JP2014203861A - 半導体装置および半導体モジュール - Google Patents
半導体装置および半導体モジュール Download PDFInfo
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Abstract
Description
<構成>
本実施の形態における半導体装置100の断面図を図1に示す。半導体装置100は、QFNやSON等のノンリード型のパッケージである。リードフレームはダイパッド1と電極端子5から構成される。ダイパッド1上には、ダイボンド樹脂2を介して、半導体チップ3が接着されている。
本実施の形態における半導体装置100は、ダイパッド1と電極端子5とを備えるリードフレームと、ダイパッド1表面に接着された半導体チップ3と、を備え、底面を除くリードフレームと、半導体チップ3とは封止樹脂4により封止され、ダイパッド1表面と半導体チップ3との接着界面には、凹凸が形成されていることを特徴とする。
本実施の形態における半導体装置200の断面図を図2に示す。半導体装置200において、ダイパッド1と半導体チップ3とのダイボンド樹脂2による接着界面には、凹凸が形成されている。より具体的には、接着界面の凹凸は、半導体チップ3の下面に凹凸部3aが形成されることによって、形成される。
本実施の形態における半導体装置200において、半導体チップ3に凹凸部3aが形成されることにより、接着界面の凹凸が形成されていることを特徴とする。
本実施の形態における半導体装置300の断面図を図3に示す。半導体装置300において、ダイパッド1と半導体チップ3とは、ダイボンド樹脂2により部分的に接着されている。その他の構成は実施の形態1と同じであるため、説明を省略する。
本実施の形態における半導体装置300は、ダイパッド1と電極端子5とを備えるリードフレームと、ダイパッド1表面に接着された半導体チップ3と、を備え、底面を除くリードフレームと、半導体チップ3とは封止樹脂4により封止され、ダイパッド1と半導体チップ3とは、部分的に接着されていることを特徴とする。
<構成>
本実施の形態における半導体装置400の断面図と平面図を図4(a),(b)にそれぞれ示す。本実施の形態における半導体装置400には、実施の形態1における半導体装置100(図1)に対して、さらに、ダイパッド1表面に、平面視で半導体チップ3を囲む突起1bが形成されている。その他の構成は実施の形態1(図1)と同じであるため、説明を省略する。
本実施の形態における半導体装置400において、ダイパッド1表面には、平面視で半導体チップ3を囲む突起1bが形成されていることを特徴とする。
本実施の形態における半導体装置500の断面図と平面図を図5(a),(b)にそれぞれ示す。本実施の形態における半導体装置500には、実施の形態4(図4(a),(b))と同様に、ダイパッド1表面に、平面視で半導体チップ3を囲む突起1bが形成されている。突起1bはワイヤボンディングにより形成される。その他の構成は実施の形態4(図4(a),(b))と同じであるため、説明を省略する。
本実施の形態における半導体装置500において、突起1bは、ワイヤボンドによるワイヤにより形成されることを特徴とする。
本実施の形態における半導体装置600の断面図を図6に示す。本実施の形態における半導体装置600には、実施の形態4(図4(a),(b))と同様に、ダイパッド1表面に、平面視で半導体チップ3を囲む突起1bが形成されている。突起1bは、ダイパッド1の表面を削ることにより形成される。その他の構成は実施の形態4(図4(a),(b))と同じであるため、説明を省略する。
本実施の形態における半導体装置600において、突起1bは、ダイパッド1の表面を削ることにより形成されることを特徴とする。
<構成>
本実施の形態における半導体装置700の断面図を図7に示す。本実施の形態における半導体装置700には、実施の形態1における半導体装置100(図1)に対して、さらに、ダイパッド1底面に、凹部1cが形成される。その他の構成は実施の形態1(図1)と同じであるため、説明を省略する。
本実施の形態における半導体装置700において、ダイパッドの底面には凹部1cが形成されており、凹部1cの少なくとも一部は、半導体チップ3と平面視で重なっていることを特徴とする。
<構成>
本実施の形態における半導体装置800の断面図を図8に示す。本実施の形態における半導体装置800は、複数の半導体チップ3を備える。また、リードフレームは、複数のダイパッド1を備える。半導体チップ3とダイパッド1の各々は、実施の形態1(図1)と同様にダイボンド樹脂2により接着されている。その他の構成は実施の形態1と同じため、説明を省略する。
本実施の形態における半導体装置800において、半導体チップ3は複数であることを特徴とする。従って、各半導体チップ3において剥離、クラック等の発生を抑制可能なため、複数の半導体チップ3を隣接して配置しても、信頼性を維持することが可能である。よって、動作温度の異なる半導体チップを近接して配置することが可能となり、設計の自由度が向上する。
<構成>
本実施の形態における半導体モジュール900の断面図を図9に示す。半導体モジュール900は、実施の形態1における半導体装置100と、パワー半導体チップ24とを備える。半導体装置100の電極端子5、はんだ11を介して制御基板13のランド12に接続されている。
本実施の形態における半導体モジュール900は、半導体装置100と、パワー半導体チップ24と、を備える。
Claims (15)
- ダイパッドと電極端子とを備えるリードフレームと、
前記ダイパッド表面に接着された半導体チップと、
を備え、
底面を除く前記リードフレームと、前記半導体チップとは封止樹脂により封止され、
前記ダイパッド表面と前記半導体チップとの接着界面には、凹凸が形成されていることを特徴とする、
半導体装置。 - 前記ダイパッド表面に凹凸部が形成されることにより、前記接着界面の凹凸が形成されていることを特徴とする、
請求項1に記載の半導体装置。 - 前記半導体チップに凹凸部が形成されることにより、前記接着界面の凹凸が形成されていることを特徴とする、
請求項1に記載の半導体装置。 - ダイパッドと電極端子とを備えるリードフレームと、
前記ダイパッド表面に接着された半導体チップと、
を備え、
底面を除く前記リードフレームと、前記半導体チップとは封止樹脂により封止され、
前記ダイパッドと前記半導体チップとは、部分的に接着されていることを特徴とする、
半導体装置。 - 前記ダイパッド表面には、平面視で前記半導体チップを囲む突起が形成されていることを特徴とする、
請求項1〜4のいずれかに記載の半導体装置。 - 前記突起と、前記ダイパッドとは別部材により形成されることを特徴とする、
請求項5に記載の半導体装置。 - 前記突起は、ワイヤボンドによるワイヤにより形成されることを特徴とする、
請求項5に記載の半導体装置。 - 前記突起は、ワイヤボンドによるアルミワイヤである、
請求項7に記載の半導体装置。 - 前記突起は、前記ダイパッドの表面を削ることにより形成されることを特徴とする、
請求項5に記載の半導体装置。 - 前記ダイパッドの底面には凹部が形成されており、
前記凹部の少なくとも一部は、前記半導体チップと平面視で重なっていることを特徴とする、
請求項1〜9のいずれかに記載の半導体装置。 - 前記ダイパッドの厚みよりも、前記半導体チップの厚みが小さいことを特徴とする、請求項1〜10のいずれかに記載の半導体装置。
- 前記半導体チップは、ワイドバンドギャップ半導体を含むことを特徴とする、
請求項1〜11のいずれかに記載の半導体装置。 - 前記半導体チップは複数であることを特徴とする、
請求項1〜12のいずれかに記載の半導体装置。 - 請求項1〜13のいずれかに記載の半導体装置と、
パワー半導体チップと、
を備える、
半導体モジュール。 - 前記パワー半導体チップは、ワイドバンドギャップ半導体を含むことを特徴とする、
請求項14に記載の半導体モジュール。
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