JPS61140142A - ボンデイング方法 - Google Patents

ボンデイング方法

Info

Publication number
JPS61140142A
JPS61140142A JP59262008A JP26200884A JPS61140142A JP S61140142 A JPS61140142 A JP S61140142A JP 59262008 A JP59262008 A JP 59262008A JP 26200884 A JP26200884 A JP 26200884A JP S61140142 A JPS61140142 A JP S61140142A
Authority
JP
Japan
Prior art keywords
bonding
stitch
outer leads
external lead
capillary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59262008A
Other languages
English (en)
Inventor
Terumune Takei
武井　輝統
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP59262008A priority Critical patent/JPS61140142A/ja
Publication of JPS61140142A publication Critical patent/JPS61140142A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
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    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8593—Reshaping, e.g. for severing the wire, modifying the wedge or ball or the loop shape
    • H01L2224/85947—Reshaping, e.g. for severing the wire, modifying the wedge or ball or the loop shape by mechanical means, e.g. "pull-and-cut", pressing, stamping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/85951—Forming additional members, e.g. for reinforcing
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体素子の電極と外部リードとを連結用金属
細線で接続するボンディング方法に関するものである。
〔従来の技前〕
従来、半導体素子と外部リードを金属細線で連結する場
合キャピラリの穴から金属細線（たとえば金線）を送り
出し、これを水素炎等で焼き切ってできた溶融玉をキャ
ピラリーで押し付は素子の電極部へ接着させ、その後そ
のままキャピラリーから金線をくむ出しながら外部リー
ドにステッチボンドするいわゆるネイルヘッドボンディ
ング方式がある。
〔発明が解決しようとする問題点〕
上述した従来のネイルヘッドボンディング方式は、素子
側は金線の溶融玉をキャビ２すで押しつぶすため接着面
積は広く、接着強度は強いが、ステッチボンドされた外
部リード側での接着はキャピラリの端で金線を圧着させ
るだけなので、金線と外部リードとの接着面積は狭く接
着強度本弱い。
このため、樹脂封止された半導体装置の場合、その実装
時の半田付時の温度による樹脂歪により接着部のハガレ
が生じるという欠点がある。
本発明の目的は外部リード側の接着において接着強度が
強いボンディング方法を提供するものである。
〔問題点を解決するための手段〕
本発明は、半導体素子と外部リードとを金属細線で連結
するワイヤーボンディングの外部リード側での接着にお
いて、ネイルヘッドボンディング方式のキャピラリーに
よるステッチボンドがなされた後にさらにウェッジによ
りステッチボンドでの接着面積より広くなるように金属
細線を外部リードへ圧着する方法である。
〔作用〕
本発明によれば、ステッチボンド部及びそれに続く金属
細線の一部をウェッジで外部リードへ圧着しているため
、ステッチボンドだけに比較し、接着面積は広く、接着
強度も強くなり、従来のように実装後に接着部にハガレ
が生じるという欠点を防ぐことが出来る。
〔実施例〕
次に、本発明を、トランジスタを例に、図面を参照して
説明する。
第１図はネイルヘッドボンディング工程の図面である。
１は素子、２は連結用金線、３はエミッタ用外部リード
、４はコレクター用外部リード、５はペース用外部リー
ド、６はキャピラリーである。エミッタ用外部リード３
及びペース用外部リード５と連結用金線２との圧着面積
はキャビ２す６の端で圧着された所だけで狭い。第２図
はステッチボンドさｎた後にさらにウェッジにより外部
リード側へ圧着する工程を示している。７はウェッジで
ある。ネイルヘッドボンディングが完了したものは、ボ
ンダーの別のステージにおいてウェッジ７によりステッ
チボンド部及びそれに続く連結用金線２の一部をエミッ
タ用外部リード及びペース用外部リード５へ圧着する。
従って、連結用金ワイヤ−２とエミッタ用外部リード３
及びペース用外部リード４との接着面積はステッチボン
ドだけの場合に比較し広くなり、接着強度も強くなった
。
〔発明の効果〕
以上、説明したように、本発明は、半導体装置の素子と
外部リードを連結するワイヤーボンディングにおいて、
その外部リード側での接着がキャピラリーによるステッ
チボンド後にさらにウェッジによる圧着で金属細線と外
部リードとの接着面積をステッチボンドより広く出来、
そのため接着強度が強くできる効果がある。
なお、実施例では連結用金属細線に金線を使用したがキ
ャピラリーによるステッチボンド可能な金属細線ならこ
ｎに限らない。又半導体装置としてトランジスタに適用
したがこれに限らないことは明白である。
【図面の簡単な説明】
第１図はネイルヘッドボンディング工程を示す断面図、
第２図はウェッジによる圧着工程を示す断面図である。 １・・・・・・素子、２・・・・・・連結用金線、３・
・・・・・エミッタ用外部リード、４・・・・・・コレ
クタ用外部リード、５・・・・・・ペース用外部リード
、６・・・・・・キャピラリ、７・・・・・−ウェッジ
。

Claims (1)

    【特許請求の範囲】
  1. 　半導体素子の電極と外部リードとを連結するワイヤー
    ボンディングにおいて、金属細線をキャピラリーにより
    ステッチボンドした後にさらにウェッジにより前記ステ
    ッチボンドされた部分に圧力を加えることを特徴とする
    ボンディング方法。
JP59262008A 1984-12-12 1984-12-12 ボンデイング方法 Pending JPS61140142A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59262008A JPS61140142A (ja) 1984-12-12 1984-12-12 ボンデイング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59262008A JPS61140142A (ja) 1984-12-12 1984-12-12 ボンデイング方法

Publications (1)

Publication Number Publication Date
JPS61140142A true JPS61140142A (ja) 1986-06-27

Family

ID=17369730

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59262008A Pending JPS61140142A (ja) 1984-12-12 1984-12-12 ボンデイング方法

Country Status (1)

Country Link
JP (1) JPS61140142A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010141066A (ja) * 2008-12-11 2010-06-24 Rohm Co Ltd 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010141066A (ja) * 2008-12-11 2010-06-24 Rohm Co Ltd 半導体装置

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