JP7238985B2 - 半導体装置及び半導体装置の製造方法 - Google Patents
半導体装置及び半導体装置の製造方法 Download PDFInfo
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- JP7238985B2 JP7238985B2 JP2021527615A JP2021527615A JP7238985B2 JP 7238985 B2 JP7238985 B2 JP 7238985B2 JP 2021527615 A JP2021527615 A JP 2021527615A JP 2021527615 A JP2021527615 A JP 2021527615A JP 7238985 B2 JP7238985 B2 JP 7238985B2
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- metal layer
- sintered metal
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- metal plate
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Description
本発明の半導体装置は、表面に金属層を有する第1半導体チップと、金属層に対向して配置された第1配線部材と、金属層と第1配線部材との間に配置され、引張強度が高い複数の領域および引張強度が低い複数の領域を備えた焼結金属層と、焼結金属層の内部に配置された金属材料と、を備え、焼結金属層の一部の引張強度の低い領域の引張強度は、第1半導体チップの金属層の引張強度より低い。本発明の第1実施形態に係る半導体装置は、図1に示すように、半導体チップ(第1半導体チップ)1、接合部2,2a、絶縁回路基板8、及び配線部材7を備える。絶縁回路基板8は、絶縁板81、絶縁板81の上面にパターニングされた導体層(配線層)82a、82b、及び絶縁板81の下面に設けられた導体層(放熱層)83を有する。半導体チップ1の上面は、接合部2を介して配線部材7の一端に電気的に接続される。半導体チップ1の下面は、接合部2aを介して絶縁回路基板8の導体層82aに電気的に接続される。配線部材7の他端が、接合部6を介して絶縁回路基板8の導体層82bに電気的に接続される。絶縁回路基板8の導体層83は、接合部9を介して放熱ベース10に接続される。
第1焼結金属層4aは、引張強度の異なる複数の領域を有する。第2焼結金属層4bは、引張強度の異なる複数の領域を有する。金属板3(金属材料)は、第1焼結金属層4aの一部の引張強度が高い領域と第2焼結金属層4bの一部の引張強度が高い領域との間に配置されている。
焼結金属層(4a,4b)は、金属材料3の第1半導体チップ1側に配置された第1焼結金属層4aと、金属材料3の第1配線部材7側に配置された第2焼結金属層4bとを有し、金属材料3は、下面に複数の第1溝部15a、上面に複数の第2溝部15bを有する第1金属板3であって、第1溝部15aおよび第2溝部15bが形成されていない平面部3eの領域がある。
第2実施形態に係る半導体装置は、図24に示すように、第1実施形態に係る半導体装置は、図24に示すように、半導体チップ1、半導体チップ1と絶縁回路基板8とを接合する接合部2c、及び半導体チップ1と配線部材7とを接合する接合部2bを備える。図24中のD部分の拡大図である図25に示すように、接合部2bは、電極層(1B,1C)と配線部材7との間に配置される。接合部2bは、外側めっき金属層1Cの上に配置された焼結金属層4e、配線部材7の下に配置された焼結金属層4f、及び焼結金属層4e、4fの間に配置された金属板3dを備える。金属板3dは、複数の第1溝部15a及び複数の第2溝部15bを、下面及び上面にそれぞれ独立して有する。複数の第1溝部15aは、金属板3dの半導体チップ1に面する側に設けられる。複数の第2溝部15bは、金属板3dの配線部材7に面する側に設けられる。第2実施形態は、複数の第1溝部15a及び複数の第2溝部15bを、下面及び上面にそれぞれ独立して有する金属板3dを有する点が第1実施形態と異なる。他の構成は第1実施形態と同様であるので重複する記載は省略する。
本発明は上記の開示した実施形態によって説明したが、この開示の一部をなす論述及び図面は、本発明を限定するものであると理解すべきではない。本発明の明細書や図面の開示から当業者には様々な代替実施形態、実施例及び運用技術が明らかになると考えられるべきである。又、上記の実施形態及び各変形例において説明される各構成を任意に応用した構成等、本発明はここでは記載していない様々な実施形態等を含むことは勿論である。したがって、本発明の技術的範囲は上記の例示的説明から妥当な、特許請求の範囲に係る発明特定事項によってのみ定められるものである。
1A…半導体層
1B,1D…電極金属層
1C,1E…外側めっき金属層
2,2a,2b,2c,6,9,22,22a,26…接合部
3,3a,3b,3c,3d,23…金属板
3e…平面部
4a,4b,4c,4d,4e,4f,24a,24b…焼結金属層
5,5a,5b,5c…貫通孔
7,27…配線部材
8…絶縁回路基板10…放熱ベース
15a,55a…第1溝部
15b,55b…第2溝部
31…プレス型
32…緩衝部材
81…絶縁板
82a,82b,82c…導体層(配線層)
83…導体層(放熱層)
Claims (13)
- 表面に金属層を有する第1半導体チップと、
前記金属層に対向して配置された第1配線部材と、
前記金属層と前記第1配線部材との間に配置され、前記第1半導体チップ側に配置された第1焼結金属層、および前記第1配線部材側に配置された第2焼結金属層を有し、前記第1焼結金属層及び前記第2焼結金属層のそれぞれに、平面視で、引張強度が高い複数の第1の領域および前記第1の領域に囲まれて局在する引張強度が低い複数の第2の領域を備えた焼結金属層と、
前記第1及び第2焼結金属層の間に配置され、下面に前記第2の領域に接する複数の第1溝部、上面に前記第2の領域に接する複数の第2溝部を有し、前記第1の領域に接し前記第1溝部および前記第2溝部が形成されていない平面部の領域がある第1金属板と、
第2半導体チップと、
前記第2半導体チップの上方に配置され、下面に複数の第3溝部、上面に複数の第4溝部を有する第2金属板と、
前記第2金属板の上方に配置された第2配線部材と、
前記複数の第3溝部を埋めるように前記第2半導体チップと前記第2金属板との間に配置された第3焼結金属層と、
前記複数の第4溝部を埋めるように前記第2金属板と前記第2配線部材との間に配置された第4焼結金属層と、
前記第1半導体チップおよび前記第2半導体チップの下方に配置された配線層と、
を備え、
前記第1の領域の引張強度は、前記第1半導体チップの前記金属層の引張強度以下であり、
前記第1配線部材及び前記第2配線部材の上面の高さのレベルが同一であり、
前記第1金属板及び前記第2金属板の厚さが異なることを特徴とする半導体装置。 - 前記複数の第1溝部及び前記複数の第2溝部は、それぞれ互いに接続した複数の貫通孔をなすことを特徴とする請求項1に記載の半導体装置。
- 前記複数の第1溝部及び第2溝部のそれぞれの領域における前記第1焼結金属層及び第2焼結金属層の焼結密度は、72%以上、78%以下の範囲であることを特徴とする請求項1又は2に記載の半導体装置。
- 前記第1焼結金属層の焼結密度は、前記複数の第1溝部の領域に比べて前記第1金属板の前記下面の領域の方が高く、
前記第2焼結金属層の焼結密度は、前記複数の第2溝部の領域に比べて前記第1金属板の前記上面の領域の方が高いことを特徴とする請求項1~3のいずれか1項に記載の半導体装置。 - 前記複数の第1溝部の領域の前記第1焼結金属層の焼結密度は、前記複数の第2溝部の領域の前記第2焼結金属層の焼結密度に比べて高いことを特徴とする請求項1~4のいずれか1項に記載の半導体装置。
- 平面パターンにおいて、前記複数の第1溝部及び前記第2溝部のそれぞれの占有面積が前記第1金属板の表面積に対して25%以上75%以下であることを特徴とする請求項1~5のいずれか1項に記載の半導体装置。
- 平面パターンにおいて、前記複数の第1溝部の占有面積が前記複数の第2溝部の占有面積に比べて小さいことを特徴とする請求項1~6のいずれか1項に記載の半導体装置。
- 前記第1金属板の厚さが、前記第1半導体チップの表面から前記第1溝部の底部までの前記第1焼結金属層の厚さの0%より大きく63%以下の範囲であることを特徴とする請求項1~7のいずれか1項に記載の半導体装置。
- 前記第1半導体チップの上面から前記第1溝部の底部までの前記第1焼結金属層の厚さが、前記第1配線部材の下面から前記第2溝部の底部までの前記第2焼結金属層の厚さに比べて薄いことを特徴とする請求項1~8のいずれか1項に記載の半導体装置。
- 前記第1半導体チップの下方に配置され、上面に複数の第5溝部、下面に複数の第6溝部を有する第3金属板と、
前記第3金属板の下方に配置され、上面に前記配線層を有する絶縁回路基板と、
前記複数の第5溝部を埋めるように前記第1半導体チップと前記第3金属板との間に配置された第5焼結金属層と、
前記複数の第6溝部を埋めるように前記第3金属板と前記配線層との間に配置された第6焼結金属層と
を更に備えることを特徴とする請求項1~9のいずれか1項に記載の半導体装置。 - 絶縁回路基板の上面に配置された配線層の上に第1半導体チップを接合するステップと、
前記第1半導体チップの上面に焼結金属ペーストを塗布して乾燥させ、第1焼結金属層を積層するステップと、
下面に複数の第1溝部、上面に複数の第2溝部を有する第1金属板を、前記第1焼結金属層の上に前記第1金属板の前記下面が接するように配置するステップと、
前記第1金属板の前記上面に焼結金属ペーストを塗布して乾燥させ、第2焼結金属層を積層するステップと、
前記第2焼結金属層の上に第1配線部材を配置するステップと、
前記第1焼結金属層及び第2焼結金属層を加熱しながら加圧して、前記第1焼結金属層を前記複数の第1溝部に充填するように前記第1金属板の前記下面と前記第1半導体チップとの間で接合させ、且つ、前記第2焼結金属層を前記複数の第2溝部に充填するように前記第1金属板の前記上面と前記第1配線部材との間で接合させるステップと
を備え、更に、
前記絶縁回路基板の上に接合された第2半導体チップの上面に第3焼結金属層を形成するステップと、
下面に複数の第3溝部、上面に複数の第4溝部を有する第2金属板を、前記第3焼結金属層の上に前記第2金属板の前記下面が接するように配置するステップと、
前記第2金属板の前記上面に第4焼結金属層を形成するステップと、
前記第4焼結金属層の上に第2配線部材を配置するステップと、
前記第3焼結金属層及び第4焼結金属層を加熱しながら加圧して、前記第3焼結金属層を前記複数の第3溝部に充填するように前記第2金属板の前記下面と前記第2半導体チップとの間で接合させ、且つ、前記第4焼結金属層を前記複数の第4溝部に充填するように前記第2金属板の前記上面と前記第2配線部材との間で接合させるステップと
を備え、
前記第3焼結金属層及び第4焼結金属層の前記加圧は、前記第1焼結金属層及び第2焼結金属層の前記加圧と同時に実施され、
前記第1金属板及び前記第2金属板の厚さが異なり、且つ、前記第1配線部材及び前記第2配線部材の上面の高さのレベルが同一であることを特徴とする半導体装置の製造方法。 - 前記複数の第1溝部及び前記複数の第2溝部は、それぞれ互いに接続した複数の貫通孔をなすことを特徴とする請求項11に記載の半導体装置の製造方法。
- 前記第1焼結金属層及び第2焼結金属層の前記加圧は、前記焼結金属ペーストを乾燥させた後の前記第1焼結金属層及び第2焼結金属層の供給厚さに対して10%以上、20%以下の範囲の圧縮率で実施されることを特徴とする請求項11又は12に記載の半導体装置の製造方法。
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Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10349477A1 (de) | 2003-10-21 | 2005-02-24 | Infineon Technologies Ag | Halbleiterbauteile mit einem Gehäuse und mit einem Halbleiterchip, sowie Verfahren zur Herstellung desselben |
JP2006202586A (ja) | 2005-01-20 | 2006-08-03 | Nissan Motor Co Ltd | 接合方法及び接合構造 |
JP2006269682A (ja) | 2005-03-23 | 2006-10-05 | Fuji Electric Holdings Co Ltd | 半導体装置およびその製造方法 |
JP2011192695A (ja) | 2010-03-12 | 2011-09-29 | Mitsubishi Electric Corp | 半導体装置 |
JP2011238779A (ja) | 2010-05-11 | 2011-11-24 | Mitsubishi Electric Corp | 導電性接合構造体、これを用いた半導体装置および半導体装置の製造方法 |
JP2015216160A (ja) | 2014-05-08 | 2015-12-03 | 三菱電機株式会社 | 電力用半導体装置および電力用半導体装置の製造方法 |
WO2017002793A1 (ja) | 2015-07-01 | 2017-01-05 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP2018026417A (ja) | 2016-08-09 | 2018-02-15 | 三菱電機株式会社 | 電力用半導体装置 |
JP2018110149A (ja) | 2016-12-28 | 2018-07-12 | 三菱電機株式会社 | 半導体装置の製造方法 |
DE102017206925A1 (de) | 2017-04-25 | 2018-10-25 | Siemens Aktiengesellschaft | Verfahren zum Erzeugen einer Diffusionslötverbindung |
JP2018195724A (ja) | 2017-05-18 | 2018-12-06 | 三菱電機株式会社 | パワーモジュールおよびその製造方法ならびに電力変換装置 |
EP3416186A1 (en) | 2017-06-14 | 2018-12-19 | Infineon Technologies AG | Semiconductor substrate arrangement with a connection layer with regions of different porosity and method for producing the same |
JP2019212759A (ja) | 2018-06-05 | 2019-12-12 | 新光電気工業株式会社 | 半導体装置及び半導体装置の製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5240021B2 (ja) | 2009-04-03 | 2013-07-17 | 日産自動車株式会社 | 半導体装置及びその製造方法 |
JP2010251457A (ja) | 2009-04-14 | 2010-11-04 | Nissan Motor Co Ltd | 半導体装置及びその製造方法 |
JP2012138470A (ja) | 2010-12-27 | 2012-07-19 | Mitsubishi Electric Corp | 半導体素子、半導体装置および半導体装置の製造方法 |
US8987879B2 (en) | 2011-07-06 | 2015-03-24 | Infineon Technologies Ag | Semiconductor device including a contact clip having protrusions and manufacturing thereof |
JP5880300B2 (ja) | 2012-06-14 | 2016-03-08 | 日立化成株式会社 | 接着剤組成物及びそれを用いた半導体装置 |
WO2016152258A1 (ja) * | 2015-03-23 | 2016-09-29 | 株式会社日立製作所 | 半導体装置 |
WO2016157866A1 (ja) | 2015-03-30 | 2016-10-06 | 日本ケミコン株式会社 | コンデンサおよびその製造方法 |
US9620466B1 (en) | 2015-11-30 | 2017-04-11 | Infineon Technologies Ag | Method of manufacturing an electronic device having a contact pad with partially sealed pores |
-
2020
- 2020-06-08 WO PCT/JP2020/022499 patent/WO2020255773A1/ja active Application Filing
- 2020-06-08 JP JP2021527615A patent/JP7238985B2/ja active Active
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Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10349477A1 (de) | 2003-10-21 | 2005-02-24 | Infineon Technologies Ag | Halbleiterbauteile mit einem Gehäuse und mit einem Halbleiterchip, sowie Verfahren zur Herstellung desselben |
JP2006202586A (ja) | 2005-01-20 | 2006-08-03 | Nissan Motor Co Ltd | 接合方法及び接合構造 |
JP2006269682A (ja) | 2005-03-23 | 2006-10-05 | Fuji Electric Holdings Co Ltd | 半導体装置およびその製造方法 |
JP2011192695A (ja) | 2010-03-12 | 2011-09-29 | Mitsubishi Electric Corp | 半導体装置 |
JP2011238779A (ja) | 2010-05-11 | 2011-11-24 | Mitsubishi Electric Corp | 導電性接合構造体、これを用いた半導体装置および半導体装置の製造方法 |
JP2015216160A (ja) | 2014-05-08 | 2015-12-03 | 三菱電機株式会社 | 電力用半導体装置および電力用半導体装置の製造方法 |
WO2017002793A1 (ja) | 2015-07-01 | 2017-01-05 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP2018026417A (ja) | 2016-08-09 | 2018-02-15 | 三菱電機株式会社 | 電力用半導体装置 |
JP2018110149A (ja) | 2016-12-28 | 2018-07-12 | 三菱電機株式会社 | 半導体装置の製造方法 |
DE102017206925A1 (de) | 2017-04-25 | 2018-10-25 | Siemens Aktiengesellschaft | Verfahren zum Erzeugen einer Diffusionslötverbindung |
JP2018195724A (ja) | 2017-05-18 | 2018-12-06 | 三菱電機株式会社 | パワーモジュールおよびその製造方法ならびに電力変換装置 |
EP3416186A1 (en) | 2017-06-14 | 2018-12-19 | Infineon Technologies AG | Semiconductor substrate arrangement with a connection layer with regions of different porosity and method for producing the same |
JP2019212759A (ja) | 2018-06-05 | 2019-12-12 | 新光電気工業株式会社 | 半導体装置及び半導体装置の製造方法 |
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