JP6632686B2 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- JP6632686B2 JP6632686B2 JP2018203877A JP2018203877A JP6632686B2 JP 6632686 B2 JP6632686 B2 JP 6632686B2 JP 2018203877 A JP2018203877 A JP 2018203877A JP 2018203877 A JP2018203877 A JP 2018203877A JP 6632686 B2 JP6632686 B2 JP 6632686B2
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Description
まず、本発明の実施の形態1における半導体装置の構成を説明する。図1は、本発明の実施の形態1における半導体装置の主要部を示す概略断面図である。また図2は、本発明の実施の形態における半導体装置の回路基板を示す上面図である。
図11は、本発明の実施の形態2における半導体装置の接合層付近の構造を示す模式的な断面図である。図11において、実施の形態1の図5と同じ符号を付けたものは、同一または対応する構成を示しており、その説明を省略する。本発明の実施の形態1とは、回路基板2の電極22の表面にメタライズ層24を設けて、電極22の材料によらず、金属ナノ粒子を含む焼結接合材料による接合を良好にした構成が相違している。
図12は、本発明の実施の形態3における半導体装置の回路基板を示す上面図と側方断面図である。図12において、実施の形態1の図2と同じ符号を付けたものは、同一または対応する構成を示しており、その説明を省略する。本発明の実施の形態1とは、電極22に形成した凹形状部6の形成パターンが相違している。
図13は、本発明の実施の形態4の半導体装置の接合層付近の構造を示す模式的な断面図である。図13において、実施の形態1の図5と同じ符号を付けたものは、同一または対応する構成を示しており、その説明を省略する。本発明の実施の形態1では電極22に凹形状部6を設けたが、実施の形態4では電極22に凸形状部7を設けた点が相違している。
2 回路基板
21 絶縁板
22 電極
22a、22b 接合領域
3 接合層
3a 第1の領域、3b 第2の領域
33 焼結接合材料
4 第1の半導体素子
5 第2の半導体素子
6 凹形状部
7 凸形状部
Claims (12)
- 絶縁板と、
前記絶縁板上に設けられ、凹部を有する電極と、
前記電極上に設けられた金属結晶粒の焼結体からなる接合層と、
前記接合層を介して前記電極に接合された半導体素子と、
を備え、
前記凹部は、前記電極と前記接合層との接合面の端部に至らない半導体装置。 - 前記凹部は前記電極の表面に形成された部位である請求項1に記載の半導体装置。
- 前記凹部のパターンは、平面視で前記半導体素子の中心に対して対称形である請求項1または2に記載の半導体装置。
- 前記凹部の面積が、平面視で前記接合層の面積の1%以上20%以下の大きさである請求項1から3のいずれか1項に記載の半導体装置。
- 前記金属結晶粒の平均粒径が10nm以上150nm以下である請求項1から4のいずれか1項に記載の半導体装置。
- 前記金属結晶粒の材料はAgである請求項1から5のいずれか1項に記載の半導体装置。
- 前記電極の材料はCuあるいはAlである請求項1から6のいずれか1項に記載の半導体装置。
- 前記電極と前記接合層との間に、前記電極の金属材料とは異なる金属材料からなる金属層を設けた請求項1から7のいずれか1項に記載の半導体装置。
- 前記金属層の材料は、Au、Pt、Pd、Ag、Cuのいずれか1つの金属、あるいは、Au、Pt、Pd、Ag、Cuのいずれか1つを含む合金である請求項8に記載の半導体装置。
- 前記半導体素子はケイ素よりバンドギャップが大きいワイドバンドギャップ半導体材料で形成された請求項1から9のいずれか1項に記載の半導体装置。
- 前記ワイドバンドギャップ半導体材料は、炭化ケイ素、窒化ガリウム、ガリウムヒ素、ダイヤモンドのいずれか1つである請求項10に記載の半導体装置。
- 絶縁板に接合された電極上に、金属ナノ粒子を含む焼結接合材料を介して半導体素子を載置する工程と、
前記絶縁板と前記半導体素子とを加圧しながら加熱し、前記焼結接合材料を焼結させ、前記電極と接する接合層を形成することで、前記電極と前記半導体素子とを接合する工程と、
を備え、
前記電極は焼鈍しながら前記絶縁板に接合され、
前記電極は凹部を有し、
前記凹部は、前記電極と前記接合層との接合面の端部に至らない半導体装置の製造方法。
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JP2019036602A (ja) * | 2017-08-10 | 2019-03-07 | 株式会社豊田中央研究所 | 接合構造体およびその製造方法 |
DE112018005713T5 (de) * | 2017-10-30 | 2020-07-16 | Mitsubishi Electric Corporation | Leistungshalbleitereinheit und herstellungsverfahren für eine leistungshalbleitereinheit |
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