CN105405824B - 预制结构及其形成方法、和焊接半导体芯片布置的方法 - Google Patents

预制结构及其形成方法、和焊接半导体芯片布置的方法 Download PDF

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CN105405824B
CN105405824B CN201510554070.6A CN201510554070A CN105405824B CN 105405824 B CN105405824 B CN 105405824B CN 201510554070 A CN201510554070 A CN 201510554070A CN 105405824 B CN105405824 B CN 105405824B
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carbon fiber
composite sheet
fiber composite
precast construction
semiconductor chip
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CN105405824A (zh
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F.克勒纳
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Infineon Technologies AG
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Infineon Technologies AG
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Abstract

本发明涉及预制结构及其形成方法、和焊接半导体芯片布置的方法。用于焊接半导体芯片布置的预制结构包括碳纤维复合片以及在碳纤维复合片之上形成的焊料层。

Description

预制结构及其形成方法、和焊接半导体芯片布置的方法
技术领域
实施例涉及焊接半导体芯片并且特别涉及用于焊接半导体芯片布置的预制结构、用于形成用于半导体芯片布置的预制结构的方法、以及用于焊接半导体芯片布置的方法。
背景技术
在硅芯片和引线框架之间的温度应力可能由焊料连接引起。利用软焊料，只要焊料是液体，在芯片和衬底之间的焊料合金焊盘可以允许芯片变形，这最小化它的内部温度应力。然而利用扩散焊料，可能要求其它方式来维持芯片的平坦形状，这可能除了温度应力之外生成机械力。当与软焊料相比较时，这些应力相当大并且可能永久驻留在芯片的个别层中。
发明内容
一些实施例涉及用于焊接半导体芯片布置的预制结构。预制结构包含碳纤维复合片和在碳纤维复合片之上形成的焊料层。
一些实施例涉及用于形成用于半导体芯片布置的预制结构的方法。方法包含热压碳纤维和补充材料以得到碳纤维复合片。方法进一步包含基于碳纤维复合片形成预制结构。
一些实施例涉及用于焊接半导体芯片布置的方法。方法包含将预制结构布置在半导体芯片和载体结构之间。预制结构的横向侧的表面积小于半导体芯片的横向侧的表面积。方法进一步包含焊接半导体芯片布置。
附图说明
下面仅作为示例并且参考附图将描述设备和/或方法的一些实施例，在附图中：
图1示出预制结构的示意图解；
图2示出进一步预制结构的示意图解；
图3示出半导体芯片布置的示意图解；
图4示出用于形成预制结构的方法的流程图；
图5A示出用于焊接半导体芯片布置的方法的流程图；
图5B示出在扩散焊接之前的半导体芯片布置的示意图解；
图5C示出进一步半导体芯片布置的示意图解。
具体实施方式
现在参考在其中图解一些示例实施例的附图将更完全地描述各种示例实施例。在附图中，为了清楚起见可以放大线、层和/或区的厚度。
所以，尽管示例实施例能够是各种修改和替换形式，但是其实施例作为示例在附图中示出并且将在本文中详细描述。然而应该理解不意图将示例实施例限制到公开的特定形式，而是相反地示例实施例要覆盖落在公开内容的范围内的所有修改、等价物、和替换方式。贯穿附图的描述，相似的数字指的是相似或类似的元件。
将理解当元件被称为被“连接”或“耦合”到另一个元件时，它能够被直接连接或耦合到另一个元件或可以存在居间元件。相比之下，当元件被称为被“直接连接”或“直接耦合”到另一个元件时，不存在居间元件。用来描述元件之间的关系的其它词语应该以相似的方式（例如，“在…之间”对“直接在…之间”、“相邻”对“直接相邻”等等）来解释。
在本文中使用的术语仅为了描述特定实施例的目的并且不意图是示例实施例的限制。如在本文中使用的，单数形式“一（a）”、“一个（an）”和“该（the）”也意图包含复数形式，除非上下文另外清楚地指示。将进一步理解当在本文中使用时术语“包括（comprise）”、“包括着（comprising）”、“包含（include）”、和/或“包含着（including）”指定陈述的特征、整数、步骤、操作、元件和/或部件的存在，但是不排除一个或多个其它特征、整数、步骤、操作、元件、部件和/或其群组的存在或添加。
除非另外限定，在本文中使用的所有术语（包含技术和科学术语）具有与示例实施例所属的领域的普通技术人员通常理解的相同的含义。将进一步理解术语（例如，在常用字典中限定的那些）应该被解释为具有与它们在相关领域的上下文中的含义一致的含义，并且将不被以理想化或过度正式的意思来解释，除非在本文中明确地这样限定。
图1示出依据实施例的用于焊接半导体芯片布置的预制结构100的示意图解。
预制结构100包含碳纤维复合片102和在碳纤维复合片102之上形成的焊料层104。
由于预制结构中包含碳纤维复合片和焊料层，可以减少由用于焊接半导体芯片布置的焊料生成的温度应力。比如，由于碳纤维复合片的热膨胀系数与半导体芯片布置的半导体芯片的热膨胀系数的相似性，可以减少温度应力。此外，包含碳纤维复合片的预制结构可以提供到半导体芯片布置的导电和导热连接两者。
要被焊接的半导体芯片布置可以包含半导体芯片或半导体管芯，该半导体芯片或半导体管芯比如可以包含半导体衬底或晶片的部分。比如，半导体芯片（或管芯）可以从包括多个半导体芯片（或管芯）的半导体衬底或晶片被切块或个别化，从而半导体芯片布置具有预限定的横向顶和底侧或表面，每个具有预限定的横向表面积。比如，半导体芯片的横向表面积可以是0.5 mm×0.5 mm或更大，例如1 mm×1 mm或更大，或例如10 mm×10 mm或更大。半导体芯片布置的半导体芯片比如可以包含在半导体芯片中形成的一个或多个有源或无源电元件或器件（例如，晶体管、二极管、或晶闸管）。半导体芯片可以包含半导体衬底，该半导体衬底比如可以是基于硅的半导体衬底、基于碳化硅的半导体衬底、基于砷化镓的半导体衬底或基于氮化镓的半导体衬底。
半导体芯片布置也可以包含载体结构（例如，引线框架、板、或电路板），该载体结构可以经由预制结构被焊接到半导体芯片。比如，引线框架可以是铜合金或铜引线框架。
预制结构100可以是预形成或预制作的结构，其比如可以具有一个或多个预确定的横向尺度。比如，预制结构可以具有下述厚度：该厚度位于200 μm到400 μm之间，例如在250 μm到400 μm之间，或例如在275 μm到350 μm之间。比如，预制结构可以具有预限定的横向顶和底侧，该预限定的横向顶和底侧具有预限定的横向表面积。取决于应用，可以选择预制结构100的横向侧或表面的表面积。在一些示例中，预制结构100的横向侧或表面的表面积可以大约等于或大于要被焊接的半导体芯片布置的半导体芯片的横向侧或表面的表面积。在其它示例中，预制结构100的横向侧或表面的表面积可以小于要被焊接的半导体芯片布置的半导体芯片的横向侧或表面的表面积。
碳纤维复合片102可以包含热压以形成碳纤维复合片102的碳纤维以及铜和/或铬的混合物。预制结构100的碳纤维复合片102可以是热压的复合片并且比如可以具有第一横向侧或表面和第二横向侧或表面。比如，第一横向侧和第二横向侧的横向长度或宽度可以大于碳纤维复合片的厚度。比如，第一横向侧和第二横向侧的横向长度或宽度可以是碳纤维复合片的厚度的10倍或例如100倍或例如500倍。碳纤维复合片可以具有下述厚度：该厚度位于50 μm到250 μm之间，例如在50 μm到200 μm之间，或例如在100 μm到175 μm之间。比如，碳纤维复合片可以包含50%到80%之间例如55%到75%之间或例如60%到70%之间的铜或铬。
预制结构100比如可以包含用于焊接半导体芯片布置的焊料材料层。比如，焊料层104可以包含金-锡或银-锡。半导体芯片比如可以经由预制结构（例如，经由预制结构的焊料层104）被扩散焊接到引线框架。焊料层104可以被（例如，直接地或间接地）沉积在碳纤维复合片102上。
通过（例如在沉积焊料层之前）执行碳纤维复合片102的一个或多个抛光工艺，在碳纤维复合片102之上形成的焊料层104的表面粗糙度比如可以小于2 μm，或例如小于1.5μm，或例如小于1 μm。可选地或额外地，焊料层104比如可以被沉积在要被焊接的半导体芯片的侧之上或在要被焊接的引线框架的侧之上，而不是被沉积在碳纤维复合片102之上或除了被沉积在碳纤维复合片102之上之外。
由于使用包含用于焊接半导体芯片布置的碳纤维复合片的预制结构，比如可以减少由焊料生成的温度应力。此外，比如这样的预制结构可以在半导体芯片布置和引线框架之间提供导电和导热连接（例如，大于大约100 W/mK，或例如大于大约1000 W/mK，或例如大于大约2000 W/mK）两者，并且可以被用于在半导体芯片和引线框架之间承载或传递电信号。
图2示出依据实施例的预制结构200的示意图解。预制结构200可以类似于关于图1描述的预制结构。
预制结构200可以包含碳纤维复合片102，该碳纤维复合片102可以具有第一横向侧205或表面和第二横向侧206或表面。预制结构200可以包含在碳纤维片102和焊料层之间形成的导电层203a。
比如，导电层203a可以在碳纤维复合片102的第一横向侧205处在碳纤维复合片102和焊料层104a之间形成。比如，导电层203a可以在碳纤维复合片102的第一横向侧205之上或直接在碳纤维复合片102的第一横向侧205上形成，并且第一焊料层104a可以在第一导电层203a之上或直接在第一导电层203a上形成。
可选地或额外地，第二导电层203b可以在碳纤维复合片102的第二横向侧206处在碳纤维复合片102和第二焊料层104b之间形成。第二横向侧206可以与碳纤维复合片的第一横向侧205相对。比如，第二导电层203b可以在碳纤维复合片102的第二横向侧206之上或直接在碳纤维复合片102的第二横向侧206上形成，并且第二焊料层104b可以在第二导电层203b之上或直接在第二导电层203b上形成。
可以可能的是导电层可以包含导电层堆叠中的一个或多个居间导电层。导电层可以至少部分、基本上或完全覆盖碳纤维复合片的第一横向侧205和/或第二横向侧206。
焊料层（例如，分别104a或104b）可以至少部分或完全覆盖导电层（例如，分别203a或203b）。可以包含金-锡或银-锡的焊料层如果必要可以包含一个或多个居间焊料层。比如，在导电层之上（或直接在导电层上）形成的第一居间层锡可以具有下述厚度：该厚度位于1 μm到2 μm之间或例如在1.2 μm到1.8 μm之间。由于它们的高粗糙度（均方根r.m.s 0.5μm的最佳情形），小于1 μm的厚度可能导致引线框架的不平坦表面被CMP抛光表面取代。大于2 μm的厚度可能导致更长的焊接时间和可能难以控制的额外效应。
在居间层锡之上（或直接在居间层锡上）形成的可以保护免于侵蚀的进一步居间层银或金可以具有下述厚度：该厚度位于0.5 μm到5 μm之间，或例如在0.5 μm到1 μm之间。预制结构的表面粗糙度比如可以小于焊料层例如锡层的厚度。
预制结构200的横向尺寸（在焊接之前）可以与半导体芯片的横向尺寸相比较来选择。比如，预制结构200的横向尺寸可以等于半导体芯片的横向尺寸的+/- 10%、或例如+/-5%、或例如+/- 2%，或在半导体芯片的横向尺寸的+/- 10%、或例如+/- 5%、或例如+/- 2%内。比如，预制结构200的一个（或每个）横向侧的长度可以是例如比半导体芯片的一个（或每个）横向侧的长度更大或更小大约10 μm或例如大约20 μm或例如大约50 μm。
结合以上或以下描述的实施例（例如，预制结构、半导体芯片布置、碳纤维复合片、导电层、碳纤维复合片的横向侧和焊料层）提及更多细节和方面。在图2中示出的实施例可以包括一个或多个可选额外特征，该一个或多个可选额外特征对应于结合以上（例如，图1）或以下（例如，图3到5C）描述的一个或多个实施例或提出的概念而提及的一个或多个方面。
图3示出依据实施例的半导体芯片布置300。
半导体芯片布置300包含半导体芯片307和引线框架308。半导体芯片布置300进一步包含居间焊料层309，该居间焊料层309包含碳纤维。半导体芯片通过居间焊料层309电连接到引线框架。
由于半导体芯片和引线框架之间的包含碳纤维的居间焊料层的实施，可以减少半导体芯片布置中的温度应力。比如，可以减少半导体芯片衬底中、或半导体芯片的金属或绝缘层中、或连接到半导体芯片的引线框架中的温度应力。
居间焊料层309可以类似于关于图1或2描述的预制结构，并且可以包含关于预制结构已经描述的特征中的一个或多个或所有。
半导体芯片布置的半导体芯片比如可以包含芯片横向前侧312或表面和芯片横向背侧311或表面。半导体芯片307的厚度，例如芯片横向前侧312或表面和芯片横向背侧311或表面之间的垂直距离，可以位于40 μm到大约800 μm之间，或例如在40 μm到大约200 μm之间，或例如在40 μm到大约150 μm之间。
芯片的前侧312或表面可以是朝向衬底的表面的顶上的金属层、绝缘层和/或钝化层的衬底的表面，或这些层中的一个的表面。比如，更复杂的结构可以被定位在芯片前侧312处而不是芯片背侧311处。比如，在功率半导体芯片中，芯片前侧312可以是在此处形成第一源极/漏极区和栅极区的芯片的侧。比如，铜金属层（例如，功率铜层）可以在芯片前侧312之上形成。比如，半导体芯片可以包含铜金属层例如功率铜，该铜金属层比如可以是大约7 μm厚、或例如3μm到10 μm，或例如在5 μm到10 μm厚之间。功率铜可以在芯片衬底前侧312上形成并且可以覆盖半导体芯片的前侧表面的大约一半或更多。半导体芯片可以进一步包含绝缘硼磷硅酸盐玻璃（BPSG）层，该绝缘硼磷硅酸盐玻璃（BPSG）层可以在芯片前侧312处形成并且可以被用于提供半导体芯片的金属层之间的电绝缘。BPSG层比如可以是大约1.5 μm厚。BPSG比如可以具有下述厚度：该厚度位于0.5 μm到10 μm之间，或例如在1 μm到5 μm之间，或例如在1 μm厚到3 μm之间。
芯片背侧311可以是在此处形成第二源极/漏极区的芯片的侧。比如，半导体芯片307可以包含在芯片背侧311之上形成的一个或多个芯片背侧金属化层。芯片背侧金属化层比如可以包含铜或任何其它适合的导电材料。比如，铜层（例如可以是大约2 μm厚的铜层）可以在芯片背侧311之上形成，并且可以为扩散焊料提供弓形补偿（bow compensation）。
引线框架308可以是导电引线框架，其可以被电连接到半导体芯片307的横向背侧311。半导体芯片307可以经由例如可以是预制结构的居间焊料层309被焊接到引线框架308。比如，芯片的背侧311可以经由居间层309被焊接到引线框架308。比如，居间焊料层309可以被布置在半导体芯片307和引线框架308之间，并且可以被焊接到半导体芯片307（例如经由芯片背侧金属化层）和引线框架308。比如，居间焊料层309的第一横向侧可以被焊接到半导体芯片307并且居间焊料层309的第二横向侧可以被焊接到引线框架308。居间焊料层309和引线框架308的总厚度比如可以是大约1 mm，或例如大于1 mm。
在图3中示出的居间焊料层309的横向侧或表面的表面积比如可以大于要被焊接的半导体芯片布置的半导体芯片的横向侧或表面的表面积。比如，居间焊料层309的一个（或每个）横向侧的长度可以比半导体芯片的一个（或每个）横向侧的长度更大大约10 μm、或例如大约20 μm、或例如大约50 μm。
半导体芯片307也可以通过居间焊料层309被热连接到引线框架308。居间焊料层309可以具有大于大约 100 W/mK的导热率，并且也可以具有接近硅衬底的热膨胀系数（CTE）的热膨胀系数，例如其可以是大约2.7×10-6K-1。
比如，表1示出依据实施例的预制结构（或焊料焊盘）的示例的行为。示出半导体芯片布置的宏观金属和玻璃的材料值以及在薄圆形板中经历的温度应力的数值计算和解析解。
半导体芯片布置（例如，300）可以包含半导体芯片。半导体芯片可以包含比如具有大约40 μm的厚度的硅衬底。半导体芯片可以进一步包含比如可以是大约1.5 μm厚的BPSG（硼磷硅酸盐玻璃）。半导体芯片也可以包含铜金属例如功率Cu，该铜金属可以是大约7 μm厚、覆盖表面的一半并且在芯片衬底前侧上形成。在芯片衬底或晶片背侧上可以形成铜层，例如可以是大约2 μm厚、可以为扩散焊料提供弓形补偿的铜层。为了简单起见，假设没有低温工艺，尽管在实际中可以可选地执行这样的工艺。铜层比如可以被假设成从纯铜形成，该纯铜低于100℃变得坚硬并且严格遵循胡克定律。BPSG比如可以被假设成在400℃下是严格弹性的。芯片比如可以被假设成被焊接在包括50-50铜/石墨的复合材料的预制物上。预制物可以被假设成具有可变厚度，其中预制物和引线框架的总厚度被假设成近似1 mm。
在表1中以MPa示出应力值并且正值指示压应力且负值指示张应力，其可以是在一层内承载的最大应力。
通过碳纤维复合预制结构（例如，C-Cu）的使用并且通过碳纤维复合预制结构的厚度的选择，可以保护衬底或功率Cu的温度应力。针对碳纤维复合预制物的可能厚度比如可以在200 μm和400 μm之间。衬底和功率Cu的最小温度应力比如可以以具有200 μm和400 μm之间的厚度的碳纤维复合预制物来实现。
通过使用具有接近硅的CTE的材料可以减少温度应力。比如，可以使用包含碳纤维铜复合材料的热压引线框架，其中通过强烈减少的CTE可以减少由焊料引起的温度应力。表1也示出功率铜被丝网印刷石墨膏（其居间空间可想象地以电解铜填充）取代的情形，以及引线框架被碳复合引线框架（示出为所有复合物的行）取代的情形。如所示出，如果任何厚金属层要被复合材料取代，则温度应力可以显著地下降。考虑与碳纤维复合物的使用相关的成本考虑因素，在本文中描述的实施例不太昂贵地并且有效地减轻在半导体芯片布置的半导体芯片上的温度应力。
结合以上或以下描述的实施例（例如，预制结构、居间焊料层、半导体芯片布置、碳纤维复合片、导电层、碳纤维复合片的横向侧和焊料层）提及更多细节和方面。在图3中示出的实施例可以包括一个或多个可选额外特征，该一个或多个可选额外特征对应于结合以上（例如，图1或2）或以下（例如，图4到5C）描述的一个或多个实施例或提出的概念而提及的一个或多个方面。
图4示出依据实施例的用于形成用于半导体芯片布置的预制结构的方法400的流程图。
方法400可以包含410：热压碳纤维和补充材料以得到碳纤维复合片。
方法400可以进一步包含420：基于碳纤维复合片形成预制结构。
由于热压碳纤维以形成碳纤维复合片，可以制造包含碳纤维的网络的导热和紧凑碳纤维复合片。此外，当用于焊接半导体芯片布置时，包括碳纤维复合片的预制结构可以减少温度应力。比如，可以减少半导体芯片衬底中、或半导体芯片的金属或绝缘层中、或半导体芯片布置的引线框架中的温度应力。
用来形成碳纤维复合片的碳纤维比如可以包含沥青相碳纤维，该沥青相碳纤维与具有高抗张强度但是糟糕的导热率的聚丙烯晴（PAN）碳纤维相比较可以具有高导热率（例如，大于2000 W/mK）。碳纤维可以具有平均直径，该平均直径位于5 μm和15 μm之间，或例如在5 μm和10 μm之间。碳纤维可以具有平均长度，该平均长度位于200 μm和600 μm之间，或例如在200 μm和500 μm之间，或例如在250 μm和480 μm之间。
补充材料比如可以包含铜粉，该铜粉可以具有大于90%或例如大于99%的纯度。碳纤维和铜粉可以混合在一起以形成基本上均匀的混合物。替选地或额外地，补充材料可以包含电镀在碳纤维上的铜或铬。碳纤维比如可以以铬或铜中的至少一个被预电镀。
碳纤维和补充材料可以以大于大约1000℃的温度例如使用快速热压技术被热压以形成晶片状的碳纤维复合片或核。碳纤维和补充材料的混合物比如可以以大于大约2000psi、3000 psi、或4000 psi的压强来热压。热压的补充材料例如铜或铬比如可以改进碳纤维彼此的粘附性，从而导致晶片状的热压的碳纤维复合片。热压的碳纤维复合片可以具有下述厚度，该厚度位于50 μm到250 μm之间，例如在50 μm到200 μm之间，或例如在100 μm到175 μm之间。
方法400可以进一步包含将导电层沉积在碳纤维复合片的第一横向侧和第二横向侧中的至少一个之上。导电层比如可以包含铜（或任何其它适合的金属或材料）或可以是铜层，并且可以电解地沉积在碳纤维复合片的第一横向侧和/或第二横向侧之上或直接地沉积在碳纤维复合片的第一横向侧和/或第二横向侧上。比如，导电层可以至少部分或完全覆盖碳纤维复合片的第一横向侧和第二横向侧。导电层比如可以具有下述厚度，该厚度位于4μm到10 μm之间，或例如在5 μm到7 μm之间。
方法400可以进一步包含平滑导电层的表面。比如，可以通过化学机械抛光来执行导电层的表面的平滑。可以执行平滑以确保最终的预制结构的表面粗糙度可以小于大约2μm，或例如小于大约1.5 μm，或例如小于大约1 μm，或可以具有下述表面粗糙度：该表面粗糙度接近预制结构将被焊接到的材料的表面粗糙度（例如，在预制结构将被焊接到的材料的表面粗糙度的+/- 20%内或例如+/- 10%内）。
随后，焊料层或焊料层堆叠比如可以被沉积在导电层之上。焊料层比如可以包含金-锡或银-锡。比如，首先居间层锡可以在导电层之上或直接在导电层上形成。随后，可以保护免于侵蚀的进一步居间层银和/或金可以在居间层锡之上或直接在居间层锡上形成。
由于导电层的表面的平滑，在碳纤维复合片之上形成的焊料层的表面粗糙度和预制结构的最终表面粗糙度可以小于2 μm，或例如小于1 μm。比如，可以制造下述预制结构：该预制结构的顶和/或底表面具有接近正常引线框架或大约与正常引线框架相同（例如，在+/- 20%内，或例如在+/- 10%内）的表面粗糙度。
方法400可以进一步包含将包含一个或多个额外层（例如，包含任何居间层的焊料层和导电层）的碳纤维复合片个别化成多个预制结构。每个预制结构可以基于碳纤维复合片通过下述方式来形成：将碳纤维复合片个别化或切块成比如具有预确定的横向尺度的预制结构，从而预制结构的横向侧或表面的表面积可以等于、大于或小于要被焊接的半导体芯片的横向侧或表面的表面积。
随后，预制结构可以被焊接到半导体芯片和/或引线框架以在预制结构和半导体芯片和/或引线框架之间形成接缝（例如，永久接缝）并且在半导体芯片和/或引线框架之间提供热和电连接。
结合以上或以下描述的实施例（例如，预制结构、半导体芯片布置、碳纤维复合片、导电层、碳纤维复合片的横向侧和焊料层）提及更多细节和方面。在图4中示出的实施例可以包括一个或多个可选额外特征，该一个或多个可选额外特征对应于结合以上（例如，图1到3）或以下（例如，图5到5C）描述的一个或多个实施例或提出的概念而提及的一个或多个方面。
图5A示出依据实施例的用于焊接半导体芯片布置的方法500的流程图。
方法500包含510：在半导体芯片和载体结构之间布置预制结构。预制结构的横向侧的表面积小于半导体芯片的横向侧的表面积。
方法500进一步包含520：焊接半导体芯片布置。
由于在半导体芯片和载体结构之间的具有比半导体芯片的横向尺寸更小的横向尺寸的预制结构的布置，比如可以减少或防止在焊接半导体芯片布置期间由于锡和铜的共熔混合引起的半导体芯片的侧壁的变湿。
预制结构比如可以包含碳纤维复合片和在碳纤维复合片之上形成的焊料层。焊接比如可以通过扩散焊接来完成。
图5B示出在焊接之前（例如，在扩散焊接之前）的半导体芯片507、预制结构522和引线框架508。预制结构522比如可以类似于预制结构100、200。
预制结构522或焊料结构可以包含在至少一侧或两侧上已经以锡预涂布的碳复合片。比如，预制结构522可以包含碳纤维复合片502，该碳纤维复合片502可以包含碳纤维和铜。预制结构522比如可以包含在碳纤维复合片502的第一横向侧之上形成的预涂布的第一焊料层504a（包括锡，例如Au-Sn或Ag-Sn）和在碳纤维复合片102的第二横向侧之上形成的第二焊料层504b。
预制结构522的横向侧或表面的表面积比如可以小于半导体芯片布置的半导体芯片507的横向侧或表面的表面积。比如，预制结构522的一个（或每个）横向侧的长度可以比半导体芯片的一个（或每个）横向侧的长度更小大约10 μm到20 μm。比如，预制结构522的横向尺寸可以比半导体芯片的横向尺寸的99%更小，或例如比半导体芯片的横向尺寸的95%更小，或例如比半导体芯片的横向尺寸的90%更小。
半导体芯片507比如可以包含功率电子部件，该功率电子部件可以包含带有p型（或n型）扩散区带的n型（或p型）材料衬底514。功率电子部件比如可以具有大于大约10 V或例如大于大约100 V的操作电压，并且可以传导或切换大于大约1 A或例如大于大约10 A的电流。半导体芯片507比如可以包含单元结构512或有源区域、和高电压边缘区513。
如在图5B和5C中示出，半导体芯片507可以被布置在引线框架508之上，其中预制结构522在半导体芯片507和引线框架508之间。比如，预制结构522可以被布置在半导体芯片507的主（例如，底）表面和引线框架508的横向表面之间。
由于与半导体芯片507相比较预制结构522的更小的横向尺寸或表面积，侧槽或槽口517可以在预制结构522的侧壁处形成。比如，预制结构522可以被布置从而具有大约10 μm到20 μm的宽度的从半导体芯片的外围延伸到预制结构的外围的槽（例如，517）围绕预制结构。比如，侧槽或槽口517可以是中空或凹形区（或底切区）并且可以在预制结构522的表面积小于或底切半导体芯片507的横向表面的表面积的区中形成。侧槽517的几何形状比如可以由下述限定：半导体芯片507将被焊接到的引线框架508的平面表面区、预制结构522的侧壁以及要被焊接到引线框架的半导体芯片507的平面表面区。侧槽517比如可以围绕（例如，完全围绕）预制结构522。
当焊接工艺开始时，液化的混合物（可以包含液化的焊料层104a和104b，例如锡和铜的共熔混合物）可以在芯片表面区（例如，要被焊接到引线框架的半导体芯片的平面表面区）处至少部分地填充侧槽517而不是蔓延到芯片的侧壁上。
图5C示出在扩散焊接之后的半导体芯片布置500。在扩散焊接之后，半导体芯片布置500可以包含半导体芯片507、居间焊料层509（来自预制结构522）和引线框架508。半导体芯片507比如可以被在扩散焊接到引线框架上以减少温度应力。在焊接之后，重新形成的焊料可以填充或至少部分填充侧槽517，由此由于表面应力和/或界面能量，比如可以形成弯液面。
由于使用具有比半导体芯片的横向尺寸更小的横向尺寸的预制结构的实施，比如可以减少或防止在半导体芯片的扩散焊接期间由于锡和铜的共熔混合引起的半导体芯片的侧壁的变湿。比如，也可以减少或防止硅酸铜的晶体缺陷。由于槽结构的形成，芯片或大的半导体芯片可以被扩散焊接到铜引线框架或直接铜键合（DCB）印刷电路板，并且液化的共熔混合物可以流到侧槽结构中而不是蔓延到芯片的侧壁上，同时保持芯片。此外，用来在引线框架或DCB中创建额外槽的铜引线框架或DCB的额外结构化比如可以不再是必要的。此外，例如由于碳纤维复合片在居间焊料层中的存在，在焊料的固化之后比如可以实现温度应力的减少。
结合以上或以下描述的实施例（例如，预制结构、居间焊料层、半导体芯片布置、碳纤维复合片、导电层、碳纤维复合片的横向侧、焊料层和引线框架）提及更多细节和方面。在图5A到5C中示出的实施例可以包括一个或多个可选额外特征，该一个或多个可选额外特征对应于结合以上（例如，图1到4）或以下描述的一个或多个实施例或提出的概念而提及的一个或多个方面。
各种实施例涉及碳纤维复合材料的预制物。来自碳纤维-铜复合材料的预制结构或焊料焊盘可以具有大约50到250 μm的厚度，并且它们的顶和/或底表面可以具有与正常引线框架相同的粗糙度。预制结构或焊料焊盘可以被制造且被施加到半导体芯片布置，并且可以是对钼焊盘的替换方式。这样的预制结构或焊料焊盘可以实现芯片和引线框架之间的CTE的逐渐增加和温度应力的减少。此外，它们可以为要被扩散焊接的更大芯片提供可能性。比如，通过在侧上沉积金-锡（Au-Sn）层可以形成可以被扩散焊接在铜引线框架上的预制结构。在芯片背侧上的Au-Sn层比如可以确保芯片和预制物之间的扩散焊料。通过在两侧上沉积另一个Au-Sn层，可以实现能够被扩散焊接在两侧上的预制物。
各种实施例涉及热压与沥青纤维和铜粉混合的、或来自铬预电镀或铜电镀的纤维的碳纤维的晶片状核。晶片状核的两侧可以以铜电解沉积。可以执行化学机械抛光以平滑铜表面。可以通过针对扩散焊接沉积锡和侵蚀保护物（例如，通过Au-Sn或Ag-Sn）来执行完成一个或两个表面。可以执行预制晶片状核的个别化以制造稍微大于个别芯片的焊料焊盘。用于扩散焊接到硅芯片上的焊料焊盘可以包含热压的碳纤维铜复合材料的晶片状核并且具有一个或两个扩散可焊接的表面，其中表面粗糙度明确小于1 μm。特别地，用于将硅芯片扩散焊接到铜引线框架上的预制物比如可以包含热压的铜纤维-铜复合材料或由热压的铜纤维-铜复合材料构成。表面的两侧可以同样地以保护免于侵蚀的扩散可焊接的金-锡或银-锡层覆盖。
各种实施例涉及使用包含烧结的碳纤维复合物或由烧结的碳纤维复合物制成的预制物的自调节焊料槽。各种实施例也涉及使用碳复合物（例如，C-Cu）预制焊料结构组装功率电子部件。预制结构可以小于芯片并且液体的相当大部分可以填充在按压的焊料结构的侧或侧壁处的槽。
钼焊盘的插入中间布置比如可以通过用于千兆赫范围中的移动电话的横向扩散金属氧化物半导体（LDMOS）芯片的组件来提供CTE的逐渐过渡。尽管冷电解工艺可能已被用来在晶片上制造复合材料，但是通过热压工艺来得到无电沉积的铜在碳纤维上的粘附性。粘附金属层例如铬可以提供碳纤维的电解或丝网印刷预处理。此外，偶尔其它因素可以妨碍执行这样的工业质量的预处理。
适合于形成用于预制结构的碳纤维复合片的碳纤维比如可以以50欧元/千克（Euro/kg）或更少商业地获得或制造。尽管基于体积的对应数量的铜可能至少昂贵十倍，但是来自原材料的复合材料将仅是纯铜的一半贵。比如，因为碳纤维的低比重，体积价格可以比铜的体积价格低得多。钼比如可能不能够在价格方面竞争。
针对热压对碳纤维上的铜的无电沉积工艺使用钯可能是热压的碳纤维铜复合材料的高价格的原因。比如，在下述情形下成本可能相当大：如果所有铜层要被碳纤维复合材料取代。然而，复合材料可以在没有铜的无电沉积的情况下实现并且用于纤维的铬电镀的原材料比如可以比带有钯添加剂的电镀槽便宜得多。
当在计算机或处理器上运行计算机程序时，示例实施例可以进一步提供具有用于执行以上方法中的一个的程序代码的计算机程序。本领域技术人员将容易地意识到可以通过编程的计算机来执行各种以上描述的方法的动作。在本文中，一些示例实施例也意图覆盖程序存储器件，例如数字数据存储介质，其是机器或计算机可读的并且对机器可运行的或计算机可运行的指令的程序编码，其中所述指令执行以上描述的方法的动作中的一些或所有。程序存储器件可以是例如数字存储器、磁存储介质诸如磁碟和磁带、硬盘、或光可读数字数据存储介质。进一步示例实施例也意图覆盖被编程以执行以上描述的方法的动作的计算机、或被编程以执行以上描述的方法的动作的（场）可编程逻辑阵列（（F）PLA）或（场）可编程门阵列（（F）PGA）。
描述和附图仅仅图解公开内容的原理。因而将会被认识到的是本领域技术人员将能够设计各种布置，该布置尽管在本文中没有明确地描述或示出，但是体现本公开内容的原理并且被包含在其精神和范围内。此外，在本文中列举的所有示例主要明确意图于只为了教学的目的以辅助读者理解公开内容的原理和由（一个或多个）发明者贡献的概念以推动本领域，并且本文列举的所有示例被理解为没有被局限于这样特定列举的示例和条件。另外，在本文中列举公开内容的原理、方面和实施例的所有陈述以及其特定实施例意图涵盖其等价物。
被指示为“用于….的装置”（执行特定功能）的功能块将被理解为包括被配置成分别执行某个功能的电路的功能块。因此，“用于某物的装置”也可以被理解为“被配置成或适合某物的装置”。被配置成执行特定功能的装置因此不暗示这样的装置必须正在执行功能（在给定的时间时刻）。
在附图中示出的各种元件的功能，包含被标为“装置”、“用于提供传感器信号的装置”、“用于生成传输信号的装置”等等的任何功能块，可以通过专用的硬件诸如“信号提供器”、“信号处理单元”、“处理器”、“控制器”等等以及能够运行与合适的软件关联的软件的硬件的使用而被提供。另外，任何在本文中被描述为“装置”的实体可以对应于或被实施为“一个或多个模块”、“一个或多个器件”、“一个或多个单元”等等。当由处理器提供时，该功能可以由单个专用的处理器提供，由单个共享的处理器提供，或由多个个别处理器（其中的一些可以被共享）提供。另外，术语“处理器”或“控制器”的明确使用不应该被理解成专门指的是能够运行软件的硬件，并且可以不言明地包含而没有限定数字信号处理器（DSP）硬件、网络处理器、专用集成电路（ASIC）、场可编程门阵列（FPGA）、用于存储软件的只读存储器（ROM）、随机访问存储器（RAM）、和非易失储存器。其它硬件，传统的和/或定制的，也可以被包含。
应该被本领域技术人员认识到在本文中任何框图表示图解的体现公开内容的原理的电路的概念视图。类似地，将被认识到任何流程图表、流程图、状态转换图、伪码等等表示各种过程，所述过程可以基本上被表示在计算机可读介质中并且被计算机或处理器这样运行，无论这样的计算机或处理器是否被明确地示出。
此外，下文的权利要求被结合进具体实施方式，其中每项权利要求可以作为单独的实施例自身而成立。当每项权利要求可以作为单独的实施例自身而成立时，要被指出的是尽管从属权利要求可以在权利要求中指的是与一项或多项其它权利要求的特定组合，但是其它实施例也可以包含带有每个其它从属或独立权利要求主题的从属权利要求的组合。在本文中提出这样的组合除非陈述不意图于特定的组合。此外，意图于也把权利要求的特征包含到任何其它独立权利要求，即使这个权利要求没有直接从属于所述独立权利要求。
要被进一步指出的是在说明书中或在权利要求书中公开的方法可以被具有用于执行这些方法的分别动作中的每一个的装置的器件实施。
进一步地，要被理解的是在说明书中或在权利要求书中公开的多个动作或功能的公开内容可以不被理解为在特定的次序内。因此，多个动作或功能的公开内容将不局限这些到特定的次序，除非这样的动作或功能出于技术原因是不可互换的。此外，在一些实施例中，单个动作可以包含或可以被分断成多个子动作。这样的子动作除非明确被排除可以被包含并且可以是这个单个动作的公开内容的部分。

Claims (17)

1.一种用于焊接半导体芯片布置的预制结构，所述预制结构包括：
碳纤维复合片；
在所述碳纤维复合片之上形成的焊料层；
在所述碳纤维复合片的第一横向侧处在所述碳纤维复合片和所述焊料层之间形成的导电层；以及
在与所述碳纤维复合片的所述第一横向侧相对的所述碳纤维复合片的第二横向侧处在所述碳纤维复合片和第二焊料层之间形成的第二导电层。
2.依据权利要求1的所述预制结构，其中所述碳纤维复合片包括碳纤维和铜或铬中的至少一个。
3.依据权利要求1的所述预制结构，其中所述碳纤维复合片包括在50%到80%之间的铜或铬。
4.依据权利要求1的所述预制结构，其中在所述碳纤维复合片之上形成的所述焊料层的表面粗糙度小于2 μm。
5.依据权利要求1的所述预制结构，其中所述预制结构进一步包括在所述碳纤维复合片和所述焊料层之间形成的导电层。
6.依据权利要求5的所述预制结构，其中所述导电层包括铜。
7.依据权利要求1的所述预制结构，其中所述焊料层包括金-锡或银-锡。
8.依据权利要求1的所述预制结构，其中所述碳纤维复合片具有位于50 μm到250 μm之间的厚度。
9.依据权利要求1的所述预制结构，其中所述预制结构具有位于200 μm到400 μm之间的厚度。
10.一种用于形成用于半导体芯片布置的预制结构的方法，所述方法包括：
热压碳纤维和补充材料以得到碳纤维复合片；
在所述碳纤维复合片的第一横向侧处形成导电层；
在与所述碳纤维复合片的所述第一横向侧相对的所述碳纤维复合片的第二横向侧处形成第二导电层；
在所述导电层上沉积焊料层；以及
在所述第二导电层上沉积第二焊料层；基于所述碳纤维复合片、所述导电层、所述第二导电层、所述焊料层和所述第二焊料层形成预制结构。
11.依据权利要求10的所述方法，其中所述补充材料包括铜粉。
12.依据权利要求10的所述方法，其中所述补充材料包括电镀到所述碳纤维上的铬或铜。
13.依据权利要求10的所述方法，进一步包括平滑所述导电层的表面从而在所述碳纤维复合片之上形成的所述焊料层的表面粗糙度小于2 μm。
14.依据权利要求10的所述方法，进一步包括将所述碳纤维复合片个别化成多个预制结构。
15.一种用于焊接半导体芯片布置的方法，所述方法包括：
将根据权利要求1至9之一的预制结构布置在半导体芯片和载体结构之间，其中所述预制结构的横向侧的表面积小于所述半导体芯片的横向侧的表面积；并且
焊接所述半导体芯片布置。
16.依据权利要求15的所述方法，其中所述预制结构包括碳纤维复合片以及在所述碳纤维复合片之上形成的焊料层。
17.依据权利要求15的所述方法，其中焊接通过扩散焊接完成。
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