interconnection structures
US5243222A (en) * 1991-04-05 1993-09-07 International Business Machines Corporation Copper alloy metallurgies for VLSI interconnection structures
US5565378A (en) * 1992-02-17 1996-10-15 Mitsubishi Denki Kabushiki Kaisha Process of passivating a semiconductor device bonding pad by immersion in O2 or O3 solution
JP2534434B2 (ja) * 1992-04-30 1996-09-18 インターナショナル・ビジネス・マシーンズ・コーポレイション 耐酸化性化合物およびその製造方法
EP0601509A1 (en) * 1992-12-07 1994-06-15 Nikko Kyodo Co., Ltd. Semiconductor devices and method of manufacturing the same
US5288456A (en) * 1993-02-23 1994-02-22 International Business Machines Corporation Compound with room temperature electrical resistivity comparable to that of elemental copper
US5622608A (en) * 1994-05-05 1997-04-22 Research Foundation Of State University Of New York Process of making oxidation resistant high conductivity copper layers
EP0751567B1 (en) * 1995-06-27 2007-11-28 International Business Machines Corporation Copper alloys for chip interconnections and method of making
WO1997011485A1 (fr) * 1995-09-18 1997-03-27 Hitachi, Ltd. Dispositif a semiconducteur et son procede de fabrication
WO1997030480A1 (en) * 1996-02-16 1997-08-21 Alliedsignal Inc. Low resistivity thin film conductor for high temperature integrated circuit electronics
DE69929607T2 (de) * 1998-06-30 2006-07-27 Semitool, Inc., Kalispell Metallisierungsstrukturen für mikroelektronische anwendungen und verfahren zur herstellung dieser strukturen
JP2000349085A (ja) 1999-06-01 2000-12-15 Nec Corp 半導体装置及び半導体装置の製造方法
US6858102B1 (en) * 2000-11-15 2005-02-22 Honeywell International Inc. Copper-containing sputtering targets, and methods of forming copper-containing sputtering targets
US6113761A (en) 1999-06-02 2000-09-05 Johnson Matthey Electronics, Inc. Copper sputtering target assembly and method of making same
US6391163B1 (en) * 1999-09-27 2002-05-21 Applied Materials, Inc. Method of enhancing hardness of sputter deposited copper films
US6432819B1 (en) * 1999-09-27 2002-08-13 Applied Materials, Inc. Method and apparatus of forming a sputtered doped seed layer
JP3456454B2 (ja) * 1999-09-30 2003-10-14 株式会社村田製作所 ワイヤを有する電子部品
US6469386B1 (en) * 1999-10-01 2002-10-22 Samsung Aerospace Industries, Ltd. Lead frame and method for plating the same
US6440849B1 (en) * 1999-10-18 2002-08-27 Agere Systems Guardian Corp. Microstructure control of copper interconnects
EP1232525A2 (en) 1999-11-24 2002-08-21 Honeywell International, Inc. Conductive interconnection
JP3542311B2 (ja) * 2000-01-28 2004-07-14 株式会社ルネサステクノロジ 半導体装置
US20020064931A1 (en) * 2000-07-03 2002-05-30 E. C. Ong Method and apparatus for applying a protective over-coating to a ball-grid-array (BGA) structure
US20030118798A1 (en) 2001-12-25 2003-06-26 Nec Electronics Corporation Copper interconnection and the method for fabricating the same
EP1471164B1 (en) * 2002-01-30 2013-01-23 JX Nippon Mining & Metals Corporation Copper alloy sputtering target and method for manufacturing the target
JP4794802B2 (ja) * 2002-11-21 2011-10-19 Ｊｘ日鉱日石金属株式会社 銅合金スパッタリングターゲット及び半導体素子配線
US7740721B2 (en) * 2003-03-17 2010-06-22 Nippon Mining & Metals Co., Ltd Copper alloy sputtering target process for producing the same and semiconductor element wiring
EP1656467A2 (en) * 2003-08-21 2006-05-17 Honeywell International Inc. Copper-containing pvd targets and methods for their manufacture
US7189292B2 (en) 2003-10-31 2007-03-13 International Business Machines Corporation Self-encapsulated silver alloys for interconnects
JP4542008B2 (ja) * 2005-06-07 2010-09-08 株式会社神戸製鋼所 表示デバイス
US20090186230A1 (en) * 2007-10-24 2009-07-23 H.C. Starck Inc. Refractory metal-doped sputtering targets, thin films prepared therewith and electronic device elements containing such films
JP5207120B2 (ja) * 2008-02-05 2013-06-12 三菱マテリアル株式会社 熱欠陥発生がなくかつ密着力に優れた液晶表示装置用配線および電極
US8560990B2 (en) 2010-01-13 2013-10-15 International Business Machines Corporation Method of managing electro migration in logic designs and design structure thereof
JP2012060015A (ja) * 2010-09-10 2012-03-22 Hitachi Cable Ltd 電子デバイス配線用Ｃｕ合金スパッタリングターゲット材、及び素子構造
US9865673B2 (en) * 2015-03-24 2018-01-09 International Business Machines Corporation High resistivity soft magnetic material for miniaturized power converter

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5841782B2 (ja) * 1978-11-20 1983-09-14 玉川機械金属株式会社 Ｉｃ用リ−ド材
JPS5943570A (ja) * 1982-09-06 1984-03-10 Hitachi Ltd 薄膜配線
JPS60221541A (ja) * 1984-04-07 1985-11-06 Kobe Steel Ltd 熱間加工性の優れた銅合金
JPS6160846A (ja) * 1984-08-31 1986-03-28 Tamagawa Kikai Kinzoku Kk 半導体装置用銅合金リ−ド材
EP0178481B1 (en) * 1984-09-19 1993-02-10 Olin Corporation Hermetically sealed semiconductor package
US4805009A (en) * 1985-03-11 1989-02-14 Olin Corporation Hermetically sealed semiconductor package
US4704626A (en) * 1985-07-08 1987-11-03 Olin Corporation Graded sealing systems for semiconductor package
JPS6213058A (ja) * 1985-07-10 1987-01-21 Nippon Telegr & Teleph Corp <Ntt> ばね材料
JPS6254048A (ja) * 1985-09-02 1987-03-09 Hitachi Metals Ltd リ−ドフレ−ム用銅合金
EP0260906B1 (en) * 1986-09-17 1993-03-10 Fujitsu Limited Method of producing semiconductor device and semiconductor device
JPS63240047A (ja) * 1987-03-27 1988-10-05 Fujitsu Ltd 半導体装置における配線形成方法
JPH01124238A (ja) * 1987-11-09 1989-05-17 Fujitsu Ltd 半導体集積回路用配線およびその形成方法

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Publication number Publication date
DE68916083D1 (de) 1994-07-21
EP0335383A2 (en) 1989-10-04
EP0335383A3 (en) 1990-05-30
US5023698A (en) 1991-06-11
EP0335383B1 (en) 1994-06-15
KR890015365A (ko) 1989-10-30
KR930010064B1 (ko) 1993-10-14
DE68916083T2 (de) 1995-01-19
JPH01248538A (ja) 1989-10-04

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