JP4766725B2 - 電子部品の製造方法 - Google Patents

電子部品の製造方法 Download PDF

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Publication number
JP4766725B2
JP4766725B2 JP18733699A JP18733699A JP4766725B2 JP 4766725 B2 JP4766725 B2 JP 4766725B2 JP 18733699 A JP18733699 A JP 18733699A JP 18733699 A JP18733699 A JP 18733699A JP 4766725 B2 JP4766725 B2 JP 4766725B2
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Prior art keywords
wire
layer
metal layer
solderable metal
solder
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JP18733699A
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JP2000036511A (ja
Inventor
ヨセフ・ケイ・ファウティ
ジェームス・ピー・レターマン，ジュニア
マイケル・ジェイ・セドン
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Semiconductor Components Industries LLC
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Semiconductor Components Industries LLC
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    • H—ELECTRICITY
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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/16—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating with interposition of special material to facilitate connection of the parts, e.g. material for absorbing or producing gas
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Description

【０００１】
【発明の属する技術分野】
本発明は、一般的に、電子回路に関し、更に特定すれば、電子部品および製造方法に関するものである。
【０００２】
【従来の技術】
半導体素子をリードフレームに電気的に接続するために、ウェッジ・ボンド・アルミニウム・ワイヤ・ボンド(wedge bonded aluminum wire bond)が用いられている。大電力素子では、アルミニウム・ワイヤ・ボンドの直径は、典型的に、０．１ないし０．７ミリメートルとし、大電流搬送能力を備えている。しかしながら、アルミニウム・ワイヤを用いる素子は、銅ワイヤと比較すると、オン抵抗が高く、オン抵抗が高い程、素子の電気的性能が低下する。更に、導電率を高めるためには、１つ以上のアルミニウム・ワイヤをボンディング・パッドにボンドしなければならないか、あるいは多数のボンドを同じワイヤで作らなければならない。しかしながら、これら余分な製造工程は、生産性低下を招く。
【０００３】
銅ワイヤの使用により、アルミニウム・ワイヤよりもオン抵抗が減少し、素子の電気的性能が向上するが、銅ワイヤを使用すると、素子の生産性が低下する。即ち、大きな直径の銅ワイヤは、半導体基板またはそれを覆う誘電体層にクラックまたはクレータを形成しなくてはボンディング・パッドにボンドすることができず、素子に損傷を与えることになる。
【０００４】
【発明が解決しようとする課題】
したがって、大電力用途における使用に適し、オン抵抗が小さく、しかも生産性を向上させる電子部品を製造する、改良された製造方法が必要とされている。
【０００５】
【発明の実施の形態】
はじめに、図示の簡略化および明確化のため、図面内のエレメントは必ずしも同じ拡縮率で描かれている訳ではなく、異なる図における同一の参照番号は、同一のエレメントを示すものとする。
【０００６】
図１は、電子部品１００の部分概略図を示す。部品１００は、基板１０１，基板１０１上にある電気絶縁層１０３，層１０３上にある導電層１０４，１０５，１０６，１０７，１０８，および層１０７，１０８にボンドされたワイヤ１０９を含む。基板１０１は、半導体素子を支持する。半導体素子は、図１ではエレメント１０２によって全体的に示されており、ダイオード，トランジスタ，集積回路等とすることができる。したがって、基板１０１は、半導体材料で構成することができ、更に半導体素子の異なる部分の適正な電気配線および分離のために、追加の電気絶縁層および導電層を含むことができる。
【０００７】
層１０３は、例えば、二酸化シリコンおよび窒化シリコンから成る単一層または複数の層とすることができる。層１０３は、基板１０１の部分を、上に位置する導電層１０４，１０５，１０６，０１７，１０７から電気的に分離する。層１０３は、ビア（図１には示されていない）を有し、これを通じて上に位置する層１０４，１０５，１０６，１０７，１０８を基板１０１の他の部分および半導体素子に電気的に結合する。
【０００８】
層１０４，１０５，１０６，１０７，１０８は、部品１００のボンディング・パッドを形成する。層１０４，１０５，１０６，１０７，１０８は、順次層１０３上に配置または堆積され、半導体素子の上に位置することができる。層１０４，１０６はオプションの接着またはバリア層であり、層１０５は相互接続層であり、層１０７ははんだ可能メタライゼーション層であり、層１０８ははんだ層である。一例として、層１０４，１０６は、チタン・タングステン，窒化チタン，窒化チタン・タングステン，クロム等で作ることができる。追加の例として、層１０５は、銅，アルミニウム，アルミニウム・シリコン，アルミニウム銅，アルミニウム・シリコン銅等で作ることができる。更に、層１０７は、例えば、（１）チタン，ニッケル，および銀（２）無電解ニッケルおよび浸漬金、（３）クロム，ニッケル，および銀（４）スパッタリングによる銅およびめっきした銅、（５）スパッタリングによる銅，無電解ニッケル，および浸漬金、等のように、複数の層で作ることができる。層１０８は、例えば、９５％鉛および５％錫，または４０％鉛および６０％錫のような、いずれかの鉛系、錫系、または金系はんだを含むが、これらには限定されない、適切なはんだで構成することができる。部品１００の一体性および信頼性を維持するためには、層１０８の変形温度即ち融点は、部品１００の最も高い動作温度よりも少なくとも約１０℃高くなければならない。
【０００９】
ワイヤ１０９の一端を、コンタクト層１０８にワイヤ・ボンドする。ワイヤ１０９は、大電力用途における使用に適することが好ましい。したがって、ワイヤ１０９の直径は、約０．１ミリメートル以上と大きくすることが好ましい。更に、部品１００のオン抵抗を小さくするために、ワイヤ１０９は、アルミニウムの代わりに銅で構成することができる。何故なら、銅の抵抗率はアルミニウムよりも約３５パーセント低いからである。好ましくは、ワイヤ１０９は本質的に銅から成る。また、ワイヤ１０９の銅は、完全にアニールするかあるいは過剰アニール(over anneal)し、以下に説明する理由のために、ワイヤ１０９の剛性が大きすぎないように、即ち、硬すぎることがないようにすることが好ましい。ワイヤ１０９は、銅合金で構成することができるが、同じ理由により、合金は純粋な銅よりも小さな剛性であることが好ましい。
【００１０】
図２は、図１の部品１００の製造方法２００を纏めたものである。概略的に、方法２００は、自動ワイヤ・ボンディング・プロセスにおいてはんだを用いる。方法２００は、図１の基板１０１のような基板を用意する工程２０１を含む。方法は、工程２０２に進み、図１のエレメント１０２のような半導体素子を基板内に形成する。次に、工程２０３において、図１の層１０４，１０５，１０６のような少なくとも１つの金属層を、基板および半導体素子上に堆積する。次に、工程２０４において、図１の層１０７のようなはんだ可能金属層（はんだ付けが可能な金属層）を、はんだ不可能金属層上に堆積する。
【００１１】
続いて、方法２００は工程２０５に進み、図１のワイヤ１０９のようなワイヤを、はんだ層の直下にあるはんだ可能金属層にワイヤ・ボンドする。工程２０５については、以下で図３において更に詳しく説明する。次に、工程２０６において、ワイヤの対向端を異なる金属層にボンド（結合）する。好適実施例では、工程２０５を実行する前に、工程２０１の基板をリードフレームのフラグ上に取り付ける。工程２０６の異なる金属層とは、リードフレームのリードである。
【００１２】
図３は、図２の方法２００における工程２０５の要点を更に詳しく示す。図３に示すように、工程２０５は、ワイヤをはんだ可能金属層にワイヤ・ボンドする際に、２つの可能な経路に分岐する。２つの分岐路の各々では、異なるシーケンスで、はんだ可能金属層上にはんだ層を堆積し、ワイヤをはんだ可能金属層に合わせる(tack)。以下で更に詳しく説明するが、はんだ層は、電子部品の電気的性能を向上させ、しかもワイヤとはんだ可能金属層との間のボンドの機械的強度を高める。
【００１３】
図３の工程２０５の左側の分岐路は、工程３０１を含む。工程３０１では、図１の層１０８のようなはんだ層を、はんだ可能金属層上に堆積する。一例として、はんだ層の厚さは、約２５マイクロメートルとすることができる。次に、図３の工程２０５の左側の分岐路は工程３０２に進み、はんだ層を加熱して、ワイヤをはんだ可能金属層に合わせる。工程３０２については、以下で図４において更に詳しく説明する。
【００１４】
図３における工程２０５の右側の分岐路は、工程３０３を含み、はんだ可能金属層に接触しているワイヤの一端に圧力を加え、ワイヤおよびはんだ可能金属層に超音波を印加することによって、ワイヤをはんだ可能金属に合わせる。超音波の作用により、ワイヤとはんだ可能金属層との間に弱い機械的結合を形成する。工程３０３は、はんだ可能金属層上にいずれのはんだも配する前に実行する。次に、図３における工程２０５の右側の分岐路は、工程３０４に進み、はんだ可能金属層およびワイヤの一端に加熱はんだを投与し、ワイヤの一端をはんだ可能金属層に更に強力にボンドする。尚、工程３０３は工程３０４の前に開始するが、工程３０３は工程３０４の実行の間にも継続することが好ましく、その場合工程３０４は熱音波プロセス(thermosonic process)となる。
【００１５】
右側の分岐路または左側の分岐路のいずれかが完了した後、図３における工程２０５は、工程３０５に進み、硬化したはんだ層の冷却またはその他の方法による固化を行う。工程３０３の超音波は、はんだが適正に固化し、ワイヤとはんだ可能金属層との間のボンドを補強することができるように、工程３０５まで継続させないことが好ましい。しかしながら、工程３０３においてワイヤの一端に加える圧力は、工程３０５の間もワイヤの一端に維持しておき、はんだが固化する前に、工程３０２，３０３のタック・ボンド(tack bond)が破壊されないことを保証する。続いて、工程３０６において加えていた圧力を解除し、工程２０５のワイヤ・ボンディング・プロセスが完了する。
【００１６】
図４は、図３の工程３０２の要点を更に詳しく説明する。図４に示すように、工程３０２は、ワイヤをはんだ可能金属層にワイヤ・ボンドする際に、３つの可能な経路に分岐する。３つの分岐路の各々では、異なるシーケンスで、はんだ層を加熱し、ワイヤをはんだ可能金属層にタックする。
【００１７】
図４における工程３０２の左側の分岐路では、ワイヤ・タック工程の前に、はんだ加熱工程を実行する。即ち、左側の分岐路は、工程４０１を含み、最初にはんだ層を加熱して、このはんだ層を軟化即ちリフローさせる。はんだ層を加熱するには、このはんだ層を直接加熱するか、あるいは下地の基板を介して間接的にはんだ層を加熱することができる。一例として、テープ自動化ボンディング技法において用いられるものと同様の、パルス加熱方法(pulse heating method)によって熱を加えることができる。
【００１８】
次に、図４における工程３０２の左側の分岐路は工程４０２に進み、ワイヤの一端に圧力を加え、軟化したはんだ層を貫通してワイヤをはんだ可能金属層に接触させることによって、ワイヤをはんだ可能金属層にタックする。しかしながら、加える力は、溶融即ち軟化したはんだ層の表面張力を突破するのに十分な大きさでなければならない。また、工程４０２は、ワイヤおよびはんだ可能金属層に対する超音波の印加も含む。超音波の作用により、ワイヤとはんだ可能金属層との間に弱い機械的ボンドを形成する。工程４０１は工程４０２の前に開始するが、工程４０１は工程４０２の実行の間も継続し、工程４０２を熱音波工程とすることが可能である。
【００１９】
図４における工程３０２の中央の選択肢は、工程４０３を含み、ワイヤの一端に圧力を加え、はんだ層と接触させる。加える圧力は、工程４０２において既に説明したものと同様とする。次に、中央の選択肢は工程４０４に進み、はんだ層を加熱し、はんだ層の直下に位置するはんだ可能金属層にワイヤをタックする。工程４０４では、工程４０３の加圧を継続し、軟化したはんだ層を貫通してワイヤの一端を下地のはんだ可能金属に接触させる。また、工程４０４は、工程４０２において先に説明した超音波プロセスと同様の超音波プロセスも含む。したがって、工程４０４は、熱音波工程となる。工程４０４では、工程４０１において既に説明したようにはんだ層を加熱することができ、あるいはワイヤを通じてはんだ層を間接的に加熱することも可能である。
【００２０】
図４における工程の右側の分岐路は、工程４０５を含み、はんだ層の加熱およびワイヤのはんだ可能金属層へのタックを同時に行う。工程４０５のタッキング技法は、工程４０２，４０４において既に説明した加圧プロセスおよび超音波プロセスと同様のプロセスを含むことができる。したがって、工程４０５は、熱音波工程とすることができる。一例として、同時加熱およびタックは、ワイヤの一端を高熱水素炎で加熱し、次いで加熱したワイヤをはんだ層に接触させることによって行うことができる。
【００２１】
従来技術の自動ワイヤ・ボンド・プロセスにおいて銅ワイヤを用いる場合、必要な圧力即ち力の量は、同じサイズのアルミニウム・ワイヤよりも、少なくとも２倍大きい。この圧力増大が必要となるのは、銅の方がアルミニウムよりも硬く、展性がないからである。しかしながら、圧力増大は、ダイにクラックやクレータが形成されることを含む多くの問題を生ずる。尚、問題はこれに限られる訳ではない。
【００２２】
ここに記載する方法および部品においてはんだを用いることにより、従来技術に比較して、低い圧力をワイヤ・ボンド・プロセスにおいて使用することが可能となる。実際、はんだを用いた場合、大径のアルミニウム・ワイヤに用いる圧力を、同じサイズの銅ワイヤにも用いることが可能となる。大径のアルミニウム・ワイヤに用いる圧力は、以前に必要であった銅ワイヤに対する高い圧力に伴う問題を生ずることはない。一例として、直径０．１ミリメートルの銅ワイヤの場合、はんだを用いない場合に３５０グラムの力が必要であるのに対して、ここに記載する方法は約１５０グラムの力を用いることができる。
【００２３】
従来技術の自動ワイヤ・ボンド技法は、１９６０年代始めから一般に使用されているが、はんだを用いたことは全くない。従来技術の自動ワイヤ・ボンド技法は、手作業のワイヤはんだ技法に取って代わった。手作業のワイヤはんだ技法では、ワイヤをボンディング・パッドにワイヤ・ボンドまたはタックすることができなかった。代わりに、ワイヤを適所に保持しボンディング・パッドに接触するためには、ワイヤはんだ技法のみが用いられていた。
【００２４】
ここに記載するワイヤ・ボンディング・プロセスのタッキング技法は、自動化プロセスであり、好ましくはウェッジ・ボンディング(wedge bonding)技法を用い、好ましくはボール・ボンディング技法を用いない。ウェッジ・ボンディング技法は、ワイヤの一端即ち先端を、ボール・ボンディング技法におけるように、ワイヤの直径の３倍以上もある直径を有するボールに変形させることはない。したがって、ウェッジ・ボンディング技法は、より小さなボンディング・パッドとでも用いることができ、一層小型化され安価な半導体部品を生産することが可能となる。
【００２５】
工程３０３，４０２，４０４，４０５のタッキング・プロセスは、ワイヤとはんだ可能金属層との間に弱いボンドを形成する。固化したはんだは、ワイヤとはんだ可能金属層との間の機械的ボンドを改善即ち強化する。更に、はんだは、ワイヤとはんだ可能金属層との間の電気的接触面積を広げ、接触面積の拡大によってオン抵抗が減少し、部品の電気的性能が改善する。半導体部品の製造コストを削減するためには、図２における工程２０６のワイヤ・ボンディング・プロセスにははんだを用いないことが好ましい。
【００２６】
以上のように、従来技術の欠点を克服する、改善された電子部品および製造方法を提供した。この電子部品は、ここで述べたように、大電力用途に適し、オン抵抗が小さく、より短いサイクル・タイムで製造可能である。ここに記載した熱音波ウェッジ・ボンディング・プロセスは、電子部品のボンド・パッドにはんだを用いて導電性の高い構造を形成し、電子部品のオン抵抗を小さくして、半導体部品の電気的特性を改善する。ボンド・パッドにおいてはんだを用いることにより、更に直径が大きい銅ワイヤの使用が可能となり、オン抵抗が減少し、多数のワイヤやステッチ・ボンディング(stitch bonding)の必要性を排除することも可能となる。多数のワイヤやステッチ・ボンディングを不要とすることにより、半導体部品を製造するために必要なサイクル・タイムが短縮する。また、ウェッジ・ボンディング・プロセスは、従来のボール・ボンディング・プロセスと比較すると、基板全体で消費する空間も少なくて済む。
【００２７】
以上、好適実施例を主に参照しながら、本発明を特定的に示しかつ説明したが、本発明の精神および範囲から逸脱することなく、その形態および詳細には変更が可能であることは、当業者には認められよう。例えば、ここに明記した数多くの詳細、例えば、具体的な寸法や具体的な材料組成は、本発明の理解を容易にするために提示したのであって、本発明の範囲を限定するために提示したのではない。一例として、図１における層１０８は、はんだで構成すると説明したが、他の導電層または接着層をはんだと交換したり、あるいははんだと共に使用可能であることは理解されよう。
【００２８】
加えて、図１のワイヤ１０９は、アルミニウムで構成されたコアおよび本質的に銅から成る外部コーティング、またはその逆を有することができる。更に、図１のワイヤ１０９にはんだをコートし、図３の工程３０１，３０４におけるはんだの堆積を不要とすることも可能である。更にまた、図４における工程４０２，４０４，４０５で加える圧力を小さくすることができ、これら同じ工程の超音波を省略し、ワイヤをはんだ可能金属層にタックしないようにすることも可能である。この実施例では、冷却したはんだが、はんだ可能金属層に取り付けられたワイヤを保持する。
【００２９】
別の例として、図２における工程２０５を修正し、はんだを除去して、十分な強度でワイヤをはんだ可能金属層にウェッジ・ボンドまたはタックすれば、ウェッジ・ボンドが外れることがないように工程２０６を実行することが可能である。工程２０６の後、ウェッジ・ボンド周囲にはんだを分与および／またはリフローし、次いではんだ層を冷却することができる。追加の例として、図３の工程３０１において、はんだ層に孔を配し、即ち、穿設し、下地のはんだ可能金属層の一部分を露出させることができる。次いで、工程４０３，４０５を修正し、この孔にワイヤを挿入し、はんだ層に接触することなく、露出したはんだ可能金属層に直接ワイヤを接触させることができる。工程４０４，４０５の間、はんだ層はリフローし、ワイヤのコンタクト部分周囲に集まる(wick)。
【００３０】
別の例として、図２における工程２０５を修正し、はんだ層をその融点未満の温度に加熱し、次いで十分な強度でワイヤを下地のはんだ可能金属層にウェッジ・ボンドまたはタックすれば、ウェッジ・ボンドが外れることなく工程２０６を実行することが可能である。図２における工程２０６の後、ウエッジ・ボンド周囲にはんだをリフローすることができ、次いではんだ層を冷却することができる。追加の例として、図２の工程２０６の後、ワイヤおよびはんだ可能金属層上に、追加のはんだ層を配することができる。この追加のはんだ層によって、ワイヤとはんだ層との間の接触面積を更に広げ、電子部品のオン抵抗を更に小さくする。
【図面の簡単な説明】
【図１】本発明による電子部品の一実施例の部分構成図。
【図２】本発明による図１の電子部品を製造する方法を纏めた図。
【図３】本発明による図２の方法における一工程の要点を更に詳細に示す図。
【図４】本発明による図３の工程の一部の要点を更に詳細に示す図。
【符号の説明】
１００ 電子部品
１０１ 基板
１０２ 半導体素子
１０３ 電気絶縁層
１０４，１０５，１０６，１０７ 導電層
１０８ コンタクト層
１０９ ワイヤ

Claims (4)

  1. 電子部品の製造方法において、
    はんだ可能金属層を有する基板を提供する段階と、
    はんだ可能な金属からなるワイヤの一方端を前記はんだ可能金属層にワイヤ・ボンドする段階と、からなり、前記ワイヤ・ボンドする段階は、
    前記一方端上に加熱はんだ層を堆積する段階、および
    前記ワイヤに超音波を印加する段階、を含む、
    ことを特徴とする方法。
  2. 前記ワイヤ・ボンドする段階は、
    銅からなるワイヤをウェッジ・ボンドする段階を含み、さらに前記一方端を前記はんだ可能金属層にタックする段階、
    を含むことを特徴とする請求項１記載の方法。
  3. 電子部品の製造方法において、
    半導体基板（１０１）を用意する段階と、
    前記半導体基板内に半導体素子（１０２）を形成する段階と、
    前記半導体基板上にはんだ可能金属層（１０７）を堆積し、前記半導体素子に電気的に結合させる段階と、
    前記半導体基板上に堆積された前記はんだ可能金属層（１０７）上にはんだ層（１０８）を堆積する段階と、および
    前記はんだ可能金属層に銅からなるワイヤ（１０９）の一方端を、前記はんだ層を通して前記一方端を押すための圧力を加え、前記はんだ層を加熱し、前記ワイヤに超音波を印加することにより、ウェッジ・ボンドする段階と、
    から成ることを特徴とする方法。
  4. 前記はんだ可能金属層を堆積する段階に先だって、前記半導体基板上にアルミニウムからなるはんだ付け不可能な金属層を形成する段階、
    をさらに含むことを特徴とする請求項３記載の方法。
JP18733699A 1998-07-01 1999-07-01 電子部品の製造方法 Expired - Lifetime JP4766725B2 (ja)

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US09/108,448 US6164523A (en) 1998-07-01 1998-07-01 Electronic component and method of manufacture

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