TWI569396B - 具有焊線的晶片結構 - Google Patents

具有焊線的晶片結構 Download PDF

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Publication number
TWI569396B
TWI569396B TW103142590A TW103142590A TWI569396B TW I569396 B TWI569396 B TW I569396B TW 103142590 A TW103142590 A TW 103142590A TW 103142590 A TW103142590 A TW 103142590A TW I569396 B TWI569396 B TW I569396B
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Taiwan
Prior art keywords
metal layer
wafer
copper
alloy
wire
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TW103142590A
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English (en)
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TW201622091A (zh
Inventor
林育民
林柏丞
張景堯
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財團法人工業技術研究院
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Application filed by 財團法人工業技術研究院 filed Critical 財團法人工業技術研究院
Priority to TW103142590A priority Critical patent/TWI569396B/zh
Priority to CN201510013448.1A priority patent/CN105845653A/zh
Priority to US14/668,994 priority patent/US9484315B2/en
Publication of TW201622091A publication Critical patent/TW201622091A/zh
Application granted granted Critical
Publication of TWI569396B publication Critical patent/TWI569396B/zh

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    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
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Description

具有焊線的晶片結構
本發明是有關於一種晶片結構，且特別是有關於一種具有焊線的晶片結構。
由於石油耗盡的危機，汽車節能科技為現階段人類文明發展最重要的目標。隨著人口結構集中於都市，人們每天的乘車通勤時間逐漸增加，且人口的老年化使得行車時間更為拉長，因此著重車體空間、安全與節能的個人電動車正逐漸發展，業界與研究單位皆積極投入此相關技術的研發。
打線接合為車用功率模組的其中一項關鍵技術。以往大多藉由鋁焊線進行車用功率模組之打線接合，但隨著近來車用功率模組的功率大幅增加，業界逐漸嘗試使用熔點較高且導電性較好的銅焊線取代鋁焊線。然而，銅焊線與晶片上的鋁接墊之間的介面在高功率之車用功率模組的高溫工作環境下易產生化學反應生成介金屬化合物，此化學反應導致銅焊線與鋁接墊之間產生孔洞而破壞其接合強度。此外，銅焊線的硬度高於鋁接墊的硬度，這代表在打線過程中銅焊線較不易變形，故須增加打線時的接合 力才能使銅焊線產生足夠變形量而達到良好的接合強度，然此舉可能引發較大的應力集中而破壞硬度較低的鋁接墊或對鋁接墊下方的晶片造成損害。
本發明提供一種晶片結構，其焊線可維持良好的接合強度，且可避免晶片在打線製程中受到損害。
本發明的晶片結構包括一晶片、一第一金屬層、一第二金屬層及一焊線。第一金屬層配置於晶片上，第一金屬層的材質包括鎳或鎳合金。第二金屬層配置於第一金屬層上，第二金屬層的材質包括銅或銅合金。焊線連接於第二金屬層，焊線的材質包括銅或銅合金。
本發明的晶片結構包括一晶片、一第一金屬層、一第二金屬層及一焊線。第一金屬層配置於晶片上，第一金屬層的材質包括鎳或鎳合金。第二金屬層配置於第一金屬層上，第二金屬層的材質包括鋁或鋁合金。焊線連接於第二金屬層，焊線的材質包括銅或銅合金。
本發明的晶片結構包括一晶片、一第一金屬層、一第二金屬層及一焊線。第一金屬層配置於晶片上，第一金屬層的材質包括鎳。第二金屬層配置於第一金屬層上，第二金屬層的材質包括鈀或鈀合金。焊線連接於第二金屬層，焊線的材質包括銅或銅合金。
在本發明的一實施例中，上述的焊線的線徑大於等於102微米。
在本發明的一實施例中，上述的焊線藉由楔型焊(wedge bond)製程而連接於第二金屬層。
在本發明的一實施例中，上述的晶片結構更包含一接墊，配置於晶片與第一金屬層之間，接墊的材質包括鋁或鋁合金或銅或銅合金。
在本發明的一實施例中，上述的晶片為功率半導體。
基於上述，在本發明的晶片結構中，接墊上配置了第一金屬層，第一金屬層的材料為鎳或鎳合金而使第一金屬層具較高硬度，如此可藉由第一金屬層吸收打線時的接合力，以避免接墊及位於接墊下方的晶片在打線製程中受到損害。此外，本發明在第一金屬層上配置了用以與焊線接合的第二金屬層，第二金屬層的材料為銅、銅合金、鋁、鋁合金、鈀或鈀合金而使第二金屬層易於與焊線相接合，如此可避免材料為銅或銅合金之焊線與材料為鋁、鋁合金、銅或銅合金之接墊直接相接合而導致其間的介面在高溫工作環境下因化學反應產生缺陷降低可靠度，故可使焊線維持良好的接合強度。
為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。
50‧‧‧基板
100‧‧‧晶片結構
110‧‧‧晶片
120‧‧‧接墊
130‧‧‧第一金屬層
140‧‧‧第二金屬層
150‧‧‧焊線
160‧‧‧接合層
圖1是本發明一實施例的晶片結構的示意圖。
圖2會繪示圖1的晶片結構配置於基板上。
圖1是本發明一實施例的晶片結構的示意圖。請參考圖1，本實施例的晶片結構100包括一晶片110、一第一金屬層130、一第二金屬層140及一焊線150。接墊120配置於晶片110上，第一金屬層130配置於晶片110上，第一金屬層130的材料例如為鎳或鎳合金。第二金屬層140配置於第一金屬層130上，第二金屬層140的材料例如為銅、銅合金、鋁、鋁合金、鈀或鈀合金。焊線150例如藉由楔型焊(wedge bond)製程而連接於第二金屬層140，焊線150的材料例如為銅或銅合金，且焊線150的線徑例如大於102微米以適用於高功率模組裝置。晶片結構100更包括一接墊120，接墊120配置於第一金屬層130與第二金屬層140之間。接墊120的材料例如為鋁、鋁合金、銅或銅合金。
由於配置於接墊120上的第一金屬層130之材料為鎳或鎳合金而使第一金屬層130具較高硬度，故可藉由第一金屬層130吸收打線時的接合力，以避免接墊120或位於接墊120下方的晶片110在打線製程中受到損害。此外，由於配置於第一金屬層130上的第二金屬層140之材料為銅、銅合金、鋁、鋁合金、鈀或鈀合金而使第二金屬層140易於與焊線150相接合，故可避免材料 為銅或銅合金之焊線150與材料為鋁、鋁合金、銅或銅合金之接墊120直接相接合而導致其間的介面在高功率裝置之高溫工作環境下因化學反應產生缺陷降低可靠度，以使焊線150維持良好的接合強度。具體而言，本實施例的晶片結構100藉由上述配置方式可在攝氏-55~125度的溫度循環測試下具有良好的可靠度。
在本實施例中，可將材料為銅的第二金屬層140搭配材料為銅的焊線150、將材料為銅的第二金屬層140搭配材料為銅合金的焊線150、將材料為銅合金的第二金屬層140搭配材料為銅的焊線150、將材料為銅合金的第二金屬層140搭配材料為銅合金的焊線150、將材料為鋁的第二金屬層140搭配材料為銅的焊線150、將材料為鋁的第二金屬層140搭配材料為銅合金的焊線150、將材料為鋁合金的第二金屬層140搭配材料為銅的焊線150、將材料為鋁合金的第二金屬層140搭配材料為銅合金的焊線150、將材料為鈀的第二金屬層140搭配材料為銅的焊線150、將材料為鈀的第二金屬層140搭配材料為銅合金的焊線150、將材料為鈀合金的第二金屬層140搭配材料為銅的焊線150，或將材料為鈀合金的第二金屬層140搭配材料為銅合金的焊線150，本發明不對此加以限制。
在本實施例中，材料為鎳或鎳合金的第一金屬層130除了如上述般藉其較高的硬度來保護其下方的晶片120免於因打線時的接合力而損壞，第一金屬層130亦可視為位於接墊120與第二金屬層140之間的擴散阻絕層(diffusion barrier layer)，用以避免 接墊120與第二金屬層140間的金屬相互擴散。
圖2會繪示圖1的晶片結構配置於基板上。圖1所示的晶片結構100例如應用於車用功率模組，其中晶片結構100適於如圖2所示透過接合層160而配置於車用功率模組的基板50上並藉由焊線150電性連接於基板50上的電性接點或其它電子元件，晶片110例如為絕緣閘雙極電晶體(Insulated Gate Bipolar Transistor，IGBT)、二極體(Diodes)、金氧場效應電晶體(MOSFET)或其它種類的功率半導體，基板50例如為覆銅陶瓷基板(Direct Bonded Copper,DBC)或其它種類的陶瓷基板。在其它實施例中，晶片110可為其它形式的晶片且晶片結構100可應用於其它種類的裝置，本發明不對此加以限制。
綜上所述，在本發明的晶片結構中，接墊上配置了第一金屬層，第一金屬層的材料為鎳或鎳合金而使第一金屬層比接墊具較高硬度，如此可藉由第一金屬層吸收打線時的接合力，以避免位於接墊下方的晶片在打線製程中受到損害。此外，本發明在第一金屬層上配置了用以與焊線接合的第二金屬層，第二金屬層的材料為銅、銅合金、鋁、鋁合金、鈀或鈀合金而使第二金屬層易於與焊線相接合，如此可避免材料為銅或銅合金之焊線與材料為鋁、鋁合金、銅或銅合金之接墊直接相接合而導致其間的介面在高溫工作環境下因化學反應產生缺陷降低可靠度，故可使焊線維持良好的接合強度。
雖然本發明已以實施例揭露如上，然其並非用以限定本 發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為準。
100‧‧‧晶片結構
110‧‧‧晶片
120‧‧‧接墊
130‧‧‧第一金屬層
140‧‧‧第二金屬層
150‧‧‧焊線

Claims (9)

  1. 一種晶片結構，包括：一晶片；一第一金屬層，配置於該晶片上，該第一金屬層的材料包括鎳或鎳合金；一第二金屬層，配置於該第一金屬層上，該第二金屬層的材料包括銅或銅合金；一楔型焊線，藉由楔型焊製程而連接於該第二金屬層，該楔型焊線的材料包括銅或銅合金，其中該第二金屬層的直接接觸該楔型焊線的部位的材料包括銅；以及一接墊，配置於該晶片與該第一金屬層之間，該接墊的材料包括鋁或鋁合金或銅或銅合金。
  2. 如申請專利範圍第1項所述的晶片結構，其中該楔型焊線的線徑大於102微米。
  3. 如申請專利範圍第1項所述的晶片結構，其中該晶片為功率半導體。
  4. 一種晶片結構，包括：一晶片；一第一金屬層，配置於該晶片上，該第一金屬層的材料包括鎳或鎳合金；一第二金屬層，配置於該第一金屬層上，該第二金屬層的材料包括鋁或鋁合金； 一楔型焊線，藉由楔型焊製程而連接於該第二金屬層，該楔型焊線的材料包括銅或銅合金，其中該第二金屬層的直接接觸該楔型焊線的部位的材料包括鋁；以及一接墊，配置於該晶片與該第一金屬層之間，該接墊的材料包括鋁或鋁合金或銅或銅合金。
  5. 如申請專利範圍第4項所述的晶片結構，其中該楔型焊線的線徑大於102微米。
  6. 如申請專利範圍第4項所述的晶片結構，其中該晶片為功率半導體。
  7. 一種晶片結構，包括：一晶片；一第一金屬層，配置於該晶片上，該第一金屬層的材料包括鎳；一第二金屬層，配置於該第一金屬層上，該第二金屬層的材料包括鈀或鈀合金；一楔型焊線，藉由楔型焊製程而連接於該第二金屬層，該焊線的材料包括銅或銅合金，其中該第二金屬層的直接接觸該楔型焊線的部位的材料包括鈀；以及一接墊，配置於該晶片與該第一金屬層之間，該接墊的材料包括鋁或鋁合金或銅或銅合金。
  8. 如申請專利範圍第7項所述的晶片結構，其中該楔型焊線的線徑大於102微米。
  9. 如申請專利範圍第7項所述的晶片結構，其中該晶片為功率半導體。
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