JPS61231731A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

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Publication number
JPS61231731A
JPS61231731A JP60073030A JP7303085A JPS61231731A JP S61231731 A JPS61231731 A JP S61231731A JP 60073030 A JP60073030 A JP 60073030A JP 7303085 A JP7303085 A JP 7303085A JP S61231731 A JPS61231731 A JP S61231731A
Authority
JP
Japan
Prior art keywords
lead
bonding
copper alloy
back surface
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60073030A
Other languages
English (en)
Other versions
JPH0431182B2 (ja
Inventor
Saneyasu Hirota
弘田　実保
Kazumichi Machida
一道 町田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60073030A priority Critical patent/JPS61231731A/ja
Publication of JPS61231731A publication Critical patent/JPS61231731A/ja
Publication of JPH0431182B2 publication Critical patent/JPH0431182B2/ja
Granted legal-status Critical Current

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    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、半導体装置の製造方法に関し、特にＩＣや
トランジスタなどの製造工程において、半導体チップ上
の電極とリード端子とを金属細線を用いて接続するワイ
ヤボンディング方法に関するものである。
〔従来の技術〕
従来この種の半導体装置においては、ワイヤ材として金
が用いられ、またリード表面には銀めっき等の表面処理
が施されていた。第４図は従来の方式で構成された半導
体装置の外観模式図を示す。
図において、１は金属ワイヤ、２は半導体チップ、３は
半導体チップ２の表面に形成されたアルミニウム電極、
４は銅合金リード、５はリード４の表面に形成された銀
めっき層であり、上記ワイヤ１は主に超音波併用熱圧着
方式により電極３及びリード４に接合されている。
〔発明が解決しようとする問題点〕
ここで材料原価低減及び素子の長期信頼性向上という観
点から、ワイヤ１材を金から銅に代えるとともに、リー
ド材表面の銀めっき層５を省略し、リード４上に直接銅
ワイヤ１を接合することが考えられる。
また超音波併用熱圧着ボンディングにおいて、良好な接
合状態を得るためには、材料表面の酸化膜等の吸着物を
十分に破壊、除去すること、及び接合界面における材料
の塑性変形により、酸化膜破壊後の新生面同士の接触面
積を拡大することが極めて重要である。
しかるに銀めっき層５を省略し、銅合金リード４に直接
ボンディングを行なう場合、上記の２点、即ち酸化被膜
の除去及び接合界面での塑性変形の双方において、従来
の銀めっきリードに比べ、良好な結果を得ることが著し
く困難となる。そのためリード４へのボンディング時に
接合不良、即ち接合強度の不足、極端な場合はボンディ
ング時のはがれなどが発生する。
このような問題点を解決する方法としては、上述のボン
ディング工程において、超音波の出力、即ち振動振幅を
従来の金の場合に比べて大きく設定することが考えられ
るが、この方法では、十分な接合強度を得ようとすれば
、ボンディング中に銅線が変形しすぎ、銅線自体の強度
が低下してしまうおそれがある。
この発明は上記のような問題点を解消するためになされ
たもので、金泥細線とリードとの良好な接合性を確保で
きる半導体装置の製造方法を提供することを目的として
いる。
〔問題点を解決するための手段〕
この発明に係る半導体装置の製造方法は、金属細線とリ
ードとのボンディング工程中に、リードのボンディング
エリアをその裏面側からの超音波印加により局所的に軟
化させるようにしたものである。
（作用〕 この発明においては、リードのボンディングエリアを局
所的に軟化させたことから、リードの十分な機械的強度
を維持しつつ、リードのボンディングエリアの塑性変形
能が向上し、金１１Ｋ［［Ｉ線とリードとは大きな面積
でもって接触した状態で接合されるものである。
〔実施例〕
以下、本発明の実施例を図について説明する。
第１図及び第２図は本発明の一実施例による半導体装置
の製造方法を模式的に示したものである。
図において、６はボンディングツールであるキャピラリ
チップ、７は超音波振動装置、８は振動子である。
本実施例の方法では、従来の方法と同様に、半導体チッ
プ２の電極３と銅合金リード４のボンディングエリアと
を、例えば超音波併用熱圧着方式でもって銅線１により
結線するが、そのボンディング工程中に銅合金リード４
のボンディングエリアにその裏面側より該裏面と平行な
方向の超音波振動を印加する。
銅合金リード４は、その機械的強度を確保するための金
属元素が添加されていることに加え、加工硬化履歴を受
けており、銅線１に比べて相対的に硬さが高く、そのま
までは接合時に塑性変形しにくい。そこで銅合金リード
４のボンディングエリアにその裏面側より超音波を印加
するごとにより、リード４としては十分な機械的強度を
保ちながら、ボンディングエリアのみを局部軟化させる
ものである。
また第２図は、実験により得られたリードの硬さと接合
強度の関係を示すが、リード硬さをビッカース硬さでＨ
Ｖ５０〜１００にすることによって大幅に接合性が向上
することが分る。なお図中、ａは合格強度、即ち必要な
接合強度を示す。
以上のような本実施例の方法では、リートボンディング
エリアの硬さを局部的に低下させるようにしたので、銀
めっきを省略した銅合金リードへの銅線の接合性を大幅
に向上でき、金、銀等の貴金属材料の大幅な使用量の削
減を達成できる。
また第３図は本発明の他の実施例を模式的に示したもの
で、本実施例では銅合金リート４のボンディングエリア
にその裏面側から該裏面に垂直な方向の超音波振動を印
加するようにしている。
なお上記実施例では銅合金リードへの適用例を示したが
、鉄系リード等への適用に列しても同様の効果が得られ
る。また金属細線は銅線ではな（、銅合金の細線であっ
てもよい。
〔発明の効果〕
以上のように、本発明に係る半導体装置の製造方法によ
れば、金泥細線とリードとのボンディング工程中に、リ
ードのボンディングエリアを裏面側からの超音波印加に
より局所的に軟化させるようにしたので、リードと金属
細線との良好な接合性を確保でき、貴金属材料の使用量
を大幅に削減することが可能となる効果がある。
【図面の簡単な説明】
第１図は本発明の一実施例による半導体装置の製造方法
を示す模式図、第２図はリード硬さと接合強度との関係
を示す図、第３図は本発明の他の実施例を示す模式図、
第４図は従来の方法を説明するための模式図である。 ｌ・・・銅線、２・・・半導体チップ、３・・・電極、
４・・・銅合金リード。 なお図中同一符号は同−又は相当部分を示す。 第１図 第２図 髪ぎ（Ｈｖ）　　− 第３図 第４図

Claims (4)

    【特許請求の範囲】
  1. （１）半導体チップ上の電極とリードとを金属細線を用
    いて結線する半導体装置の製造方法において、ワイヤボ
    ンディングの工程中に、リードのボンディングエリアを
    その裏面側からの超音波印加によって局所的に軟化させ
    ることを特徴とする半導体装置の製造方法。
  2. （２）上記リードとして、銅合金又は鉄合金のものを用
    いることを特徴とする特許請求の範囲第１項記載の半導
    体装置の製造方法。
  3. （３）上記金属細線として、銅又は銅合金のものを用い
    ることを特徴とする特許請求の範囲第１項記載の半導体
    装置の製造方法。
  4. （４）上記リードのボンディングエリアの硬さを局所的
    にマイクロビッカース硬さ換算で５０〜１００の範囲に
    調質することを特徴とする特許請求の範囲第１項記載の
    半導体装置の製造方法。
JP60073030A 1985-04-05 1985-04-05 半導体装置の製造方法 Granted JPS61231731A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60073030A JPS61231731A (ja) 1985-04-05 1985-04-05 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60073030A JPS61231731A (ja) 1985-04-05 1985-04-05 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61231731A true JPS61231731A (ja) 1986-10-16
JPH0431182B2 JPH0431182B2 (ja) 1992-05-25

Family

ID=13506540

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60073030A Granted JPS61231731A (ja) 1985-04-05 1985-04-05 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61231731A (ja)

Also Published As

Publication number Publication date
JPH0431182B2 (ja) 1992-05-25

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